WO2001081661A1 - Tranche de silicium monocristallin, son procede d'elaboration et procede d'obtention d'une tranche de silicium monocristallin - Google Patents

Tranche de silicium monocristallin, son procede d'elaboration et procede d'obtention d'une tranche de silicium monocristallin Download PDF

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Publication number
WO2001081661A1
WO2001081661A1 PCT/JP2001/003317 JP0103317W WO0181661A1 WO 2001081661 A1 WO2001081661 A1 WO 2001081661A1 JP 0103317 W JP0103317 W JP 0103317W WO 0181661 A1 WO0181661 A1 WO 0181661A1
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Prior art keywords
silicon single
single crystal
wafer
silicon
crystal wafer
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PCT/JP2001/003317
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English (en)
Japanese (ja)
Inventor
Izumi Fusegawa
Hiromi Watanabe
Shigemaru Maeda
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Shin-Etsu Handotai Co.,Ltd.
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Priority to JP2001578727A priority Critical patent/JP4096557B2/ja
Publication of WO2001081661A1 publication Critical patent/WO2001081661A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the present invention relates to a high-quality silicon single crystal wafer manufactured by the CZ method (Chiyoklarsky method) used for manufacturing a semiconductor device, and a method for manufacturing the same. More specifically, a silicon wafer manufactured from a single crystal grown by the CZ method, and the uniformity of the electrical characteristics, in which the concentration of heavy metal impurities, particularly the Fe (iron) concentration, has been reduced to the outermost region of the wafer.
  • the present invention relates to extremely high quality silicon wafers and a method for producing the same. Background art
  • items related to quality can be divided into items related to the shape of A-E8 and items related to the crystal quality of silicon single crystals.
  • Items related to e-shape, such as surface flatness and warpage, are strongly related to the device manufacturing process, such as wiring pattern formation in the photolithography process and adsorption to the stage in the etching and film formation process.
  • the area of the periphery of the wafer becomes particularly large, so that the effect of improving the yield in the peripheral area of the wafer becomes high.
  • such a large-diameter wafer requires a silicon wafer having high uniformity up to the outermost peripheral region of the wafer, which has not been a problem in the past.
  • the CZ method of growing and pulling single crystals from a melt in a quartz crucible is widely used.
  • a seed crystal is immersed in a silicon melt in a quartz crucible under an inert gas atmosphere, and the quartz crucible and the seed crystal are slowly pulled up while rotating. This is to produce a con single crystal.
  • a quartz crucible is used, so that the silicon melt reacts with the quartz and oxygen atoms are eluted in the silicon melt, and a part of the oxygen atoms elutes into the growing silicon single crystal.
  • Incorporated to provide an effect of improving mechanical strength and to be a gettering source for heavy metal impurities mixed in during the manufacture of semiconductor integrated circuit devices.
  • most of the oxygen atoms evaporate from the melt surface as silicon oxides, and some of them adhere to components in the pulling furnace. If such deposits fall onto the surface of the silicon melt, they adhere to the growing silicon single crystal, causing dislocation troubles, and significantly lower the yield of the single crystal product.
  • a rectifying cylinder is often used to rectify the inert gas introduced into the upper furnace and efficiently discharge such oxides from the silicon melt.
  • the rectifying cylinder referred to in the present invention is an inert gas that is disposed so as to surround a silicon single crystal grown on the silicon melt surface in the CZ method and is introduced from the upper part of the chamber of the CZ device.
  • a substance that acts to regulate the flow of gas. Therefore, the rectifying cylinder referred to here is a member arranged close to the grown crystal having the above function.
  • the term is used as a generic term, and does not imply any particular language or name. Includes heat shields, heat insulators, etc., which are placed close to the crystal.
  • the diameter of the silicon single crystal to be grown becomes large, the speed at which the crystal is pulled must be reduced, the silicon melt becomes large, and the oxygen supply increases due to the increase in the size of the quartz crucible. Since the amount of oxides increases, dislocation troubles in the silicon single crystal are likely to occur. Therefore, in order to produce a silicon single crystal with a large diameter of 200 mm or more at a high yield, it is necessary to arrange a rectifying cylinder in the CZ device.
  • one of the quality evaluations of silicon wafers is the lifetime of a minority carrier. This carrier lifetime indicates the time it takes for electron-hole pairs generated when high-energy pulsed light is incident on the silicon surface to return to the original thermal equilibrium state by recombination.
  • the present invention has been made in view of the above points, and it is an object of the present invention to provide a substrate for manufacturing a semiconductor integrated circuit element capable of obtaining a high yield without deterioration in characteristics even at the outermost periphery of the wafer. Furthermore, even in the case of producing large-diameter crystals, it is possible to reduce the heavy metal contamination around the wafer to the utmost and to provide an industrially efficient method for producing silicon single crystals by using a rectifying cylinder with moderate purity. It is in.
  • the present invention for solving the above problems is directed to a silicon single crystal wafer produced from a silicon single crystal grown by a CZ method, wherein the silicon single crystal wafer has an Fe concentration of 1 XIO ⁇ atoms / A silicon single crystal wafer having a size of not more than cm 3 .
  • the silicon single crystal grown by the CZ method has a Fe concentration of 1 XIO i Q atoms / cm 3 or less
  • the silicon single crystal grown with the carrier has a carrier as described above. Silicon single crystal wafers that are unlikely to cause problems such as a reduction in lifetime can be used.
  • the CZ wafer it is easy to increase the diameter of the wafer, the yield of semiconductor elements obtained from the outer periphery thereof is also improved, and the overall yield of semiconductor manufacturing can be improved.
  • the present invention is also directed to a silicon single crystal wafer manufactured from a silicon single crystal grown by the cZ method, wherein the carrier lifetime variation width over the entire surface of the silicon single crystal wafer is set to (maximum value).
  • (Single minimum value) A silicon single crystal wafer, characterized in that the fluctuation range when expressed by the Z maximum value is 50% or less.
  • the silicon single crystal silicon wafer having a small variation in carrier lifetime over the entire surface of the silicon wafer can have a small variation in electrical characteristics of a semiconductor device manufactured on the surface layer of the silicon wafer.
  • such a wafer is particularly advantageous when a device is formed on a large-diameter wafer because the carrier lifetime in the periphery of the wafer can be kept small.
  • the present invention relates to a silicon single crystal wafer manufactured from a silicon single crystal grown by the cZ method, wherein an e concentration of 10% around the silicon single crystal wafer is 1 XI 0
  • This is a silicon single crystal wafer having a density of 10 atoms Z cm 3 or less.
  • a silicon single crystal wafer having a Fe concentration of 10% or less around the silicon single crystal wafer at 1 ⁇ 10 10 atoms Z cm 3 or less has a large diameter even if the wafer has a large diameter.
  • the carrier lifetime in the peripheral portion is hardly reduced, and the yield of device fabrication can be improved.
  • 10% around the eha is the distance from the outermost periphery of the eha to the It means the outer edge within 10% in diameter.
  • the diameter can be 20 O mm or more.
  • the silicon single crystal wafer of the present invention is a silicon single crystal wafer manufactured from a silicon single crystal grown using a rectifying tube in the cZ method. ⁇ It is Eha.
  • the present invention provides a method for producing a silicon single crystal in which a silicon single crystal is grown while surrounding the silicon single crystal with a rectifying cylinder in the CZ method, wherein the Fe concentration on the surface is 0.05 ppm or less.
  • a method for producing a silicon single crystal characterized in that a silicon single crystal is grown using a rectifying cylinder having a film formed thereon.
  • the film applied to the flow straightening cylinder can sufficiently exhibit its effect even if the coating is applied only to the inner surface of the flow straightening cylinder facing the grown crystal, or the coating can be applied to the entire flow straightening cylinder.
  • These options depend on the method and cost of coating on the flow straightening tube, or the furnace internal structure. It should be selected variously for reasons such as the design of the product.
  • the film is preferably made of pyrolytic carbon or silicon carbide. If the film is made of pyrolytic carbon or silicon carbide in this way, the Fe concentration on the surface of the flow regulating cylinder can be easily kept low, and high purity can be maintained.
  • the thickness of the film is preferably 30 // m or more.
  • the film thickness is 30 / zm or more, the volatilization of heavy metals such as Fe from the surface of the rectifying cylinder can be sufficiently prevented, and the film is sufficiently resistant to long-time use at high temperatures. It becomes something that can be obtained.
  • a silicon single crystal wafer is manufactured from the silicon single crystal of the present invention, a silicon single crystal wafer with a small carrier lifetime variation over the entire surface of the wafer even with a large diameter can be easily manufactured. be able to.
  • the present invention also provides a flow regulating cylinder arranged so as to surround a silicon single crystal grown in the CZ method, and for regulating the flow of an inert gas introduced from the top of the chamber of the cZ apparatus.
  • the rectifying cylinder is characterized in that a film with an Fe concentration of 0.05 ppm or less is formed on the rectifying cylinder.
  • Such a flow straightening tube surely prevents Fe contamination from occurring in a single crystal grown from the flow straightening tube, and can improve the quality and yield particularly in the production of large-diameter silicon single crystals.
  • the film is preferably made of pyrolytic carbon or silicon carbide. If the film is made of pyrolytic carbon or silicon carbide in this way, the Fe concentration on the surface of the flow regulating cylinder can be easily kept low, and high purity can be maintained.
  • the thickness of the film is preferably 30 / m or more.
  • the film thickness is 30 ⁇ or more, it is possible to sufficiently prevent the volatilization of heavy metals such as Fe from the surface of the rectifying cylinder, and to sufficiently withstand long-time use at high temperatures. It becomes something that can be obtained.
  • the apparatus for producing a silicon single crystal having the rectifying cylinder of the present invention can reliably prevent Fe contamination from occurring in the single crystal grown from the rectifying cylinder. Can be manufactured with high productivity.
  • a rectifying cylinder used for growing a silicon single crystal. Since a high-purity film is formed on the surface of the silicon single crystal, heavy metal impurities do not adhere to the surface of the silicon single crystal since vapor containing heavy metal generated from the rectifying tube during the growth of the single crystal is not generated. Even at high temperatures, heavy metal impurities do not diffuse into the crystal, so that heavy metal contamination, especially in the peripheral area, is reduced to the utmost.
  • a silicon wafer manufactured from the silicon single crystal according to the present invention at the time of manufacturing a semiconductor device, high purity can be maintained up to the outermost peripheral region of the wafer, thereby improving the manufacturing yield of the semiconductor integrated circuit device.
  • FIG. 4 is a diagram showing the in-plane distribution of the Fe concentration when the in-plane Fe concentration is measured.
  • FIG. 2 shows that a silicon single crystal was grown using a rectifying cylinder made of silicon carbide film, the single crystal was processed into wafers, and the in-plane Fe concentration was measured by the SPV method.
  • FIG. 4 is a diagram showing a concentration in-plane distribution of the present invention.
  • FIG. 3 shows the results when a silicon single crystal was grown using a rectifying cylinder with no coating, the single crystal was processed into a wafer, and the in-plane Fe concentration was measured by the SPV method.
  • FIG. 4 is a diagram showing the in-plane distribution of the Fe concentration of FIG.
  • Figure 4 is a diagram showing the outline of a crystal pulling device equipped with a flow straightening tube.
  • the present inventors have found that the life time varies in the plane of the eaves, and that the life time in the peripheral area is lower than that in the vicinity of the center of the eaves, and that a certain regularity is observed. As a result of repeated experimental studies, it was found that the cause of the decrease in the lifetime was due to impurities present in the ewa, especially Fe contamination. Then, the present inventors observed a pattern of Fe contamination appearing on the silicon wafer surface in an outer peripheral region of about 20 to 30 mm from the periphery.
  • Figure 3 is an in-plane Fe concentration map showing an example of measurement of in-plane Fe contamination of silicon wafers produced from crystals grown by the conventional silicon single crystal growth method.
  • the crystal is grown by the silicon single crystal manufacturing apparatus 11 shown in FIG. 4, and this apparatus 11 includes a rectifying cylinder 4 made of a graphite material.
  • this apparatus 11 120 kg of polysilicon was charged into a quartz crucible 5 having a diameter of 56 cm to dissolve the polycrystal, and then a seed crystal having a (001) plane was melted. Then, a boron-doped silicon single crystal 3 having a diameter of 200 mm and a specific resistance adjusted to 10 ⁇ ⁇ cm was grown through a drawing step.
  • a silicon single crystal wafer was produced through various processes necessary for industrial production of ordinary silicon wafers, such as cylindrical polishing, slicing, lapping, and polishing of the grown silicon single crystal. .
  • Fe concentration measurement of the wafer was performed by the SPV method (Surface Photovoltage Method).
  • SPV method Surface Photovoltage Method
  • Fe dissolved in a boron-doped silicon single crystal is combined with boron as a dopant at room temperature and stabilized in the form of Fe_B (iron-boron pair).
  • the binding energy of F e — B is about 0.68 eV, 200 ° C
  • Fei interstitial iron atom
  • the diffusion length of minority carriers was long before the heat treatment at about 200 ° C, but the diffusion length of minority carriers becomes short after the heat treatment because Fei acts as a recombination center. Therefore, in the SPV method, the Fe concentration can be measured by measuring the difference. In addition, the measurement results of the Fe concentration by the SPV method can also estimate the carrier life time variation that is proportional to the carrier diffusion length in principle (Analysis Handbook for ULSI Manufacturing, p. 386- 1991, 1991, "SPV method").
  • the present inventors have conceived of covering a rectifying cylinder arranged around a silicon single crystal grown at the time of manufacturing a silicon single crystal with a high-purity film.
  • a rectifying tube does not generate heavy metal impurity vapors including Fe, and therefore, a silicon single crystal of high contamination and uniformity up to the outermost periphery of the wafer. It was thought that training was possible. Therefore, the present inventors conducted the following experiment on the relationship between the effect of providing a film on the surface of the flow control cylinder and the purity of the film.
  • Each single crystal was grown by a crystal pulling device equipped with a rectifying cylinder made of graphite material with a pyrolytic carbon film of different purity formed on the surface, and each wafer was manufactured from the grown silicon single crystal.
  • the state of Fe contamination was measured by the SPV method.
  • the layer thickness of the pyrolytic carbon film formed on the rectifying cylinder is 40 / m, and the Fe concentration of the film is 0.01, 0.03, 0.05, 0.10, 0.1.
  • Eight types of 5, 0.20, 0.25 and 0.30 ppm were used. Except for using such a covered flow straightening tube, the procedure was the same as in Experiment 1, and the confirmation and evaluation of Fe contamination by the SPV method was also performed in the same manner as in Experiment 1.
  • the Fe concentration of the film was measured by using an ICP (InducuttilyeCoupledP1asma) emission spectrometry.
  • Fig. 1 (A) to (C) With regard to the e-aperator manufactured using a rectifier with a Fe concentration of 0.05 ppm or less from the force, no Fe contamination around the e-aer was observed. Despite the use of a flow straightening tube, no Fe contamination was detected up to the periphery of the wafer, and a high-quality silicon single crystal wafer was obtained. On the other hand, from Figs. 1 (D) to (H), it can be seen from Fig. 1 that, for the e-chamber manufactured using a rectifying cylinder with an Fe concentration of more than 0.05 ppm, the Fe Contamination was scattered.
  • the shape of the rectifying cylinder used in the present invention is not particularly specified.
  • any form can be used as long as it is arranged close to and surrounding the growing crystal.
  • the present invention can be applied to any of them.
  • a carbon material such as a graphite member is used as a general rectifying cylinder, and a distance in a range of 100 mm to 200 mm from the crystal, and a distance of 10 to 100 mm in proximity to the crystal. It is arranged so that it may touch.
  • a high melting point metal such as tungsten or molybdenum can be used.
  • stainless steel or copper can be used as a material for the flow regulating cylinder.
  • the high-purity coating material of the rectifying cylinder is a pyrolytic carbon film as described above or a silicon carbide film.
  • the thickness of the film is preferably 30 ⁇ m or more. This is because if the thickness of the film is less than 10 ⁇ m, the film may be deteriorated by pulling the silicon single crystal several times, and it may not be possible to completely prevent heavy metal contamination. .
  • the film thickness is preferably at most about 200 / m, and it is preferable to select the film thickness of the rectifying cylinder film according to the conditions within this range.
  • a raw material gas such as a mixed gas of C 3 H 8 and H 2 is used for a conventional base material having sufficient heat resistance.
  • a pyrolytic carbon film is formed by CVD (Chemica 1 Vapor Deposition) method.
  • the purity of the film is The concentration should be less than 0.05 ppm.
  • Such a purity can be achieved by increasing the purity of the raw material gas, so that it is easier than increasing the purity of the carbon substrate itself. According to the method of the present invention, since the setting of the purity only needs to be paid when the rectifying tube is manufactured, the cost is not so much higher than the conventional method using the rectifying tube.
  • the film formed on the rectifying cylinder may be silicon carbide.
  • Silicon carbide has the advantage of excellent mechanical strength, heat resistance and corrosion resistance.
  • a silicon wafer was manufactured from a silicon single crystal grown by a crystal pulling device equipped with a rectifying cylinder with a pyrolytic carbon film.
  • the crystal pulling apparatus is the same as the existing crystal pulling apparatus shown in FIG. 4 except that the flow straightening tube used in the pulling method of the present invention is provided.
  • the rectifying cylinder 4 used was a main body made of a graphite material on which a pyrolytic carbon film was formed by a CVD method.
  • the size of the flow straightening cylinder 4 was 25 mm in inner diameter so that the gap between the crystal and the flow straightening cylinder was 25 mm.
  • the layer thickness of the pyrolytic carbon film covering the flow straightening tube was set to 40 m, and the Fe concentration was set to 0.05 ppm or less when forming the film.
  • the purity of the film formed on the rectifier tube was measured by the above-mentioned ICP emission spectrometry, and the result was as shown in Table 1 below. From this, it can be seen that the Fe concentration of the pyrolytic carbon film formed on the surface of the rectifying cylinder of Example 1 is 0.05 ppm or less.
  • Comparative example Pyrolytic carbon 0.009 0.10 0.009 0.444 1.98 0.16 Using the single crystal pulling apparatus described above, 120 kg of polysilicon is charged into a quartz crucible having a diameter of 56 cm to dissolve the polycrystal, and then a seed crystal having a (001) plane is converted into silicon melt. A boron-doped silicon single crystal having a specific resistance of 200 ⁇ ⁇ cm and a diameter of 200 mm was grown through a immersion process and a drawing process. Silicon single crystal wafers were produced through various processes necessary for industrial production of ordinary silicon wafers, such as cylindrical polishing, slicing, lapping, and polishing of the grown silicon single crystals.
  • the Fe contamination of the manufactured silicon single crystal wafer was evaluated by the SPV method described above. The results are shown in FIG. 1 (B). From Fig. 1 (B), no Fe contamination around the wafer was observed, and it was found that the Fe concentration from the center to the outer edge of the wafer was less than 1 XI 0 10 & toms / cm 3. Was.
  • the Fe concentration by the SPV method was calculated from the diffusion length of minority carriers that is proportional to the carrier lifetime. From Fig. 1 (B), the carrier lifetime can be sufficiently (maximum, minimum). Value) It was found that the Z maximum value was 50% or less. Therefore, by using the method of the present invention, a large-diameter high-quality silicon single crystal wafer without Fe contamination can be obtained at a high yield by using a rectifying cylinder.
  • a silicon wafer was manufactured from a silicon single crystal grown by a crystal pulling device equipped with a rectifying cylinder formed with a silicon carbide film.
  • the crystal pulling apparatus was carried out by an existing crystal pulling apparatus shown in FIG. 4 except that a straightening tube used in the pulling method of the present invention was provided.
  • Example 2 a silicon carbide film was formed on the rectifying cylinder 4 whose main body was made of a graphite material by a sputter deposition method.
  • a flow straightening tube having an inner diameter of 250 mm was used so that the gap between the crystal and the flow straightening tube was 25 mm.
  • the layer thickness of the silicon carbide film coated on the rectifying cylinder was set to 70 / xm, and the Fe concentration was set to 0.05 ppm or less when forming the film.
  • Table 1 also shows the results of measuring the purity of the film formed on the rectifying tube 4 by ICP emission analysis in the same manner as in Example 1. From this, this Example 1 It can be seen that the Fe concentration of the silicon carbide film formed on the surface of the rectifying cylinder was 0.05 ppm or less.
  • FIG. 2 shows that no Fe contamination around the wafer was observed as in Example 1, and that a high-quality silicon single crystal wafer with no Fe contamination was obtained up to the periphery of the wafer.
  • the carrier lifetime of the wafer was calculated, and the maximum value (maximum value-minimum value) was calculated to be 50% or less.
  • Example 2 In the same manner as in Example 1, a silicon wafer was produced from a silicon single crystal grown by a crystal pulling apparatus equipped with a rectifying cylinder having a pyrolytic carbon film formed thereon.
  • a pyrolytic carbon film was formed under the condition that the standard for the purity of the pyrolytic carbon film formed in the rectifying cylinder 4 whose main body was made of graphite material was relaxed as compared with the example 1.
  • the size of the flow straightening tube 4 was a 250 mm inner diameter flow straightening tube such that the gap between the crystal and the flow straightening tube was 25 mm.
  • Table 1 also shows the results of measuring the purity of the film formed on the rectifying cylinder. From this measurement result, it can be seen that the Fe concentration of the film is 0.1 O Op pm. Otherwise, as in Example 1, a silicon single crystal was grown to produce a silicon single crystal wafer.
  • the Fe contamination of the manufactured silicon single crystal wafer was evaluated by the SPV method as in Example 1. The results are shown in FIG. 1 (D). From Fig. 1 (D), it can be seen that forming a film on the flow straightening tube can reduce Fe contamination, but if the purity of the film is insufficient, Fe contamination occurs.
  • the carrier lifetime of Aeha was calculated (maximum value-minimum value), and the maximum value was calculated. The value at this time exceeded 50%. This was due to the fact that Fe contamination reduced the carrier lifetime near the outer periphery of the eha, and exceeded 50% due to variations in the lifetime within the eha plane. Seems to be.
  • the present invention is not limited to this, and a diameter of 8 to 16 inches or It can be applied to even larger silicon single crystals and can work more effectively. Further, it is needless to say that the present invention can also be applied to a so-called MCS method in which a horizontal magnetic field, a vertical magnetic field, a cusp magnetic field, or the like is applied to a silicon melt.

Abstract

L'invention porte sur une tranche de silicium monocristallin présentant une concentration en Fe de 1x1010 atomes/cm3 ou moins, sur une tranche de silicium monocristallin produite par tirage CZ à l'aide d'un tube linéarisateur de flux et présentant une concentration en Fe de 1x1010 atomes/cm3 ou moins, et sur une méthode de tirage CZ utilisée pour obtenir une tranche de silicium monocristallin en faisant croître un cristal de silicium monocristallin placé dans un tube linéarisateur de flux sur lequel se forme une couche présentant une concentration en Fe de 0,05 ppm ou moins. L'invention porte également sur un procédé de production à fort rendement d'un substrat semi-conducteur de circuit intégré dont les caractéristiques ne s'abaissent pas même dans les parties les plus périphériques.
PCT/JP2001/003317 2000-04-25 2001-04-18 Tranche de silicium monocristallin, son procede d'elaboration et procede d'obtention d'une tranche de silicium monocristallin WO2001081661A1 (fr)

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JP2004521056A (ja) * 2000-12-26 2004-07-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 凝集した内因性点欠陥が実質的に存在しない鉄濃度の低い単結晶シリコンの製造方法および製造装置
WO2005019506A1 (fr) * 2003-08-20 2005-03-03 Shin-Etsu Handotai Co., Ltd. Procede de production de monocristal et plaquette de silicium microcristallin
WO2005073439A1 (fr) * 2004-02-02 2005-08-11 Shin-Etsu Handotai Co., Ltd. Monocristaux de silicium, plaque de silicium, appareil de production de ceux-ci et processus de production de ceux-ci
DE102006002682A1 (de) * 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe

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JP2004521056A (ja) * 2000-12-26 2004-07-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 凝集した内因性点欠陥が実質的に存在しない鉄濃度の低い単結晶シリコンの製造方法および製造装置
WO2005019506A1 (fr) * 2003-08-20 2005-03-03 Shin-Etsu Handotai Co., Ltd. Procede de production de monocristal et plaquette de silicium microcristallin
EP1662024A1 (fr) * 2003-08-20 2006-05-31 Shin-Etsu Handotai Co., Ltd Procede de production de monocristal et plaquette de silicium microcristallin
US7326395B2 (en) 2003-08-20 2008-02-05 Shin-Etsu Handotai Co., Ltd. Method for producing a single crystal and silicon single crystal wafer
EP1662024A4 (fr) * 2003-08-20 2008-10-15 Shinetsu Handotai Kk Procede de production de monocristal et plaquette de silicium microcristallin
KR101120615B1 (ko) * 2003-08-20 2012-03-16 신에쯔 한도타이 가부시키가이샤 단결정의 제조방법 및 실리콘 단결정 웨이퍼
WO2005073439A1 (fr) * 2004-02-02 2005-08-11 Shin-Etsu Handotai Co., Ltd. Monocristaux de silicium, plaque de silicium, appareil de production de ceux-ci et processus de production de ceux-ci
JP2008247737A (ja) * 2004-02-02 2008-10-16 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置及び製造方法並びにシリコンウェーハ
JP4650520B2 (ja) * 2004-02-02 2011-03-16 信越半導体株式会社 シリコン単結晶の製造装置及び製造方法
DE102006002682A1 (de) * 2006-01-19 2007-08-02 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe
CN100572614C (zh) * 2006-01-19 2009-12-23 硅电子股份公司 用于制造单晶的设备和方法

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