WO1998021747A1 - Procede de formage d'un film au plasma et dispositif de fabrication d'un film au plasma - Google Patents
Procede de formage d'un film au plasma et dispositif de fabrication d'un film au plasma Download PDFInfo
- Publication number
- WO1998021747A1 WO1998021747A1 PCT/JP1997/004098 JP9704098W WO9821747A1 WO 1998021747 A1 WO1998021747 A1 WO 1998021747A1 JP 9704098 W JP9704098 W JP 9704098W WO 9821747 A1 WO9821747 A1 WO 9821747A1
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- WIPO (PCT)
- Prior art keywords
- plasma
- gas
- film
- fluorine
- carbon
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 53
- 239000007789 gas Substances 0.000 claims abstract description 238
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 46
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 34
- 239000011737 fluorine Substances 0.000 claims abstract description 30
- 150000001875 compounds Chemical class 0.000 claims abstract description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 6
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 6
- 238000009832 plasma treatment Methods 0.000 claims abstract description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 15
- 239000010408 film Substances 0.000 claims description 194
- 238000012545 processing Methods 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 21
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 238000004949 mass spectrometry Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 241000255925 Diptera Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 241000237503 Pectinidae Species 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 235000020637 scallop Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 210000000689 upper leg Anatomy 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
Definitions
- the present invention relates to a method and an apparatus for performing a plasma treatment on a fluorine-added carbon film that can be used for an interlayer insulating film of a semiconductor device, for example.
- a conductive connection is made between the n-th layer and the (n + 1) -th layer, and a thin film called an interlayer insulating film is formed in a region other than the conductive layer.
- this interlayer Ife film is a SiO 2 film, but in recent years, it has been required to lower the relative dielectric constant of the interlayer insulating film in order to further increase the speed of device operation. Studies have been made on the material of the interlayer insulating film. That S i 0 2 is 4 relative dielectric constant of approximately, force excavation of smaller material than this is poured. As one of them, the force of the realization of Si OF having a relative dielectric constant of 3.5 is being pursued. The present inventor pays attention to a fluorine-added carbon film having a smaller relative dielectric constant.
- the interlayer insulating film is strongly required to have not only a small relative dielectric constant but also a large adhesion, a large target, and excellent thermal stability.
- Teflon polytetrafluoroethylene
- ⁇ ⁇
- the present invention is such that in and its purpose was made under the circumstances, c present invention is to provide a method and apparatus for producing a fluorine-containing force one carbon suitable for semiconductor devices is carbon and
- a plasma film forming method comprising: a step of plasma-forming a gas containing a fluorine compound gas and a hydrocarbon gas; and a step of forming an insulating film made of a fluorine-added carbon film on an object to be processed by the plasma.
- the present invention further introduces a microwave of 1 O kw or more per unit volume (1 cubic meter) in a vacuum atmosphere into a plasma chamber of a plasma processing apparatus, applies a magnetic field, and generates plasma ⁇ ffl gas by electron cyclotron resonance.
- the present invention provides a plasma 5 ⁇ M method comprising: a step of forming a plasma; and a step of forming an insulating film made of a fluorine-added carbon film using the plasma-converted fi2 gas.
- the present invention further provides a gas containing a compound gas of carbon, fluorine, and hydrogen, and a gas containing a compound gas of carbon, fluorine, and hydrogen in a vacuum vessel provided with a mounting table for the object to be processed. Applying a bias power of 3.14 W / cm 2 or more per unit area of the mounting surface of the mounting table to draw the ions in the plasma into the object to be processed. It is another object of the present invention to provide a plasma method comprising a step of forming a film comprising a fluorine film on a target object by the plasma.
- the present invention further comprises a step of converting a processing gas containing a compound gas of carbon and fluorine or a compound gas of carbon, fluorine and hydrogen, and an oxygen plasma ⁇ gas into a plasma; A method of forming an insulating film made of an added carbon film.
- the present invention further comprises a step of converting a compound gas of carbon and fluorine or a sulfur-containing gas containing a compound gas of carbon, fluorine and hydrogen into plasma, and forming a fibrous film made of a fluorine-added carbon film on an object to be processed by the plasma; A step of generating oxygen plasma by switching from the film forming gas to oxygen plasma: ⁇ ffl gas and etching a part of the insulating film by using the oxygen plasma; and switching from oxygen plasma to gas as described above to generate plasma. And a step of forming an insulating film made of a fluorine film on the object to be processed by the plasma.
- the present invention further provides a step of applying an AC power to the processing gas to generate a plasma; and turning the AC power on and off by a pulse having a frequency lower than the frequency of the AC power while covering the processing gas with the plasma. And a step of forming a thin film on the processing object.
- the present invention further provides: a plasma chamber for converting a gas for plasma into plasma; a first generator for generating a microphone mouth wave in the plasma chamber; and a generator for forming a magnetic field in the plasma chamber.
- a first supply unit for supplying the plasma ⁇ gas into the plasma chamber; a ⁇ chamber for forming an insulating film on the object to be processed; and a compound gas of carbon and fluorine or carbon, fluorine and hydrogen in the chamber.
- a second supply unit for supplying a gas containing the compound gas of the formula (1) and a hydrocarbon gas, wherein the gas for ⁇ plasma-excited by electron cyclotron resonance using the microwave and the magnetic field.
- a plasma processing apparatus is provided in which a gas is introduced into a chamber, the gas is turned into plasma, and the plasma-formed film forming gas forms an insulating film made of a fluorine-added carbon film.
- FIG. 1 is a vertical sectional side view showing one example of a plasma processing apparatus used for performing a plasma film forming method of the present invention
- Figure 2 is a characteristic diagram showing the relationship between the type of gas and the relative dielectric constant of the CF film;
- Figure 3 is a characteristic diagram showing the type of ⁇ 3 ⁇ 4 ⁇ gas and the adhesion of the CF film;
- Figure 4 is a characteristic diagram showing the relationship between the type of S3 ⁇ 4M gas and the hardness of the CF film
- FIG. 5 is a characteristic diagram showing the result of X-ray photoelectron spectrum of the CF film
- FIG. 6 is a characteristic diagram showing the result of mass spectrometry of gas generated when the value of the CF film is changed;
- FIG. 7 is an explanatory view showing the structure of a film forming gas
- Figure 8 is a characteristic diagram showing the results of mass spectrometry of gas generated when the temperature of the CF film is changed;
- FIG. 9 is an explanatory view showing the reaction of the film forming gas
- Figure 10 is a characteristic diagram showing the results of mass spectrometry of gas generated when 'i ⁇ is changed for the CF film;
- Figure 11 is a characteristic diagram showing the results of mass spectrometry of gas generated when-is changed for a CF film
- Figure 12 is a characteristic diagram showing the relationship between bias power and speed for each process pressure
- FIG. 13 is an explanatory diagram showing the relationship between the process pressure and the stress of the CF film
- FIG. 14 is an explanatory diagram showing the state of the stress of the CF film
- FIG. 15 is an explanatory diagram showing the dependence of the microphone mouth wave power on the adhesion of the CF film.
- FIG. 16 is an explanatory diagram showing the dependence of the microphone mouth wave power on the film thickness uniformity of the CF film;
- FIG. 17 is an explanatory diagram showing the dependence of the bias power on the adhesion of the CF film
- FIG. 18 is an explanatory diagram showing the dependence of the bias power on the film thickness uniformity of the CF film
- FIG. 19 is an illustration showing the relationship between the bias power and the aspect ratio of the buried recess;
- FIG. 20 is an explanatory view showing a state of burying between wirings by a CF film;
- FIG. 21 is an explanatory view showing a state of burying between wirings by a CF film;
- FIG. 22 is another embodiment of the present invention
- FIG. 2 is an explanatory view showing a schematic configuration of a plasma processing apparatus used for the apparatus;
- Figure 23 is a waveform diagram showing how the microwave power supply and bias power supply are turned on and off;
- Figure 24 is a characteristic diagram showing the relationship between microwave power, plasma density, and electrons
- Figure 25 is a characteristic diagram showing the relationship between microwave power, plasma density, and electron- ⁇ .
- FIG. 26 is a characteristic diagram showing a relationship between the duty ratio and the ⁇ 3 ⁇ 4 speed when the microwave power and the bias power are turned on and off.
- Embodiments of the present invention are based on, for example, the process conditions for producing fluorinated carbon (hereinafter referred to as “CF film”) suitable for an interlayer insulating film of a semiconductor device, such as the type and pressure of a source gas and the film quality of the CF film. It is characterized by examining the relationship between and finding the optimal (process conditions).
- CF film fluorinated carbon
- FIG. 1 an example of a plasma processing apparatus used in this embodiment is shown in FIG.
- the plasma processing apparatus 1 has a vacuum vessel 2 formed of, for example, aluminum or the like.
- the vacuum vessel 2 is located above and has a cylindrical plasma chamber 21 for generating plasma.
- the plasma chamber 21 has a cylindrical film forming chamber 22 having a larger diameter than the plasma chamber 21.
- the vacuum vessel 2 is grounded and has a zero potential.
- a transparent window 23 made of a material such as quartz is provided in this portion in an airtight manner. Is to be maintained. Outside of this transmission window 23, for example, A waveguide 25 connected to a high-frequency power supply 24 as a high-frequency supply means for generating 2.4-GHz plasma is provided, and the microphone mouth wave M generated in the high-frequency power supply 24 is conducted. It can be guided by the wave tube 25 and introduced into the plasma chamber 21 from the transmission window 23.
- a plasma gas nozzle 26 is provided on the side wall that partitions the plasma chamber 21 evenly along the circumferential direction.
- the nozzle 26 has a plasma gas source (not shown) such as Ar gas or O 2 gas. gas source is connected, and by the upper portion of the plasma chamber 2 within 1 may uniformly supplied evenly plasma gas such as a r gas and O n gas UniNatsu. Although only two nozzles 26 are shown in the figure to avoid complexity, more nozzles 26 are actually provided.
- a ring-shaped main electromagnetic coil 27 is disposed as a magnetic field forming means close to the outer periphery of the side wall that partitions the plasma chamber 21, and a ring-shaped lower part of the chamber 22 is provided below the chamber 22.
- An auxiliary electromagnetic coil 28 is arranged to form a magnetic field from top to bottom from the plasma chamber 21 to the film formation chamber 22, for example, a magnetic field B of 875 gauss. I am satisfied. Note that a permanent magnet may be used instead of the electromagnetic coil.
- this apparatus constitutes an electron cyclotron resonance (ECR) plasma processing apparatus.
- a ring-shaped gas supply unit 30 is provided in the upper part of the M chamber 22, that is, in the part communicating with the plasma chamber 21, so that gas can be ejected from the inner peripheral surface.
- a mounting table 3 is provided so as to be able to move up and down.
- the mounting table 3 has a built-in heater, for example, on a main body 31 made of aluminum.
- An electric chuck 32 is provided.
- a high-frequency power supply unit 34 is connected to the electrode 33 of the electrostatic chuck 32 so as to apply a bias voltage for drawing an ion into the wafer W.
- the exhaust pipe 35 is strongly connected to the bottom of the ⁇ ⁇ chamber 22.
- a method for forming an interlayer insulating film made of a CF film on the wafer 10 as a processing object using the above-described apparatus will be described.
- a gate valve (not shown) provided on the side wall of the vacuum vessel 2 is opened, and a transfer arm (not shown) loads a wafer 10, for example, an object to be processed having aluminum I ⁇ formed on its surface, into a load (not shown). It is carried in from the lock room and placed on the mounting table 3.
- the internal atmosphere is exhausted from the exhaust pipe 35 and evacuated to a predetermined level, and plasma is generated from the plasma gas nozzle 26 into the plasma chamber 21.
- a gas such as Ar gas is introduced, and a film forming gas such as CF 4 gas and C 2 H 4 gas are introduced from the gas supply unit 30 into the film forming chamber 22 at flow rates of 60 sccm and 30 sccm, respectively. .
- the inside of the vacuum vessel 2 is maintained at a process pressure of, for example, 0.1 Pa, and a bias ⁇ E of 13.56 MHz and 150 W is applied to the mounting table 3 by the high-frequency power supply section 34, and The surface- ⁇ of the mounting table 3 is set to 320 ° C.
- the high-frequency (microwave) of 2.45 GHz from the high-frequency power supply 24 for plasma generation is transported through the waveguide 25 and reaches the ceiling of the vacuum vessel 2, where it passes through the transmission window 23.
- the microwave M is introduced into the plasma chamber 21.
- a magnetic field B generated by the electromagnetic coils 27 and 28 is applied with a strength of, for example, 875 gauss from the upper side to the lower side.
- Electron cyclotron resonance is generated by the interaction of E (electric field) and XB (magnetic field), and this resonance turns the Ar gas into a plasma and densifies it. Stabilizes.
- the plasma flow from the plasma chamber 21 into the S 2M chamber 22 is supplied here.
- the activated C 4 Fg gas and C 2 H 4 gas are activated to form active species.
- plasma ions in this example, Ar ions are drawn into the wafer 10 by the plasma pulling bias ⁇ E, and the corners of the CF film deposited on the pattern (recess) on the surface of the wafer 10 are sputter-etched by the Ar ions. The CF film is removed and buried in the recesses while shaving and widening the frontage.
- n, m, k, or s are integers.
- C n F- a 'between the gas and the C K H s gas was respectively 60 sc cm and 30 sc cm, other process conditions and the thickness were the same as the form of the above H3 ⁇ 4 of 1; the CF film
- the CF film thus obtained was examined for specific dielectric constant, adhesion and hardness.
- C n F—Gas include CF A , C 2 Fe and C 3 F. , C 4 F. And the like can be used, also C K
- the H s gas can be used as H 2, CH 4, C 2 H o C 2 H 6, C 3 Hg, C 4 Hg.
- Figures 2-4 respectively dielectric constant shows the results for tight adhesion beauty hardness, the horizontal axis represents the ratio of C n F ffl gas m and n, and s of the C K Hg gas on the vertical axis The ratio with K is taken.
- the numerical value described at the intersection of the vertical and horizontal axes is the data.
- the relative dielectric constant of the combination of F 8 gas and C 2 H 4 gas is 2.2.
- data 3 ⁇ 4 ⁇ stage are those with H Q gas as C K H s gas.
- a CF film is formed on the bare silicon surface, aluminum is further formed thereon, and a dielectric constant meter is connected between the silicon layer and the electrode. The relative dielectric constant of the CF film was measured.
- adhesion a CF film is formed on the surface of bare silicon, an adhesion tester is fixed on the surface of this CF film with an adhesive, and the test sample is lifted up by one bow to remove the CF film from bare silicon.
- Specimen unit ® Bow I The lifting force (kg gcm 2 ) was used as an index (Sebastian method).
- Measurements were conducted using a Shimadzu Dynamic Ultra-Micro Hardness Tester DUH-200, with a test load of 500 mg f and a load speed of 29 mg f / sec using a triangular pyramid indenter with a ridge spacing of 115 degrees and an indenter tip curvature radius of 0.1 m or less.
- An indentation test was performed on the CF film under the conditions of a time of 5 sec. When the indentation depth to D ( ⁇ m), was used as an index of factor (3 7. 838) X load / D 2 a hardness (dynamic hardness).
- the relative dielectric constant In order to cope with high-speed device shading, the relative dielectric constant must be 3.0 or less, preferably 2.5 or less, and the range of gas combinations satisfying this range is indicated by oblique lines in FIG. .
- the adhesion in the case of the above-mentioned test, if it is 20 O kg / cm 2 or more, there is no danger of film peeling when incorporated into the device, and this range is shown by hatching in FIG. If the hardness is too low, for example, it becomes difficult to perform an etch-back process for polishing and flattening the surface, it is necessary to set the hardness to 40 or more, preferably 50 or more. Indicated by Considering these results, the relative dielectric constant can be reduced by increasing the ratio of F in the film.
- the CF film ⁇ - ⁇ with the combination of F 8 gas and C 2 H 2 has a specific dielectric constant of 2.4, an adhesion of 412, and a 3 ⁇ 4 of 192, and is preferred as an interlayer insulating film. I understand strongly that it is a good thing. Note in the above example may be added of H2 gas in addition to the C n F ffl gas and C k H s gas.
- a double or triple bond gas such as a C 2 F 2 gas or a C 2 gas is used as a CF-based gas as a source gas.
- the CF film has an effect of having excellent thermal stability. Thermal stability means that less F (fluorine) escapes even at high temperatures. That is, in order to electrically connect the upper and lower wiring layers, for example, aluminum wiring, to each other, a via hole is formed after the interlayer insulating film is formed by ⁇ 3 ⁇ 4, and for example, W (tungsten) burying force is performed. This embedding process is performed, for example, at about 450 ° C.
- aluminum may be poured into via holes, and this reflow process is performed at about 400 ° C or higher.
- the force that pulls out the F force Compared to F, the power is less.
- Aluminum can corrode in the presence of C1 and F, which are used during wiring etching. Therefore, it is desirable that the thermal stability is large.
- the other process conditions were the same as in the previous embodiment, and a 1 ⁇ m-thick CF film was used.This is referred to as “m Example 11.”
- the C 4 Fg gas and the C 9 H 4 gas were 70 sccm and The CF film was ⁇ -coated in the same manner as in Example 11 except that the film was supplied at ⁇ 40 sccm.
- Example 11 had a stronger release of F, CF, CF 0 , and CF 3 and a higher thermal stability.
- the force of F ⁇ less is that the C-C bond is formed in a three-dimensional network, that is, a C-C network structure is formed, and even if the C-F bond dissociates, F It is presumed that it is hard to fall out.
- a double bond or a 3F-based C-F-based gas is used, a network structure is formed by the polymerization reaction of the raw material gas itself, and the dissociation of C-F bond F is not required. Therefore, it is thought that the number of C—C bonds with C-F bonds increased.
- the force that can increase the number of CC bonds by increasing the ratio of C 2 gas ⁇ In this case, the ratio of F decreases and the relative dielectric constant increases. .
- a CF-based gas which is a raw material gas
- a gas having a ⁇ ? Structure in which four CF groups are bonded to one C such as C (CF,) 4 scallops (C 2 F 5 ) May be used in combination with ⁇ 3 ⁇ 4 or the previously described C 4 F 8 gas or C 2 F gas.
- C (CF,) 4 scallops C 2 F 5
- Mosquitoes can be take extent rigid network structure is as shown in the case of cyclic structure diagram 7 (b) as F 8 contrast, C-C bond is the number of F with respect to four Since the number is as small as eight, the relative permittivity becomes high.
- Fig. 7 (C) in the case of a simple linear bond such as C 4 F i 0, when CF bond breaks, C does not always bond, but the force that bonds F It is considered that C—C bonds are difficult to spread in a chain in the three-dimensional direction, and a strong network structure cannot be obtained.
- Example 21 The m21 and the CF film of Comparative Example 21 were measured by a mass spectrometer in the same manner as in Example 11 and the like, and the results shown in FIGS. 8 (a) and 8 (b) were obtained.
- the relative permittivity of Example 21 and Comparative Example 21 was 2.1 and 2.7, respectively. As can be seen from the results,! 1 ⁇ 2Example 21 has a lower relative dielectric constant and higher thermal stability than Comparative Example 21.
- a CHF-based gas as a preferable raw material gas, a CHF-based gas can be exemplified.
- CHF-based gases include CH (CH 2 ) 3 CH 2 F and CH 3 (CH 2 ) 4 CH 2 F, CH 3 (CH 2 ) 7 CH 2 F, CHCH 3 F— 2 , CHF 3 , CHg F, CH 2 F 2 and the like.
- the deposition rate is faster than a mixed gas of CF-based gas and CH-based gas.
- F of C 4 Fg and H of C 2 H 4 are combined to form HF and fly, forming a C—C bonding force. It is thought that the F of one C 4 Fg and the F of the other C 4 F g combine to fly as F 2 to form a C—C bond.
- CHF-based gas it is preferable to use a gas having several powers of F as compared with the number of C, such as CHF 3 gas, in order to keep the relative dielectric constant as low as possible.
- CF-based gas may be added in addition to CHF-based gas and CH-based gas.
- CHF 3 gas and C 2 H 4 gas were supplied at flow rates of 60 sccm and 30 sccm, respectively, and the other process conditions were the same as in Example 11 above.
- Example 31 The measurement of this Example 31 with a mass spectrometer in the same manner as in Example 11 of Example II above gave the results shown in FIG. As can be seen by comparing the results of FIG. 10 with Comparative Example 11 shown in FIG. 6 (b), the use of CHF-based gas is superior in thermal stability. Furthermore, the measurement results of the dynamics of speed and gE3 ⁇ 4 in Hi3 ⁇ 4 Example 31 and Comparative Example 21 are shown below. However, applying a high frequency bias to the wafer If there is no hardness, the hardness is also described for reference.
- FIG. 12 shows the relationship between the bias power applied to the mounting table 3 and the ⁇ 3 ⁇ 4 speed for each pressure.
- the microwave power was 2.7 kw
- the flow rates of C 4 F 8 gas, C 2 H 4 gas and Ar gas were 60 sccm, 30 sccm and 150 sccm, respectively
- the surface of the mounting table ⁇ was set to 200 ° C.
- Other conditions such as the magnetic field are the same as the conditions described in the above embodiment.
- the bias power increases, and the film speed decreases. It is considered that the higher the pressure, the shorter the mean free path of the ions, and the smaller the collision energy between the ions and the molecules. Also, it is considered that when the bias power is increased, the etching effect by ions is increased, and the film forming speed is reduced.
- the inventor of the present invention based on the presumption that if the pressure is reduced, the mean free path of the ion becomes longer, the rate at which active species are incorporated into the film increases, and a dense film can be formed. In this example, the adhesion to the silicon substrate was examined in terms of film stress.
- Figure 13 shows that the bias power was 0 W under the process conditions when the data in Figure 12 was taken, and the magnitude of the stress and the presence or absence of film peeling were examined for the CF film obtained on the silicon-based fe: The result. However, the case where the pressure was set to 1.2 Pa and 1.5 Pa and the process was performed is also shown. The stress was calculated as follows:
- IJs Compression and tension in stress are the IJs that indicate the force applied to the silicon substrate when viewed from the CF film. Such stress is applied when the wafer returns to room temperature. This is because there is a difference in ⁇ . Then, as shown in Fig. 14, when the CF film is going to be dense, the C film is trying to spread itself because the C gradually enters into the film later, and the silicon substrate tries to suppress the elongation. Therefore, the CF film is compressed from the silicon substrate.
- the CF film is not dense enough, it will try to shrink strongly.
- the film tends to peel off.
- the method of examining the presence or absence of film peeling was performed by attaching an adhesive tape to the surface of the CF film and checking whether or not the CF film peeled from the silicon substrate when peeling this tape.
- the pressure is 1 Pa or less in order to prevent film peeling.
- the bias power is required to be at least 500 W ⁇ ⁇ g in order to secure the etching characteristics of the shoulder portion of the concave portion due to the ions and to perform good filling, but at this time, the male speed is set to 400 ⁇ Zm.
- the pressure is preferably 1 Pa or less from the graph of FIG. The magnitude of this speed was calculated by back-calculating the processing of 10 to 11 sheets per hour, taking into account the cleaning process when performing a 1 m CF film. is there.
- the bias power was set to 150 W under the process conditions when the data in Fig. 12 was taken, and the aspect ratio (depth Z width of the concave portion) that could be embedded at 0.2 Pa and 1 Pa, respectively, was examined. However, they were 2 and 0.8, respectively. Therefore, it can be said that the lower the pressure, the better the embedding characteristics. Furthermore, the lower the pressure, the greater the collision energy of the and the ions, the greater the energy of the active species, the greater the number of C-C bonds, and the more the F in the film is knocked out, the greater the number of C-C bonds and the greater the heat. It is presumed that the target stability will increase.
- the microwave power was increased to 100 W, 150 W 0 W 200 W 0 250 W 0 250 W 0 0 W, 3 0 0 0 W ⁇ 3 5 0 0 W, each set to thickness 1 0 0 0 0
- Process conditions other than microwave power were the same, and C 4 Fg gas, C 2 H 4 gas, and Ar gas were supplied by 6 Osccm, 30 sccm, and 150 sccm thighs, respectively.
- the surface temperature of the mounting table was set to 320 ° C
- the bias power of the mounting table 3 was set to 1500 W.
- Other conditions are the same as those of the embodiment.
- the adhesion to the utility for incorporation into the device as gKB is 200 kg / cm 2 or more Since the power is preferable, the microwave power must be 1000 W or more in terms of adhesion.
- the in-plane film thickness uniformity " ⁇ " of the obtained CF film was examined for each microphone mouth wave power, the result shown in Fig. 16 was obtained. In practice, the film thickness uniformity is preferably 20% or less. Therefore, when combined with the adhesion data, it is desirable that the microwave power be at least 2000 W.
- the volume in the vacuum vessel 2 is 0.2 ⁇ ⁇ , it is necessary per unit volume of the vacuum vessel 2.
- the microwave power is more than 1000 OWZm 3.
- the hardness of the CF film formed under the condition that the microwave power is 2000 W or more was sufficiently obtained when the hardness was examined. It is presumed that the larger the value is, the better the adhesion is because the energy of the active species in the film-forming gas is large and the number of C-C bonds is increased. This is probably because the uniformity of the density is improved.
- the microwave power was set to 2700 W, and the dependence of the bias power on the adhesion of the CF film and the uniformity of the in-plane film thickness was investigated by changing the bias power of the mounting table.
- Figure 17 and Figure 18 The result was strong.
- Other process conditions are the same as those when the data shown in Fig. 15 were measured. From this result, it is preferable that the magnitude of the bias power be 1000 W or more.
- ®3 ⁇ 4 on the upper surface of the mounting table 3 is 3. Since 1 is 4 x 1 0- 2 m 2, preferably the power per unit area 3. is 1 4W / m 2 or more.
- the relative dielectric constant of the CF film under these conditions was 3.0 or less, which was sufficiently low.
- Fig. 19 shows the dependence of the bias power on the embedding characteristics.
- the process conditions are the same as when the data in Figs. 17 and 18 were taken.
- the center in Fig. 19 indicates that the embedding was successfully performed, and the X mark indicates that void mosquitoes were generated.
- the width between the aluminum used for embedding is 0. From this result, it can be understood that the embedding characteristics are improved when the bias power is increased. The reason is considered to be that the sputter etching effect on the shoulder of the concave portion due to the ion is increased.
- the Hii they are intended to'll improve the filling characteristics by adding ⁇ 2 gas to the raw material gas.
- CF film is gradually removed by a C 0 2 undergoes 0 9 chemical reaction (going chemically etched) particular interest, the gas supply unit 3 shown in FIG. 1 0 thought to improve the embedding in high ⁇ scan Bae transfected ratio by supplying Omicron eta gas in addition to the film forming gas, for example C 4 F g gas and C 2 eta gas.
- 2 0 is a diagram showing a »to embed between the aluminum wiring in the case of adding 0 2 gas continuously. 0 9 since the gas is considered to be active I arsenide reacts with C in the CF film C 0 2 next CF film I ⁇ etched, the etching and deposition proceed simultaneously.
- the o 2 gas supplied from the film forming gas supply unit is activated by the energy of the plasma and further by electron cyclotron resonance to become ions. Impact on the wafer with high perpendicularity by the bias power. As a result, as shown in FIG. 20, the etching speed is particularly large at the shoulder (the frontage portion), and the embedding force is performed while sufficiently widening the frontage. be able to. On the other hand, since the etching rate is low in the sputter etching using only Ar ions, when burying a concave portion having a large aspect ratio, the etching of the frontage cannot catch up with the burying, and a void is easily formed. .
- 0 2 confirm the effect of the gases, in order to, using the apparatus shown in FIG. 1, C 4 F 8 gas, C 2 Eta ,, gas and 0.
- the concave part where the distance between the aluminum wiring is 0.2 / m when the gas is supplied from the film forming gas supply unit at 60 sccm, 30 sccm, and 20 sccm, respectively, and when the 02 gas is not added. was subjected to the embedding test, 0 2 is the aspect ratio in the case of not adding gas was observed the occurrence of voids exceeds 4, 0 2 aspect ratio in the case of addition of gas is 5 met However, no voids were generated and good embedding was achieved.
- the microwave power was set to 270 W
- the bias power of the mounting table was set to 150 W
- the pressure was set to 0.2 Pa
- the surface temperature of the mounting table was set to 350 ° C.
- Other conditions are the same as those of the form of gfc ⁇ .
- FIG. 21 is a view showing a state in which the process force is performed by such a method
- FIG. 21 (a) shows a state in which, for example, an aluminum hidden four force is formed on a phosphorus- and boron-doped SiO 2 film.
- FIG. 21 (b) shows a state in which, for example, an aluminum hidden four force is formed on a phosphorus- and boron-doped SiO 2 film.
- timing of switching the 0 2 gas from ⁇ 3 ⁇ 4 gas is not limited to this example, for example, it may be at when about to blocked frontage force as shown in FIG. 20 above reporting, or any other evening timing.
- the switching between the deposition gas and 0 2 gas may be performed twice or more in one step is not limited to one as described above. Further, when supplying the second gas, the gas may be supplied at the same time.
- F 8 gas and CH 4 gas were supplied at 60 sccm and 30 sc 111 respectively for 60 seconds, and then O 2 gas After switching to 50 sccm and etching for 60 seconds, and then switching to C 4 F ⁇ ⁇ gas and C 2 H 4 gas for film deposition for 120 seconds, the distance between E ⁇ 0.2 m Good embedding was achieved in the recesses between the aluminum layers, which were 4 in each case.
- the microwave power was set to 2700 W
- the bias power of the mounting table was set to 1500 W
- the pressure was set to 0.2 Pa
- the surface temperature of the mounting table was set to 350 ° C.
- the other conditions are the same as those of the form of K3 ⁇ 4.
- This form of ⁇ is a method in which electrical energy for generating plasma is applied in a pulse shape with a certain duty ratio.
- the configuration of the device uses a pulse microwave power source 51 as a microwave oscillating unit and a pulse high frequency power source 52 as a bias power source for the mounting table 3 as shown in FIG.
- a synchronization circuit 53 for synchronizing the power supplies 51 and 52 is provided.
- the pulsed microwave power supply 51 is provided with a high-frequency power supply that outputs, for example, a microwave of 2.45 GHz, and turns on the microwaves from here by a pulse of, for example, 10 Hz to 10 KHz output from the synchronization circuit 53.
- the pulse high-frequency power supply 52 is provided with a high-frequency power supply that outputs a high frequency of, for example, 13.56 MHz.
- Fig. 23 shows an example of the power waveforms of the power supplies 51 and 52. The force schematically shows the pulse waveform in the figure, and when this pulse is on, a power waveform of 2.45 GHz (or 13.56 MHz) is included.
- the pulse oscillation repeats on and off, so each time it is turned on, the initial transient phenomenon of the above-mentioned continuous vibration occurs, and therefore the electron rapidly rises and is maintained continuously. become.
- the pulse oscillation causes electrons to rise strongly and become 3 ⁇ 4 at the time, especially high-energy radicals.
- the number of dikar's force is increased. As a result, the speed is increased and the film becomes dense because it is pushed deep into the radical force film.
- the speed will decrease. This is due to the high plasma power of the electron ' ⁇ at the same time as the application of the pulse power; however, the pulse power is turned off before the avalanche force is sufficiently generated, and as a result, the generation of active species contributing to It is thought that this was due to the decrease. Therefore, it is important to improve the deposition rate by optimizing the duty ratio.
- the bias power may be applied by applying a high frequency as in the past, or when ⁇ 3 ⁇ 4 of a film other than the CF film, for example, a SiO film is performed. May be applied.
- the present invention may be applied to a plasma processing apparatus other than the ECR plasma processing apparatus.
- a CF film having good film quality suitable for an interlayer insulating film can be formed, and a high speed can be obtained.
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JP4413556B2 (ja) | 2003-08-15 | 2010-02-10 | 東京エレクトロン株式会社 | 成膜方法、半導体装置の製造方法 |
US7056830B2 (en) * | 2003-09-03 | 2006-06-06 | Applied Materials, Inc. | Method for plasma etching a dielectric layer |
AU2005200629A1 (en) * | 2004-02-12 | 2005-09-01 | The Thailand Research Fund | High current density ion source |
CA2497324A1 (en) | 2004-02-17 | 2005-08-17 | Affymetrix, Inc. | Methods for fragmenting and labelling dna |
US7384693B2 (en) * | 2004-04-28 | 2008-06-10 | Intel Corporation | Diamond-like carbon films with low dielectric constant and high mechanical strength |
JP4737552B2 (ja) * | 2004-07-22 | 2011-08-03 | 国立大学法人京都大学 | フルオロカーボン膜及びその形成方法 |
EP3211093A1 (en) | 2005-04-14 | 2017-08-30 | The Trustees of Boston University | Diagnostic for lung disorders using class prediction |
JP2009529329A (ja) | 2006-03-09 | 2009-08-20 | トラスティーズ オブ ボストン ユニバーシティ | 鼻腔上皮細胞の遺伝子発現プロファイルを用いた、肺疾患のための診断および予後診断の方法 |
US20090238998A1 (en) * | 2008-03-18 | 2009-09-24 | Applied Materials, Inc. | Coaxial microwave assisted deposition and etch systems |
CN102803552B (zh) * | 2009-06-26 | 2015-06-24 | 东京毅力科创株式会社 | 等离子体处理方法 |
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JP6315809B2 (ja) | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
DE102015100686A1 (de) * | 2015-01-19 | 2016-07-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von Halbleiterchips und Halbleiterchip |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
JP6583081B2 (ja) | 2016-03-22 | 2019-10-02 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06216047A (ja) * | 1993-01-12 | 1994-08-05 | Anelva Corp | マイクロ波プラズマcvd膜形成方法および装置 |
JPH07278822A (ja) * | 1994-02-21 | 1995-10-24 | Nissin Electric Co Ltd | 炭素膜形成のためのプラズマcvd法及び装置 |
JPH0883842A (ja) * | 1994-09-12 | 1996-03-26 | Nec Corp | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697660B2 (ja) | 1985-03-23 | 1994-11-30 | 日本電信電話株式会社 | 薄膜形成方法 |
JPS6243335A (ja) | 1985-08-21 | 1987-02-25 | Arita Seisakusho:Kk | 自動車のドアが開く事を表示する装置 |
JPS63233549A (ja) | 1987-03-20 | 1988-09-29 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成法 |
JPH033380A (ja) | 1989-05-31 | 1991-01-09 | Mitsubishi Electric Corp | 気体レーザ装置 |
JPH04271122A (ja) | 1991-02-27 | 1992-09-28 | Fuji Electric Co Ltd | プラズマ処理装置 |
JPH06196421A (ja) | 1992-12-23 | 1994-07-15 | Sumitomo Metal Ind Ltd | プラズマ装置 |
KR0143873B1 (ko) * | 1993-02-19 | 1998-08-17 | 순페이 야마자끼 | 절연막 및 반도체장치 및 반도체 장치 제조방법 |
US5571576A (en) * | 1995-02-10 | 1996-11-05 | Watkins-Johnson | Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition |
-
1996
- 1996-11-14 JP JP32091196A patent/JP3402972B2/ja not_active Expired - Fee Related
-
1997
- 1997-11-11 US US09/101,516 patent/US6215087B1/en not_active Expired - Fee Related
- 1997-11-11 KR KR1019980705351A patent/KR19990077209A/ko not_active IP Right Cessation
- 1997-11-11 WO PCT/JP1997/004098 patent/WO1998021747A1/ja not_active Application Discontinuation
- 1997-11-13 TW TW086116932A patent/TW368688B/zh not_active IP Right Cessation
-
2001
- 2001-01-02 US US09/750,683 patent/US6355902B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06216047A (ja) * | 1993-01-12 | 1994-08-05 | Anelva Corp | マイクロ波プラズマcvd膜形成方法および装置 |
JPH07278822A (ja) * | 1994-02-21 | 1995-10-24 | Nissin Electric Co Ltd | 炭素膜形成のためのプラズマcvd法及び装置 |
JPH0883842A (ja) * | 1994-09-12 | 1996-03-26 | Nec Corp | 半導体装置 |
Non-Patent Citations (4)
Title |
---|
APPLIED PHYSICS LETTERS, Vol. 68, No. 20, p. 2864-2866. * |
DIAMOND FILMS AND TECHNOLOGY, Vol. 6, No. 1, p. 13-21. * |
THIN FILM HANDBOOK (in Japanese), Edited by NIHON GAKUJUTSU SHINKOKAI USUMAKU DAI 131 IINKAI, OMUSHA, (10 December 1983), p. 229. * |
THIN SOLID FILMS, Vol. 167, p. 255-260. * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1033746A1 (en) * | 1997-11-20 | 2000-09-06 | Tokyo Electron Limited | Method of forming film by plasma |
EP1033746A4 (en) * | 1997-11-20 | 2003-05-28 | Tokyo Electron Ltd | PLASMA DEPOSITION OF A FILM |
WO2001008570A1 (en) * | 1999-07-30 | 2001-02-08 | Drukker International Bv | A cutting blade for a surgical instrument |
Also Published As
Publication number | Publication date |
---|---|
KR19990077209A (ko) | 1999-10-25 |
US6215087B1 (en) | 2001-04-10 |
US20010020608A1 (en) | 2001-09-13 |
JPH10144675A (ja) | 1998-05-29 |
JP3402972B2 (ja) | 2003-05-06 |
TW368688B (en) | 1999-09-01 |
US6355902B2 (en) | 2002-03-12 |
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