WO2004107416A1 - 露光装置及びデバイスの製造方法 - Google Patents
露光装置及びデバイスの製造方法 Download PDFInfo
- Publication number
- WO2004107416A1 WO2004107416A1 PCT/JP2004/007445 JP2004007445W WO2004107416A1 WO 2004107416 A1 WO2004107416 A1 WO 2004107416A1 JP 2004007445 W JP2004007445 W JP 2004007445W WO 2004107416 A1 WO2004107416 A1 WO 2004107416A1
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- WIPO (PCT)
- Prior art keywords
- optical system
- support member
- projection optical
- exposure apparatus
- frame
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
Definitions
- the present invention relates to an exposure apparatus used in a transfer step in a lithography process for manufacturing a highly integrated semiconductor circuit element.
- stepper step-and-repeat type reduction projection exposure apparatus
- step-and-scan type scanning projection exposure apparatus Ie, so-called scanning / stepper, etc.
- the demand for finer resist patterns formed on a wafer has been increasing along with the increase in the capacity of semiconductor memories and the progress of high-speed and large-scale integration of CPU processors. Is required. Since the exposure apparatus is used for mass production of devices, a high throughput is inevitably required. Therefore, the exposure accuracy has been improved by shortening the exposure wavelength and improving the resolution by increasing the numerical aperture (NA) of the projection optical system, improving the controllability of the position of the wafer stage or reticle stage, and increasing the acceleration. At the same time, throughput has been improved.
- NA numerical aperture
- the present invention has been made in view of such circumstances, and by providing a compact and highly rigid frame, it is possible to further increase the NA of the projection optical system and increase the height of the stage without increasing the size of the exposure apparatus.
- An object of the present invention is to provide an exposure apparatus capable of forming a fine pattern in response to acceleration.
- a first aspect of the present invention is an exposure apparatus (ST) which supports a projection optical system (30) for irradiating exposure light emitted from a mask onto a substrate, and a projection optical system (30).
- the position for supporting (110) is above the position where the first support member (110) supports the projection optical system (30).
- the support structure can be configured with high rigidity.
- the position where the support structure (200) supports the first support member (110) is approximately the same height as the position of the center of gravity (32) of the projection optical system (30). In this case, the position where the support force is applied to the first support member and the position of the center of gravity of the projection optical system are substantially the same height. It is possible to minimize the deformation of the first support member.
- the supporting structure (200) includes a vibration isolator (150) and supports the first support member (1 10) via the vibration isolator (150). Since the generation of vibration for rotation about the center can be suppressed, the vibration of the first support member can be easily and effectively suppressed by the vibration isolator.
- the apparatus further includes a sensor support (130) on which the projection optical system sensor (131) is disposed, wherein the sensor support (130) is disposed on the lower surface side of the first support member (110). Since it is not necessary to support the projection optical system which is increasing in size with an unsuitable sensor support as a support structure, the rigidity of the exposure apparatus can be increased and the first support member can be formed compact.
- the apparatus further includes a mask stage (20) for holding a mask, and a second support member (120) for supporting the mask stage (20), wherein the second support member (120) has a support structure (200).
- the first support member (110) is connected to the first support member (110) at a position for supporting the first support member (110)
- the second support member is formed in a substantially arch shape and the first support member is formed in a substantially inverted arch shape. Is joined, the rigidity of the main body frame formed by joining the first support member and the second support member can be improved. Further, when the weight is larger than the first support member (110) 1 and the second support member (120), the center of gravity of the main body frame can be lowered.
- the first support member (110) is made of a material having a higher specific gravity than the second support member (120), the weight of the first support member can be more easily increased than the weight of the second support member. can do.
- the second support member when the material of the second support member (120) is a metal matrix composite material, the second support member can achieve high rigidity and light weight.
- the temperatures of the first support member and the second support member are kept constant. It is less affected by the ambient temperature.
- the support structure (200) includes a floor portion (212) supporting the substrate stage (40), a plurality of columns (213, 221) supporting the first support member (110), and a column (213, 221). 221) has at least one beam portion (222) connecting the upper portions thereof to each other, and the beam portion (222) and the first support member (1 10) are projected light beams. If the position where the academic system (30) is supported is arranged at approximately the same height, the rigidity can be improved because the support structure is formed in a rigid frame structure. Further, since the beam portion and the position for supporting the projection optical system have substantially the same height, it is possible to form a large opening on the side surface of the support structure, thereby performing maintenance of the substrate stage. .
- the struts (2 13, 22 1) are vertically divided at the center in the height direction, and are connected at the center, so that the struts are less likely to concentrate stresses due to vibration. Since the connecting portions can be arranged, the rigidity of the support structure can be maintained high.
- a second aspect of the present invention is a device manufacturing method, including a lithographic step, wherein the exposure apparatus (ST) according to the first invention is used in the lithographic step.
- an exposure apparatus having a frame structure with less vibration, strength, and easy vibration proofing is used, so that it is possible to increase the numerical aperture of the projection optical system and increase the acceleration of the stage. Pattern miniaturization can be achieved.
- FIG. 1 is a diagram schematically illustrating the configuration of an exposure apparatus.
- FIG. 2 is a perspective view of the exposure apparatus.
- FIG. 3 is an exploded perspective view of the exposure apparatus.
- FIG. 4 is a diagram schematically showing a conventional exposure apparatus. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a diagram schematically illustrating a configuration of the exposure apparatus ST.
- the exposure apparatus ST moves a reticle (mask) and a wafer (substrate) synchronously in a one-dimensional direction (here, the X-axis direction which is the horizontal direction in FIG. 1), and forms a circuit formed on the reticle.
- a reticle mask
- a wafer substrate
- a circuit formed on the reticle is projected through the projection optical system 30.
- This is a step-and-scan type scanning exposure apparatus that transfers data to a cut area, that is, a so-called scanning stepper.
- the exposure apparatus ST measures the reticle position by detecting an illumination optical system 10 for illuminating the reticle with illumination light from the light source 50, a reticle stage 20 for holding the reticle, and a reticle alignment mark formed on the reticle.
- Reticle alignment 25 projection optics 30 that projects the illumination light emitted from the reticle onto the wafer, wafer stage 40 that holds the wafer, reticle stage 20 and projection optics 30 And a base frame 200 supporting the main body frame 100 and the wafer stage 40.
- the illumination optical system 10 includes a housing 11 and optical components including a relay lens system, an optical path bending mirror, and a condenser lens system arranged inside the housing 11 in a predetermined positional relationship.
- the illumination optical system 10 is supported by a vertically extending illumination system support member 12 fixed to the upper surface of a second frame 120 constituting the main body frame 100.
- a light source 50 and an illumination optical system separation unit 51 that are separated from the exposure unit ST main body so as not to transmit vibration are arranged on the side of the exposure unit ST main unit (right side in Fig. 1). Is done.
- the laser beam emitted from the light source 50 enters the illumination optical system 10 via the illumination optical system separation unit 51, and the cross-sectional shape of the laser beam is shaped and the illumination has an almost uniform illuminance distribution.
- Light exposure light
- the reticle stage (mask stage) 20 is levitated and supported on a top surface of a second frame 120 constituting the main body frame 100 via a non-contact bearing (not shown) (for example, a gas static pressure bearing).
- the reticle stage 20 includes a reticle fine movement stage that holds the reticle, a reticle coarse movement stage that moves together with the reticle fine movement stage with a predetermined stroke in the X-axis direction that is the scanning direction, and a linear motor that moves these.
- the reticle fine movement stage has a rectangular opening, and the reticle is held by vacuum suction or the like by a reticle suction mechanism provided around the opening.
- a laser interferometer (not shown) is provided at the end of the second mount 120.
- the two-dimensional position and rotation angle of the reticle fine movement stage and the position of the fine movement stage in the X-axis direction are measured with high accuracy, and the position and speed of the fine movement stage are controlled based on the measurement results.
- the reticle alignment 25 has an alignment optical system for observing the reticle held on the reticle stage 20 and an imaging device arranged on a base member, and the reticle stage 2 extends along the Y direction which is a non-scanning direction. It is provided above reticle stage 20 so as to straddle zero, and is supported on second mount 120. Then, a reticle alignment mark formed on the reticle is detected by the alignment optical system and the imaging device arranged on the base member. In addition, a rectangular opening is provided at a position on the base member corresponding to the irradiation position of the laser beam by the illumination optical system 10, and the laser beam irradiates the reticle through this opening.
- the base member of the reticle alignment 25 on which the alignment optical system and the imaging device are arranged is made of a non-magnetic material, for example, an austenitic stainless steel, in consideration of the electromagnetic effect on the linear motor of the reticle stage 20. It consists of:
- the projection optical system 30 is telecentric on both the object side (reticle side) and the image plane side (wafer side), and a predetermined projection magnification is, for example, a reduction system that reduces by 1 ⁇ 5). Used. For this reason, when the reticle is irradiated with illumination light (ultraviolet pulse light) from the illumination optical system 10, an imaging light flux from a portion of the circuit pattern region formed on the reticle illuminated by the ultraviolet pulse light is emitted. Is incident on the projection optical system 30, and a partial inverted image of the circuit pattern is formed in the center of the field of view on the image plane side of the projection optical system 30 every time each pulse of the ultraviolet pulse light is irradiated.
- illumination light ultraviolet pulse light
- the image is limited to a rectangular shape (polygon).
- the projected partial inverted image of the circuit pattern is reduced and transferred to the resist layer on the surface of one of the plurality of shot areas on the wafer arranged on the imaging plane of the projection optical system 30. Is done.
- a flange 31 is provided on the outer periphery of the projection optical system 30 to support the projection optical system 30.
- the flange 31 is disposed below the center of gravity 32 of the projection optical system 30 due to design restrictions of the projection optical system 30.
- the numerical aperture ⁇ of the projection optical system 30 is increasing to, for example, 0.9 or more.
- the outer diameter and weight of the projection optical system 30 are increasing.
- the projection optical system 30 is inserted into a hole 113 provided in the first frame 110 constituting the main body frame 100, and is supported via a flange 31.
- Wafer stage (substrate stage) 40 is arranged inside base frame 200.
- the wafer stage 40 continuously moves in the X-axis direction by, for example, a linear motor or the like, and moves stepwise in the X-axis direction and the Y-axis direction. Further, inside the wafer stage 40, the wafer is moved in the Z-axis direction, the 0x direction (rotation direction around the X-axis), and the 0y direction (Y-axis) in order to perform leveling and focusing of the wafer.
- a sample stage (not shown) for micro-driving in three degrees of freedom (rotational direction) is incorporated.
- the wafer stage 40 is provided with a counter mass that moves in a direction opposite to the stage in order to cancel a reaction force generated when the stage is driven. As the size of wafers increases (diameter of 300 mm, 16 inches, etc.), the shape and weight of wafer stage 40 tend to increase.
- the exposure apparatus ST having such a configuration is arranged such that, under illumination light, an image of a pattern in an illumination area of a reticle is projected onto a wafer having a resist applied to the surface thereof at a projection magnification of 3 via a projection optical system 30. Is projected onto the slit-shaped exposure area (the area conjugate to the illumination area). In this state, the reticle and the wafer are synchronously moved in a predetermined scanning direction (X-axis direction), so that the reticle pattern is transferred to one shot area on the wafer.
- X-axis direction predetermined scanning direction
- FIG. 1 is a diagram schematically illustrating a configuration of the exposure apparatus ST.
- FIG. 2 is a perspective view of the exposure apparatus ST, and
- FIG. 3 is an exploded perspective view of the exposure apparatus ST.
- FIG. 4 is a diagram schematically showing a conventional exposure apparatus.
- the main body frame 100 supports a first frame 110 (first support member) for supporting the projection optical system 30 and the like, and a reticle stage 20 and the like arranged above the projection optical system 30. And a second frame 120 (second support member).
- first frame 110 first support member
- second frame 120 second support member
- the first mount 110 is formed slightly larger than the outer diameter of the cylindrical projection optical system 30.
- a barrel support plate 1 1 1 provided with a hole 1 1 3 and a barrel support plate 1 1 1 formed on the outer periphery of the barrel support plate 1 1 1 above the base frame 2 It is composed of a second gantry 120 and a first gantry connecting part 112 connected to the second gantry 120. It is desirable that the number of the first gantry connection portions 112 is three in consideration of the stability of the first gantry 110, but it is not limited thereto. Further, the lens barrel support plate 111 and the first mount connecting portion 112 are not integrally connected by a fastening means or the like, but are formed integrally.
- the projection optical system 30 is inserted into the hole 113 of the lens barrel support plate 111, and the flange 31 of the projection optical system is supported on the upper surface of the lens barrel support plate 111. Therefore, when viewed from the side of the exposure apparatus ST (in the direction of the paper surface in FIG. 1), the first mount 110 is formed in an inverted arch shape and supports the projection optical system 30.
- the first frame 110 needs to have high rigidity as a structure, and it is desirable that the first frame 110 is heavier than the second frame 120 in order to lower the center of gravity of the main body frame 100 as a whole. . Therefore, in the present embodiment, the first mount 110 is composed of FCD450, which is a kind of steel, and has a larger weight than the second mount 120. FCD 450 has a Young's modulus of 168 GPa, which is suitable for the first base 110. The specific gravity of FCD 450 is 7.1, and since there are many types of structural materials having a lower specific gravity, the specific gravity of FCD 450 is smaller than that of FCD 450 as a material for the second frame 120. Material can be selected. As a result, the weight of the first mount 110 can be made larger than that of the second mount 120 more easily. (Details of the second frame 120 will be described later.)
- the flange 31 provided on the projection optical system 30 is disposed below the center of gravity of the projection optical system 30 due to design restrictions of the projection optical system 30. Therefore, as in the conventional case (see FIG. 4), when the flat first base 51 (the H-type projection optical system 30 is supported), the position of the center of gravity 32 of the projection optical system 30 becomes the first base 51 0 It will be located above.
- the first gantry 110 and the projection optical system 30 are likely to be deformed. Also, when lateral vibration is applied from the outside, vibration occurs in which the projection optical system 30 rotates around the center of gravity 32, and the vibration of the main body frame 500 is complicated. That is, the lateral vibration of the first gantry 5 10 causes so-called coupled vibration that causes the projection optical system 30 to rotate and vibrate. Further, when the first base 110 and the projection optical system 30 vibrate, the position of the rotation center differs depending on the vibration frequency. In other words, the rotation center of the low frequency vibration is near the center of gravity of the projection optical system 30, whereas the rotation center of the high frequency vibration is near the support position of the first frame 110.
- the position of the center of gravity 32 of the projection optical system 30 and the position where lateral vibration is applied to the first gantry 110 is disposed at substantially the same height, so that the deformation of the first gantry 110 and the projection optical system 30 can be suppressed.
- the rotational vibration of the projection optical system 30 around the center of gravity 32 caused by the lateral vibration of the first gantry 110 is suppressed, and the lateral vibration of the first gantry 110 and the rotation of the projection optics 30 are suppressed. Vibration and non-coupling can be achieved.
- the position of the vibration rotation center for each vibration frequency is substantially Match. This facilitates anti-vibration measures, and makes it possible to effectively suppress the vibration of the exposure apparatus ST.
- the anti-vibration unit 150 since the rotational vibration of the projection optical system 30 is reduced, the anti-vibration unit 150 only needs to remove the vibration in the translation direction and the vertical direction, which facilitates the vibration isolation (vibration isolation). Become.
- the second mount 1 2 0 extends from the lower surface of the outer peripheral portion of the support plate 1 2 1 on which the reticle stage 20 is mounted, and extends downward from the lower surface, and is connected to the first mount 1 10. It is composed of two gantry connecting parts 1 2 2. It is desirable that the number of the second mount connecting portions 122 is three in consideration of the stability of the second mount 120, but the present invention is not limited to this. Further, the support board 122 and the second frame connecting part 122 are not integrally connected with each other by a fastening means or the like, but are formed integrally. Therefore, the second gantry 120 is formed in an arch shape symmetrically with the first gantry 110.
- the second gantry connection section 122 is connected to the first gantry connection section 112 of the first gantry 110. It is fastened using a bolt or the like.
- the second gantry connection part and the first gantry connection part are defined by a projection optical system 30 supported by the first gantry 110 and a reticle stage 20 supported by the second gantry 120. It is adjusted so as to have a positional relationship and fastened.
- the second mount 120 should have high rigidity as a structure, and should be lighter than the first mount 110 in order to lower the center of gravity of the main frame 100. Therefore, the second mount 120 of the present embodiment is made of a metal matrix composite (hereinafter, referred to as MMC) in view of rigidity and weight.
- MMC metal matrix composite
- the MMC material is a composite material in which a ceramic is combined with a metal base material, for example, as a reinforcing material, and has both the properties of a metal base and the properties of a reinforcing material.
- the second mount 120 uses an MMC material composed of 70% aluminum (A1) and 30% silicon carbide (SiC). This MMC material has physical properties such as a Young's modulus of 125 GPa and a specific gravity of 2.8, thereby realizing high rigidity and light weight of the second mount 120.
- the main body frame 100 is formed by connecting the first base 110 formed in an inverted arch shape and the second base 120 formed in an arch shape.
- the rigidity of the main body frame 100 can be improved as compared with the frame 500.
- the conventional body frame 500 (see FIG. 4) has a structure in which the first and second flat plates 5 10 and 5 20 are connected by a plurality of columns 5 2 A connecting portion that connects each of the pedestals 5 10, 5 20 and the supporting column 5 22 is disposed at a portion where the accompanying stress tends to concentrate (that is, at both ends of the supporting column 5 22). Since the connecting portions are connected by bolts or the like, the rigidity is lower than that of a continuous structure. Therefore, the rigidity of the main body frame 500 depends on the connection part having low rigidity.
- the rigidity of the main body frame 100 can be improved as compared with the conventional main body frame 500. Also, since the weight of the first frame 110 is made larger than the weight of the second frame 120, the center of gravity of the main frame 100 can be lowered, and the main frame 100 can be stably supported. .
- the material of the first mount 110 is The specific gravity is larger than the specific gravity of the material of the second frame 120, and the weight of the first frame 11 ° can be more easily made larger than the weight of the second frame 120.
- the main body frame 100 by constructing the main body frame 100 by connecting the first base 110 formed in an inverted arch shape and the second base 120 formed in an arch shape, maintenance is easier than in the past. It is possible to do it.
- the first frames 110 and 510 and the second frames 120 and 520 are disconnected from each other, and the second frames 1 and 520 are projected. It is necessary to lift up above system 30.
- the projection optical system 30 can be detached from the exposure apparatus ST even in a place where the height to the ceiling cannot be sufficiently secured, such as a clean room where the exposure apparatuses ST and ST2 are installed. This makes it possible to reduce maintenance time and costs, improve the operating rate of the exposure system ST, and increase production efficiency.
- the main body frame 100 composed of the first frame 110 and the second frame 120 mainly defines the distance between the projection optical system 30 and the reticle placed on the reticle stage 20, so that Even when the temperature changes, the distance between the projection optical system 30 and the reticle does not change and needs to be stable.
- the Te embodiment smell, as described above, from the viewpoint of the rigidity and weight balance of the structure, ⁇ as the material of the first frame 100 (FCD450: thermal expansion coefficient 11. 6x10- 6 ZK) adopted Then, MMC material (A 1 (70%) + SiC (30%): Thermal expansion coefficient 14.4 x 10 ⁇ 6 / K) is adopted.
- thermal expansion coefficient 1 x 10 to VK thermal expansion coefficient 1 x 10 to VK
- the temperature controller 70 is provided to thermally stabilize the first and second frames 110 and 120 even when the ambient temperature changes.
- the temperature control device 70 includes a heat sink 71 and a temperature control fluid supply unit 72 arranged at predetermined positions (details will be described later) of the first and second frames 110 and 120.
- the temperature control fluid supply unit 72 adjusts the temperature of the temperature control fluid with high accuracy, and supplies the temperature to the heat sink 71.
- the heat sink 71 is a member in which a flow path through which the temperature control fluid flows is formed, and is in contact with the first frame 110 and the second frame 120. Then, the temperature-adjusted fluid that has passed through the heat sink 71 is returned to the temperature-adjusted fluid supply unit 72, where the temperature is adjusted again.
- the temperature of the second stand 120 are kept constant and are not affected by the ambient temperature.
- the heat sink 71 is located at a place where temperature change is to be suppressed in the first frame 110 and the second frame 120, that is, when the temperature of the portion is changed, the distance between the projection optical system 30 and the reticle is changed. Is placed in a place that has a large effect on Specifically, as shown in FIG. 1, in the first mount 110, a portion connecting the lens barrel support plate 111 and the first mount connecting portion 112 is attached to the second mount 112. In the case of 0, heat sinks 71 are respectively arranged at portions connecting the support plate 122 and the second gantry connecting portion 122.
- the place where the heat sink 71 is arranged is not limited to the above, and may be arranged in another place. For example, to prevent the effect of the deformation of the first frame 110 from affecting the projection optical system 30 and to stabilize the projection optical system 30 thermally, the projection on the lens barrel support plate 11 1 A heat sink 71 may be provided near the support of the optical system 30.
- the heat sink 71 is connected to the first frame 110 and the second frame 110. Although it was composed of a separate member from the stand 120, a flow path was formed inside the first stand 110 and the second stand 120, and the temperature was controlled from the temperature control fluid supply unit 72 in this flow path. It may be configured to supply a fluid.
- HFE Hydrophilt Fluoroether
- Fluorinert registered trademark
- water may be used I do not care.
- the first mount 110 supports a sensor support 130 for disposing a projection optical system sensor (for example, an autofocus sensor) 131.
- a projection optical system sensor for example, an autofocus sensor
- the sensor support 130 is formed by an impeller so as not to adversely affect the measurement of the projection optical system sensor 131.
- Invar is a nickel a steel material (N i) containing about 3 6%, as linear expansion coefficient described above Ri der less LXL 0- 6 Bruno K, typical stainless steel (SUS 3 0 4) Since it is extremely small, about 110, the problem that the measurement position of the projection optical sensor 13 1 changes due to changes in the ambient temperature or the measured value deviates from the true value can be minimized. it can.
- the hole 511 provided in the first flat plate 5110 is formed sufficiently larger than the outer shape of the projection optical system 30.
- a cylindrical sensor support 5350 having a flange is inserted into 13, and a projection optical system 30 is inserted inside the sensor support 5300 to thereby allow the first mount 5 1 0 indirectly supported the projection optical system 30.
- the reason why the projection optical system 30 is supported via the sensor support 5330 is that the sensor support 5.30 on which the projection optical system sensor 131 is disposed and the projection optical system 30 are connected.
- the longitudinal elastic modulus of Invar is about 115 Gpa, which is lower than that of general steel materials (about 160 to 200 Gpa). Therefore, it is not suitable as a structural material for supporting heavy objects.
- the outer diameter and the weight of the projection optical system 30 tend to increase as the numerical aperture NA of the projection optical system 30 increases. Therefore, the projection optical system 30 is supported via the sensor support 530. Therefore, it is necessary to increase the size of the sensor support 530 and increase the diameter of the hole 511 into which the sensor support 530 is inserted.
- the size of the first gantry 5 10 increases, but the size and weight of the exposure apparatuses ST and ST 2 cannot always be increased without limitation due to restrictions on installation locations and transportation. Therefore, the structure for supporting the projection optical system 30 via the sensor support 530 is becoming more and more disadvantageous.
- the first mount 110 a part that bears the weight of the projection optical system 30 and a part that bears the measurement stability of the projection optical system sensor 131 are separated. Specifically, the projection optical system 30 is directly supported by the first mount 110, and the sensor support 130 is installed on the lower surface of the first mount 110. Thus, the diameter of the hole portion 113 formed in the first frame 110 can be kept to a minimum, so that the size of the first frame 110 can be reduced.
- a kinematic mount is provided between the projection optical system 30 and the first base 110 so that the tilt angle of the projection optical system 30 can be adjusted.
- the heat sink 71 may be disposed on the first mount 110, as described above, or a fluorine-based material may not be provided in the first mount 110.
- the active liquid may be circulated to cool or control the temperature.
- the base frame 200 is placed substantially horizontally on the floor F of the clean room via the feet 211.
- the base frame 200 is composed of a lower frame 210 and an upper frame 220.
- the lower frame 210 includes a floor portion 212 on which the wafer stage 40 is placed, and a column 2 13 extending vertically from the upper surface of the floor portion 212 by a predetermined length.
- the floor portion 2 12 and the column 2 13 are not integrally connected by fastening means or the like, but are formed integrally.
- the upper frame 220 includes the same number of columns 2 21 as the columns 2 13, and beam sections 2 2 2 connecting the columns 2 2 1 at the upper portion thereof.
- the support 221 and the beam 222 are not integrally connected by a fastening means or the like, but are integrally formed.
- the base frame 200 has a so-called ramen structure (see Fig. 3), and the floor 6 Rigidity can be improved as compared with the conventional base frame 600 composed of only the columns 62 extending vertically from the upper surface of the floor section 61 and the floor section 61.
- each column 2 13 and 2 2 1 A continuous structure is placed at the base of the joint, and the connection part with low rigidity is placed at a position where stress is unlikely to concentrate. In this way, the rigidity of the base frame 200 can be improved as compared with the conventional base frame 200.
- each column 2 13, 2 21 can be made thinner than the conventional column 62, or a circular or square column can be used as a plate.
- the shape or can be made L-shaped.
- the reason that the base frame 200 is formed into the upper frame 220 and the lower frame 210 in the upper and lower two parts is due to the restriction on the processing of the base frame 200, and the upper frame and the lower two parts are formed. By doing so, the processing of the lower frame 210 and the upper frame 220 (particularly, the processing on the inner surface side) is facilitated. Further, the lower frame 210 and the upper frame 220 may be integrally formed (structured) and then cut into two upper and lower parts, or each may be formed separately.
- the reason that the conventional base frame 600 does not have a beam portion for connecting the columns 602 is that the length (height) of the column 602 is short. This is because there is an inconvenience that the opening for maintenance of the wafer stage 40 arranged in the base frame 600 after assembling of Step 2 becomes small.
- the position for supporting the main body frame 100 (the position for installing the anti-vibration unit 150) is set. It is arranged at a higher position than before, so that the columns 2 13 and 2 2 1 are longer, and even if the beam 2 2 2 is provided, it is necessary to secure enough opening for maintenance of the wafer stage 40. Becomes possible. Also, by arranging the beam 2 2 2 and the lens barrel support 1 1 1 of the first frame 1 1 10 so as to be located at approximately the same height (see FIGS. 1 and 2), the opening can be formed. It is possible to secure a sufficiently large size.
- a reticle loader 61, a wafer slot 62, a control system (not shown), and the like are arranged in front of the exposure apparatus ST (left side in FIG. 1).
- the veloper ⁇ 0 When the veloper ⁇ 0 is arranged, maintenance and the like are performed through the opening provided in the side direction of the base frame 200 (the paper surface direction in FIG. 1) and the opening formed in the main body frame 100. Therefore, the shapes of the base frame 200 and the main body frame 100 can be effectively used.
- the shape and weight of the wafer stage 40 tend to increase as the size of the wafer increases. For this reason, in the conventional main body frame 500, it is necessary to dispose the support column 402 outside the wafer stage 40, so that the distance between the support columns 600 becomes long and the first base 5 10 Since the size is increased, the rigidity of the first gantry 5 10 is reduced, and the weight of the exposure apparatus ST 2 is also increased.
- the struts 2 13 and 22 1 can be formed thinner than before, or can be formed in a plate shape or an L-shape. Can be arranged more freely than before. Therefore, enlargement of the basic frame 200 can be minimized. Further, by disposing the anti-vibration unit 150 on the beam portion 222, the first base 110 can be supported without being oversized. Therefore, an increase in the weight of the exposure apparatus ST can be minimized.
- the operation procedure described in the above-described embodiment, or the various shapes and combinations of the constituent members are merely examples, and various changes can be made based on the process conditions and design requirements without departing from the gist of the present invention. is there.
- the present invention includes, for example, the following changes.
- the reticle stage is not limited to a single-holder reticle stage using one reticle as in the present embodiment, but may be a double-holder reticle stage that holds two reticle on one movable stage, It is also good as a double reticle stage where two reticle are placed on a movable stage independent of each other.
- a step-and-repeat type exposure apparatus that exposes a mask pattern while the mask and the substrate are stationary and sequentially moves the substrate in steps may be used.
- a proximity exposure apparatus that exposes a mask pattern by bringing a mask and a substrate into close contact without using a projection optical system is used. May be used.
- the use of the exposure apparatus is not limited to the exposure apparatus for manufacturing semiconductor devices.
- an exposure apparatus for a liquid crystal that exposes a liquid crystal display element pattern to a square glass plate, a thin film magnetic head, and the like. It can be widely applied to an exposure apparatus for manufacturing a semiconductor device.
- the light source of the exposure apparatus to which the present invention is applied includes g-line (436 nm), i-line (365 nm), KrF excimer laser (248 nm), and ArF excimer laser ( 1 9 3 nm), F 2 not only laser (1 5 7 nm), it is possible that uses charged particle beams such as X-ray or electron beam.
- charged particle beams such as X-ray or electron beam.
- a thermionic emission type lanthanum hexaborite (LaB 6 ) or tantalum (Ta) can be used as an electron gun.
- a structure using a mask may be used, or a pattern may be formed directly on a substrate without using a mask.
- the magnification of the projection optical system is not limited to a reduction system, and may be any one of an equal magnification and an enlargement system.
- the projection optical system when using a far ultraviolet rays such as an excimer laser using a material which transmits far ultraviolet rays such as quartz and fluorite as sulfate material, catadioptric system, or in the case of using the F 2 laser or X-ray It is preferable to use a refraction type optical system (in this case, use a reflection type reticle).
- a refraction type optical system in this case, use a reflection type reticle.
- an electron optical system including an electron lens and a deflector may be used as the optical system. It goes without saying that the optical path through which the electron beam passes is in a vacuum state.
- the stage may be a type that moves along a guide or a guideless type that does not have a guide.
- a planar motor is used as the stage driving device, one of the magnet unit (permanent magnet) and the armature unit is connected to the stage, and the other of the magnet unit and the armature unit is connected to the moving surface of the stage. It may be provided on the side (base).
- the reaction force generated by the movement of the wafer stage may be mechanically released to the floor (ground) by using a frame member, as described in Japanese Patent Application Laid-Open No. 8-166475.
- the reaction force generated by the movement of the reticle stage may be mechanically released to the floor (ground) by using a frame member, as described in Japanese Patent Application Laid-Open No. H08-330224.
- the exposure apparatus to which the present invention is applied is configured such that various subsystems including the respective constituent elements recited in the claims of the present application maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. It is manufactured by assembling. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical For, adjustments are made to achieve electrical accuracy.
- the process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an individual assembly process for each subsystem before the assembly process from these various subsystems to the exposure apparatus.
- the semiconductor device has a process of designing the function and performance of a device, a process of manufacturing a mask (reticle) based on the design steps, a process of manufacturing a wafer from a silicon material, and a reticle by the exposure apparatus of the above-described embodiment. It is manufactured through wafer processing, device assembly (including dicing, bonding, and packaging) that exposes the pattern onto the wafer, and inspection.
- the present invention is an exposure apparatus, comprising: a projection optical system that irradiates exposure light emitted from a mask onto a substrate; a first support member that supports the projection optical system; and a support member that supports the first support member.
- a supporting structure wherein the position at which the supporting structure supports the first supporting member is higher than the position at which the first supporting member supports the projection optical system.
- vibration of the projection optical system is reduced, rigidity of the main body frame including the first support member as a component is improved, and the support structure is configured to have high rigidity. It becomes possible.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005506520A JPWO2004107416A1 (ja) | 2003-05-27 | 2004-05-25 | 露光装置及びデバイスの製造方法 |
US11/285,604 US7397534B2 (en) | 2003-05-27 | 2005-11-23 | Exposure apparatus and device manufacturing method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2003-148665 | 2003-05-27 | ||
JP2003148665 | 2003-05-27 | ||
JP2004-118861 | 2004-04-14 | ||
JP2004118861 | 2004-04-14 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/285,604 Continuation US7397534B2 (en) | 2003-05-27 | 2005-11-23 | Exposure apparatus and device manufacturing method |
Publications (1)
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WO2004107416A1 true WO2004107416A1 (ja) | 2004-12-09 |
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ID=33492417
Family Applications (1)
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PCT/JP2004/007445 WO2004107416A1 (ja) | 2003-05-27 | 2004-05-25 | 露光装置及びデバイスの製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7397534B2 (ja) |
JP (1) | JPWO2004107416A1 (ja) |
KR (1) | KR20060009957A (ja) |
WO (1) | WO2004107416A1 (ja) |
Cited By (2)
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WO2006104127A1 (ja) * | 2005-03-29 | 2006-10-05 | Nikon Corporation | 露光装置、露光装置の製造方法及びマイクロデバイスの製造方法 |
CN104345573A (zh) * | 2013-08-02 | 2015-02-11 | 上海微电子装备有限公司 | 一种曝光装置的内部框架结构 |
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GB2445573B (en) * | 2007-01-10 | 2009-08-26 | Vistec Lithography Ltd | Apparatus support structure |
JP5061013B2 (ja) * | 2008-04-03 | 2012-10-31 | エスアイアイ・ナノテクノロジー株式会社 | 装置構造及びその構造を備えた走査型プローブ顕微鏡 |
NL2002888A1 (nl) * | 2008-06-12 | 2009-12-15 | Asml Netherlands Bv | Lithographic apparatus, composite material and manufacturing method. |
JP5420601B2 (ja) | 2011-07-25 | 2014-02-19 | 株式会社日立ハイテクノロジーズ | 荷電粒子装置 |
WO2017118508A1 (en) * | 2016-01-07 | 2017-07-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3280127B1 (de) * | 2016-08-05 | 2020-07-22 | Hexagon Technology Center GmbH | Kamerasystem |
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Also Published As
Publication number | Publication date |
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US7397534B2 (en) | 2008-07-08 |
KR20060009957A (ko) | 2006-02-01 |
JPWO2004107416A1 (ja) | 2006-07-20 |
US20060077368A1 (en) | 2006-04-13 |
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