WO2005086215A1 - プラズマ処理方法及びコンピュータ記憶媒体 - Google Patents

プラズマ処理方法及びコンピュータ記憶媒体 Download PDF

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Publication number
WO2005086215A1
WO2005086215A1 PCT/JP2005/003488 JP2005003488W WO2005086215A1 WO 2005086215 A1 WO2005086215 A1 WO 2005086215A1 JP 2005003488 W JP2005003488 W JP 2005003488W WO 2005086215 A1 WO2005086215 A1 WO 2005086215A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
plasma processing
processing method
supply
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/003488
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Seiji Matsuyama
Toshio Nakanishi
Shigenori Ozaki
Hikaru Adachi
Koichi Takatsuki
Yoshihiro Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006510687A priority Critical patent/JP5101103B2/ja
Priority to CN2005800068658A priority patent/CN1926670B/zh
Priority to EP05719803A priority patent/EP1722406A1/en
Publication of WO2005086215A1 publication Critical patent/WO2005086215A1/ja
Priority to US11/514,236 priority patent/US7723241B2/en
Anticipated expiration legal-status Critical
Priority to US12/757,802 priority patent/US7897518B2/en
Priority to US13/019,093 priority patent/US8183165B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

Definitions

  • the nitrogen distribution can be unevenly distributed on the electrode (front surface) side, so that a flat band voltage comparable to that of the thermally oxidized film can be obtained. For this reason, the advantages of plasma, such as easy diffusion of impurities at the surface, are obtained.
  • a planar antenna member for example, a disk-shaped radial line slot antenna 30 is provided, and further, a slow wave plate 31 is provided on the upper surface of the radial line slot antenna 30.
  • the retardation plate 31 is further provided with a conductive cover 32 for covering the retardation plate 31.
  • the cover 32 is provided with a cooling unit to cool the cover 32 and the transmission window 20.
  • the radial line slot antenna 30 is composed of a thin disk of copper coated or coated with a conductive material, for example, Ag or Au, and a number of slits 33 are arranged in a spiral or concentric shape, for example. Is formed.
  • the wafer W thus plasma-nitrided may be subsequently annealed.
  • Various annealing devices can be used for the annealing process.
  • a lamp annealing type annealing device 51 shown in FIG. 2 can be used.
  • the thickness of the base oxide film is 1. Onm, the pressure in the processing vessel is 50 mTorr (6.65 Pa), and the nominal is 1500 W.
  • the gas used for plasma nitriding was a flow rate ratio of 1000 sccm / 40 sccm for argon gas and nitrogen gas. Assuming that the plasma nitriding time is 5, 10, 20, and 40 seconds, the nitrogen concentration in the gate oxide film at that time is 5 at%, 9 at%, 11 at%, and 15 at%, respectively.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
PCT/JP2005/003488 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体 Ceased WO2005086215A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006510687A JP5101103B2 (ja) 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体
CN2005800068658A CN1926670B (zh) 2004-03-03 2005-03-02 等离子体处理方法
EP05719803A EP1722406A1 (en) 2004-03-03 2005-03-02 Plasma processing method and computer storing medium
US11/514,236 US7723241B2 (en) 2004-03-03 2006-09-01 Plasma processing method and computer storage medium
US12/757,802 US7897518B2 (en) 2004-03-03 2010-04-09 Plasma processing method and computer storage medium
US13/019,093 US8183165B2 (en) 2004-03-03 2011-02-01 Plasma processing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004058945 2004-03-03
JP2004-058945 2004-03-03
JP2004268236 2004-09-15
JP2004-268236 2004-09-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/514,236 Continuation-In-Part US7723241B2 (en) 2004-03-03 2006-09-01 Plasma processing method and computer storage medium

Publications (1)

Publication Number Publication Date
WO2005086215A1 true WO2005086215A1 (ja) 2005-09-15

Family

ID=34921660

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/003488 Ceased WO2005086215A1 (ja) 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体

Country Status (7)

Country Link
US (3) US7723241B2 (enExample)
EP (1) EP1722406A1 (enExample)
JP (1) JP5101103B2 (enExample)
KR (2) KR100956467B1 (enExample)
CN (2) CN1926670B (enExample)
TW (1) TW200540992A (enExample)
WO (1) WO2005086215A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008081723A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
WO2008081724A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
US7723241B2 (en) 2004-03-03 2010-05-25 Tokyo Electron Limited Plasma processing method and computer storage medium

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
US20100239781A1 (en) * 2007-05-29 2010-09-23 Masaki Sano Method for in-chamber preprocessing in plasma nitridation processing, plasma processing method, and plasma processing apparatus
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP5357486B2 (ja) * 2008-09-30 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置
JP5490087B2 (ja) * 2011-12-28 2014-05-14 東京エレクトロン株式会社 マイクロ波加熱処理装置および処理方法
KR101851199B1 (ko) 2011-12-28 2018-04-25 삼성전자주식회사 질화된 게이트 절연층을 포함하는 반도체 소자 및 그 제조 방법
CN106159036A (zh) * 2015-04-13 2016-11-23 中兴通讯股份有限公司 一种硅基光电子系统的制备方法
JP2019009305A (ja) * 2017-06-26 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
CN112864007B (zh) * 2019-11-28 2022-04-12 长鑫存储技术有限公司 半导体结构的形成方法
TWI793744B (zh) * 2020-09-09 2023-02-21 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法及程式

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JP2002222941A (ja) * 2001-01-24 2002-08-09 Sony Corp Ｍｉｓ型半導体装置及びその製造方法
JP2003077915A (ja) * 2001-09-04 2003-03-14 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及びその形成装置
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法

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JP2003077915A (ja) * 2001-09-04 2003-03-14 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及びその形成装置
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723241B2 (en) 2004-03-03 2010-05-25 Tokyo Electron Limited Plasma processing method and computer storage medium
US7897518B2 (en) 2004-03-03 2011-03-01 Tokyo Electron Limited Plasma processing method and computer storage medium
US8183165B2 (en) 2004-03-03 2012-05-22 Tokyo Electron Limited Plasma processing method
WO2008081723A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
WO2008081724A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
JPWO2008081723A1 (ja) * 2006-12-28 2010-04-30 東京エレクトロン株式会社 絶縁膜の形成方法および半導体装置の製造方法
JPWO2008081724A1 (ja) * 2006-12-28 2010-04-30 東京エレクトロン株式会社 絶縁膜の形成方法および半導体装置の製造方法
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US8247331B2 (en) 2006-12-28 2012-08-21 Tokyo Electron Limited Method for forming insulating film and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
US7723241B2 (en) 2010-05-25
KR20080079339A (ko) 2008-08-29
JP5101103B2 (ja) 2012-12-19
TWI368945B (enExample) 2012-07-21
KR100956466B1 (ko) 2010-05-07
US7897518B2 (en) 2011-03-01
US20070059944A1 (en) 2007-03-15
KR100956467B1 (ko) 2010-05-07
US20100196627A1 (en) 2010-08-05
US20110124202A1 (en) 2011-05-26
CN102181819A (zh) 2011-09-14
TW200540992A (en) 2005-12-16
CN1926670A (zh) 2007-03-07
EP1722406A1 (en) 2006-11-15
CN1926670B (zh) 2011-05-18
JPWO2005086215A1 (ja) 2008-01-24
KR20060116030A (ko) 2006-11-13
US8183165B2 (en) 2012-05-22

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