WO2007083769A1 - 接点装置およびその製造方法 - Google Patents
接点装置およびその製造方法 Download PDFInfo
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- WO2007083769A1 WO2007083769A1 PCT/JP2007/050838 JP2007050838W WO2007083769A1 WO 2007083769 A1 WO2007083769 A1 WO 2007083769A1 JP 2007050838 W JP2007050838 W JP 2007050838W WO 2007083769 A1 WO2007083769 A1 WO 2007083769A1
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- Prior art keywords
- conductive film
- metal
- contact
- alloy
- film
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00674—Treatments for improving wear resistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/0005—Anti-stiction coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0096—For avoiding stiction when the device is in use, i.e. after manufacture has been completed
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/04—Electrodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
- G01R1/06761—Material aspects related to layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
Definitions
- the present invention relates to a contact device and a manufacturing method thereof. More specifically, the present invention relates to a contact device used for a contact having a low contact pressure, for example, a MEMS (MicroElectroMechanical System) switch, and a manufacturing method thereof.
- a MEMS MicroElectroMechanical System
- Patent application 2006 208841 Filing date July 31, 2006
- Patent Document 1 and Patent Document 2 describe a contact device manufactured by a wafer process using a Si substrate or the like as a material. These contact devices are switches with movable contacts that are displaced by bimetal or bimorph, and operate with minute drive power.
- the contact pressure is as low as about 10 mN or less, and therefore, a soft metal may be used as a contact material for the purpose of reducing the contact resistance between the contacts.
- the contact material used in such a case is Au or its alloy.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2003-281988
- Patent Document 2 JP 2004-055410 A
- a thin oxide film such as rhodium (Rh) may be formed on the contact surface between the contacts.
- a contact with such a coating has a longer contact life but a higher contact resistance at the contact. Therefore, it is not suitable for a contact device having a low contact pressure as described above.
- An object of the present invention is to provide a contact device that has been created in view of the above-described problems of the conventional example, can extend the contact life, and can reduce the contact resistance between the contact points, and a method for manufacturing the contact device.
- an object of the present invention is to provide a contact device and a method for manufacturing the same that can solve the above-described problems. This object is achieved by a combination of the features described in the independent claims.
- the dependent claims define further advantageous specific examples of the present invention.
- a method of manufacturing a contact device the step of forming a first conductive film on a support layer, and the first conductive film Forming a second conductive film containing a metal or alloy on the second conductive film, forming a third conductive film on the second conductive film, and heat-treating in an atmosphere containing oxygen to form the second conductive film.
- a contact device comprising a step of forming a surface layer that abuts against an opposing contact, including a metal oxide of the second conductive film that is diffused and deposited on the surface of the third conductive film and is oxidized
- a manufacturing method is provided.
- the temperature of the heat treatment is preferably lower than a temperature at which the metal or alloy and the first conductive film form an alloy.
- the metal or alloy of the second conductive film is efficiently diffused into the third conductive film.
- the first conductive film is not cured or the electrical characteristics are not deteriorated by alloying.
- the temperature of the heat treatment is preferably lower than the temperature at which the metal or alloy and the third conductive film form an alloy.
- the metal or alloy of the second conductive film is efficiently diffused with respect to the third conductive film, and is further efficiently deposited on the surface of the third conductive film.
- the diffusion coefficient in which the metal or alloy diffuses in the third conductive film is larger than the diffusion coefficient in which the metal or alloy diffuses in the first conductive film. Is preferred. As a result, the metal or alloy is more efficiently diffused in the third conductive film than in the first conductive film, so that a contact device having a desired structure can be efficiently manufactured.
- the metal or alloy is nickel.
- the first conductive film includes gold (Au)
- the third conductive film includes gold (Au) or a gold palladium (Au_Pd) alloy. This makes it possible to manufacture contact devices with excellent electrical characteristics and low contact resistance that are chemically stable and have a long life.
- the content of palladium in the third conductive film is preferably 20 atomic% or less. Thereby, the electrical resistance of the third conductive film can be kept low.
- the surface layer includes an oxide of a metal or an alloy within a depth of 30 nm or less from the surface of the surface layer.
- a contact device manufactured by the above manufacturing method is provided. As a result, it has good electrical characteristics, high yield and long life. A point device is supplied.
- a contact device comprising a metal film formed of a metal or an alloy, a conductive film formed on the metal film, a metal film and a conductive film.
- a contact device comprising a contact having: As a result, a very thin surface layer is formed on the surface of the contact, and welding without increasing the contact resistance can be prevented.
- the surface layer includes an oxide of a metal or an alloy within a depth of 30 nm or less from the surface of the surface layer. This prevents contact fusion without increasing the contact resistance at the contact.
- the metal or the alloy includes nickel (Ni).
- the contact device can be formed of an inexpensive and easily available material.
- the metal or alloy contained in the metal film diffuses into the conductive film until it reaches the contact surface by heating. As a result, when the surface layer is worn, the surface layer can be repaired.
- the metal film is supported by a conductive support layer formed of a material in which a metal or an alloy is less likely to diffuse than the conductive film.
- the conductive support layer includes gold (Au), and the conductive film includes gold (Au) or a gold palladium (Au_Pd) alloy. This makes it possible to form contacts that are chemically stable and have low contact resistance.
- the palladium content in the conductive film is preferably 20 atomic% or less. Thereby, the electrical resistance of the third conductive film can be kept low.
- a contact device that conducts electricity when a constant contact and a movable contact come into contact with each other, and the fixed contact is formed on the first conductive film formed on the support layer and the first conductive film.
- a contact device having a surface layer in contact with a movable contact which includes a metal oxide of the second conductive film deposited and oxidized on the surface of the third conductive film. This makes it possible to use a contact device that suppresses fusion, has a high manufacturing yield, has a long life, has low contact resistance, and has excellent electrical characteristics.
- the movable contact includes a first conductive film formed on the actuator and a metal or metal alloy formed on the first conductive film.
- the actuator in the above contact device, includes a piezoelectric material layer that expands and contracts when a voltage is applied.
- the actuator includes a heater that generates heat when a current is applied, and a bimorph that has a member that is heated and extended by the heater.
- a switch that has the above contact device and intermittently transmits a test signal in a semiconductor test apparatus. As a result, the test signal can be switched without degrading, and a long-life semiconductor test apparatus is supplied.
- a semiconductor test apparatus including the above switch is provided.
- a probe of a semiconductor test apparatus which is a metal or The metal film formed of an alloy, the conductive film formed on the metal film, the metal film and the conductive film are heat-treated in an atmosphere containing oxygen, and the metal of the metal film is diffused into the conductive film.
- a probe including an oxide obtained by oxidizing a metal or alloy deposited up to the surface of the conductive film and having a surface layer in contact with an opposing pad at the tip is provided. This allows semiconductor testing to be performed using probes with low contact resistance and long life. Also, if the surface layer of the probe is worn, the surface layer can be repaired by heat treatment, further extending the probe life.
- a semiconductor test apparatus including the above probe is provided.
- a semiconductor test apparatus capable of performing a precise test over a long period of time when the contact resistance by the probe is low is supplied.
- the contact device and the manufacturing method thereof in the contact device having a low contact pressure, it is possible to prevent contact welding without increasing the contact resistance. That is, in this contact device, a surface layer containing an oxide of a metal or an alloy is formed on the surface of the contact that comes into contact with the opposing contact. Since this surface layer is very thin as will be described later, the contact resistance of the contact is not increased despite the fact that the conductive film is hardened and contains an oxide that is non-conductive. In addition, since the surface layer is interposed between the contacts that contact each other, welding of the contacts is suppressed.
- the surface layer as described above allows the metal or alloy to diffuse into the conductor film that supports the surface layer, and further causes the metal or alloy that has diffused and precipitated to the surface of the conductor film to be exposed to the oxygen-containing atmosphere. Can be formed.
- FIG. 1 is a cross-sectional view showing a manufacturing process of a contact 10 in a contact device according to one embodiment.
- Garden 2 A cross-sectional view showing the structure of the contact 10 in the contact device according to one embodiment.
- Garden 3 A graph showing the distribution of metal elements measured in the film thickness direction from the surface of the contact 10. 4] This is a graph showing the dependency of the contact resistance at contact 10 and the rate of occurrence of welding with other contacts on the Pd concentration.
- FIG. 5 A plan view showing an example in which the contact device of FIG. 2 is applied to the bimorph switch 100.
- FIG. 6 is a cross-sectional view taken along line 1_1 in FIG.
- FIG. 7 is a cross-sectional view of microswitch 200.
- FIG. 4 A perspective view of the substrate 206.
- FIG. 9 A diagram showing a substrate preparation stage, a movable part formation stage, and a lead formation stage in the manufacture of the microswitch 200.
- FIG. 9 A diagram showing a substrate preparation stage, a movable part formation stage, and a lead formation stage in the manufacture of the microswitch 200.
- FIG. 10 is a diagram showing a through-hole forming stage in the manufacture of the microswitch 200.
- FIG. 11 A diagram showing a wiring board preparation stage in the manufacture of the microswitch 200.
- FIG. 12 is a diagram showing a fixing stage in manufacturing the microswitch 200.
- FIG. 13 A diagram showing an electrical connection stage in the manufacture of the microswitch 200.
- FIG. 14 A diagram showing a sealing stage in the manufacture of the microswitch 200.
- FIG. 15 A diagram showing the entire wiring board 212.
- FIG. 16 is a diagram showing the entire substrate 206.
- FIG. 17 is a diagram showing an entire substrate 216.
- FIG. 18 is a diagram showing a fixing stage, a sealing stage, and an electrical connection stage.
- Fig. 19 shows the cutting stage.
- FIG. 20 is a diagram schematically showing the overall structure of a semiconductor test apparatus 400 having a plurality of types of contact devices.
- FIG. 21 is a diagram schematically showing functions of the switching switch 201 and the probe pin 310 which are examples of contact devices included in the semiconductor test apparatus 401.
- FIG. 22 A diagram showing the shape and structure of the probe pin 310 mounted on the semiconductor test apparatus 401.
- FIG. 22 A diagram showing the shape and structure of the probe pin 310 mounted on the semiconductor test apparatus 401.
- FIG. 6 is a diagram schematically showing functions of 201 and probe pins 320.
- FIG. 24 is a diagram showing the shape and structure of a probe pin 320 mounted on a semiconductor test apparatus 402.
- FIG. 1 is a cross-sectional view showing the layer structure of the contact 10 in the manufacturing process of the contact device according to one embodiment.
- the contact 10 includes a first conductive film 12 formed on the surface of the base 11, and a second conductive film 13 and a third conductive film 14 sequentially stacked thereon.
- the first conductive film 12 is formed on the surface of the base 11 made of an insulator or dielectric by a plating method using gold (Au).
- a second conductive film 13 having a film thickness of OO nm or more is formed on the first conductive film 12 by a nickel metal (Ni—Cr) alloy as a single metal containing Ni or an alloy.
- a third conductive film 14 having a thickness of l z m or less is formed on the second conductive film 13 by using a gold palladium (Au_Pd) alloy having a palladium content of 20 atomic% or less.
- Au_Pd gold palladium
- FIG. 2 is a cross-sectional view showing the layer structure of the contact 10 completed through heat treatment.
- the metal or alloy contained in the second conductive film 13 is diffused into the third conductive film 14 as the diffusion metal 16, and eventually on the surface of the third conductive film 14. It reaches and precipitates.
- the heat treatment is performed in an oxygen-containing atmosphere, and the diffusion metal 16 deposited on the surface of the third conductive film 14 is oxidized by touching the oxygen-containing atmosphere. In this way, an oxide 15 of a metal or alloy that diffuses or precipitates is formed on the surface of the third conductive film 14 and in the vicinity of the surface.
- the contact 10 shown in FIG. 1 was heated to 250 ° C. in air or oxygen gas for heat treatment.
- the diffusion metal 16 is oxidized into an oxide 15 in a portion close to the surface of the third conductive film 14. Therefore, the surface layer 17 containing the oxide 15 of the diffusion metal 16 is formed on the surface of the third conductive film 14 and in the vicinity of the surface.
- the film thickness of the third conductive film 14 is determined in consideration of the diffusion coefficient for the diffusion metal 16 so that the diffusion metal 16 reaches the surface of the third conductive film 14 in such heat treatment. Is preferred. Further, since the thickness of the surface layer 17 to be formed is substantially constant regardless of the heating temperature and the film thickness of the third conductive film 14, it can be considered that it depends on the density and diffusion energy of the third conductive film 14. .
- the thickness of the surface layer 17 is preferably 30 nm or less.
- the metal or alloy contained in the second conductive film 13 also diffuses into the first conductive film 12. Therefore, the diffusion coefficient in the first conductive film 12 is lower than the diffusion coefficient in the third conductive film 14. By doing so, it is possible to efficiently diffuse the metal or alloy into the third conductive film 14.
- the heating temperature when the heat treatment is performed so that the metal or the alloy contained in the second conductive film 13 diffuses to the surface of the third conductive film 14 in a state capable of forming an effective oxide It is preferable that the temperature of the material of the second conductive film 13 is lower than the temperature at which the second conductive film 13 is alloyed with the third conductive film 14.
- the heating temperature for the heat treatment is such that the metal or alloy contained in the second conductive film 13 is efficiently diffused into the third conductive film 14, and the material of the second conductive film 13 is the first conductive film 12. It is preferable that the temperature be lower than the temperature for alloying.
- Au gold
- Nikkenore is used as the second conductive film as already mentioned in the examples.
- a combination using a chromium alloy (Ni—Cr) and a gold-palladium alloy (Au—Pd) as the third conductive film 14 can be exemplified, but it is not limited to this.
- FIG. 3 is a graph showing the result of measuring the concentration distribution of the metal element in the depth direction from the surface of the contact 10 after the heat treatment using an Auger spectrometer.
- the vertical axis represents the concentration (at%) of the metal element expressed in a linear scale
- the horizontal axis represents the depth (nm) measured in the film thickness direction from the contact surface, expressed in a linear scale.
- the surface layer 17 which is also the surface of the third conductive film 14 is rich in Ni and oxygen as the diffusion metal 16 in a range up to a depth of about 20 nm, and the oxide 15 of Ni is present. You can see that it is formed. This oxide 15 serves as a barrier and suppresses welding between the contacts as will be described later.
- the thickness of the surface layer 17 including the Ni oxide 15 is as very thin as about 20 nm. Therefore, even in a region where the Ni oxide exists, a portion where a tunnel current flows is included. Presumed to be rare. Further, as shown in FIG. 3, Au contained in the third conductive film 14 is also present on the surface of the contact 10. This shows that the oxide 15 covering the surface of the contact 10 is very thin. Accordingly, when another contact is brought into contact with the surface of the contact 10, the contact resistance between the contacts can be kept low even if the contact pressure is low.
- FIG. 4 is a graph plotting the results of evaluating the contact resistance between the contacts and the occurrence rate of contact sticking for the contact device including the contact 10 manufactured as described above.
- the vertical axis shows the contact resistance expressed on a linear scale on the left side, and the occurrence rate of sticking on the right side.
- the horizontal axis indicates the Pd concentration (at%) in the third conductive film 14 on a linear scale. Fixation As will be described later, when multiple contacts are formed on L wafers and assembled into contact devices, the rate of occurrence of welding is evaluated by the ratio of the number of contact devices where welding has occurred. It was described as “occurrence rate (%)”. Further, for comparison, a contact device including the contact 10 having the layer structure shown in FIG.
- this contact device is provided with an actuator that operates by heating, so that it substantially operates even when the temperature rises during the process. Therefore, the “sticking rate during process (./.)” Is closely related to the occurrence of welding in actual use.
- the contact resistance between the contacts is constant at a low value regardless of the Pd concentration up to about 20 atomic% of the Pd concentration, and tends to increase somewhat beyond this.
- the contact resistance between the contacts varies somewhat depending on the thickness of the surface layer containing Ni oxide.
- FIG. 5 and FIG. 6 are diagrams showing the configuration of a bimorph switch 100 that is a kind of MEMS switch to which the contact device is applied.
- 5 is a plan view
- FIG. 6 is a cross-sectional view taken along the line II in FIG.
- the bimorph switch 100 is a cantilever switch having a cantilever, and includes a substrate 126 made of silicon, a bimorph portion 108, a bimorph support layer 110, a movable contact 102, and a fixed contact 104.
- the configuration of the contact device having the structure shown in FIG.
- the bimorph section 108 corresponds to the cantilever in the bimorph switch 100.
- the bimorph portion 108 includes a low expansion member 106 made of silicon oxide, which is a material having a low thermal expansion coefficient, and a high expansion formed by metallic glass, which is a material having a high thermal expansion coefficient.
- the bimorph section 108 holds the movable contact 102 disposed so as to face the through hole 114 provided in the substrate 126.
- the bimorph support layer 110 is made of silicon oxide formed on the surface of the substrate 126, and supports the bimorph portion 108 on one end side of the bimorph portion 108.
- the fixed contact 104 has one end of the fixed contact 104 fixed to the surface of the substrate 126, and the other end
- the bimorph portion 108 is provided so that the contact portion can be seen through the through hole 114 from the side of the movable contact 102.
- a back surface metal layer 116 is provided on the back surface of the substrate 126.
- the no-morph portion 108 drives the movable contact 102 up and down using the difference in thermal expansion coefficient between the low expansion coefficient member 106 and the high expansion coefficient member 130 by the heating of the heater 128, thereby The movable contact 102 and the fixed contact 104 are electrically connected with each other.
- the bimorph switch 100 can be manufactured as follows. An example of the manufacturing method will be briefly described below.
- the manufacturing method of the nokimorph switch 100 includes a fixed contact forming step, a sacrificial layer forming step, a bimorph portion forming step, a removing step, and a movable contact forming step.
- an Au film, a Ni film or a Ni alloy film, and an AuPd film are sequentially formed from the lower layer on the substrate 126 by using a thin film forming method and a patterning method in the semiconductor device manufacturing method.
- a laminated structure is formed.
- the laminated structure is heat-treated in an oxygen atmosphere, Ni in the Ni film or Ni alloy film is diffused and deposited on the AuPd film surface, and Ni oxide is formed on the AuPd film by reaction with oxygen.
- a fixed contact 104 having a laminated structure of an Au film, a Ni film or a Ni alloy film, an AuPd film, and a Ni oxide in order from the lower layer.
- a sacrificial layer having a silicon oxide film covering the fixed contact 104 is formed. This sacrificial layer will later become the bimorph support layer 110.
- the bimorph portion 108 is formed on the sacrificial layer by using the thin film forming method and the patterning method in the semiconductor device manufacturing method.
- the portion of the substrate 126 that contacts the end of the fixed contact 104 is etched from the back surface to form a through hole 114 that reaches the surface of the substrate 126. Subsequently, a part of the sacrificial layer covering the fixed contact 104 is removed.
- the Au film (first conductive film) and the Ni film or Ni alloy film (second conductive film) are sequentially formed from the lower layer by deposition or the like from the back side of the substrate 126.
- the AuP d film (third conductive film), and a back surface metal layer 116 is formed on the back surface of the substrate 126.
- the movable contact 102 and the fixed contact 104 heat treatment is performed in an atmosphere containing oxygen, and Ni is diffused through the Au Pd film in the formation region of the movable contact 102 and the fixed contact 104.
- Ni is deposited on the surface of the AuPd film, and Ni oxide (surface layer) is formed on the surface of the AuPd film by reaction with oxygen.
- the movable contact 102 is formed on the surface of the high expansion coefficient member 130 facing the through-hole 114 of the substrate 126, and the fixed contact 104 is formed at the position facing the movable contact 102 as described above. Is done.
- the bimorph switch 100 including the contact device according to the embodiment as described above includes the contact device shown in FIG. 2, it is possible to suppress welding between the contacts at the contact with a low contact pressure. The contact resistance between the contacts can be kept low.
- the force using Ni or Ni alloy as the metal material of the second conductive film 13 is not limited to these. If the contact pressure is low, the metal can diffuse in the third conductive film 14 and the oxide can suppress the welding between the contacts.
- the first conductive film 12 is formed by a plating method
- the second conductive film 13 is formed by a sputtering method
- the third conductive film is formed.
- the base body 11 may be omitted if the mechanical strength of the metal corresponding to the first conductive film 12 is sufficient.
- FIG. 7 is a cross-sectional view showing the structure of a microswitch 200 as a contact device according to another embodiment.
- FIG. 8 is a perspective view showing the microswitch 200 shown in FIG. 7 as viewed obliquely from above.
- the microswitch 200 includes a substrate 206 that suspends the movable portion 202 and a wiring substrate 212 that is provided substantially parallel to the substrate 206 and spaced apart from the movable portion 202.
- the substrate 206 has through holes 208 and 210 formed therein.
- the movable portion 202 has one end fixed to the substrate 206 and the other end freely held on the through hole 208, and has a movable contact 226 serving as one contact in the contact device.
- the wiring board 212 includes an electrode pad 214 connected to the movable contact 226 via the lead 204 of the conductive member, a fixed contact 218 as the other contact of the contact device, and a ground electrode disposed around the fixed contact 218. 220.
- a cap substrate 216 is attached so as to close the through holes 208 and 210 on the upper surface of the substrate 206.
- the micro switch 200 operates by being electrically connected to the outside.
- the movable portion 202 includes a bimorph 222 that is an example of an actuator, and a heater 224 that heats the bimorph 222, and the movable contact 226 is disposed at the tip of the bimorph 222.
- the no-morph 222 is formed by laminating a plurality of materials having different thermal expansion coefficients, and specifically includes a SiO layer 228, an A1 layer 230, an SiO layer 232, and an SiO layer 234. Heater 2
- the movable portion 202 can be formed of a piezoelectric material instead of the bimorph 222, or can be formed of an electrostatic electrode driven by an electrostatic force.
- one end of a lead 204 is connected to the movable portion 202.
- the other end of the lead 204 is electrically connected to the electrode pad 214 of the wiring board 212 in the vicinity of the central axis of the through hole 210.
- the lead 204 and the electrode pad 214 may be electrically connected in the vicinity of the central axis of the through hole 210 in the extending direction of the lead 204.
- the lead 204 and the electrode pad 214 are preferably formed of the same conductive member such as Au. Since the lead 204 and the electrode pad 214 are formed of the same conductive member, they are stably connected mechanically and electrically.
- microswitch 200 as described above can be manufactured by a semiconductor process.
- Fig. 9 The manufacturing process of the microswitch 200 will be explained step by step with reference to Fig. 14
- FIG. 9 shows a substrate preparation stage, a movable part formation stage, and a lead formation stage.
- a substrate 206 which is a Si substrate
- a part of the lower surface of the substrate 206 is removed by etching to form a recess 236.
- the material of the bimorph 222 is sequentially laminated on the bottom surface of the concave portion 236 by sputtering or vapor deposition to form the movable portion 202.
- a conductive material is laminated on the surface of the movable portion 202 and the bottom surface of the recess 236 by sputtering or vapor deposition, and leads 204 are formed on the lower surface of the substrate 206.
- FIG. 10 shows a through hole forming step.
- the through hole 208 is formed in the base plate 206 so that one end of the movable portion 202 is fixed to the substrate 206 and the other end is freely held.
- a through-hole 210 is formed in the substrate 206 so that one end of the lead 204 is fixed to the substrate 206 and the other end is freely held.
- a resist layer is formed on the upper surface of the base plate 206, and a part of the substrate 206 is removed from the upper surface of the base plate 206 by dry etching using the resist layer as an etching mask.
- the Si layer 228 that the movable part 202 has in contact with the substrate 206 which is a Si substrate, is etched.
- the through hole 208 excludes the substrate 206, which is a Si substrate, until the Si layer 228 is exposed.
- the through holes 208 and 210 are preferably formed by anisotropic etching, which may be formed by wet etching.
- the substrate 206 is etched from the upper surface corresponding to the back surface of the surface provided with the movable portion 202 to form the through holes 208 and 210.
- the etching amount can be accurately adjusted, and the substrate 206 can be removed with a uniform thickness in the entire region where the through holes 208 and 210 are formed.
- the through holes 208 and 210 can be formed with high dimensional accuracy, the length of the extending part of the movable part 202 to the through hole 208, the length of the extending part of the lead 204 to the through hole 210, and the airtight part That is, the size of the space surrounded by the substrate 206, the wiring substrate 212, and the substrate 216 can be accurately formed.
- FIG. 11 shows a wiring board preparation stage.
- the wiring board 212 includes a ground electrode 220, a fixed contact 218, and an electrode pad 214.
- the wiring substrate 212 is connected to the lower surface of the wiring substrate 212 via the via hole.
- the ground electrode 220, the fixed contact 218, and the electrode pad 214 are connected to the lower surface of the wiring substrate 212.
- a layer structure having the surface layer 17 is formed in the fixed contact 218 which is one contact in the contact device through the process already described with reference to FIGS.
- FIG. 12 shows the fixing stage.
- the substrate 206 and the wiring substrate 212 are fixed so that the lower surface of the substrate 206 and the wiring substrate 212 face each other.
- the wiring substrate 212 is a glass substrate
- the substrate 206 and the wiring substrate 212 can be bonded by anodic bonding.
- a metal film can be formed on the bonding surface of the substrate 206 and the wiring substrate 212, and the substrate 206 and the wiring substrate 212 can be bonded by metal bonding.
- FIG. 13 shows an electrical connection stage.
- the lead 204 mounted on the substrate 206 side is coupled to the electrode pad 214 on the wiring substrate 212.
- the lead 204 is electrically connected to the electrode pad 214 by bending a portion extending in the direction of the through hole 210.
- the tip of the bonding tool 238 can be inserted through the through hole 210 in the direction from the upper surface to the lower surface of the substrate 206, the lead 204 can be bent, and further pressed against the electrode pad 214.
- the bonding tool 238 having substantially the same width as the through hole 210 may be inserted into the through hole 210 and the lead 204 may be pressed against the electrode pad 214.
- a bonding tool 238 having substantially the same cross-sectional shape as the through hole 210 in the in-plane direction of the substrate 206 may be inserted into the through hole 210 and the lead 204 may be pressed against the electrode pad 214.
- the bonding machine 238 is, for example, an ultrasonic wedge, and can be pressed and pressed against the electrode pad 214 while supplying ultrasonic vibration to the lead 204. In this way, by directly pressing and crimping the lead 204 and the electrode node 214, it is possible to reliably connect the lead 204 and the electrode pad 214 electrically.
- FIG. 14 illustrates the sealing phase.
- the board 206 and the board 216 are fixed so as to block the through holes 208 and 210 on the upper surface of the board 206, and the movable part 202 is fixed by the board 206, the wiring board 212, and the board 216. And seal the lead 204.
- the substrate 216 is a glass substrate
- the substrate 206 and the substrate 216 can be bonded by anodic bonding.
- a metal film may be formed on each of the bonding surfaces of the substrate 206 and the substrate 216, and the substrate 206 and the substrate 216 may be bonded by metal bonding.
- the microswitch 200 having the structure shown in FIGS. 7 and 8 is manufactured.
- FIG. 15 to FIG. 19 are diagrams showing the process of industrially manufacturing the microswitch 200 for each stage.
- FIG. 15 shows the entire Si substrate that is to be the wiring substrate 212.
- a plurality of regions 240 each serving as a wiring substrate 212 are collectively formed on a single Si substrate.
- an electrode pad 214, a fixed contact 218, and a ground electrode 220 are formed.
- the heat treatment for the fixed contact 218 is also performed collectively on the entire Si substrate.
- FIG. 16 shows the entire Si substrate that becomes the substrate 206.
- the movable part forming step with reference to FIG. 9 and FIG. Accordingly, the movable portion 202 and the lead 204 shown in FIGS. 7 and 8 are formed in each of the regions 242.
- through holes 208 are formed for each of the plurality of movable parts 202 formed on the substrate 206, and a plurality of through holes 210 are provided for each of the plurality of leads 204. Are formed respectively.
- FIG. 17 shows the entire Si substrate that becomes the substrate 216. As shown in the figure, a plurality of regions 244 forces each forming a substrate 216 that is a part of the micro switch 200 are collectively formed on a single Si substrate.
- FIG. 18 shows a fixing step, a sealing step, and an electrical connection step with respect to the Si substrate shown in FIGS. 15 to 17.
- the fixing step first, the wiring substrate 212 on which the electrode pads 214 are formed and the substrate 206 on which the movable portion 202 and the leads 204 are formed are fixed.
- the bonding tool 238 is inserted into the plurality of through holes 210, and the leads 204 are electrically connected to the plurality of electrode pads 214, respectively.
- FIG. 19 shows the cutting stage.
- the substrate 206, the wiring substrate 212, and the substrate 216 are cut by dicing while the movable part 202 and the lead 204 are sealed, respectively. Chip each of the microswitches 200.
- cutting is performed with water flowing on the surface of the Si substrate in order to prevent the heat from rising due to dicing.
- the microswitch 200 is cut after the sealing stage, the movable part 202 and the lead 204 can be protected from water pressure.
- FIG. 20 is a diagram schematically showing the overall structure of a semiconductor test apparatus 400 having many types of contact devices.
- the semiconductor test apparatus 400 includes a handler 410 that physically operates the semiconductor device under test 450 and a test head that performs a test on the semiconductor device 450 under test sequentially supplied by the handler 410. It includes 420 and a main unit 430 that controls the tests performed on the semiconductor device 450 under test and performs the process of evaluating the test results.
- main device 430 is connected to test head 420 via cable 440 and controls its operation. Further, the test head 420 is electrically coupled to each of the semiconductor devices 450 to be tested supplied from the handler 410 each time, and the test by the main apparatus 430 is executed on the semiconductor devices 450 to be tested. The semiconductor device under test 450 that has been evaluated based on the result of the executed test is again transported by the handler 410, and classified and stored according to the evaluation result.
- test head 420 has different signal sources and includes the switching switch 201, so that the semiconductor device under test can be coupled to different signal sources.
- FIG. 21 is a block diagram schematically showing the structure of a semiconductor test apparatus 401 provided with a switching switch 201 and a probe pin 310 as a contact device.
- the test head 420 of this semiconductor test apparatus 401 has a plurality of test functions including a logic signal generator 422 and an RF signal generator 424, and a desired signal is displayed by the switching switch 201. Can be connected to the semiconductor device under test 450.
- the signal path connection to the semiconductor device 450 to be tested is formed via the probe pin 310. That is, the test head 420 and the device under test 450 are electrically connected by bringing the tip 312 of the probe pin 310 into contact with the pad 452 of the device under test 450 placed on the probe stage 426 by the handler 410. Connected to. Furthermore, by operating the switching switch 201, the probe pin 310 can selectively transmit the logic signal generator 422 or the RF signal generator 424 to the semiconductor device 450 to be tested to perform a desired test operation.
- each element is drawn one by one.
- an actual semiconductor test apparatus 401 has a large number of probe pins 310 and switching switches 201 corresponding to a large number of pads 452 formed on a semiconductor device 450 to be tested. Many implemented. Accordingly, it is desirable that each switching switch 201 and probe pin 310 be small in size, and it is also preferable that the switching switch 201 has a small operating power. From such a viewpoint, the microswitch 200 having a minute structure as shown in FIG. 7 can be suitably used as the switching switch 201.
- the probe pin 310 is also required to transmit the test signal to the semiconductor device 450 to be tested without degrading the test signal. Also, the probe pin 310 repeats contact and separation with the pad 452 each time the semiconductor device under test 450 is replaced. Therefore, each probe pin 310 is also required to have high contact resistance and high durability against sticking.
- the switching switch 201 having the contact structure shown in FIG. 2 can be preferably used for such viewpoint power.
- FIG. 22 is a diagram schematically showing the shape and structure of such a probe pin 310.
- the probe pin 310 is in contact with the pad 452 of the semiconductor device to be tested, and has a tapered tip 312 that forms an electrical connection between the test head 420 and the semiconductor device.
- a cylindrical main body portion 314 that mediates electrical connection with the internal circuit of the test head 420 is provided.
- the tip 312 of the probe pin 310 abuts against the pad 452 of the semiconductor device 450 under test to form a temporary electrical connection under test. In this case, it is impossible to apply such a large pressure as to damage the semiconductor device.
- the probe pin 310 and the pad are used. Even between 452, good electrical characteristics comparable to soldering or bonding are required. Therefore, it is preferable to form the layer structure shown in FIG. 2 including the second conductive film 13 and the third conductive film 14 at the tip 312 of the probe pin 310 that contacts the pad 452 of the semiconductor device. Further, a surface layer 17 containing a metal or alloy oxide of the second conductive film 13 is formed on the tip surface of the tip portion 312 of the probe pin 310 by the heat treatment. As a result, good electrical connection between the probe pin 310 and the pad 452 and prevention of welding of the probe pin 310 to the pad 452 can be realized at the same time.
- FIG. 23 is a block diagram schematically showing the structure of a semiconductor test apparatus 402 provided with a switching switch 201 and a probe pin 320 as a contact device.
- the test head 420 of this semiconductor test apparatus 402 also has a plurality of test functions including a logic signal generator 422 and an RF signal generator 424, and a desired signal is displayed by the switching switch 201. Can be connected to the semiconductor device 450 under test.
- the signal path connection to the semiconductor device 450 to be tested is formed via the probe pin 320. That is, a plurality of probe pins 320 are mounted on the upper surface of the probe board 328. The pad 452 of the semiconductor device under test 450 held by the pusher 428 is brought into contact with the probe pin 320 from above, and an electrical connection between the test head 420 and the semiconductor device under test 450 is formed. Further, by operating the switching switch 201, the probe pin 320 can selectively transmit the logic signal generator 422 or the RF signal generator 424 to the semiconductor device under test 450 to perform a desired test operation.
- a large number of probe pins 320 and switching switches 201 are mounted corresponding to a large number of pads 452 formed on the semiconductor device 450 to be tested.
- Such a probe substrate 328 having a large number of probe pins 320 is made of a probe. It is called a lobe card or the like, and is used by being fixed to a performance board (not shown) of the semiconductor test apparatus 402.
- the tip 322 of the probe pin 320 is pressed against the pad 452 by the elasticity of the probe pin 320 itself. Therefore, by raising the semiconductor device under test 450 through the pusher 428, the electrical connection to the semiconductor device under test 450 is cut off and can be easily replaced with the next semiconductor device under test 450.
- the probe pin 320 repeats contact and separation with the node 452 each time the semiconductor device 450 under test is replaced.
- the probe pin 320 is also required to transmit the test signal to the semiconductor device 450 under test without degrading it. Therefore, each probe pin 320 is also required to have high durability against sticking with low contact resistance.
- FIG. 24 is a diagram schematically showing the shape and structure of such a probe pin 320. As shown in the figure, one end of the probe pin 320 is attached to the probe substrate 326 by an adhesive 326. The other end of the thin and long main body 324 forms a flat tip 322 that contacts the pad 452 of the semiconductor device 450 to be tested as the tip 322 of the probe pin 320.
- the tip portion 322 has the layer structure shown in FIG. 2 including the second conductive film 13 and the third conductive film.
- a surface layer 17 containing a metal or alloy oxide of the second conductive film 13 is formed on the tip surface of the tip end portion 322 of the probe pin 320.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Manufacture Of Switches (AREA)
- Contacts (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007554990A JP4691112B2 (ja) | 2006-01-19 | 2007-01-19 | 接点装置およびその製造方法 |
DE112007000210T DE112007000210T5 (de) | 2006-01-19 | 2007-01-19 | Kontaktvorrichtung und Verfahren zur Herstellung derselben |
US12/174,645 US7800386B2 (en) | 2006-01-19 | 2008-07-17 | Contact device and method for producing the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2006-011028 | 2006-01-19 | ||
JP2006011028 | 2006-01-19 | ||
JP2006-208841 | 2006-07-31 | ||
JP2006208841 | 2006-07-31 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/174,645 Continuation US7800386B2 (en) | 2006-01-19 | 2008-07-17 | Contact device and method for producing the same |
Publications (1)
Publication Number | Publication Date |
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WO2007083769A1 true WO2007083769A1 (ja) | 2007-07-26 |
Family
ID=38287720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2007/050838 WO2007083769A1 (ja) | 2006-01-19 | 2007-01-19 | 接点装置およびその製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7800386B2 (ja) |
JP (1) | JP4691112B2 (ja) |
DE (1) | DE112007000210T5 (ja) |
WO (1) | WO2007083769A1 (ja) |
Cited By (8)
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JP2011249182A (ja) * | 2010-05-28 | 2011-12-08 | Advantest Corp | スイッチ装置、試験装置、スイッチ方法、および製造方法 |
JP4874419B1 (ja) * | 2010-12-03 | 2012-02-15 | 株式会社アドバンテスト | スイッチ装置および試験装置 |
JP2012146592A (ja) * | 2011-01-14 | 2012-08-02 | Advantest Corp | スイッチ装置および試験装置 |
JP2012243389A (ja) * | 2011-05-13 | 2012-12-10 | Advantest Corp | スイッチ装置、伝送路切り替え装置、製造方法、および試験装置 |
JP2013026195A (ja) * | 2011-07-26 | 2013-02-04 | Advantest Corp | スイッチ装置、スイッチ装置の製造方法、伝送路切替装置、および試験装置 |
JP2013026194A (ja) * | 2011-07-26 | 2013-02-04 | Advantest Corp | スイッチ装置、伝送路切替装置、および試験装置 |
JP2013030273A (ja) * | 2011-07-26 | 2013-02-07 | Advantest Corp | スイッチ装置 |
WO2017033235A1 (ja) * | 2015-08-21 | 2017-03-02 | 株式会社アドバンテスト | 接点装置および製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI437243B (zh) * | 2010-12-30 | 2014-05-11 | Test Research Inc | 電性連接缺陷模擬測試方法及其系統 |
WO2017091591A1 (en) * | 2015-11-25 | 2017-06-01 | Formfactor, Inc. | Floating nest for a test socket |
CN109037475B (zh) * | 2018-07-25 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种基板、显示面板和显示设备 |
DE102022200489A1 (de) | 2022-01-18 | 2023-07-20 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanischer Inertialsensor |
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JP2001091544A (ja) * | 1999-09-27 | 2001-04-06 | Hitachi Ltd | 半導体検査装置の製造方法 |
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JP4191942B2 (ja) | 2002-03-25 | 2008-12-03 | 株式会社アドバンテスト | スイッチ及びアクチュエータ |
JP2004055410A (ja) | 2002-07-22 | 2004-02-19 | Advantest Corp | バイモルフスイッチ、バイモルフスイッチ製造方法、電子回路、及び電子回路製造方法 |
JP4529558B2 (ja) | 2004-06-25 | 2010-08-25 | 富士ゼロックス株式会社 | 画像形成装置およびその色ずれ制御方法 |
JP4713170B2 (ja) | 2005-01-28 | 2011-06-29 | 日立プラズマディスプレイ株式会社 | プラズマディスプレイ装置及びその駆動方法 |
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2007
- 2007-01-19 WO PCT/JP2007/050838 patent/WO2007083769A1/ja active Application Filing
- 2007-01-19 DE DE112007000210T patent/DE112007000210T5/de not_active Withdrawn
- 2007-01-19 JP JP2007554990A patent/JP4691112B2/ja active Active
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- 2008-07-17 US US12/174,645 patent/US7800386B2/en active Active
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JPS61288384A (ja) * | 1985-06-17 | 1986-12-18 | 矢崎総業株式会社 | 電気用接点 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011249182A (ja) * | 2010-05-28 | 2011-12-08 | Advantest Corp | スイッチ装置、試験装置、スイッチ方法、および製造方法 |
JP4874419B1 (ja) * | 2010-12-03 | 2012-02-15 | 株式会社アドバンテスト | スイッチ装置および試験装置 |
US8779751B2 (en) | 2010-12-03 | 2014-07-15 | Advantest Corporation | Switching apparatus and test apparatus |
JP2012146592A (ja) * | 2011-01-14 | 2012-08-02 | Advantest Corp | スイッチ装置および試験装置 |
JP2012243389A (ja) * | 2011-05-13 | 2012-12-10 | Advantest Corp | スイッチ装置、伝送路切り替え装置、製造方法、および試験装置 |
JP2013026195A (ja) * | 2011-07-26 | 2013-02-04 | Advantest Corp | スイッチ装置、スイッチ装置の製造方法、伝送路切替装置、および試験装置 |
JP2013026194A (ja) * | 2011-07-26 | 2013-02-04 | Advantest Corp | スイッチ装置、伝送路切替装置、および試験装置 |
JP2013030273A (ja) * | 2011-07-26 | 2013-02-07 | Advantest Corp | スイッチ装置 |
US8872524B2 (en) | 2011-07-26 | 2014-10-28 | Advantest Corporation | Switching apparatus, switching apparatus manufacturing method, transmission line switching apparatus, and test apparatus |
WO2017033235A1 (ja) * | 2015-08-21 | 2017-03-02 | 株式会社アドバンテスト | 接点装置および製造方法 |
JPWO2017033235A1 (ja) * | 2015-08-21 | 2018-05-10 | 株式会社アドバンテスト | 接点装置および製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090184728A1 (en) | 2009-07-23 |
US7800386B2 (en) | 2010-09-21 |
JPWO2007083769A1 (ja) | 2009-06-11 |
JP4691112B2 (ja) | 2011-06-01 |
DE112007000210T5 (de) | 2008-11-06 |
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