CN102560683B - 一种防止硅片在热处理过程中崩边的方法及石英舟 - Google Patents
一种防止硅片在热处理过程中崩边的方法及石英舟 Download PDFInfo
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- CN102560683B CN102560683B CN201010622618.3A CN201010622618A CN102560683B CN 102560683 B CN102560683 B CN 102560683B CN 201010622618 A CN201010622618 A CN 201010622618A CN 102560683 B CN102560683 B CN 102560683B
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- silicon chip
- quartz boat
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 45
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 239000010453 quartz Substances 0.000 title claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000008569 process Effects 0.000 title claims abstract description 10
- 238000010438 heat treatment Methods 0.000 title claims abstract description 9
- 210000005056 cell body Anatomy 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 abstract description 4
- 230000035882 stress Effects 0.000 abstract description 3
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 238000012797 qualification Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Abstract
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Claims (1)
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CN201010622618.3A CN102560683B (zh) | 2010-12-29 | 2010-12-29 | 一种防止硅片在热处理过程中崩边的方法及石英舟 |
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CN201010622618.3A CN102560683B (zh) | 2010-12-29 | 2010-12-29 | 一种防止硅片在热处理过程中崩边的方法及石英舟 |
Publications (2)
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CN102560683A CN102560683A (zh) | 2012-07-11 |
CN102560683B true CN102560683B (zh) | 2015-09-30 |
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CN201010622618.3A Active CN102560683B (zh) | 2010-12-29 | 2010-12-29 | 一种防止硅片在热处理过程中崩边的方法及石英舟 |
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Families Citing this family (1)
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CN106601594A (zh) * | 2016-12-29 | 2017-04-26 | 上海合晶硅材料有限公司 | 硅片表面长多晶的方法 |
Citations (9)
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JPS5797622A (en) * | 1980-12-11 | 1982-06-17 | Toshiba Corp | Diffusion heat treating jig of semiconductor substrate |
JP3223847B2 (ja) * | 1996-06-28 | 2001-10-29 | 住友金属工業株式会社 | シリコン単結晶ウェーハの熱処理方法と製造方法 |
CN1538536A (zh) * | 2003-04-14 | 2004-10-20 | ������������ʽ���� | Led灯及其制造方法 |
CN1823407A (zh) * | 2003-07-16 | 2006-08-23 | 信越半导体股份有限公司 | 一种热处理用立式晶舟 |
CN2900559Y (zh) * | 2005-12-26 | 2007-05-16 | 北京有色金属研究总院 | 一种减少多晶硅生长工艺崩边的石英舟 |
CN1992191A (zh) * | 2005-12-26 | 2007-07-04 | 北京有色金属研究总院 | 一种减少多晶硅生长工艺崩边的石英舟 |
CN201030303Y (zh) * | 2007-04-28 | 2008-03-05 | 北京交通大学 | 一种六棱圆底石英舟及配套盛放装置 |
CN201128778Y (zh) * | 2007-11-23 | 2008-10-08 | 北京有色金属研究总院 | 一种防止硅片在生长多晶过程中产生崩边的石英舟 |
CN101556931A (zh) * | 2009-05-19 | 2009-10-14 | 上海宏力半导体制造有限公司 | 晶舟 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2911023B2 (ja) * | 1994-08-31 | 1999-06-23 | 信越石英株式会社 | シリコンウエハ熱処理用石英ガラス治具およびその使用方法 |
US7055702B1 (en) * | 2000-06-06 | 2006-06-06 | Saint-Gobain Ceramics & Plastics, Inc. | Slip resistant horizontal semiconductor wafer boat |
CN201210490Y (zh) * | 2008-06-13 | 2009-03-18 | 张彩根 | 一种半导体器件热处理用半圆硅舟 |
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2010
- 2010-12-29 CN CN201010622618.3A patent/CN102560683B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797622A (en) * | 1980-12-11 | 1982-06-17 | Toshiba Corp | Diffusion heat treating jig of semiconductor substrate |
JP3223847B2 (ja) * | 1996-06-28 | 2001-10-29 | 住友金属工業株式会社 | シリコン単結晶ウェーハの熱処理方法と製造方法 |
CN1538536A (zh) * | 2003-04-14 | 2004-10-20 | ������������ʽ���� | Led灯及其制造方法 |
CN1823407A (zh) * | 2003-07-16 | 2006-08-23 | 信越半导体股份有限公司 | 一种热处理用立式晶舟 |
CN2900559Y (zh) * | 2005-12-26 | 2007-05-16 | 北京有色金属研究总院 | 一种减少多晶硅生长工艺崩边的石英舟 |
CN1992191A (zh) * | 2005-12-26 | 2007-07-04 | 北京有色金属研究总院 | 一种减少多晶硅生长工艺崩边的石英舟 |
CN201030303Y (zh) * | 2007-04-28 | 2008-03-05 | 北京交通大学 | 一种六棱圆底石英舟及配套盛放装置 |
CN201128778Y (zh) * | 2007-11-23 | 2008-10-08 | 北京有色金属研究总院 | 一种防止硅片在生长多晶过程中产生崩边的石英舟 |
CN101556931A (zh) * | 2009-05-19 | 2009-10-14 | 上海宏力半导体制造有限公司 | 晶舟 |
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Address after: 100088, 2, Xinjie street, Beijing Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088, 2, Xinjie street, Beijing Applicant before: GRINM Semiconductor Materials Co., Ltd. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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