WO2005008764A1 - 熱処理用縦型ボート及びその製造方法 - Google Patents
熱処理用縦型ボート及びその製造方法 Download PDFInfo
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- WO2005008764A1 WO2005008764A1 PCT/JP2004/009960 JP2004009960W WO2005008764A1 WO 2005008764 A1 WO2005008764 A1 WO 2005008764A1 JP 2004009960 W JP2004009960 W JP 2004009960W WO 2005008764 A1 WO2005008764 A1 WO 2005008764A1
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- Prior art keywords
- heat treatment
- support
- arc
- boat
- shaped
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims description 30
- 235000012431 wafers Nutrition 0.000 claims abstract description 84
- 230000002093 peripheral effect Effects 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 238000005520 cutting process Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 4
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- 239000007789 gas Substances 0.000 description 17
- 238000012546 transfer Methods 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 7
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- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
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- 239000004065 semiconductor Substances 0.000 description 5
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- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005276 aerator Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
Definitions
- the present invention relates to a vertical boat for heat treatment of a semiconductor wafer or the like, and more particularly to a vertical boat for heat treatment suitable for heat treatment of a silicon wafer and a method of manufacturing the same.
- a wafer heat treatment process for example, as a diffusion furnace (oxidation / diffusion device) used for oxidation or impurity diffusion, a large number of wafers W as shown in FIG.
- a vertical heat treatment furnace 20 that performs heat treatment while being horizontally supported at predetermined intervals is mainly used.
- the wafer W in the heat treatment furnace 20 can be heated by a heater 24 provided around the reaction chamber 22.
- a gas is introduced into the reaction chamber 22 via a gas introduction pipe 26, flows downward from above and is discharged outside through a gas exhaust pipe 28.
- the gas used varies depending on the purpose of the heat treatment, but H, N, O, Ar, etc. are mainly used. In the case of impurity diffusion, these gases are impure.
- a vertical heat treatment boat 11 (hereinafter, referred to as a "heat treatment boat") for setting a large number of wafers W horizontally. , "Vertical boat” or simply “boat.”
- FIG. 9A schematically shows a general boat 11 for heat treatment.
- a pair of plate members top plate 16a, bottom plate 16b is connected to both ends of four rod-shaped (column-shaped) columns (rods) 14.
- Each support 14 has a number of slits (grooves) 15 formed therein. Acts as a support 12 for the Note that the heat treatment boat in which a large number of grooves 15 are formed in the columnar column 14 is generally called a short finger type.
- the temperature difference between the center and the periphery of the wafer tends to increase, especially when the temperature rises, and the thermal stress generated by this temperature difference also causes the above-mentioned slip. It is one.
- the wafer is a jig 31 that scoops up the backside of the wafer as shown in Fig. 10 (a) or a method that sucks the backside of the wafer as shown in Fig. 10 (b). Since the wafer is transferred using the jig 32, when transferring the wafer to an auxiliary jig such as a ring, a part of the ring as shown in Fig. An arc-shaped auxiliary jig 37 provided with a notch at the bottom and a ring-shaped auxiliary jig 38 provided with a step 39 as shown in FIG. 11B are used.
- the arc-shaped auxiliary jig 37 as described above has an advantage that the number of batch heat treatments can be increased because it is not necessary to increase the groove pitch of a boat that is relatively thin. However, if the heights at both ends of the notch differ, which makes it difficult to maintain the surface accuracy, slipping may occur.
- the jig 38 can be manufactured with relatively high surface accuracy and is advantageous in reducing slippage. It spreads, and the number of batch heat treatments decreases.
- auxiliary jigs 37 and 38 are very expensive because they are formed by piercing a circular plate-shaped member, and are extremely expensive. Dozens of auxiliary jigs are required for batch-type heat treatment. Preparing a set of vertical boats would greatly increase the cost compared to a normal vertical boat that directly supports e-ahead as shown in Fig. 9.
- the present invention can effectively prevent slippage from occurring in a wafer or the like during heat treatment, and can be manufactured with low material cost and relatively easily.
- An object of the present invention is to provide a vertical boat for heat treatment that can be performed.
- a top plate, a bottom plate, and a column member fixed between the top plate and the bottom plate are provided, and a plurality of grooves are formed in the column member.
- a vertical boat for heat treatment characterized in that it is inserted through a groove of a support member and is supported along a peripheral edge of a lower surface by each arc-shaped support portion.
- a support member having an arc-shaped support portion integrally formed on the inner side is formed as a heat treatment vertical boat in which two or more cylindrical members are arranged in a cylindrical shape. Without using a jig separately, it is possible to support the wafer along the peripheral edge of the lower surface of the wafer. Therefore, when a heat treatment of a semiconductor wafer or the like is performed by using this boat for heat treatment, the occurrence of a slip can be effectively prevented.
- each support member is smaller than that of a cylindrical member, and if a predetermined interval is provided between the support members, there is no need to form a cutout portion for passing the transfer jig.
- the yield is high and the manufacturing cost is low, resulting in low cost.
- two support members having arc-shaped support portions having a central angle of 60 ° or more and 170 ° or less may be arranged to face each other.
- two support members having a relatively large center angle of the support portion are arranged opposite to each other, an opening (cut) for passage of the transport jig and ventilation of the atmosphere gas is provided between the support members. (A notch portion) is secured, the transfer of the object to be processed such as an aerial is facilitated, and uniform heat treatment can be performed.
- two symmetrical support members can be used, or ones having exactly the same shape can be arranged to face each other, so that the manufacturing cost can be reduced and the cost can be further reduced.
- strut member three or more strut members having arc-shaped support portions having a central angle of 20 ° or more and 100 ° or less may be arranged.
- center angle of the support part is relatively small and three or more support members are arranged in this way, for example, a notch for venting the atmosphere gas can be arbitrarily secured between the support members as necessary. It is possible to perform uniform heat treatment, and it is also possible to further reduce the manufacturing cost by making each support member the same shape.
- the support member may be provided with a vent at the same height as each of the grooves.
- ventilation holes are provided in the column members themselves, especially in correspondence with each groove, separately from the space between the column members, it becomes easier for the atmospheric gas to pass through the inside and outside of the boat, and the object to be treated is uniformly heat treated. Can be done.
- the ventilation holes are formed at the same height as the grooves, the support portions of the support members are not disconnected, so the cutouts can reduce the occurrence of small slips more effectively. it can.
- the vertical boat for heat treatment can be used for heat treatment of silicon wafers.
- a vertical boat is often used for heat treatment of silicon wafers, and the present invention is used to prevent occurrence of slip. Is particularly effective, and since the boat itself is inexpensive, it can lead to a reduction in the production cost of the wafer.
- an edge of a support surface of the support portion is chamfered.
- the support surface of the support portion may be inclined downward toward the inside. If the support surface is inclined in this manner, it is possible to support the vicinity of the outer peripheral end of a wafer or the like. In other words, the occurrence of scratches on the back surface can be more effectively prevented.
- a heat treatment for horizontally supporting a wafer-shaped object to be processed comprising a top plate, a bottom plate, and a support member fixed between the top plate and the bottom plate.
- a step of producing a column member having an arc-shaped cross section, an outer peripheral radius larger than the radius of the object to be processed, and a smaller inner peripheral radius and A step of cylindrically arranging and fixing between the top plate and the bottom plate by using two or more, forming a groove in each of the support members, and supporting the object to be processed inward along the peripheral edge of the lower surface; Forming a circular arc-shaped support portion for the heat treatment.
- the vertical boat for heat treatment according to the present invention can be efficiently manufactured, and the manufacturing cost can be reduced.
- the method for manufacturing the vertical boat for heat treatment according to the present invention described above comprising using two or more pillar members having the arc-shaped cross section to form the top plate and the bottom plate. Forming the groove in the support member by cutting the object from the direction in which the object is to be inserted, and forming the arc-shaped support portion inside the column.
- a method for manufacturing a vertical boat for heat treatment comprising: a step; and a step of cutting and penetrating the support member with another directional force from the same height. According to such a method, it is possible to efficiently manufacture a vertical boat for heat treatment in which two support members are arranged to face each other and an arc-shaped support portion is integrally formed on each support member. Costs can be kept lower.
- a step of manufacturing a column member having the arc-shaped cross section and having a beam formed on the outside, and forming the column using two or more column members A step of arranging and fixing in a cylindrical shape between the bottom plates, and a circumferential blade having a radius larger than an inner radius of the column member and smaller than an outer radius of the beam portion for each column member.
- the said Forming a groove by cutting the object to be processed from the direction in which the object is to be inserted, forming the arc-shaped support portion inside, and further penetrating a portion other than the beam.
- the circumferential blade is used to insert a groove for inserting the e-aper, a support portion for supporting the periphery of the e-aper, and a through-hole for ensuring ventilation of the ambient gas. Can be formed at once, and the manufacturing cost can be further reduced.
- the vertical boat for heat treatment of the present invention has two or more pillar members having a circular arc-shaped cross section and having a circularly shaped support portion formed inside and having a cylindrical shape. It is configured. With such a boat for heat treatment, it is not necessary to prepare an arc-shaped or ring-shaped auxiliary jig separately. It can be supported over a wide area along the periphery of the aera, and it is relatively easy to use with few materials. It can be manufactured at low cost.
- the interval between the grooves and the thickness of the support portion can be set to be substantially the same as that of a general short finger type vertical boat for heat treatment, and the support portion can maintain high surface accuracy and high strength. it can. Therefore, for example, when heat-treating silicon wafers, using the heat treatment boat of the present invention makes it possible to mass-produce low-cost aniline wafers with almost no slip dislocations or back surface scratches while maintaining high productivity.
- FIG. 1 is a perspective view showing an example of a vertical boat for heat treatment according to the present invention.
- FIG. 2 is a cross-sectional view of the heat treatment boat of FIG. 1 before a groove is formed.
- FIG. 3 is a cross-sectional view of the heat treatment boat of FIG. 1 after the groove formation.
- FIG. 4 is a perspective view illustrating a groove forming process of the heat treatment boat.
- FIG. 5 is a cross-sectional view of the heat treatment boat of FIG. 1 after a through-hole is formed.
- FIG. 6 is an enlarged perspective view of an end portion of a support portion surrounded by C in FIG. 5.
- FIG. 7 is a cross-sectional view showing another example of the vertical boat for heat treatment according to the present invention.
- A Before groove formation processing
- b After groove formation processing
- FIG. 8 is a schematic view showing an example of a vertical heat treatment furnace.
- FIG. 9 is a schematic view showing an example of a conventional vertical boat for heat treatment.
- A Front view
- b Horizontal Cross-sectional view (with the e-ahead supported)
- FIG. 10 is a schematic view showing an example of a transfer jig. ⁇ scooping method (b) Suction method
- FIG. 11 is a perspective view showing an example of an auxiliary jig for supporting the wafer peripheral portion.
- FIG. 12 is a schematic sectional view of the vertical boat for integral heat treatment used in Comparative Experiment 2.
- FIG. 1 schematically shows an example of a vertical boat for heat treatment according to the present invention.
- the heat treatment boat 10 has a circular plate having a central angle of about 120 ° between a hollow disk-shaped top plate 1 and a disk-shaped bottom plate 2 arranged in parallel with the top plate 1.
- Two support members 3 and 4 having an arc-shaped cross section (in the present invention, there is a force S when referred to as an arc-shaped support member or simply a support member) are arranged to face each other in a cylindrical shape and fixed.
- the size (size of the central angle) and arrangement of the arc-shaped support members are set in consideration of the width of the space for passing the transfer jig and the space for passing the atmospheric gas.
- a plurality of grooves 8 are formed in each of the support members 3, 4, so that an arc-shaped support portion 6 having the same center angle as the support members 3, 4 is formed inside the support members 3, 4. .
- Each groove 8 is formed at regular intervals at right angles to the support members 3 and 4. In FIG. 1, the illustration of the support portion 6 in the middle portion of the boat 10 is omitted.
- an appropriate opening (notch) 9 is formed vertically between the opposing strut members 3 and 4, and the side into which the evaporator is inserted is the evaporator.
- the groove 8 is formed so as to have a width wider than the diameter of the wafer to be heat-treated so as not to contact with the wafer.
- support portions (support portions 3a, 3b, 4a and 4b) are formed in the vertical direction.
- a through hole 5 is formed between the columns 3a and 3b.
- the through hole 5 functions as a vent, and during the heat treatment, the circulation of the atmospheric gas and the transfer of the heat are performed promptly, so that the entire surface of the wafer becomes uniform. It is possible to carry out reliable processing reliably.
- the through holes (vents) 5 are formed at the same height as the grooves 8 of the support members 3 and 4, notches other than between the support members 3 and 4 are formed in the support portions 6. There is no. Therefore, the wafer is supported by the two arc-shaped support portions along the lower peripheral edge, and the occurrence of slip can be effectively prevented.
- the edge of the surface 6a of the support portion 6 supporting the wafer is preferably chamfered.
- the arc-shaped support portion 6 of the boat 10 according to the present invention supports the lower peripheral edge of the wafer, if a severe heat treatment is performed such that the temperature rising rate and the temperature decreasing rate become extremely high, the support face 6a Slip occurs due to point contact at the remaining minute protrusions or point contact at the edge of the support part 6 or at the corner of the inner circumference, especially when the wafer is bent during heat treatment. Is also conceivable.
- the support surface is polished and smoothed, or the edge of the support surface is chamfered, and particularly, as shown in FIG. It is preferable to round the inner corner 6c so that point contact does not occur.
- the support surface 6a of the support portion 6 may be formed so as to be inclined downward toward the inside. Even in the case where the boat is supported along the periphery of the lower surface by the boat 10 of the present invention, a force that causes some back surface flaws in an area several mm wide from the outer periphery in contact with the support portion 6 By forming a taper that is inclined downward inside the boat 10 like an edge, and supporting the wafer only at the edge or near the edge, scratches on the back surface can be further reduced. .
- the arc-shaped support portions 6 are formed integrally with the support members 3, 4, an arc-shaped auxiliary jig or the like is separately provided. Even if the wafer is not used, it can be widely supported along the periphery of the lower surface of the wafer. Further, since each of the columns 3a, 3b, 4a, 4b and the support portion 6 are integrally fixed, the support portion 6 can maintain high surface accuracy and high strength. Further, the groove pitch can be made comparable to that of a general short-finger type heat treatment boat, and the number of heat treatments of the notch does not decrease.
- auxiliary jigs In addition to the need for auxiliary jigs, it is a combination of arc-shaped support members 3 and 4. Therefore, manufacturing costs such as material costs are lower and manufacturing costs are lower than when manufacturing by forming vertical and horizontal grooves in one cylindrical member.
- the column members 3 and 4 opposed to each other as described above those having a narrower or wider central angle may be used.
- an arc-shaped support portion 6 of 60 ° or more and 170 ° or less is formed. Those that have been performed are preferred. However, the larger the arc-shaped support portion is, the larger the load on the wafer can be dispersed and the occurrence of slip can be suppressed.
- the scooping-up e-mail transport jig 31 two opposed notches are required. However, by disposing the two support members opposite to each other as described above, the e-mail transport can be easily performed. There is also an advantage that it can be easily performed. It goes without saying that a suction jig can also be used.
- the method of manufacturing such a heat treatment boat 10 is not particularly limited, but it can be manufactured relatively easily by, for example, the following method.
- the support members 3 and 4 have an arc-shaped cross section as shown in FIG. 2, and their outer peripheral radii are substantially equal to the radii of the top plate 1 and the bottom plate 2. Then, the column members 3, 4 whose diameter is larger than the radius of the wafer to be heat-treated and whose inner peripheral radius is smaller than the radius of the wafer are manufactured.
- the central angle ⁇ of the arc can be determined in consideration of the shape of the aerial transfer jig.For example, if the lower surface of the aerial is picked up by a jig and conveyed, the central angle ⁇
- the support members 3 and 4 having a cross section may be used.
- the method of manufacturing the top plate 1, the bottom plate 2, and the arc-shaped support members 3 and 4 itself is not particularly limited, but in the case of the silicon-a-wafer heat treatment boat 10, the material is, for example, stone.
- the use of English glass, single crystal silicon, polycrystalline silicon, etc. can prevent the contamination of wafers.
- the material is based on a ceramic material such as silicon carbide (SiC), it will not only prevent It is preferable because it is extremely excellent in properties.
- center angle is about 120 ° as described above, for example, two sets of molded cylinders are vertically divided into three equal parts to make three sets (for three heat treatment boats).
- the support members 3 and 4 can be obtained, and the material cost can be reduced.
- the two arc-shaped support members 3 and 4 thus produced are placed between the top plate 1 and the bottom plate 2. Then, they are arranged opposite to each other so that the arcs of the cross section face each other and form a cylinder, and are fixed to the top plate 1 and the bottom plate 2 respectively.
- the fixing means is not particularly limited, and may be any method such as bonding with a binder, fitting, and screwing.
- the support members 3, 4 After fixing the arc-shaped support members 3, 4 between the top plate 1 and the bottom plate 2, the support members 3, 4 are subjected to a directional force to insert an e-beam, and the grooves 8 are formed by cutting. An arc-shaped support 6 is formed inside.
- Such a grooving machine is subjected to heat treatment smaller than the outer radii of the column members 3 and 4.
- a grooving machine equipped with a disk-shaped circumferential blade (diamond cutter) 30 larger than the radius of the A8. Can be suitably used.
- the groove 8 When forming the groove 8, the groove 8 is cut from the notch between the two support members toward the center axis G of the boat 10, and the groove 8 is cut until the center axis of the boat 10 and the center axis of the circumferential blade 30 match.
- a groove 8 is formed in each of the support members 3 and 4, and the side where the circumferential blade 30 is inserted is smaller than the diameter of the wafer.
- a groove 8 having a large width is formed, and an arc-shaped support portion 6 having an inner diameter smaller than the diameter of the wafer and a larger outer diameter is formed inside each of the support members 3 and 4.
- a through-hole 5 is formed by cutting from the outer peripheral side of each of the support members 3, 4 with a circumferential blade having a smaller radius, and portions (support portions) 3a, Leave 3b, 4a, and 4b respectively. If the through holes 5 are formed at the same height as the respective grooves 8 as described above, they act as vents for promoting the flow of the atmosphere gas during the heat treatment, and also promote the transfer of heat, as described above. ⁇ The uniform heat treatment can be applied to the wafer. Further, if the through holes 5 are individually formed as described above, the ventilation holes 5 can be formed at the same height as each groove 8 without disconnecting each support portion 6.
- a through-hole is not particularly limited, and may be a circle or a square at the same height as the groove 8, but from the direction of inserting the wafer as described above.
- a wide through-hole 5 can be easily formed by making another directional force into the groove 8 at the same height position as the groove 8 so as to penetrate the groove.
- the method for forming the grooves 8 and the through holes 5 as described above is not limited to a groove cutting machine using the circumferential blade 30 of a diamond cutter, but can be similarly processed with the same accuracy. If so, a method such as a laser beam machine, a high-pressure jet stream, or a lathe may be used.
- FIGS. 7 (a) and 7 (b) are diagrams showing another method of manufacturing the heat treatment boat according to the present invention.
- support members 43 and 44 having an arc-shaped cross section and having a beam formed on the outer side (outer peripheral surface) are prepared.
- Each of the strut members 43, 44 has two beams 49a, 49b formed in the longitudinal direction of the member at substantially the center and one end of the arc, respectively.
- the outer radii of the protrusions that become the beams 49a, 49b are the top plate 1,
- the radius of the bottom plate 2 should be substantially the same as that of the bottom plate 2, and the outer radius of the portion other than the beam should be smaller than the radius of the top plate 1 and the like and larger than the radius of the wafer.
- the column members 43, 44 having such a shape are arranged between the top plate 1 and the bottom plate 2 so as to face each other and fixed in a cylindrical shape.
- a circumferential blade having a radius larger than the inner radius of the strut members 43, 44 and smaller than the outer radius of the beam 49a, 49b, FIG.
- the directional force to insert the wafer is cut to form a groove.
- the size of the circumferential blade should be the same as or slightly larger than the outer radius of the support members 43 and 44 excluding the beams 49a and 49b (a size that allows cutting to the boundary with the beams 49a and 49b). Is preferred. In this way, an arc-shaped support portion is formed inside each of the support members 43 and 44, and a portion other than the beam is penetrated.
- the arc-shaped support portion 46 integrated with the support portions 43a, 43b, 44a, and 44b from the same material and the through-hole 45 are simultaneously formed. Can be formed.
- the beams 49a and 49b that were not acted as the pillars support the entire boat, and the inner portions formed by forming grooves in the pillar members 43 and 44 are particularly arcuate with a wide support area. ⁇ It becomes the e-cha support 46.
- the through holes 45 formed between the pillars 43a, 43b, 44a, 44b function as ventilation holes.
- the through-holes (vents) 45 are formed at the same height as each groove, respectively. Since the support portions 46 of the support members 43 and 44 are not disconnected, the e-aerator can be supported by two arc-shaped support portions along the lower peripheral edge.
- strut members with a center angle of 20 ° or more and 100 ° or less are used, and these are arranged in a cylindrical shape between the top plate 1 and the bottom plate 2 and placed inside each strut member in the same manner as above.
- An arc-shaped support may be formed respectively. If three or more arc-shaped strut members having such a relatively small center angle are arranged at a predetermined interval, notches between the strut members are increased, so that air permeability is improved, and the center angle is relatively small. Small support members have the advantage that they are easy to manufacture.
- SiC silicon carbide
- the top plate is a hollow disk with an outer diameter (diameter) of 330 mm, the inner diameter (diameter) of 270 mm, and a thickness of 4 mm.
- the bottom plate is a disk of (diameter) 330 mm and a thickness of 5 mm. Each was made of SiC.
- the two arc-shaped support members were fixed by bonding with a carbon-based binder.
- the outer periphery of each strut member and the outer periphery of the top plate / bottom plate coincide with each other, and the angle A formed by one end of each strut member and the center axis G of the boat is 60 °. did.
- the groove is formed by a groove cutting carrole equipped with a circumferential edge of a diamond cutter having a diameter of 303mm. A machine was used.
- an angle A / formed by the direction in which the circumferential blade enters, the center axis G of the boat, and one end a of the support member is inserted into the grooving machine. 2 was set to 30 °.
- the vertical width of the groove is set to 6.6 mm
- the thickness of the support formed between the grooves is set to 3.0 mm
- the number of grooves is set to 95
- the center of the circumferential blade is set to the center axis G of the boat.
- the integrated member is grooved so that the angle B between the direction of entry of the circumferential blade, the center axis G of the boat, and one end a of the support member is 85 °.
- Fixed to the machine In this case, a circumferential blade with a diameter of 200 mm was used, and the support member was cut through the same height as the previously formed groove from the direction in which the e-head was to be inserted. In this way, 95 through-holes (vents) having a width of 70 mm were formed in each of the two support members.
- chamfering is performed on the edges of the support surfaces of the respective support portions.
- corners (6b in FIG. 6) where the support surfaces and the end surfaces of the support portions intersect are We chamfered R15.
- a SiC_CVD coat film of about ⁇ ⁇ m was formed.
- the surface of this SiC_CVD coated film has Ra of about ⁇ , and there is a risk of slipping due to point contact occurring on a minute convex surface.Therefore, the support surface is polished until Ra becomes about 0.03 / im. Smoothing was performed.
- the support member has an outer radius of 154 mm, an inner radius of 147 mm, and a central angle of 120.
- Two silicon carbide (SiC) members having a circular arc shape and a length of 930 mm were produced.
- the beam located at one end of the outer peripheral surface has a center angle of 15 ° and the beam near the center has a center angle of 20 °. Yes.
- the two support members thus produced were divided into a top plate, which is an SiC hollow disk having an outer diameter of 330 mm, an inner diameter of 270 mm, and a thickness of 4 mm, and a bottom plate, which is a SiC disk having a diameter of 330 mm and a thickness of 5 mm. , And were placed in a cylindrical shape facing each other and fixed using a binder.
- the outer periphery of the beam part of each strut member was made to coincide with the outer periphery of the top plate Z bottom plate, and the opposite end of each strut member was connected to the center axis G of the boat. The position was adjusted so that the angle A that could be formed at that time was 60 °.
- the integrated member was immersed in molten Si to impregnate Si at grain boundaries of SiC.
- a groove cutting machine equipped with a circumferential edge of a diamond cutter having a diameter of 310 mm was used.
- the member integrated as described above is set on the grooving machine such that the angle A / 2 formed by the circumferential blade entry direction, the boat center axis G, and one end a of the support member is 30 °,
- the vertical width of the groove was set to 6.6 mm
- the thickness of the support formed between the grooves was set to 3. Omm
- the number of grooves was set to 95.
- insert the circumferential blade until the center of the circumferential blade coincides with the center axis G of the boat to form a groove as shown in Fig. 7 (b), and inside the e-shaft support part, Through holes (vents) were formed between the beams.
- R15 chamfers were made at the corners where the support surface and the end surface of the support part intersect.
- a mirror-polished silicon wafer having a diameter of 300 mm and a thickness of 779 ⁇ m was prepared.
- a vertical heat treatment boat 10 having an arc-shaped support portion as shown in FIG. 1 manufactured in Example 1 was used as the heat treatment boat.
- the present invention is not limited to the above embodiment.
- the above embodiment is simple
- the present invention is not limited to those having substantially the same configuration as the technical idea described in the claims of the present invention, and exhibiting the same operation and effect as those described above.
- Technical scope is not limited to those having substantially the same configuration as the technical idea described in the claims of the present invention, and exhibiting the same operation and effect as those described above.
- the number of arc-shaped support members and the size of the central angle are not limited to those described above, and may be appropriately determined in consideration of the shape of the wafer transfer jig and the like. Further, the arc-shaped support members may have different center angles, or the intervals between the support members may be different.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2004800200712A CN1823407B (zh) | 2003-07-16 | 2004-07-13 | 一种热处理用立式晶舟及其制造方法 |
KR1020067000810A KR101083825B1 (ko) | 2003-07-16 | 2004-07-13 | 열처리용 종형 보트 및 그 제조방법 |
US10/563,986 US7484958B2 (en) | 2003-07-16 | 2004-07-13 | Vertical boat for heat treatment and method for producing the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-275657 | 2003-07-16 | ||
JP2003275657 | 2003-07-16 | ||
JP2003-300527 | 2003-08-25 | ||
JP2003300527A JP4506125B2 (ja) | 2003-07-16 | 2003-08-25 | 熱処理用縦型ボート及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005008764A1 true WO2005008764A1 (ja) | 2005-01-27 |
Family
ID=34082358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/009960 WO2005008764A1 (ja) | 2003-07-16 | 2004-07-13 | 熱処理用縦型ボート及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7484958B2 (ja) |
JP (1) | JP4506125B2 (ja) |
KR (1) | KR101083825B1 (ja) |
CN (1) | CN1823407B (ja) |
TW (1) | TW200509191A (ja) |
WO (1) | WO2005008764A1 (ja) |
Cited By (1)
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CN110931339A (zh) * | 2019-10-23 | 2020-03-27 | 深圳市拉普拉斯能源技术有限公司 | 半导体或光伏材料的加工装置 |
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JP1665228S (ja) * | 2019-11-28 | 2020-08-03 | ||
TWI735115B (zh) * | 2019-12-24 | 2021-08-01 | 力成科技股份有限公司 | 晶圓儲存裝置及晶圓承載盤 |
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JP1700778S (ja) * | 2021-03-15 | 2021-11-29 | ||
CN116516468B (zh) * | 2023-07-04 | 2023-10-13 | 苏州优晶光电科技有限公司 | 多片碳化硅籽晶涂层同时处理的装置和方法 |
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- 2004-07-13 KR KR1020067000810A patent/KR101083825B1/ko active IP Right Grant
- 2004-07-13 CN CN2004800200712A patent/CN1823407B/zh active Active
- 2004-07-13 WO PCT/JP2004/009960 patent/WO2005008764A1/ja active Application Filing
- 2004-07-15 TW TW093121186A patent/TW200509191A/zh unknown
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CN110931339A (zh) * | 2019-10-23 | 2020-03-27 | 深圳市拉普拉斯能源技术有限公司 | 半导体或光伏材料的加工装置 |
CN110931339B (zh) * | 2019-10-23 | 2022-04-22 | 深圳市拉普拉斯能源技术有限公司 | 半导体或光伏材料的加工装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1823407A (zh) | 2006-08-23 |
TW200509191A (en) | 2005-03-01 |
US20060199133A1 (en) | 2006-09-07 |
KR101083825B1 (ko) | 2011-11-18 |
KR20060039903A (ko) | 2006-05-09 |
JP4506125B2 (ja) | 2010-07-21 |
US7484958B2 (en) | 2009-02-03 |
TWI348725B (ja) | 2011-09-11 |
CN1823407B (zh) | 2011-03-16 |
JP2005051187A (ja) | 2005-02-24 |
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