CN2900559Y - 一种减少多晶硅生长工艺崩边的石英舟 - Google Patents
一种减少多晶硅生长工艺崩边的石英舟 Download PDFInfo
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- CN2900559Y CN2900559Y CN 200520146920 CN200520146920U CN2900559Y CN 2900559 Y CN2900559 Y CN 2900559Y CN 200520146920 CN200520146920 CN 200520146920 CN 200520146920 U CN200520146920 U CN 200520146920U CN 2900559 Y CN2900559 Y CN 2900559Y
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CN 200520146920 CN2900559Y (zh) | 2005-12-26 | 2005-12-26 | 一种减少多晶硅生长工艺崩边的石英舟 |
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CN 200520146920 CN2900559Y (zh) | 2005-12-26 | 2005-12-26 | 一种减少多晶硅生长工艺崩边的石英舟 |
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CN2900559Y true CN2900559Y (zh) | 2007-05-16 |
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CN 200520146920 Expired - Fee Related CN2900559Y (zh) | 2005-12-26 | 2005-12-26 | 一种减少多晶硅生长工艺崩边的石英舟 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100459090C (zh) * | 2005-12-26 | 2009-02-04 | 北京有色金属研究总院 | 一种减少多晶硅生长工艺崩边的石英舟 |
CN102560683A (zh) * | 2010-12-29 | 2012-07-11 | 有研半导体材料股份有限公司 | 一种防止硅片在热处理过程中崩边的方法及石英舟 |
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2005
- 2005-12-26 CN CN 200520146920 patent/CN2900559Y/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100459090C (zh) * | 2005-12-26 | 2009-02-04 | 北京有色金属研究总院 | 一种减少多晶硅生长工艺崩边的石英舟 |
CN102560683A (zh) * | 2010-12-29 | 2012-07-11 | 有研半导体材料股份有限公司 | 一种防止硅片在热处理过程中崩边的方法及石英舟 |
CN102560683B (zh) * | 2010-12-29 | 2015-09-30 | 有研半导体材料有限公司 | 一种防止硅片在热处理过程中崩边的方法及石英舟 |
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Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20120110 Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS Effective date: 20120110 |
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Effective date of registration: 20120110 Address after: 100088, 2, Xinjie street, Beijing Patentee after: GRINM Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: General Research Institute for Nonferrous Metals |
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Granted publication date: 20070516 Termination date: 20121226 |