WO2006003961A1 - 蛍光体と発光器具 - Google Patents
蛍光体と発光器具 Download PDFInfo
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- WO2006003961A1 WO2006003961A1 PCT/JP2005/012015 JP2005012015W WO2006003961A1 WO 2006003961 A1 WO2006003961 A1 WO 2006003961A1 JP 2005012015 W JP2005012015 W JP 2005012015W WO 2006003961 A1 WO2006003961 A1 WO 2006003961A1
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- 239000000126 substance Substances 0.000 title claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 81
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 12
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims abstract description 7
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 6
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 5
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 5
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 5
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 5
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 5
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 5
- 230000003213 activating effect Effects 0.000 claims abstract description 5
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 5
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 200
- 239000013078 crystal Substances 0.000 claims description 64
- 230000005284 excitation Effects 0.000 claims description 32
- 150000004767 nitrides Chemical class 0.000 claims description 23
- 150000002484 inorganic compounds Chemical class 0.000 claims description 17
- 229910010272 inorganic material Inorganic materials 0.000 claims description 17
- 238000002156 mixing Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000012190 activator Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 5
- 238000009877 rendering Methods 0.000 abstract description 5
- 229910052732 germanium Inorganic materials 0.000 abstract description 3
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- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 39
- 239000011575 calcium Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 15
- 238000000295 emission spectrum Methods 0.000 description 12
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- 238000013461 design Methods 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
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- PSBUJOCDKOWAGJ-UHFFFAOYSA-N azanylidyneeuropium Chemical compound [Eu]#N PSBUJOCDKOWAGJ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
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- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
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- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
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- 230000001678 irradiating effect Effects 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
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- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 101001012040 Pseudomonas aeruginosa (strain ATCC 15692 / DSM 22644 / CIP 104116 / JCM 14847 / LMG 12228 / 1C / PRS 101 / PAO1) Immunomodulating metalloprotease Proteins 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
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- SQVRNKJHWKZAKO-UHFFFAOYSA-N beta-N-Acetyl-D-neuraminic acid Natural products CC(=O)NC1C(O)CC(O)(C(O)=O)OC1C(O)C(O)CO SQVRNKJHWKZAKO-UHFFFAOYSA-N 0.000 description 1
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- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
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- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SQVRNKJHWKZAKO-OQPLDHBCSA-N sialic acid Chemical compound CC(=O)N[C@@H]1[C@@H](O)C[C@@](O)(C(O)=O)OC1[C@H](O)[C@H](O)CO SQVRNKJHWKZAKO-OQPLDHBCSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
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- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/6268—Thermal treatment of powders or mixtures thereof other than sintering characterised by the applied pressure or type of atmosphere, e.g. in vacuum, hydrogen or a specific oxygen pressure
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- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
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- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3865—Aluminium nitrides
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
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- H—ELECTRICITY
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L33/50—Wavelength conversion elements
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- H01L33/502—Wavelength conversion materials
Definitions
- the present invention relates to a phosphor mainly composed of an inorganic compound and its use. More specifically, the application relates to a lighting apparatus and a light-emitting apparatus for an image display device using the property of the phosphor, that is, the characteristic of emitting fluorescence having a long wavelength of 570 nm or more.
- Phosphors are used in fluorescent display tubes (VFD), field emission displays (FED), plasma display panels (PDP), cathode ray tubes (CRT), white light emitting diodes (LED), etc.
- VFD fluorescent display tubes
- FED field emission displays
- PDP plasma display panels
- CRT cathode ray tubes
- LED white light emitting diodes
- the phosphor can be vacuum ultraviolet rays, ultraviolet rays, electron beams, blue light, etc. It is excited by an excitation source with high energy and emits visible light.
- the phosphor has a problem that the luminance of the phosphor is lowered as a result of being exposed to the excitation source as described above, and there is a demand for a phosphor that does not have a luminance reduction.
- sialon phosphors have been proposed as phosphors with little reduction in luminance, instead of phosphors such as conventional silicate phosphors, phosphate phosphors, aluminate phosphors, and sulfide phosphors.
- This sialon phosphor is manufactured by a manufacturing process generally described below.
- nitride Kei element S i 3 N 4
- nitride Arumyeumu A 1 N
- carbonate Karushiu arm C a C_ ⁇ 3
- europium oxide E u 2 ⁇ 3
- Patent Document 3 describes MS i 3 N 5 , M 2 Si 4 N and M 4 Si 6 NM 9 Si nN 23 , M, 6 S i 15 ⁇ 6 N 32 , M 13 S i 18 A l 12 ⁇ 18 N 36 , MS i 5 A 1 2 ON ⁇ Mg S i sA l ON (where M is Ba, C a, S r, or rare earth elements) are known as phosphors that are activated by Eu or Ce, and some of these phosphors emit red light. The body has also been reported. Also, LED lighting units using these phosphors are known. Furthermore, Japanese Patent Application Laid-Open No.
- Patent Document 4 describes S r 2 S i 5 N 8 and S r S i 7 N i. A phosphor with Ce activated in the crystal has been reported. JP-A-2003-3-3 2 1 6 7 5 (Patent Document 5)
- Patent Document 7 describes a wide range of combinations relating to L-M-N: Eu, Z system. The effect of improving the light emission characteristics is not shown.
- the phosphors represented by Patent Documents 2 to 7 described above are based on nitrides of divalent and tetravalent elements, and phosphors based on various different crystal phases have been reported. It is also known that it emits red light, but the red luminance is not sufficient when excited with blue visible light. Also, depending on the composition, it was chemically unstable and had a problem with durability.
- a white light-emitting diode using a combination of a blue light-emitting diode element and a blue-absorbing yellow light-emitting phosphor is known and has been put into practical use for various lighting applications.
- Japanese Patent No. 2900 028 “Light Emitting Diode” Patent Document 8
- Japanese Patent No. 2 9 2 7 2 79 Patent Document 9
- Patent No. 3 3 6 4 2 2 9 Patent Document 10
- Wavelength conversion casting material, method for producing the same, and light emitting device are exemplified.
- a particularly popular phosphor is a cerium represented by the general formula (Y, G d) 3 (A l, G a) 5 0 1 2 : C e. 3 + . It is an activated yttrium / aluminum / garnet phosphor.
- white light-emitting diodes composed of blue light-emitting diode elements and yttrium / aluminum / garnet phosphors are characterized by pale blue light emission due to the lack of red components, and there is a bias in color rendering. There was a problem.
- a white light emitting diode was investigated in which the red component that is lacking in the yttrium, aluminum, and garnet phosphors is supplemented with another red phosphor by mixing and dispersing the two phosphors.
- Examples of such a light emitting diode include a “white light emitting element” described in Japanese Patent Laid-Open No. Hei 10-1 6 3 5 3 5 (Patent Document 1 1), Examples include the “nitride phosphor and its manufacturing method” described in the literature 5).
- Patent Document 1 1 1 1 1 1 examples include the “nitride phosphor and its manufacturing method” described in the literature 5).
- the color rendering is not sufficient, and there still remains a problem to be improved, and a light emitting diode having no problem has been demanded.
- the red phosphor described in JP-A-10-1 6 3 5 3 5 contains force dome and has a problem of environmental pollution.
- the red light-emitting phosphor described in Japanese Patent Application Laid-Open No. 2003- 3 2 1 6 7 5 typically represented by Ca ⁇ gySisNs: EuO.03, contains only cadmium. However, since the brightness of the phosphor is low, further improvement in the emission intensity has been desired. References;
- Non-Patent Document 1 H. A. H o p p [4 forces "J o u r n a l o f P h y s i c s a n a and he m i s t r y o f S o i ld s" 2 0 0 0 years, v o l. 6 1, p. 2 0 0 1 to 2 0 0 6
- Non-Patent Document 2 “0 n n e w r a r e— e a r t h d o p e d M—S i — A 1 — O— N th m th 22nd a t e r i a l s” J. W. H. v a n K r e v e l o
- Patent Document 2 US Patent No. 6 6 8 2 68 7995 6 3
- Patent Document 3 Japanese Patent Laid-Open No. 2 0 0 3-2 0 6 No. 4 83 8 1
- Patent Document 4 Japanese Patent Laid-Open No. 2 0 0 2-3 2 24 675
- Patent Document 5 Japanese Patent Laid-Open No. 2 0 3-3 2 1 6 7 No. 5
- Patent Document 6 3-2 7 7 74 6
- Patent Document 7
- Patent Document 8
- Patent Document 9
- Patent Document 1 0
- Patent Literature 1 1 Disclosure of the invention
- the present invention is intended to meet such demands, and one of the purposes is to emit light in orange or red having a longer wavelength than conventional rare earth activated sialon phosphors, have high brightness, and is chemically stable.
- An object is to provide an inorganic phosphor.
- another object of the present invention is to provide a lighting apparatus having excellent color rendering properties and a light emitting apparatus for an image display device having excellent durability using such a phosphor.
- the present inventors use a trivalent E element such as A 1 in addition to a divalent A element such as Ca and a tetravalent D element such as Si.
- a trivalent E element such as A 1
- a divalent A element such as Ca
- a tetravalent D element such as Si.
- M element that becomes a luminescent ion (where M is Mn, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, One or more elements selected from L u), a divalent A element (where A is one or more elements selected from Mg, Ca, Sr, Ba), and Tetravalent D element (where D is one or more elements selected from Si, Ge, and Sn) and trivalent E element (where E is B, A l, G a Inorganic mainly composed of nitrides and oxynitrides containing one or more elements selected from In), nitrogen, oxygen as necessary, and other X elements as necessary
- the crystalline phase of a specific composition becomes a phosphor that emits orange light having a wavelength of 570 nm or more and red light having a wavelength of 60 nm or more.
- Non-Patent Document 2 C a ⁇ E i ⁇ . ⁇ S i gAl sN 16 is a novel phosphor based on a crystal having a composition and crystal structure completely different from that of sialon. Furthermore, unlike the crystal containing about several hundred ppm of A 1 described in Patent Document 5, a phosphor whose parent is a crystal in which a trivalent element represented by A 1 is the main constituent element of the parent crystal. is there.
- a phosphor in which Mn or a rare earth element is activated as an emission center element M on an inorganic base crystal changes in emission color and brightness depending on the electronic state around the M element.
- phosphors with bivalent Eu as the emission center have been reported to emit blue, green, yellow, and red by changing the host crystal.
- changing the atomic position in the host crystal structure or the crystal structure into which M is incorporated changes the emission color and brightness completely, and is regarded as a different phosphor.
- a bivalent, trivalent, tetravalent, and multivalent nitride which is different from the conventional ternary nitride of divalent and tetravalent elements, is used as a base crystal, and the sialon group reported heretofore has been reported.
- a crystal completely different from the parent is used as a base material, and a phosphor having such a crystal as a base has not been reported so far.
- the phosphor having the composition of the present invention as a host exhibits red light emission with higher luminance than that of a conventional crystal as a host.
- the present inventor provides a phosphor exhibiting a high-luminance light emission phenomenon in a specific wavelength region by adopting the configuration described in (1) to (19) below. Succeeded. Furthermore, by using this phosphor and adopting the configuration described in (20) to (27), we have succeeded in providing a lighting apparatus and an image display device having excellent characteristics. That is, the configuration of the present invention is as described in 1-27 below. Activating element M, Divalent element A, Trivalent element E, Tetravalent element D,
- a phosphor comprising an inorganic compound having a composition satisfying all the conditions of 0 ⁇ g ⁇ 0.2 (vi).
- the activator element M is selected from Mn, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu
- divalent element A is selected from Mg, Ca, S'r, Ba
- tetravalent element D is S i
- trivalent element E is one or more elements selected from B, A l, Ga and In 6.
- the phosphor according to any one of items 1 to 5.
- the element M is Eu
- the element A is Ca or a mixed composition of Ca and Sr
- the element D is Si
- the element E is A1, 1 Item 8.
- the phosphor according to any one of items 7 to 7.
- the inorganic compound is a C a A 1 Si N 3 crystal in which M is dissolved or a (C a, S r) A 1 Si N 3 crystal in which M is dissolved, 1 Item 9.
- the phosphor according to any one of items 1 to 8.
- Item 10 Any one of Items 1 to 9, wherein the inorganic compound is a single crystal particle or an aggregate of single crystals having an average particle size of 0.1 ⁇ m or more and 20 m or less.
- Phosphor comprising 5% by mass or more of a phosphor composed of the inorganic compound according to any one of items 1 to 1, and a balance with another crystal phase or an amorphous phase. .
- the other crystalline phase or amorphous phase is C a S i N 2 , C a 2 S i 5 N 8 , or a part of C a is replaced by S r C a S i N 2 , C a 2 11.
- the conductive inorganic substance is an oxide, oxynitride, or nitride containing one or more elements selected from Zn, Al, Ga, In, and Sn. 15.
- a lighting fixture comprising a light emission source and a phosphor, wherein the phosphor described in any one of items 1 to 19 is used as the phosphor.
- the LED that emits light having a wavelength of 3 30 to 4 20 nm, and the phosphor described in any one of 1 to 19 as the phosphor.
- the lighting fixture as described in a term.
- the luminescence source is an LED that emits light having a wavelength of 420 to 500 nm, and the phosphor according to any one of 1 to 19; and the phosphor of 420 to 500 nm Excitation light As described in paragraphs 20 or 21, characterized in that white light is emitted by using a green phosphor having an emission peak at a wavelength of 5 ° 0 nm to 570 nm. lighting equipment.
- Item 20 or 21 is characterized in that it emits white light by using a yellow phosphor having an emission peak at a wavelength of 550 nm or more and 600 nm or less by light. lighting equipment.
- An image display device comprising an excitation source and a phosphor, wherein the phosphor according to any one of items 1 to 19 is used as the phosphor.
- the image display device is any one of a fluorescent display tube (VFD), a field emission display (FED), a plasma display panel (PDP), and a cathode ray tube (CRT).
- VFD fluorescent display tube
- FED field emission display
- PDP plasma display panel
- CRT cathode ray tube
- the phosphor of the present invention contains a multi-element nitride or multi-element oxynitride containing a divalent element, a trivalent element, and a tetravalent element as a main component. It emits light at a wavelength higher than that of phosphors, and is excellent as an orange or red phosphor. Even when exposed to an excitation source, this phosphor provides a useful phosphor that is suitably used for VFD, FED, PDP, CRT, white LED, and the like, without a decrease in luminance.
- Fig. 1 Triangular display showing the range of values of parameters b, c, d in composition formula M A A B DE D NO f X ⁇ .
- FIG. 2 is a diagram showing an X-ray diffraction chart of the phosphor (Example 1).
- Fig. 3 shows the emission and excitation spectra of the phosphor (Example 1).
- FIG. 4 is a diagram showing an X-ray diffraction chart of the phosphor (Example 2).
- Fig. 5 shows the emission and excitation spectra of the phosphor (Example 2).
- Fig. 6 Schematic of a lighting fixture (LED lighting fixture) according to the present invention.
- FIG. 7 Schematic diagram of an image display device (plasma display panel) according to the present invention. Explanation of symbols
- the phosphor of the present invention comprises at least the activating element M, the divalent element A, the tetravalent element D, the trivalent element E, nitrogen, oxygen as required, and optionally It is a composition containing other element X.
- Typical constituent elements include M, Mn, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
- One or more elements selected, A is one or more elements selected from Mg, Ca, Sr, Ba, D is Si, Ge, Sn
- One or two or more elements selected, E may be one or more elements selected from B, A1, Ga, and In. With these constituent elements, a phosphor exhibiting light emission in the red region can be obtained. Its composition represented by a composition formula M a A b D c E d N e O f X g.
- the a value represents the amount of addition of the element M, which is the luminescent center, and is preferably set to be not less than 0.0 0 0 0 1 and not more than 0.15. If the a value is less than 0.0 0 0 0 1, the emission brightness decreases because the number of M as the emission center is small. If the a value is greater than 0.15, the brightness decreases due to concentration quenching due to interference between M ions.
- Eu is used as the element M, a value of 0.0 0 0 1 or more and 0.0 2 or less can be obtained, and a phosphor having particularly high luminance can be obtained.
- b value is the content of divalent element A such as C a
- c value is the content of tetravalent element D such as S i
- d value is the content of trivalent element E such as A 1 B
- c d parameters have a great influence on the optical properties.
- a range of values can be selected. This is shown in the triangular graph display shown in Figure 1, point A (0. 3 9 6, 0. 0 1, 0. 5 9 4), 0 (0. 9 8, 0. 0 1, 0. 0 1), £ (0. 3 9 6, 0. 5 9 4, 0. 0 1) This is the value of the point on or inside the triangle line.
- a 1 is used as the E element, absorption of visible light from 530 nm to 570 nm is absorbed in a composition range that satisfies all of these conditions. Less selectively absorbs ultraviolet light and blue light.
- the e value is the nitrogen content
- the f value is the oxygen content
- the value of e + f is the value of e + f
- the range is good.
- the range is good. If the e and f values are outside this range, the light emission luminance will decrease.
- the g value is the content of the element X other than the activation element M, the divalent element A, the trivalent element E, the tetravalent element D, nitrogen, and oxygen.
- Element X includes monovalent metal elements such as Li and Na, pentavalent or higher metal elements such as V and W, impurity elements in the raw material, fluorine contained in the flux for grain growth, etc. Can do.
- Element X is a range that does not degrade the optical properties of the phosphor.
- those with high emission luminance include at least Eu in M element, Ca or Ca and Sr in A element, Si in D element, and E element. It contains A 1 and N in the X element.
- the inorganic compound is a C a A 1 Si N 3 crystal in which M is dissolved, or a (C a, S r) A 1 Si N 3 crystal in which M is dissolved. Is a particularly bright phosphor.
- a crystal in which a part of C a is substituted with S r (C a, S r) A 1 S i N 3 crystal and its solid solution is a composition of this range and C a A 1 S i It becomes a phosphor that emits light with a shorter wavelength than that based on N 3 crystals.
- the average particle size is preferably 0.1 ⁇ m or more and 20 ⁇ m or less from the viewpoint of dispersibility in resin and fluidity of the powder. Further, by making the powder into a single crystal particle in this range, the emission luminance is further improved.
- the inorganic compound In order to obtain a phosphor with high emission luminance, it is preferable that impurities contained in the inorganic compound be as small as possible. In particular, when a large amount of Fe, Co, or Ni impurity elements is contained, light emission is inhibited. Therefore, selection of raw material powder and control of the synthesis process should be performed so that the total of these elements is 500 ppm or less. It is good to do.
- the composition of Ma A b Dc E d N e O f X g which is a component of the nitride, is highly pure and contains as much as possible, preferably composed of a single phase.
- M a A b D e E d N e O content of f X g composition it is desirable to be 5 mass% or more to obtain a high luminance. More preferably, the luminance is remarkably improved at 50% by mass or more.
- Aru in M a A b D e E d N e O f X g at least the content of the composition 5 wt% or more.
- the content of the E d N e O ⁇ X g composition subjected to X-ray diffraction can be obtained by multi-phase analysis of the Li one safety belt method is simple, X-ray diffraction results with, it is possible to obtain content from the ratio of M a a b D c E d N e O f X g composition crystals and the strongest of the other crystal height.
- the composition in a system comprising A 1 a mixture of polytype crystal of M a A b D c E d N e O f X g composition crystals and A 1 N or A 1 N be able to.
- C a A 1 Si N 3 crystal, or a mixture of (C a, S r) A 1 Si N 3 crystal and A 1 N or A 1 N polytype crystal is high brightness and chemical It also has stability.
- the composition in a system comprising a S i, M a A b D e E d N e O f X g composition crystals and / 3 _ S i 3 N 4 , one sialon or ⁇ - sialon, And a mixture of In particular, C a A 1 S i ⁇ 3 crystal, or (C a, S r) A 1 S i N 3 crystal and 3-S
- conductivity can be imparted to the phosphor by mixing an inorganic substance having conductivity.
- the inorganic substance having conductivity include oxides, oxynitrides, or nitrides containing one or more elements selected from Zn, Al, Ga, In, and Sn, or these Can be mentioned.
- the phosphor of the present invention develops red, but if it is necessary to mix with other colors such as yellow, green, and blue, inorganic phosphors that develop these colors can be mixed as necessary. .
- the phosphor of the present invention has a different excitation spectrum and fluorescence spectrum depending on the composition, and can be set to have various emission spectra by appropriately selecting and combining them.
- the mode may be set to the spectrum required based on the application.
- a composition in which the M element is Eu, the A element is Ca or a mixed composition of C a and Sr, the D element is Si, and the E element is A 1 is 2 0 0
- the phosphor of the present invention which exhibits emission characteristics as described above, has a broad excitation range from electron beams, X-rays, and ultraviolet to visible light compared to ordinary oxide phosphors and existing sialon phosphors. In particular, it emits orange or red light of 5700 nm or more, especially in a specific composition, it exhibits red color from 60 nm to 70 nm, and is on the CIE chromaticity coordinates. The value of (x, y) indicates red light emission in the range of 0.45 ⁇ x ⁇ 0.7. Due to the above light emission characteristics, it is suitable for lighting equipment and image display devices.
- the phosphor of the present invention does not define a production method, but a phosphor having high luminance can be produced by the following method.
- a mixture of metal compounds which is fired to form a raw material mixture that can constitute a composition represented by M, A, D, E, N, 0, X in an inert atmosphere containing nitrogen.
- a high-luminance phosphor can be obtained by firing in the temperature range of 0 ° C or higher and 2200 ° C or lower.
- the bulk density is the volume filling rate of the powder.
- a boron nitride sintered body is suitable because of its low reactivity with metal compounds. Firing with the bulk density kept at 40% or less is because the reaction product grows in a free space when the material powder is baked in a free space around the raw material powder. This is because crystals with few surface defects can be synthesized because of less contact.
- a phosphor is synthesized by firing the obtained mixture of metal compounds in a nitrogen-containing inert atmosphere at a temperature range of not less than 1200 ° C and not more than 2200 ° C.
- the furnace used for firing is a metal resistance heating resistance heating system or a graphite resistance heating system because the firing temperature is a high temperature and the firing atmosphere is an inert atmosphere containing nitrogen, and carbon is used as the material for the high temperature part of the furnace.
- An electric furnace using is suitable.
- a sintering method in which mechanical pressure is not applied from the outside such as an atmospheric pressure sintering method or a gas pressure sintering method, is preferable because firing is performed while maintaining a high bulk density.
- the powder aggregate obtained by firing is firmly fixed, it is pulverized with a pulverizer commonly used in factories such as a ball mill and a jet mill. Grind until the average particle size is 20 ⁇ m or less.
- the average particle size is 0.1 111 or more and 5 111 or less.
- the average particle size exceeds 20 ⁇ m, the fluidity of the powder and the dispersibility in the resin are deteriorated, and when the light emitting device is formed in combination with the light emitting element, the light emission intensity becomes uneven depending on the part.
- the thickness is 0.1 ⁇ m or less, the amount of defects on the phosphor powder surface increases, and the emission intensity decreases depending on the phosphor composition.
- the phosphor of the present invention has higher luminance than the conventional sialon phosphor, and since the luminance of the phosphor is less decreased when exposed to an excitation source, VF D, F ED, PD This phosphor is suitable for P, CRT, white LED, etc.
- the luminaire of the present invention is configured using at least a light emitting light source and the phosphor of the present invention. Examples of lighting fixtures include LED lighting fixtures and fluorescent lamps. In the LED illuminator, the phosphor of the present invention is used and disclosed in Japanese Patent Application Laid-Open Nos. 5-1525609, 7-9993-5, and Japanese Patent No. 2 9 2 7 2 9 It can be produced by known methods as described.
- the light source emits light having a wavelength of 3 30 to 500 nm, and in particular, an ultraviolet (or purple) LED light emitting element of 3 3 0 to 4 20 nm or 4 2 0 to 5 0 A 0 nm blue LED light emitting element is preferred.
- Some of these light emitting elements are made of nitride semiconductors such as Gan and InGaN, and can be light emitting light sources that emit light of a predetermined wavelength by adjusting the composition.
- a lighting fixture that emits a desired color can be configured by using it together with a phosphor having other light emission characteristics.
- an ultraviolet LED light emitting device with a wavelength of 3 30 to 4 20 nm, a blue phosphor excited at this wavelength and having an emission peak at a wavelength of 4 20 nm or more and 4 80 nm or less, and 500 nm
- a green phosphor having an emission peak at a wavelength of 550 nm or less
- B is a green phosphor AMG A l 10 ⁇ 1 7: E u
- the Mn can ani gel.
- C a -a one sialon in which Eu is dissolved has a high emission luminance.
- the blue light emitted by the LED is irradiated to the phosphor, two colors of red and yellow light are emitted, and these are mixed with the blue light of the LED itself to produce a white or reddish light bulb color. It becomes a lighting fixture.
- a blue LED light emitting element having a wavelength of 420 nm to 500 nm, a green phosphor excited at this wavelength and having an emission peak at a wavelength of not less than 500 nm and not more than 57 nm, and the present invention
- phosphors there are combinations with phosphors.
- the image display device of the present invention comprises at least an excitation source and the phosphor of the present invention, such as a fluorescent display tube (VFD), a field emission display (FED), a plasma display panel (PDP), a cathode ray tube (CRT), etc. There is.
- VFD fluorescent display tube
- FED field emission display
- PDP plasma display panel
- CRT cathode ray tube
- the phosphor of the present invention has been confirmed to emit light by excitation such as vacuum ultraviolet rays of 100 to 190 nm, ultraviolet rays of 190 to 3800 nm, and electron beams.
- the image display apparatus as described above can be constituted by a combination with the phosphor of the present invention.
- Raw material powder has an average particle size 0. 5 ⁇ um, oxygen content 0.9 3 wt%, alpha-type content 9 2% nitride Kei-containing powder, the specific surface area 3. 3 m 2 Zg, oxygen content 0. 79 9% aluminum nitride powder, calcium nitride powder, and europium nitride synthesized by nitriding metal europium in ammonia were used.
- Composition formula
- the firing atmosphere was evacuated by a diffusion pump, heated from room temperature to 800 ° C at a rate of 500 ° C per hour, and at a temperature of 800 ° C, the purity was 9 9.
- 9 9 9 Volume% nitrogen was introduced to a pressure of 1 MPa, the temperature was raised to 180 ° C. at 500 ° C./hour, and maintained at 180 ° C. for 2 hours.
- the obtained fired body was coarsely pulverized, and then powdered by hand using a crucible and a mortar made of sintered nitrided silicon, and passed through a 30 ⁇ m eye sieve. When the particle size distribution was measured, the average particle size was 15 ⁇ m.
- the synthesized compound was pulverized using an agate mortar, and powder X-ray diffraction measurement was carried out using the 11 wires. As a result, the obtained chart is shown in FIG. 2, and other phases of the C a A 1 Si N 3 crystal were not detected.
- the composition analysis of this powder was performed by the following method. First, put 50 mg of a sample into a platinum crucible, add sodium carbonate 0.5 ⁇ and 0.2 g of hydrofluoric acid, heat and melt, dissolve in 2 ml of hydrochloric acid, and maintain a constant volume of 100 ml. A measurement solution was prepared. This liquid sample was subjected to ICP emission spectroscopic analysis to quantify the amounts of Si, Al, Eu, and Ca in the powder sample.
- a commercially available YAG: Ce phosphor (manufactured by Kasei Optonics Co., Ltd., P 4 6 Y 3) is standardized so that the emission intensity is 1.
- the phosphor had a peak in the red light at 649 nm in the emission spectrum by excitation at 449 nm.
- Table 3 shows the peak wavelength and peak emission intensity of the excitation and emission spectra. The peak emission intensity was 1.09.
- the excitation spectrum of this powder has a feature of less absorption in the wavelength range from 500 nm to 60 nm compared to Example 1, so this phosphor can be combined with other green or yellow phosphors. When combined, it has the advantage that the amount of light emitted by other phosphors is small. Examples 3 to 4 3;
- Inorganic compounds were prepared in the same manner as in Example 1 except for the compositions shown in Tables 1 and 2.
- the excitation and emission spectra of the synthesized inorganic compounds were measured. As shown in Table 3, they were excited by UV light and visible light from 3500 nm to 60 nm, and from 570 nm to 700 nm. It was confirmed to be a red phosphor having an emission peak in the nm range.
- Figure 6 shows a schematic structural diagram of white LED as a lighting fixture. Using 4500 nm blue LED 2 as the light emitting element, the phosphor of Example 1 of the present invention,
- One Sialon A structure in which a yellow phosphor of Eu was dispersed in a resin layer and covered with blue LED 2. When an electric current is passed through the conductive terminal, the LED 2 emits light of 45 nm, and this light excites the yellow and red phosphors to emit yellow and red light. And yellow and red mixed to function as a lighting device that emits light bulb-colored light.
- blending is shown.
- UV light of 3800 nm is used as a light emitting element, and the phosphor of Example 1 of the present invention, a blue phosphor (B a MgAlO-Eu), and a green phosphor (B a mg a l 10 O 1 7: E u, Mn) and the dispersed resin layer a structure which is covered on the ultraviolet L ED.
- the LED emits light of 3800 nm, and this light excites the red, green, and blue phosphors to emit red, green, and blue light.
- These lights were mixed to function as a lighting device that emits white light.
- blending is shown.
- FIG. 7 is a principle schematic diagram of a plasma display panel as an image display device.
- the red phosphor and the green ′ phosphor (Zn 2 S i 0 4 : Mn) and the blue phosphor (B a M g Al 10 O 17 : E u) of Example 1 of the present invention were used in the respective cells. It is applied to the inner surface of 1 1, 1 2 and 1 3.
- vacuum ultraviolet rays are generated by Xe discharge in the cell, which excites the phosphor and emits red, green, and blue visible light, This light was observed from the outside through the protective layer 20, the dielectric layer 19, and the glass substrate 22, and could function as an image display.
- the nitride phosphor of the present invention exhibits light emission at a wavelength higher than that of the conventional sialic acid oxynitride phosphor, is excellent as a red phosphor, and further exhibits the brightness of the phosphor when exposed to an excitation source. It is a nitride phosphor that is suitably used for VFD, FED, PDP, CRT, white LED, etc. because of its low decrease. In the future, it can be expected to contribute greatly to industrial development by being used greatly in the design of materials for various display devices.
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Luminescent Compositions (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
Description
Claims
Priority Applications (4)
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US11/631,358 US7947198B2 (en) | 2004-06-30 | 2005-06-23 | Phosphor and light emitting instrument |
EP05755645A EP1777280A4 (en) | 2004-06-30 | 2005-06-23 | FLUORESCENT SUBSTANCE AND LUMINESCENT EQUIPMENT |
CN2005800220956A CN1977030B (zh) | 2004-06-30 | 2005-06-23 | 荧光体和发光器具 |
KR1020067027771A KR101147560B1 (ko) | 2004-06-30 | 2005-06-23 | 형광체와 발광기구 |
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JP2004192445A JP4565141B2 (ja) | 2004-06-30 | 2004-06-30 | 蛍光体と発光器具 |
JP2004-192445 | 2004-06-30 |
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US (1) | US7947198B2 (ja) |
EP (1) | EP1777280A4 (ja) |
JP (1) | JP4565141B2 (ja) |
KR (1) | KR101147560B1 (ja) |
CN (1) | CN1977030B (ja) |
TW (1) | TW200617145A (ja) |
WO (1) | WO2006003961A1 (ja) |
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US11697765B2 (en) | 2003-11-26 | 2023-07-11 | Mitsubishi Chemical Corporation | Phosphor and light-emitting equipment using phosphor |
US11084980B2 (en) | 2003-11-26 | 2021-08-10 | Mitsubishi Chemical Corporation | Phosphor and light-emitting equipment using phosphor |
US10072207B2 (en) | 2003-11-26 | 2018-09-11 | Mitsubishi Chemical Corporation | Phosphor and light-emitting equipment using phosphor |
US8491817B2 (en) | 2006-03-10 | 2013-07-23 | Kabushiki Kaisha Toshiba | Luminescent material and light-emitting device |
US8450923B2 (en) | 2006-03-10 | 2013-05-28 | Kabushiki Kaisha Toshiba | Luminescent material and light-emitting device |
US8475680B2 (en) | 2006-03-10 | 2013-07-02 | Kabushiki Kaisha Toshiba | Luminescent material and light-emitting device |
US8482192B2 (en) | 2006-03-10 | 2013-07-09 | Kabushiki Kaisha Toshiba | Luminescent material and light-emitting device |
EP2003183A1 (en) * | 2006-03-10 | 2008-12-17 | Kabushiki Kaisha Toshiba | Phosphor and light-emitting device |
EP2518129A3 (en) * | 2006-03-10 | 2013-04-03 | Kabushiki Kaisha Toshiba | Luminescent material and light-emitting device |
EP2003183A4 (en) * | 2006-03-10 | 2010-12-01 | Toshiba Kk | PHOSPHOR AND LUMINESCENT DEVICE |
CN101522859B (zh) * | 2006-09-29 | 2012-11-28 | 同和电子科技有限公司 | 荧光体、荧光体薄片、荧光体的制造方法以及使用该荧光体的发光装置 |
CN104080885A (zh) * | 2012-01-27 | 2014-10-01 | 电气化学工业株式会社 | 荧光体、其制备方法及其用途 |
CN104080885B (zh) * | 2012-01-27 | 2016-07-27 | 电化株式会社 | 荧光体、其制备方法及其用途 |
CN104039922A (zh) * | 2012-07-25 | 2014-09-10 | 独立行政法人物质·材料研究机构 | 荧光体及其制备方法、发光装置及图像显示装置 |
CN102911662B (zh) * | 2012-10-24 | 2015-05-20 | 江苏博睿光电有限公司 | 一种氮化物荧光粉及其制备方法 |
CN102911662A (zh) * | 2012-10-24 | 2013-02-06 | 江苏博睿光电有限公司 | 一种氮化物荧光粉及其制备方法 |
Also Published As
Publication number | Publication date |
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CN1977030B (zh) | 2011-10-05 |
KR20070046795A (ko) | 2007-05-03 |
TW200617145A (en) | 2006-06-01 |
JP4565141B2 (ja) | 2010-10-20 |
KR101147560B1 (ko) | 2012-05-21 |
EP1777280A1 (en) | 2007-04-25 |
US7947198B2 (en) | 2011-05-24 |
US20080303409A1 (en) | 2008-12-11 |
CN1977030A (zh) | 2007-06-06 |
EP1777280A4 (en) | 2009-04-22 |
JP2006016413A (ja) | 2006-01-19 |
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