WO2004030012A2 - Procede et appareil offrant une protection amelioree des soufflets dans un systeme de traitement au plasma - Google Patents

Procede et appareil offrant une protection amelioree des soufflets dans un systeme de traitement au plasma Download PDF

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Publication number
WO2004030012A2
WO2004030012A2 PCT/IB2003/004667 IB0304667W WO2004030012A2 WO 2004030012 A2 WO2004030012 A2 WO 2004030012A2 IB 0304667 W IB0304667 W IB 0304667W WO 2004030012 A2 WO2004030012 A2 WO 2004030012A2
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WO
WIPO (PCT)
Prior art keywords
recited
bellows shield
coupled
cylindrical wall
bellows
Prior art date
Application number
PCT/IB2003/004667
Other languages
English (en)
Other versions
WO2004030012A3 (fr
Inventor
Hidehito Saigusa
Taira Takase
Kouji Mitsuhashi
Hiroyuki Nakayama
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to AU2003269394A priority Critical patent/AU2003269394A1/en
Priority to JP2004539374A priority patent/JP4627659B2/ja
Publication of WO2004030012A2 publication Critical patent/WO2004030012A2/fr
Publication of WO2004030012A3 publication Critical patent/WO2004030012A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present invention relates to an improved component for a plasma processing system and, more particularly, to a bellows shield employed in a plasma processing system to protect a bellows.
  • IC integrated circuits
  • plasma is formed within the plasma reactor under vacuum conditions by heating electrons to energies sufficient to sustain ionizing collisions with a supplied process gas.
  • the heated electrons can have energy sufficient to sustain dissociative collisions and, therefore, a specific set of gases under predetermined conditions (e.g., chamber pressure, gas flow rate, etc.) are chosen to produce a population of charged species and chemically reactive species suitable to the particular process being performed within the chamber (e.g., etching processes where materials are removed from the substrate or deposition processes where materials are added to the substrate).
  • components of the plasma processing system are coated with a protective barrier.
  • a protective barrier For example, components fabricated from aluminum can be anodized to produce a surface layer of aluminum oxide, which is more resistant to the plasma.
  • a consumable or replaceable component such as one fabricated from silicon, quartz, alumina, carbon, or silicon carbide, can be inserted within the processing chamber to protect the surfaces of more valuable components that would impose greater costs during frequent replacement.
  • the present invention provides an improved bellows shield for a plasma processing system, wherein the design and fabrication of the bellows shield advantageously addresses the above-identified shortcomings.
  • the plasma processing system comprises a cylindrical wall having an inner surface, an outer surface, a first end, and a second end.
  • the first end of the cylindrical wall can comprise an attachment flange, wherein the attachment flange comprises an interior surface coupled to the inner surface of the cylindrical wall and configured to mate with the substrate holder, an inner radial surface, and an exterior surface coupled to the outer surface of the cylindrical wall.
  • the second end of the cylindrical wall can comprise an end surface.
  • the attachment flange of the bellows shield can further include a plurality of fastening receptors for receiving fastening devices in order to attach the bellows shield to the substrate holder.
  • Each fastening receptor can comprise an entrant cavity, an exit through-hole, and an inner receptor surface.
  • the bellows shield can further comprise a protective barrier formed on a plurality of exposed surfaces of the bellows shield facing the processing plasma.
  • the plurality of exposed surfaces of the bellows shield comprises the end surface of the cylindrical wall, the outer surface of the cylindrical wall, and the exterior surface of the attachment flange contiguous with the outer surface of the cylindrical wall.
  • the present invention provides a method of producing a bellows shield in the plasma processing system comprising the steps: fabricating the bellows shield; anodizing the bellows shield to form a surface anodization layer on the bellows shield; machining the exposed surfaces on the bellows shield to remove the surface anodization layer; and forming a protective barrier on the exposed surfaces.
  • the present invention may optionally include machining of other parts not actually exposed to the plasma. Such parts may be machined in order to provide a contact free from the anodization layer (e.g., in order to provide a better mechanical or electrical contact). Such parts may include, but are not limited to, an interior surface of the attachment flange and an inner receptor surface of the plurality of fastening receptors.
  • the present invention provides another method of producing the bellows shield in the plasma processing system comprising the steps: fabricating the bellows shield; masking the exposed surfaces on the bellows shield to prevent formation of a surface anodization layer; anodizing the bellows shield to form the surface anodization layer on the bellows shield; and forming a protective barrier on the exposed surfaces.
  • the present invention may optionally include masking of other parts not actually exposed to the plasma. Such parts may be masked in order to provide a contact free from the anodization layer (e.g., in order to provide a better mechanical or electrical contact). Such parts may include, but are not limited to, an interior surface of the attachment flange and an inner receptor surface of the plurality of fastening receptors.
  • the present invention also provides a combined method of machining and masking to provide bare exposed surfaces on which to form the protective barrier.
  • FIG. 1 shows a simplified block diagram of a plasma processing system comprising a bellows shield according to an embodiment of the present invention
  • FIG. 2 shows a cross-sectional view of a bellows shield for a plasma processing system according to an embodiment of the present invention
  • FIG. 3 shows a partial plan view of a bellows shield for the plasma processing system according to an embodiment of the present invention
  • FIG. 4 shows an exploded view of an attachment flange of the bellows shield for the plasma processing system according to an embodiment of the present invention
  • FIG. 5 shows an exploded view of an end surface on a second end of the bellows shield for the plasma processing system according to an embodiment of the present invention
  • FIG. 6 presents a method of producing a bellows shield for the plasma processing system according to an embodiment of the present invention
  • FIG. 7 presents a method of producing a bellows shield for the plasma processing system according to another embodiment of the present invention.
  • FIG. 8 presents a method of producing a bellows shield for the plasma processing system according to another embodiment of the present invention.
  • a plasma processing system 1 is depicted in FIG. 1 comprising a plasma processing chamber 10, an upper assembly 20, an electrode plate 24, a substrate holder 30 for supporting a substrate 35, and a pumping duct 40 coupled to a vacuum pump (not shown) for providing a reduced pressure atmosphere 11 in plasma processing chamber 10.
  • Plasma processing chamber 10 can facilitate the formation of a processing plasma in a process space 12 adjacent substrate 35.
  • the plasma processing system 1 can be configured to process substrates of various sizes (e.g., 200 mm substrates, 300 mm substrates, or larger).
  • upper assembly 20 can comprise at least one of a cover, a gas injection assembly, and an upper electrode impedance match network.
  • the electrode plate 24 can be coupled to an RF source.
  • the upper assembly 20 comprises a cover and an electrode plate 24, wherein the electrode plate 24 is maintained at an electrical potential equivalent to that of the plasma processing chamber 10.
  • the plasma processing chamber 10, the upper assembly 20, and the electrode plate 24 can be electrically connected to ground potential.
  • Plasma processing chamber 10 can, for example, further comprise a deposition shield 14 for protecting the plasma processing chamber 10 from the processing plasma in the process space 12, and an optical viewport 16.
  • Optical viewport 16 can comprise an optical window 17 coupled to the backside of an optical window deposition shield 18, and an optical window flange 19 can be configured to couple optical window 17 to the optical window deposition shield 18. Sealing members, such as O-rings, can be provided between the optical window flange 19 and the optical window 17, between the optical window 17 and the optical window deposition shield 18, and between the optical window deposition shield 18 and the plasma processing chamber 10. Optical viewport 16 can, for example, permit monitoring of optical emission from the processing plasma in process space 12.
  • Substrate holder 30 can, for example, further comprise a vertical translational device 50 surrounded by a bellows 52 coupled to the substrate holder 30 and the plasma processing chamber 10, and configured to seal the vertical translational device 50 from the reduced pressure atmosphere 11 in plasma processing chamber 0.
  • a bellows shield 54 can, for example, be coupled to the substrate holder 30 and configured to protect the bellows 52 from the processing plasma.
  • Substrate holder 10 can, for example, further be coupled to at least one of a focus ring 60, and a shield ring 62.
  • a baffle plate 64 can extend about a periphery of the substrate holder 30.
  • Substrate 35 can be, for example, transferred into and out of plasma processing chamber 10 through a slot valve (not shown) and chamber feed-through (not shown) via robotic substrate transfer system where it is received by substrate lift pins (not shown) housed within substrate holder 30 and mechanically translated by devices housed therein. Once substrate 35 is received from substrate transfer system, it is lowered to an upper surface of substrate holder 30. [0031] Substrate 35 can be, for example, affixed to the substrate holder 30 via an electrostatic clamping system.
  • substrate holder 30 can, for example, further include a cooling system including a re-circulating coolant flow that receives heat from substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
  • gas can, for example, be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thermal conductance between substrate 35 and substrate holder 30.
  • a cooling system including a re-circulating coolant flow that receives heat from substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
  • gas can, for example, be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thermal conductance between substrate 35 and substrate holder 30.
  • Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures.
  • heating elements such as resistive heating elements, or thermo-electric heaters/coolers can be included.
  • substrate holder 30 can comprise an electrode through which RF power is coupled to the processing plasma in process space 12.
  • substrate holder 30 can be electrically biased at a RF voltage via the transmission of RF power from a RF generator (not shown) through an impedance match network (not shown) to substrate holder 30.
  • the RF bias can serve to heat electrons to form and maintain plasma.
  • the system can operate as a reactive ion etch (RIE) reactor, wherein the chamber and upper gas injection electrode serve as ground surfaces.
  • RIE reactive ion etch
  • a typical frequency for the RF bias can range from 1 MHz to 100 MHz and is preferably 13.56 MHz.
  • RF systems for plasma processing are well known to those skilled in the art.
  • the processing plasma formed in process space 12 can be formed using a parallel-plate, capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, any combination thereof, and with and without DC magnet systems.
  • the processing plasma in process space 12 can be formed using electron cyclotron resonance (ECR).
  • ECR electron cyclotron resonance
  • the processing plasma in process space 12 is formed from the launching of a Helicon wave.
  • the processing plasma in process space 12 is formed from a propagating surface wave.
  • bellows shield 54 comprises a cylindrical wall 80, the cylindrical wall 80 comprising an inner surface 82, an outer surface 84, a first end 86, and a second end 88.
  • the first end 86 of cylindrical wall 80 comprises an attachment flange 90 coupled to the cylindrical wall 80 and configured to attach the bellows shield 54 to the substrate holder 30, and a through-hole 92 to accommodate an upper surface of the substrate holder 30.
  • the second end 88 of the cylindrical wall 80 comprises an end surface 94.
  • FIG. 4 provides an expanded view of the attachment flange 90 coupled to cylindrical wall 80 and configured to couple the bellows shield 54 to the substrate holder 30.
  • the attachment flange 90 comprises an interior surface 96, an inner radial surface 97, and an exterior surface 98. Additionally, the interior surface 96 can comprise a mating surface 99 and the exterior surface can comprise a mounting surface 91 that are configured to couple the bellows shield 54 to the substrate holder 30.
  • attachment flange 90 can, for example, comprise a plurality of fastening receptors 100, each fastening receptor 100 coupled to the interior surface 96 and the exterior surface 98, and configured to receive fastening devices (not shown) (such as bolts) to couple bellows shield 54 to substrate holder 30.
  • the fastening receptors 100 can comprise an entrant cavity 102, an exit through-hole 104, and an inner receptor surface 106.
  • the number of fastening receptors 100 formed within bellows shield 54 can range from 0 to 100. Desirably, the number of fastening receptors 100 can range from 5 to 20; and, preferably, the number of fastening receptors 100 is at least 6.
  • FIG. 5 provides an expanded view of the end surface 94 forming the second end 88 of the cylindrical wall 80.
  • the bellows shield 54 further comprises a protective barrier 150 formed on a plurality of exposed surfaces 110 of the bellows shield 54.
  • the plurality of exposed surfaces 110 can comprise the end surface 94 of the cylindrical wall 80, the outer surface 84 of the cylindrical wall 80, and the exterior surface 98 of the attachment flange 90 contiguous with the outer surface 84 of the cylindrical wall 80.
  • the exposed surfaces 110 can further comprise all of the surfaces remaining on the bellows shield 54.
  • the protective barrier 150 can comprise a compound including an oxide of aluminum such as AI 2 O 3 . In another embodiment of the present invention, the protective barrier 150 can comprise a mixture of AI 2 O 3 and Y 2 O 3 . In another embodiment of the present invention, the protective barrier 150 can comprise at least one of a Ill-column element (column III of periodic table) and a Lanthanon element. In another embodiment of the present invention, the Ill-column element can comprise at least one of Yttrium, Scandium, and Lanthanum. In another embodiment of the present invention, the Lanthanon element can comprise at least one of Cerium, Dysprosium, and Europium.
  • the compound forming protective barrier 150 can comprise at least one of Yttria (Y 2 O 3 ), Sc 2 O 3 , Sc 2 F 3 , YF 3 , La 2 O 3 , CeO 2 , Eu 2 O 3 , and DyO 3 .
  • the protective barrier 150 formed on bellows shield 54 comprises a minimum thickness, wherein the minimum thickness can be specified as constant across at least one of the plurality of exposed surfaces 110. In another embodiment, the minimum thickness can be variable across at least one of the plurality of exposed surfaces 110.
  • the minimum thickness can be constant over a first portion of at least one of the plurality of exposed surfaces 110 and variable over a second portion of at least one of the plurality of exposed surfaces 110 (i.e., a variable thickness can occur on a curved surface, on a corner, or in a hole).
  • the minimum thickness can range from 0.5 micron to 500 micron.
  • the minimum thickness ranges from 100 micron to 200 micron; and, preferably, the minimum thickness is at least 20 micron.
  • FIG. 6 presents a method of producing the bellows shield in the plasma processing system described in FIG. 1 according to an embodiment of the present invention.
  • a flow diagram 300 begins in 310 with fabricating the bellows shield 54 (as described above).
  • Fabricating the bellows shield can comprise at least one of machining, casting, polishing, forging, and grinding.
  • each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
  • the techniques for machining a component using, for example, a mill or a lathe, are well known to those skilled in the art of machining.
  • the bellows shield 54 can, for example, be fabricated from aluminum.
  • the bellows shield is anodized to form a surface anodization layer.
  • the surface anodization layer comprises aluminum oxide (AI 2 O 3 ).
  • AI 2 O 3 aluminum oxide
  • Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
  • the surface anodization layer is removed from the exposed surfaces 110 using standard machining techniques.
  • additional non-exposed surfaces e.g., a mating surface of an interior surface of the attachment flange and an inner receptor surface of the plurality of fastening receptors
  • Such non-exposed surfaces may be machined in order to provide better mechanical or electrical contacts between those parts and the parts with which they are mated.
  • the protective barrier 150 is formed on the exposed surfaces 110.
  • a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
  • forming the protective barrier can further comprise polishing (or smoothing) the thermal spray coating.
  • polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
  • FIG. 7 presents a method of producing the bellows shield in the plasma processing system described in FIG. 1 according to another embodiment of the present invention.
  • a flow diagram 400 begins in 410 with fabricating the bellows shield 54 (as described above).
  • Fabricating the bellows shield can comprise at least one of machining, casting, polishing, forging, and grinding.
  • each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
  • the techniques for machining a component using, for example, a mill or a lathe, are well known to those skilled in the art of machining.
  • the bellows shield 54 can, for example, be fabricated from aluminum.
  • the exposed surfaces 110 are masked to prevent the formation of a surface anodization layer thereon.
  • additional non- exposed surfaces e.g., an interior surface of the attachment flange and an inner receptor surface of the plurality of fastening receptors
  • Such non- exposed surfaces may be masked in order to provide better mechanical or electrical contacts between those parts and the parts with which they are mated.
  • Techniques for surface masking and unmasking are well known to those skilled in the art of surface coatings and surface anodization.
  • the bellows shield is anodized to form a surface anodization layer on the remaining unmasked surfaces.
  • the surface anodization layer can comprise aluminum oxide (AI 2 O 3 ). Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
  • the protective barrier 150 is formed on the exposed surfaces 110.
  • a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
  • forming the protective barrier can further comprise polishing (or smoothing) the thermal spray coating.
  • polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
  • FIG. 8 presents a method of producing the electrode plate in the plasma processing system described in FIG. 1 according to another embodiment of the present invention.
  • a flow diagram 500 begins in 510 with fabricating the bellows shield 54 (as described above).
  • Fabricating the electrode plate can comprise at least one of machining, casting, polishing, forging, and grinding.
  • each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
  • the techniques for machining a component using, for example, a mill or a lathe, are well known to those skilled in the art of machining.
  • the electrode plate can, for example, be fabricated from aluminum.
  • a protective barrier is formed on the exposed surfaces 110 of the electrode plate.
  • a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
  • forming the protective barrier can further comprise polishing (or smoothing) the thermal spray coating.
  • polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
  • the processes of forming a protective barrier 150 on the exposed surfaces 110 can be modified to utilize a combination of machining and masking.
  • at least one exposed surface 110 is masked to prevent formation of the anodization layer thereon while other exposed surfaces 110 are anodized.
  • the exposed surfaces 110 that are unmasked are then machined, and the exposed surfaces that were masked are unmasked.
  • the protective barrier 150 can then be formed on all the exposed surfaces 110.
  • additional surfaces that are not exposed surfaces may also be machined during the method (e.g., in order to provide a better mechanical or electrical contact than we be formed with the anodization layer thereon.

Abstract

La présente invention se rapporte à une protection améliorée des soufflets dans un système de traitement au plasma, la conception et la fabrication de ladite protection des soufflets couplée à une électrode de support de substrat offrant une protection avantageuse des soufflets avec une érosion minimale.
PCT/IB2003/004667 2002-09-30 2003-09-29 Procede et appareil offrant une protection amelioree des soufflets dans un systeme de traitement au plasma WO2004030012A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003269394A AU2003269394A1 (en) 2002-09-30 2003-09-29 Improved bellows shield in a plasma processing system,and method of manufacture of such bellows shield
JP2004539374A JP4627659B2 (ja) 2002-09-30 2003-09-29 プラズマ処理システムにおける改良されたベローズシールドのための装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/259,306 2002-09-30
US10/259,306 US7204912B2 (en) 2002-09-30 2002-09-30 Method and apparatus for an improved bellows shield in a plasma processing system

Publications (2)

Publication Number Publication Date
WO2004030012A2 true WO2004030012A2 (fr) 2004-04-08
WO2004030012A3 WO2004030012A3 (fr) 2004-12-16

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US (2) US7204912B2 (fr)
JP (1) JP4627659B2 (fr)
KR (1) KR100699636B1 (fr)
CN (1) CN100508103C (fr)
AU (1) AU2003269394A1 (fr)
WO (1) WO2004030012A2 (fr)

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US20040060656A1 (en) 2004-04-01
US20070125494A1 (en) 2007-06-07
KR20050053712A (ko) 2005-06-08
US7678226B2 (en) 2010-03-16
AU2003269394A8 (en) 2004-04-19
WO2004030012A3 (fr) 2004-12-16
JP4627659B2 (ja) 2011-02-09
US7204912B2 (en) 2007-04-17
CN1682345A (zh) 2005-10-12
AU2003269394A1 (en) 2004-04-19
JP2006501646A (ja) 2006-01-12
CN100508103C (zh) 2009-07-01
KR100699636B1 (ko) 2007-03-23

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