JP5101103B2 - プラズマ処理方法及びコンピュータ記憶媒体 - Google Patents
プラズマ処理方法及びコンピュータ記憶媒体 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 16
- 238000003860 storage Methods 0.000 title claims description 6
- 238000005121 nitriding Methods 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 57
- 238000000137 annealing Methods 0.000 claims description 47
- 239000007789 gas Substances 0.000 claims description 46
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 230000002829 reductive effect Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 claims 2
- 230000006837 decompression Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 69
- 239000004065 semiconductor Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- -1 nitrogen ion Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
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- Formation Of Insulating Films (AREA)
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Description
また従来は,ゲート酸化膜に窒素を導入したトランジスタの静特性(ゲートリーク電流,ソースドレインON電流)とNBTIの両者を向上させることが難しかった。
2 処理容器
3 サセプタ
5 側壁
20 透過窓
36 マイクロ波供給装置
38 パルス発振器
41 シャワープレート
51 アニール装置
パルス条件1は,ON時間/OFF時間が50μS/50μS(ONデューティー50%,繰返し周期10kHz),
パルス条件2は,ON時間/OFF時間が50μS/10μS(ONデューティー83%,繰返し周期17kHz),
パルス条件3は,ON時間/OFF時間が10μS/10μS(ONデューティー50%,繰返し周期50kHz),
パルス条件4は,ON時間/OFF時間が200μS/500μS(ONデューティー29%,繰返し周期1kHz)
である。
なお図中,CWは,連続波の場合を示している。
Claims (8)
- 酸化膜形成後の基板に対して,マイクロ波によって発生させたプラズマによって窒化処理するプラズマ処理方法であって,前記プラズマによる窒化処理の前に,減圧Arガス雰囲気内で基板を予め加熱し、
次いで、Arガス雰囲気内において、前記プラズマによる窒化処理時の圧力よりも高い圧力でプラズマを着火し、
前記プラズマによる窒化処理は,マイクロ波の供給を断続的に行って発生させたプラズマによって行い,
前記断続的な供給におけるマイクロ波の供給ON時間を5〜100μsとし、
前記断続的な供給におけるマイクロ波の供給OFF時間を5〜100μsとし、
前記断続的な供給におけるマイクロ波の供給・停止の繰り返し周期を5kHz〜100kHzとし、
前記断続的な供給におけるマイクロ波のパルス状波形のONデューティー比を30〜83%とし、
前記窒化処理した後の,酸化膜中の窒素濃度を1〜20原子%に制御することで,当該窒化処理した後の、酸化膜のON電流特性とNBTI耐性の双方を、マイクロ波を連続供給して窒化処理した場合と比較して向上させる。 - 請求項1のプラズマ処理方法において,
前記酸化膜中の窒素濃度は5〜15原子%である。 - 請求項1のプラズマ処理方法において,
前記プラズマ窒化処理は,プラズマ処理装置を用いて行われ,
前記プラズマ処理装置は,
処理容器内で基板を載置する載置台と,
処理容器の上方に配置され,処理空間にマイクロ波を導入してマイクロ波を発生させるため誘電体と,
前記処理容器内の上方に処理ガスを供給するガス供給部と,
前記ガス供給部のガス供給口よりも下方で載置台上の基板よりも上方に配置され,多数の透孔を有し,かつ少なくとも前記基板を覆う形態の誘電体板とを備えている。 - 請求項1のプラズマ処理方法において,
前記プラズマ窒化処理の後,さらに前記基板に対して減圧雰囲気でアニール処理を行う工程を有する。 - 請求項4のプラズマ処理方法において,
前記アニール処理は,減圧容器内において,20〜100000Paの減圧度で行われる。 - 請求項4のプラズマ処理方法において,
前記アニール処理は,1秒〜30秒間,基板を900℃〜1200℃の温度に加熱して行われる。 - 請求項4のプラズマ処理方法において,
前記アニール処理は,少なくとも酸素を含むガスを減圧容器内に導入し,この減圧容器内において行われる。 - プラズマ処理方法をプラズマ処理装置において実行させるためのソフトウエアを含む,コンピュータ記憶媒体であって,
前記プラズマ処理方法は,マイクロ波の断続的な供給によって発生させたプラズマにより,酸化膜形成後の基板に対して窒化処理するプラズマ処理方法であって,前記プラズマによる窒化処理の前に,減圧Arガス雰囲気内で基板を予め加熱し、
次いで、Arガス雰囲気内において、前記プラズマによる窒化処理時の圧力よりも高い圧力でプラズマを着火し、
前記プラズマによる窒化処理において,
前記断続的な供給におけるマイクロ波の供給ON時間を5〜100μsとし、
前記断続的な供給におけるマイクロ波の供給OFF時間を5〜100μsとし、
前記断続的な供給におけるマイクロ波の供給・停止の繰り返し周期を5kHz〜100kHzとし、
前記断続的な供給におけるマイクロ波のパルス状波形のONデューティー比を30〜83%とし、
前記窒化処理した後の,前記酸化膜中の窒素濃度を1〜20原子%に制御することで,ON電流特性とNBTI耐性の双方を、マイクロ波を連続供給して窒化処理した場合と比較して向上させる。
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KR (2) | KR100956467B1 (ja) |
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JPWO2008081724A1 (ja) * | 2006-12-28 | 2010-04-30 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および半導体装置の製造方法 |
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JP5520455B2 (ja) * | 2008-06-11 | 2014-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5357486B2 (ja) | 2008-09-30 | 2013-12-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5490087B2 (ja) * | 2011-12-28 | 2014-05-14 | 東京エレクトロン株式会社 | マイクロ波加熱処理装置および処理方法 |
KR101851199B1 (ko) | 2011-12-28 | 2018-04-25 | 삼성전자주식회사 | 질화된 게이트 절연층을 포함하는 반도체 소자 및 그 제조 방법 |
CN106159036A (zh) * | 2015-04-13 | 2016-11-23 | 中兴通讯股份有限公司 | 一种硅基光电子系统的制备方法 |
JP2019009305A (ja) * | 2017-06-26 | 2019-01-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN112864007B (zh) * | 2019-11-28 | 2022-04-12 | 长鑫存储技术有限公司 | 半导体结构的形成方法 |
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CN1926670A (zh) | 2007-03-07 |
KR100956467B1 (ko) | 2010-05-07 |
US7897518B2 (en) | 2011-03-01 |
TWI368945B (ja) | 2012-07-21 |
EP1722406A1 (en) | 2006-11-15 |
JPWO2005086215A1 (ja) | 2008-01-24 |
US8183165B2 (en) | 2012-05-22 |
KR100956466B1 (ko) | 2010-05-07 |
US20100196627A1 (en) | 2010-08-05 |
CN1926670B (zh) | 2011-05-18 |
KR20060116030A (ko) | 2006-11-13 |
US7723241B2 (en) | 2010-05-25 |
US20070059944A1 (en) | 2007-03-15 |
KR20080079339A (ko) | 2008-08-29 |
CN102181819A (zh) | 2011-09-14 |
US20110124202A1 (en) | 2011-05-26 |
WO2005086215A1 (ja) | 2005-09-15 |
TW200540992A (en) | 2005-12-16 |
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