WO2003028419A1 - Lamine destine a la production d'une couche condensateur et son procede de production - Google Patents
Lamine destine a la production d'une couche condensateur et son procede de production Download PDFInfo
- Publication number
- WO2003028419A1 WO2003028419A1 PCT/JP2002/009860 JP0209860W WO03028419A1 WO 2003028419 A1 WO2003028419 A1 WO 2003028419A1 JP 0209860 W JP0209860 W JP 0209860W WO 03028419 A1 WO03028419 A1 WO 03028419A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- aluminum
- alumina barrier
- barrier layer
- forming
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 47
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 277
- 239000010949 copper Substances 0.000 claims abstract description 269
- 229910052802 copper Inorganic materials 0.000 claims abstract description 269
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 176
- 230000004888 barrier function Effects 0.000 claims abstract description 171
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 163
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 162
- 239000000463 material Substances 0.000 claims abstract description 112
- 238000009835 boiling Methods 0.000 claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000011888 foil Substances 0.000 claims abstract description 15
- 239000011162 core material Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 666
- 238000000034 method Methods 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- 239000011230 binding agent Substances 0.000 claims description 58
- 238000007747 plating Methods 0.000 claims description 44
- 239000011229 interlayer Substances 0.000 claims description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 238000002407 reforming Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 19
- 238000007740 vapor deposition Methods 0.000 claims description 18
- 239000008151 electrolyte solution Substances 0.000 claims description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 239000011651 chromium Substances 0.000 claims description 15
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 10
- 238000007743 anodising Methods 0.000 claims description 7
- 239000011889 copper foil Substances 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 34
- 239000000243 solution Substances 0.000 description 25
- 239000010409 thin film Substances 0.000 description 22
- 238000005530 etching Methods 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 229910000365 copper sulfate Inorganic materials 0.000 description 7
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 7
- 238000005553 drilling Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000005868 electrolysis reaction Methods 0.000 description 5
- 239000004744 fabric Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910001593 boehmite Inorganic materials 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 3
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 230000002779 inactivation Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 2
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- WXKXZQDXHGHFKR-UHFFFAOYSA-L [Cu].[Fe](Cl)Cl Chemical compound [Cu].[Fe](Cl)Cl WXKXZQDXHGHFKR-UHFFFAOYSA-L 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-OUBTZVSYSA-N copper-65 Chemical compound [65Cu] RYGMFSIKBFXOCR-OUBTZVSYSA-N 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- WMYWOWFOOVUPFY-UHFFFAOYSA-L dihydroxy(dioxo)chromium;phosphoric acid Chemical compound OP(O)(O)=O.O[Cr](O)(=O)=O WMYWOWFOOVUPFY-UHFFFAOYSA-L 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 244000062645 predators Species 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- -1 zinc is deposited Chemical compound 0.000 description 1
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/129—Ceramic dielectrics containing a glassy phase, e.g. glass ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/0929—Conductive planes
- H05K2201/09309—Core having two or more power planes; Capacitive laminate of two power planes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0315—Oxidising metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Definitions
- the present invention relates to a laminated board for forming a capacitive layer used for manufacturing a multilayer printed wiring board and the like, and a manufacturing method thereof.
- this server is required to have large-capacity memory that can centrally manage a large amount of information, and high-speed computing performance that allows simultaneous access by multiple computers. Therefore, the signal transmission within the server must be faster and must be less erroneous.
- the circuit design of the central operator (CPU) and the performance of the IC chip are important, but the circuit design of the printed wiring board on which these are mounted is also very important. It becomes important.
- printed wiring board manufacturers to respond to the above-mentioned increase in signal transmission speed, multilayered printed wiring boards from the structural aspect and shortened signal transmission distance by changing the circuit design from the circuit layout aspect Various innovations have been made.
- capacitors play a role in providing a stable supply of operating power to devices, and are generally placed on the outer layer of a printed wiring board.However, they can be made thinner and have excellent characteristics Of the multilayer printed wiring board A method of forming a layer using a double-sided copper-clad laminate has become widespread. Various thin material for forming a capacitor layer has been proposed to form the capacitor layer.
- a so-called double-sided copper-clad laminate in which FR_4 insulating base material in which glass cloth is impregnated with epoxy resin is used as a dielectric layer and copper foil is stuck on both sides thereof is used.
- double-sided copper-clad laminates having a dielectric layer that does not contain a skeletal material such as glass cloth have been used.
- the material for forming the built-in capacitor layer as a double-sided copper-clad laminate using FR-4 base material has a glass cloth as an aggregate in the insulating layer, so it is useful for controlling the thickness when thinning.
- the undulating shape of glass cloth may appear on the surface when copper foil and FR-4 substrate are laminated and hot pressed to form a copper-clad laminate.
- the critical thickness of the pre-preda is about 50 ⁇ , and it is impossible to make the thickness less than this.
- the resin layer used as the dielectric layer does not contain a skeletal material, so that the resin layer can be easily thinned.
- the thickness of the insulating layer serving as the dielectric layer is also as described above. Compared to the case of using FR-4 material, it can be made extremely thin, less than 20 m, and the capacity can be increased to ln FZ cm 2 to 2 n FZ cm 2 . It was planned. However, even with this method, the thickness of the resin layer of the resin-coated copper foil was controlled on the order of microns, and it was impossible to further reduce the thickness of the dielectric layer.
- FIG. 1 and 4 are schematic cross-sectional views of a laminated plate for forming a capacity layer.
- Figure 2 shows a scanning electron microscope image of the surface on which the aluminum material was anodized to form a non-porous oxide film.
- FIG. 3 shows a scanning electron microscope image of the modified alumina barrier layer after the aluminum material with the alumina barrier layer was subjected to boiling reforming.
- 5 to 8 are schematic conceptual views showing a manufacturing flow of an inner core material using a laminated plate for forming a capacity layer.
- FIG. 9 and FIG. 10 are schematic conceptual diagrams showing the production flow of the inner core material using the laminated plate for forming the capacity layer. Overview of the invention
- the first laminated layer for forming the capacitor layer has a three-layer structure of “aluminum layer, modified alumina barrier layer, and electrode copper layer, and the modified alumina barrier layer is an aluminum sheet or aluminum foil.
- aluminum material is anodized to form an alumina barrier layer as a uniform oxide layer, and the aluminum material having the alumina barrier layer formed is boiled in water.
- FIG. 1 shows a schematic cross-sectional view of the first laminated layer 1a for forming a capacity layer. It should be noted here that the cross-sectional views used in this specification are merely schematic views, and are described so that the layer configuration on the spot can be clearly understood. Does not correspond to actual products.
- the manufacturing method includes a barrier layer forming step of forming an alumina barrier layer, which is a uniform oxide layer having a thickness of 1 or less, on the surface of the aluminum material by anodizing the aluminum material in an electrolytic solution.
- the material obtained in (1) is referred to as “aluminum material with alumina barrier layer.” Boiling process in which the material is boiled in water and the alumina barrier layer is modified to form a modified alumina barrier layer. 3 An electroless plating method or vapor deposition method is used on the surface of the modified alumina barrier layer.
- the laminate 1a for forming the capacity layer is specified by a manufacturing method. Accordingly, while mainly describing the manufacturing method described in the claims, the laminated plate for forming a capacitive layer obtained by the method will also be described.
- the laminated board 1a for forming a capacitor layer referred to in the present invention uses a material called an aluminum plate or an aluminum foil as a starting material for obtaining a laminated board for forming a capacitor layer.
- aluminum plate or aluminum foil means that a material generally called a foil is a metal material with a thickness of 200 im or less, and if it exceeds 200 m, it is classified as a plate. There is, however, no clear classification in academic terms, so such a description was adopted. And. In the present specification, the terms indicating these items are simply referred to as "alminum materials" in order to make the description simple and easy to understand.
- the material constituting the aluminum material 2 is used as a concept including a material having a purity of 99.9%, which is called so-called pure aluminum, and a material containing alloying elements such as manganese and chromium.
- alloying elements are not in a completely solid solution state and are easily disperse as dispersed particles.
- manganese, chromium, and copper can be used when forming an oxide film by the anodic treatment described below. It has the effect of changing the color tone of the anode coating. The higher the content, the higher the solubility in the electrolytic solution over aluminum, making it difficult to form a uniform aluminum oxide coating. . Therefore, it is desirable to use as pure aluminum material as possible.
- the aluminum material 2 is subjected to anode treatment.
- anodizing refers to the use of metal materials in solution Depolarization to form an oxide layer, a hydroxide layer, etc. on the surface.
- the aluminum material 2 is used as an anode electrode, and is used as an indication of a process for forming an oxide (alumina) film by anodic polarization.
- the electrolytic solution used here it is desirable to use a solution which can be widely used for anodizing treatment of aluminum and which can easily form a non-porous oxide film.
- the electrolytic solution is a boric acid solution, an ammonium borate solution, an ammonium adipate solution, an ammonium phosphate solution, an ammonium tartrate solution, or the like.
- concentration of the electrolyte and the temperature of the solution are arbitrarily adjusted according to the thickness of the non-porous oxide film to be formed, the formation voltage, and the like, and do not need to be particularly limited.
- Aluminum anodic treatment can be performed by widely varying the concentration of electrolyte, time, temperature, and current density. By changing each of these factors, an oxide film formed on the surface of aluminum material The thickness and properties of the material differ. The setting of these conditions is not particularly limited, and the conditions may be arbitrarily selected according to the process. However, in the present invention, a porous porous film is not formed on a nonporous nonporous oxide film, as in an operation called anodization, which is a typical example of anodizing of aluminum. As shown in the figure, the growth of the oxide film must be stopped in the state of a smooth non-porous oxide film, as is evident from the scanning electron microscope image.
- this non-porous oxide film is referred to as an alumina barrier layer.
- the thickness of the alumina barrier layer which is a non-porous oxide film, can generally be manufactured to a thickness of 3 / m or less.
- the non-porous aluminum oxide (alumina) layer manufactured here is used as a dielectric layer used as a capacitor, it is necessary to form the layer as a uniform thickness.
- the alumina barrier layer 6 when an aluminum material is put in an electrolytic solution and anode-polarized, oxygen is generated from the surface of the aluminum material 2, and immediately, the surface of the aluminum material 2 becomes an oxide of aluminum.
- the oxygen generated near the surface of the aluminum material 2 is then diffused through the alumina layer to form the alumina barrier layer 6. It will grow. It seems to grow at a thickness of 1.3 nm to 1.4 nm per 1 V of the applied formation voltage.
- the alumina barrier layer 6 grows, and as the thickness increases, the electricity does not gradually pass, and the amount of generated oxygen decreases, so the growth limit of the alumina barrier layer 6 is limited. Exists.
- the thickness of 1 / im or less was considered to be the reason why a uniform alumina barrier layer 6 was formed. . That is, if the thickness of the alumina barrier layer 6 is considered to exceed 1 / ⁇ m, the growth of the alumina barrier layer 6 is governed by the diffusion control of oxygen inside the alumina barrier layer 6, There is a high possibility that the growth will concentrate on the easily diffused portions such as microcracks which are considered to be present, and the overall thickness of the alumina barrier layer 6 tends to be uneven when viewed as a whole. It is considered something.
- a laminate for forming a capacitive layer was manufactured using a 100 cm square aluminum foil with a thickness of 100 m, and the capacitance was measured at multiple points within that area.
- the alumina barrier layer 6 is set to 1 m or less and when the alumina barrier layer 6 is set to about 2 m, there is a large difference in the variation of the capacitance value depending on the part to be measured. However, the variation increases.
- an aluminum plate or aluminum foil (hereinafter, referred to as “aluminum material”) is anodic-polarized in an electrolytic solution, and an alumina barrier layer 6 as a uniform oxide layer having a thickness of 1 m or less is formed of aluminum. Forming on the surface of the material 2 is an alumina barrier layer forming step.
- aluminum material with alumina barrier layer what is obtained here is referred to as “aluminum material with alumina barrier layer”.
- the thickness of the alumina barrier layer 6 is expressed as 1 or less, the most optimal thickness is 30 V to 700 V when the growth film thickness per 1 V of the formation voltage is 1.4 nm.
- the aluminum material A with the alumina barrier layer is put into boiling water and boiled.
- the boiling treatment the aluminum material A with the alumina barrier layer is placed in boiling water and the alumina barrier layer 6 is modified by boiling.
- the alumina barrier layer 6 modified by the boiling treatment is referred to as “modified alumina barrier layer 3”, and the observed state is shown in the scanning electron microscope image shown in FIG.
- the alumina barrier layer 6 which has been smooth is transformed into a porous modified alumina barrier layer 3.
- boiling water may also be used in the sealing treatment performed to form a porous porous oxide film on the non-porous non-porous oxide film and obtain higher corrosion resistance. This is for closing the pores of the porous oxide film, which is a lath, and is fundamentally different from the application of boiling in the present invention.
- the boiling treatment in the present invention is preferably performed in the range of 1 second to 1 hour. If the boiling time is shorter than 1 second, the reforming of the alumina barrier layer 6 is insufficient, and the favorable shape modification as shown in FIG. 3 cannot be performed. Beyond an hour, the aluminum material itself can start to erode by water, which degrades product quality.
- Modified alumina barrier layer 3 By being modified into a porous alumina barrier layer, it is possible to improve the adhesion strength at the interface between the electrode copper layer 4 and the modified alumina barrier layer 3 described below. It becomes. That is, it is because the electroless copper plating described below penetrates the porous modified alumina barrier layer 3 to exhibit the anchor effect.
- the step of performing the boiling treatment described above is the boiling reforming step.
- the electrode copper layer 4 is formed on the modified alumina barrier layer 3 in the step shown in FIG. 5 (c).
- the term “electrode copper layer” is used because it is an electrode surface when a capacitance circuit is formed. Even if a copper layer is to be formed on the modified alumina barrier layer 3, the modified alumina barrier layer 3 itself cannot pass the current because it is passivated, so that the copper layer cannot be formed directly by the electrolytic method. Therefore, first, a thin-film copper layer is formed on the surface of the modified alumina barrier layer 3 by using a wet electroless copper plating or a dry vapor deposition method.
- This first copper layer is called the thin copper layer.
- the entire electrode copper layer 4 is formed using only the electroless copper plating or the vapor deposition method.
- only the initial copper layer is formed by electroless copper plating or a thin film copper layer of 2 m or less by the vapor deposition method, and the electrolytic method described below. It is preferable to grow the copper layer to complete the electrode copper layer 4.
- an electroless copper plating is a solution containing formaldehyde in consideration of the catalytic activity for the oxidation of the reducing agent, and is a solution showing strong alkalinity.
- electroless copper plating baths used at room temperature include: (1) a bath composed of copper sulfate, Rochelle salt, formaldehyde, sodium carbonate, and sodium hydroxide; (2) Copper sulfate, Rochelle salt, formaldehyde, and a stabilizer. A bath or the like constituted by additives.
- pre-treatment such as raising palladium if necessary before performing electroless copper plating.
- the dry gas phase vapor deposition method uses a method such as a so-called sputtering vapor deposition method in which an aluminum material with an alumina barrier layer is placed in a vacuum atmosphere, and an electron beam is irradiated to a copper target in the atmosphere. Is intended. Considering the thickness of the thin film copper layer, there is a high possibility that a uniform and defect-free thin film can be formed more than the electroless copper plating.
- a copper layer is further grown on the thin-film copper layer formed on the modified alumina barrier layer 3 by using an electrolytic method.
- the one after being grown by this electrolytic method is called an “electrode copper layer”.
- an electrolytic solution used in the electrolysis method for example, a solution that can be used as a copper ion supply source such as a copper sulfate solution or a copper pyrophosphate solution is used, and the type of the solution is not particularly limited.
- the concentration is 30 to 100 g of copper, 50 to 200 g of sulfuric acid, and the liquid temperature is 30 to 80 ° C, and the current density is! ⁇ 100 AZ dm 2 condition
- the laminated board 1a is obtained. Kiyapashi evening capacitance produced using the laminate for Kiyapashi evening layer formation obtained in this manner, an average 5 n FZcm 2 ⁇ mean 100 n FZcm 2, as not considered in the prior art, high electrical It has capacity.
- the laminate for forming the second capacitor layer has a five-layer structure of a second electrode copper layer, a binder metal layer, a Z-modified alumina barrier layer, an aluminum layer, and a first electrode copper layer.
- the metal layer is made of any of aluminum, nickel, and chromium, or an alloy thereof, and the modified alumina barrier layer is a uniform oxide layer obtained by anodizing one surface of an aluminum material.
- a capacity layer formed by forming an alumina barrier layer and boiling the aluminum material on which the alumina barrier layer has been formed in water, wherein the modified alumina barrier layer is used as a dielectric layer.
- FIG. 4 shows a schematic cross-sectional view of the laminate 1b for forming the second capacity layer.
- the copper layers on both surfaces are distinguished and used by the terms of the first electrode copper layer 4 and the second electrode copper layer 4 ', but they do not originally need to be distinguished, and the description of the manufacturing method is convenient. Above, they are only used separately.
- the manufacturing method of the laminate 1b for forming the second capacitor layer is as follows: "One side of the aluminum material is made to have a thickness of 2 zm by electroless plating or vapor deposition.
- the aluminum material on which the layer is formed is anodically polarized in an electrolytic solution, and an alumina barrier layer, which is a uniform oxide layer having a thickness of 1 / m or less, is formed on the other surface on which the first electrode copper layer is formed.
- aluminum material with a first electrode copper layer and an alumina barrier layer 3
- the aluminum material with an alumina barrier layer is boiled in water to form an alumina barrier layer.
- the laminate for forming the capacitor layer In the production of the laminate for forming the capacitor layer, first, in the first electrode copper layer forming step shown in FIG. 6 (a), an electroless plating method or a vapor deposition method is applied to one surface of the aluminum material 2. Then, a thin film copper layer having a thickness of 2 zm or less is formed, and copper is further deposited on the surface on which the thin film copper layer is formed by an electrolytic copper plating method to form a first electrode copper layer 4. At this time, the thin-film copper layer and the electrolytic copper plating method employ the same method as described above, so that detailed description is omitted here to avoid redundant description.
- the aluminum material 2 on which the first electrode copper layer 4 is formed is anodically polarized in an electrolytic solution to form the first electrode copper layer 4 as shown in FIG. 6 (b).
- the alumina barrier layer 6 which is a uniform oxide layer having a thickness of 1 zz m or less is formed on the other side.
- the method of forming the alumina barrier layer 6 at this time is also the same as described above, and a detailed description thereof will be omitted here to avoid redundant description.
- the aluminum material 2 having the first electrode copper layer 4 and the alumina barrier layer 6 was immersed in water by a boiling reforming process shown in FIG. 6 (c). Boiling and reforming the alumina barrier layer 6 to form the modified alumina barrier layer 3 Because This reforming process is also the same as described above, and a detailed description thereof will be omitted here to avoid redundant description.
- the modified alumina barrier of the aluminum material 2 including the first electrode copper layer 4 and the modified alumina barrier layer 3 after the boiling reforming step has been completed.
- a binder metal layer 5 of any of aluminum, nickel, chromium, or an alloy thereof is provided by a vapor deposition method.
- the binder metal layer 5, which is located between the modified alumina barrier layer 3 and the second electrode copper layer 4 ', is used to improve the adhesion between the two layers.
- the vapor deposition method referred to here can use the same method as that of forming the thin film copper layer of the first electrode copper layer 4 described above. Description is omitted.
- a copper layer to be the second electrode copper layer 4 ′ is formed on the surface of the binder metal layer 5.
- the optimum forming method differs depending on whether the binder metal layer 5 has formed aluminum, nickel or chromium, or an alloy thereof.
- the method of depositing copper here is also the same as described above, so that detailed description is omitted here to avoid redundant description.
- the binder metal layer 5 is made of either nickel or chromium, or an alloy thereof, it is possible to directly deposit the second electrode copper layer on the surface by using an electrolytic method. Of course, there is no problem even if the electroless copper plating is used first.
- the binder metal layer 5 is formed of aluminum or an aluminum-based alloy
- a copper layer is formed directly on the binder metal layer 5
- adhesion may be lacked. Therefore, zinc or chromium is formed on the surface of the binder metal layer 5.
- This concept can be adopted throughout the present invention in order to improve the interlayer adhesion between the copper layer and the aluminum layer, and the layer used for ensuring the adhesion between the copper layer and the aluminum layer is left as it is. This is referred to as a seed metal layer.
- Another method for manufacturing the laminate 1b for forming the second capacity layer is as follows.
- the manufacturing method is as follows: (1) a first electrode copper layer forming step of forming a first electrode copper layer on the surface of an aluminum material by cladding an aluminum material and a copper foil; (2) forming the first electrode copper layer A barrier layer forming step of forming an alumina barrier layer, which is a uniform oxide layer having a thickness of 1 m or less, on the other surface side on which the first electrode copper layer is formed by anodically polarizing aluminum material in an electrolyte solution. (Hereinafter, the obtained material is referred to as “aluminum material with first electrode copper layer and alumina barrier layer”). 3 The aluminum material with alumina barrier layer is boiled in water to modify the alumina barrier layer.
- the only difference between the above-described second manufacturing method 1b for manufacturing a laminate for forming a capacitive layer and this manufacturing method is that the manufacturing procedure is different.
- the former employs an electrochemical technique for forming the first electrode copper layer, while the latter employs a rolling technique to bond the aluminum material to the copper foil.
- the subsequent manufacturing method is the same.
- a further manufacturing method can be adopted as a method of manufacturing the laminate for forming the second capacity layer.
- the manufacturing method includes the following steps: “aluminum barrier layer forming a uniform oxide layer having a thickness of 1 m or less to form an alumina barrier layer on one surface of the aluminum material by anode-polarizing the aluminum material in an electrolytic solution; (2) A boiling reforming process in which the aluminum material with the alumina barrier layer is boiled in water, and the alumina barrier layer is reformed to form a modified alumina barrier layer.
- An electrode copper layer forming step of forming a copper layer to be a second electrode copper layer on the surface of the second electrode copper layer binder metal layer / Al A method for producing a laminate for forming a capacitor layer, comprising a five-layer structure of a minimum layer Z a modified alumina barrier layer Z a first electrode copper layer, and using the modified aluminum layer as a dielectric layer. It is.
- This manufacturing method is shown in the manufacturing flow shown in FIG. That is, first, as shown in FIG. 7 (a), the aluminum material 2 is anodized, and until the reforming treatment shown in FIG. 7 (b) is performed, the laminated plate 1a for forming the first capacity layer is formed. It is the same as the method of manufacturing. Then, the point of forming the binder metal layer 5 shown in FIG. 7 (c) is also the same as the above-described manufacturing method. However, the difference is in the method of manufacturing the first electrode copper layer 4 and the second electrode copper layer 4 '. In the last stage, the first electrode copper layer 4 and the second electrode copper layer 4 'are manufactured.
- a thin-film copper layer is formed on the surface of the binder metal layer 5 by electroless copper plating.
- a seed metal S capable of depositing a small amount of copper such as zinc is deposited, and the first electrode copper layer 4 and the aluminum It is preferable from the viewpoint of ensuring adhesion to the material 2.
- the binder metal layer 5 and the seed metal layer S of the aluminum material 2 (the amount of adhesion is extremely small, less than 1 111 2 1 or less than 1 111 ⁇ .
- a copper layer may be formed on both surfaces by electrolytic deposition.
- the modified alumina has the five-layer structure of the second electrode copper layer, the binder metal layer, the aluminum layer, the Z-modified alumina barrier layer, and the first electrode copper layer, as shown in Fig. 7 (e).
- the above-described laminated board for forming a capacitive layer can easily form the shape of a capacitive circuit by using an etching process of a printed wiring board, and can be used for forming an inner layer of a multilayer printed wiring board.
- the appended claims are directed to a multilayer printed wiring board provided with a capacitance circuit formed using the laminated layer for forming a capacitance layer according to the present invention. Furthermore, when a laminate for forming the second capacity layer is used, the following multi-layer structure is used. A method of manufacturing an inner layer core material of a layer printed wiring board can be adopted.
- inner core material refers to a printed wiring board that is packaged inside a multilayer printed wiring board and used for lamination.
- a laminated plate for forming a second capacitor layer having a five-layer structure of a second electrode copper layer Z a binder metal layer, a modified alumina parier layer / aluminum layer Z and a first electrode copper layer was used.
- a method of manufacturing an inner layer core material of a multilayer printed wiring board comprising: (1) a copper layer on one side of a first electrode copper layer or a second electrode copper layer and a binder metal layer located thereunder; Alternatively, an aluminum layer is etched into a desired shape to form a capacitor circuit only on one side, and (2) an interlayer insulating layer forming material such as a pre-preda is superimposed on the surface on which the capacitor circuit is formed on one side, and pressed.
- the first feature of this manufacturing method is that a laminated board for forming a second capacitor layer is used, and at first, only one side is etched to form a capacitor circuit, and an interlayer insulating material is bonded thereto, and thereafter, The point is that the opposite surface is etched to form opposing capacitance circuits, and an interlayer insulating material is bonded to it.
- either the copper layer on either side of the first electrode copper layer or the second electrode copper layer and the binder metal layer or the aluminum layer located thereunder are etched into a desired shape and the capacitor is etched. Circuits will be formed only on one side. You. At this time, a binder metal layer exists below the first electrode copper layer, and an aluminum layer exists below the second electrode copper layer. If a capacitor circuit is to be formed by etching, the aluminum layer under the second electrode copper layer can be easily removed together with the copper etching. On the other hand, in the case where the binder metal layer is under the first electrode copper layer, if the binder metal layer is aluminum and chromium, it can be similarly easily removed with a copper etching solution. is there.
- interlayer insulating layer forming material such as a pre-preda is superimposed on the surface and pressed to be laminated, so that the interlayer insulating layer forming material is stuck on one side.
- interlayer insulating material refers to a pre-preda used for a so-called rigid substrate, a film material such as polyimide used for a flexible substrate, and the like, and is not particularly limited.
- the copper layer on the other side on which the interlayer insulating layer constituting material is not bonded and the binder metal layer or aluminum layer located thereunder are etched into a desired shape to form a capacitor circuit.
- an interlayer insulating material such as a pre-predeer is overlapped on the surface on which the capacity circuit on the other side is formed, pressed and laminated, and the both sides are laminated with the interlayer insulating material. Since these processing methods are the same as those described above, description thereof is omitted here.
- a through hole is formed by drilling the through hole and the via hole, and then, before copper plating for ensuring interlayer conduction, a passivation process is performed on the aluminum portion exposed on the inner wall portion of the through hole. Will do.
- This inactivation process is the second feature.
- the method used for drilling is mechanical processing using a drill blade, Processing methods such as laser drilling can be employed, and there is no particular limitation.
- the aluminum portion exposed on the inner wall of the through-hole immediately after drilling has a very thin oxide layer on the surface, and does not exhibit the excellent corrosion resistance of ordinary aluminum.
- a strongly acidic or strongly alkaline copper plating solution in this state to perform interlayer conduction plating the aluminum portion is damaged. Therefore, it is necessary to grow the oxide film on the surface of the aluminum portion exposed on the inner wall of the through hole immediately after drilling to a level showing good corrosion resistance or to form a protective film. This is referred to as "inactivation treatment" in the present specification.
- this passivation treatment is performed on the aluminum portion exposed on the inner wall of the through hole, it is preferable to form the protective coating by using a boehmite method or a so-called chemical conversion treatment.
- the former base one chromite method, by treatment with boiling or saturated steam in water, boehmite on the surface of the aluminum section (Alpha 1 2 ⁇ 3 ⁇ 3 ⁇ 2 ⁇ ) is to form a target film.
- the treatment time at this time may be 10 to 30 minutes to form a coating of 0.2 / m or less.
- the chemical conversion treatment it is preferable to adopt a chromate coating treatment in which a bath composition of a specific acceleration system is used, the bath temperature is set at room temperature to 40, and the treatment is performed for about 10 seconds in this bath.
- a bath composition of a specific acceleration system is used, the bath temperature is set at room temperature to 40, and the treatment is performed for about 10 seconds in this bath.
- copper coexists as a metal other than aluminum.Even if it adheres to the copper surface, it does not adversely affect the later formation of interlayer conduction pattern, and has a very small effect on electrical resistance etc. This is because it is necessary to select one composed of elements that do not give an effect.
- a non-chromate film treatment that forms a zirconium or titanium-based film that can greatly increase electric resistance a phosphoric acid-containing phosphate chromate film treatment that greatly affects electric resistance, a zinc phosphate film treatment, etc. Is considered inappropriate.
- Film formed in this chromate coating processing is C r (OH) 2 ⁇ HC R_ ⁇ 4, A 1 (OH) 3 ⁇ 2 H 2 ⁇ complexes.
- a copper plating layer is formed on the inner wall portion of the through hole and the through hole of the via hole to ensure interlayer conduction.
- the copper plating at this time is formed by performing electroless copper plating and then performing electrolytic copper plating.
- the conditions of the electroless plating and the electrolytic copper plating at this time are not particularly limited. However, the formation of this plating layer May be performed only on the inner wall portion of the through-hole, or the copper plating layer may be formed even on the surface of the interlayer insulating constituent material located on both sides. In the latter case, it becomes a so-called four-layer copper-clad laminate, and the copper plating layer on the surface of the interlayer insulating component can be used as it is as a copper layer for forming a copper circuit.
- a laminated plate for forming a capacitor layer according to the present invention was manufactured, and the electric capacity when a capacitor was manufactured using the laminated plate for forming a capacitor layer was measured.
- First Embodiment With reference to FIG. 5, a description will be given of the manufacture of a first laminate 1a for forming a capacity layer.
- a 100 cm thick aluminum foil 2 having a purity of 99.99% and a size of 30 cm square was used as a starting material.
- this aluminum foil 2 was immersed in an aqueous solution of ammonium borate at 80 g / 1, and a formation voltage range of 30 V to 700 V was applied.
- the aluminum material A with the alumina barrier layer was sufficiently washed with pure water and subjected to the following boiling reforming step.
- the aluminum material A with the alumina barrier layer was boiled in boiling pure water for 5 minutes to obtain a modified alumina barrier layer 3.
- Electroless copper plated solution used here is composed of copper sulfate 30 g / dm 3, Rochelle salt 1 00 gZdm 3, formaldehyde (37%) 30 cmVdm 3, carbonate sodium S OgZclm 3, sodium hydroxide 30 gZdm 3 A bath with a bath temperature of 24 was used.
- the formed thin-film copper layer was deposited and formed to have a thickness of 2 / xm as a converted thickness assuming that the thin-film copper layer was uniformly deposited on a flat surface.
- the thin-film copper layer was subsequently grown by an electrolytic method to form an electrode copper layer 4.
- the thin copper layer is connected to the power source terminal, a stainless steel plate is placed as the anode electrode, sulfuric acid 150 g / 1, copper 65 gZl, liquid temperature 45 It was immersed in a copper sulfate bath, and electrolyzed for 10 seconds under a smooth plating condition of a current density of 15 AZdm 2 , and a copper component equivalent to a thickness of 3 / m was uniformly and smoothly deposited on the thin film copper layer. Therefore, the total of the thin film copper layer and the electrolytic copper layer, the electrode copper layer 4 itself is about
- the electrode copper layer 4 of the laminated plate 1a for forming the capacity layer is force-sword-polarized, a stainless steel plate is arranged at the counter electrode, and the concentration of 70g sulfuric acid and 20g nozinc is set using a zinc sulfate bath.
- the treatment was performed under the conditions of a liquid temperature of 40, a current density of 15 AZdm 2 , and an electrolysis time of 5 seconds.
- the laminated board 1a for forming the capacitive layer was finally dried for 40 seconds in a furnace heated to an ambient temperature of 110 by an electric heater.
- Table 1 show that the maximum value, which is the minimum value when the capacitance was measured at each of the 20 points of the laminated board 1a for forming each capacity layer manufactured by changing the formation voltage, was obtained.
- Cp (max). Average Cp (ave), and ⁇ ⁇ C p (max) ⁇ - ⁇ Cp (min) ⁇ .
- ⁇ C p is used as an index indicating the dispersion of measured values, and the smaller the ACp, the smaller the dispersion.
- Second Embodiment In this embodiment, the manufacturing flow shown in FIG. In addition, a second laminated board 1b for forming a capacity layer was manufactured.
- a thickness of 2 m or less is formed on one side of the aluminum material 2 by using an electroless plating method or a vapor deposition method.
- a thin copper layer is formed, and copper is further deposited on the surface on which the thin copper layer is to be formed by electrolytic copper plating, and the first electrode copper layer 4 (using the same reference numerals as those of the ⁇ electrode copper layer '' in the first embodiment). ).
- a 100 cm thick aluminum foil 2 having a purity of 99.99% and a size of 30 cm square was used as a starting material.
- a first electrode copper layer 4 was formed by forming a thin-film copper layer by an electroless copper plating method and depositing copper by an electrolytic copper plating method as in the first embodiment. Accordingly, regarding the manufacturing conditions, the same method as described above is employed, and a detailed description is omitted here to avoid duplicating descriptions.
- the aluminum foil 2 on which the first electrode copper layer 4 was formed was anodically polarized in an electrolytic solution to form the other surface on which the first electrode copper layer 4 was formed.
- an alumina barrier layer 6 as a uniform oxide layer having a thickness of 1 or less was formed.
- the method of forming the alumina barrier layer 6 at this time is the same as that of the first embodiment, so that detailed description is omitted here to avoid redundant description.
- the alumina barrier layer 6 was formed by performing anodic polarization treatment in a formation voltage range of 100 V. As a result, an alumina barrier layer 6 having a thickness of 140 nm was formed only on one side.
- the aluminum foil 2 provided with the first electrode copper layer 4 and the alumina barrier layer 6 was purified in pure water by a boiling reforming process shown in FIG. 6 (c). Then, the alumina barrier layer 6 was reformed to obtain a modified alumina barrier layer 3 having a thickness of about 100 nm.
- This reforming process is also the same as in the first embodiment described above, and a detailed description thereof will be omitted here to avoid redundant description.
- the modified alumina barrier layer 3 of the aluminum material 2 having the first electrode copper layer 4 and the modified alumina barrier layer 3, which has been subjected to the boiling reforming step Aluminum was provided as a binder metal layer 5 on the surface on which was formed by sputtering evaporation.
- the sputtering deposition method at this time is as follows. X 1 0- 3 evacuated to P becomes a (1 X 1 0- 5 torr ) vacuum degree of about, by ion plating in the Kiri ⁇ air about the surface of the modified alumina barrier layer 3 An aluminum layer with a thickness of 1 m was formed.
- a copper layer to be the second electrode copper layer 4 ' was formed on the surface of the binder metal layer 5. Since the second electrode copper layer 4 ′ is formed by the binder metal layer 5 and the aluminum layer, a very small amount of zinc is electrodeposited by electrolysis using the solution used for the basin of the first embodiment, and thereafter, A copper layer was formed using an electrolytic method.
- the electrolysis conditions and the like at this time are the same as the conditions used for increasing the copper thickness of the first electrode copper layer 4. Therefore, a detailed description is omitted here to avoid duplication. Thereafter, in the same manner as in the first example, zinc protection was performed on the surfaces of the copper layers on both sides.
- the first electrode copper layer 4 has a five-layer structure
- the modified alumina barrier layer 3 is a dielectric.
- a dry film 7 was laminated as an etching resist on both surfaces of the laminate 1b for forming a capacitor layer manufactured in the second embodiment. Then, the dry circuit, on the side where the first electrode copper layer 4 is located, was exposed to a capacitor circuit shape and developed to obtain a state shown in FIG. 8 (b). At this time, the dry film 7 on the other side having the first electrode copper layer 4 ′ is merely cured entirely. You. When the exposure and development are completed, as shown in Fig. 8 (c), the circuit is etched using an iron chloride copper etchant to simultaneously remove the first electrode copper layer 4 and the aluminum layer 2, thereby forming a capacitor circuit. The formation of 4a was performed. At this time, since the dry film 7 is present on the surface of the second electrode copper layer 4 'on the other side, the second electrode copper layer 4' remains without being etched.
- the pre-preda P was bonded to the surface on which the capacitor circuit 4 a was formed. That is, one sheet of FR-4 Pre-Preda P having a thickness of 100 i / m is superimposed on the surface on which the capacity circuit 4a is formed, heated at 180 ° C for 60 minutes, pressed, and adhered to one side. Pre-Preda P was stuck together.
- the dry film 7 was again laminated on the surface of the second electrode copper layer 4 ′ on the other side to which the interlayer insulating layer constituting material was not attached.
- the surface of the dry film 7 was exposed and developed with a capacitor circuit shape to obtain the state shown in FIG. 9 (g).
- the second electrode copper layer 4 ′ and the binder metal layer (aluminum layer) 5 located thereunder were simultaneously etched to form a capacitor circuit 4 ′ a. . Since the etching method is the same as described above, the description is omitted here. At this stage, there is no need to perform any particular sealing because the pre-preda has already been attached to one side.
- the dry film 7 is peeled off, and then the other side of the surface on which the capacity circuit 4 ′ a is formed is covered with a FR ⁇ ⁇ FR thick FR-1 4
- the pre-predator P was overlaid and pressed and laminated, and as shown in Fig. 9 (h), a state where the constituent materials of the interlayer insulating layer were laminated on both sides.
- the pressing conditions at this time are the same as described above.
- a through hole was formed by drilling a through hole TH having a diameter of 250 m using a drill blade. Then, at this stage, before the copper plating for ensuring interlayer conduction, the aluminum portion exposed on the inner wall portion of the through hole was subjected to a passivation treatment.
- This deactivation process uses a boehmite method, By boiling for 10 minutes in water to form a boehmite (A 1 2 ⁇ 3 ⁇ 3 H 2 ⁇ ) coating.
- a copper plating layer 8 was formed on the inner wall of the through hole.
- an electroless copper plating layer having a thickness of about 2 m is formed using the same electroless copper plating solution and conditions as those used in the first embodiment, and then the electrolytic copper plating is performed. It was formed by this.
- the copper electrolyte solution, sulfuric acid is 1 5 0 g Z and copper sulfate solution with copper 6 5 g and liquid temperature 4 5, the current density 1 0 AZ dm 2 smooth
- an electrolytic copper plating layer having a thickness of about 8 / m was deposited. Therefore, the total thickness of the copper plating layer 8 is about 10 m.
- the copper plating layer 8 is also formed by precipitation on the pre-predeer P present on both sides, and is in the state of a so-called four-layer multilayer copper-clad laminate MLB, and the copper plating layer 8 on the surface of the interlayer insulating component is It could be used as it is as a copper layer for forming a copper circuit.
- the laminate for forming the capacity layer according to the present invention may have a three-layer structure of an aluminum layer (alumina oxide) layer Z copper layer, or a second electrode copper layer nobinder metal layer / modified alumina barrier layer aluminum layer It has a five-layer structure of one electrode copper layer, and by forming an alumina layer, which is a dielectric layer, directly on an aluminum layer, it can be formed as a thinner and more uniform thin layer than ever before. When used as a dielectric layer, it is possible to manufacture a capacitor with a very high capacitance that has not been seen before.
- the laminated board for forming the capacity layer according to the present invention does not employ a method of cladding or laminating the material, so that the thickness can be easily controlled, and the multilayer board can be used for the inner layer of the multilayer printed wiring board. This is effective in reducing the thickness of the printed wiring board.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-7011123A KR100517234B1 (ko) | 2001-09-26 | 2002-09-25 | 커패시터층 형성용 적층판 및 그 제조방법 |
US10/466,886 US6839219B2 (en) | 2001-09-26 | 2002-09-25 | Laminate for forming capacitor layer and method for manufacturing the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001293589 | 2001-09-26 | ||
JP2001-293589 | 2001-09-26 | ||
JP2002157068A JP2003173929A (ja) | 2001-09-26 | 2002-05-30 | キャパシタ層形成用の積層板及びその製造方法 |
JP2002-157068 | 2002-05-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003028419A1 true WO2003028419A1 (fr) | 2003-04-03 |
Family
ID=26622911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/009860 WO2003028419A1 (fr) | 2001-09-26 | 2002-09-25 | Lamine destine a la production d'une couche condensateur et son procede de production |
Country Status (6)
Country | Link |
---|---|
US (1) | US6839219B2 (ja) |
JP (1) | JP2003173929A (ja) |
KR (1) | KR100517234B1 (ja) |
CN (1) | CN1500372A (ja) |
TW (1) | TW594811B (ja) |
WO (1) | WO2003028419A1 (ja) |
Cited By (1)
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CN100424818C (zh) * | 2003-05-09 | 2008-10-08 | 美光科技公司 | 电容器结构及其形成方法 |
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WO2006014753A1 (en) * | 2004-07-23 | 2006-02-09 | Sundew Technologies, Llp | Capacitors with high energy storage density and low esr |
KR100807796B1 (ko) * | 2005-05-19 | 2008-03-06 | 한덕수 | 미세 패턴용 연성다층인쇄회로기판 |
US8323801B2 (en) * | 2006-01-18 | 2012-12-04 | E I Du Pont De Nemours And Company | Process for forming a durable low emissivity moisture vapor permeable metallized sheet including a protective metal oxide layer |
JP4650833B2 (ja) * | 2006-02-09 | 2011-03-16 | 三洋電機株式会社 | 陽極体とその製造方法、および固体電解コンデンサ |
US8623737B2 (en) * | 2006-03-31 | 2014-01-07 | Intel Corporation | Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same |
KR100793916B1 (ko) * | 2006-04-05 | 2008-01-15 | 삼성전기주식회사 | 인쇄회로기판 내장형 커패시터의 제조방법 |
KR20090031441A (ko) * | 2006-10-16 | 2009-03-25 | 미쓰이 긴조꾸 고교 가부시키가이샤 | 배선용 적층막 및 배선 회로 |
US8293323B2 (en) | 2007-02-23 | 2012-10-23 | The Penn State Research Foundation | Thin metal film conductors and their manufacture |
US7605048B2 (en) * | 2007-04-06 | 2009-10-20 | Kemet Electronics Corporation | Method for forming a capacitor having a copper electrode and a high surface area aluminum inner layer |
US7886414B2 (en) * | 2007-07-23 | 2011-02-15 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing capacitor-embedded PCB |
CN101365294B (zh) * | 2007-08-08 | 2010-06-23 | 富葵精密组件(深圳)有限公司 | 覆铜基材及使用该覆铜基材的柔性电路板 |
JP2010098196A (ja) * | 2008-10-17 | 2010-04-30 | Hitachi Cable Ltd | 配線構造及び配線構造の製造方法 |
US8409963B2 (en) * | 2009-04-28 | 2013-04-02 | CDA Procesing Limited Liability Company | Methods of embedding thin-film capacitors into semiconductor packages using temporary carrier layers |
US8088658B2 (en) | 2009-04-28 | 2012-01-03 | E. I. Du Pont De Nemours And Company | Thin film capacitor and method of fabrication thereof |
US8391017B2 (en) * | 2009-04-28 | 2013-03-05 | Georgia Tech Research Corporation | Thin-film capacitor structures embedded in semiconductor packages and methods of making |
KR101109359B1 (ko) * | 2010-06-14 | 2012-01-31 | 삼성전기주식회사 | 방열기판 및 그 제조방법 |
US20120301688A1 (en) * | 2011-05-25 | 2012-11-29 | Globalfoundries Inc. | Flexible electronics wiring |
KR101411015B1 (ko) * | 2011-12-23 | 2014-06-23 | 제일모직주식회사 | 글라스 클로스 및 이를 포함하는 플렉시블 기판 |
CN103542386B (zh) * | 2013-11-01 | 2016-03-09 | 深圳市九洲光电科技有限公司 | Led基板及耐高压led灯具 |
US9343357B2 (en) | 2014-02-28 | 2016-05-17 | Qualcomm Incorporated | Selective conductive barrier layer formation |
DE102015111667A1 (de) * | 2015-07-17 | 2017-01-19 | Rogers Germany Gmbh | Substrat für elektrische Schaltkreise und Verfahren zur Herstellung eines derartigen Substrates |
KR102652258B1 (ko) * | 2016-07-12 | 2024-03-28 | 에이비엠 주식회사 | 금속부품 및 그 제조 방법 및 금속부품을 구비한 공정챔버 |
JP6585759B1 (ja) * | 2018-03-28 | 2019-10-02 | 株式会社Uacj | アルミニウム部材及びその製造方法 |
JP6827083B2 (ja) * | 2019-03-29 | 2021-02-10 | 古河電気工業株式会社 | 表面処理銅箔、銅張積層板、及びプリント配線板 |
CN111349950B (zh) * | 2020-04-22 | 2021-07-06 | 山东金宝电子股份有限公司 | 一种附载体超薄电解铜箔的制备方法 |
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2002
- 2002-05-30 JP JP2002157068A patent/JP2003173929A/ja active Pending
- 2002-09-16 TW TW091121113A patent/TW594811B/zh not_active IP Right Cessation
- 2002-09-25 US US10/466,886 patent/US6839219B2/en not_active Expired - Fee Related
- 2002-09-25 KR KR10-2003-7011123A patent/KR100517234B1/ko not_active IP Right Cessation
- 2002-09-25 WO PCT/JP2002/009860 patent/WO2003028419A1/ja active IP Right Grant
- 2002-09-25 CN CNA028078314A patent/CN1500372A/zh active Pending
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JPS5140563A (ja) * | 1974-10-02 | 1976-04-05 | Tokyo Shibaura Electric Co | Haisenyokiban |
JPS558054A (en) * | 1978-07-04 | 1980-01-21 | Ise Electronics Corp | Method of manufacturing multiilayer wiring layer |
JPH08269799A (ja) * | 1995-03-27 | 1996-10-15 | Sakura Keikinzoku Kogyo Kk | アルミニウム材の表面処理方法および表面処理装置 |
EP1100295A2 (en) * | 1999-11-12 | 2001-05-16 | Matsushita Electric Industrial Co., Ltd. | Capacitor-mounted metal foil and a method for producing the same, and a circuit board and a method for producing the same |
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CN100424818C (zh) * | 2003-05-09 | 2008-10-08 | 美光科技公司 | 电容器结构及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20040053020A1 (en) | 2004-03-18 |
TW594811B (en) | 2004-06-21 |
US6839219B2 (en) | 2005-01-04 |
KR100517234B1 (ko) | 2005-09-27 |
JP2003173929A (ja) | 2003-06-20 |
CN1500372A (zh) | 2004-05-26 |
KR20030080034A (ko) | 2003-10-10 |
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