CN1926670B - 等离子体处理方法 - Google Patents

等离子体处理方法 Download PDF

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Publication number
CN1926670B
CN1926670B CN2005800068658A CN200580006865A CN1926670B CN 1926670 B CN1926670 B CN 1926670B CN 2005800068658 A CN2005800068658 A CN 2005800068658A CN 200580006865 A CN200580006865 A CN 200580006865A CN 1926670 B CN1926670 B CN 1926670B
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China
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plasma
treatment
time
supply
film
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Expired - Fee Related
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CN2005800068658A
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English (en)
Chinese (zh)
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CN1926670A (zh
Inventor
松山征嗣
中西敏雄
尾崎成则
足立光
高槻浩一
佐藤吉宏
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2005800068658A 2004-03-03 2005-03-02 等离子体处理方法 Expired - Fee Related CN1926670B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004058945 2004-03-03
JP058945/2004 2004-03-03
JP2004268236 2004-09-15
JP268236/2004 2004-09-15
PCT/JP2005/003488 WO2005086215A1 (ja) 2004-03-03 2005-03-02 プラズマ処理方法及びコンピュータ記憶媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2011100759456A Division CN102181819A (zh) 2004-03-03 2005-03-02 等离子体氮化处理方法

Publications (2)

Publication Number Publication Date
CN1926670A CN1926670A (zh) 2007-03-07
CN1926670B true CN1926670B (zh) 2011-05-18

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Family Applications (2)

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CN2005800068658A Expired - Fee Related CN1926670B (zh) 2004-03-03 2005-03-02 等离子体处理方法
CN2011100759456A Pending CN102181819A (zh) 2004-03-03 2005-03-02 等离子体氮化处理方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2011100759456A Pending CN102181819A (zh) 2004-03-03 2005-03-02 等离子体氮化处理方法

Country Status (7)

Country Link
US (3) US7723241B2 (enExample)
EP (1) EP1722406A1 (enExample)
JP (1) JP5101103B2 (enExample)
KR (2) KR100956467B1 (enExample)
CN (2) CN1926670B (enExample)
TW (1) TW200540992A (enExample)
WO (1) WO2005086215A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
EP1722406A1 (en) 2004-03-03 2006-11-15 Tokyo Electron Limited Plasma processing method and computer storing medium
JPWO2008081723A1 (ja) * 2006-12-28 2010-04-30 東京エレクトロン株式会社 絶縁膜の形成方法および半導体装置の製造方法
US8158535B2 (en) 2006-12-28 2012-04-17 Tokyo Electron Limited Method for forming insulating film and method for manufacturing semiconductor device
US20100239781A1 (en) * 2007-05-29 2010-09-23 Masaki Sano Method for in-chamber preprocessing in plasma nitridation processing, plasma processing method, and plasma processing apparatus
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP5357486B2 (ja) * 2008-09-30 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置
JP5490087B2 (ja) * 2011-12-28 2014-05-14 東京エレクトロン株式会社 マイクロ波加熱処理装置および処理方法
KR101851199B1 (ko) 2011-12-28 2018-04-25 삼성전자주식회사 질화된 게이트 절연층을 포함하는 반도체 소자 및 그 제조 방법
CN106159036A (zh) * 2015-04-13 2016-11-23 中兴通讯股份有限公司 一种硅基光电子系统的制备方法
JP2019009305A (ja) * 2017-06-26 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
CN112864007B (zh) * 2019-11-28 2022-04-12 长鑫存储技术有限公司 半导体结构的形成方法
TWI793744B (zh) * 2020-09-09 2023-02-21 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法及程式

Citations (1)

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US6399520B1 (en) * 1999-03-10 2002-06-04 Tokyo Electron Limited Semiconductor manufacturing method and semiconductor manufacturing apparatus

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JPH08288271A (ja) * 1995-04-18 1996-11-01 Sony Corp 成膜方法およびこれに用いる成膜装置
KR100537679B1 (ko) * 1996-07-12 2006-04-06 동경 엘렉트론 주식회사 성막장치 및 성막방법
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
KR200156080Y1 (ko) 1996-08-22 1999-09-01 유창근 의자용 유압실린더의 제어밸브몸통
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US6399520B1 (en) * 1999-03-10 2002-06-04 Tokyo Electron Limited Semiconductor manufacturing method and semiconductor manufacturing apparatus

Non-Patent Citations (2)

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Title
JP特开2002-222941A 2002.08.09
JP特开2003-77915A 2003.03.14

Also Published As

Publication number Publication date
US7723241B2 (en) 2010-05-25
KR20080079339A (ko) 2008-08-29
WO2005086215A1 (ja) 2005-09-15
JP5101103B2 (ja) 2012-12-19
TWI368945B (enExample) 2012-07-21
KR100956466B1 (ko) 2010-05-07
US7897518B2 (en) 2011-03-01
US20070059944A1 (en) 2007-03-15
KR100956467B1 (ko) 2010-05-07
US20100196627A1 (en) 2010-08-05
US20110124202A1 (en) 2011-05-26
CN102181819A (zh) 2011-09-14
TW200540992A (en) 2005-12-16
CN1926670A (zh) 2007-03-07
EP1722406A1 (en) 2006-11-15
JPWO2005086215A1 (ja) 2008-01-24
KR20060116030A (ko) 2006-11-13
US8183165B2 (en) 2012-05-22

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Granted publication date: 20110518

Termination date: 20140302