Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32192—Microwave generated discharge
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32192—Microwave generated discharge
  • H01J37/32211—Means for coupling power to the plasma
  • H01J37/32238—Windows
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

• the present invention relates to a plasma processing apparatus for generating plasma in a chamber in which a workpiece is arranged and performing plasma processing on the workpiece.
• the plasma processing apparatus includes a chamber 1 and an antenna unit 3 as a high-frequency supply unit so as to cover an open upper side thereof.
• Antenna section 3 includes an antenna cover 3a made of an aluminum alloy, a slow wave plate 3b made of a ceramic, and an antenna plate 3c made of a copper alloy.
• the antenna plate 3c is provided with a plurality of elongated through holes 20 as slot holes.
• a top plate 15 made of a dielectric material such as quartz or ceramic is arranged between the antenna unit 3 and the chamber 1.
• the “top plate” here is sometimes called “dielectric window” or “microwave transmission window”.
• the top plate 15 is fixed to the chamber 1 with a top plate holding ring 16.
• the antenna section 3 is fixed by an antenna section holding ring 17.
• a susceptor 7 is disposed in the chamber 1.When performing plasma processing, the substrate 11 to be processed is placed on the upper surface of the susceptor 7, and then the chamber 1 is evacuated by the vacuum pump 9 to generate gas. A reaction gas is introduced from an inlet (not shown).
• the high frequency generator 5 generates a high frequency. This high frequency is transmitted to the antenna unit 3 through the waveguide 6, distributed through the slow wave plate 3 b to a certain range by the plurality of slot holes 20 of the antenna electrode 3 c, and supplied to the chamber 1 side. Is done.
• the high frequency passes through the top plate 15 to turn the reaction gas into plasma.
• plasma 13 is generated in chamber 1 and plasma processing is performed on substrate 11.
• the waveguide 6 is a coaxial waveguide composed of the inner conductor 6a and the outer conductor 6b, but there may be other types of waveguides.
• the higher the plasma density the higher the frequency in the chamber 1.
• the ratio of high-frequency reflection at the interface between the top plate 15 and the plasma 13 during supply is increased.
• the top plate 15 When the top plate 15 is thinner than a certain extent, the high frequency reflected at the interface returns from the top plate 15 to the high frequency generator 5 again along the waveguide 6, and the antenna unit 3 and the high frequency generator 5 The light is reflected again toward the antenna unit 3 by a matching device (not shown) usually arranged between the antenna unit 3 and the antenna unit 3. As a result, the electromagnetic field in the waveguide 6 from the antenna unit 3 to the matching unit becomes very strong, which causes abnormal discharge and power loss.
• the reflected high frequency does not return along the waveguide 6 but repeats reflection on the outer surface of the top plate 15, and is confined in the top plate 15. It tends to be a standing wave.
• the strong electric field region 18 in the top 15 appears locally in the radial direction of the top 15.
• FIG. 22 shows only the left half.
• the arrows in FIG. 22 indicate the direction of high frequency propagation. In this case, a stronger electric field is generated near the center of the top plate 15. As a result, the influence is reflected in the chamber 1.
• Figure 23 shows the plasma density distribution in chamber 1 at this time. That is, the plasma density increases near the center of the chamber 1 and the uniformity of the plasma density is impaired. If the uniformity of the plasma density is impaired, the uniformity of the plasma treatment is impaired.
• the top plate 15 is made of a dielectric and is actually made of a material such as quartz or ceramic. Also have limitations. For example, when quartz is used for a top plate in a plasma processing apparatus for plasma processing a semiconductor wafer of ⁇ 30 O mm, the thickness of the top plate must be at least 40 mm from the viewpoint of securing mechanical strength. However, with such a thickness, standing waves easily rise inside the top plate. Unwanted standing waves rise inside the top plate, reducing the power supply efficiency. T JP03 / 06901 The uniformity of plasma density in Yamba is impaired, and the uniformity of plasma processing is impaired. Disclosure of the invention
• a chamber for performing plasma processing therein a top plate made of a dielectric material that covers the upper side of the chamber, And a high-frequency supply means for supplying high-frequency waves into the chamber, wherein the top plate has therein a wave reflection means for reflecting high-frequency waves propagating inside the top plate.
• the wave reflecting means reflects high frequency waves propagating in the radial direction of the top plate.
• the wave reflecting means is disposed substantially at the center of the top plate.
• the wave reflection means partitions the top plate.
• an antenna plate having a slot hole is provided between the top plate and the high-frequency supply means, and the slot hole is located in each area of the top plate divided by the wave reflection means.
• the high-frequency is individually supplied through the slot holes for each of the divided areas to control the electric field strength. This makes it possible to control the stored energy in each area of the tabletop more reliably.
• the top plate has a concave portion recessed from at least one of the front and back surfaces, and the wave reflecting means is a side wall portion of the concave portion.
• the concave portion has a ring shape.
• the concave portion is on a surface of the top plate facing the high frequency supply means.
• the recess is on a surface of the top plate facing the chamber.
• plasma can be introduced into the recess, so that the distance between the plasma generating surface and the antenna unit can be reduced, and as a result, the power supply efficiency to the plasma can be increased.
• the wave reflecting means is a plasma that has penetrated into the circling portion. By employing this configuration, the wave reflecting means can be realized by the plasma itself without providing a special member on the top plate.
• a reflection member made of a material different from the top plate is disposed inside the top plate, and a side wall of the reflection member is the wave reflection means.
• the length of a portion of the top plate sandwiched between the adjacent wave reflecting means is at least 1/2 times the wavelength when the high frequency wave propagates through the material of the top plate.
• the thickness of the top plate at the concave portion is It is less than half the wavelength when high frequency waves propagate through the material of the top plate.
• the thickness of the top plate at the concave portion is 1/4 or less of the wavelength when the high frequency wave propagates through the material of the top plate.
• a chamber for performing plasma processing therein a top plate made of a dielectric material that covers the upper side of the chamber, High-frequency supply means for supplying high-frequency waves into the chamber, and an antenna plate having a slot hole between the top plate and the high-frequency supply means, wherein the top plate has a thick portion and a thin portion.
• the slot hole is arranged at a position corresponding to the thin portion.
• FIG. 1 is a partial cross-sectional view of a plasma processing apparatus according to Embodiment 1 of the present invention.
• FIG. 2 is an explanatory diagram showing an electric field intensity distribution inside the top plate of the plasma processing apparatus according to the first embodiment of the present invention.
• FIG. 3 is a graph showing a plasma density distribution in a chamber of the plasma processing apparatus according to Embodiments 1 and 2 based on the present invention.
• FIG. 4 is a partial cross-sectional view of a first plasma processing apparatus according to Embodiment 2 of the present invention.
• FIG. 5 is an explanatory diagram showing an electric field intensity distribution inside the top plate of the first plasma processing apparatus according to the second embodiment of the present invention.
• FIG. 6 is a partial cross-sectional view of a second plasma processing apparatus according to Embodiment 2 of the present invention.
• FIG. 7 is a partial cross-sectional view of a third plasma processing apparatus according to Embodiment 2 of the present invention.
• FIG. 8 is a partial cross-sectional view of a fourth plasma processing apparatus according to Embodiment 2 of the present invention.
• FIG. 9 is a partial cross-sectional view of a fifth plasma processing apparatus according to Embodiment 2 of the present invention.
• FIG. 10 is a partial sectional view of a sixth plasma processing apparatus according to the second embodiment of the present invention.
• FIG. 11 is a first explanatory diagram of a method of arranging the reflecting members according to the second embodiment based on the present invention.
• FIG. 12 is a second explanatory diagram of how to arrange the reflecting members in the second embodiment according to the present invention.
• FIG. 13 is a partial cross-sectional view of the plasma processing apparatus according to the third embodiment of the present invention.
• FIG. 14 is an explanatory diagram showing the length of each part of the plasma processing apparatus according to Embodiments 1 to 3 based on the present invention.
• FIG. 15 is a partial cross-sectional view of the plasma processing apparatus according to the fourth embodiment of the present invention.
• FIG. 16 is a partial cross-sectional view of the plasma processing apparatus according to the fifth embodiment of the present invention.
• FIG. 17 is a partial cross-sectional view of the plasma processing apparatus according to the fifth embodiment of the present invention.
• FIG. 18 is a partial sectional view of a first modification of the plasma processing apparatus according to the fifth embodiment of the present invention.
• FIG. 19 shows a second modification of the plasma processing apparatus according to the fifth embodiment of the present invention. It is a fragmentary sectional view of a form example.
• FIG. 20 is an explanatory diagram of the effect of the present invention on the electric field concentration at the contact point between the top plate receiving portion and the top plate.
• FIG. 21 is a cross-sectional view of a plasma processing apparatus based on the prior art.
• FIG. 22 is an explanatory diagram showing an electric field intensity distribution inside the top plate of the plasma processing apparatus based on the conventional technology.
• FIG. 23 is a graph showing a plasma density distribution in a chamber of a plasma processing apparatus based on a conventional technique.
• FIG. 1 shows only a main part of the plasma processing apparatus. In the almost symmetrical part, the right half is omitted and only the left half is displayed.
• a reflection member 23 a is embedded in the center of the top plate 15.
• Reflecting member 2.3a is made of a conductor or a high dielectric substance.
• the top plate 15 has a concave portion dug down from the surface facing the antenna section 3 (the upper surface in the figure).
• the reflecting member 23a has a shape substantially filling the internal space of the concave portion, and is installed in a state of being accommodated in the concave portion.
• the reflecting member 23a may be fixed to the top plate 15 side, or may be fixed to the antenna unit 3 side.
• the reflecting member 23a is arranged to use the side wall as a wave reflecting means.
• FIG. 2 shows the distribution of the electric field intensity in the top plate 15 when a standing wave is generated in this plasma processing apparatus.
• the strong electric field region 18 is similar to the conventional example (see FIG. 22) in that it appears locally when viewed in the radial direction of the top 15, but is different from the conventional example in that Since the reflecting member 23a is arranged at the center of the part 15, the light is generated near the outer periphery. This is because high-frequency waves propagating in the radial direction inside the top plate 15 are reflected by the side wall of the reflecting member 23a, so that the high-frequency waves are prevented from converging at the center of the top plate 15. It is thought that it depends.
• the strong electric field region 18 in the top plate 15 can apply an electromagnetic wave more strongly to the plasma in the chamber space directly below the strong electric field region 18, so that the plasma density in that portion can be increased. it can. Therefore, when the position of the strong electric field region 18 in the top 15 moves toward the outer periphery of the top 15, the plasma density at the center of the chamber space decreases, and the plasma density distribution in the chamber 1 decreases. As shown by curve B in Fig. 3, it becomes more uniform than before. For comparison, FIG. 3 shows, as a curve A, the plasma density distribution in the chamber in a conventional plasma processing apparatus without a reflection member. Curve A is a repeat of what was shown in Figure 23.
• a plasma processing apparatus according to the second embodiment of the present invention will be described.
• a reflecting member 23 a is embedded in the center of a top plate 15.
• a reflecting member 23b is annularly arranged so as to surround the reflecting member 23a.
• the reflecting member 23b is arranged so that its side wall is used as wave reflecting means.
• FIG. 5 shows the distribution of the electric field intensity in the top plate 15 when a standing wave is generated in this plasma processing apparatus.
• an annular reflection member 23b is also arranged in the top plate 15, so that the top plate 15 is concentrically divided. Therefore, the position where the strong electric field region 18 can be generated is further limited as compared with the first embodiment (see FIG. 2).
• the strong electric field region 18 is generated in a region divided by the reflection members 23a and 23b.
• two reflection members 23a and 23b are shown as reflection members, but as shown in Fig. 6, the top plate is divided into multiple concentric shapes by more reflection members. Well ,. By dividing the top board into more areas, it is possible to further finely control the high-frequency stored energy at each position in the top board 15.
• slot holes 20 of antenna plate 3c are arranged at positions corresponding to the respective divided regions of top plate 15.
• the high-frequency waves radiated toward the inside of the top plate are reflected by the side wall of the reflecting member, so that the high frequencies are separated. It is confined in each region and shows directivity downward in each region. Since it is possible to supply high frequency from the individual slot holes to the chamber through the top plate for each of the divided areas, the plasma distribution in the chamber can be changed by appropriately changing the shape and size of the slot holes. Can be controlled. Therefore, it is preferable to supply high frequency uniformly in the chamber.
• the plasma processing apparatuses of the first and second embodiments have a structure in which a recess is provided on the high-frequency supply means side of the top plate 15, that is, on the antenna section 3 side, and a reflecting member is fitted therein as wave reflecting means.
• the reflection member need not be a solid, and may be a gas or a liquid as long as it is a conductor or a high dielectric substance.
• the side wall of the concave portion functions as a wave reflecting means.
• the recess is not limited to the high-frequency supply means side, but may be the side facing the chamber 1 as shown in FIG. In the example shown in FIG. 7, the reflection members 23c and 23d are placed inside these concave portions. As shown in FIG.
• concave portions may be provided from both sides and may be appropriately combined.
• the reflection members 23a and 23d are arranged.
• the reflecting member as the wave reflecting means may not be disposed in the concave portion but may penetrate the top plate as shown in FIG.
• the reflection members 23 e and 23 f are arranged.
• a structure in which the reflection member is completely wrapped inside the top plate 15 may be employed.
• the projection members 23 g and 23 h are arranged.
• the reflecting member is made of metal, and if the reflecting member is exposed in the space inside the chamber 1 as in the structure shown in FIGS. 7 to 9, it may cause contamination of the chamber 1. As in the structure shown in Fig. 1, Fig. 4, Fig. 6, and Fig. 10, it is necessary that the reflection member be hidden when viewed from the chamber 1 side.
• a concave portion or a through hole is provided on the surface of the top plate, and the reflecting member is provided inside the concave portion or the through hole.
• the reflecting member 23 r shown in FIG. may be arranged so as to completely fill the recesses and through holes provided in the top plate 15, the top plate 15 does not completely fill the recesses and through holes as shown in the reflection member 23s shown in Fig. 12.
• the arrangement may be such that a gap 24 is left between the material.
• the reflecting member is not limited to a solid reflecting member, and may be a hollow reflecting member as long as it has a surface in contact with the side wall of the concave portion or the through hole.
• each of the top plate 15 It becomes possible to finely control the high-frequency stored energy at the position.
• the top plate is concentrically divided by the reflection member, but the arrangement pattern of the reflection member is changed so that the division method of the top plate is other than concentric. Is also good.
• recesses 25 a and 25 b are provided on the surface of the top plate 15 on the chamber 1 side.
• the recesses 25 a and 25 b are open to the space in the chamber 1.
• the length of the portion sandwiched between the wave reflecting means adjacent to each other is the wavelength at which the high frequency propagates through the material of the top plate. It is preferably at least 1 ⁇ 2 times.
• the length C in FIG. 14, that is, the thickness of the top plate in the concave portion is ⁇ or less of the wavelength when high frequency propagates through the material of the top plate.
• a plasma processing apparatus according to a fourth embodiment of the present invention will be described.
• a recess 26 is concentrically arranged on the lower surface of the top plate 15.
• the antenna plate 3c is provided with a slot hole 20, but the concave portion 26 and the slot hole 20 are arranged at positions corresponding to the vertical direction, respectively.
• slot holes 20 are arranged so as to correspond to the thick portion of top plate 15. In the plasma processing apparatus, it can be said that the slot holes 20 are arranged so as to correspond to the thin portions of the top plate 15.
• the high-frequency wave emitted downward from the slot hole 20 is supplied to the thin portion of the top plate 15, so that a standing wave is hardly generated in the top plate 15.
• the supplied high frequency passes through the top plate 15 as it is, rather than being converted into a standing wave, and is radiated toward the space inside the chamber 1 via the concave portion 26. Since the inside of the concave portion 26 is a space into which the plasma can enter, the distance from the slot hole 20 to the plasma is reduced, and the power supply efficiency to the plasma is increased.
• the top plate 15 has a thin portion and a thick portion at the same time, so that the mechanical strength of the top plate 15 is sufficiently ensured.
• the distance from the lower surface of the top plate 15 to the workpiece becomes longer, so that the plasma generation surface moves away from the workpiece, and the plasma for the workpiece is Although the processing efficiency is slightly reduced, in the concave portion 26, the component toward the high frequency side is reflected by the side wall of the concave portion 26 and goes downward, so that the directivity of the high frequency downward is increased.
• standing waves can be prevented from being generated in the top plate, and the distribution of high-frequency power supply to plasma in the champer can be set by arranging slot holes and concave portions. A desired plasma distribution can be realized in the chamber.
• slot holes 20 are arranged in antenna plate 3c corresponding to both thick and thin portions of top plate 15 respectively. Good. Even in such a case, the electromagnetic state in the top plate can be set to a desired state by appropriately changing the shape and size of each slot hole.
• the top plate 15 is composed of two sheets, an upper top plate 15 s and a lower top plate 15 t.
• Concave part 2 7 is concentric with upper surface of lower top plate 15 t Are located in
• the antenna plate 3c is provided with a slot hole 20, but the concave portion 27 and the slot hole 20 are arranged at positions corresponding to the vertical direction.
• Above the lower top plate 15 t an upper top plate 15 s that is in contact with and covers the recess 27 is arranged.
• the upper top plate 15 s and the lower top plate 15 t are made of the same material.
• the portion directly below the slot hole 20 is thin and the recess 27 is formed through the upper top plate 15 s, so that the high frequency radiated downward from the slot hole 20 is lower than the upper top plate 15 s.
• the recess 27 Through the recess 27, and through the lower top plate 15 t toward the interior space of the chamber 1. Since both the top 15s and the bottom 15t are thin, high frequencies are unlikely to become standing waves inside the top 15.
• the top plate 15 has a thick portion as well as a thin portion, so that the mechanical strength of the top plate 15 is sufficiently ensured. Furthermore, when the high-frequency wave passes through the concave portion 27, the component directed to the side is reflected by the side wall of the concave portion 27, so that the directivity downward is further enhanced.
• the recess 27 is located on the upper surface of the lower top plate 15t, not on the surface of the chamber 1, the directivity can be improved without keeping the plasma generation surface away from the object to be processed. As a result, the density of plasma and radicals in the vicinity of the object can be improved.
• FIG. 17 a plasma processing apparatus according to a sixth embodiment of the present invention will be described.
• This plasma processing apparatus is basically similar to that described in the fourth embodiment with reference to FIG. 15, in which a concave portion is concentrically arranged on the lower surface of top plate 15. However, the depth of the recess is different.
• FIG. 17 shows only the vicinity of the top plate 15 in an enlarged manner.
• the lower surface of the top plate 15 is flat, but the depths of the arranged concave portions are different from each other, so that the heights of the bottom surfaces of the concave portions are different from each other.
• Other configurations are the same as those described in the fourth embodiment.
• the same effect as in Embodiment 4 can be obtained.
• standing waves can be prevented from being generated in the top plate, and the efficiency of power supply to plasma can be increased.
• a structure may be used in which the height of the bottom surface of the concave portion is the same and the height of the lower surface of the top plate 15 is changed.
• the height of the bottom surface of the concave portion and the height of the lower surface of the top plate 15 may both be changed. In the example of Fig. 19, the depth of the recess itself is almost constant despite the change in the height of the lower surface of the top plate 15, but only when the depth of the recess is almost constant. Absent.
• the electromagnetic state in the top plate can be adjusted to a desired value. State.
• the structure in which the top plate becomes thin at the position directly below the slot hole will generate a standing wave in the top plate. Can be prevented, and the directivity of high frequencies downward can be increased. Therefore, a desired plasma distribution can be achieved in the chamber.
• the electric field concentrates near the top plate receiving portion 10, which is a member on the chamber 1 receiving the top plate 15, and the contact 19 (see FIG. 20) between the top plate 15 and the top plate 15.
• the material of the receiving portion 10 may be sputtered by the plasma and cause contamination or particles.
• the wave reflecting means is provided in the top plate 15 according to the present invention, this problem can be prevented.
• the side wall 31 is provided as a wave reflecting means, and a part of the microwave is reflected as shown by an arrow 30, so that the degree of electric field concentration at the contact point 19 is reduced. It is possible to prevent the top plate receiving portion 10 from being sputtered. This is an effect that can also be obtained by the wave reflecting means exemplified in each of the above embodiments.
• the reflecting surface provided in the top plate is a surface along the vertical direction (a surface perpendicular to the main surface of the top plate). It is not limited to such a direction.
• the surface may be inclined with respect to the main surface of the top plate.
• the expression “high frequency” is used, but the high frequency includes a microwave.
• the electromagnetic state in the plate can be set to a preferable state.
• it can prevent the propagation of high-frequency waves in the radial direction, and can correct the uneven electric field intensity in the top plate between the center and the outer edge.
• the plasma density distribution in the chamber can be made more uniform.
• the present invention can be used in a plasma processing apparatus used for performing plasma processing on a workpiece at a semiconductor device manufacturing site or the like.

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• 2002
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