WO2005043555A1 - 積層型正特性サーミスタおよびその設計方法 - Google Patents
積層型正特性サーミスタおよびその設計方法 Download PDFInfo
- Publication number
- WO2005043555A1 WO2005043555A1 PCT/JP2004/013316 JP2004013316W WO2005043555A1 WO 2005043555 A1 WO2005043555 A1 WO 2005043555A1 JP 2004013316 W JP2004013316 W JP 2004013316W WO 2005043555 A1 WO2005043555 A1 WO 2005043555A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ceramic
- thickness
- temperature coefficient
- coefficient thermistor
- positive temperature
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 16
- 239000000919 ceramic Substances 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 33
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 11
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 1
- 239000000843 powder Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6582—Hydrogen containing atmosphere
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/345—Refractory metal oxides
- C04B2237/346—Titania or titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
Definitions
- the present invention relates to a multilayer positive temperature coefficient thermistor and a method for designing the same, and more particularly to a multilayer positive temperature coefficient thermistor formed using a barium titanate-based semiconductor ceramic and a method for designing the same.
- Barium titanate (BaTiO 3) -based semiconductor ceramics constitute a positive temperature coefficient thermistor.
- FIG. 1 is a cross-sectional view showing a positive temperature coefficient thermistor of interest to the present invention.
- FIG. 1 shows a stacked, ie, stacked, positive temperature coefficient thermistor 1.
- a multilayer positive temperature coefficient thermistor 1 is a BaTiO
- An element main body 4 having a multilayer structure, comprising a plurality of stacked ceramic layers 2 of a three-system semiconductor ceramic strength and internal electrodes 3 formed along a plurality of interfaces between the ceramic layers 2, respectively.
- External electrodes 5 are formed on both ends of the element body 4, respectively.
- the internal electrodes 3 described above are arranged such that those electrically connected to one external electrode 5 and those electrically connected to the other external electrode 5 are alternately arranged in the laminating direction.
- the internal electrode 3 contains nickel in many cases. This is because nickel is relatively inexpensive and can give the ceramic layer 2 an ohmic property.
- the external electrode 5 contains, for example, silver as a conductive component.
- the ceramic layer 2 is to be used, and is a cell for BaTiO-based semiconductor ceramic.
- a ceramic green sheet containing a lamic raw material powder is prepared.
- a film made of a conductive paste containing nickel serving as the internal electrode 3 is formed by a printing method or the like.
- a plurality of ceramic green sheets on which the conductive paste film is formed are stacked, and a protective ceramic line sheet on which no conductive paste film is formed is stacked above and below the ceramic green sheets. Crimping is performed, and then, if necessary, cut to a predetermined size. As a result, a raw element body 4 can be obtained.
- the raw element body 4 is fired in a reducing atmosphere in which nickel contained in the conductive paste film for the internal electrode 3 is not oxidized.
- the ceramic green sheets that become the ceramic layers 2 are sintered, and the conductive paste that becomes the internal electrodes 3 is sintered.
- a conductive paste containing, for example, silver is applied to both ends of the sintered element body 4 and baked in the air.
- the above-described baking step also serves as a reoxidation treatment for the sintered element body 4, thereby giving the ceramic layer 2 thermistor characteristics.
- the thickness of each ceramic layer 2 is reduced, thereby reducing the resistance. It is planned.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2002-43103
- an object of the present invention is to provide a laminated type which can surely achieve low resistance as the ceramic layer is made thinner and can obtain a resistance value close to the calculated resistance value of the laminated structural force.
- Positive characteristic is to provide a thermistor.
- Another object of the present invention is to provide a method of designing a stacked positive temperature coefficient thermistor that can satisfy the above-mentioned needs.
- the present inventor diffused into the ceramic layer in the vicinity of the nickel force internal electrode included in the internal electrode, This diffused nickel acts as an acceptor, and the thinner the ceramic layer, the greater the effect of nickel diffusion in the vicinity of the internal electrodes, and therefore the higher the resistance of the ceramic layer. It has been found that the lowering of the resistance of the stacked positive temperature coefficient thermistor is impaired, and the present invention has been accomplished.
- the donor contained in the barium titanate-based semiconductor ceramic constituting the ceramic layer cancels the action of nickel as an acceptor, and the amount of the donor is adjusted to a predetermined amount.
- the range we are trying to remove the factors that hinder low resistance.
- the present invention provides a plurality of stacked ceramic layers having a barium titanate-based semiconductor ceramic having a positive resistance temperature characteristic and also having a ceramic force, and formed along a plurality of interfaces between ceramic layers, respectively.
- the present invention is directed at first to a stacked positive temperature coefficient thermistor having an element body having a stacked structure with an internal electrode containing nickel, and in order to solve the above-mentioned technical problem, the following configuration is provided. It is characterized by having.
- the thickness of one of the ceramic layers located between the internal electrodes is defined as X [m]
- the donor amount Y [%] contained in the barium titanate-based semiconductor ceramic is represented by (number of donor atoms Z number of atoms) X It is characterized by satisfying the conditions of 5 ⁇ X ⁇ 18 and 4 ⁇ ⁇ ⁇ 10 when represented by 100.
- the present invention also provides a plurality of stacked ceramic layers made of a barium titanate-based semiconductor ceramic exhibiting a positive resistance temperature characteristic, and nickel formed along each of a plurality of interfaces between the ceramic layers.
- the present invention is also directed to a method of designing a stacked positive temperature coefficient thermistor including an element body having a stacked structure with internal electrodes including the same.
- a method of designing a multilayer positive temperature coefficient thermistor according to the present invention includes a step of determining a thickness ⁇ [ ⁇ m] of a ceramic layer so as to satisfy a condition of 5 ⁇ X ⁇ 18, and a barium titanate-based semiconductor cell.
- a process of determining the amount of donor ⁇ [%] ( ⁇ the number of donor atoms and the number of ZTi atoms) ⁇ 100) in the ceramic so as to satisfy the condition of 4 ⁇ X ⁇ Y ⁇ 10 according to the thickness X of the ceramic layer; It is characterized by having.
- the multilayer positive temperature coefficient thermistor according to the present invention or according to the multilayer positive temperature coefficient thermistor manufactured according to the design method according to the present invention, it is ensured that the ceramic layer becomes thinner. In addition, a resistance value close to the resistance value calculated from the multilayer structure can be obtained.
- FIG. 1 is a cross-sectional view showing a laminated positive temperature coefficient thermistor 1 of interest to the present invention.
- FIG. 1 is also a diagram showing a stacked positive temperature coefficient thermistor 1 according to an embodiment of the present invention. Therefore, the description of the structure and the manufacturing method of the multilayer positive temperature coefficient thermistor 1 described above with reference to FIG. 1 can be basically referred to in the description of the embodiment of the present invention, and thus will be repeated. Description is omitted.
- the present invention is applied when the thickness X [m] of one ceramic layer 2 satisfies the condition of 5 ⁇ X ⁇ 18. That is, it is applied when the thickness X of one ceramic layer 2 is 5 m or more and 18 ⁇ m or less.
- the amount of donor ⁇ [%] contained in the 3 series semiconductor ceramic is expressed as (number of donor atoms ZT atoms) X 100, the condition of 4 ⁇ ⁇ ⁇ 10 is satisfied. In short, as the thickness X of the ceramic layer 2 is reduced, the amount of donor ⁇ is increased.
- the donor contained in the BaTiO-based semiconductor ceramic is, for example, La, Sm, or the like.
- rare earth elements or pentavalent elements such as Nb and Sb.
- a conductive paste containing nickel was applied on the ceramic green sheet by a printing method to form a conductive paste film serving as an internal electrode.
- a plurality of ceramic green sheets are stacked so that the conductive paste films face each other with the ceramic green sheets interposed therebetween, and no conductive paste films serving as internal electrodes are formed above and below the ceramic green sheets.
- Protective ceramic green sheets were stacked, pressed, and then cut to a size of 2. Omm X l. 25 mm after firing to obtain a raw element body.
- the thickness of the ceramic green sheet used in each sample was adjusted so that the thickness after firing was 1.2 mm for all the samples shown in Table 1. To change the number of layers.
- the ceramic green sheet and the conductive paste film constituting the raw element body are sintered, and a sintered element body composed of the ceramic layer and the internal electrodes is obtained.
- the conductive paste applied on both ends of the main body was sintered, and a sintered inner layer for an external electrode was obtained.
- a conductive paste containing silver is applied to the inner layer for external electrodes formed on both ends of the sintered element body, dried, and dried at a temperature of 700 ° C. in the air. I baked this. As a result, an outer layer for an external electrode was obtained. At the same time, The mic layer was re-oxidized to give thermistor properties to the ceramic layer.
- the room temperature resistance and the thermistor characteristics of the multilayer positive temperature coefficient thermistor according to each sample thus obtained were measured by a four-terminal method.
- Table 1 also shows the calculated values of the room temperature resistance and the ratio of the room temperature resistance to the calculated value, in addition to the room temperature resistance.
- the calculated values are calculated based on the specific resistance of the BaTiO-based semiconductor ceramic of each sample shown in Table 1 when the ceramic layer is laminated as a sufficiently thick layer with a thickness of 100 m. The obtained value was calculated.
- the thermistor characteristics shown in Table 1 are obtained by calculating the ratio R / R between the resistance value R measured at a temperature of 250 ° C and the resistance value R measured at a temperature of 25 ° C, and calculating the logarithm of the ratio. log (R / R
- samples having the same “thickness ⁇ [/ ⁇ ⁇ ]” as “15” are displayed as a group of Samples 16 to facilitate comparison between samples.
- Samples with the same “ ⁇ ⁇ ⁇ ”, such as “6” are displayed as a group of Samples 7-13.
- Sample 4 belonging to Samples 1 to 6 and Sample 9 belonging to Samples 7 to 13 are identical to each other.
- the thickness X exceeds 18 ⁇ m, the force capable of reducing the ratio to the calculated value is, for example, as shown in Sample 7, the room temperature resistance itself exceeds 0.3 ⁇ and 0.6 ⁇ . Thus, there is a problem that a sufficiently low resistance cannot be achieved.
- the thickness X is less than 5 ⁇ m, good thermistor characteristics cannot be obtained, for example, as in Sample 13, even when the value of ⁇ ⁇ ⁇ is within the range of 4 ⁇ ⁇ ⁇ 10.
- the thickness X [m] of the ceramic layer is determined within a range satisfying the condition of 5 ⁇ X ⁇ 18, the BaTiO-based semiconductor ceramic constituting the ceramic layer is determined.
- the present invention includes a ceramic layer that also has BaTiO-based semiconductor ceramic power, and has a low resistance.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/595,558 US7348873B2 (en) | 2003-10-30 | 2004-09-13 | Multilayer positive temperature coefficient thermistor and method for designing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003370267A JP2007048764A (ja) | 2003-10-30 | 2003-10-30 | 積層型正特性サーミスタおよびその設計方法 |
JP2003-370267 | 2003-10-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005043555A1 true WO2005043555A1 (ja) | 2005-05-12 |
Family
ID=34543856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/013316 WO2005043555A1 (ja) | 2003-10-30 | 2004-09-13 | 積層型正特性サーミスタおよびその設計方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7348873B2 (ja) |
JP (1) | JP2007048764A (ja) |
CN (1) | CN100562950C (ja) |
WO (1) | WO2005043555A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2015318B1 (en) * | 2007-06-12 | 2012-02-29 | TDK Corporation | Stacked PTC thermistor and process for its production |
DE112014001227B4 (de) * | 2013-03-11 | 2019-10-10 | Tdk Corporation | PTC-Thermistorkeramikzusammensetzung und PTC-Thermistorelement |
WO2019204430A1 (en) | 2018-04-17 | 2019-10-24 | Avx Corporation | Varistor for high temperature applications |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000256062A (ja) * | 1999-03-05 | 2000-09-19 | Murata Mfg Co Ltd | 積層型半導体セラミック素子 |
JP2002043103A (ja) * | 2000-05-15 | 2002-02-08 | Murata Mfg Co Ltd | 積層型半導体セラミック素子およびその製造方法 |
JP2004063548A (ja) * | 2002-07-25 | 2004-02-26 | Murata Mfg Co Ltd | 積層型正特性サーミスタの設計方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3204207C2 (de) * | 1982-02-08 | 1985-05-23 | Siemens AG, 1000 Berlin und 8000 München | Elektrischer Widerstand mit einem keramischen PTC-Körper und Verfahren zu seiner Herstellung |
US4766409A (en) * | 1985-11-25 | 1988-08-23 | Murata Manufacturing Co., Ltd. | Thermistor having a positive temperature coefficient of resistance |
JPH06302404A (ja) * | 1993-04-16 | 1994-10-28 | Murata Mfg Co Ltd | 積層型正特性サ−ミスタ |
JPH06302403A (ja) | 1993-04-16 | 1994-10-28 | Murata Mfg Co Ltd | 積層型半導体セラミック素子 |
DE4441280C2 (de) * | 1994-11-19 | 1998-08-27 | Asea Brown Boveri | Kaltleiter und Vorrichtung zur Strombegrenzung mit mindestens einem Kaltleiter |
US6359327B1 (en) * | 1998-03-05 | 2002-03-19 | Murata Manufacturing Co., Ltd. | Monolithic electronic element fabricated from semiconducting ceramic |
JP2001118731A (ja) * | 1999-10-19 | 2001-04-27 | Murata Mfg Co Ltd | チップ型複合電子部品およびその製造方法 |
JP3498211B2 (ja) | 1999-12-10 | 2004-02-16 | 株式会社村田製作所 | 積層型半導体セラミック電子部品 |
-
2003
- 2003-10-30 JP JP2003370267A patent/JP2007048764A/ja active Pending
-
2004
- 2004-09-13 US US10/595,558 patent/US7348873B2/en active Active
- 2004-09-13 WO PCT/JP2004/013316 patent/WO2005043555A1/ja not_active Application Discontinuation
- 2004-09-13 CN CNB2004800322546A patent/CN100562950C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000256062A (ja) * | 1999-03-05 | 2000-09-19 | Murata Mfg Co Ltd | 積層型半導体セラミック素子 |
JP2002043103A (ja) * | 2000-05-15 | 2002-02-08 | Murata Mfg Co Ltd | 積層型半導体セラミック素子およびその製造方法 |
JP2004063548A (ja) * | 2002-07-25 | 2004-02-26 | Murata Mfg Co Ltd | 積層型正特性サーミスタの設計方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070115090A1 (en) | 2007-05-24 |
JP2007048764A (ja) | 2007-02-22 |
CN100562950C (zh) | 2009-11-25 |
US7348873B2 (en) | 2008-03-25 |
CN1875437A (zh) | 2006-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2018137298A (ja) | 積層セラミックコンデンサ | |
JP2017122038A (ja) | 誘電体磁器組成物及びそれを含む積層セラミックキャパシター、並びに積層セラミックキャパシターの製造方法 | |
CN105693236B (zh) | 低温烧结介电组合物以及由其形成的多层陶瓷电容器 | |
WO2003073443A1 (fr) | Procede de fabrication d'un composant electronique multicouche en ceramique | |
JP4710096B2 (ja) | 積層型正特性サーミスタ | |
JP5527404B2 (ja) | 積層セラミック電子部品 | |
JP2001006902A (ja) | 積層型半導体セラミック電子部品 | |
WO2005043555A1 (ja) | 積層型正特性サーミスタおよびその設計方法 | |
TW491821B (en) | Monolithic electronic element fabricated from semiconducting ceramic | |
JP3319471B2 (ja) | 正特性サーミスタ用積層型半導体磁器及びその製造方法 | |
JP4310452B2 (ja) | 積層型正特性サーミスタおよびその製造方法 | |
JP5527405B2 (ja) | 積層セラミック電子部品 | |
JP2009246105A (ja) | 積層コンデンサ | |
WO2013065373A1 (ja) | 半導体セラミックおよびそれを用いたptcサーミスタ | |
JP4710097B2 (ja) | 積層型正特性サーミスタ | |
JP3317246B2 (ja) | 複合セラミック及び複合セラミック素子 | |
EP2450327A1 (en) | Semiconductor ceramic and positive-coefficient thermistor | |
JP5527403B2 (ja) | 積層セラミック電子部品 | |
JP2002043103A (ja) | 積層型半導体セラミック素子およびその製造方法 | |
JP5527401B2 (ja) | 積層セラミック電子部品 | |
JP6739353B2 (ja) | 半導体素子およびその製造方法 | |
WO2011114804A1 (ja) | 積層セラミック電子部品 | |
JP4144080B2 (ja) | 積層型半導体セラミック素子 | |
JP4396190B2 (ja) | 積層バリスタの製造方法 | |
JP4492598B2 (ja) | Ntc組成物及びntc素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480032254.6 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2007115090 Country of ref document: US Ref document number: 10595558 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: JP |
|
WWP | Wipo information: published in national office |
Ref document number: 10595558 Country of ref document: US |