WO2003014421A1 - Method for producing high purity nickel, high purity nickel, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target - Google Patents
Method for producing high purity nickel, high purity nickel, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target Download PDFInfo
- Publication number
- WO2003014421A1 WO2003014421A1 PCT/JP2001/009237 JP0109237W WO03014421A1 WO 2003014421 A1 WO2003014421 A1 WO 2003014421A1 JP 0109237 W JP0109237 W JP 0109237W WO 03014421 A1 WO03014421 A1 WO 03014421A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- impurities
- nickel
- anolyte
- purity nickel
- electrolysis
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/06—Electrolytic production, recovery or refining of metals by electrolysis of solutions or iron group metals, refractory metals or manganese
- C25C1/08—Electrolytic production, recovery or refining of metals by electrolysis of solutions or iron group metals, refractory metals or manganese of nickel or cobalt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
Definitions
- the present invention provides a method for producing high-purity nickel having a purity of 5 N (99.99% by weight) or more by electrolytic refining using a nickel-containing solution, a high-purity nickel, and a sputtering target comprising the high-purity nickel. And a thin film formed by the sputtering target.
- high-purity nickel is required to reduce alkali metals, radioactive elements, transition metal elements, and gas components as much as possible, and is particularly necessary for forming electrodes and wiring of VLSIs or forming magnetic thin films. Widely used as a sputtering target material.
- Alkali metals such as Na and K easily move in the gate insulating film and cause deterioration of the MOS-LSI interface characteristics.
- Radioactive elements, such as U and Th, cause soft errors in the device due to the emitted ⁇ -rays.
- transition metal elements such as Fe also cause problems at the interface junction.
- gas components such as carbon and oxygen are also not preferable because they may cause particles to be generated during sputtering.
- the present invention provides a simple method for performing electrolysis using a nickel-containing solution from a nickel raw material containing a large amount of iron, carbon, oxygen, etc., and has a purity of 5 N (99.9.99) from the same raw material. It aims to provide a technology for efficiently producing high-purity nickel (wt%) or higher.
- the anode and power source are separated by a diaphragm, and anolyte is extracted intermittently or continuously. This anolyte is pre-electrolyzed to remove impurities such as iron, cobalt, and copper, and then a filter is used.
- the method for producing high-purity nickel according to the above-mentioned 1, wherein the impurities are removed by intermittently and the liquid after the removal is intermittently or continuously supplied to the cathode side.
- the anode and the power source are separated by a diaphragm.
- the anolyte is extracted intermittently or continuously.
- a nickel foil is put into the anolyte to remove impurities such as iron, cobalt and copper by a substitution reaction.
- the content is 5 N (9.999 wt%) or more.
- FIG. 1 is a diagram showing an outline of the electrolysis process.
- a 4 N-level massive nickel raw material 2 is placed in an anode basket 3 to form an anode 5, and electrolysis is performed using nickel or the like for a cathode 4.
- Nickel raw materials mainly contain large amounts of iron, carbon, oxygen, and the like.
- the anode 5 and the force sword 4 are separated by a diaphragm 6, and anolyte is extracted intermittently or continuously.
- the anolyte is adjusted to pH 2-5.
- the force sword box is separated from the outer liquid (anolyte) via a diaphragm.
- An oxidizing agent 7 is added to the extracted anolyte to precipitate impurities such as iron, cobalt and copper as hydroxide. That is, divalent iron becomes trivalent by the oxidizing agent 7 and precipitates as Fe (OH) 3 .
- the oxidizing agent 7 hydrogen peroxide, nitric acid and the like can be used.
- the extracted anolyte can be put in a preliminary electrolyzer to remove impurities such as iron, cobalt, and copper by electrolysis. Furthermore, the extracted anolyte is placed in a replacement tank, and nickel foil is used to replace impurities such as iron, cobalt, and copper in the electrolytic solution to remove these impurities.
- FIG. 1 shows the step of adding an oxidizing agent, which can be easily removed by replacing step 7 with a pre-electrolysis or replacement method.
- the impurities can also be removed by combining each of the above-mentioned oxidizing agents, pre-electrolysis or substitution methods.
- the impurities such as the precipitate are removed using the filter 8.
- Activated carbon should be used for the filter.
- the activated carbon filter 8 also has an effect of removing organic substances eluted from a container or the like, in addition to the impurities such as the precipitated oxides. As described above, the concentration of iron in the electrolyte can be reduced to 1 mg / L or less.
- this solution is introduced intermittently or continuously to the power source side, and used as catholyte for electrolytic purification.
- the current efficiency is 80 to 100%.
- nickel deposited with a purity of 5 N precipitated on a force source
- it is 5 N (99.99 wt%) or more
- C, N, S, P, F, and H are each 10 wt ppm or less. be able to.
- the electrodeposited nickel obtained by the electrolysis can be subjected to vacuum melting such as electron beam melting.
- vacuum melting alkaline metals such as Na and K and other volatile impurities and gas components can be effectively removed.
- ion exchange resin or solvent extraction since no ion exchange resin or solvent extraction is performed, no organic matter is mixed, and impurity elements caused by the organic solvent can be suppressed. Examples and comparative examples
- Electrolysis was performed using an electrolytic cell as shown in Fig. 1, using 1 kg of a 4N-level massive nickel raw material as an anode, and using a 2N-level nickel plate as a power source.
- Table 1 shows the content of impurities in the raw materials.
- Nickel raw materials mainly contain large amounts of iron, carbon, oxygen, and the like.
- Bath temperature 50 ° C was added 1 mo 1 ZL hydrofluoric acid with sulfuric acid-based electrolyte solution, Yukke Le concentration 50 g / L, current density 2 AZ dm 2, electrolytic and time 40 hr embodiment (the pH of the solution to 2 At this time, the anolyte was extracted intermittently. Hydrogen peroxide (H 2 0 2 ) was added to the extracted anolyte to convert divalent iron to trivalent, and to convert impurities such as iron to hydroxide Fe Precipitated as (OH) 3 .
- impurities such as the precipitate were removed using an activated carbon filter. From the above, the iron concentration in the electrolyte could be reduced to lmgZL or less.
- this solution was intermittently introduced into the cathode side, that is, into the anode passquette, and used as catholyte for electrolysis.
- Electrodeposited nickel (precipitated on a force sword) About 1 kg was obtained. Purity achieved 5 N. That is, except for gas components, it is 5 N (99.999 wt%) or more, and O: 30 wt ppm or less as impurities and C, N, S, P, and F are each 10 wt ppm or less. did it. Table 1 compares the above results with the raw materials. ⁇ shi IN ⁇ Jpr ⁇ JT raw material 50 200 50 10 10 10 10 10 10 10 10 10 Example 2 20 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10
- Example 1 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10 ⁇ 10
- electrolysis was performed using a bulk material of 4 N level as an anode and a 3 N level Huckel plate as a power source.
- the electrolysis was performed at a bath temperature of 30 ° C, a hydrochloric acid-based electrolyte, a nickel concentration of 80 gZL, and a current density of 5 A / dm for 40 hours.
- Example 2 As in Example 1, the pH of the solution was adjusted to 2. At this time, anolyte is extracted intermittently. Withdrawn Anorai bets to be entering hydrogen peroxide (H 2 0 2), changing the divalent iron to trivalent, and the impurities such as iron precipitated as hydroxides F e (OH) 3.
- impurities such as the precipitate were removed using an activated carbon filter.
- the concentration of iron in the electrolyte could be reduced to 1 mg / L or less.
- this solution was intermittently introduced into the cathode side, that is, into the anode passest, and used as a cathode for electrolysis.
- Electrodeposited nickel (precipitated on a force sword) About 1 kg was obtained. The deposited nickel was further subjected to electron beam melting. Electron beam melting conditions were performed in 1 A, 30 kW, vacuum degree 2 ⁇ 5 X 10- 4 mmHg. Table 1 shows the above results.
- electrolysis was performed using 1 kg of a 4 N-level bulk nickel material as an anode and a 3 N-level nickel plate as a cathode.
- Table 1 shows the content of impurities in the raw materials.
- Electrodeposited nickel (deposited on a force sword) About lkg was obtained.
- Example 1 the raw material iron 50 wt111 was 2 tppm, oxygen 200 wtppm was 20 wtppm, carbon 50 wtppm power was less than 10 wtppm, C, N, S, P, FlOw tp pm could each be less than 10 wtp pm.
- Example 2 it was possible to reduce the iron to 1 wtppm, the oxygen to less than 10 wtppm, and the other impurities to less than 1 Otppm.
- Electrolysis was carried out using 1 kg of a 3 N-level massive nickel raw material as an anode and a 2 N-level aluminum plate as a power source.
- Table 2 shows the impurity content of the raw materials.
- This nickel raw material contains a large amount of iron, cobalt, copper, carbon, oxygen, and the like.
- the electrolysis conditions were as follows: bath temperature 40 ° (: 1 mol / L of hydrochloric acid was added to a sulfuric acid-based electrolyte, nickel concentration was 100 g / L, current density was 3 A / dm 2 , and electrolysis time was 25 hours.
- the pH of the solution was adjusted to 2.5.
- the anolyte is extracted intermittently.
- the extracted anolyte was electrolyzed at a current density of 0.1 l AZdm 2 in a preliminary electrolyzer to remove iron, cobalt, copper, and the like.
- an organic substance in the electrolytic solution was removed using an activated carbon filter.
- concentration of iron, cobalt, copper, and the like in the electrolyte could be reduced to lmg_L or less.
- this solution was intermittently introduced into the cathode side, that is, into the anode passest, and used as a cathode for electrolysis.
- Electrolysis was performed using 1 kg of a 3 N-level massive nickel material as a node and using a 2 N-level titanium plate as a power source.
- Table 2 shows the impurity contents of the raw materials.
- This nickel raw material contains a large amount of iron, cobalt, copper, carbon, oxygen and the like.
- Electrolysis conditions were a bath temperature 60 ° C, and added pressure to 1 mo 1 / L hydrochloric acid in sulfuric acid-based electrolyte, the nickel concentration 100 GZL, current density 1. 5A / dm 2, electrolytic time between 50 and hr embodiment.
- the pH of the solution was adjusted to 2.7.
- the anolyte is extracted intermittently.
- the extracted anolyte was replaced with impurities in the electrolyte using a 2N-level Ni foil in a replacement tank to remove iron, cobalt, copper, and the like.
- an organic substance in the electrolytic solution was removed using an activated carbon filter.
- concentration of iron, cobalt, copper, etc. in the electrolyte could be reduced to lmgZL or less.
- this solution was intermittently introduced into the power source side, that is, into the anode passquette, and was used as a cathode for electrolysis.
- Example 3 In the process of Example 3, anolyte was extracted intermittently, and the extracted anolyte was subjected to electrolysis at a current density of 0.1 A / dm 2 in a preliminary electrolysis tank, which was further subjected to electrolysis in the replacement tank of Example 4. Impurities such as iron, cobalt, and copper were removed under the same conditions as the substitution reaction (combination of preliminary electrolysis and substitution reaction). Except for this step, about 1.1 kg of electrodeposited nickel was obtained by the same steps as in Example 3. As a result, the purity was at least 5 N excluding gas components, and O: 10 w tp pm and C, N, S, P, and F as impurities were 10 wt pm or less, respectively. Table 2 shows the above results in comparison with the raw materials. Table 2
- the anode and the power source of the present invention were separated by a diaphragm, the anorite was intermittently or continuously extracted, and an oxidizing agent was added thereto to precipitate impurities such as iron as hydroxide.
- impurities such as iron as hydroxide.
- a nickel-containing solution is used as an electrolytic solution, and a simple method of electrolytically refining a nickel raw material containing a large amount of iron, carbon, oxygen, etc. using a nickel-containing solution is provided. This will have a remarkable effect if high-purity nickel with a purity of 5 N (99.99% by weight) or more can be efficiently produced from the same raw material by improving the production process.
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020047001269A KR100603130B1 (ko) | 2001-08-01 | 2001-10-22 | 고순도 니켈의 제조방법, 고순도 니켈, 동 고순도 니켈로부터 이루어진 스퍼터링 타겟트 및 이 스퍼터링 타겟트에 의해 형성된 박막 |
US10/471,112 US7435325B2 (en) | 2001-08-01 | 2001-10-22 | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
EP01978844A EP1413651A4 (en) | 2001-08-01 | 2001-10-22 | METHOD FOR THE PRODUCTION OF HIGH-PURITY NICKEL, HIGHLY NICKEL, THE HIGH-NICKEL CONTAINING SPUTTER TARGET AND THIN FILM SHOWN BY USING THE SPUTTER TARGET |
JP2003519547A JP3876253B2 (ja) | 2001-08-01 | 2001-10-22 | 高純度ニッケルの製造方法 |
US12/202,847 US20090004498A1 (en) | 2001-08-01 | 2008-09-02 | Manufacturing Method of High Purity Nickel, High Purity Nickel, Sputtering Target formed from said High Purity Nickel, and Thin Film formed with said Sputtering Target |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-233036 | 2001-08-01 | ||
JP2001233036 | 2001-08-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/202,847 Division US20090004498A1 (en) | 2001-08-01 | 2008-09-02 | Manufacturing Method of High Purity Nickel, High Purity Nickel, Sputtering Target formed from said High Purity Nickel, and Thin Film formed with said Sputtering Target |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003014421A1 true WO2003014421A1 (en) | 2003-02-20 |
Family
ID=19064862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/009237 WO2003014421A1 (en) | 2001-08-01 | 2001-10-22 | Method for producing high purity nickel, high purity nickel, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
Country Status (7)
Country | Link |
---|---|
US (2) | US7435325B2 (ja) |
EP (2) | EP2450474A1 (ja) |
JP (2) | JP3876253B2 (ja) |
KR (1) | KR100603130B1 (ja) |
CN (2) | CN1489642A (ja) |
TW (1) | TWI243215B (ja) |
WO (1) | WO2003014421A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003089835A (ja) * | 2001-09-17 | 2003-03-28 | Hitachi Metals Ltd | ニッケル材料 |
KR101397743B1 (ko) | 2010-09-24 | 2014-05-20 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 니켈의 제조 방법 |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7435325B2 (en) * | 2001-08-01 | 2008-10-14 | Nippon Mining & Metals Co., Ltd | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
KR20070086900A (ko) * | 2002-09-05 | 2007-08-27 | 닛코킨조쿠 가부시키가이샤 | 고순도 황산동 및 그 제조방법 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
US8871144B2 (en) * | 2003-10-07 | 2014-10-28 | Jx Nippon Mining & Metals Corporation | High-purity Ni-V alloy target therefrom high-purity Ni-V alloy thin film and process for producing high-purity Ni-V alloy |
JP4519775B2 (ja) * | 2004-01-29 | 2010-08-04 | 日鉱金属株式会社 | 超高純度銅及びその製造方法 |
KR101021488B1 (ko) * | 2004-03-01 | 2011-03-16 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | 니켈-플라티늄 합금 및 동(同) 합금 타겟트 |
CN1276129C (zh) * | 2004-07-28 | 2006-09-20 | 金川集团有限公司 | 一种制备高纯镍的方法 |
US7561406B2 (en) * | 2006-03-30 | 2009-07-14 | Tdk Corporation | Nickel substrate thin film capacitor and method of manufacturing nickel substrate thin film capacitor |
CN101063210B (zh) * | 2006-04-25 | 2010-05-26 | 襄樊化通化工有限责任公司 | 以含镍废料再生为原料制造高活性镍饼工艺 |
US8012337B2 (en) * | 2006-10-24 | 2011-09-06 | Jx Nippon Mining & Metals Corporation | Method for collection of valuable metal from ITO scrap |
JP5043029B2 (ja) * | 2006-10-24 | 2012-10-10 | Jx日鉱日石金属株式会社 | Itoスクラップからの有価金属の回収方法 |
WO2008053618A1 (fr) * | 2006-10-24 | 2008-05-08 | Nippon Mining & Metals Co., Ltd. | Procédé pour recueillir un métal de valeur à partir de fragments d'ito |
CA2666233C (en) * | 2006-10-24 | 2012-03-06 | Nippon Mining & Metals Co., Ltd. | Method for collection of valuable metal from ito scrap |
KR101155359B1 (ko) * | 2006-10-24 | 2012-06-19 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Ito 스크랩으로부터의 유가 금속의 회수 방법 |
CN101611173B (zh) * | 2007-02-16 | 2011-02-16 | Jx日矿日石金属株式会社 | 从含有导电氧化物的废料中回收有价值金属的方法 |
US8734633B2 (en) * | 2007-02-16 | 2014-05-27 | Jx Nippon Mining & Metals Corporation | Method of recovering valuable metal from scrap containing conductive oxide |
JP4210714B2 (ja) * | 2007-03-27 | 2009-01-21 | 日鉱金属株式会社 | 導電性のある酸化物を含有するスクラップからの有価金属の回収方法 |
CN101946027B (zh) * | 2008-02-12 | 2012-01-11 | Jx日矿日石金属株式会社 | 从izo废料中回收有价值金属的方法 |
JP5102317B2 (ja) * | 2008-02-12 | 2012-12-19 | Jx日鉱日石金属株式会社 | Izoスクラップからの有価金属の回収方法 |
CN101981233B (zh) * | 2008-03-06 | 2013-02-13 | Jx日矿日石金属株式会社 | 从izo废料中回收有价值金属的方法 |
CN101660123B (zh) * | 2008-08-28 | 2013-08-14 | 长沙天鹰金属材料有限公司 | 一种镍基靶材及生产工艺 |
WO2010038641A1 (ja) * | 2008-09-30 | 2010-04-08 | 日鉱金属株式会社 | 高純度銅及び電解による高純度銅の製造方法 |
WO2010038642A1 (ja) * | 2008-09-30 | 2010-04-08 | 日鉱金属株式会社 | 高純度銅又は高純度銅合金スパッタリングターゲット、同スパッタリングターゲットの製造方法及び高純度銅又は高純度銅合金スパッタ膜 |
US8460535B2 (en) * | 2009-04-30 | 2013-06-11 | Infinium, Inc. | Primary production of elements |
US8492891B2 (en) * | 2010-04-22 | 2013-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with electrolytic metal sidewall protection |
EP2684970A4 (en) * | 2011-03-07 | 2015-03-04 | Jx Nippon Mining & Metals Corp | COPPER OR COPPER ALLOY HAVING REDUCED RAY EMISSION AND CONNECTING WIRE OBTAINED FROM COPPER OR COPPER ALLOY AS RAW MATERIAL |
KR101364650B1 (ko) * | 2012-10-09 | 2014-02-19 | 한국과학기술연구원 | 전기분해를 이용한 니켈의 회수방법 |
CN103726069A (zh) * | 2012-10-13 | 2014-04-16 | 江西江锂科技有限公司 | 一种新型电解镍的生产方法 |
CN103046076B (zh) * | 2012-12-26 | 2016-06-08 | 浙江华友钴业股份有限公司 | 一种电积镍的制备方法 |
CN103966627B (zh) * | 2014-04-30 | 2017-01-11 | 兰州金川新材料科技股份有限公司 | 一种降低高纯钴中杂质Fe含量的方法 |
KR101570795B1 (ko) * | 2014-12-23 | 2015-11-23 | 인천화학 주식회사 | 불소 함유 니켈 슬라임으로부터 고순도 니켈의 제조방법 |
RU168849U1 (ru) * | 2016-05-24 | 2017-02-21 | Открытое акционерное общество "Тамбовское опытно-конструкторское технологическое бюро" (ОАО "Тамбовское ОКТБ") | Анодная ячейка для электровыделения цветных металлов из водных растворов |
CN111663153B (zh) * | 2020-05-20 | 2022-03-15 | 金川集团股份有限公司 | 一种镍电解过程中抑制杂质铅、锌在阴极析出的方法 |
CN111705334B (zh) * | 2020-05-27 | 2022-04-08 | 金川集团股份有限公司 | 一种提高纯硫酸盐体系下电积镍物理外观质量的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS314904B1 (ja) * | 1954-05-12 | 1956-06-23 | ||
JPH11152592A (ja) * | 1997-11-18 | 1999-06-08 | Japan Energy Corp | 高純度ニッケルの製造方法及び薄膜形成用高純度ニッケル材料 |
JP2000219988A (ja) * | 1999-02-01 | 2000-08-08 | Japan Energy Corp | 高純度ニッケル材の製造法及び薄膜形成用高純度ニッケル材 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA860872A (en) | 1971-01-12 | Zubryckyj Nicolas | Production of super-purity nickel powder | |
FR1384780A (fr) * | 1963-11-27 | 1965-01-08 | Nickel Le | Procédé de raffinage électrolytique d'un alliage de nickel, en vue de l'obtention de nickel pur électrolytique |
US3446720A (en) * | 1965-01-27 | 1969-05-27 | Us Interior | Preparation of high-purity nickel and cobalt |
FR1583920A (fr) * | 1968-06-21 | 1969-12-05 | Le Nickel S.A | Procede de purification de solutions de nickel |
US3616331A (en) * | 1968-08-03 | 1971-10-26 | Int Nickel Co | Recovery of nickel and copper from sulfides |
US4053400A (en) * | 1973-09-20 | 1977-10-11 | The Metalux Corporation | Purification of nickel and cobalt electroplating solutions |
CA1064856A (en) * | 1975-02-12 | 1979-10-23 | Alexander Illis | Purification of nickel electrolyte by electrolytic oxidation |
DE3712271A1 (de) * | 1987-04-10 | 1988-10-27 | Vacuumschmelze Gmbh | Nickelbasis-lot fuer hochtemperatur-loetverbindungen |
WO1992000395A1 (en) * | 1990-06-29 | 1992-01-09 | Kabushiki Kaisha Toshiba | Iron-nickel alloy |
US5192418A (en) * | 1991-07-08 | 1993-03-09 | Bethlehem Steel Corporation | Metal recovery method and system for electroplating wastes |
FR2686352B1 (fr) * | 1992-01-16 | 1995-06-16 | Framatome Sa | Appareil et procede de revetement electrolytique de nickel. |
JP3431148B2 (ja) * | 1992-04-01 | 2003-07-28 | アールエムジー サービス プロプライアタリー リミテッド | 金属の化合物からの金属の回収用の電気化学系 |
JPH06104120A (ja) * | 1992-08-03 | 1994-04-15 | Hitachi Metals Ltd | 磁気記録媒体用スパッタリングターゲットおよびその製造方法 |
TW271490B (ja) * | 1993-05-05 | 1996-03-01 | Varian Associates | |
US5458745A (en) * | 1995-01-23 | 1995-10-17 | Covofinish Co., Inc. | Method for removal of technetium from radio-contaminated metal |
JPH08311642A (ja) * | 1995-03-10 | 1996-11-26 | Toshiba Corp | マグネトロンスパッタリング法及びスパッタリングターゲット |
DE19609439A1 (de) * | 1995-03-14 | 1996-09-19 | Japan Energy Corp | Verfahren zum Erzeugen von hochreinem Kobalt und Sputtering-Targets aus hochreinem Kobalt |
US5964966A (en) * | 1997-09-19 | 1999-10-12 | Lockheed Martin Energy Research Corporation | Method of forming biaxially textured alloy substrates and devices thereon |
US6086725A (en) * | 1998-04-02 | 2000-07-11 | Applied Materials, Inc. | Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life |
JPH11335821A (ja) * | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ni−Fe合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ni−Fe合金スパッタリングターゲットの製造方法 |
JP2000054040A (ja) * | 1998-08-07 | 2000-02-22 | Sumitomo Metal Mining Co Ltd | ニッケル溶液の不純物除去方法 |
US6342114B1 (en) * | 1999-03-31 | 2002-01-29 | Praxair S.T. Technology, Inc. | Nickel/vanadium sputtering target with ultra-low alpha emission |
US6190516B1 (en) * | 1999-10-06 | 2001-02-20 | Praxair S.T. Technology, Inc. | High magnetic flux sputter targets with varied magnetic permeability in selected regions |
EP1288339B1 (en) * | 2000-05-22 | 2010-08-18 | Nippon Mining & Metals Co., Ltd. | Method of producing a higher-purity metal |
US6896776B2 (en) * | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
US7435325B2 (en) * | 2001-08-01 | 2008-10-14 | Nippon Mining & Metals Co., Ltd | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target |
JP4076751B2 (ja) * | 2001-10-22 | 2008-04-16 | 日鉱金属株式会社 | 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4034095B2 (ja) * | 2002-03-18 | 2008-01-16 | 日鉱金属株式会社 | 電気銅めっき方法及び電気銅めっき用含リン銅アノード |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
US7605481B2 (en) * | 2003-10-24 | 2009-10-20 | Nippon Mining & Metals Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
-
2001
- 2001-10-22 US US10/471,112 patent/US7435325B2/en not_active Expired - Fee Related
- 2001-10-22 CN CNA018225411A patent/CN1489642A/zh active Pending
- 2001-10-22 JP JP2003519547A patent/JP3876253B2/ja not_active Expired - Fee Related
- 2001-10-22 EP EP12153485A patent/EP2450474A1/en not_active Withdrawn
- 2001-10-22 KR KR1020047001269A patent/KR100603130B1/ko active IP Right Grant
- 2001-10-22 EP EP01978844A patent/EP1413651A4/en not_active Withdrawn
- 2001-10-22 WO PCT/JP2001/009237 patent/WO2003014421A1/ja active Application Filing
- 2001-10-22 CN CNA2005100712454A patent/CN1715454A/zh active Pending
-
2002
- 2002-07-15 TW TW091115671A patent/TWI243215B/zh not_active IP Right Cessation
-
2006
- 2006-07-14 JP JP2006193571A patent/JP4840808B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-02 US US12/202,847 patent/US20090004498A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS314904B1 (ja) * | 1954-05-12 | 1956-06-23 | ||
JPH11152592A (ja) * | 1997-11-18 | 1999-06-08 | Japan Energy Corp | 高純度ニッケルの製造方法及び薄膜形成用高純度ニッケル材料 |
JP2000219988A (ja) * | 1999-02-01 | 2000-08-08 | Japan Energy Corp | 高純度ニッケル材の製造法及び薄膜形成用高純度ニッケル材 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1413651A4 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003089835A (ja) * | 2001-09-17 | 2003-03-28 | Hitachi Metals Ltd | ニッケル材料 |
KR101397743B1 (ko) | 2010-09-24 | 2014-05-20 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 니켈의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20040019079A (ko) | 2004-03-04 |
CN1489642A (zh) | 2004-04-14 |
EP1413651A1 (en) | 2004-04-28 |
EP2450474A1 (en) | 2012-05-09 |
JP4840808B2 (ja) | 2011-12-21 |
JP2007046157A (ja) | 2007-02-22 |
US7435325B2 (en) | 2008-10-14 |
TWI243215B (en) | 2005-11-11 |
JPWO2003014421A1 (ja) | 2004-11-25 |
US20090004498A1 (en) | 2009-01-01 |
US20040069652A1 (en) | 2004-04-15 |
KR100603130B1 (ko) | 2006-07-20 |
JP3876253B2 (ja) | 2007-01-31 |
CN1715454A (zh) | 2006-01-04 |
EP1413651A4 (en) | 2006-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003014421A1 (en) | Method for producing high purity nickel, high purity nickel, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target | |
WO2001090445A1 (fr) | Procede de production de metal de purete superieure | |
JP4647695B2 (ja) | Itoスクラップからの有価金属の回収方法 | |
JPWO2008053619A1 (ja) | Itoスクラップからの有価金属の回収方法 | |
KR20030023640A (ko) | 금속처리방법, 그 방법에 사용되는 장치 및 그로부터제조된 금속 | |
JP2015187305A (ja) | インジウム又はインジウム合金の回収方法及び装置 | |
CN107815540A (zh) | 一种湿法冶炼金属镍钴及其盐类产品的方法 | |
JP6524973B2 (ja) | 高純度In及びその製造方法 | |
TWI252875B (en) | Method and device for producing high-purity metal | |
JP3825983B2 (ja) | 金属の高純度化方法 | |
JPH073486A (ja) | 高純度コバルト及びその製造方法 | |
KR20120031445A (ko) | 고순도 니켈의 제조 방법 | |
JP5993097B2 (ja) | 高純度塩化コバルトの製造方法 | |
JP2003183871A (ja) | 高純度錫の電解精製方法とその装置 | |
JP6318049B2 (ja) | 高純度In及びその製造方法 | |
JP3878402B2 (ja) | 金属の高純度化方法 | |
JP2005179778A (ja) | 高純度金属インジウムとその製造方法および用途 | |
JPH11315392A (ja) | コバルトの精製方法 | |
JP2570076B2 (ja) | 高純度ニッケルの製造方法 | |
JP3151195B2 (ja) | コバルトの精製方法 | |
JP3095730B2 (ja) | 高純度コバルトの製造方法 | |
JP2002146580A (ja) | 金属の高純度化方法 | |
Kumari et al. | Synthesis of electrolytic copper and nickel powders from the copper bleed electrolyte of a copper smelter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 2003519547 Country of ref document: JP |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN JP KR US Kind code of ref document: A1 Designated state(s): CN JP KR |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB IE IT LU MC NL PT SE TR |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 018225411 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10471112 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2001978844 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020047001269 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2001978844 Country of ref document: EP |