KR100945759B1 - 기판 처리 방법, 기판 처리 장치 및 기록 매체 - Google Patents

기판 처리 방법, 기판 처리 장치 및 기록 매체 Download PDF

Info

Publication number
KR100945759B1
KR100945759B1 KR1020087001371A KR20087001371A KR100945759B1 KR 100945759 B1 KR100945759 B1 KR 100945759B1 KR 1020087001371 A KR1020087001371 A KR 1020087001371A KR 20087001371 A KR20087001371 A KR 20087001371A KR 100945759 B1 KR100945759 B1 KR 100945759B1
Authority
KR
South Korea
Prior art keywords
processing
nozzle
substrate
processing nozzle
arm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020087001371A
Other languages
English (en)
Korean (ko)
Other versions
KR20080020693A (ko
Inventor
가즈히사 마츠모토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20080020693A publication Critical patent/KR20080020693A/ko
Application granted granted Critical
Publication of KR100945759B1 publication Critical patent/KR100945759B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020087001371A 2006-05-15 2007-04-12 기판 처리 방법, 기판 처리 장치 및 기록 매체 Active KR100945759B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00135489 2006-05-15
JP2006135489 2006-05-15

Publications (2)

Publication Number Publication Date
KR20080020693A KR20080020693A (ko) 2008-03-05
KR100945759B1 true KR100945759B1 (ko) 2010-03-08

Family

ID=38693710

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087001371A Active KR100945759B1 (ko) 2006-05-15 2007-04-12 기판 처리 방법, 기판 처리 장치 및 기록 매체

Country Status (5)

Country Link
US (1) US8439051B2 (enExample)
JP (1) JP4521056B2 (enExample)
KR (1) KR100945759B1 (enExample)
TW (1) TW200814173A (enExample)
WO (1) WO2007132609A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5036664B2 (ja) * 2008-09-04 2012-09-26 東京エレクトロン株式会社 液処理におけるノズル洗浄、処理液乾燥防止方法及びその装置
JP4694637B2 (ja) * 2009-06-09 2011-06-08 シャープ株式会社 気相成長装置
JP5220839B2 (ja) * 2010-12-28 2013-06-26 東京エレクトロン株式会社 液処理装置および液処理方法
JP5694118B2 (ja) * 2011-01-18 2015-04-01 東京エレクトロン株式会社 液処理装置および液処理方法
JP5734705B2 (ja) * 2011-03-02 2015-06-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5518793B2 (ja) 2011-06-15 2014-06-11 東京エレクトロン株式会社 液処理装置および液処理方法
US9378988B2 (en) 2011-07-20 2016-06-28 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method using processing solution
JP6014313B2 (ja) * 2011-07-20 2016-10-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP5667545B2 (ja) * 2011-10-24 2015-02-12 東京エレクトロン株式会社 液処理装置および液処理方法
JP6319941B2 (ja) 2013-03-15 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および吐出ヘッド待機方法
JP6281161B2 (ja) * 2013-09-27 2018-02-21 東京エレクトロン株式会社 液処理装置
JP2015092539A (ja) * 2013-09-30 2015-05-14 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR101621482B1 (ko) * 2014-09-30 2016-05-17 세메스 주식회사 기판 처리 장치 및 방법
TWI622091B (zh) * 2015-06-18 2018-04-21 思可林集團股份有限公司 基板處理裝置
JP6473409B2 (ja) * 2015-11-10 2019-02-20 株式会社Ｓｃｒｅｅｎホールディングス ノズル待機装置および基板処理装置
JP6789038B2 (ja) * 2016-08-29 2020-11-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN109923659B (zh) 2016-11-09 2024-03-12 东京毅力科创Fsi公司 用于在处理室中处理微电子衬底的磁悬浮且旋转的卡盘
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
WO2018140789A1 (en) 2017-01-27 2018-08-02 Tel Fsi, Inc. Systems and methods for rotating and translating a substrate in a process chamber
JP6914050B2 (ja) * 2017-02-15 2021-08-04 東京エレクトロン株式会社 基板処理装置
US10864533B2 (en) 2017-06-27 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit, system for and method of forming an integrated circuit
CN111937128A (zh) 2018-02-19 2020-11-13 东京毅力科创美国制造与工程公司 具有可控射束大小的处理喷雾的微电子处理系统
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
JP7185552B2 (ja) * 2019-02-13 2022-12-07 株式会社ディスコ スピンナ洗浄装置
CN114401801B (zh) * 2019-09-25 2023-10-27 东京毅力科创株式会社 处理液喷嘴和清洗装置
TWI821679B (zh) * 2020-08-25 2023-11-11 南韓商杰宜斯科技有限公司 基板處理裝置及基板處理方法
WO2022085414A1 (ja) * 2020-10-23 2022-04-28 株式会社Sumco 枚葉式ウェーハ洗浄装置の配管の洗浄方法
KR102635382B1 (ko) * 2020-12-31 2024-02-14 세메스 주식회사 기판 처리 장치 및 방법
KR20230025233A (ko) * 2021-08-13 2023-02-21 주식회사 제우스 기판처리방법
JP2024035712A (ja) * 2022-09-02 2024-03-14 株式会社Ｓｃｒｅｅｎホールディングス 二流体吐出装置、基板処理装置および二流体ノズル制御方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010067381A (ko) * 1999-12-16 2001-07-12 히가시 데쓰로 막 형성 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0723559B2 (ja) * 1989-06-12 1995-03-15 ダイセル化学工業株式会社 スタンパー洗浄装置
US5718763A (en) * 1994-04-04 1998-02-17 Tokyo Electron Limited Resist processing apparatus for a rectangular substrate
JP3673329B2 (ja) * 1996-07-05 2005-07-20 大日本スクリーン製造株式会社 基板処理装置および洗浄方法
US6050275A (en) * 1996-09-27 2000-04-18 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
JP3679904B2 (ja) * 1997-08-29 2005-08-03 大日本スクリーン製造株式会社 ノズル洗浄装置および該ノズル洗浄装置を備えた塗布装置
JP3381776B2 (ja) * 1998-05-19 2003-03-04 東京エレクトロン株式会社 処理装置および処理方法
KR100585448B1 (ko) * 1999-04-08 2006-06-02 동경 엘렉트론 주식회사 막 형성방법 및 막 형성장치
JP4334758B2 (ja) * 1999-12-17 2009-09-30 東京エレクトロン株式会社 膜形成装置
US6589359B2 (en) * 2000-07-11 2003-07-08 Tokyo Electron Limited Cleaning method and cleaning apparatus for substrate
US6951221B2 (en) * 2000-09-22 2005-10-04 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
KR100877044B1 (ko) * 2000-10-02 2008-12-31 도쿄엘렉트론가부시키가이샤 세정처리장치
JP2003168670A (ja) 2001-11-30 2003-06-13 Sony Corp ウェハの洗浄方法
JP2004273799A (ja) * 2003-03-10 2004-09-30 Dainippon Screen Mfg Co Ltd 基板用リンス液、基板処理方法および基板処理装置
KR100926308B1 (ko) * 2003-04-23 2009-11-12 삼성전자주식회사 세정 유닛, 이를 갖는 코팅 장치 및 방법
US7267723B2 (en) * 2003-05-13 2007-09-11 Dainippon Screen Mfg. Co., Ltd. Treating solution supply nozzle, a substrate treating apparatus having this nozzle, and a method of manufacturing a treating solution supply nozzle

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010067381A (ko) * 1999-12-16 2001-07-12 히가시 데쓰로 막 형성 장치

Also Published As

Publication number Publication date
TW200814173A (en) 2008-03-16
JPWO2007132609A1 (ja) 2009-09-24
KR20080020693A (ko) 2008-03-05
JP4521056B2 (ja) 2010-08-11
US8439051B2 (en) 2013-05-14
WO2007132609A1 (ja) 2007-11-22
TWI362069B (enExample) 2012-04-11
US20090114253A1 (en) 2009-05-07

Similar Documents

Publication Publication Date Title
KR100945759B1 (ko) 기판 처리 방법, 기판 처리 장치 및 기록 매체
KR101891128B1 (ko) 기판 처리 장치 및 토출 기구 세정 방법
KR101562139B1 (ko) 기판처리장치 및 기판처리방법
KR102267992B1 (ko) 액 처리 장치
JP5923300B2 (ja) 基板処理装置および基板処理方法
JP2003209087A (ja) 基板処理装置
JP7446144B2 (ja) 基板洗浄装置および基板洗浄方法
JP2023037400A (ja) 加工装置
KR20120103465A (ko) 2 유체 노즐, 기판 액처리 장치, 기판 액처리 방법 및 기판 액처리 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체
CN101373706B (zh) 基板清洗装置及基板清洗方法
JP2014027245A (ja) 基板処理装置及び基板処理方法
JP2000147787A (ja) 現像方法及び現像装置
JPH07115060A (ja) 処理装置及び処理方法
KR100839912B1 (ko) 기판 처리 장치 및 방법
JP3573445B2 (ja) 現像装置及び洗浄装置
JP5538971B2 (ja) 洗浄装置
TWI725003B (zh) 基板洗淨裝置
JP2018129476A (ja) 基板処理装置
TWI741473B (zh) 基板洗淨裝置及基板處理方法
KR20230099428A (ko) 유체 토출 노즐 세정 장치 및 유체 토출 노즐 세정 방법
WO2007074607A1 (ja) 基板処理装置および基板処理方法
JP7732799B2 (ja) カバーの洗浄方法
JP2004247752A (ja) クローズドマニュファクチャリング装置およびこの装置を用いて被洗浄基板を処理する方法
JP2024127348A (ja) 洗浄装置
JP2005167261A (ja) 基板処理装置および洗浄方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20080117

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20090318

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20090904

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20091127

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20100226

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20100302

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20130201

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20130201

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20140204

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20140204

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20150130

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20150130

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20160127

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20160127

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20170202

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20170202

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20180219

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20180219

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20190218

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20190218

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20200218

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20200218

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20230131

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20240119

Start annual number: 15

End annual number: 15

PR1001 Payment of annual fee

Payment date: 20250108

Start annual number: 16

End annual number: 16