ATE340412T1 - Mehrchipmodulhalbleiterbauelemente - Google Patents

Mehrchipmodulhalbleiterbauelemente

Info

Publication number
ATE340412T1
ATE340412T1 AT02803890T AT02803890T ATE340412T1 AT E340412 T1 ATE340412 T1 AT E340412T1 AT 02803890 T AT02803890 T AT 02803890T AT 02803890 T AT02803890 T AT 02803890T AT E340412 T1 ATE340412 T1 AT E340412T1
Authority
AT
Austria
Prior art keywords
connections
die
flip chip
bump electrodes
circuit
Prior art date
Application number
AT02803890T
Other languages
English (en)
Inventor
Nicolas J Wheeler
Philip Rutter
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE340412T1 publication Critical patent/ATE340412T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73205—Bump and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
AT02803890T 2001-11-27 2002-11-20 Mehrchipmodulhalbleiterbauelemente ATE340412T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0128351.4A GB0128351D0 (en) 2001-11-27 2001-11-27 Multi-chip module semiconductor devices

Publications (1)

Publication Number Publication Date
ATE340412T1 true ATE340412T1 (de) 2006-10-15

Family

ID=9926506

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02803890T ATE340412T1 (de) 2001-11-27 2002-11-20 Mehrchipmodulhalbleiterbauelemente

Country Status (10)

Country Link
US (1) US6919643B2 (de)
EP (1) EP1468449B1 (de)
JP (1) JP2005510878A (de)
CN (1) CN100442504C (de)
AT (1) ATE340412T1 (de)
AU (1) AU2002365494A1 (de)
DE (1) DE60214894T2 (de)
GB (1) GB0128351D0 (de)
TW (1) TWI281731B (de)
WO (1) WO2003046989A2 (de)

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JP4142922B2 (ja) * 2002-09-12 2008-09-03 株式会社ルネサステクノロジ ストロボ制御回路、ｉｇｂｔデバイス、半導体装置および電子機器
JP2004247373A (ja) * 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置
US7929921B2 (en) * 2003-06-10 2011-04-19 Motorola Mobility, Inc. Diversity control in wireless communications devices and methods
JP4658481B2 (ja) * 2004-01-16 2011-03-23 ルネサスエレクトロニクス株式会社 半導体装置
JP4489485B2 (ja) * 2004-03-31 2010-06-23 株式会社ルネサステクノロジ 半導体装置
US7301235B2 (en) * 2004-06-03 2007-11-27 International Rectifier Corporation Semiconductor device module with flip chip devices on a common lead frame
US7230333B2 (en) * 2005-04-21 2007-06-12 International Rectifier Corporation Semiconductor package
EP1841249B1 (de) 2006-03-28 2009-05-13 Samsung Electronics Co., Ltd. Verfahren und Vorrichtung zum diskontinuierlichen Empfang eines angeschlossenen Endgeräts in einem mobilen Kommunikationssystem
US7569920B2 (en) * 2006-05-10 2009-08-04 Infineon Technologies Ag Electronic component having at least one vertical semiconductor power transistor
US7271470B1 (en) 2006-05-31 2007-09-18 Infineon Technologies Ag Electronic component having at least two semiconductor power devices
US7683477B2 (en) * 2007-06-26 2010-03-23 Infineon Technologies Ag Semiconductor device including semiconductor chips having contact elements
US8064224B2 (en) 2008-03-31 2011-11-22 Intel Corporation Microelectronic package containing silicon patches for high density interconnects, and method of manufacturing same
US8148815B2 (en) * 2008-10-13 2012-04-03 Intersil Americas, Inc. Stacked field effect transistor configurations
US8168490B2 (en) * 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
EP2209138A3 (de) 2008-12-23 2012-07-04 Intersil Americas Inc. Co-Packaging-Ansatz für Leistungswandler basierend auf planaren Bauelementen, Struktur und Verfahren
JP5381444B2 (ja) * 2009-07-17 2014-01-08 トヨタ自動車株式会社 パワーモジュール
JP5123966B2 (ja) * 2010-03-04 2013-01-23 ルネサスエレクトロニクス株式会社 半導体装置
EP2482312A4 (de) * 2011-04-29 2012-09-26 Huawei Tech Co Ltd Stromversorgungsmodul sowie verpackungs- und integrationsverfahren dafür
WO2012152316A1 (en) * 2011-05-10 2012-11-15 Abb Research Ltd Power module and method of operating a power module
US8614503B2 (en) * 2011-05-19 2013-12-24 International Rectifier Corporation Common drain exposed conductive clip for high power semiconductor packages
CN102832189B (zh) 2012-09-11 2014-07-16 矽力杰半导体技术(杭州)有限公司 一种多芯片封装结构及其封装方法
JP5493021B2 (ja) * 2013-03-08 2014-05-14 ルネサスエレクトロニクス株式会社 半導体装置
CN103762214B (zh) * 2014-01-24 2016-08-17 矽力杰半导体技术(杭州)有限公司 应用于开关型调节器的集成电路组件
DE102015112502B4 (de) 2015-07-30 2021-11-04 Infineon Technologies Ag Halbleiterbauelemente
WO2017091152A1 (en) * 2015-11-23 2017-06-01 Agency For Science, Technology And Research Wafer level integration of high power switching devices on cmos driver integrated circuit
CN110034087A (zh) * 2019-05-06 2019-07-19 上海金克半导体设备有限公司 一种多芯片封装晶体管
DE102022111517A1 (de) 2022-05-09 2023-11-09 Infineon Technologies Ag Ein halbleiterbauelement mit einem eingebetteten elektrischen leiter, der zwischen pins eines halbleiterbauelements und einem weiteren bauelement angeschlossen ist
TWI800381B (zh) * 2022-05-19 2023-04-21 璦司柏電子股份有限公司 內建閘極驅動晶片的覆晶封裝功率電晶體模組
CN116190370B (zh) * 2023-04-04 2023-08-22 南京理工大学 一种级联型GaN功率器件封装结构

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JP3123343B2 (ja) * 1994-05-11 2001-01-09 富士電機株式会社 安定化電源装置とその製造方法
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JP3943395B2 (ja) * 2000-03-22 2007-07-11 インターナショナル・レクチファイヤー・コーポレーション ゲートドライバマルチチップモジュール
KR100559664B1 (ko) * 2000-03-25 2006-03-10 앰코 테크놀로지 코리아 주식회사 반도체패키지
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Also Published As

Publication number Publication date
TWI281731B (en) 2007-05-21
WO2003046989A2 (en) 2003-06-05
US6919643B2 (en) 2005-07-19
CN100442504C (zh) 2008-12-10
DE60214894T2 (de) 2007-04-26
US20030098468A1 (en) 2003-05-29
EP1468449B1 (de) 2006-09-20
AU2002365494A1 (en) 2003-06-10
DE60214894D1 (de) 2006-11-02
JP2005510878A (ja) 2005-04-21
CN1596473A (zh) 2005-03-16
WO2003046989A3 (en) 2003-10-09
GB0128351D0 (en) 2002-01-16
TW200409307A (en) 2004-06-01
EP1468449A2 (de) 2004-10-20

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