Classifications

• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
  • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
  • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
  • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
  • F21V29/50—Cooling arrangements
  • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
  • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
  • F21V29/50—Cooling arrangements
  • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
  • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
  • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
  • F21V29/50—Cooling arrangements
  • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
  • F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
  • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
  • F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
  • F21Y2115/00—Light-generating elements of semiconductor light sources
  • F21Y2115/10—Light-emitting diodes [LED]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01078—Platinum [Pt]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01087—Francium [Fr]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/64—Heat extraction or cooling elements
  • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

• the present invention relates to a semiconductor light emitting module, a device, and a manufacturing method thereof, and more particularly to a semiconductor light emitting module, a device, and a manufacturing method thereof that enable high-intensity light emission with high power.
• LEDs light emitting diodes
• various devices using the semiconductor light emitting devices have been developed. Yes.
• the use of large currents has attracted attention for use in lighting instead of conventional fluorescent lamps and incandescent lamps, and a technique for solving the problem of heat generation caused by large currents has been proposed.
• the present invention has been made in view of such a problem. By efficiently dissipating the heat generated in the light emitting element and suppressing the temperature rise, the luminance characteristic is deteriorated even when a large current is passed.
• An object of the present invention is to provide a semiconductor light-emitting module, a device, and a method for manufacturing the same that can prevent this and obtain high luminance.
• Patent Document 1 Japanese Patent Application Laid-Open No. 2002-223007
• Patent Document 2 JP 2002-93206 A
• Patent Document 3 Japanese Patent Laid-Open No. 10-242513
• the semiconductor light emitting module according to claim 1 is configured such that the semiconductor light emitting element and each of the semiconductor light emitting elements are arranged in contact with the surface, and power is supplied to each semiconductor light emitting element.
• a heat dissipating block that is one of the electrodes for supplying heat, an insulating film covering any part of the surface of the heat dissipating block except for each semiconductor light emitting element and its vicinity, and an arbitrary surface of the insulating film.
• a power distribution film electrically connected to each semiconductor light emitting element and serving as the other electrode of the electrode for supplying power.
• the invention according to claim 2 is the semiconductor light emitting module according to claim 1, wherein each of the vicinity of the semiconductor light emitting elements reflects and collects light emitted from each of the semiconductor light emitting elements. It has the shape of a reflecting plate.
• the invention described in claim 3 is the semiconductor light emitting module according to claim 1 or 2, characterized in that the heat dissipation block has a slit structure that does not hinder convection of air that promotes heat dissipation. To do.
• the invention according to claim 4 is the semiconductor light emitting module according to any one of claims 1 to 3, wherein the heat dissipation block generates an air flow that promotes heat dissipation from the heat dissipation block.
• the invention according to claim 5 is the semiconductor light emitting module according to any one of claims 1 to 4, wherein the insulating film and the power distribution film have holes for generating an air flow that promotes heat dissipation from the heat dissipation block. It is characterized by having.
• the invention according to claim 6 is the semiconductor light emitting module according to any one of claims 1 to 5, wherein the heat radiation block is one of the electrodes for supplying power to the semiconductor light emitting element, and the power is supplied.
• One or more sets of terminals for power supply are provided at an arbitrary position of the distribution film to be the other electrode of the electrode, both or one of the electrodes.
• the semiconductor light-emitting device includes a semiconductor light-emitting element and a heat-dissipating block in which each of the semiconductor light-emitting elements is disposed in contact with the surface and serves as one of electrodes for supplying power to each semiconductor light-emitting element And an insulating film that covers any part of the surface of the heat dissipation block except for each semiconductor light emitting element and its vicinity, and is disposed in contact with any surface of the insulating film, and is electrically connected to each semiconductor light emitting element.
• a semiconductor light emitting module including a power distribution film serving as the other electrode of the electrode for supplying electric power, a power source for supplying electric power to each semiconductor light emitting element, and a support means for supporting the semiconductor light emitting module It is characterized by comprising.
• the invention according to claim 8 is the semiconductor light emitting device according to claim 7, further comprising an illumination hood having a heat radiating portion and connected to the heat radiating block.
• the method of manufacturing a semiconductor light emitting module includes the steps of disposing each of the semiconductor light emitting elements so as to be in contact with a surface of the heat dissipation block serving as one of electrodes supplying power to each semiconductor light emitting element, A step of covering the surface of the heat dissipation block by the film with the exception of each semiconductor light emitting element and its vicinity, and another electrode electrically connected to each semiconductor light emitting element to supply the power; And a step of arranging a distribution film in contact with an arbitrary surface of the insulating film.
• the invention described in claim 10 is the method for manufacturing a semiconductor light emitting module according to claim 9, further comprising a step of manufacturing a heat dissipation block by pressing a sheet metal into a corrugated shape. It is characterized by that.
• the invention according to claim 11 is related to the method for manufacturing a semiconductor light emitting module according to claim 9.
• the method further comprises the step of processing and molding the heat dissipation block with an extruded die material by extruding the semiconductor light emitting element in the normal direction of the surface on which the semiconductor light emitting element is disposed.
• the semiconductor light emitting module manufacturing method according to claim 9, wherein the invention of claim 12 further includes a step of manufacturing a heat dissipation block by cutting and raising a part of the sheet metal.
• the invention according to claim 13 is a semiconductor light emitting module, comprising: a semiconductor light emitting element; and a high reflection plate formed to reflect light from the semiconductor light emitting element by vapor-depositing an increased reflection film.
• a high-reflection plate in which each of the semiconductor light-emitting elements is disposed in contact with the surface, an insulating film covering any part of the surface of the high-reflection plate except for each semiconductor light-emitting element and its vicinity, and any insulating film BRIEF DESCRIPTION OF THE DRAWINGS
• FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.
• FIG. 1 is a front view showing a structure of a semiconductor light emitting module according to an embodiment of the present invention.
• FIG. 2 is a front view showing a structure of a semiconductor light emitting module according to an embodiment of the present invention.
• FIG. 3A is a view for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by extrusion molding of this embodiment.
• FIG. 3B is a view for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by extrusion molding of this embodiment.
• FIG. 3C is a view for explaining a method of manufacturing a semiconductor light-emitting module using a heat dissipation block created by extrusion molding of this embodiment.
• FIG. 4A is a diagram for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block formed by bending or extruding a sheet metal of this embodiment.
• FIG. 4B is a view for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block formed by bending or extruding a sheet metal of this embodiment.
• Fig. 4C shows heat dissipation created by bending or extruding the sheet metal of this embodiment. It is a figure for demonstrating the method to manufacture a semiconductor light-emitting module using a block.
• FIG. 5A is a view for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block prepared by extrusion molding of this embodiment.
• FIG. 5B is a diagram for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by extrusion molding according to the present embodiment.
• FIG. 5C is a view for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by extrusion molding of this embodiment.
• FIG. 6 is a front view showing the structure of the semiconductor light emitting module according to one embodiment of the present invention.
• FIG. 7 is a front view showing a structure of a semiconductor light emitting module according to an embodiment of the present invention.
• FIG. 8A is a conceptual diagram showing a semiconductor light emitting module manufactured according to another embodiment of the present invention.
• FIG. 8B is a conceptual diagram showing a semiconductor light emitting module manufactured according to another embodiment of the present invention.
• FIG. 8C is a conceptual diagram showing a semiconductor light emitting module manufactured according to another embodiment of the present invention.
• FIG. 8D is a conceptual diagram showing a semiconductor light emitting module manufactured according to another embodiment of the present invention.
• FIG. 9 is a schematic view showing a lighting device incorporating the semiconductor light emitting module of this embodiment.
• Fig. 10 is a diagram showing the heat radiation when a conventional semiconductor light emitting module is used.
• FIG. 11 is a view showing the heat radiation of the semiconductor light emitting module when one embodiment of the present invention is used.
• FIG. 14 is a diagram showing thermal characteristics when the semiconductor light emitting element of the first embodiment is caused to emit light as ceiling illumination.
• FIG. 15 is a diagram showing thermal characteristics when the semiconductor light emitting device of the first embodiment is caused to emit light as wall illumination.
• FIG. 16A is a diagram for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by cutting and raising a part of a sheet metal of this embodiment.
• FIG. 16B is a view for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by cutting and raising a part of the sheet metal of this embodiment.
• FIG. 16C is a view for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by cutting and raising a part of the sheet metal of this embodiment.
• FIG. 16D is a view for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by cutting and raising a part of the sheet metal of this embodiment.
• FIG. 17A is a diagram showing examples of heat radiating fins facing in various directions of a heat radiating block created by cutting and raising a part of the sheet metal of this embodiment.
• FIG. 17B is a diagram showing examples of heat radiation fins facing in various directions of a heat radiation block created by cutting and raising a part of the sheet metal of this embodiment.
• FIG. 17C is a diagram showing examples of heat radiation fins facing in various directions of a heat radiation block created by cutting and raising a part of the sheet metal of this embodiment.
• FIG. 17D is a diagram showing examples of heat radiation fins facing various directions of a heat radiation block created by cutting and raising a part of the sheet metal of this embodiment.
• FIG. 18 is a front view showing the structure of a semiconductor light emitting module that works on this embodiment.
• FIG. 19 is an enlarged front view and cross-sectional view of a part of the structure of the semiconductor light emitting module according to one embodiment of the present invention.
• FIG. 20 is a front view and a lateral side view showing the structure of another example of the semiconductor light emitting module that works on the present embodiment.
• FIG. 21 is a front view and a lateral side view showing the structure of still another example of the semiconductor light emitting module that works on the present embodiment.
• FIG. 22 is a front view and a lateral side view showing the structure of still another example of the semiconductor light emitting module that works on the present embodiment.
• FIG. 23 is a front view and a lateral side view showing the structure of still another example of the semiconductor light emitting module that works on the present embodiment.
• FIG. 24 is a diagram showing an example of a case of a semiconductor light emitting module according to one embodiment of the present invention.
• FIG. 25A is a diagram showing a conventional configuration in the case of explaining effects that are not provided in the conventional technology when the method of the example of the present embodiment is adopted.
• FIG. 25B is a diagram showing a configuration of the present embodiment when an effect not provided in the prior art when the method of the example of the present embodiment is adopted is described.
• FIG. 26 is a diagram showing the results of measuring the brightness using three types of reflective plate materials in order to confirm the effect of the present invention.
• FIG. 27 is a diagram for explaining that the higher the reflectance of the reflection plate of the present embodiment, the more the attenuation of the reflected light amount after repeated reflection is suppressed.
• FIG. 28 is a diagram showing a state where the reflective structure of the present embodiment is developed.
• FIG. 29A is a diagram showing the results of a test of the secular change in luminous efficiency of this embodiment.
• FIG. 29B is a diagram showing the results of a test of the secular change in luminous efficiency of this embodiment.
• FIG. 29C is a diagram showing the results of a test of the change in luminous efficiency over time of the present embodiment.
• FIG. 1 is a front view showing the structure of a semiconductor light emitting module according to an embodiment of the present invention. It is.
• the semiconductor light emitting module 101 of the present embodiment is a heat dissipation block 102 that performs heat dissipation and also serves as an electrode, an insulating film 103 that covers the heat dissipation block 102 and insulates, and is further stacked via the insulating film 103 to become the other electrode
• a power distribution film 104 is provided.
• the semiconductor light emitting element 111 that emits light when actually energized is directly electrically connected to the heat dissipation block 102, and the other terminal is connected to the power distribution film 104 via the conductive wire 112.
• the heat dissipating block 102 has a certain heat dissipating characteristic as a heat dissipating medium and has an electric characteristic as an electrode! /, So that a misaligned material can be used.
• various metals such as iron, silver, copper, or aluminum-um, and alloys thereof, carbon-based materials having higher thermal conductivity than metals, or composite materials thereof are used. It is created by processing with the method of.
• the shape may be a shape in which a heat dissipation fin protrudes as shown in FIGS. 3A to 3C, or a slit shape that does not hinder air convection that promotes heat dissipation, as shown in FIGS.
• the heat dissipation block can be processed and molded by an extruded mold material or can be created by bending a sheet metal. Any known method can be used.
• the heat dissipating block 102 has a vent hole as shown in FIGS. 3A to 3C or a corrugated shape as shown in FIGS. 4A to C so that airflow flows in order to more effectively dissipate heat.
• the insulating film 103 and the power distribution film 104 are provided with vent holes in accordance with such a structure.
• the heat dissipating block 102 itself is formed so as to have the function of the heat dissipating fin 113, but is not limited thereto, and the heat dissipating fin 113 is separately formed and united for manufacturing reasons. Can also be created. In addition, it is preferable to apply a surface texture known in this technical field to a portion where the semiconductor light emitting element 111 of the heat dissipation block 102 is connected. In addition, the material of the radiating fin 113 that is individually prepared is not necessarily required to have the above-described electrical characteristics of the electrode, and for example, a ceramic material or a plastic material can be used.
• the insulating film 103 electrically insulates at least the heat dissipation block 102 and the power distribution film 104, and As long as the hole has a hole for transmitting at least light emitted from the semiconductor light emitting element 111 to the outside, it is also possible to use a misalignment known in the art.
• a substrate such as FR4 or polyimide having a shape as shown in FIG. 3B is formed, and an insulating film 103 is formed by being sandwiched between the power distribution film 104 and the heat dissipation block 102, or an adhesive having an insulating function.
• the insulating film 103 can be formed by bonding the power distribution film 104 and the heat dissipating block 102 and forming an insulating layer for insulation.
• the power distribution film 104 is formed so as to provide an electrode having a pole different from that of the heat dissipation block 102 of the semiconductor light emitting device 111, for example, a sheet metal as shown in FIG.
• the insulating film 103 formed on or attached to the heat dissipation block 102 may be used to form a metal film.
• the power distribution film 104 is made of sheet metal, at least light emitted from the semiconductor light emitting element 111 should not be blocked! As described above, it is necessary to provide a transmission hole in the upper portion of the semiconductor light emitting device 111.
• the shape and size of the transmission hole are determined by a method known in this technical field. Further, when the distribution film 104 is provided by plating, the metal film is formed by an appropriate method in this technical field in which a transmission hole is formed while covering the insulating film 103.
• the insulating film 103 and the power distribution film 104 can be formed by using a general printed circuit board.
• the semiconductor light emitting device 111 and the power distribution film 104 are electrically connected by the conductive wire 112, and the terminal 114 provided in any part of the power distribution film 104 is connected.
• Power Supply The supplied power is supplied to one pole of the semiconductor light emitting device 111 through the conductive wire 112.
• the semiconductor light emitting element 111 and the power distribution film 104 are connected using the conductive wire 112.
• the present invention is not limited to this, and the power distribution film 104 is formed without using the conductive wire 112 and the semiconductor light emitting element 111 and Various methods of electrical connection can also be used.
• a metal film can be formed along the shape and connected to the semiconductor light emitting device 111.
• the shape and structure of the terminal 114 may be any of those known in this technical field, and may be attached to the power distribution film 104 as another part.
• the transmission hole provided in the power distribution film 104 may have any shape as long as the light emitted from the semiconductor light emitting element 111 is not obstructed.
• it can be understood with reference to the cross-sectional view shown in FIG.
• it can be made to emit light by forming it like a reflector. In such a case, the effect of facilitating the encapsulation when the resin or the like is encapsulated in the transmission hole portion in order to protect the semiconductor light emitting element 111 can be expected.
• a component having a function of the reflector is provided on the power distribution film 104. They can be created individually and combined. At that time, the conductive wire 112 can be connected to the above-described conductive wire 112 by making the component having a function of a reflector conductive.
• the semiconductor light emitting module 101 of the present embodiment has been described above with reference to FIG. 1.
• the semiconductor light emitting module 101 is covered with a case 202 as shown in FIG.
• Light emitted from the element 111 can also be emitted.
• a case 202 can be made of a material such as polycarbonate, acrylic, or glass, but is not limited thereto, and any member known in this technical field can be used. can do.
• the case 202 it is possible to prevent the above-described sealing of the resin or the like when the semiconductor is sufficiently protected.
• Each of the modules shown in Figs. 3 to 5 shows a power distribution film, insulating film, and heat dissipation block.
• the power distribution film is shown in Fig. 3A
• the insulating film is shown in Fig. 3B
• the heat dissipation block is shown in Fig. 3C.
• a front view is shown.
• FIGS. 3A to 3C are diagrams for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by extrusion molding according to the present embodiment.
• Fig. 3C shows a heat dissipating block in which air holes are drilled after extrusion, and heat dissipating fins 113 have a shape in which plates are arranged in parallel. Since the radiating fin 113 has such a shape, When the semiconductor light-emitting module is installed so that the vertical direction is 113, the air heated by heat dissipation rises along the fin grooves, and therefore convection is naturally generated by supplying lower temperature air from below. It is generated and heat dissipation is promoted.
• the semiconductor light emitting element when installed downward, such as a lighting fixture installed on the ceiling or the like, the air heated by the radiating fins 113 has a rising force. Since convection is generated such that air having a lower temperature is newly supplied, heat dissipation is also promoted.
• a substrate using a material such as FR4 or polyimide having a shape as shown in FIG. 3B is formed as an insulating film.
• holes are made in the semiconductor light emitting element 111 and the vent holes of the heat dissipation block.
• the substrate thus prepared is stacked on the above-described heat dissipation block.
• laminating it is possible to use the bonding method or laminating method known in this technical field.
• a sheet metal is pressed into a shape as shown in FIG. 3A as a power distribution film, and a predetermined hole is formed in the same manner as the insulating film described above, and a terminal connected to a power source is also formed.
• the transmission hole corresponding to the upper portion of the semiconductor light emitting element can be shaped like a concave mirror as shown in FIG. 7, thereby condensing the light and increasing the luminance.
• the semiconductor light emitting device 111 is directly placed on the heat dissipation block through the transmission hole of the distribution film thus created, one of the conductive wires 112 is coupled, and the other is connected to the periphery of the transmission hole of the distribution film. Connect to the appropriate place. In the present embodiment, it is also possible to arrange the semiconductor light emitting device first after being laminated up to the power distribution film.
• the semiconductor light emitting module thus fabricated basically fulfills the function in this state, but in order to protect the element, the portion of the transmission hole exposed to the outside as shown in FIG.
• the material 701 known in this technical field such as rosin, is encapsulated.
• silicon, epoxy, or the like can be used as the material 701 used for encapsulation.
• the power for manufacturing the semiconductor light emitting module according to Manufacturing Method Example 1 By providing a connecting portion 601 for connecting the modules as shown in FIG. 6 to this module, a plurality of semiconductor light emitting modules are provided. It is also possible to configure a connecting unit using Book In the embodiment, by connecting with an electrode terminal 604 different from the connecting portion 601 to form a connecting unit, light can be emitted when connected to a power source. In addition, the module manufactured by each example of a manufacturing method demonstrated below can also be connected and used similarly.
• FIGS. 4A to 4C are views for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block formed by bending or extruding a sheet metal of this embodiment.
• Fig. 4C shows the corrugated shape formed by bending or extruding, and the radiating fin 113 formed in this way has a shape in which plates are arranged in parallel.
• an adhesive having an insulating property is applied to a portion excluding the semiconductor light emitting element 111 on the upper surface of the heat dissipation block by a method known in this technical field as shown in FIG. 4B. Coats such materials. By doing so, an insulating film is not formed in the portion that becomes the transmission hole and the air hole of the heat dissipation block.
• Insulating layers can also be formed by performing printing having insulating characteristics as the insulating film, and this printing can be formed with an adhesive function.
• a sheet metal having a shape as shown in Fig. 4A is formed as a power distribution film by forging, pressing, cutting, or the like.
• the location and shape of the permeation holes and air holes are the same as in Production Method Example 1 described above.
• the semiconductor light emitting element 111 is mounted and the conductive layer 112 is bonded to an appropriate portion in the periphery of the transmission hole.
• FIGS. 5A to 5C are diagrams for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by extrusion molding according to the present embodiment.
• Figure 5C shows semi-conducting by extrusion
• the heat dissipation block is formed by extruding in the normal direction of the body loading surface.
• a substrate is formed by injection molding or sheet molding by a method known in this technical field as shown in FIG. 5B, and laminated on the upper surface of the heat dissipation block in the same manner as in Manufacturing Method Example 1.
• a boss is formed at an appropriate location in the insulating film, and through holes are provided at appropriate positions in the power distribution film and the heat dissipation block, so that heat force squeezing is performed for lamination. It is also possible to use it together with bonding, and it is possible to use deviations in bonding methods and lamination methods known in this technical field, such as insert molding an insulating film on the power distribution film and heat dissipation block. it can.
• a plurality of metal plates are bonded together to form a power distribution film.
• the location and shape of the transmission holes and air holes are the same as in Production Method Example 1 above.
• the semiconductor light emitting element 111 is mounted, and the conductive wire 112 is bonded to an appropriate portion around the transmission hole.
• FIGS. 16A to 16D are views for explaining a method of manufacturing a semiconductor light emitting module using a heat dissipation block created by cutting and raising a part of the sheet metal of this embodiment.
• FIG. 16C is a heat dissipation block formed by cutting and raising a part of a sheet metal.
• This cutting and raising can be formed by a press method. It can also be formed by cutting out and raising the fin portion by laser cutting or etching, and any method known in this technical field can be used.
• the angle to be cut is not limited to 90 degrees, but can be raised in the direction of the light emitting surface of the semiconductor light emitting element, for example. Further, this cutting and raising need not be performed in the initial stage of the process, and the cutting and raising may be performed in the middle process or the final process of incorporating the semiconductor light emitting element.
• the radiating fins formed by cutting and raising do not necessarily have to face in the same direction. For example, in the case of a circular product such as the circular model of FIGS. 17C to 17D, it can be formed concentrically. is there.
• the cross-sectional shape can be made into a U-shaped or L-shaped heat dissipation block so that more effect can be obtained.
• a substrate is made of a material such as polyimide having a shape as shown in FIG. 16B as an insulating film, and laminated on the upper surface of the heat dissipation block in the same manner as in Manufacturing Method Example 1.
• a power distribution film is formed by sheet metal in a shape as shown in Fig. 16A.
• the portion shown in Fig. 16D which functions as the reflector described above, creates individual reflective parts. It is formed by doing.
• the material of the reflective component can be metal, resin, etc., and can be manufactured by a method known in this technical field. In the case of this manufacturing method, the reflective component is made of metal, and is pressed into a power distribution film formed of sheet metal so that holding and conduction can be performed at the same time. Thereafter, the semiconductor light emitting element is connected using a conductive wire.
• a method known in this technical field for example, using rosin as a raw material and applying conductive plating to the surface.
• a conductive adhesive or the like can be used for fixing the power distribution film and the reflective component.
• the light emitted from the semiconductor light emitting device 111 can be collected by covering the semiconductor light emitting module 101 with the case 202.
• the case may be covered with the individual semiconductor light emitting elements 111, which need not be covered with the integrated case.
• the locations and shapes of the through holes and the air holes are the same as in Production Method Example 1 described above, and are laminated and formed in the same manner as the insulating film.
• it can be further released by cutting and raising the distribution film side. It is also possible to increase the thermal effect.
• a semiconductor with high dimensional accuracy is obtained by processing in advance using a laminate of the above-described sheet metal, insulating film, and sheet metal. It is also possible to create a light emitting module.
• examples of manufacturing methods for V and misalignment can also be applied by electrodeposition coating at appropriate locations in the conductive part excluding the connection of the semiconductor light emitting element and the power supply part. It is preferred to form the insulating film by any of the methods known in the art and others, and in some cases, it will be selected depending on the intended use of the product and the packaging method. In this case, it is preferable to use materials with high thermal conductivity and emissivity for the insulating film.
• FIGS. 8A to 8D are conceptual diagrams showing a semiconductor light emitting module manufactured according to another embodiment of the present invention.
• a semiconductor light emitting device 111 is mounted on the upper surface of a hollow cylindrical heat dissipation block, and a semiconductor light emitting module is manufactured in the same manner as in the above manufacturing methods.
• the semiconductor light emitting element is stacked on the donut-shaped portion at the top of the cylinder. However, if the cylinder is thick, it can be stacked without forming such a donut part. it can.
• the structures and manufacturing methods of the semiconductor light emitting modules of various shapes and materials have been described above.
• the heat radiation blocks, insulating films, and power distribution films of these shapes are used in these modules.
• Components such as different types combined with each other Module. Therefore, according to the present invention, it is possible to provide various semiconductor light emitting modules that make use of the characteristics of various components. It goes without saying that these semiconductor light emitting modules can be used as various light emitting materials such as signals as well as lighting.
• FIG. 10 is a diagram showing a state of heat dissipation when a conventional semiconductor light emitting module is used
• FIG. 11 is a diagram showing a state of heat dissipation when the semiconductor light emitting module of the present invention is used.
• the semiconductor light emitting module of the present invention used for the measurement here is the one manufactured in Manufacturing Method Example 1 of the first embodiment, and considering that FIGS. 10 and 11 are used for ceiling lighting. The measurement was carried out by placing it downward.
• FIG. 10 When FIG. 10 is compared with FIG. 11, compared with the case where the conventional semiconductor light emitting module is used, in the semiconductor light emitting module of the present invention, air current is generated around the heat dissipation block, and the heat generated by the element force is generated in the module. It can be understood that heat is efficiently dissipated without accumulation.
• FIGS. 12 and 13 are diagrams showing thermal characteristics when the conventional semiconductor light-emitting module and the semiconductor light-emitting module manufactured in Manufacturing Method Example 1 of the first embodiment are each made to emit light.
• the figure shows the characteristics calculated on the assumption that they were manufactured in the above, the theoretical characteristics of the present invention, and the characteristics actually obtained by experiments of the present invention.
• Fig. 12 shows the characteristics when used as ceiling lighting
• Fig. 13 shows the characteristics when a semiconductor light emitting module is used as wall lighting.
• the electrical input power input
• FIGS. 14 and 15 are diagrams showing temperatures when light is emitted with constant power as in the first embodiment.
• FIG. 14 when a conventional semiconductor light emitting module is used as ceiling lighting and when various embodiments of the present invention are used, light is emitted by passing a predetermined current, and the temperature of the element at that time is simulated. It is a thing.
• FIG. 15 when a conventional semiconductor light emitting module is used as the wall illumination and when the various embodiments of the present invention are used, light is emitted by passing a predetermined current, and the temperature of the element at that time is measured. simulation It is a thing. As can be understood with reference to FIGS. 14 and 15, it can be understood that the temperature of the deviation is lower when the various embodiments of the present invention are used than when the conventional semiconductor light emitting module is used. .
• the semiconductor light emitting module of the present invention is formed directly on the heat dissipation block, so that it is easy to manufacture and the cost can be reduced. Luminescence can be achieved.
• the above-described first embodiment can efficiently dissipate heat from the light emitting module and can obtain high illuminance using a large current.
• this embodiment by combining a reflective plate and phosphor, As a whole, high-intensity illumination is obtained and light extraction efficiency is improved.
• the technology of the present embodiment can be used for a traffic light that only requires illumination, can be used alone, or can be used alone.
• it is possible to achieve further effects. For example, even if the light emitting module of the first embodiment is simply provided with a reflecting plate or the like, the heat dissipation characteristics deteriorate accordingly, and it is difficult to obtain high brightness.
• the reflectance is improved by applying this embodiment, Even if the thermal efficiency is slightly reduced, the luminance can be further improved.
• the reflection-enhancing layer is formed by plating or the like
• the present embodiment can be applied to the light emitting module of the first embodiment using a flat plate such as a sheet metal press. Limited to processed products. Further, since the increased reflection layer itself of this embodiment is an insulating layer, when the back surface of the module of the first embodiment is used for an electrode type light emitting module, an appropriate portion of the above insulating film is removed. In addition, it is not necessary to use the insulating storage case described in the first embodiment.
• FIG. 18 is a front view showing the structure of the semiconductor light emitting module according to the present embodiment
• FIG. 19 is a partially enlarged front view and cross-sectional view.
• the semiconductor light emitting module 2501 of this embodiment includes a highly reflective plate 2502 that performs heat dissipation and has a light reflecting function, an insulating film 2503 that covers and insulates the highly reflective plate 2502, and is further stacked via the insulating film 2503.
• the distribution film 2504 is provided. One that emits light when actually energized, or The plurality of semiconductor light emitting elements 2511 are connected to the power distribution film 2504 through the conductive wires 2512. With this structure, it is possible to make all the mounting surfaces of the semiconductor light emitting element 2511 highly reflective surfaces. Note that the distribution film 2504 in the front view of FIG. 18 is omitted for the sake of clarity, but a positive pole and a negative pole are formed as shown in FIG.
• the high reflection plate 2502 has a total reflectivity of 98% or more that can extract a sufficient amount of light if the total reflectivity is 95% or more.
• the high reflection plate 2502 is formed, for example, by forming an adhesion layer on an aluminum base material, forming a layer of pure aluminum or pure silver, and further forming a reflective film by depositing titanium oxide or silicon oxide. Can be implemented.
• the increased reflection film can reduce deterioration due to oxidation of pure aluminum or pure silver in the inner layer, can maintain the initial reflectance longer, and can stabilize the product quality.
• the highly reflective plate 2502 is formed by depositing titanium oxide or silicon oxide on the above-mentioned adhesive layer and pure aluminum or pure silver layer on a metal finished in a desired shape by, for example, a press carriage or the like. It can be formed and manufactured, or after forming such a reflection-reflecting film on a plate-like or coil-like metal, it can be finished into a desired shape by pressing or the like. In one example of this embodiment, force using MIR02-SILVER and MIR02 from Alanod. These products have a total reflectivity of 98% and 95%, respectively. As the highly reflective plate used in the present invention, any plate known in the art can be used as long as it can achieve the object of the present invention, other than those made by Allanod. Note that by connecting the conductive wire 2512 to the highly reflective plate 2502, the highly reflective plate 2502 itself can be used as one of the electrodes.
• the insulating film 2503 has a shape that at least electrically insulates the highly reflective plate 2502 and the power distribution film 2504, and has a hole for transmitting at least light emitted from the semiconductor light emitting element 2511 to the outside.
• a substrate such as FR-4 or polyimide is prepared, and the insulating film 2503 is formed by sandwiching it between the power distribution film 2504 and the highly reflective plate 2502, or the power distribution film 2504 using an adhesive having an insulating function.
• the highly reflective plate 2502 can be bonded together to form an insulating layer to form the insulating layer 2503.
• the power distribution film 2504 is formed so as to provide an electrode to the semiconductor light emitting element 2511, it can be used by, for example, sheet metal, or formed on the highly reflective plate 2502.
• the attached insulating film 2503 can be provided by forming a metal film by plating or vapor deposition.
• the power distribution film 2504 is made of sheet metal, at least light emitted from the semiconductor light emitting element 2511 should not be blocked! / Since the shape and size of the hole can be determined by any method known in the art, description thereof is omitted here.
• the metal film can be formed by an appropriate method known in this technical field that can form the transmission hole while covering the insulating film 2503.
• the insulating film 2503 and the distribution film 2504 can be formed using a generally used printed circuit board. These enable free power supply in series, parallel, or a combination thereof.
• the semiconductor light emitting element 2511 and the power distribution film 2504 are electrically connected by the conductive wire 2512.
• the power supplied from the power supply via the terminal 2514 provided in any part of the power distribution film 2504 is supplied to the electrode of the semiconductor light emitting element 2511 through the conductive wire 2512.
• the shape and structure of the terminal 2514 are known in this technical field, and a misaligned one can also be used.
• a lead wire or the like may be soldered, or it may be attached to the power distribution film 2504 as a separate part. Good.
• the surface of the power distribution film 2504 to which the conductive wire 2512 is connected is preferably provided with a surface coating known in this technical field, such as the semiconductor light emitting device 2511, the conductive wire 2512 and the surface coating. In some cases, it may be desirable to protect them by sealing them with grease or the like.
• FIG. 20 is a front view and a lateral side view showing the structure of another example of the semiconductor light emitting module that works on the present embodiment.
• the light quantity is increased by mounting a plurality of semiconductor light emitting elements 2511 of the same color in one bonding area.
• FIGS. 21 to 23 are a front view and a lateral side view showing the structure of still another example of the semiconductor light emitting module according to the present embodiment.
• the surface tension can be used to stabilize the dimensional accuracy when a resin containing phosphor or diffusing agent is applied.
• the dome 2802 can be formed. By forming the dome 2802 by such a method, as shown in FIG. 25B, the loss light is reduced as compared with the conventional case, the light extraction efficiency is improved, and high luminance light emission can be realized.
• FIG. 28 is a diagram showing a state in which the reflective structure of the present embodiment is developed.
• the dome 2802 of the phosphor layer is a hemisphere, as can be understood by referring to a force diagram in which a plurality of semiconductor light emitting elements 2511 of the semiconductor light emitting module 2501 shown in FIG. 22 are mounted. There is no. This is because when a plurality of light-emitting elements are used, light loss is less generated even if the phosphor layer is not made a complete hemisphere as compared with the case of using a single light-emitting element. Similarly, when an ultraviolet light emitting element is used, it is not necessary to achieve a color balance between the light emitting element and the phosphor. The dome 2802 can be kept lower.
• the semiconductor light emitting module 2501 shown in FIG. 22 is further covered with a case 3002 as shown in FIG. 24, so that the light emitted from the semiconductor light emitting element 2511 can be further collected.
• Case 3002 can be made of a material such as polycarbonate, acrylic, or glass, but any member known in the art can be used.
• the semiconductor can be sufficiently protected by the case 3002, sealing with the above-described grease is unnecessary.
• FIG. 25B is a diagram for explaining an effect that the method of this example does not have in the related art.
• FIG. 25A which shows a conventional general phosphor or diffusing agent formation structure
• the structure according to this example shown in FIG. 25B has a uniform structure of phosphor or diffusing agent compared to the conventional technology. Therefore, loss of light can be further prevented. This point will be described in detail.
• the phosphor or diffusing material depends on the direction of light emitted from the semiconductor light emitting element 2511. The content of the agent is different, and it becomes difficult to obtain uniform white color and diffused light.
• the dome 2802 centering on the semiconductor light emitting element 2511 is formed by phosphor or a diffusing agent resin.
• the phosphor or diffusing agent is formed by mixing it with a resin such as silicon or epoxy.
• a resin such as silicon or epoxy.
• a concave groove 2801 having a circular shape centering on the semiconductor light emitting element 2511 is formed on the highly reflective plate 2502, and a dome 2802 is formed thereon using the surface tension of the resin.
• a uniform layer of the resin was formed around the semiconductor light emitting element 2511 so that the light would pass through the resin by the same distance.
• the concave groove 2801 can be formed in any size, position, and shape as long as the surface tension of the resin can be used. You can also use the deviation method!
• FIG. 26 shows the brightness of a mirror using a mirror finished product by rolling aluminum with a total reflectance of 75% as the material of the reflector plate, MIR02 and MIR 02-Silver made by Allanod. It is a figure which shows the measurement result.
• a semiconductor light-emitting element 2511 having the same characteristics was used as the LED, a dome was formed under the same conditions using a silicon resin containing a phosphor, and the total luminous flux was measured using an integrating sphere.
• MIR02—Silver improves luminous efficiency more than twice compared to conventional rolled aluminum products. It is understood that it can be made.
• the lumen value per watt is 114 lumens ZW. This is about 1.5 times the luminous efficiency of the current field average. This is because the reflectance of the reflection plate affects the light emission efficiency.
• the light emitted from the semiconductor light-emitting element force is applied to the phosphor contained in the resin, and the original light and the excited light are repeatedly reflected in the resin.
• the difference in reflectivity of the reflecting surface has a great influence. Referring to FIG. 27, it can be understood that the higher the reflectance of the reflection plate, the more the attenuation of the amount of reflected light after repeated reflections can be suppressed. Therefore, it can be understood that less attenuation of reflected light leads to improvement in luminous efficiency.
• FIGS. 29A to 29C are diagrams showing the results of the luminous efficiency test of the present embodiment.
• FIGS. 29A to 29C show how the light emission efficiency changes due to secular change.
• the semiconductor module using MIR02—Silver of this embodiment maintains 90%, whereas the conventional silver-plated product It is understood that the semiconductor module of this embodiment maintains the initial luminous efficiency.
• the semiconductor light-emitting module has each of the semiconductor light-emitting elements arranged in contact with the surface, and the heat dissipation block serving as one of the electrodes for supplying power to each semiconductor light-emitting element. And an insulating film that covers any part of the surface of the heat dissipation block except for each semiconductor light emitting element and its vicinity, and is arranged in contact with any surface of the insulating film to be electrically connected to each semiconductor light emitting element.
• the semiconductor light emitting module has a distribution film that is the other electrode of the electrode that supplies power, so that the heat generated in the light-emitting element is efficiently dissipated and the temperature rise is suppressed, so that the luminance characteristics are maintained even when a large current is passed. It is possible to provide a semiconductor light emitting module, a device, and a method for manufacturing the semiconductor light emitting module that can obtain high luminance by preventing bad effects. In addition, higher reflectance can be maintained, uniform white light can be obtained, and light extraction efficiency can be improved to enable high luminance light emission.
• the present invention relates to a semiconductor light emitting module, a device, and a method for manufacturing the same that enable high-intensity light emission with high power.
• heat generated in a light emitting element is efficiently By thoroughly dissipating heat and suppressing temperature rise, it is possible to provide a semiconductor light-emitting module, device, and method for manufacturing the same that can prevent luminance characteristics from deteriorating even when a large current is passed and obtain high luminance.

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• 2007
  • 2007-04-27 JP JP2008513302A patent/JPWO2007126074A1/ja active Pending
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