WO2003030247A3 - Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen - Google Patents
Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen Download PDFInfo
- Publication number
- WO2003030247A3 WO2003030247A3 PCT/DE2002/003615 DE0203615W WO03030247A3 WO 2003030247 A3 WO2003030247 A3 WO 2003030247A3 DE 0203615 W DE0203615 W DE 0203615W WO 03030247 A3 WO03030247 A3 WO 03030247A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contact surfaces
- substrate
- electrical contact
- contact
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4605—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated made from inorganic insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4632—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating thermoplastic or uncured resin sheets comprising printed circuits without added adhesive materials between the sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2401—Structure
- H01L2224/2402—Laminated, e.g. MCM-L type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2405—Shape
- H01L2224/24051—Conformal with the semiconductor or solid-state device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01061—Promethium [Pm]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/06—Lamination
- H05K2203/068—Features of the lamination press or of the lamination process, e.g. using special separator sheets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/085—Using vacuum or low pressure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
- H05K2203/1469—Circuit made after mounting or encapsulation of the components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Die Bonding (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/491,137 US7402457B2 (en) | 2001-09-28 | 2002-09-25 | Method for making contact with electrical contact with electrical contact surfaces of substrate and device with substrate having electrical contact surfaces |
JP2003533338A JP2005515616A (ja) | 2001-09-28 | 2002-09-25 | 基板の電気的コンタクト面の接続方法及び電気的コンタクト面を備えた基板からなるデバイス |
EP02774408A EP1430524A2 (de) | 2001-09-28 | 2002-09-25 | Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen |
AU2002340750A AU2002340750A1 (en) | 2001-09-28 | 2002-09-25 | Method for contacting electrical contact surfaces of a substrate and device consisting of a substrate having electrical contact surfaces |
KR1020047004531A KR100896906B1 (ko) | 2001-09-28 | 2002-09-25 | 기판의 전기적 콘택트면들과 콘택트하기 위한 방법 및전기적 콘택트면들을 갖는 기판을 포함하는 디바이스 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10147935.2 | 2001-09-28 | ||
DE10147935 | 2001-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003030247A2 WO2003030247A2 (de) | 2003-04-10 |
WO2003030247A3 true WO2003030247A3 (de) | 2003-10-09 |
Family
ID=7700669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/003615 WO2003030247A2 (de) | 2001-09-28 | 2002-09-25 | Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen |
Country Status (7)
Country | Link |
---|---|
US (1) | US7402457B2 (de) |
EP (1) | EP1430524A2 (de) |
JP (1) | JP2005515616A (de) |
KR (1) | KR100896906B1 (de) |
CN (1) | CN1575511A (de) |
AU (1) | AU2002340750A1 (de) |
WO (1) | WO2003030247A2 (de) |
Families Citing this family (103)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100468670C (zh) * | 2003-02-28 | 2009-03-11 | 西门子公司 | 带有大面积接线的功率半导体器件的连接技术 |
EP1597757A2 (de) * | 2003-02-28 | 2005-11-23 | Siemens Aktiengesellschaft | Verbindungstechnik für leistungshalbleiter mit einer der oberflächenkontur folgenden schicht aus elektrisch isolierendem material |
DE10314172B4 (de) * | 2003-03-28 | 2006-11-30 | Infineon Technologies Ag | Verfahren zum Betreiben einer Anordnung aus einem elektrischen Bauelement auf einem Substrat und Verfahren zum Herstellen der Anordnung |
DE10335155B4 (de) * | 2003-07-31 | 2006-11-30 | Infineon Technologies Ag | Verfahren zum Herstellen einer Anordnung eines elektrischen Bauelements auf einem Substrat |
DE10335153B4 (de) * | 2003-07-31 | 2006-07-27 | Siemens Ag | Schaltungsanordnung auf einem Substrat, die einen Bestandteil eines Sensors aufweist, und Verfahren zum Herstellen der Schaltungsanordnung auf dem Substrat |
DE10342295B4 (de) * | 2003-09-12 | 2012-02-02 | Infineon Technologies Ag | Anordnung eines elektrischen Bauelements mit einer elektrischen Isolationsfolie auf einem Substrat und Verfahren zum Herstellen der Anordnung |
DE10355925B4 (de) * | 2003-11-29 | 2006-07-06 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul und Verfahren seiner Herstellung |
DE102004007009A1 (de) * | 2004-02-12 | 2005-09-08 | Siemens Ag | Verfahren zur Herstellung eines Leistungsmoduls und Leistungsmodul |
DE102004009296B4 (de) * | 2004-02-26 | 2011-01-27 | Siemens Ag | Verfahren zum Herstellen einer Anordnung eines elektrischen Bauelements |
DE102004018475A1 (de) * | 2004-04-16 | 2005-11-10 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Leistungshalbleiteranordnung |
DE102004018468A1 (de) * | 2004-04-16 | 2006-02-16 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Verfahren zum strukturierten Aufbringen einer laminierbaren Folie auf ein Substrat für ein Halbleitermodul |
DE102004018471B4 (de) * | 2004-04-16 | 2009-04-16 | Infineon Technologies Ag | Leistungshalbleiterschaltung und Verfahren zum Herstellen einer Leistungshalbleiterschaltung |
DE102004018476B4 (de) * | 2004-04-16 | 2009-06-18 | Infineon Technologies Ag | Leistungshalbleiteranordnung mit kontaktierender Folie und Anpressvorrichtung |
DE102004019445A1 (de) * | 2004-04-19 | 2005-11-03 | Siemens Ag | Mit planarer Verbindungstechnik auf einem insbesondere elektrischleitendem Substrat aufgebaute Schaltung |
DE102004023305A1 (de) * | 2004-04-19 | 2005-11-03 | Siemens Ag | Leistungshalbleiter |
DE102004019443B3 (de) * | 2004-04-19 | 2005-08-11 | Siemens Ag | Leistungsmodul |
WO2005101501A1 (de) * | 2004-04-19 | 2005-10-27 | Siemens Aktiengesellschaft | Mit einer metallschicht gebildetes gehäuse |
DE102004019447A1 (de) * | 2004-04-19 | 2005-11-10 | Siemens Ag | Vorrichtung, insbesondere intelligentes Leistungsmodul, mit planarer Verbindungstechnik |
DE102004019442A1 (de) * | 2004-04-19 | 2005-10-06 | Siemens Ag | An planarer Verbindung angeordneter Kühlkörper |
DE102004019435A1 (de) * | 2004-04-19 | 2005-11-03 | Siemens Ag | An einer Kühlrippe angeordnetes Bauelement |
DE102004019431A1 (de) * | 2004-04-19 | 2005-11-10 | Siemens Ag | Hybrider Leiterplattenaufbau zur kompakten Aufbautechnik von elektrischen Bauelementen |
WO2005106951A1 (de) * | 2004-04-29 | 2005-11-10 | Siemens Aktiengesellschaft | Anordnung eines steuerbaren elektrischen bauelements auf einem substrat und verfahren zum herstellen der anordnung |
DE102004037078A1 (de) * | 2004-07-30 | 2006-03-23 | Siemens Ag | Planare Verbindungstechnik für Stromführung im Fehlerfall |
DE102004040773B3 (de) * | 2004-08-23 | 2005-05-25 | Siemens Ag | Halbleiterschaltgeräte mit Temeratursensor |
US7575999B2 (en) * | 2004-09-01 | 2009-08-18 | Micron Technology, Inc. | Method for creating conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies |
DE102004046806B4 (de) | 2004-09-27 | 2009-07-09 | Infineon Technologies Ag | Leistungshalbleitermodul |
DE102004056111A1 (de) | 2004-11-19 | 2006-06-01 | Siemens Ag | Halbleiterschaltmodul |
DE102004056984A1 (de) * | 2004-11-25 | 2006-06-08 | Siemens Ag | Stromrichteranordnung |
DE102004057497B4 (de) * | 2004-11-29 | 2012-01-12 | Siemens Ag | Wärmeaustauschvorrichtung und Verfahren zum Herstellen der Wärmeaustauschvorrichtung sowie Anordnung eines Bauelements und der Wärmeaustauschvorrichtung und Verfahren zum Herstellen der Anordnung |
DE102004057494A1 (de) * | 2004-11-29 | 2006-06-08 | Siemens Ag | Metallisierte Folie zur flächigen Kontaktierung |
DE102004059389B4 (de) * | 2004-12-09 | 2012-02-23 | Infineon Technologies Ag | Halbleiterbauelement mit Ausgleichsmetallisierung |
US7692293B2 (en) * | 2004-12-17 | 2010-04-06 | Siemens Aktiengesellschaft | Semiconductor switching module |
DE102004061908B4 (de) * | 2004-12-22 | 2009-07-30 | Siemens Ag | Verfahren zum Herstellen einer Schaltungsanordnung auf einem Substrat |
DE102004061936A1 (de) * | 2004-12-22 | 2006-07-06 | Siemens Ag | Anordnung eines Halbleitermoduls und einer elektrischen Verschienung |
DE102004061907A1 (de) * | 2004-12-22 | 2006-07-13 | Siemens Ag | Halbleitermodul mit geringer thermischer Belastung |
DE102004063039B4 (de) * | 2004-12-28 | 2011-09-22 | Siemens Ag | Anordnung mit einem elektrischen Leistungshalbleiterbauelement und einer Zwei-Phasen-Kühlvorrichtung |
DE102004062635B4 (de) * | 2004-12-28 | 2012-01-26 | Siemens Ag | Elektrische Baugruppe mit Abstandshaltern zwischen mehreren Schaltungsträgern |
DE102004062547A1 (de) * | 2004-12-28 | 2006-07-13 | Siemens Ag | Elektrische Baugruppe mit ineinander angeordneten Schaltungsträgern |
DE102005002987A1 (de) * | 2005-01-21 | 2006-07-27 | Siemens Ag | Leiterbahnstruktur zur Minimierung von thermomechanischen Belastungen |
DE102005006639B4 (de) | 2005-02-14 | 2007-08-16 | Siemens Ag | Erzeugen von SiC-Packs auf Wafer-Ebene |
DE102005006638B4 (de) * | 2005-02-14 | 2009-01-02 | Siemens Ag | Haftfeste Leiterbahn auf Isolationsschicht |
DE102005063532B3 (de) | 2005-02-17 | 2022-03-10 | Infineon Technologies Ag | Leistungshalbleiterbaugruppe |
DE102005007373B4 (de) * | 2005-02-17 | 2013-05-29 | Infineon Technologies Ag | Leistungshalbleiterbaugruppe |
US7596842B2 (en) * | 2005-02-22 | 2009-10-06 | Oak-Mitsui Inc. | Method of making multilayered construction for use in resistors and capacitors |
DE102006012007B4 (de) * | 2005-03-16 | 2013-05-16 | Infineon Technologies Ag | Leistungshalbleitermodul mit oberflächenmontierbaren flachen Außenkontakten und Verfahren zur Herstellung desselben und dessen Verwendung |
DE502006008565D1 (de) * | 2005-07-19 | 2011-02-03 | Siemens Ag | Anordnung eines elektrischen bauelements und einer zwei-phasen-kühlvorrichtung und verfahren zum herstellen der anordnung |
DE102005041100A1 (de) * | 2005-08-30 | 2007-03-08 | Siemens Ag | Halbleiterstruktur mit einem lateral funktionalen Aufbau |
DE102005041099A1 (de) * | 2005-08-30 | 2007-03-29 | Osram Opto Semiconductors Gmbh | LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik |
DE102005045613A1 (de) * | 2005-09-23 | 2007-03-29 | Siemens Ag | SiC-Halbleiterbauelement und Herstellungsverfahren |
DE102006010523B3 (de) * | 2006-02-20 | 2007-08-02 | Siemens Ag | Verfahren zur Herstellung von planaren Isolierschichten mit positionsgerechten Durchbrüchen mittels Laserschneiden und entsprechend hergestellte Vorrichtungen |
DE102006009723A1 (de) | 2006-03-02 | 2007-09-06 | Siemens Ag | Verfahren zum Herstellen und planaren Kontaktieren einer elektronischen Vorrichtung und entsprechend hergestellte Vorrichtung |
DE102006018765A1 (de) * | 2006-04-20 | 2007-10-25 | Infineon Technologies Ag | Leistungshalbleiterbauelement, Leistungshalbleiterbauteil sowie Verfahren zu deren Herstellung |
DE102006021959B4 (de) | 2006-05-10 | 2011-12-29 | Infineon Technologies Ag | Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung |
DE102006025172B4 (de) * | 2006-05-30 | 2008-10-16 | Siemens Ag | Piezoaktor mit Verkapselung und Verfahren zu seiner Herstellung |
US7524775B2 (en) | 2006-07-13 | 2009-04-28 | Infineon Technologies Ag | Method for producing a dielectric layer for an electronic component |
DE102006047761A1 (de) * | 2006-10-06 | 2008-04-10 | Infineon Technologies Ag | Halbleiterbauteil und Verfahren zu dessen Herstellung |
DE102007006706B4 (de) | 2007-02-10 | 2011-05-26 | Semikron Elektronik Gmbh & Co. Kg | Schaltungsanordnung mit Verbindungseinrichtung sowie Herstellungsverfahren hierzu |
DE102007009521B4 (de) * | 2007-02-27 | 2011-12-15 | Infineon Technologies Ag | Bauteil und Verfahren zu dessen Herstellung |
DE102007033288A1 (de) | 2007-07-17 | 2009-01-22 | Siemens Ag | Elektronisches Bauelement und Vorrichtung mit hoher Isolationsfestigkeit sowie Verfahren zu deren Herstellung |
DE102007033465A1 (de) * | 2007-07-18 | 2009-01-22 | Siemens Ag | Dehnschlitze zur thermomechanischen Entlastung einer elektrischen Kontaktierung |
DE102007034491A1 (de) | 2007-07-24 | 2009-02-05 | Siemens Ag | Modul mit elektronischem Bauelement zwischen zwei Substraten, insbesondere DCB-Keramiksubstraten, dessen Herstellung und Kontaktierung |
DE102007034949A1 (de) | 2007-07-26 | 2009-02-05 | Siemens Ag | Einheitlich normierte Leistungspackages |
DE102007036048A1 (de) * | 2007-08-01 | 2009-02-05 | Siemens Ag | Anordnung mit zumindest einem Halbleiterbauelement, insbesondere einem Leistungshalbleiterbauelement zur Leistungssteuerung hoher Ströme |
DE102007036566A1 (de) * | 2007-08-03 | 2009-02-19 | Siemens Ag | Federkontaktierung von elektrischen Kontaktflächen eines elektronischen Bauteils |
DE102007037621B4 (de) * | 2007-08-09 | 2014-09-18 | Siemens Aktiengesellschaft | Verwendung einer Harz-Formulierung als Folie in einem Verfahren zur planaren Kontaktierung einer elektrischen Kontaktstelle eines elektrischen Bauelements und ein entsprechendes Verfahren |
DE102007037622A1 (de) | 2007-08-09 | 2009-02-12 | Siemens Ag | Harz-Formulierung auf Bismaleinimid-Basis und Verwendung der Harz-Formulierung |
DE102007039916A1 (de) | 2007-08-23 | 2009-02-26 | Siemens Ag | Aufbau- und Verbindungstechnik von Modulen mittels dreidimensional geformter Leadframes |
DE102007041921A1 (de) | 2007-09-04 | 2009-03-05 | Siemens Ag | Verfahren zur Herstellung und Kontaktierung von elektronischen Bauelementen mittels einer Substratplatte, insbesondere DCB-Keramik-Substratplatte |
DE102007041926B4 (de) | 2007-09-04 | 2012-03-29 | Siemens Ag | Verfahren zur elektrischen Isolierung beziehungsweise elektrischen Kontaktierung von ungehäusten elektronischen Bauelementen bei strukturierter Verkapselung |
DE102007042444A1 (de) | 2007-09-06 | 2009-03-12 | Siemens Ag | Elektronisches Bauelement mit Empfangs- und Ansteuereinrichtung, insbesondere drahtlosem Steuerkontakt |
DE102007043001A1 (de) | 2007-09-10 | 2009-03-12 | Siemens Ag | Bandverfahren für elektronische Bauelemente, Module und LED-Anwendungen |
DE102007046969B3 (de) * | 2007-09-28 | 2009-04-02 | Siemens Ag | Elektronische Schaltung aus Teilschaltungen und Verfahren zu deren Herstellung und demgemäßer Umrichter oder Schalter |
US7955901B2 (en) | 2007-10-04 | 2011-06-07 | Infineon Technologies Ag | Method for producing a power semiconductor module comprising surface-mountable flat external contacts |
US7799614B2 (en) | 2007-12-21 | 2010-09-21 | Infineon Technologies Ag | Method of fabricating a power electronic device |
DE102008028299B3 (de) | 2008-06-13 | 2009-07-30 | Epcos Ag | Systemträger für elektronische Komponente und Verfahren für dessen Herstellung |
EP2144284A1 (de) | 2008-07-11 | 2010-01-13 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines Anschlusskontaktes an einem Halbleiterbauelement für die Leistungselektronik und elektronisches Bauteil mit einem auf diese Weise an einem Halblei-terbauelement hergestellten Anschlusskontakt |
DE102008058003B4 (de) | 2008-11-19 | 2012-04-05 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleitermoduls und Halbleitermodul |
DE102009010179A1 (de) | 2009-02-23 | 2010-09-02 | Osram Gesellschaft mit beschränkter Haftung | Leuchtmodul mit Reflektorwand |
DE102009010874A1 (de) * | 2009-02-27 | 2010-09-02 | Siemens Aktiengesellschaft | Mehrlagige Schaltungsanordnung und Verfahren zu deren Herstellung |
DE102009036418B4 (de) * | 2009-08-06 | 2011-06-22 | Siemens Aktiengesellschaft, 80333 | Wellenleiter, insbesondere beim Dielektrikum-Wand-Beschleuniger |
DE102010049961A1 (de) | 2010-10-28 | 2012-05-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement mit einem Halbleiterchip, einem Trägersubstrat und einer Folie und ein Verfahren zu dessen Herstellung |
DE102010062547B4 (de) | 2010-12-07 | 2021-10-28 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung einer Schaltungsanordnung |
DE102011003213A1 (de) | 2011-01-26 | 2012-07-26 | Siemens Aktiengesellschaft | Halbleiterbauelement mit einer Vielzahl von FET-Zellen |
DE102011080153A1 (de) | 2011-07-29 | 2013-01-31 | Infineon Technologies Ag | Flexible verbindung von substraten in leistungshalbleitermodulen |
DE102011083627A1 (de) | 2011-09-28 | 2013-03-28 | Continental Automotive Gmbh | Verfahren zur Kontaktierung eines elektronischen Bauteils und Baugruppe mit einem elektronischen Bauteil auf einem Substrat |
DE102012200327B4 (de) | 2012-01-11 | 2022-01-05 | Osram Gmbh | Optoelektronisches Bauelement |
US8823175B2 (en) * | 2012-05-15 | 2014-09-02 | Infineon Technologies Ag | Reliable area joints for power semiconductors |
DE102012216086B4 (de) | 2012-09-11 | 2017-01-05 | Siemens Aktiengesellschaft | Leistungselektronikmodul |
DE102012216389A1 (de) | 2012-09-14 | 2014-03-20 | Siemens Aktiengesellschaft | Leistungselektronikmodul und Verfahren zur Herstellung und Aktivierung eines Leistungselektronikmoduls |
DE102012222459A1 (de) * | 2012-12-06 | 2014-06-12 | Siemens Aktiengesellschaft | Schaltungsanordnung, Herstellungsverfahren für eine Schaltungsanordnung und Verfahren zum Schutz einer Schaltungsanordnung |
EP2804209A1 (de) * | 2013-05-17 | 2014-11-19 | ABB Technology AG | Geformtes Elektronikmodul |
DE102013215592A1 (de) | 2013-08-07 | 2015-02-12 | Siemens Aktiengesellschaft | Leistungselektronische Schaltung mit planarer elektrischer Kontaktierung |
DE102013215648A1 (de) | 2013-08-08 | 2015-02-12 | Siemens Aktiengesellschaft | Leistungselektronikmodul mit Substrat, Bauelement und Leiterplatte |
DE102013215647A1 (de) | 2013-08-08 | 2015-02-12 | Siemens Aktiengesellschaft | Leistungselektronisches Modul und Verfahren zur Herstellung eines leistungselektronischen Moduls |
DE102013215645A1 (de) | 2013-08-08 | 2015-02-12 | Siemens Aktiengesellschaft | Elektrisches Modul mit Substrat, Halbleiterbauelement und Leiterplatte |
US9992863B2 (en) | 2013-08-23 | 2018-06-05 | Apple Inc. | Connector inserts and receptacle tongues formed using printed circuit boards |
TWI614949B (zh) * | 2013-08-23 | 2018-02-11 | 蘋果公司 | 連接器、連接器插件、印刷電路板及用於製造所述連接器之方法 |
EP2854282A1 (de) | 2013-09-30 | 2015-04-01 | Alstom Technology Ltd | Submoduleidentifikation in einem modularen Mehrpunktumrichter basierend auf der Messung von Signallaufzeiten von der zentralen Regelungseinheit |
DE102014201306A1 (de) | 2014-01-24 | 2015-07-30 | Siemens Aktiengesellschaft | Leistungselektronikmodul mit 3D-gefertigtem Kühler |
DE102014207927A1 (de) * | 2014-04-28 | 2015-10-29 | Siemens Aktiengesellschaft | Transistoranordnung für einen Spannverband und Spannverband mit zumindest einer solchen Transistoranordnung |
DE102017215039A1 (de) * | 2017-08-29 | 2019-02-28 | Siemens Aktiengesellschaft | Leistungsmodul und Verfahren zur Herstellung eines solchen Leistungsmoduls |
DE102018214778A1 (de) * | 2018-08-30 | 2020-03-05 | Siemens Aktiengesellschaft | Verfahren zur Fertigung von Leiterbahnen und Elektronikmodul |
EP4141922A1 (de) * | 2021-08-26 | 2023-03-01 | Siemens Aktiengesellschaft | Leistungselektronische baugruppe |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049980A (en) * | 1987-04-15 | 1991-09-17 | Kabushiki Kaisha Toshiba | Electronic circuit device and method of manufacturing same |
US5291066A (en) * | 1991-11-14 | 1994-03-01 | General Electric Company | Moisture-proof electrical circuit high density interconnect module and method for making same |
EP0987760A2 (de) * | 1998-08-31 | 2000-03-22 | General Electric Company | Verbindungsstruktur für Mehrchipmodul und Herstellungsverfahren |
WO2001037338A2 (de) * | 1999-11-16 | 2001-05-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Verfahren zum integrieren eines chips innerhalb einer leiterplatte und integrierte schaltung |
US6294741B1 (en) * | 1995-07-10 | 2001-09-25 | Lockheed Martin Corporation | Electronics module having high density interconnect structures incorporating an improved dielectric lamination adhesive |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4130A (en) * | 1845-08-01 | Improvement in preparing matrices for type by the electrotyping process | ||
FR2714471B1 (fr) * | 1993-12-28 | 1996-03-15 | Inst Francais Du Petrole | Dispositif et méthode de détection d'interfaces séparant plusieurs phases par ondes ultrasonores. |
US5616886A (en) | 1995-06-05 | 1997-04-01 | Motorola | Wirebondless module package |
US5863812A (en) | 1996-09-19 | 1999-01-26 | Vlsi Technology, Inc. | Process for manufacturing a multi layer bumped semiconductor device |
JP3670917B2 (ja) | 1999-12-16 | 2005-07-13 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
US6498387B1 (en) * | 2000-02-15 | 2002-12-24 | Wen-Ken Yang | Wafer level package and the process of the same |
EP1990833A3 (de) * | 2000-02-25 | 2010-09-29 | Ibiden Co., Ltd. | Mehrschichtige Leiterplatte und Herstellungsverfahren für mehrschichtige Leiterplatte |
-
2002
- 2002-09-25 JP JP2003533338A patent/JP2005515616A/ja active Pending
- 2002-09-25 US US10/491,137 patent/US7402457B2/en not_active Expired - Fee Related
- 2002-09-25 CN CNA028190637A patent/CN1575511A/zh active Pending
- 2002-09-25 AU AU2002340750A patent/AU2002340750A1/en not_active Abandoned
- 2002-09-25 EP EP02774408A patent/EP1430524A2/de not_active Withdrawn
- 2002-09-25 KR KR1020047004531A patent/KR100896906B1/ko not_active IP Right Cessation
- 2002-09-25 WO PCT/DE2002/003615 patent/WO2003030247A2/de active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049980A (en) * | 1987-04-15 | 1991-09-17 | Kabushiki Kaisha Toshiba | Electronic circuit device and method of manufacturing same |
US5291066A (en) * | 1991-11-14 | 1994-03-01 | General Electric Company | Moisture-proof electrical circuit high density interconnect module and method for making same |
US6294741B1 (en) * | 1995-07-10 | 2001-09-25 | Lockheed Martin Corporation | Electronics module having high density interconnect structures incorporating an improved dielectric lamination adhesive |
EP0987760A2 (de) * | 1998-08-31 | 2000-03-22 | General Electric Company | Verbindungsstruktur für Mehrchipmodul und Herstellungsverfahren |
WO2001037338A2 (de) * | 1999-11-16 | 2001-05-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Verfahren zum integrieren eines chips innerhalb einer leiterplatte und integrierte schaltung |
Also Published As
Publication number | Publication date |
---|---|
KR100896906B1 (ko) | 2009-05-12 |
WO2003030247A2 (de) | 2003-04-10 |
JP2005515616A (ja) | 2005-05-26 |
KR20040037173A (ko) | 2004-05-04 |
US7402457B2 (en) | 2008-07-22 |
CN1575511A (zh) | 2005-02-02 |
US20050032347A1 (en) | 2005-02-10 |
AU2002340750A1 (en) | 2003-04-14 |
EP1430524A2 (de) | 2004-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003030247A3 (de) | Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen | |
WO2002068320A3 (en) | Devices having substrates with openings passing through the substrates and conductors in the openings, and methods of manufacture | |
WO2005013363A3 (de) | Schaltungsanordnung auf einem substrat und verfahren zum herstellen der schaltungsanordnung auf dem substrat | |
WO2002078087A3 (en) | Semiconductor chip having multiple conductive layers in an opening, and method for fabricating same | |
KR950001997A (ko) | 반도체 구조물 형성방법, 다중-칩 집적회로 구조물 형성방법, 집적회로 칩을 워크피스에 접착하는 방법, 집적 전기 구조물 및 입방체 구조물 | |
WO2004077548A3 (de) | Verbindungstechnik für leistungshalbleiter | |
EP1895587A3 (de) | Substrat für eine Halbleiterpackung | |
WO2004015771A3 (en) | Semiconductor device and method of manufacturing the same | |
WO2003054954A3 (en) | Electrical/optical integration scheme using direct copper bonding | |
TW200520042A (en) | Semiconductor module containing circuit elements, method for manufacture thereof, and application thereof | |
CA2199346A1 (en) | Semiconductor device and manufacturing method of the same | |
WO2005027233A3 (en) | Solid metal block mounting substrates for semiconductor light emitting devices, and oxidizing methods for fabricating same | |
AU2003301089A1 (en) | Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices | |
WO2002013258A3 (en) | Backside contact for integrated circuit and method of forming same | |
ATE144654T1 (de) | Montieren von elektrischen bauelementen mit uniaxialleitfähigen klebstoff | |
KR950703793A (ko) | 반도체 칩을 3차원으로 상호 연결하기 위한 방법과 그 구성물(Method for interconnecting semi-conductor pads in three dimensions and component thus obtained) | |
EP1050905A3 (de) | Halbleitervorrichtung mit isolierender Schicht | |
TWI256715B (en) | Semiconductor device and its manufacturing method | |
TW200620576A (en) | Low profile, chip-scale package and method of fabrication | |
EP0818823A3 (de) | Radiofrequenzmodul und Herstellungsverfahren des Radiofrequenzmoduls | |
WO1999019906A3 (en) | Method and apparatus for packaging high temperature solid state electronic devices | |
TW200627652A (en) | Electronic package and method of manufacturing same | |
WO2003096416A3 (en) | Reactive solder material | |
FR2811475B1 (fr) | Procede de fabrication d'un composant electronique de puissance, et composant electronique de puissance ainsi obtenu | |
MY140754A (en) | Connection board, and multi-layer wiring board, substrate for semiconductor package and semiconductor package using connection board, and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BY BZ CA CH CN CO CR CU CZ DK DZ EC EE ES FI GB GD GE GH GM HR ID IL IN IS JP KE KG KP KR KZ LC LK LS LT LU LV MA MD MG MK MN MW MZ NO NZ OM PH PL PT RO RU SD SE SI SK SL TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ UG ZM ZW AM AZ BY KG KZ RU TJ TM AT BE BG CH CY CZ DK EE ES FI FR GB GR IE IT LU MC PT SE SK TR BF BJ CF CG CI GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2002774408 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2003533338 Country of ref document: JP Ref document number: 1020047004531 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10491137 Country of ref document: US Ref document number: 20028190637 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2002774408 Country of ref document: EP |