WO2002082553A1 - Dispositif semi-conducteur - Google Patents
Dispositif semi-conducteur Download PDFInfo
- Publication number
- WO2002082553A1 WO2002082553A1 PCT/JP2001/002933 JP0102933W WO02082553A1 WO 2002082553 A1 WO2002082553 A1 WO 2002082553A1 JP 0102933 W JP0102933 W JP 0102933W WO 02082553 A1 WO02082553 A1 WO 02082553A1
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- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- base area
- increasing
- source electrode
- lower base
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Priority Applications (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB01810665XA CN1265465C (zh) | 2001-04-04 | 2001-04-04 | 半导体器件 |
EP11174237A EP2381480A1 (en) | 2001-04-04 | 2001-04-04 | Semiconductor device with a drain layer |
CNB2006100844956A CN100477268C (zh) | 2001-04-04 | 2001-04-04 | 半导体器件 |
EP11174240A EP2383789A1 (en) | 2001-04-04 | 2001-04-04 | Semiconductor device having a conductive field plate layer |
EP01919781.3A EP1291925B1 (en) | 2001-04-04 | 2001-04-04 | Semiconductor device |
EP11174233.4A EP2387077B1 (en) | 2001-04-04 | 2001-04-04 | Semiconductor device with a peripheral base region |
TW090108084A TWI236134B (en) | 2001-04-04 | 2001-04-04 | Semiconductor device |
US10/296,220 US7180106B2 (en) | 2001-04-04 | 2001-04-04 | Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance |
EP11174242.5A EP2383790B1 (en) | 2001-04-04 | 2001-04-04 | Semiconductor device with a drain region underlying a gate contact pad |
EP11174230.0A EP2383788B1 (en) | 2001-04-04 | 2001-04-04 | Semiconductor device with a main base region |
JP2002565148A JP4837236B2 (ja) | 2001-04-04 | 2001-04-04 | 半導体装置 |
CN200910006671.8A CN101488500B (zh) | 2001-04-04 | 2001-04-04 | 半导体器件 |
PCT/JP2001/002933 WO2002082553A1 (fr) | 2001-04-04 | 2001-04-04 | Dispositif semi-conducteur |
US11/612,341 US8183631B2 (en) | 2001-04-04 | 2006-12-18 | Semiconductor device |
US13/308,028 US8692323B2 (en) | 2001-04-04 | 2011-11-30 | Semiconductor device with peripheral base region connected to main electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2001/002933 WO2002082553A1 (fr) | 2001-04-04 | 2001-04-04 | Dispositif semi-conducteur |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10296220 A-371-Of-International | 2001-04-04 | ||
US11/612,341 Division US8183631B2 (en) | 2001-04-04 | 2006-12-18 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002082553A1 true WO2002082553A1 (fr) | 2002-10-17 |
Family
ID=11737226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2001/002933 WO2002082553A1 (fr) | 2001-04-04 | 2001-04-04 | Dispositif semi-conducteur |
Country Status (6)
Country | Link |
---|---|
US (3) | US7180106B2 (ja) |
EP (6) | EP2383789A1 (ja) |
JP (1) | JP4837236B2 (ja) |
CN (3) | CN100477268C (ja) |
TW (1) | TWI236134B (ja) |
WO (1) | WO2002082553A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014112739A (ja) * | 2014-03-19 | 2014-06-19 | Toshiba Corp | 半導体装置 |
US9082814B2 (en) | 2011-01-12 | 2015-07-14 | Hitachi Power Semiconductor Device, Ltd. | Semiconductor devices and power conversion systems |
WO2018155553A1 (ja) * | 2017-02-24 | 2018-08-30 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
WO2018155566A1 (ja) * | 2017-02-24 | 2018-08-30 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4865166B2 (ja) * | 2001-08-30 | 2012-02-01 | 新電元工業株式会社 | トランジスタの製造方法、ダイオードの製造方法 |
US7786533B2 (en) | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
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Also Published As
Publication number | Publication date |
---|---|
CN1432197A (zh) | 2003-07-23 |
CN1265465C (zh) | 2006-07-19 |
EP2387077B1 (en) | 2019-07-31 |
CN101488500A (zh) | 2009-07-22 |
US7180106B2 (en) | 2007-02-20 |
EP2383789A1 (en) | 2011-11-02 |
EP2381480A1 (en) | 2011-10-26 |
CN101488500B (zh) | 2016-01-27 |
EP1291925B1 (en) | 2019-07-31 |
EP1291925A4 (en) | 2009-10-21 |
JPWO2002082553A1 (ja) | 2004-07-29 |
TWI236134B (en) | 2005-07-11 |
EP2387077A2 (en) | 2011-11-16 |
US20030132499A1 (en) | 2003-07-17 |
US8183631B2 (en) | 2012-05-22 |
EP1291925A1 (en) | 2003-03-12 |
US20120080744A1 (en) | 2012-04-05 |
EP2387077A3 (en) | 2013-08-21 |
EP2383788A1 (en) | 2011-11-02 |
US20070096166A1 (en) | 2007-05-03 |
JP4837236B2 (ja) | 2011-12-14 |
US8692323B2 (en) | 2014-04-08 |
EP2383790B1 (en) | 2019-07-24 |
EP2383790A1 (en) | 2011-11-02 |
CN100477268C (zh) | 2009-04-08 |
EP2383788B1 (en) | 2019-07-24 |
CN1862833A (zh) | 2006-11-15 |
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