JP5832397B2 - 基板処理装置及び基板処理方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims description 270
- 238000003672 processing method Methods 0.000 title claims description 14
- 239000007788 liquid Substances 0.000 claims description 202
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 136
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 92
- 239000012530 fluid Substances 0.000 claims description 72
- 239000011259 mixed solution Substances 0.000 claims description 69
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 59
- 239000000203 mixture Substances 0.000 claims description 54
- 239000011261 inert gas Substances 0.000 claims description 34
- 238000002156 mixing Methods 0.000 claims description 14
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 description 28
- 239000007789 gas Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000009423 ventilation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000003595 mist Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
3 基板
12 基板保持手段
13 混合液供給手段
14 OH基供給手段
16 基板処理室
Claims (18)
- 下地層の表面に除去対象層を形成した基板に硫酸と過酸化水素水との混合液を供給して除去対象層を除去する基板処理装置において、
前記基板を処理するための基板処理室と、
前記基板処理室に設けられた、前記基板を保持するための基板保持手段と、
前記基板保持手段で保持された基板に硫酸と過酸化水素水との混合液を前記下地層にダメージを与えない温度及び過酸化水素水の混合比で供給する混合液供給手段と、
前記基板にOH基を含む流体を供給するOH基供給手段と、
を有し、
前記OH基供給手段は、前記混合液とOH基が前記基板上で混合された際に前記下地層にダメージを与えない量のOH基を含む流体を供給することを特徴とする基板処理装置。 - 前記OH基供給手段は、前記混合液供給手段から混合液が供給される部分に局部的に前記OH基を供給するように構成したことを特徴とする請求項1に記載の基板処理装置。
- 前記OH基供給手段は、前記基板に対して相対的に移動する前記混合液供給手段の進行方向に対して上流側に設けたことを特徴とする請求項2に記載の基板処理装置。
- 前記OH基供給手段は、前記基板処理室の内部に全体的に前記OH基を供給するように構成したことを特徴とする請求項1に記載の基板処理装置。
- 前記OH基供給手段は、前記OH基を供給する間に、供給するOH基の量を減らすことを特徴とする請求項1〜請求項4のいずれかに記載の基板処理装置。
- 前記OH基供給手段は、前記OH基を供給する間に、供給するOH基の温度を下げることを特徴とする請求項1〜請求項5のいずれかに記載の基板処理装置。
- 前記混合液供給手段は、前記混合液を供給する間に、供給する混合液に含まれる過酸化水素水の混合比を下げることを特徴とする請求項1〜請求項6のいずれかに記載の基板処理装置。
- 前記混合液供給手段は、前記混合液を供給する間に、供給する混合液の温度を下げることを特徴とする請求項1〜請求項7のいずれかに記載の基板処理装置。
- 前記混合液供給手段は、前記混合液を不活性ガスによって液滴化する2流体ノズルを有することを特徴とする請求項1〜請求項8のいずれかに記載の基板処理装置。
- 下地層の表面に除去対象層を形成した基板に硫酸と過酸化水素水との混合液を供給して除去対象層を除去する基板処理方法において、
前記基板に硫酸と過酸化水素水との混合液を前記下地層にダメージを与えない温度及び過酸化水素水の混合比で供給するとともに、前記基板にOH基を含む流体を、前記混合液とOH基が前記基板上で混合された際に前記下地層にダメージを与えない量で供給して、前記除去対象層を除去することを特徴とする基板処理方法。 - 前記OH基を前記混合液が供給される部分に局部的に供給することを特徴とする請求項10に記載の基板処理方法。
- 前記混合液が供給される部分を前記基板に対して相対的に移動させるとともに、移動する前記混合液が供給される部分の進行方向に対して上流側に前記OH基を供給することを特徴とする請求項11に記載の基板処理方法。
- 前記OH基を基板処理室の内部に全体的に供給することを特徴とする請求項10に記載の基板処理方法。
- 前記OH基を供給する間に、供給するOH基の量を減らすことを特徴とする請求項10〜請求項13のいずれかに記載の基板処理方法。
- 前記OH基を供給する間に、供給するOH基の温度を下げることを特徴とする請求項10〜請求項14のいずれかに記載の基板処理方法。
- 前記混合液を供給する間に、供給する混合液に含まれる過酸化水素水の混合比を下げることを特徴とする請求項10〜請求項15のいずれかに記載の基板処理方法。
- 前記混合液を供給する間に、供給する混合液の温度を下げることを特徴とする請求項10〜請求項16のいずれかに記載の基板処理方法。
- 前記混合液を不活性ガスによって液滴化して供給することを特徴とする請求項10〜請求項17のいずれかに記載の基板処理方法。
Priority Applications (5)
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JP2012196610A JP5832397B2 (ja) | 2012-06-22 | 2012-09-06 | 基板処理装置及び基板処理方法 |
CN201310230866.7A CN103515220B (zh) | 2012-06-22 | 2013-06-09 | 基板处理装置和基板处理方法 |
US13/916,826 US9378940B2 (en) | 2012-06-22 | 2013-06-13 | Substrate processing apparatus and substrate processing method |
TW102121122A TWI591686B (zh) | 2012-06-22 | 2013-06-14 | Substrate processing method |
KR1020130070236A KR101828103B1 (ko) | 2012-06-22 | 2013-06-19 | 기판 처리 장치, 기판 처리 방법 및 비일시적인 컴퓨터 판독가능한 기억 매체 |
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JP2012196610A JP5832397B2 (ja) | 2012-06-22 | 2012-09-06 | 基板処理装置及び基板処理方法 |
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JP5832397B2 true JP5832397B2 (ja) | 2015-12-16 |
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US (1) | US9378940B2 (ja) |
JP (1) | JP5832397B2 (ja) |
KR (1) | KR101828103B1 (ja) |
CN (1) | CN103515220B (ja) |
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KR20110001273A (ko) | 2009-06-30 | 2011-01-06 | 세메스 주식회사 | 기판 처리 방법 및 장치 |
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JP5460633B2 (ja) * | 2010-05-17 | 2014-04-02 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録した記録媒体 |
JP5668914B2 (ja) * | 2010-08-27 | 2015-02-12 | 栗田工業株式会社 | 洗浄方法および洗浄システム |
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