JP5101103B2 - プラズマ処理方法及びコンピュータ記憶媒体 - Google Patents

プラズマ処理方法及びコンピュータ記憶媒体 Download PDF

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Publication number
JP5101103B2
JP5101103B2 JP2006510687A JP2006510687A JP5101103B2 JP 5101103 B2 JP5101103 B2 JP 5101103B2 JP 2006510687 A JP2006510687 A JP 2006510687A JP 2006510687 A JP2006510687 A JP 2006510687A JP 5101103 B2 JP5101103 B2 JP 5101103B2
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Prior art keywords
plasma
nitriding
supply
substrate
microwave
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Japanese (ja)
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JPWO2005086215A1 (ja
Inventor
征嗣 松山
敏雄 中西
成則 尾崎
光 足立
浩一 高槻
吉宏 佐藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006510687A 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体 Expired - Fee Related JP5101103B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006510687A JP5101103B2 (ja) 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2004058945 2004-03-03
JP2004058945 2004-03-03
JP2004268236 2004-09-15
JP2004268236 2004-09-15
JP2006510687A JP5101103B2 (ja) 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体
PCT/JP2005/003488 WO2005086215A1 (ja) 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体

Publications (2)

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JPWO2005086215A1 JPWO2005086215A1 (ja) 2008-01-24
JP5101103B2 true JP5101103B2 (ja) 2012-12-19

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JP2006510687A Expired - Fee Related JP5101103B2 (ja) 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体

Country Status (7)

Country Link
US (3) US7723241B2 (enExample)
EP (1) EP1722406A1 (enExample)
JP (1) JP5101103B2 (enExample)
KR (2) KR100956467B1 (enExample)
CN (2) CN1926670B (enExample)
TW (1) TW200540992A (enExample)
WO (1) WO2005086215A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
EP1722406A1 (en) 2004-03-03 2006-11-15 Tokyo Electron Limited Plasma processing method and computer storing medium
US8247331B2 (en) * 2006-12-28 2012-08-21 Tokyo Electron Limited Method for forming insulating film and method for manufacturing semiconductor device
WO2008081724A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
JP5390379B2 (ja) * 2007-05-29 2014-01-15 東京エレクトロン株式会社 プラズマ窒化処理におけるチャンバ内の前処理方法、プラズマ処理方法、および記憶媒体
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP5357486B2 (ja) 2008-09-30 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置
KR101851199B1 (ko) 2011-12-28 2018-04-25 삼성전자주식회사 질화된 게이트 절연층을 포함하는 반도체 소자 및 그 제조 방법
JP5490087B2 (ja) * 2011-12-28 2014-05-14 東京エレクトロン株式会社 マイクロ波加熱処理装置および処理方法
CN106159036A (zh) * 2015-04-13 2016-11-23 中兴通讯股份有限公司 一种硅基光电子系统的制备方法
JP2019009305A (ja) * 2017-06-26 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
CN112864007B (zh) * 2019-11-28 2022-04-12 长鑫存储技术有限公司 半导体结构的形成方法
TWI793744B (zh) * 2020-09-09 2023-02-21 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法及程式

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141576A (ja) * 1988-11-18 1990-05-30 Sumitomo Metal Ind Ltd プラズマプロセス装置
JPH08288271A (ja) * 1995-04-18 1996-11-01 Sony Corp 成膜方法およびこれに用いる成膜装置
JP2002222941A (ja) * 2001-01-24 2002-08-09 Sony Corp Ｍｉｓ型半導体装置及びその製造方法
JP2003077915A (ja) * 2001-09-04 2003-03-14 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及びその形成装置
JP2003078132A (ja) * 2001-08-31 2003-03-14 Toshiba Corp 半導体装置の製造方法
JP2003282565A (ja) * 2002-01-18 2003-10-03 Arieesu Gijutsu Kenkyu Kk 成膜方法、成膜装置、及び半導体装置
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
JP2004048001A (ja) * 2002-07-01 2004-02-12 Internatl Business Mach Corp <Ibm> 窒化酸化シリコン・ゲート絶縁膜の形成方法

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US6143081A (en) 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
KR100537679B1 (ko) * 1996-07-12 2006-04-06 동경 엘렉트론 주식회사 성막장치 및 성막방법
KR200156080Y1 (ko) 1996-08-22 1999-09-01 유창근 의자용 유압실린더의 제어밸브몸통
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
JP2002208593A (ja) 2001-01-11 2002-07-26 Tokyo Electron Ltd シリコン酸窒化膜形成方法
TWI225668B (en) 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
JP4256340B2 (ja) 2002-05-16 2009-04-22 東京エレクトロン株式会社 基板処理方法
US7179754B2 (en) * 2003-05-28 2007-02-20 Applied Materials, Inc. Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy
EP1722406A1 (en) 2004-03-03 2006-11-15 Tokyo Electron Limited Plasma processing method and computer storing medium
US7163877B2 (en) * 2004-08-18 2007-01-16 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
JPWO2006046634A1 (ja) * 2004-10-28 2008-05-22 東京エレクトロン株式会社 ゲート絶縁膜の形成方法，半導体装置及びコンピュータ記録媒体
US20070049048A1 (en) * 2005-08-31 2007-03-01 Shahid Rauf Method and apparatus for improving nitrogen profile during plasma nitridation

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141576A (ja) * 1988-11-18 1990-05-30 Sumitomo Metal Ind Ltd プラズマプロセス装置
JPH08288271A (ja) * 1995-04-18 1996-11-01 Sony Corp 成膜方法およびこれに用いる成膜装置
JP2002222941A (ja) * 2001-01-24 2002-08-09 Sony Corp Ｍｉｓ型半導体装置及びその製造方法
JP2003078132A (ja) * 2001-08-31 2003-03-14 Toshiba Corp 半導体装置の製造方法
JP2003077915A (ja) * 2001-09-04 2003-03-14 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及びその形成装置
JP2003282565A (ja) * 2002-01-18 2003-10-03 Arieesu Gijutsu Kenkyu Kk 成膜方法、成膜装置、及び半導体装置
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
JP2004048001A (ja) * 2002-07-01 2004-02-12 Internatl Business Mach Corp <Ibm> 窒化酸化シリコン・ゲート絶縁膜の形成方法

Also Published As

Publication number Publication date
KR100956466B1 (ko) 2010-05-07
CN1926670A (zh) 2007-03-07
EP1722406A1 (en) 2006-11-15
US7897518B2 (en) 2011-03-01
JPWO2005086215A1 (ja) 2008-01-24
KR20080079339A (ko) 2008-08-29
CN102181819A (zh) 2011-09-14
US7723241B2 (en) 2010-05-25
TWI368945B (enExample) 2012-07-21
US20110124202A1 (en) 2011-05-26
WO2005086215A1 (ja) 2005-09-15
KR20060116030A (ko) 2006-11-13
TW200540992A (en) 2005-12-16
CN1926670B (zh) 2011-05-18
US20070059944A1 (en) 2007-03-15
KR100956467B1 (ko) 2010-05-07
US20100196627A1 (en) 2010-08-05
US8183165B2 (en) 2012-05-22

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