WO2006106618A1 - コンタクトプローブ - Google Patents

コンタクトプローブ Download PDF

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Publication number
WO2006106618A1
WO2006106618A1 PCT/JP2006/306115 JP2006306115W WO2006106618A1 WO 2006106618 A1 WO2006106618 A1 WO 2006106618A1 JP 2006306115 W JP2006306115 W JP 2006306115W WO 2006106618 A1 WO2006106618 A1 WO 2006106618A1
Authority
WO
WIPO (PCT)
Prior art keywords
probe
contact
contact probe
cantilever
piezoelectric element
Prior art date
Application number
PCT/JP2006/306115
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Koji Ishikawa
Jun Tominaga
Original Assignee
Nhk Spring Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nhk Spring Co., Ltd. filed Critical Nhk Spring Co., Ltd.
Publication of WO2006106618A1 publication Critical patent/WO2006106618A1/ja

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06705Apparatus for holding or moving single probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716Elastic
    • G01R1/06722Spring-loaded
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Definitions

  • the present invention relates to a contact probe that is connected to an electrode or a terminal portion of an electronic component such as a liquid crystal panel or an integrated circuit and is used for a conduction state inspection or an operation test in the electronic component.
  • the contact terminal of the LCD panel is electrically contacted via a contact probe, and the other end of each contact probe is electrically connected. Connected to a flat cable, etc. via a contact block that connects to the flat cable, and tested the LCD panel by applying various test signals to the inspection device connected to this flat cable!
  • Some of these contact probes collectively form a plurality of beam-shaped probes corresponding to a plurality of inspection electrodes on a substrate surface by using a lithography technique of a semiconductor manufacturing method (Patent Documents 1 to 4). reference). Furthermore, there is a type in which a conductive foil such as a flexible substrate is subjected to pattern etching at an extremely narrow pitch by lithography, and a bump is formed as a probe head on this pattern (see Patent Document 5). Since these contact probes use a lithographic technique, they can cope with the recent narrowing of the electrode pitch.
  • Patent Document 1 Japanese Patent Laid-Open No. 8-50146
  • Patent Document 2 Japanese Patent No. 3123483
  • Patent Document 3 Japanese Patent Laid-Open No. 2003-215161
  • Patent Document 4 Japanese Translation of Special Publication 2004—503785
  • Patent Document 5 Japanese Patent Laid-Open No. 2003-98189
  • cantilever-type contact probes generally cannot increase the load applied to the probe head, if there is an oxide film or dirt covering the electrode to be inspected during the above-described inspection, it can break through these. However, there was a tendency that the final excessive load was applied to the probe head, resulting in damage and the life of the contact probe was shortened.
  • the present invention has been made in view of the above, and an object of the present invention is to provide a contact probe having a long life and high accuracy while maintaining an ultra narrow pitch.
  • the contact probe according to claim 1 has a probe directly connected to the inspection object when the inspection object is electrically inspected.
  • the contact probe comprises a vibrating means for minutely vibrating the probe.
  • the vibration means is a piezoelectric element provided on the probe, and the probe is driven by driving the piezoelectric element. It is characterized by minute vibrations.
  • the vibrating means is a coil provided on the probe, and a current applied to the coil in a region where a magnetic field is formed.
  • the probe is microvibrated by changing.
  • the contact probe according to claim 4 is the above-described invention, wherein the vibration means further includes a plurality of fixed probes provided between a plurality of beam-like probes.
  • the probe is microvibrated by changing the voltage applied between each probe and each fixed probe.
  • the contact probe according to claim 5 is characterized in that, in the above invention, the probe is a beam-like probe.
  • the probe is formed of a conductive needle member and a conductive bar in a holder formed substantially perpendicular to the contact surface.
  • the probe is characterized in that it is confined by being connected to the contact member, and the tip of the conductive needle-like member protrudes from the opening of the holder so as to be extendable and contractible.
  • the contact probe according to claim 7 is characterized in that, in the above invention, the vibration means is provided on a support member that forms an opening of the holder.
  • the contact probe according to claim 8 is characterized in that, in the above invention, the probe is a needle probe.
  • the contact probe according to claim 9 is characterized in that, in the above invention, the probe is a bump formed on a support member.
  • the probe is a thin plate member, a plate surface direction is a pressing direction, and the plate member is Ni.
  • the ratio of width to thickness is 5 or more.
  • the contact probe according to claim 11 is characterized in that, in the above invention, the vibrating means vibrates the probe tip in a direction substantially perpendicular to the contact surface.
  • the contact probe according to claim 12 is characterized in that, in the above invention, the vibrating means vibrates the probe tip substantially parallel to the contact surface.
  • the contact probe according to claim 13 has a plurality of probes in the above invention, and the plurality of probes are covered with a holding member that holds the pitch of each probe. It is characterized by.
  • the vibration means rubs the plurality of probes so as to make a minute vibration, and the minute vibration removes dirt on the electrode to be inspected to break through an oxide film or the like. Therefore, the contact surface can be exposed and the desired contact resistance can be secured with a low contact load, reducing the load applied to the contact probe, achieving a long life and accuracy while maintaining a compact size that maintains an ultra-narrow pitch. High contact probe can be realized.
  • FIG. 1 is a perspective view showing a schematic configuration of a contact probe according to Embodiment 1 of the present invention.
  • FIG. 2 is a perspective view showing the tip portion of the cantilever.
  • FIG. 3 is a perspective view showing a configuration of a contact probe with a flexible cable attached.
  • FIG. 4 is a diagram showing a state where the probe block is connected.
  • FIG. 5 is a view showing a modification of the probe head.
  • FIG. 6A shows a state in which, in the contact probe manufacturing process shown in FIG. 1, the surface on which the probe head is formed is opened and a hole having a triangular cross section is formed by anisotropic etching.
  • FIG. 6B is a diagram showing a state where a seed layer for forming the electo-mouth and a resist corresponding to the plate thickness of the cantilever are formed in the contact probe manufacturing process shown in FIG.
  • FIG. 6C is a diagram showing a state in which the resist corresponding to the cantilever is removed in the contact probe manufacturing process shown in FIG.
  • FIG. 6D is a diagram showing a state where a cantilever is formed in the contact probe manufacturing process shown in FIG. 1.
  • FIG. 6E is a diagram showing a state in which a hold film and a support member are formed in the contact probe manufacturing process shown in FIG.
  • FIG. 6F is a diagram showing a state where a piezoelectric element is formed on a support member in the contact probe manufacturing process shown in FIG. 1.
  • FIG. 7 is a diagram showing a modification of the first embodiment of the present invention.
  • FIG. 8 is a diagram showing a modification of the first embodiment of the present invention.
  • FIG. 9 is a diagram showing a modification of the first embodiment of the present invention.
  • FIG. 10 is a diagram showing a modification of the first embodiment of the present invention.
  • FIG. 11 is a perspective view showing a schematic configuration of a contact probe according to Embodiment 2 of the present invention.
  • FIG. 12 is a perspective view showing a schematic configuration of a contact probe according to Embodiment 3 of the present invention.
  • FIG. 13 shows a schematic configuration of a contact probe according to Embodiment 4 of the present invention. It is sectional drawing.
  • FIG. 14 is a view showing the back surface of the contact probe shown in FIG.
  • FIG. 15 is a perspective view showing a schematic configuration of a contact probe according to Embodiment 5 of the present invention.
  • FIG. 16 is a perspective view showing a schematic configuration of a contact probe according to Embodiment 6 of the present invention.
  • FIG. 17 is a top view of the contact probe shown in FIG.
  • FIG. 1 is a perspective view showing a configuration of a contact probe according to Embodiment 1 of the present invention.
  • a contact probe 10 performs an electrical inspection by lowering a probe head 1 to an electrode of an electronic component such as a liquid crystal panel and bringing the electrode and the probe head 1 into contact with each other.
  • the contact probe 10 has a plurality of cantilevers 2 each having a cantilever structure arranged in parallel.
  • a probe head 1 having a triangular plate shape and a pointed tip is vertically provided at the tip of the cantilever 2.
  • the contact probe 10 is roughly divided into a movable part 11 on the probe head 1 side and a fixed part 12 on the base side. The length of the movable part 11 and the fixed part 12 is about 2 mm each.
  • the cantilever 2 is made of Ni, and the surface thereof is plated with 1 ⁇ m by an Au—Co alloy. 400 cantilevers 2 are arranged in parallel, and are arranged at a pitch of 0 ⁇ m as shown in FIG.
  • the cantilever 2 is formed in a plate shape, has a thickness of 20 / ⁇ ⁇ , a width of 100 m, a probe head height of 100 ⁇ m, and a gap between adjacent cantilevers 2 of 20 ⁇ m.
  • each cantilever 2 is covered so as to cover each cantilever 2.
  • a hold film 3 for connecting and holding the lever 2 is provided.
  • the hold film 3 has a thickness of 5 to: LO m, and is formed of a low elastic body compared to the cantilever 2. For example, it is formed by BCB (benzocyclotene) resin.
  • a support member 4a is provided on the probe head 1 side of the fixed portion 12 so as to cover and connect each force punch lever 2 with the same material as the hold film 3, and the piezoelectric element 4 is provided on the upper surface thereof.
  • This piezoelectric element 4 expands and contracts by being polarized in the longitudinal direction of the cantilever 2. Therefore, when the piezoelectric element 4 expands and contracts due to the piezoelectric effect, the upper surface side of each cantilever 2 expands and contracts, and the tip side of each cantilever 2 vibrates up and down.
  • the piezoelectric element 4 is formed of PZT and has a thickness of 10 ⁇ m, and the electrode is patterned with Pt. The thickness of this electrode is 0.5 m.
  • an anisotropic conductive film 5 is formed on the upper surface of the cantilever 2, and each cantilever 2 is electrically connected. That is, the anisotropic conductive film 5 has conductivity in a direction perpendicular to the surface where the cantilever 2 and the anisotropic conductive film 5 are in contact with each other, and functions as an extraction electrode with respect to the upper surface.
  • the electrode of the piezoelectric element 4 and the extraction end of the anisotropic conductive film are electrically connected to the measuring device 20 side, and the electrode of the piezoelectric element 4 is connected to the oscillation unit 22, The take-out end is connected to the measurement unit 21.
  • the control unit 23 controls the measurement unit 21 and the oscillation unit 22. In particular, when the probe head 1 comes into contact with the electrode to be inspected, the control unit 23 outputs a signal of a predetermined frequency from the oscillation unit 22 and drives the piezoelectric element 4 to drive the probe head 1 and the inspection target. Make sure to remove the acid film and dirt between the electrodes and make sure they are in contact.
  • a flexible cable (FPC) 13 can be used for electrical connection between the contact probe 10 and the measuring device 20.
  • the FPC 13 is also used for mounting to the probe block 14.
  • the contact probe 10 is installed to be inclined downward with respect to the horizontal plane of the probe block 14. Therefore, as shown in FIG. 5, the shape of the probe head 1 may be a rectangular plate shape that is not a triangular plate shape like the probe head 31. In short, a pointed part in the lower direction may be used.
  • the probe head is made of SiO formed on the Si wafer substrate 41 using a resist.
  • FIG. 6A Open the surface where 1 is to be formed, and form a hole with a triangular cross section by anisotropic etching (Fig. 6A).
  • a resist corresponding to the seed layer 43 for forming the elect port and the plate thickness of the cantilever 2, that is, 100 / zm is formed (FIG. 6B).
  • the resist corresponding to the cantilever 2 is removed by reactive ion etching (FIG. 6C).
  • linear Ni is formed in the removed area by electret forming to form cantilever 2 (Fig. 6D).
  • BCB is laminated so as to cover the upper surface of the cantilever to form the hold film 3 and the support member 4a (FIG. 6E).
  • the piezoelectric element 4 is formed on the support member 4a. That is, the pattern that is PZT and the electrode that applies voltage to it is formed by Pt (Fig. 6F). Thereafter, the Si wafer substrate 41 is removed, and the contact probe 10 is formed by connecting the anisotropic conductive film.
  • the piezoelectric element 4 of the contact probe 10 shown in FIG. 1 is a force that is driven to expand and contract in the longitudinal direction of the cantilever 2. Like the piezoelectric element 51 shown in FIG. You may make it extend-contract drive in a perpendicular direction.
  • the cantilever 2 is extended and contracted in the longitudinal direction, so that the probe head 1 minutely vibrates up and down and can easily break through the acid film as described above.
  • the cantilever 1 The pitch of the cantilever 2 can be variably set by driving to extend and contract in a direction perpendicular to the longitudinal direction of 2. Since the pitch of the cantilever 2 changes depending on environmental conditions such as temperature, the pitch can be adjusted by the expansion and contraction movement in the vertical direction.
  • the cantilever 2 may be expanded and contracted in the longitudinal direction, and the probe head 1 may be vibrated in a direction substantially perpendicular to the contact surface, or the probe head 1 may be substantially horizontal with respect to the contact surface. You may make it vibrate in the direction, for example, right and left and back and forth. Furthermore, you may combine these vibration directions as appropriate.
  • a piezoelectric element 52 that is extended and contracted in the longitudinal direction of the cantilever 2 may be provided for each cantilever 2.
  • the desired cantilever 2 is caused to vibrate minutely, and electrical contact can be made reliably. That is, dirt on the electrode to be inspected is removed by minute vibration of each cantilever 2, and an oxide film, etc.
  • the contact surface can be exposed and the desired contact resistance can be secured with a low contact load, reducing the load applied to the contact probe and reducing the size while maintaining an extremely narrow pitch. While achieving this, it is possible to realize a contact probe with a long life and high accuracy.
  • a piezoelectric element 53 that is extended and contracted in a direction perpendicular to the longitudinal direction of the cantilever 2 may be provided between adjacent cantilevers 2.
  • the pitch can be adjusted more finely and flexibly.
  • the contact probe 10 described above is not limited to a force that has a cantilever structure, and may have a structure that supports both end forces.
  • two contact probes 10 may be opposed to each other, and the tip of each cantilever 12 may be arranged in a staggered manner.
  • the pitch of each probe head is halved as compared with the case of one probe head, and it is possible to cope with the electrode inspection with a narrower pitch.
  • the above-described hold film 3 is formed on the upper surface of the cantilever 2 and has a! / Capping force, which is not limited thereto, and may be formed so as to cover the lower surface of the cantilever 2, or the cantilever 2 You can form it to fill the gap!
  • the base material of the cantilever 2 is not limited to the force formed by Ni, but is not limited to Fe-based alloy, Ni-based alloy, Cu-based alloy, aluminum, tungsten, silicon, carbon and other metals, polyimide, etc.
  • the purpose may be ceramics such as alumina (Al 2 O 3) or silica (SiO 2). Ma
  • the plating of cantilever 2 is preferably a highly conductive metal such as Au, Rd, or Pt.
  • the hold film 3 and the support member 4a are not limited to BCB, and may be realized by polyimide or the like.
  • the piezoelectric element 4 may be formed of other piezoelectric materials, for example, LiNbO.
  • the tip of the cantilever 2 is vibrated minutely using the piezoelectric element 4.
  • the thin film coil 61 is provided and energized in a magnetic field, thereby providing a cantilever. 1. Make the tip of 2 minutely vibrate.
  • FIG. 11 is a perspective view showing a schematic configuration of the contact probe according to the second embodiment of the present invention.
  • the contact probe 60 is provided with a thin film coil 61 on the hold film 3 instead of the piezoelectric element 4.
  • Other configurations are the same as those in the first embodiment.
  • the thin film coil 61 is realized by a conductive material such as Cu or Ni.
  • the thin film coil 61 is realized by a coil having 30 turns of Cu having a thickness of 2 ⁇ m and a width of 20 ⁇ m.
  • the thin film coil 61 is formed on the BCB sheet 3a formed on the hold film 3, and the central portion of the thin film coil 61 is connected to the back surface of the BCB sheet 3a and is electrically connected to the pad on the hold film 3. It is connected.
  • the thin film coil 61 When the thin film coil 61 is energized in the magnetic field, the thin film coil 61 is displaced according to the energization amount, and the tip portion of the cantilever 2 vibrates minutely by applying an AC signal.
  • the tip portion of the cantilever 2 is vibrated minutely using the piezoelectric element 4, but in this third embodiment, the cantilever 2 is used as one of the comb-teeth electrodes. It is made to vibrate.
  • FIG. 12 is a perspective view showing a schematic configuration of a contact probe according to Embodiment 3 of the present invention. As shown in FIG. 12, this contact probe 70 is not provided with the piezoelectric element 2 or the thin film coil 61, and the opposing comb electrode 72 is formed between each cantilever 2, and the opposing comb electrode 72 and the cantilever 2 A comb electrode is formed.
  • the cantilever 2 When a voltage is applied to the opposing comb electrode 72, the cantilever 2 changes up and down by an electrostatic force between the opposing comb electrode 72 and the cantilever 2. Therefore, when the voltage applied to the opposing comb electrode 72 is an AC signal, the tip portion of the cantilever 2 slightly vibrates.
  • the force was a cantilever structure.
  • the needle-like member and the panel portion The contact probe using the material is provided with vibration means.
  • FIG. 13 is a cross-sectional view showing a schematic configuration of the contact probe according to the fourth embodiment of the present invention.
  • FIG. 14 is a view showing the back surface of the contact probe shown in FIG.
  • the contact probe 80 has a plurality of holders 84 extending in a direction perpendicular to the contact surface and arranged at a predetermined pitch, and each holder 84 has a needle that makes contact with the lead wire 86 side.
  • the needle-like member 81, the panel member 83, and the needle-like member 82 that comes into contact with the electrode to be inspected are confined in an electrically fixed state, and the tip portion of the needle-like member 82 is inspected. It protrudes from the opening on the target electrode side so that it can expand and contract, and contacts the electrode to be inspected with contact load.
  • Piezoelectric element 85 is disposed on the surface of the support member having an opening from which the tip of needle-like member 82 projects. By applying a voltage to the piezoelectric element 85 and causing it to vibrate, the needle-like member 82 can be caused to vibrate in the horizontal direction with respect to the surface of the support member. Contact with the electrode to be inspected can be ensured and contact can be made with low contact weight. Further, the pitch between the needle-like members 82 can be made variable.
  • the vibration direction of the piezoelectric element 85 is set to a direction perpendicular to the inspection target electrode, and the needle-like member 82 is moved up and down, so that the tip portion of the needle-like member 82 and the inspection target electrode are moved. Make sure the contact is reliable and with a low contact load.
  • vibration means is provided on a contact probe having a high rigidity and a plurality of needle-like members.
  • FIG. 15 is a perspective view showing a schematic configuration of a contact probe according to the fifth embodiment of the present invention.
  • this contact probe 90 is composed of cylindrical members arranged with a conical tip, and the tip is bent at about 90 degrees to be inspected electrode direction. It has a plurality of needle probes 91 facing in the direction.
  • the plurality of needle probes 91 have a pitch between the needle probes 91 held by the support member 92 on the base side, and a piezoelectric element 93 is provided on the upper surface of the support member 92.
  • the tip portion of the needle probe 91 is minutely vibrated by the minute vibration of the piezoelectric element 93, so that the contact between the tip of the needle probe 91 and the electrode to be inspected can be made reliably and with a low contact weight. Can do.
  • the minute vibration direction of the piezoelectric element 93 may be a direction parallel to the surface of the electrode to be inspected or a perpendicular direction.
  • the tip of the needle probe 91 can be expanded in a parallel direction by the voltage applied to the piezoelectric element 93, and the pitch can be set variably.
  • the vibration means is provided on the contact probe in which a plurality of bumps are formed on the surface of the support member.
  • FIG. 16 is a perspective view showing a schematic configuration of a contact probe according to Embodiment 6 of the present invention.
  • FIG. 17 is a top view of the contact probe shown in FIG. 16 and 17, the contact probe 100 has a support member 101 on a flat plate realized by polyimide or the like, and a plurality of Ni formed near the edge of one surface of the support member 101.
  • the bumps 103 are arranged in a straight line. The bump 103 comes into contact with the inspection target electrode.
  • the bumps 103 are arranged at a predetermined pitch, and lead by the wiring pattern 102 realized by Ni.
  • a piezoelectric element 104 is provided on the other side of the support member 101 and on the base side.
  • the portions of the support member 101 corresponding to the bumps 103 and the wiring patterns in the vicinity thereof are formed with a gap 105 by a dicing saw or the like so that the bumps 103 can easily vibrate.
  • the bump 103 vibrates minutely due to the minute vibration of the piezoelectric element 104, and this causes the bump 103 to be in contact with the inspection target electrode. Contact can be made reliably and with a low contact load.
  • the direction of minute vibration of the piezoelectric element 104 is relative to the surface of the electrode to be inspected. Parallel directions or perpendicular directions. Further, the bump 103 is spread in a parallel direction by a voltage applied to the piezoelectric element 104, and the pitch is set to be variable.
  • the force described for the contact probe having a plurality of probes is not limited to this, and the contact probe may be composed of one probe.
  • the vibration means such as a piezoelectric element is provided on the base side of the probe. In short, the tip of the probe only needs to vibrate.
  • the contact probe according to the present invention is connected to an electrode or a terminal portion of an electronic component such as a liquid crystal panel or an integrated circuit, and is suitable for a conduction state inspection or an operation test in the electronic component. .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
PCT/JP2006/306115 2005-03-31 2006-03-27 コンタクトプローブ WO2006106618A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005104604A JP2006284362A (ja) 2005-03-31 2005-03-31 コンタクトプローブ
JP2005-104604 2005-03-31

Publications (1)

Publication Number Publication Date
WO2006106618A1 true WO2006106618A1 (ja) 2006-10-12

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JP (1) JP2006284362A (ko)
KR (1) KR100966907B1 (ko)
CN (1) CN101151541A (ko)
WO (1) WO2006106618A1 (ko)

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CN101261286B (zh) * 2007-03-09 2011-05-11 海鸿科技股份有限公司 探针装置

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JP5294195B2 (ja) * 2008-05-01 2013-09-18 株式会社 東京ウエルズ ワーク特性測定装置およびワーク特性測定方法
KR100972049B1 (ko) * 2009-03-10 2010-07-22 주식회사 프로이천 패널 테스트를 위한 프로브 유닛
JP5356148B2 (ja) * 2009-08-21 2013-12-04 富士通株式会社 プローバー装置及び検査方法
JP5036892B2 (ja) * 2010-05-10 2012-09-26 株式会社神戸製鋼所 コンタクトプローブ
JP5597564B2 (ja) 2011-02-04 2014-10-01 株式会社日本マイクロニクス プローブ装置及びその製造方法
JP5947139B2 (ja) * 2012-07-27 2016-07-06 株式会社日本マイクロニクス プローブ及び電気的接続装置
JP6079456B2 (ja) * 2013-06-07 2017-02-15 三菱電機株式会社 半導体装置の検査方法
CN105785083B (zh) * 2016-04-12 2019-01-15 义乌臻格科技有限公司 一种耙状悬臂梁结构的微探针及其制备方法
CN107677953B (zh) * 2017-09-29 2020-05-05 京东方科技集团股份有限公司 一种探针系统及其控制方法、点灯机
CN108682632A (zh) * 2018-05-11 2018-10-19 德淮半导体有限公司 半导体检测设备及其操作方法

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