CN1596473A - 多芯片模块半导体器件 - Google Patents
多芯片模块半导体器件 Download PDFInfo
- Publication number
- CN1596473A CN1596473A CNA028235274A CN02823527A CN1596473A CN 1596473 A CN1596473 A CN 1596473A CN A028235274 A CNA028235274 A CN A028235274A CN 02823527 A CN02823527 A CN 02823527A CN 1596473 A CN1596473 A CN 1596473A
- Authority
- CN
- China
- Prior art keywords
- power transistor
- lead frame
- electrode
- rabbet joint
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/40247—Connecting the strap to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73205—Bump and strap connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0128351.4A GB0128351D0 (en) | 2001-11-27 | 2001-11-27 | Multi-chip module semiconductor devices |
GB0128351.4 | 2001-11-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1596473A true CN1596473A (zh) | 2005-03-16 |
CN100442504C CN100442504C (zh) | 2008-12-10 |
Family
ID=9926506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028235274A Expired - Fee Related CN100442504C (zh) | 2001-11-27 | 2002-11-20 | 多芯片模块半导体器件 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6919643B2 (zh) |
EP (1) | EP1468449B1 (zh) |
JP (1) | JP2005510878A (zh) |
CN (1) | CN100442504C (zh) |
AT (1) | ATE340412T1 (zh) |
AU (1) | AU2002365494A1 (zh) |
DE (1) | DE60214894T2 (zh) |
GB (1) | GB0128351D0 (zh) |
TW (1) | TWI281731B (zh) |
WO (1) | WO2003046989A2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102832189A (zh) * | 2012-09-11 | 2012-12-19 | 矽力杰半导体技术(杭州)有限公司 | 一种多芯片封装结构及其封装方法 |
CN101990709B (zh) * | 2008-12-23 | 2013-06-12 | 英特赛尔美国股份有限公司 | 层叠的功率转换器结构和方法 |
CN103762214A (zh) * | 2014-01-24 | 2014-04-30 | 矽力杰半导体技术(杭州)有限公司 | 应用于开关型调节器的集成电路组件 |
CN116190370A (zh) * | 2023-04-04 | 2023-05-30 | 南京理工大学 | 一种级联型GaN功率器件封装结构 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4142922B2 (ja) * | 2002-09-12 | 2008-09-03 | 株式会社ルネサステクノロジ | ストロボ制御回路、igbtデバイス、半導体装置および電子機器 |
JP2004247373A (ja) * | 2003-02-12 | 2004-09-02 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US7929921B2 (en) * | 2003-06-10 | 2011-04-19 | Motorola Mobility, Inc. | Diversity control in wireless communications devices and methods |
JP4658481B2 (ja) * | 2004-01-16 | 2011-03-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4489485B2 (ja) | 2004-03-31 | 2010-06-23 | 株式会社ルネサステクノロジ | 半導体装置 |
US7301235B2 (en) * | 2004-06-03 | 2007-11-27 | International Rectifier Corporation | Semiconductor device module with flip chip devices on a common lead frame |
US7230333B2 (en) | 2005-04-21 | 2007-06-12 | International Rectifier Corporation | Semiconductor package |
EP1841249B1 (en) | 2006-03-28 | 2009-05-13 | Samsung Electronics Co., Ltd. | Method and apparatus for discontinuous reception of connected terminal in a mobile communication system |
US7569920B2 (en) * | 2006-05-10 | 2009-08-04 | Infineon Technologies Ag | Electronic component having at least one vertical semiconductor power transistor |
US7271470B1 (en) | 2006-05-31 | 2007-09-18 | Infineon Technologies Ag | Electronic component having at least two semiconductor power devices |
US7683477B2 (en) * | 2007-06-26 | 2010-03-23 | Infineon Technologies Ag | Semiconductor device including semiconductor chips having contact elements |
US8064224B2 (en) | 2008-03-31 | 2011-11-22 | Intel Corporation | Microelectronic package containing silicon patches for high density interconnects, and method of manufacturing same |
US8148815B2 (en) * | 2008-10-13 | 2012-04-03 | Intersil Americas, Inc. | Stacked field effect transistor configurations |
EP2209138A3 (en) | 2008-12-23 | 2012-07-04 | Intersil Americas Inc. | Co-packaging approach for power converters based on planar devices, structure and method |
JP5381444B2 (ja) * | 2009-07-17 | 2014-01-08 | トヨタ自動車株式会社 | パワーモジュール |
JP5123966B2 (ja) * | 2010-03-04 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR20120123254A (ko) * | 2011-04-29 | 2012-11-08 | 후아웨이 테크놀러지 컴퍼니 리미티드 | 전력 공급 모듈 및 이의 패키징 및 집적 방법 |
EP2707956A1 (en) * | 2011-05-10 | 2014-03-19 | ABB Research Ltd. | Power module and method of operating a power module |
US8614503B2 (en) * | 2011-05-19 | 2013-12-24 | International Rectifier Corporation | Common drain exposed conductive clip for high power semiconductor packages |
JP5493021B2 (ja) * | 2013-03-08 | 2014-05-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102015112502B4 (de) | 2015-07-30 | 2021-11-04 | Infineon Technologies Ag | Halbleiterbauelemente |
WO2017091152A1 (en) * | 2015-11-23 | 2017-06-01 | Agency For Science, Technology And Research | Wafer level integration of high power switching devices on cmos driver integrated circuit |
CN110034087B (zh) * | 2019-05-06 | 2024-07-02 | 上海金克半导体设备有限公司 | 一种多芯片封装晶体管 |
DE102022111517B4 (de) | 2022-05-09 | 2024-09-05 | Infineon Technologies Ag | Ein halbleiterpackage mit einem eingebetteten elektrischen leiter, der zwischen pins eines halbleiterbauelements und einem weiteren bauelement angeschlossen ist |
TWI800381B (zh) * | 2022-05-19 | 2023-04-21 | 璦司柏電子股份有限公司 | 內建閘極驅動晶片的覆晶封裝功率電晶體模組 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3123343B2 (ja) | 1994-05-11 | 2001-01-09 | 富士電機株式会社 | 安定化電源装置とその製造方法 |
US5532512A (en) | 1994-10-03 | 1996-07-02 | General Electric Company | Direct stacked and flip chip power semiconductor device structures |
US5608262A (en) * | 1995-02-24 | 1997-03-04 | Lucent Technologies Inc. | Packaging multi-chip modules without wire-bond interconnection |
TW373308B (en) * | 1995-02-24 | 1999-11-01 | Agere Systems Inc | Thin packaging of multi-chip modules with enhanced thermal/power management |
US5869894A (en) * | 1997-07-18 | 1999-02-09 | Lucent Technologies Inc. | RF IC package |
SE520119C2 (sv) | 1998-10-13 | 2003-05-27 | Ericsson Telefon Ab L M | Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar |
JP2000294692A (ja) | 1999-04-06 | 2000-10-20 | Hitachi Ltd | 樹脂封止型電子装置及びその製造方法並びにそれを使用した内燃機関用点火コイル装置 |
WO2001072092A1 (en) * | 2000-03-22 | 2001-09-27 | International Rectifier Corporation | Gate driver multi-chip module |
KR100559664B1 (ko) * | 2000-03-25 | 2006-03-10 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지 |
US6600220B2 (en) * | 2001-05-14 | 2003-07-29 | Hewlett-Packard Company | Power distribution in multi-chip modules |
-
2001
- 2001-11-27 GB GBGB0128351.4A patent/GB0128351D0/en not_active Ceased
-
2002
- 2002-11-20 WO PCT/IB2002/004908 patent/WO2003046989A2/en active IP Right Grant
- 2002-11-20 JP JP2003548309A patent/JP2005510878A/ja active Pending
- 2002-11-20 EP EP02803890A patent/EP1468449B1/en not_active Expired - Lifetime
- 2002-11-20 CN CNB028235274A patent/CN100442504C/zh not_active Expired - Fee Related
- 2002-11-20 AU AU2002365494A patent/AU2002365494A1/en not_active Abandoned
- 2002-11-20 AT AT02803890T patent/ATE340412T1/de not_active IP Right Cessation
- 2002-11-20 DE DE60214894T patent/DE60214894T2/de not_active Expired - Lifetime
- 2002-11-21 US US10/301,200 patent/US6919643B2/en not_active Expired - Lifetime
- 2002-11-25 TW TW091134175A patent/TWI281731B/zh not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101990709B (zh) * | 2008-12-23 | 2013-06-12 | 英特赛尔美国股份有限公司 | 层叠的功率转换器结构和方法 |
CN102832189A (zh) * | 2012-09-11 | 2012-12-19 | 矽力杰半导体技术(杭州)有限公司 | 一种多芯片封装结构及其封装方法 |
CN103762214A (zh) * | 2014-01-24 | 2014-04-30 | 矽力杰半导体技术(杭州)有限公司 | 应用于开关型调节器的集成电路组件 |
CN103762214B (zh) * | 2014-01-24 | 2016-08-17 | 矽力杰半导体技术(杭州)有限公司 | 应用于开关型调节器的集成电路组件 |
CN116190370A (zh) * | 2023-04-04 | 2023-05-30 | 南京理工大学 | 一种级联型GaN功率器件封装结构 |
CN116190370B (zh) * | 2023-04-04 | 2023-08-22 | 南京理工大学 | 一种级联型GaN功率器件封装结构 |
Also Published As
Publication number | Publication date |
---|---|
GB0128351D0 (en) | 2002-01-16 |
AU2002365494A1 (en) | 2003-06-10 |
DE60214894D1 (de) | 2006-11-02 |
US20030098468A1 (en) | 2003-05-29 |
CN100442504C (zh) | 2008-12-10 |
JP2005510878A (ja) | 2005-04-21 |
EP1468449A2 (en) | 2004-10-20 |
US6919643B2 (en) | 2005-07-19 |
ATE340412T1 (de) | 2006-10-15 |
WO2003046989A3 (en) | 2003-10-09 |
EP1468449B1 (en) | 2006-09-20 |
WO2003046989A2 (en) | 2003-06-05 |
DE60214894T2 (de) | 2007-04-26 |
TWI281731B (en) | 2007-05-21 |
TW200409307A (en) | 2004-06-01 |
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