US20150270403A1 - Semiconductor device, display device including semiconductor device, display module including display device, and electronic device including semiconductor device, display device, and display module - Google Patents

Semiconductor device, display device including semiconductor device, display module including display device, and electronic device including semiconductor device, display device, and display module Download PDF

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Publication number
US20150270403A1
US20150270403A1 US14/659,792 US201514659792A US2015270403A1 US 20150270403 A1 US20150270403 A1 US 20150270403A1 US 201514659792 A US201514659792 A US 201514659792A US 2015270403 A1 US2015270403 A1 US 2015270403A1
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United States
Prior art keywords
film
insulating film
oxide semiconductor
conductive film
oxide
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US14/659,792
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English (en)
Inventor
Masahiro Katayama
Yasutaka NAKAZAWA
Masatoshi Yokoyama
Masahiko Hayakawa
Kenichi Okazaki
Shunsuke KOSHIOKA
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD. reassignment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KATAYAMA, MASAHIRO, KOSHIOKA, SHUNSUKE, NAKAZAWA, YASUTAKA, OKAZAKI, KENICHI, YOKOYAMA, MASATOSHI
Assigned to SEMICONDUCTOR ENERGY LABORATORY CO., LTD. reassignment SEMICONDUCTOR ENERGY LABORATORY CO., LTD. CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNORS PREVIOUSLY RECORDED ON REEL 035194 FRAME 0899. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNOR, MASAHIKO HAYAKAWA (EXECUTION DATE 2/27/15) OMITTED. Assignors: HAYAKAWA, MASAHIKO, KATAYAMA, MASAHIRO, KOSHIOKA, SHUNSUKE, NAKAZAWA, YASUTAKA, OKAZAKI, KENICHI, YOKOYAMA, MASATOSHI
Publication of US20150270403A1 publication Critical patent/US20150270403A1/en
Priority to US16/110,488 priority Critical patent/US10861980B2/en
Abandoned legal-status Critical Current

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Definitions

  • One embodiment of the present invention relates to a semiconductor device including an oxide semiconductor and a display device including the semiconductor device.
  • one embodiment of the present invention is not limited to the above technical field.
  • the technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
  • the present invention relates to a process, a machine, manufacture, or a composition of matter.
  • the present invention relates to a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, a driving method thereof, or a manufacturing method thereof.
  • a semiconductor device generally means a device that can function by utilizing semiconductor characteristics.
  • a semiconductor element such as a transistor, a semiconductor circuit, an arithmetic device, and a memory device are each an embodiment of a semiconductor device.
  • An imaging device, a display device, a liquid crystal display device, a light-emitting device, an electro-optical device, a power generation device (including a thin film solar cell, an organic thin film solar cell, and the like), and an electronic device may each include a semiconductor device.
  • FET field-effect transistor
  • TFT thin film transistor
  • Such transistors are applied to a wide range of electronic devices such as an integrated circuit (IC) and an image display device (display device).
  • a semiconductor material typified by silicon is widely known as a material for a semiconductor thin film that can be used for a transistor.
  • an oxide semiconductor has been attracting attention (see Patent Document 1).
  • a transistor including an oxide semiconductor film a transistor is disclosed in which the numbers of hydrogen molecules and ammonia molecules which are released from a nitride insulating film provided over the transistor are reduced and a change in electrical characteristics is suppressed (see Patent Document 2).
  • a multi-layer structure is preferred to a single-layer structure because the wirings can be integrated with high density.
  • a wiring having a multi-layer structure it is preferable to use a conductive film which is formed through steps of processing the same conductive film as conductive films used for a gate electrode, a source electrode, or a drain electrode of the transistor or a pixel electrode electrically connected to the transistor, in which case the manufacturing cost can be reduced because the number of steps (the number of masks) can be reduced.
  • the wirings can be integrated with high density.
  • the transparent conductive film might be corroded during operation in a high-temperature and high-humidity environment (e.g., operation at a temperature of 60° C. and a humidity of 95%).
  • a semiconductor device having such a wiring decreases the yield of the display device because of corrosion of the wiring.
  • the transistor when the transistor includes an oxide semiconductor film in a semiconductor layer and a protective film is formed over the wiring to prevent its corrosion, entry of moisture or the like released from the protective film into the oxide semiconductor film might change electrical characteristics of the transistor.
  • an object of one embodiment of the present invention is to provide a semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover.
  • Another object of one embodiment of the present invention is to provide a semiconductor device with high productivity. Another object of one embodiment of the present invention is to provide a semiconductor device that is suitable for miniaturization. Another object of one embodiment of the present invention is to provide a semiconductor device including an oxide semiconductor with favorable electrical characteristics. Another object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor in which a change in the electrical characteristics is suppressed. Another object of one embodiment of the present invention is to provide a novel semiconductor device. Another object of one embodiment of the present invention is to provide a novel display device.
  • One embodiment of the present invention is a semiconductor device including a first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film.
  • the third conductive film includes indium and oxygen
  • the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1 ⁇ 10 15 molecules/cm 3 by thermal desorption spectroscopy.
  • Another embodiment of the present invention is a semiconductor device including a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film over the first insulating film, a pair of second conductive films electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film and the pair of second conductive films, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film.
  • the third conductive film includes indium and oxygen
  • the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1 ⁇ 10 15 molecules/cm 3 by thermal desorption spectroscopy.
  • the third conductive film further include tin and silicon.
  • the oxide semiconductor film include oxygen, In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf), and it is preferable that the oxide semiconductor film include a crystal part and that the crystal part have c-axis alignment.
  • Another embodiment of the present invention is a display device including the semiconductor device according to any one of the above embodiments, and a display element.
  • Another embodiment of the present invention is a display module including the display device and a touch sensor.
  • Another embodiment of the present invention is an electronic device including the semiconductor device according to any one of the above embodiments, the display device, or the display module; and at least one of an operation key and a battery.
  • a semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover, or a semiconductor device having excellent productivity can be provided.
  • a semiconductor device that is suitable for miniaturization can be provided.
  • a semiconductor device including an oxide semiconductor can be provided with favorable electrical characteristics.
  • a highly reliable semiconductor device including an oxide semiconductor in which a change in the electrical characteristics is suppressed can be provided.
  • a novel semiconductor device can be provided.
  • a novel display device can be provided.
  • FIGS. 1A and 1B are a top view and a cross-sectional view illustrating one embodiment of a semiconductor device.
  • FIGS. 2A and 2B are a top view and a cross-sectional view illustrating one embodiment of a semiconductor device.
  • FIGS. 3A to 3C are a top view and cross-sectional views illustrating one embodiment of a semiconductor device.
  • FIGS. 4A to 4C are a top view and cross-sectional views illustrating one embodiment of a semiconductor device.
  • FIGS. 5A to 5C are a top view and cross-sectional views illustrating one embodiment of a semiconductor device.
  • FIGS. 6A to 6C are a top view and cross-sectional views illustrating one embodiment of a semiconductor device.
  • FIGS. 7A to 7D are cross-sectional views each illustrating one embodiment of a semiconductor device.
  • FIGS. 8A and 8B are band diagrams.
  • FIGS. 9A to 9C are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 10A and 10B are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 11A and 11B are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 12A and 12B are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 13A to 13D are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 14A to 14C are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 15A and 15B are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 16A to 16D are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 17A to 17D are cross-sectional views illustrating an example of a manufacturing process of a semiconductor device.
  • FIGS. 18A to 18D are Cs-corrected high-resolution TEM images of a cross section of a CAAC-OS and a cross-sectional schematic view of a CAAC-OS.
  • FIGS. 19A to 19D are Cs-corrected high-resolution TEM images of a plane of a CAAC-OS.
  • FIGS. 20A to 20C show structural analysis of a CAAC-OS and a single crystal oxide semiconductor by XRD.
  • FIGS. 21A and 21B show electron diffraction patterns of a CAAC-OS.
  • FIG. 22 is a top view illustrating one embodiment of a display device.
  • FIG. 23 is a cross-sectional view illustrating one embodiment of a display device.
  • FIG. 24 is a cross-sectional view illustrating one embodiment of a display device.
  • FIGS. 25A to 25C are a block diagram and circuit diagrams illustrating a display device.
  • FIG. 26 illustrates a display module
  • FIGS. 27A to 27H illustrate electronic devices.
  • FIG. 28 shows temperature dependence of resistivity.
  • FIG. 29 shows the numbers of ammonia molecules released in samples in Example.
  • FIG. 30 is a top view illustrating a sample in Example.
  • FIGS. 31A and 31B show observation results by an optical micrograph in Example.
  • FIGS. 32A and 32B show observation results by an optical micrograph in Example.
  • FIG. 33 shows a change in crystal part of an In—Ga—Zn oxide induced by electron irradiation.
  • a transistor is an element having at least three terminals of a gate, a drain, and a source.
  • the transistor has a channel region between a drain (a drain terminal, a drain region, or a drain electrode) and a source (a source terminal, a source region, or a source electrode), and current can flow through the drain region, the channel region, and the source region.
  • a drain a drain terminal, a drain region, or a drain electrode
  • a source a source terminal, a source region, or a source electrode
  • source and drain functions of a source and a drain might be switched when transistors having different polarities are employed or a direction of current flow is changed in circuit operation, for example. Therefore, the terms “source” and “drain” can be switched in this specification and the like.
  • the expression “electrically connected” includes the case where components are connected through an “object having any electric function”.
  • an “object having any electric function” is no particular limitation on an “object having any electric function” as long as electric signals can be transmitted and received between components that are connected through the object.
  • Examples of an “object having any electric function” are a switching element such as a transistor, a resistor, an inductor, a capacitor, and elements with a variety of functions as well as an electrode and a wiring.
  • a “silicon oxynitride film” refers to a film that includes oxygen at a higher proportion than nitrogen
  • a “silicon nitride oxide film” refers to a film that includes nitrogen at a higher proportion than oxygen.
  • the term “parallel” indicates that the angle formed between two straight lines is greater than or equal to ⁇ 10° and less than or equal to 10°, and accordingly also includes the case where the angle is greater than or equal to ⁇ 5° and less than or equal to 5°.
  • a term “perpendicular” indicates that the angle formed between two straight lines is greater than or equal to 80° and less than or equal to 100°, and accordingly includes the case where the angle is greater than or equal to 85° and less than or equal to 95°.
  • FIG. 1A is a top view of a semiconductor device of one embodiment of the present invention.
  • FIG. 1B is a cross-sectional view taken along a dashed dotted line A 1 -A 2 in FIG. 1A .
  • some components of the semiconductor device e.g., an insulating film
  • FIG. 1A some components are not illustrated in some cases in top views of semiconductor devices described below.
  • the semiconductor device illustrated in FIGS. 1A and 1B includes a conductive film 104 (also referred to as a first conductive film) over a substrate 102 , an insulating film 106 (also referred to as a first insulating film) over the substrate 102 and the conductive film 104 , a conductive film 112 (also referred to as a second conductive film) over the insulating film 106 , insulating films 114 , 116 , and 118 (also collectively referred to as a second insulating film) over the conductive film 112 , a conductive film 120 (also referred to as a third conductive film) electrically connected to the conductive film 104 through an opening 142 provided in the insulating film 106 and the insulating films 114 , 116 , and 118 , and an insulating film 122 (also referred to as a third insulating film) over the conductive film 120 .
  • a conductive film 104 also referred to as
  • the insulating film 106 has a stacked-layer structure of an insulating film 106 a and an insulating film 106 b . Note that the structure of the insulating film 106 is not limited thereto, the insulating film 106 may have a single-layer structure or a stacked-layer structure of three or more layers.
  • the conductive film 104 be formed through steps of processing the same conductive film as a conductive film used for a gate electrode of a transistor. It is preferable that the conductive film 112 be formed through steps of processing the same conductive film as a conductive film used for a source electrode and a drain electrode of the transistor. It is preferable that the conductive film 120 be formed through steps of processing the same conductive film as a conductive film used for a pixel electrode electrically connected to the transistor. The manufacturing cost can be reduced by thus forming the conductive films 104 , 112 , and 120 through steps of processing the same conductive films as the conductive films used for the transistor or the conductive film electrically connected to the transistor.
  • the conductive films 104 , 112 , and 120 can be integrated with high density by being formed through steps of processing the same conductive films as the conductive films used for the transistor or the conductive film electrically connected to the transistor and having a multilayer structure with the insulating films positioned therebetween.
  • the conductive film 120 contains indium and oxygen.
  • the conductive film 120 contains indium, tin, oxygen, and silicon.
  • a material used for the conductive film 120 can be a light-transmitting conductive material such as indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added.
  • the insulating film 122 contains silicon and nitrogen.
  • the number of ammonia molecules released from the insulating film 122 is less than or equal to 1 ⁇ 10 15 molecules/cm 3 when analyzed by thermal desorption spectroscopy (TDS).
  • the insulating film 122 has a function of suppressing entry of moisture from the outside.
  • the insulating film 122 includes a region from which a small number of ammonia molecules are released in the TDS analysis. With such an insulating film 122 , corrosion of the conductive film 120 can be suppressed because entry of moisture from the outside during operation in a high-temperature and high-humidity environment (e.g., operation at a temperature of 60° C. and a humidity of 95%) is suppressed and the amount of moisture or the number of ammonia molecules released from the insulating film 122 is small. Since the insulating film 122 can suppress entry of moisture from the outside, corrosion of the conductive film 104 and the conductive film 112 can also be suppressed. Note that the insulating film 122 may have a single-layer structure or a stacked-layer structure of two or more layers.
  • the substrate 102 there is no particular limitation on the property of a material and the like of the substrate 102 as long as the material has heat resistance enough to withstand at least heat treatment to be performed later.
  • a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, or the like may be used as the substrate 102 .
  • a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon, silicon carbide, or the like, a compound semiconductor substrate made of silicon germanium or the like, an SOI substrate, or the like may be used as the substrate 102 .
  • any of these substrates provided with a semiconductor element may be used as the substrate 102 .
  • a glass substrate having any of the following sizes can be used: the 6th generation (1500 mm ⁇ 1850 mm), the 7th generation (1870 mm ⁇ 2200 mm), the 8th generation (2200 mm ⁇ 2400 mm), the 9th generation (2400 mm ⁇ 2800 mm), and the 10th generation (2950 mm ⁇ 3400 mm)
  • the 6th generation (1500 mm ⁇ 1850 mm
  • the 7th generation (1870 mm ⁇ 2200 mm
  • the 8th generation (2200 mm ⁇ 2400 mm
  • the 9th generation (2400 mm ⁇ 2800 mm the 9th generation
  • 10th generation 2950 mm ⁇ 3400 mm
  • a semiconductor device can be formed using a variety of substrates.
  • the type of a substrate is not limited to a certain type.
  • a semiconductor substrate e.g., a single crystal substrate or a silicon substrate
  • SOI substrate SOI substrate
  • glass substrate glass substrate
  • quartz substrate quartz substrate
  • plastic substrate plastic substrate
  • metal substrate a stainless steel substrate
  • substrate including stainless steel foil a substrate including stainless steel foil
  • tungsten substrate a substrate including tungsten foil
  • a flexible substrate an attachment film, paper including a fibrous material, or a base material film
  • an attachment film paper including a fibrous material, or a base material film
  • a barium borosilicate glass substrate, an aluminoborosilicate glass substrate, or a soda lime glass substrate can be given.
  • a flexible substrate, an attachment film, a base material film, or the like are as follows: plastic typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sulfone (PES); a synthetic resin such as acrylic; polypropylene; polyester; polyvinyl fluoride; polyvinyl chloride; polyamide; polyimide; aramid; epoxy; an inorganic vapor deposition film; and paper.
  • a flexible substrate may be used as the substrate, and the transistor may be provided directly on the flexible substrate.
  • a separation layer may be provided between the substrate and the transistor. The separation layer can be used when part or the whole of a semiconductor device formed over the separation layer is separated from the substrate and transferred onto another substrate. In such a case, the transistor can be transferred to a substrate having low heat resistance or a flexible substrate as well.
  • a stack of inorganic films which are a tungsten film and a silicon oxide film, or an organic resin film of polyimide or the like formed over a substrate can be used, for example.
  • a semiconductor device may be formed using one substrate, and then transferred to another substrate.
  • a substrate to which a semiconductor device is transferred are, in addition to the above substrate over which the semiconductor device can be formed, a paper substrate, a cellophane substrate, an aramid substrate, a polyimide film substrate, a stone substrate, a wood substrate, a cloth substrate (including a natural fiber (e.g., silk, cotton, or hemp), a synthetic fiber (e.g., nylon, polyurethane, or polyester), a regenerated fiber (e.g., acetate, cupra, rayon, or regenerated polyester), and the like), a leather substrate, and a rubber substrate.
  • a semiconductor device with excellent properties or a semiconductor device with low power consumption can be formed, a semiconductor device with high durability, high heat resistance can be provided, or reduction in weight or thickness can be achieved.
  • the conductive film 104 can be formed by a sputtering method or the like using a metal element selected from chromium (Cr), copper (Cu), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), and cobalt (Co); an alloy including any of these metal elements as its component; an alloy including a combination of any of these elements; or the like.
  • a metal element selected from chromium (Cr), copper (Cu), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), and cobalt (Co); an alloy including any of these metal elements as its component; an alloy including a combination of any of these elements;
  • the conductive film 104 may have a single-layer structure or a stacked-layer structure of two or more layers.
  • a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is stacked over an aluminum film, a two-layer structure in which a titanium film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a tantalum nitride film or a tungsten nitride film, and a three-layer structure in which a titanium film, an aluminum film, and a titanium film are stacked in this order can be given.
  • an alloy film or a nitride film in which aluminum and one or more elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may be combined.
  • the conductive film 104 can be formed using a light-transmitting conductive material such as indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added.
  • a light-transmitting conductive material such as indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added.
  • a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be used for the conductive film 104 .
  • Use of an Cu—X alloy film enables the manufacturing cost to be reduced because wet etching process can be used in the processing.
  • an insulating layer including at least one of the following films formed by a plasma enhanced chemical vapor deposition (PECVD) method, a sputtering method, or the like can be used: a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film.
  • PECVD plasma enhanced chemical vapor deposition
  • a silicon nitride film is formed as the insulating film 106 a
  • a silicon oxide film is formed as the insulating film 106 b.
  • the conductive film 112 can be formed using a material and a method which are similar to those of the conductive film 104 .
  • the insulating films 114 , 116 , and 118 collectively function as a protective insulating film.
  • the insulating films 114 and 116 contain oxygen.
  • the insulating film 114 is an insulating film which is permeable to oxygen.
  • a silicon oxide film, a silicon oxynitride film, or the like with a thickness greater than or equal to 5 nm and less than or equal to 150 nm, or preferably greater than or equal to 5 nm and less than or equal to 50 nm can be used as the insulating film 114 .
  • the insulating film 116 is formed using an oxide insulating film that contains oxygen in excess of that in the stoichiometric composition. Part of oxygen is released by heating from the oxide insulating film containing oxygen in excess of that in the stoichiometric composition.
  • the oxide insulating film containing oxygen in excess of that in the stoichiometric composition is an oxide insulating film of which the amount of released oxygen converted into oxygen molecules is greater than or equal to 1.0 ⁇ 10 19 atoms/cm 3 , or preferably greater than or equal to 3.0 ⁇ 10 20 atoms/cm 3 in TDS analysis. Note that the temperature of the film surface in the TDS analysis is preferably higher than or equal to 100° C. and lower than or equal to 700° C., or higher than or equal to 100° C. and lower than or equal to 500° C.
  • the insulating films 114 and 116 can be formed using insulating films formed of the same kinds of materials; thus, a boundary between the insulating films 114 and 116 cannot be clearly observed in some cases. Thus, in this embodiment, the boundary between the insulating films 114 and 116 is shown by a dashed line. Although a two-layer structure of the insulating films 114 and 116 is described in this embodiment, the present invention is not limited to this. For example, a single-layer structure of the insulating film 114 may be used.
  • the insulating film 118 contains nitrogen. Alternatively, the insulating film 118 contains nitrogen and silicon.
  • the insulating film 118 has a function of blocking oxygen, hydrogen, water, an alkali metal, an alkaline earth metal, or the like.
  • a nitride insulating film for example, can be used as the insulating film 118 .
  • the nitride insulating film is formed using silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like.
  • an oxide insulating film having a blocking effect against oxygen, hydrogen, water, and the like may be provided.
  • an aluminum oxide film, an aluminum oxynitride film, a gallium oxide film, a gallium oxynitride film, an yttrium oxide film, an yttrium oxynitride film, a hafnium oxide film, and a hafnium oxynitride film can be given.
  • the conductive film 120 contains indium and oxygen. Alternatively, the conductive film 120 contains indium, tin, and oxygen. Further alternatively, the conductive film 120 contains indium, tin, oxygen, and silicon.
  • the conductive film 120 can be formed using a light-transmitting conductive material such as indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added. Note that the conductive film 120 can be formed by a sputtering method or the like.
  • the insulating film 122 can be formed using the material of the insulating film 122 described above.
  • a silicon nitride film, a silicon nitride oxide film, a silicon oxide film, a silicon oxynitride film, an aluminum nitride film, an aluminum nitride oxide film, an aluminum oxide film, or an aluminum oxynitride film formed with a PECVD apparatus can be used.
  • An ammonia gas is not necessarily used as a deposition gas of the silicon nitride film which is formed with a PECVD apparatus. Without using an ammonia gas as a deposition gas, it is possible to reduce the amount of ammonia entering the film. Therefore, the number of ammonia molecules released from the insulating film 122 can be made small.
  • FIG. 2A is a top view of a semiconductor device of one embodiment of the present invention.
  • FIG. 2B is a cross-sectional view taken along a dashed dotted line A 1 -A 2 in FIG. 2A .
  • the semiconductor device illustrated in FIGS. 2A and 2B includes the conductive film 104 over the substrate 102 , the insulating film 106 over the substrate 102 and the conductive film 104 , the conductive film 112 over the insulating film 106 , the insulating films 114 , 116 , and 118 over the conductive film 112 , the conductive film 120 electrically connected to the conductive film 104 through an opening 143 provided in the insulating films 114 , 116 , and 118 and the opening 142 provided in the insulating film 106 , and the insulating film 122 over the conductive film 120 .
  • the semiconductor device illustrated in FIGS. 2A and 2B is different from the semiconductor device illustrated in FIGS. 1A and 1B in that the opening 143 is provided. As illustrated in FIGS. 2A and 2B , with a structure in which an end portion of the opening 143 provided in the insulating films 114 , 116 , and 118 is provided outside an end portion of the opening 142 provided in the insulating film 106 , coverage of the conductive film 120 and the insulating film 122 can be improved.
  • FIG. 3A is a top view of a transistor 100 that is a semiconductor device of one embodiment of the present invention.
  • FIG. 3B is a cross-sectional view taken along a dashed dotted line X 1 -X 2 in FIG. 3A
  • FIG. 3C is a cross-sectional view taken along a dashed dotted line Y 1 -Y 2 in FIG. 3A .
  • the direction of the dashed dotted line X 1 -X 2 may be called a channel length direction
  • the direction of the dashed dotted line Y 1 -Y 2 may be called a channel width direction.
  • the transistor 100 includes a conductive film 104 a functioning as a gate electrode over the substrate 102 , the insulating film 106 over the substrate 102 and the conductive film 104 a , an oxide semiconductor film 108 over the insulating film 106 , and conductive films 112 a and 112 b functioning as source and drain electrodes electrically connected to the oxide semiconductor film 108 .
  • the insulating films 114 , 116 , and 118 are provided.
  • An opening 142 a reaching the conductive film 112 b is provided in the insulating films 114 , 116 , and 118 , through which a conductive film 120 a electrically connected to the conductive film 112 b is provided.
  • the insulating film 122 is provided over the insulating film 118 and the conductive film 120 a . Note that the insulating film 122 is formed so as to cover the end portion of the conductive film 120 a , and the conductive film 120 a includes a region not covered with the insulating film 122 .
  • the insulating films 114 , 116 , and 118 collectively function as a protective insulating film for the transistor 100 .
  • the insulating film 122 functions as a protective insulating film for the transistor 100 and a protective insulating film for the conductive film 120 a .
  • the conductive film 120 a functions as a pixel electrode used for a display device.
  • the insulating film 106 functions as a gate insulating film of the transistor 100 .
  • oxygen vacancy is formed in the oxide semiconductor film 108 included in the transistor 100 , electrons serving as carriers are generated; as a result, the transistor 100 tends to have normally-on characteristics. Therefore, to obtain stable transistor characteristics, it is important to reduce oxygen vacancy in the oxide semiconductor film 108 .
  • excess oxygen is introduced into an insulating film over the oxide semiconductor film 108 , here, the insulating film 114 over the oxide semiconductor film 108 , whereby oxygen is moved from the insulating film 114 to the oxide semiconductor film 108 to fill oxygen vacancy in the oxide semiconductor film 108 .
  • excess oxygen is introduced into the insulating film 116 over the oxide semiconductor film 108 , whereby oxygen is moved from the insulating film 116 to the oxide semiconductor film 108 through the insulating film 114 to fill oxygen vacancy in the oxide semiconductor film 108 .
  • excess oxygen is introduced into the insulating films 114 and 116 over the oxide semiconductor film 108 , whereby oxygen is moved from both the insulating films 114 and 116 to the oxide semiconductor film 108 to fill oxygen vacancy in the oxide semiconductor film 108 .
  • the insulating films 114 and 116 include oxygen. It is preferable that the insulating films 114 and 116 each include a region (oxygen excess region) containing oxygen in excess of that in the stoichiometric composition. In other words, the insulating films 114 and 116 are each an insulating film capable of releasing oxygen. Note that the oxygen excess region is formed in each of the insulating films 114 and 116 in such a manner that oxygen is introduced into the insulating films 114 and 116 after the deposition, for example. As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, plasma treatment, or the like may be employed.
  • the insulating film 122 functioning as a protective insulating film, which is provided over the transistor 100 includes a region from which a small number of ammonia molecules are released in the TDS analysis described above. Therefore, moisture or ammonia entering the oxide semiconductor film 108 of the transistor 100 can be reduced; thus, an impurity that might be bonded to an oxygen vacancy in the oxide semiconductor film 108 (here, the impurity is hydrogen or ammonia) is reduced. Accordingly, a highly reliable semiconductor device can be provided.
  • the conductive film 104 a functioning as a gate electrode of the transistor 100 can be formed using a material and a method which are similar to those of the conductive film 104 described above.
  • the insulating film 106 functioning as a gate insulating film of the transistor 100 can be formed using a material and a method which are similar to those of the insulating film 106 described above.
  • the insulating film 106 functions as a blocking film which inhibits penetration of oxygen. For example, in the case where excess oxygen is supplied to the insulating film 106 b , the insulating film 114 , the insulating film 116 , and/or the oxide semiconductor film 108 , the insulating film 106 can inhibit penetration of oxygen.
  • the insulating film 106 b that is in contact with the oxide semiconductor film 108 functioning as a channel region of the transistor 100 is preferably an oxide insulating film and further preferably includes a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region).
  • the insulating film 106 b is an insulating film which is capable of releasing oxygen.
  • the oxygen excess region may be formed by introduction of oxygen into the insulating film 106 b after the deposition.
  • a method for introducing oxygen an ion implantation method, an ion doping method, a plasma immersion ion implantation method, plasma treatment, or the like may be employed.
  • hafnium oxide has a higher dielectric constant than silicon oxide and silicon oxynitride. Therefore, a physical thickness can be made larger than an equivalent oxide thickness; thus, even in the case where the equivalent oxide thickness is less than or equal to 10 nm or less than or equal to 5 nm, leakage current due to tunnel current can be low. That is, it is possible to provide a transistor with a low off-state current.
  • hafnium oxide with a crystalline structure has a higher dielectric constant than hafnium oxide with an amorphous structure.
  • hafnium oxide with a crystalline structure in order to provide a transistor with a low off-state current.
  • the crystalline structure include a monoclinic crystal structure and a cubic crystal structure. Note that one embodiment of the present invention is not limited thereto.
  • the silicon nitride film has a higher dielectric constant than a silicon oxide film and needs a larger thickness for capacitance equivalent to that of the silicon oxide film.
  • the physical thickness of the insulating film can be increased. This makes it possible to reduce a decrease in withstand voltage of the transistor 100 and furthermore to increase the withstand voltage, thereby reducing electrostatic discharge damage to the transistor 100 .
  • the oxide semiconductor film 108 contains O, In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). Typically, In—Ga oxide, In—Zn oxide, or In-M-Zn oxide can be used for the oxide semiconductor film 108 . It is particularly preferable to use In-M-Zn oxide for the oxide semiconductor film 108 .
  • the oxide semiconductor film 108 is formed of In-M-Zn oxide
  • the atomic ratio of metal elements of a sputtering target used for forming the In-M-Zn oxide satisfy In ⁇ M and Zn ⁇ M.
  • the atomic ratios of metal elements in the formed oxide semiconductor film 108 vary from the above atomic ratio of metal elements of the sputtering target within a range of ⁇ 40% as an error.
  • the proportion of In and the proportion of M are preferably greater than or equal to 25 atomic % and less than 75 atomic %, respectively, or further preferably greater than or equal to 34 atomic % and less than 66 atomic %, respectively.
  • the energy gap of the oxide semiconductor film 108 is 2 eV or more, preferably 2.5 eV or more, or further preferably 3 eV or more. With the use of an oxide semiconductor having such a wide energy gap, the off-state current of the transistor 100 can be reduced.
  • the thickness of the oxide semiconductor film 108 is greater than or equal to 3 nm and less than or equal to 200 nm, preferably greater than or equal to 3 nm and less than or equal to 100 nm, or further preferably greater than or equal to 3 nm and less than or equal to 50 nm.
  • An oxide semiconductor film with low carrier density is used as the oxide semiconductor film 108 .
  • an oxide semiconductor film whose carrier density is lower than 8 ⁇ 10 11 /cm 3 , preferably lower than 1 ⁇ 10 11 /cm 3 , further preferably lower than 1 ⁇ 10 10 /cm 3 , or still further preferably lower than 1 ⁇ 10 ⁇ 9 /cm 3 is used as the oxide semiconductor film 108 .
  • a material with an appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics (e.g., field-effect mobility and threshold voltage) of a transistor. Furthermore, in order to obtain required semiconductor characteristics of a transistor, it is preferable that the carrier density, the impurity concentration, the defect density, the atomic ratio of a metal element to oxygen, the interatomic distance, the density, and the like of the oxide semiconductor film 108 be set to be appropriate.
  • the oxide semiconductor film 108 an oxide semiconductor film in which the impurity concentration is low and density of defect states is low, in which case the transistor can have more excellent electrical characteristics.
  • the state in which impurity concentration is low and density of defect states is low (the number of oxygen vacancies is small) is referred to as “highly purified intrinsic” or “substantially highly purified intrinsic”.
  • a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has few carrier generation sources, and thus can have a low carrier density.
  • a transistor in which a channel region is formed in the oxide semiconductor film rarely has a negative threshold voltage (is rarely normally on).
  • a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states and accordingly has few carrier traps in some cases. Furthermore, the highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has an extremely low off-state current; even when an element has a channel width of 1 ⁇ 10 6 ⁇ m and a channel length L of 10 ⁇ m, the off-state current can be less than or equal to the measurement limit of a semiconductor parameter analyzer, i.e., less than or equal to 1 ⁇ 10 ⁇ 13 A, at a voltage (drain voltage) between a source electrode and a drain electrode of from 1 V to 10 V.
  • the transistor in which the channel region is formed in the highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film can have a small variation in electrical characteristics and high reliability. Charges trapped by the trap states in the oxide semiconductor film take a long time to be released and may behave like fixed charges. Thus, the transistor whose channel region is formed in the oxide semiconductor film having a high density of trap states has unstable electrical characteristics in some cases.
  • the impurities hydrogen, nitrogen, an alkali metal, an alkaline earth metal, and the like are given.
  • Hydrogen included in the oxide semiconductor film reacts with oxygen bonded to a metal atom to be water, and also causes an oxygen vacancy in a lattice from which oxygen is released (or a portion from which oxygen is released). Due to entry of hydrogen into the oxygen vacancy, an electron serving as a carrier is generated in some cases. Furthermore, in some cases, bonding of part of hydrogen to oxygen bonded to a metal element causes generation of an electron serving as a carrier. Thus, a transistor including an oxide semiconductor film which contains hydrogen is likely to have normally-on characteristics. Accordingly, it is preferable that hydrogen be reduced as much as possible in the oxide semiconductor film 108 .
  • the concentration of hydrogen which is measured by secondary ion mass spectrometry is lower than or equal to 2 ⁇ 10 20 atoms/cm 3 , preferably lower than or equal to 5 ⁇ 10 19 atoms/cm 3 , further preferably lower than or equal to 1 ⁇ 10 19 atoms/cm 3 , further preferably lower than or equal to 5 ⁇ 10 18 atoms/cm 3 , further preferably lower than or equal to 1 ⁇ 10 18 atoms/cm 3 , further preferably lower than or equal to 5 ⁇ 10 17 atoms/cm 3 , or further preferably lower than or equal to 1 ⁇ 10 16 atoms/cm 3 .
  • SIMS secondary ion mass spectrometry
  • the concentration of silicon or carbon (the concentration is measured by SIMS) in the oxide semiconductor film 108 or the concentration of silicon or carbon (the concentration is measured by SIMS) in the vicinity of an interface with the oxide semiconductor film 108 is set to be lower than or equal to 2 ⁇ 10 18 atoms/cm 3 , or preferably lower than or equal to 2 ⁇ 10 17 atoms/cm 3 .
  • the concentration of an alkali metal or an alkaline earth metal of the oxide semiconductor film 108 which is measured by SIMS, is lower than or equal to 1 ⁇ 10 18 atoms/cm 3 , or preferably lower than or equal to 2 ⁇ 10 16 atoms/cm 3 .
  • An alkali metal and an alkaline earth metal might generate carriers when bonded to an oxide semiconductor, in which case the off-state current of the transistor might be increased. Therefore, it is preferable to reduce the concentration of an alkali metal or an alkaline earth metal of the oxide semiconductor film 108 .
  • the oxide semiconductor film 108 when containing nitrogen, the oxide semiconductor film 108 easily becomes n-type by generation of electrons serving as carriers and an increase of carrier density. Thus, a transistor including an oxide semiconductor film which contains nitrogen is likely to have normally-on characteristics. For this reason, nitrogen in the oxide semiconductor film is preferably reduced as much as possible; the concentration of nitrogen which is measured by SIMS is preferably set to be, for example, lower than or equal to 5 ⁇ 10 18 atoms/cm 3 .
  • the oxide semiconductor film 108 may have a non-single-crystal structure, for example.
  • the non-single crystal structure includes a c-axis aligned crystalline oxide semiconductor (CAAC-OS) which is described later, a polycrystalline structure, a microcrystalline structure, or an amorphous structure, for example.
  • CAAC-OS c-axis aligned crystalline oxide semiconductor
  • the amorphous structure has the highest density of defect states, whereas the CAAC-OS has the lowest density of defect states.
  • the oxide semiconductor film 108 may have a non-single-crystal structure, for example.
  • the oxide semiconductor films having the amorphous structure each have disordered atomic arrangement and no crystalline component, for example.
  • the oxide films having an amorphous structure have, for example, an absolutely amorphous structure and no crystal part.
  • the oxide semiconductor film 108 may be a mixed film including two or more of the following: a region having an amorphous structure, a region having a microcrystalline structure, a region having a polycrystalline structure, a CAAC-OS region, and a region having a single-crystal structure.
  • the mixed film has a single-layer structure including, for example, two or more of a region having an amorphous structure, a region having a microcrystalline structure, a region having a polycrystalline structure, a CAAC-OS region, and a region having a single-crystal structure in some cases.
  • the mixed film has a stacked-layer structure of two or more of a region having an amorphous structure, a region having a microcrystalline structure, a region having a polycrystalline structure, a CAAC-OS region, and a region having a single-crystal structure.
  • the insulating films 114 , 116 , and 118 collectively function as a protective insulating film. Note that the insulating film 114 also functions as a film which relieves damage to the oxide semiconductor film 108 at the time of forming the insulating film 116 in a later step.
  • ESR electron spin resonance
  • the insulating film 114 can be formed using an oxide insulating film having a low density of states due to nitrogen oxide between the energy level of the valence band maximum (E v — os ) and the energy level of the conduction band minimum (E c — os ) of the oxide semiconductor film.
  • a silicon oxynitride film that releases less nitrogen oxide, an aluminum oxynitride film that releases less nitrogen oxide, or the like can be used as the oxide insulating film in which the density of states due to nitrogen oxide is low between E v — os and E c — os .
  • a silicon oxynitride film that releases less nitrogen oxide is a film which releases more ammonia molecules than the nitrogen oxide in thermal desorption spectroscopy analysis; the number of ammonia molecules released from the silicon oxynitride film is typically greater than or equal to 1 ⁇ 10 18 molecules/cm 3 and less than or equal to 5 ⁇ 10 19 molecules/cm 3 .
  • the number of ammonia molecules released from a film is the number of ammonia molecules released by heat treatment with which the surface temperature of the film becomes higher than or equal to 50° C. and lower than or equal to 650° C., or preferably higher than or equal to 50° C. and lower than or equal to 550° C.
  • Nitrogen oxide (NO x ; x is greater than or equal to 0 and less than or equal to 2, or preferably greater than or equal to 1 and less than or equal to 2), typically NO 2 or NO, forms levels in the insulating film 114 , for example.
  • the level is positioned in the energy gap of the oxide semiconductor film 108 . Therefore, when nitrogen oxide is diffused to the interface between the insulating film 114 and the oxide semiconductor film 108 , an electron is trapped by the level on the insulating film 114 side. As a result, the trapped electron remains in the vicinity of the interface between the insulating film 114 and the oxide semiconductor film 108 ; thus, the threshold voltage of the transistor is shifted in the positive direction.
  • Nitrogen oxide reacts with ammonia and oxygen in heat treatment. Since nitrogen oxide contained in the insulating film 114 reacts with ammonia contained in the insulating film 116 in heat treatment, nitrogen oxide contained in the insulating film 114 is reduced. Therefore, an electron is hardly trapped at the interface between the insulating film 114 and the oxide semiconductor film 108 .
  • the oxide insulating film having a low density of states of nitrogen oxide between E v — os and E c — os By using, for the insulating film 114 , the oxide insulating film having a low density of states of nitrogen oxide between E v — os and E c — os , the shift in the threshold voltage of the transistor can be reduced, which leads to a smaller change in the electrical characteristics of the transistor.
  • a first signal that appears at a g-factor greater than or equal to 2.037 and less than or equal to 2.039, a second signal that appears at a g-factor greater than or equal to 2.001 and less than or equal to 2.003, and a third signal that appears at a g-factor greater than or equal to 1.964 and less than or equal to 1.966 are observed.
  • the split width of the first and second signals and the split width of the second and third signals that are obtained by ESR measurement using an X-band are each approximately 5 mT.
  • the sum of the spin densities of the first signal that appears at a g-factor greater than or equal to 2.037 and less than or equal to 2.039, the second signal that appears at a g-factor greater than or equal to 2.001 and less than or equal to 2.003, and the third signal that appears at a g-factor greater than or equal to 1.964 and less than or equal to 1.966 is lower than 1 ⁇ 10 18 spins/cm 3 , typically higher than or equal to 1 ⁇ 10 17 spins/cm 3 and lower than 1 ⁇ 10 18 spins/cm 3 .
  • the first signal that appears at a g-factor greater than or equal to 2.037 and less than or equal to 2.039, the second signal that appears at a g-factor greater than or equal to 2.001 and less than or equal to 2.003, and the third signal that appears at a g-factor greater than or equal to 1.964 and less than or equal to 1.966 correspond to signals attributed to nitrogen oxide (NO x ; x is greater than or equal to 0 and smaller than or equal to 2, or preferably greater than or equal to 1 and less than or equal to 2).
  • nitrogen oxide include nitrogen monoxide and nitrogen dioxide.
  • the concentration of nitrogen of the oxide insulating film having a low density of states of nitrogen oxide between E v — os and E c — os measured by secondary mass spectrometry (SIMS) is lower than or equal to 6 ⁇ 10 20 atoms/cm 3 .
  • the oxide insulating film in which the density of states of nitrogen oxide is low between E v — os and E c — os is formed by a PECVD method at a substrate temperature higher than or equal to 220° C., higher than or equal to 280° C., or higher than or equal to 350° C. using silane and dinitrogen monoxide, whereby a dense and hard film can be formed.
  • the insulating film 116 is provided more apart from the oxide semiconductor film 108 than the insulating film 114 is; thus, the insulating film 116 may have higher density of defects than the insulating film 114 .
  • the conductive film 120 a can be formed using a material and a method which are similar to those of the conductive film 120 described above.
  • films such as the conductive films, the insulating films, and the oxide semiconductor films which are described above can be formed by a sputtering method or a PECVD method
  • such films may be formed by another method, e.g., a thermal chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.
  • CVD thermal chemical vapor deposition
  • ALD atomic layer deposition
  • MOCVD metal organic chemical vapor deposition
  • a thermal CVD method has an advantage that no defect due to plasma damage is generated since it does not utilize plasma for forming a film.
  • Deposition by a thermal CVD method may be performed in such a manner that a source gas and an oxidizer are supplied to the chamber at a time so that the pressure in a chamber is set to an atmospheric pressure or a reduced pressure, and react with each other in the vicinity of the substrate or over the substrate.
  • Deposition by an ALD method may be performed in such a manner that the pressure in a chamber is set to an atmospheric pressure or a reduced pressure, source gases for reaction are sequentially introduced into the chamber, and then the sequence of the gas introduction is repeated.
  • source gases for reaction are sequentially introduced into the chamber, and then the sequence of the gas introduction is repeated.
  • two or more kinds of source gases are sequentially supplied to the chamber by switching respective switching valves (also referred to as high-speed valves).
  • a first source gas is introduced, an inert gas (e.g., argon or nitrogen) or the like is introduced at the same time as or after the introduction of the first gas so that the source gases are not mixed, and then a second source gas is introduced.
  • an inert gas e.g., argon or nitrogen
  • the inert gas serves as a carrier gas, and the inert gas may also be introduced at the same time as the introduction of the second source gas.
  • the first source gas may be exhausted by vacuum evacuation instead of the introduction of the inert gas, and then the second source gas may be introduced.
  • the first source gas is adsorbed on the surface of the substrate to form a first layer; then the second source gas is introduced to react with the first layer; as a result, a second layer is stacked over the first layer, so that a thin film is formed.
  • the sequence of the gas introduction is repeated plural times until a desired thickness is obtained, whereby a thin film with excellent step coverage can be formed.
  • the thickness of the thin film can be adjusted by the number of repetition times of the sequence of the gas introduction; therefore, an ALD method makes it possible to accurately adjust a thickness and thus is suitable for manufacturing a minute FET.
  • the variety of films such as the conductive films, the insulating films, the oxide semiconductor films, and the metal oxide films in this embodiment can be formed by a thermal CVD method such as an MOCVD method.
  • a thermal CVD method such as an MOCVD method.
  • trimethylindium, trimethylgallium, and dimethylzinc are used.
  • the chemical formula of trimethylindium is In(CH 3 ) 3 .
  • the chemical formula of trimethylgallium is Ga(CH 3 ) 3 .
  • the chemical formula of dimethylzinc is Zn(CH 3 ) 2 .
  • triethylgallium (chemical formula: Ga(C 2 H 5 ) 3 ) can be used instead of trimethylgallium and diethylzinc (chemical formula: Zn(C 2 H 5 ) 2 ) can be used instead of dimethylzinc.
  • a hafnium oxide film is formed by a deposition apparatus using an ALD method
  • two kinds of gases i.e., ozone (O 3 ) as an oxidizer and a source gas which is obtained by vaporizing liquid containing a solvent and a hafnium precursor compound (e.g., a hafnium alkoxide or a hafnium amide such as tetrakis(dimethylamide)hafnium (TDMAH)
  • a hafnium precursor compound e.g., a hafnium alkoxide or a hafnium amide such as tetrakis(dimethylamide)hafnium (TDMAH)
  • TDMAH tetrakis(dimethylamide)hafnium
  • the chemical formula of tetrakis(dimethylamide)hafnium is Hf[N(CH 3 ) 2 ] 4 .
  • another material liquid include tetrakis(eth
  • an aluminum oxide film is formed by a deposition apparatus using an ALD method
  • two kinds of gases e.g., H 2 O as an oxidizer and a source gas which is obtained by vaporizing liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA)) are used.
  • TMA trimethylaluminum
  • the chemical formula of trimethylaluminum is Al(CH 3 ) 3 .
  • another material liquid include tris(dimethylamide)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).
  • hexachlorodisilane is adsorbed on a surface where a film is to be formed, chlorine included in the adsorbate is removed, and radicals of an oxidizing gas (e.g., O 2 or dinitrogen monoxide) are supplied to react with the adsorbate.
  • an oxidizing gas e.g., O 2 or dinitrogen monoxide
  • a WF 6 gas and a B 2 H 6 gas are sequentially introduced plural times to form an initial tungsten film, and then a WF 6 gas and an H 2 gas are sequentially introduced plural times to form a tungsten film.
  • an SiH 4 gas may be used instead of a B 2 H 6 gas.
  • an oxide semiconductor film e.g., an In—Ga—Zn—O film
  • an In(CH 3 ) 3 gas and an O 3 gas are sequentially introduced plural times to form an In—O layer
  • a Ga(CH 3 ) 3 gas and an O 3 gas are sequentially introduced plural times to form a GaO layer
  • a Zn(CH 3 ) 2 gas and an O 3 gas are sequentially introduced plural times to form a ZnO layer.
  • a mixed compound layer such as an In—Ga—O layer, an In—Zn—O layer, or a Ga—Zn—O layer may be formed by using of these gases.
  • an H 2 O gas which is obtained by bubbling with an inert gas such as Ar may be used instead of an O 3 gas, it is preferable to use an O 3 gas, which does not contain H.
  • an In(CH 3 ) 3 gas instead of an In(CH 3 ) 3 gas, an In(C 2 H 5 ) 3 gas may be used.
  • a Ga(CH 3 ) 3 gas instead of a Ga(C 2 H 5 ) 3 gas, a Zn(CH 3 ) 2 gas may be used.
  • FIG. 4A is a top view of a transistor 150 that is a semiconductor device of one embodiment of the present invention.
  • FIG. 4B is a cross-sectional view taken along a dashed dotted line X 1 -X 2 in FIG. 4A
  • FIG. 4C is a cross-sectional view taken along a dashed dotted line Y 1 -Y 2 in FIG. 4A .
  • the transistor 150 includes the conductive film 104 a over the substrate 102 , the insulating film 106 over the substrate 102 and the conductive film 104 a , the oxide semiconductor film 108 over the insulating film 106 , the insulating film 114 over the oxide semiconductor film 108 , the insulating film 116 over the insulating film 114 , and the conductive films 112 a and 112 b functioning as source and drain electrodes electrically connected to the oxide semiconductor film 108 though openings 141 a and 141 b provided in the insulating films 114 and 116 .
  • the insulating film 118 is provided.
  • An opening 142 b reaching the conductive film 112 b is provided in the insulating film 118 , through which the conductive film 120 a electrically connected to the conductive film 112 b is provided.
  • the insulating film 122 is provided over the insulating film 118 and the conductive film 120 a . Note that the insulating film 122 is formed so as to cover the end portion of the conductive film 120 a , and the conductive film 120 a includes a region not covered with the insulating film 122 .
  • the insulating films 114 and 116 collectively function as a protective insulating film for the oxide semiconductor film 108 .
  • the insulating film 118 functions as a protective insulating film for the transistor 150 .
  • the insulating film 122 functions as a protective insulating film for the transistor 150 and a protective insulating film for the conductive film 120 a .
  • the conductive film 120 a functions as a pixel electrode used for a display device.
  • the insulating film 106 functions as a gate insulating film of the transistor 150 .
  • the transistor 100 described above has a channel-etched structure
  • the transistor 150 in FIGS. 4A to 4C has a channel-protective structure.
  • either the channel-etched structure or the channel-protective structure can be applied to the semiconductor device of one embodiment of the present invention.
  • the transistor 150 is provided with the insulating film 114 over the oxide semiconductor film 108 ; therefore, oxygen contained in the insulating film 114 or oxygen contained in the insulating film 116 can fill an oxygen vacancy in the oxide semiconductor film 108 .
  • the insulating film 122 functioning as a protective insulating film is provided over the transistor 150 ; therefore, impurities that might be bonded to oxygen vacancies in the oxide semiconductor film 108 are reduced.
  • the insulating film 122 is provided over the transistor 150 , entry of moisture from the outside can be suppressed.
  • FIG. 5A is a top view of a transistor 160 that is a semiconductor device of one embodiment of the present invention.
  • FIG. 5B is a cross-sectional view taken along a dashed dotted line X 1 -X 2 in FIG. 5A
  • FIG. 5C is a cross-sectional view taken along a dashed dotted line Y 1 -Y 2 in FIG. 5A .
  • the transistor 160 includes the conductive film 104 a over the substrate 102 , the insulating film 106 over the substrate 102 and the conductive film 104 a , the oxide semiconductor film 108 over the insulating film 106 , the insulating film 114 over the oxide semiconductor film 108 , the insulating film 116 over the insulating film 114 , and the conductive films 112 a and 112 b functioning as source and drain electrodes electrically connected to the oxide semiconductor film 108 .
  • the insulating film 118 is provided over the transistor 160 , specifically, over the conductive films 112 a and 112 b and the insulating film 116 .
  • the opening 142 b reaching the conductive film 112 b is provided in the insulating film 118 , through which the conductive film 120 a electrically connected to the conductive film 112 b is provided.
  • the insulating film 122 is provided over the insulating film 118 and the conductive film 120 a . Note that the insulating film 122 is formed so as to cover the end portion of the conductive film 120 a , and the conductive film 120 a includes a region not covered with the insulating film 122 .
  • the insulating films 114 and 116 collectively function as a protective insulating film for the oxide semiconductor film 108 .
  • the insulating film 118 functions as a protective insulating film for the transistor 160 .
  • the insulating film 122 functions as a protective insulating film for the transistor 160 and a protective insulating film for the conductive film 120 a .
  • the conductive film 120 a functions as a pixel electrode used for a display device.
  • the insulating film 106 functions as a gate insulating film of the transistor 160 .
  • the transistor 160 is different from the transistor 150 described above in the shapes of the insulating films 114 and 116 . Specifically, the insulating films 114 and 116 of the transistor 160 have an island shape and are provided over a channel region of the oxide semiconductor film 108 . The other components are the same as those of the transistor 150 , and the effect similar to that in the case of the transistor 150 is obtained.
  • FIG. 6A is a top view of a transistor 170 that is a semiconductor device of one embodiment of the present invention.
  • FIG. 6B is a cross-sectional view taken along a dashed dotted line X 1 -X 2 in FIG. 6A
  • FIG. 6C is a cross-sectional view taken along a dashed dotted line Y 1 -Y 2 in FIG. 6A .
  • the transistor 170 includes the conductive film 104 a over the substrate 102 , the insulating film 106 over the substrate 102 and the conductive film 104 a , the oxide semiconductor film 108 over the insulating film 106 , the insulating film 114 over the oxide semiconductor film 108 , the insulating film 116 over the insulating film 114 , and the conductive films 112 a and 112 b functioning as source and drain electrodes electrically connected to the oxide semiconductor film 108 .
  • the insulating film 118 is provided over the transistor 170 , specifically, over the conductive films 112 a and 112 b and the insulating film 116 .
  • the opening 142 a reaching the conductive film 112 b is provided in the insulating films 114 , 116 , and 118 , through which the conductive film 120 a electrically connected to the conductive film 112 b is provided.
  • the conductive film 120 b is formed over the insulating film 118 to overlap with the oxide semiconductor film 108 .
  • the insulating film 122 is provided over the insulating film 118 and the conductive films 120 a and 120 b . Note that the insulating film 122 is formed so as to cover the end portion of the conductive film 120 a , and the conductive film 120 a includes a region not covered with the insulating film 122 .
  • the insulating films 114 and 116 collectively function as a protective insulating film for the oxide semiconductor film 108 .
  • the insulating film 118 functions as a protective insulating film for the transistor 170 .
  • the insulating film 122 functions as a protective insulating film for the transistor 170 and a protective insulating film for the conductive films 120 a and 120 b .
  • the conductive film 120 a functions as a pixel electrode used for a display device.
  • the insulating film 106 functions as a gate insulating film of the transistor 170 .
  • the conductive film 104 a in the transistor 170 functions as a first gate electrode.
  • the insulating film 106 in the transistor 170 functions as gate insulating film.
  • the insulating films 114 , 116 , and 118 collectively function as a second gate insulating film of the transistor 170 .
  • the conductive film 120 b in the transistor 170 functions as a second gate electrode (also referred to as a back gate electrode).
  • the conductive film 120 b is connected to the conductive film 104 a functioning as a first gate electrode through openings 142 c and 142 d provided in the insulating films 106 , 114 , 116 , and 118 . Accordingly, the conductive film 120 b and the conductive film 104 a are supplied with the same potential.
  • one embodiment of the present invention is not limited thereto.
  • a structure in which only one of the openings 142 c and 142 d is provided so that the conductive film 120 b and the conductive film 104 a are connected to each other, or a structure in which the openings 142 c and 142 d are not provided and the conductive film 120 b and the conductive film 104 a are not connected to each other may be employed. Note that in the case where the conductive film 120 b and the conductive film 104 a are not connected to each other, it is possible to apply different potentials to the conductive film 120 b and the conductive film 104 a.
  • the oxide semiconductor film 108 is positioned to face each of the conductive film 104 a functioning as a first gate electrode and the conductive film 120 b functioning as a second gate electrode, and is sandwiched between the two conductive films functioning as gate electrodes.
  • the lengths in the channel length direction and the channel width direction of the conductive film 120 b functioning as a second gate electrode are longer than those in the channel length direction and the channel width direction of the oxide semiconductor film 108 .
  • the whole oxide semiconductor film 108 is covered with the conductive film 120 b with the insulating films 114 , 116 , and 118 positioned therebetween.
  • a side surface of the oxide semiconductor film 108 in the channel width direction faces the conductive film 120 b functioning as a second gate electrode with the insulating films 114 , 116 , and 118 positioned therebetween.
  • the conductive film 104 a functioning as a first gate electrode and the conductive film 120 b functioning as a second gate electrode are connected to each other through the openings provided in the insulating film 106 functioning as a first gate insulating film, and the insulating films 114 , 116 , and 118 collectively functioning as a second gate insulating film; and the conductive film 104 a and the conductive film 120 b surround the oxide semiconductor film 108 with the insulating film 106 functioning as a first gate insulating film, and the insulating films 114 , 116 , and 118 collectively functioning as a second gate insulating film positioned therebetween.
  • Such a structure makes it possible that the oxide semiconductor film 108 included in the transistor 170 is electrically surrounded by electric fields of the conductive film 104 a functioning as a first gate electrode and the conductive film 120 b functioning as a second gate electrode.
  • a device structure of a transistor, like that of the transistor 170 , in which electric fields of a first gate electrode and a second gate electrode electrically surround an oxide semiconductor film where a channel region is formed can be referred to as a surrounded channel (s-channel) structure.
  • the transistor 170 Since the transistor 170 has the s-channel structure, an electric field for inducing a channel can be effectively applied to the oxide semiconductor film 108 by the conductive film 104 a functioning as a first gate electrode; therefore, the current drive capability of the transistor 170 can be improved and high on-state current characteristics can be obtained. Since the on-state current can be increased, it is possible to reduce the size of the transistor 170 . In addition, since the transistor 170 is surrounded by the conductive film 104 a functioning as a first gate electrode and the conductive film 120 b functioning as a second gate electrode, the mechanical strength of the transistor 170 can be increased.
  • FIGS. 7A and 7B each illustrate a cross-sectional view of a modification example of the transistor 100 in FIGS. 3B and 3C .
  • FIGS. 7C and 7D each illustrate a cross-sectional view of another modification example of the transistor 100 in FIGS. 3B and 3C .
  • top views of the transistors illustrated in FIGS. 7A to 7D are omitted here because they are similar to the top view of FIG. 3A .
  • a transistor 100 A illustrated in FIGS. 7A and 7B has the same structure as the transistor 100 illustrated in FIGS. 3B and 3C except that the oxide semiconductor film 108 has a three-layer structure.
  • the oxide semiconductor film 108 of the transistor 100 A includes an oxide semiconductor film 108 a , an oxide semiconductor film 108 b , and an oxide semiconductor film 108 c.
  • a transistor 100 B illustrated in FIGS. 7C and 7D has the same structure as the transistor 100 in FIGS. 3B and 3C except that the oxide semiconductor film 108 has a two-layer structure.
  • the oxide semiconductor film 108 of the transistor 100 B includes the oxide semiconductor film 108 a and the oxide semiconductor film 108 b.
  • FIGS. 8A and 8B a band structure including the oxide semiconductor films 108 a , 108 b , and 108 c and insulating films in contact with the oxide semiconductor film 108 is described with reference to FIGS. 8A and 8B .
  • FIG. 8A shows an example of a band structure in the thickness direction of a stack of the insulating film 106 b , the oxide semiconductor films 108 a , 108 b , and 108 c , and the insulating film 114 .
  • FIG. 8B shows an example of a band structure in the thickness direction of a stack of the insulating film 106 b , the oxide semiconductor films 108 a and 108 b , and the insulating film 114 .
  • the energy level of the conduction band minimum (Ec) of each of the insulating film 106 b , the oxide semiconductor films 108 a , 108 b , and 108 c , and the insulating film 114 is shown in the band structures.
  • the energy level of the conduction band minimum smoothly varies between the oxide semiconductor film 108 a and the oxide semiconductor film 108 b .
  • the conduction band minimum is continuously varied or a continuous junction is formed.
  • the oxide semiconductor film 108 a serves as a well, and a channel region is formed in the oxide semiconductor film 108 a in the transistor with the above stacked-layer structure.
  • the oxide semiconductor film 108 a can be distanced away from trap states.
  • the trap states might be more distant from the vacuum level than the energy level of the conduction band minimum (Ec) of the oxide semiconductor film 108 a functioning as a channel region, so that electrons are likely to be accumulated in the trap states.
  • the electrons When the electrons are accumulated in the trap states, the electrons become negative fixed electric charge, so that the threshold voltage of the transistor is shifted in the positive direction. Therefore, it is preferable that the trap states be closer to the vacuum level than the energy level of the conduction band minimum (Ec) of the oxide semiconductor film 108 a .
  • Such a structure inhibits accumulation of electrons in the trap states. As a result, the on-state current and the field-effect mobility of the transistor can be increased.
  • the energy level of the conduction band minimum of each of the oxide semiconductor films 108 b and 108 c is closer to the vacuum level than that of the oxide semiconductor film 108 a .
  • an energy difference between the conduction band minimum of the oxide semiconductor film 108 a and the conduction band minimum of each of the oxide semiconductor films 108 b and 108 c is greater than or equal to 0.15 eV or greater than or equal to 0.5 eV, and less than or equal to 2 eV or less than or equal to 1 eV.
  • the difference between the electron affinity of each of the oxide semiconductor films 108 b and 108 c and the electron affinity of the oxide semiconductor film 108 a is greater than or equal to 0.15 eV or greater than or equal to 0.5 eV, and less than or equal to 2 eV or less than or equal to 1 eV.
  • the oxide semiconductor film 108 a serves as a main path of current and functions as a channel region.
  • the oxide semiconductor films 108 b and 108 c each include one or more metal elements included in the oxide semiconductor film 108 a in which a channel region is formed, interface scattering is less likely to occur at the interface between the oxide semiconductor film 108 a and the oxide semiconductor film 108 b .
  • the transistor can have high field-effect mobility because the movement of carriers is not hindered at the interface.
  • a material having sufficiently low conductivity is used for the oxide semiconductor films 108 b and 108 c .
  • a material which has a smaller electron affinity (a difference in energy level between the vacuum level and the energy level of the conduction band minimum) than the oxide semiconductor film 108 a and has a difference in the energy level of the conduction band minimum from the oxide semiconductor film 108 a (band offset) is used for the oxide semiconductor films 108 b and 108 c .
  • the oxide semiconductor films 108 b and 108 c using a material whose energy level of the conduction band minimum is closer to the vacuum level than that of the oxide semiconductor film 108 a by 0.2 eV or more, preferably 0.5 eV or more.
  • the oxide semiconductor films 108 b and 108 c not have a spinel crystal structure. This is because if the oxide semiconductor films 108 b and 108 c have a spinel crystal structure, components of the conductive films 112 a and 112 b might be diffused into the oxide semiconductor film 108 a at the interface between the spinel crystal structure and another region.
  • each of the oxide semiconductor films 108 b and 108 c is preferably a CAAC-OS, which is described later, in which case a higher blocking property against components of the conductive films 112 a and 112 b , e.g., copper elements, is obtained.
  • each of the oxide semiconductor films 108 b and 108 c is greater than or equal to a thickness that is capable of inhibiting diffusion of the components of the conductive films 112 a and 112 b into the oxide semiconductor film 108 a , and less than a thickness that inhibits supply of oxygen from the insulating film 114 to the oxide semiconductor film 108 a .
  • a thickness that is capable of inhibiting diffusion of the components of the conductive films 112 a and 112 b into the oxide semiconductor film 108 a and less than a thickness that inhibits supply of oxygen from the insulating film 114 to the oxide semiconductor film 108 a .
  • the thickness of each of the oxide semiconductor films 108 b and 108 c is greater than or equal to 10 nm, the components of the conductive films 112 a and 112 b can be prevented from diffusing into the oxide semiconductor film 108 a .
  • the thickness of each of the oxide semiconductor films 108 b and 108 c is less than or equal to 100 nm,
  • the oxide semiconductor films 108 b and 108 c are each an In-M-Zn oxide in which the atomic ratio of the element M (M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf) is higher than that of In, the energy gap of each of the oxide semiconductor films 108 b and 108 c can be large and the electron affinity thereof can be small. Therefore, a difference in electron affinity between the oxide semiconductor film 108 a and each of the oxide semiconductor films 108 b and 108 c may be controlled by the proportion of the element M.
  • M is Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf
  • an oxygen vacancy is less likely to be generated in the oxide semiconductor film in which the atomic ratio of Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf is higher than that of In because Ti, Ga, Y, Zr, La, Ce, Nd, Sn, and Hf each are a metal element that is strongly bonded to oxygen.
  • the proportions of In and M is preferably as follows: the atomic percentage of In is less than 50 atomic % and the atomic percentage of M is greater than or equal to 50 atomic %; further preferably, the atomic percentage of In is less than 25 atomic % and the atomic percentage of M is greater than or equal to 75 atomic %.
  • a gallium oxide film may be used as each of the oxide semiconductor films 108 b and 108 c.
  • each of the oxide semiconductor films 108 a , 108 b , and 108 c is an In-M-Zn oxide
  • the proportion of M atoms in each of the oxide semiconductor films 108 b and 108 c is higher than that in the oxide semiconductor film 108 a .
  • the proportion of M in each of the oxide semiconductor films 108 b and 108 c is 1.5 or more times, preferably twice or more, or further preferably three or more times as high as that in the oxide semiconductor film 108 a.
  • the oxide semiconductor films 108 a , 108 b , and 108 c are each an In-M-Zn oxide
  • y 2 /x 2 is larger than y 1 /x 1
  • preferably y 2 /x 2 is 1.5 or more times as large as y 1 /x 1
  • y 2 /x 2 is two or more times as large as y 1 /x 1
  • or still further preferably y 2 /x 2 is three or more times or four or more times as large as y 1 /x 1 .
  • y 1 is preferably greater than or equal to x 1 in the oxide semiconductor film 108 a , because stable electrical characteristics of the transistor can be achieved. However, when y 1 is three or more times as large as x 1 , the field-effect mobility of the transistor including the oxide semiconductor film 108 a is reduced. Accordingly, y 1 is preferably smaller than three times x 1 .
  • x 1 /y 1 is preferably greater than or equal to 1 ⁇ 3 and less than or equal to 6, further preferably greater than or equal to 1 and less than or equal to 6, and z 1 /y 1 is preferably greater than or equal to 1 ⁇ 3 and less than or equal to 6, further preferably greater than or equal to 1 and less than or equal to 6.
  • x 2 /y 2 is preferably less than x 1 /y 1
  • z 2 /y 2 is preferably greater than or equal to 1 ⁇ 3 and less than or equal to 6, further preferably greater than or equal to 1 and less than or equal to 6.
  • the oxide semiconductor films 108 b and 108 c are each an In-M oxide
  • a divalent metal element e.g., zinc
  • the oxide semiconductor films 108 b and 108 c which do not include a spinel crystal structure can be formed.
  • an In—Ga oxide film can be used as the oxide semiconductor films 108 b and 108 c .
  • y/(x+y) be less than or equal to 0.96, or further preferably less than or equal to 0.95, for example, 0.93.
  • the proportions of the atoms in the above atomic ratio vary within a range of ⁇ 40% as an error.
  • the structures of the transistors of this embodiment can be freely combined with each other.
  • FIGS. 9A to 9C a method for manufacturing a semiconductor device of one embodiment of the present invention is described below in detail with reference to FIGS. 9A to 9C , FIGS. 10 A and 10 B, FIGS. 11A and 11B , and FIGS. 12A and 12B .
  • the semiconductor device in FIGS. 1A and 1B and the transistor 100 in FIGS. 3A to 3C can be formed in the same process. Therefore, the manufacturing method in FIGS. 9A to 9C , FIGS. 10A and 10B , FIGS. 11A and 11B , and FIGS. 12A and 12B illustrates both a manufacturing method of the semiconductor device in FIGS. 1A and 1B and that of the transistor 100 in FIGS. 3A to 3C .
  • the films included in the semiconductor device can be formed by any of a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, and a pulsed laser deposition (PLD) method.
  • a coating method or a printing method can be used.
  • a thermal CVD method may be used.
  • a metal organic chemical vapor deposition (MOCVD) method or an atomic layer deposition (ALD) method may be used, for example.
  • Deposition by the thermal CVD method may be performed in such a manner that the pressure in a chamber is set to an atmospheric pressure or a reduced pressure, and a source gas and an oxidizer are supplied to the chamber at a time and react with each other in the vicinity of the substrate or over the substrate.
  • the thermal CVD method has an advantage that no defect due to plasma damage is caused.
  • Deposition by the ALD method may be performed in such a manner that the pressure in a chamber is set to an atmospheric pressure or a reduced pressure, source gases for reaction are sequentially introduced into the chamber, and then the sequence of the gas introduction is repeated.
  • source gases for reaction are sequentially introduced into the chamber, and then the sequence of the gas introduction is repeated.
  • two or more kinds of source gases are sequentially supplied to the chamber by switching valves (also referred to as high-speed valves).
  • a first source gas is introduced, an inert gas (e.g., argon or nitrogen) or the like is introduced at the same time as or after introduction of the first gas so that the source gases are not mixed, and then a second source gas is introduced.
  • an inert gas e.g., argon or nitrogen
  • the inert gas serves as a carrier gas, and the inert gas may also be introduced at the same time as the introduction of the second source gas.
  • the first source gas may be exhausted by vacuum evacuation instead of the introduction of the inert gas, and then the second source gas may be introduced.
  • the first source gas is adsorbed on the surface of the substrate to form a first single-atomic layer; then the second source gas is introduced to react with the first single-atomic layer; as a result, a second single-atomic layer is stacked over the first single-atomic layer, so that a thin film is formed.
  • the sequence of the gas introduction is repeated plural times until a desired thickness is obtained, whereby a thin film with excellent step coverage can be formed.
  • the thickness of the thin film can be adjusted by the number of repetition times of the sequence of the gas introduction; therefore, an ALD method makes it possible to accurately adjust a thickness and thus is suitable for manufacturing a minute transistor.
  • a conductive film is formed over the substrate 102 and processed through a lithography process and an etching process, whereby the conductive film 104 and the conductive film 104 a functioning as a gate electrode of the transistor 100 are formed. Then, the insulating films 106 a and 106 b are formed over the conductive films 104 and 104 a (see FIG. 9A ).
  • the conductive film 104 and the conductive film 104 a functioning as a gate electrode can be formed by a sputtering method, a CVD method, a vacuum evaporation method, or a PLD method. Alternatively, a coating method or a printing method can be used. Although typical deposition methods are a sputtering method and PECVD method, a thermal CVD method, such as an MOCVD method, or an ALD method described above may be used.
  • a glass substrate is used as the substrate 102 , and as the conductive film 104 and the conductive film 104 a functioning as a gate electrode, a 100-nm-thick tungsten film is formed by a sputtering method.
  • the insulating films 106 a and 106 b can be formed by a sputtering method, a PECVD method, a thermal CVD method, a vacuum evaporation method, a PLD method, or the like.
  • a 400-nm-thick silicon nitride film as the insulating film 106 a and a 50-nm-thick silicon oxynitride film as the insulating film 106 b are formed by a PECVD method.
  • the insulating film 106 a can have a stacked-layer structure of silicon nitride films. Specifically, the insulating film 106 a can have a three-layer structure of a first silicon nitride film, a second silicon nitride film, and a third silicon nitride film.
  • An example of the three-layer structure is as follows.
  • the first silicon nitride film can be formed to have a thickness of 50 nm under the condition where silane at a flow rate of 200 sccm, nitrogen at a flow rate of 2000 sccm, and an ammonia gas at a flow rate of 100 sccm are supplied as a source gas to a reaction chamber of a PECVD apparatus; the pressure in the reaction chamber is controlled to 100 Pa, and a power of 2000 W is supplied using a 27.12 MHz high-frequency power source.
  • the second silicon nitride film can be formed to have a thickness of 300 nm under the condition where silane at a flow rate of 200 sccm, nitrogen at a flow rate of 2000 sccm, and an ammonia gas at a flow rate of 2000 sccm are supplied as a source gas to the reaction chamber of the PECVD apparatus; the pressure in the reaction chamber is controlled to 100 Pa, and a power of 2000 W is supplied using a 27.12 MHz high-frequency power source.
  • the third silicon nitride film can be formed to have a thickness of 50 nm under the condition where silane at a flow rate of 200 sccm and nitrogen at a flow rate of 5000 sccm are supplied as a source gas to the reaction chamber of the PECVD apparatus; the pressure in the reaction chamber is controlled to 100 Pa, and a power of 2000 W is supplied using a 27.12 MHz high-frequency power source.
  • first silicon nitride film, the second silicon nitride film, and the third silicon nitride film can be each formed at a substrate temperature of 350° C.
  • the insulating film 106 a has the three-layer structure of silicon nitride films, for example, in the case where a conductive film including Cu is used as the conductive films 104 and 104 a , the following effect can be obtained.
  • the first silicon nitride film can inhibit diffusion of a copper (Cu) element from the conductive films 104 and 104 a .
  • the second silicon nitride film has a function of releasing hydrogen and can improve withstand voltage of the insulating film functioning as a gate insulating film.
  • the third silicon nitride film releases a small amount of hydrogen and can inhibit diffusion of hydrogen released from the second silicon nitride film.
  • the insulating film 106 b is preferably an insulating film containing oxygen to improve characteristics of an interface with the oxide semiconductor film 108 formed later.
  • the oxide semiconductor film 108 is formed over the insulating film 106 b (see FIG. 9B ).
  • heat treatment may be performed at a temperature higher than or equal to 150° C. and lower than the strain point of the substrate, preferably higher than or equal to 200° C. and lower than or equal to 450° C., or further preferably higher than or equal to 300° C. and lower than or equal to 450° C.
  • the heat treatment performed here serves as one kind of treatment for increasing the purity of the oxide semiconductor film and can reduce hydrogen, water, and the like contained in the oxide semiconductor film 108 .
  • the heat treatment for the purpose of reducing hydrogen, water, and the like may be performed before the oxide semiconductor film 108 is processed into an island shape.
  • An electric furnace, an RTA apparatus, or the like can be used for the heat treatment performed on the oxide semiconductor film 108 .
  • the heat treatment can be performed at a temperature higher than or equal to the strain point of the substrate if the heating time is short. Therefore, the heat treatment time can be shortened.
  • the heat treatment performed on the oxide semiconductor film 108 may be performed under an atmosphere of nitrogen, oxygen, ultra-dry air (air in which a water content is 20 ppm or less, preferably 1 ppm or less, or further preferably 10 ppb or less), or a rare gas (argon, helium, or the like).
  • the atmosphere of nitrogen, oxygen, ultra-dry air, or a rare gas preferably does not contain hydrogen, water, and the like.
  • heat treatment may be additionally performed in an oxygen atmosphere or an ultra-dry air atmosphere.
  • the oxide semiconductor film 108 is formed by a sputtering method
  • a rare gas typically argon
  • oxygen or a mixed gas of a rare gas and oxygen
  • the proportion of oxygen to a rare gas is preferably increased.
  • increasing the purity of a sputtering gas is necessary.
  • an oxygen gas or an argon gas used for a sputtering gas a gas which is highly purified to have a dew point of ⁇ 40° C. or lower, preferably ⁇ 80° C. or lower, further preferably ⁇ 100° C. or lower, or still further preferably ⁇ 120° C. or lower is used, whereby entry of moisture or the like into the oxide semiconductor film 108 can be minimized.
  • a chamber in a sputtering apparatus is preferably evacuated to be a high vacuum state (to the degree of about 5 ⁇ 10 ⁇ 7 Pa to 1 ⁇ 10 ⁇ 4 Pa) with an adsorption vacuum evacuation pump such as a cryopump in order to remove water or the like, which serves as an impurity for the oxide semiconductor film 108 , as much as possible.
  • an adsorption vacuum evacuation pump such as a cryopump
  • a turbo molecular pump and a cold trap are preferably combined so as to prevent a backflow of a gas, especially a gas including carbon or hydrogen from an exhaust system to the inside of the chamber.
  • the conductive film 112 is formed over the insulating film 106 b and the conductive films 112 a and 112 b functioning as a source electrode and a drain electrode are formed over the insulating film 106 b and the oxide semiconductor film 108 (see FIG. 9C ).
  • the conductive film 112 and the conductive films 112 a and 112 b are formed in the following manner: a stack formed of a 50-nm-thick tungsten film and a 400-nm-thick aluminum film is formed by a sputtering method, a mask is formed over the stack through a lithography process, and the stack is processed into desired shapes.
  • a stack formed of a 50-nm-thick tungsten film and a 400-nm-thick aluminum film is formed by a sputtering method
  • a mask is formed over the stack through a lithography process
  • the stack is processed into desired shapes.
  • the conductive film 112 and the conductive films 112 a and 112 b each have a two-layer structure in this embodiment, one embodiment of the present invention is not limited thereto.
  • the conductive film 112 and the conductive films 112 a and 112 b each may have a three-layer structure formed of a 50-nm-thick tungsten film, a 400-nm-thick aluminum film, and a 100-nm-thick titanium film.
  • a surface of the oxide semiconductor film 108 may be cleaned.
  • the cleaning may be performed, for example, using a chemical solution such as phosphoric acid.
  • the cleaning using a chemical solution such as a phosphoric acid can remove impurities (e.g., an element included in the conductive film 112 and the conductive films 112 a and 112 b ) attached to the surface of the oxide semiconductor film 108 .
  • a recessed portion might be formed in part of the oxide semiconductor film 108 at the step of forming the conductive film 112 and the conductive films 112 a and 112 b and/or the cleaning step.
  • the transistor 100 is formed.
  • the insulating films 114 and 116 are formed over the insulating film 106 b and the conductive film 112 and over the oxide semiconductor film 108 and the conductive films 112 a and 112 b (see FIG. 10A ).
  • the insulating film 116 is preferably formed in succession without exposure to the air.
  • the insulating film 116 is formed in succession by adjusting at least one of the flow rate of a source gas, pressure, a high-frequency power, and a substrate temperature without exposure to the air, whereby the concentration of impurities attributed to the atmospheric component at the interface between the insulating film 114 and the insulating film 116 can be reduced and oxygen in the insulating films 114 and 116 can be moved to the oxide semiconductor film 108 ; accordingly, the number of oxygen vacancies in the oxide semiconductor film 108 can be reduced.
  • a silicon oxynitride film can be formed by a PECVD method.
  • a deposition gas containing silicon and an oxidizing gas are preferably used as a source gas.
  • the deposition gas containing silicon include silane, disilane, trisilane, and silane fluoride.
  • the oxidizing gas include dinitrogen monoxide and nitrogen dioxide.
  • An insulating film containing nitrogen and having a small number of defects can be formed as the insulating film 114 by a PECVD method under the conditions where the ratio of the oxidizing gas to the deposition gas is higher than 20 times and lower than 100 times, or preferably higher than or equal to 40 times and lower than or equal to 80 times and the pressure in a treatment chamber is lower than 100 Pa, or preferably lower than or equal to 50 Pa.
  • a silicon oxynitride film is formed as the insulating film 114 by a PECVD method under the conditions where the substrate 102 is held at a temperature of 220° C., silane at a flow rate of 50 sccm and dinitrogen monoxide at a flow rate of 2000 sccm are used as a source gas, the pressure in the treatment chamber is 20 Pa, and a high-frequency power of 100 W at 13.56 MHz (1.6 ⁇ 10 ⁇ 2 W/cm 2 as the power density) is supplied to parallel-plate electrodes.
  • a silicon oxide film or a silicon oxynitride film is formed under the conditions where the substrate placed in a treatment chamber of the PECVD apparatus that is vacuum-evacuated is held at a temperature higher than or equal to 180° C. and lower than or equal to 280° C., or preferably higher than or equal to 200° C.
  • the pressure is greater than or equal to 100 Pa and less than or equal to 250 Pa, or preferably greater than or equal to 100 Pa and less than or equal to 200 Pa with introduction of a source gas into the treatment chamber, and a high-frequency power of greater than or equal to 0.17 W/cm 2 and less than or equal to 0.5 W/cm 2 , or preferably greater than or equal to 0.25 W/cm 2 and less than or equal to 0.35 W/cm 2 is supplied to an electrode provided in the treatment chamber.
  • the high-frequency power having the above power density is supplied to a reaction chamber having the above pressure, whereby the degradation efficiency of the source gas in plasma is increased, oxygen radicals are increased, and oxidation of the source gas is promoted; thus, the oxygen content in the insulating film 116 becomes higher than that in the stoichiometric composition.
  • the bond between silicon and oxygen is weak, and accordingly, part of oxygen in the film is released by heat treatment in a later step.
  • the insulating film 114 functions as a protective film for the oxide semiconductor film 108 in the step of forming the insulating film 116 . Therefore, the insulating film 116 can be formed using the high-frequency power having a high power density while damage to the oxide semiconductor film 108 is reduced.
  • the number of defects in the insulating film 116 can be reduced.
  • the reliability of the transistor can be improved.
  • Heat treatment may be performed after the insulating films 114 and 116 are formed.
  • the heat treatment can reduce nitrogen oxide contained in the insulating films 114 and 116 .
  • part of oxygen contained in the insulating films 114 and 116 can be moved to the oxide semiconductor film 108 , so that the number of oxygen vacancies in the oxide semiconductor film 108 can be reduced.
  • the temperature of the heat treatment performed on the insulating films 114 and 116 is typically higher than or equal to 150° C. and lower than or equal to 400° C., preferably higher than or equal to 300° C. and lower than or equal to 400° C., or further preferably higher than or equal to 320° C. and lower than or equal to 370° C.
  • the heat treatment may be performed under an atmosphere of nitrogen, oxygen, ultra-dry air (air in which a water content is 20 ppm or less, preferably 1 ppm or less, or further preferably 10 ppb or less), or a rare gas (argon, helium, or the like). Note that an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace, an electric furnace,
  • RTA apparatus or the like can be used for the heat treatment, in which it is preferable that hydrogen, water, and the like not be contained in the nitrogen, oxygen, ultra-dry air, or rare gas.
  • the heat treatment is performed at 350° C. in an atmosphere of nitrogen and oxygen for 1 hour.
  • a protective film 130 that inhibits release of oxygen is formed over the insulating film 116 .
  • oxygen 141 is added to the insulating films 114 and 116 and the oxide semiconductor film 108 through the protective film 130 (see FIG. 10B ).
  • the protective film 130 that inhibits release of oxygen contains at least one of indium, zinc, titanium, aluminum, tungsten, tantalum, and molybdenum.
  • a conductive material such as an alloy containing any of the metal elements, an alloy containing any of the metal elements in combination, a metal oxide containing any of the metal elements, a metal nitride containing any of the metal elements, or a metal nitride oxide containing any of the metal elements is used.
  • the thickness of the protective film 130 that inhibits release of oxygen can be greater than or equal to 1 nm and less than or equal to 20 nm, or greater than or equal to 2 nm and less than or equal to 10 nm.
  • a 5-nm-thick tantalum nitride film is used as the protective film 130 .
  • an ion doping method, an ion implantation method, plasma treatment, or the like is given.
  • the protective film 130 serves as a protective film for inhibiting oxygen from being released from the insulating film 116 .
  • a larger amount of oxygen can be added to the insulating films 114 and 116 and the oxide semiconductor film 108 .
  • the oxygen 141 is not necessarily added to the insulating films 114 and 116 and the oxide semiconductor film 108 .
  • oxygen is introduced by plasma treatment
  • the amount of oxygen introduced into the insulating film 116 can be increased.
  • the protective film 130 is removed, and the insulating film 118 is formed over the insulating film 116 (see FIG. 11A ).
  • the protective film 130 becomes the insulating film formed of oxide or nitride of metal (indium, zinc, titanium, aluminum, tungsten, tantalum, or molybdenum).
  • oxide or nitride of metal indium, zinc, titanium, aluminum, tungsten, tantalum, or molybdenum.
  • heat treatment may be performed before or after the formation of the insulating film 118 , so that excess oxygen contained in the insulating films 114 and 116 can be diffused into the oxide semiconductor film 108 to fill an oxygen vacancy in the oxide semiconductor film 108 .
  • the insulating film 118 may be deposited by heating, so that excess oxygen contained in the insulating films 114 and 116 can be diffused into the oxide semiconductor film 108 to fill an oxygen vacancy in the oxide semiconductor film 108 .
  • the substrate temperature is preferably set to higher than or equal to 300° C. and lower than or equal to 400° C., or further preferably higher than or equal to 320° C. and lower than or equal to 370° C., so that a dense film can be formed.
  • a deposition gas containing silicon, nitrogen, and ammonia are preferably used as a source gas.
  • a small amount of ammonia compared to the amount of nitrogen is used, whereby ammonia is dissociated in the plasma and activated species are generated.
  • the activated species cleave a bond between silicon and hydrogen which are included in a deposition gas containing silicon and a triple bond between nitrogen molecules.
  • a flow rate ratio of the nitrogen to the ammonia is set to be greater than or equal to 5 and less than or equal to 50, or preferably greater than or equal to 10 and less than or equal to 50.
  • a 50-nm-thick silicon nitride film is formed as the insulating film 118 using silane, nitrogen, and ammonia as a source gas.
  • the flow rate of silane is 50 sccm
  • the flow rate of nitrogen is 5000 sccm
  • the flow rate of ammonia is 100 sccm.
  • the pressure in the treatment chamber is 100 Pa
  • the substrate temperature is 350° C.
  • high-frequency power of 1000 W is supplied to parallel-plate electrodes with a 27.12 MHz high-frequency power source.
  • the PECVD apparatus is a parallel-plate PECVD apparatus in which the electrode area is 6000 cm 2 , and the power per unit area (power density) into which the supplied power is converted is 1.7 ⁇ 10 ⁇ 1 W/cm 2 .
  • Heat treatment may be performed after the formation of the insulating film 118 .
  • the heat treatment is performed typically at a temperature higher than or equal to 150° C. and lower than or equal to 400° C., preferably higher than or equal to 300° C. and lower than or equal to 400° C., or further preferably higher than or equal to 320° C. and lower than or equal to 370° C.
  • the heat treatment is performed, the amounts of hydrogen and water in the insulating films 114 and 116 are reduced and accordingly the generation of defects in the oxide semiconductor film 108 described above is inhibited.
  • the opening 142 reaching the conductive film 104 is formed by partial removal of the insulating films 106 a and 106 b and the insulating films 114 , 116 , and 118 .
  • the opening 142 a reaching the conductive film 112 b is formed by partial removal of the insulating films 114 , 116 , and 118 (see FIG. 11B ).
  • a mask is formed over the insulating film 118 through a lithography process, and desired regions of the insulating films 106 a and 106 b and the insulating films 114 , 116 , and 118 are processed.
  • the openings 142 and 142 a may be formed using, for example, a gray-tone mask or a half-tone mask.
  • the method for forming the openings 142 and 142 a in the same step is described as an example in this embodiment, without limitation thereto, the openings 142 and 142 a may be formed in different steps, for example.
  • a conductive film is formed over the insulating film 118 , the conductive film 104 , and the conductive film 112 b so as to cover the openings 142 and 142 a , and the conductive film is processed into a desired shape, so that the conductive films 120 and 120 a are formed (see FIG. 12A ).
  • a light-transmitting conductive material such as indium oxide including tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added can be used.
  • the conductive films 120 and 120 a can be formed by a sputtering method, for example. In this embodiment, a 110-nm-thick indium tin oxide film to which silicon oxide is added is formed with a sputtering apparatus.
  • an insulating film is formed over the conductive films 120 and 120 a and is processed into a desired shape, so that the insulating film 122 is formed (see FIG. 12B ).
  • a 100-nm-thick silicon nitride film is formed as the insulating film 122 using silane and nitrogen as a source gas.
  • the flow rate of silane is 200 sccm, and the flow rate of nitrogen is 5000 sccm.
  • the pressure in the treatment chamber is 100 Pa, the substrate temperature is 350° C., and high-frequency power of 2000 W is supplied to parallel-plate electrodes with a 27.12 MHz high-frequency power source.
  • an ammonia gas is not used as a source gas for formation of the insulating film 122 , whereby the amount of ammonia gas released from the insulating film 122 can be suppressed.
  • the semiconductor device illustrated in FIGS. 1A and 7B and FIGS. 3A to 3C can be manufactured.
  • FIGS. 13A to 13D , FIGS. 14A to 14C , and FIGS. 15A and 15B are cross sectional views illustrating the manufacturing method of the transistor 150 .
  • a step similar to the step in FIG. 9B is performed, and then the insulating films 114 and 116 and the protective film 130 that inhibits release of oxygen are formed over the oxide semiconductor film 108 (see FIG. 13A ).
  • the oxygen 141 is added to the insulating films 114 and 116 and the oxide semiconductor film 108 through the protective film 130 (see FIG. 13B ).
  • the protective film 130 is removed, so that the insulating film 116 is exposed (see FIG. 13C ).
  • a mask is formed over the insulating film 116 through a lithography process, and the openings 141 a and 141 b are formed in desired regions in the insulating films 114 and 116 . Note that the openings 141 a and 141 b reach the oxide semiconductor film 108 (see FIG. 13D ).
  • a conductive film is formed over the oxide semiconductor film 108 and the insulating film 116 to cover the openings 141 a and 141 b , a mask is formed over the conductive film through a lithography process, and the conductive film is processed into desired shapes, whereby the conductive films 112 a and 112 b are formed (see FIG. 14A ).
  • the insulating film 118 is formed over the insulating film 116 and the conductive films 112 a and 112 b (see FIG. 14B ).
  • a mask is formed over the insulating film 118 through a lithography process, and the opening 142 b is formed in a desired region in the insulating film 118 . Note that the opening 142 b reaches the conductive film 112 b (see FIG. 14C ).
  • a conductive film is formed over the insulating film 118 and the conductive film 112 b so as to cover the opening 142 b , and the conductive film is processed into a desired shape, so that the conductive film 120 a is formed (see FIG. 15A ).
  • an insulating film is formed over the insulating film 118 and the conductive film 120 a and is processed into a desired shape, so that the insulating film 122 is formed. Note that the insulating film 122 covers the end portion of the conductive film 120 a (see FIG. 15B ).
  • the transistor 150 illustrated in FIGS. 4A to 4C can be manufactured.
  • the transistor 160 in FIGS. 5A to 5C can be manufactured in such a manner that the insulating films 114 and 116 are processed into an island shape over a channel region of the oxide semiconductor film 108 at the formation of the openings 141 a and 141 b in FIG. 13D and then through the same steps as the transistor 150 in FIGS. 4A to 4C .
  • transistor 170 that is a semiconductor device of one embodiment of the present invention is described below in detail with reference to FIGS. 16A to 16D and FIGS. 17A to 17D .
  • FIGS. 16A and 16C and FIGS. 17A and 17C are each a cross-sectional view of the manufacturing method in the channel length direction of the transistor 170 and FIGS. 16B and 16D and FIGS. 17B and 17D are each a cross-sectional view of the manufacturing method in the channel width direction of the transistor 170 .
  • the insulating film 118 is formed over the insulating film 116 (see FIGS. 16A and 16B ).
  • a mask is formed over the insulating film 118 through a lithography process, and the opening 142 a is formed in a desired region in the insulating films 114 , 116 , and 118 .
  • a mask is formed over the insulating film 118 through a lithography process, and the openings 142 c and 142 d are formed in desired regions in the insulating films 106 a , 106 b , 114 , 116 , and 118 .
  • the opening 142 a reaches the conductive film 112 b .
  • the openings 142 c and 142 d each reach the conductive film 104 a (see FIGS. 16C and 16D ).
  • the openings 142 c and 142 d and the opening 142 a may be formed at a time or may be formed by different steps. In the case where the openings 142 c and 142 d and the opening 142 a are formed at a time, for example, a gray-tone mask or a half-tone mask may be used.
  • a conductive film is formed over the insulating film 118 so as to cover the openings 142 a , 142 c , and 142 d , and the conductive film is processed into a desired shape, so that the conductive film 120 a is formed (see FIGS. 17A and 17B ).
  • an insulating film is formed over the insulating film 118 and the conductive films 120 a and 120 b and is processed into a desired shape, so that the insulating film 122 is formed (see FIGS. 17C and 17D ).
  • the transistor 170 illustrated in FIGS. 6A to 6C can be manufactured.
  • An oxide semiconductor is classified into a single crystal oxide semiconductor and a non-single-crystal oxide semiconductor.
  • a non-single-crystal oxide semiconductor include a c-axis aligned crystalline oxide semiconductor (CAAC-OS), a polycrystalline oxide semiconductor, a nanocrystalline oxide semiconductor (nc-OS), an amorphous-like oxide semiconductor (a-like OS), and an amorphous oxide semiconductor.
  • an oxide semiconductor is classified into an amorphous oxide semiconductor and a crystalline oxide semiconductor.
  • examples of a crystalline oxide semiconductor include a single crystal oxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor, and an nc-OS.
  • an amorphous structure is generally defined as being metastable and unfixed, and being isotropic and having no non-uniform structure.
  • an amorphous structure has a flexible bond angle and a short-range order but does not have a long-range order.
  • an inherently stable oxide semiconductor cannot be regarded as a completely amorphous oxide semiconductor.
  • an oxide semiconductor that is not isotropic e.g., an oxide semiconductor film that has a periodic structure in a microscopic region
  • an a-like OS has a periodic structure in a microscopic region, but at the same time has a void and has an unstable structure. For this reason, an a-like OS has physical properties similar to those of an amorphous oxide semiconductor.
  • a CAAC-OS is one of oxide semiconductors having a plurality of c-axis aligned crystal parts (also referred to as pellets).
  • a combined analysis image (also referred to as a high-resolution TEM image) of a bright-field image and a diffraction pattern of a CAAC-OS, which is obtained using a transmission electron microscope (TEM)
  • TEM transmission electron microscope
  • a boundary between pellets, that is, a grain boundary is not clearly observed.
  • a reduction in electron mobility due to the grain boundary is less likely to occur.
  • FIG. 18A shows a high-resolution TEM image of a cross section of the CAAC-OS which is observed from a direction substantially parallel to the sample surface.
  • the high-resolution TEM image is obtained with a spherical aberration corrector function.
  • the high-resolution TEM image obtained with a spherical aberration corrector function is particularly referred to as a Cs-corrected high-resolution TEM image.
  • the Cs-corrected high-resolution TEM image can be obtained with, for example, an atomic resolution analytical electron microscope JEM-ARM200F manufactured by JEOL Ltd.
  • FIG. 18B is an enlarged Cs-corrected high-resolution TEM image of a region (1) in FIG. 18A .
  • FIG. 18B shows that metal atoms are arranged in a layered manner in a pellet.
  • Each metal atom layer has a configuration reflecting unevenness of a surface over which a CAAC-OS film is formed (hereinafter, the surface is referred to as a formation surface) or a top surface of the CAAC-OS, and is arranged parallel to the formation surface or the top surface of the CAAC-OS.
  • the CAAC-OS has a characteristic atomic arrangement.
  • the characteristic atomic arrangement is denoted by an auxiliary line in FIG. 18C .
  • FIGS. 18B and 18C prove that the size of a pellet is approximately 1 nm to 3 nm, and the size of a space caused by tilt of the pellets is approximately 0.8 nm. Therefore, the pellet can also be referred to as a nanocrystal (nc).
  • a CAAC-OS can be referred to as an oxide semiconductor including c-axis aligned nanocrystals (CANC).
  • the schematic arrangement of pellets 5100 of a CAAC-OS over a substrate 5120 is illustrated by such a structure in which bricks or blocks are stacked (see FIG. 18D ).
  • the part in which the pellets are tilted as observed in FIG. 18C corresponds to a region 5161 shown in FIG. 18D .
  • FIG. 19A shows a Cs-corrected high-resolution TEM image of a plane of the CAAC-OS observed from a direction substantially perpendicular to the sample surface.
  • FIGS. 19B , 19 C, and 19 D are enlarged Cs-corrected high-resolution TEM images of regions (1), (2), and (3) in FIG. 19A , respectively.
  • FIGS. 19B , 19 C, and 19 D indicate that metal atoms are arranged in a triangular, quadrangular, or hexagonal configuration in a pellet. However, there is no regularity of arrangement of metal atoms between different pellets.
  • a CAAC-OS analyzed by X-ray diffraction is described.
  • XRD X-ray diffraction
  • a CAAC-OS analyzed by electron diffraction is described.
  • a diffraction pattern also referred to as a selected-area transmission electron diffraction pattern
  • spots derived from the (009) plane of an InGaZnO 4 crystal are included.
  • the electron diffraction also indicates that pellets included in the CAAC-OS have c-axis alignment and that the c-axes are aligned in a direction substantially perpendicular to the formation surface or the top surface of the CAAC-OS.
  • FIG. 21B shows a diffraction pattern obtained in such a manner that an electron beam with a probe diameter of 300 nm is incident on the same sample in a direction perpendicular to the sample surface. As shown in FIG. 21B , a ring-like diffraction pattern is observed.
  • the electron diffraction also indicates that the a-axes and b-axes of the pellets included in the CAAC-OS do not have regular alignment.
  • the first ring in FIG. 21B is considered to be derived from the (010) plane, the (100) plane, and the like of the InGaZnO 4 crystal. Furthermore, it is supposed that the second ring in FIG. 21B is derived from the (110) plane and the like.
  • the CAAC-OS is an oxide semiconductor with high crystallinity. Entry of impurities, formation of defects, or the like might decrease the crystallinity of an oxide semiconductor. This means that the CAAC-OS has small amounts of impurities and defects (e.g., oxygen vacancies).
  • the impurity means an element other than the main components of the oxide semiconductor, such as hydrogen, carbon, silicon, or a transition metal element.
  • an element specifically, silicon or the like
  • a heavy metal such as iron or nickel, argon, carbon dioxide, or the like has a large atomic radius (or molecular radius), and thus disturbs the atomic arrangement of the oxide semiconductor and decreases crystallinity.
  • an oxide semiconductor having impurities or defects might be changed by light, heat, or the like.
  • Impurities contained in the oxide semiconductor might serve as carrier traps or carrier generation sources, for example.
  • an oxygen vacancy in the oxide semiconductor serves as a carrier trap or serves as a carrier generation source when hydrogen is captured therein.
  • the CAAC-OS having small numbers of impurities and oxygen vacancies is an oxide semiconductor film with low carrier density (specifically, lower than 8 ⁇ 10 11 /cm 3 , preferably lower than 1 ⁇ 10 11 /cm 3 , or further preferably lower than 1 ⁇ 10 10 /cm 3 , and is higher than or equal to 1 ⁇ 10 ⁇ 9 /cm 3 ).
  • Such an oxide semiconductor is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
  • a CAAC-OS has a low impurity concentration and a low density of defect states.
  • the CAAC-OS can be referred to as an oxide semiconductor having stable characteristics.
  • An nc-OS has a region in which a crystal part is observed and a region in which a crystal part is not clearly observed in a high-resolution TEM image.
  • the size of a crystal part included in the nc-OS is greater than or equal to 1 nm and less than or equal to 10 nm, or greater than or equal to 1 nm and less than or equal to 3 nm.
  • an oxide semiconductor including a crystal part whose size is greater than 10 nm and less than or equal to 100 nm is sometimes referred to as a microcrystalline oxide semiconductor.
  • a grain boundary is not clearly observed in some cases.
  • a crystal part of the nc-OS may be referred to as a pellet in the following description.
  • nc-OS In the nc-OS, a microscopic region (e.g., a region with a size greater than or equal to 1 nm and less than or equal to 10 nm, in particular, a region with a size greater than or equal to 1 nm and less than or equal to 3 nm) has a periodic atomic arrangement. There is no regularity of crystal orientation between different pellets in the nc-OS. Thus, the orientation of the whole film is not observed. Accordingly, the nc-OS cannot be distinguished from an a-like OS and an amorphous oxide semiconductor, depending on an analysis method.
  • nc-OS when the nc-OS is analyzed by an out-of-plane method using an X-ray beam having a diameter larger than the size of a pellet, a peak which shows a crystal plane does not appear. Furthermore, a diffraction pattern like a halo pattern is observed when the nc-OS is subjected to electron diffraction using an electron beam with a probe diameter (e.g., 50 nm or larger) that is larger than the size of a pellet. Meanwhile, spots appear in a nanobeam electron diffraction pattern of the nc-OS when an electron beam having a probe diameter close to or smaller than the size of a pellet is applied.
  • a probe diameter e.g. 50 nm or larger
  • a nanobeam electron diffraction pattern of the nc-OS regions with high luminance in a circular (ring) pattern are shown in some cases. Also in a nanobeam electron diffraction pattern of the nc-OS layer, a plurality of spots is shown in a ring-like region in some cases.
  • the nc-OS can also be referred to as an oxide semiconductor including random aligned nanocrystals (RANC) or an oxide semiconductor including non-aligned nanocrystals (NANC).
  • RNC random aligned nanocrystals
  • NANC non-aligned nanocrystals
  • the nc-OS is an oxide semiconductor that has high regularity as compared with an amorphous oxide semiconductor. Therefore, the nc-OS is likely to have a lower density of defect states than an a-like OS and an amorphous oxide semiconductor. Note that there is no regularity of crystal orientation between different pellets in the nc-OS. Therefore, the nc-OS has a higher density of defect states than the CAAC-OS.
  • An a-like OS has a structure intermediate between those of the nc-OS and the amorphous oxide semiconductor.
  • a void may be observed. Furthermore, in the high-resolution TEM image, there are a region where a crystal part is clearly observed and a region where a crystal part is not observed.
  • the a-like OS has an unstable structure because it includes a void.
  • an a-like OS has an unstable structure as compared with a CAAC-OS and an nc-OS, a change in structure caused by electron irradiation is described below.
  • An a-like OS (sample A), an nc-OS (sample B), and a CAAC-OS (sample C) are prepared as samples subjected to electron irradiation.
  • Each of the samples is an In—Ga—Zn oxide.
  • a unit cell of the InGaZnO 4 crystal has a structure in which nine layers including three In—O layers and six Ga—Zn—O layers are stacked in the c-axis direction.
  • the distance between the adjacent layers is equivalent to the lattice spacing on the (009) plane (also referred to as d value).
  • the value is calculated to be 0.29 nm from crystal structural analysis. Accordingly, a portion where the lattice spacing between lattice fringes is greater than or equal to 0.28 nm and less than or equal to 0.30 nm is regarded as a crystal part of InGaZnO 4 .
  • Each of lattice fringes corresponds to the a-b plane of the InGaZnO 4 crystal.
  • FIG. 33 shows change in the average size of crystal parts (at 22 points to 45 points) in each sample. Note that the crystal part size corresponds to the length of a lattice fringe. FIG. 33 indicates that the crystal part size in the a-like OS increases with an increase in the cumulative electron dose. Specifically, as shown by (1) in FIG. 33 , a crystal part of approximately 1.2 nm at the start of TEM observation (the crystal part is also referred to as an initial nucleus) grows to a size of approximately 2.6 nm at a cumulative electron dose of 4.2 ⁇ 10 8 e ⁇ /nm 2 .
  • the crystal part size in the nc-OS and the CAAC-OS shows little change from the start of electron irradiation to a cumulative electron dose of 4.2 ⁇ 10 8 e ⁇ /nm 2 .
  • the average crystal sizes in an nc-OS and a CAAC-OS are approximately 1.4 nm and approximately 2.1 nm, respectively, regardless of the cumulative electron dose.
  • the a-like OS has an unstable structure as compared with the nc-OS and the CAAC-OS.
  • the a-like OS has a lower density than the nc-OS and the CAAC-OS because it includes a void.
  • the density of the a-like OS is higher than or equal to 78.6% and lower than 92.3% of the density of the single crystal oxide semiconductor having the same composition.
  • the density of each of the nc-OS and the CAAC-OS is higher than or equal to 92.3% and lower than 100% of the density of the single crystal oxide semiconductor having the same composition. Note that it is difficult to deposit an oxide semiconductor having a density of lower than 78% of the density of the single crystal oxide semiconductor.
  • the density of each of the nc-OS and the CAAC-OS is higher than or equal to 5.9 g/cm 3 and lower than 6.3 g/cm 3 .
  • the density of a single crystal oxide semiconductor having the desired composition can be calculated using a weighted average according to the combination ratio of the single crystal oxide semiconductors with different compositions. Note that it is preferable to use as few kinds of single crystal oxide semiconductors as possible to calculate the density.
  • oxide semiconductors have various structures and various properties.
  • an oxide semiconductor may be a stacked layer including two or more of an amorphous oxide semiconductor, an a-like OS, an nc-OS, and a CAAC-OS, for example.
  • FIG. 22 an example of a display device that includes any of the transistors described in the embodiment above will be described below with reference to FIG. 22 , FIG. 23 , and FIG. 24 .
  • FIG. 22 is a top view of an example of a display device.
  • a display device 700 illustrated in FIG. 22 includes a pixel portion 702 provided over a first substrate 701 ; a source driver circuit portion 704 and a gate driver circuit portion 706 provided over the first substrate 701 ; a sealant 712 provided to surround the pixel portion 702 , the source driver circuit portion 704 , and the gate driver circuit portion 706 ; and a second substrate 705 provided to face the first substrate 701 .
  • the first substrate 701 and the second substrate 705 are sealed with the sealant 712 .
  • the pixel portion 702 , the source driver circuit portion 704 , and the gate driver circuit portion 706 are sealed with the first substrate 701 , the sealant 712 , and the second substrate 705 .
  • a display element is provided between the first substrate 701 and the second substrate 705 .
  • a flexible printed circuit (FPC) terminal portion 708 electrically connected to the pixel portion 702 , the source driver circuit portion 704 , and the gate driver circuit portion 706 is provided in a region different from the region which is surrounded by the sealant 712 and positioned over the first substrate 701 .
  • an FPC 716 is connected to the FPC terminal portion 708 , and a variety of signals and the like are supplied to the pixel portion 702 , the source driver circuit portion 704 , and the gate driver circuit portion 706 through the FPC 716 .
  • a signal line 710 is connected to the pixel portion 702 , the source driver circuit portion 704 , the gate driver circuit portion 706 , and the FPC terminal portion 708 .
  • Various signals and the like are applied to the pixel portion 702 , the source driver circuit portion 704 , the gate driver circuit portion 706 , and the FPC terminal portion 708 via the signal line 710 from the FPC 716 .
  • a plurality of gate driver circuit portions 706 may be provided in the display device 700 .
  • An example of the display device 700 in which the source driver circuit portion 704 and the gate driver circuit portion 706 are formed over the first substrate 701 where the pixel portion 702 is also formed is described; however, the structure is not limited thereto.
  • only the gate driver circuit portion 706 may be formed over the first substrate 701 or only the source driver circuit portion 704 may be formed over the first substrate 701 .
  • a substrate where a source driver circuit, a gate driver circuit, or the like is formed e.g., a driver-circuit substrate formed using a single-crystal semiconductor film or a polycrystalline semiconductor film
  • a substrate where a source driver circuit, a gate driver circuit, or the like may be mounted on the first substrate 701 .
  • a driver-circuit substrate formed using a single-crystal semiconductor film or a polycrystalline semiconductor film may be mounted on the first substrate 701 .
  • COG chip on glass
  • the pixel portion 702 , the source driver circuit portion 704 , and the gate driver circuit portion 706 included in the display device 700 include a wiring portion or a plurality of transistors.
  • the wiring portion or the plurality of transistors any of the semiconductor devices of embodiments of the present invention can be used.
  • the display device 700 can include any of a variety of elements.
  • the element includes, for example, at least one of a liquid crystal element, an electroluminescence (EL) element (e.g., an EL element including organic and inorganic materials, an organic EL element, or an inorganic EL element), an LED (e.g., a white LED, a red LED, a green LED, or a blue LED), a transistor (a transistor that emits light depending on current), an electron emitter, electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using micro electro mechanical system (MEMS), a digital micromirror device (DMD), a digital micro shutter (DMS), MIRASOL (registered trademark), an interferometric modulator display (IMOD) element, a MEMS shutter display element, an optical-interference-type MEMS display element, an electrowetting element, a piezoelectric ceramic display, and a display element including a
  • display media whose contrast, luminance, reflectivity, transmittance, or the like is changed by an electrical or magnetic effect may be included.
  • Examples of display devices having EL elements include an EL display.
  • Examples of display devices including electron emitters include a field emission display (FED) and an SED-type flat panel display (SED: surface-conduction electron-emitter display).
  • Examples of display devices including liquid crystal elements include a liquid crystal display (e.g., a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, a direct-view liquid crystal display, or a projection liquid crystal display).
  • An example of a display device including electronic ink or electrophoretic elements is electronic paper.
  • some of or all of pixel electrodes function as reflective electrodes.
  • some or all of pixel electrodes are formed to include aluminum, silver, or the like.
  • a memory circuit such as an SRAM can be provided under the reflective electrodes, leading to lower power consumption.
  • a progressive method, an interlace method, or the like can be employed.
  • color elements controlled in a pixel at the time of color display are not limited to three colors: R, G, and B (R, G, and B correspond to red, green, and blue, respectively).
  • R, G, and B correspond to red, green, and blue, respectively.
  • four pixels of the R pixel, the G pixel, the B pixel, and a W (white) pixel may be included.
  • a color element may be composed of two colors among R, G, and B as in PenTile layout. The two colors may differ among color elements.
  • one or more colors of yellow, cyan, magenta, and the like may be added to RGB.
  • the size of a display region may be different depending on respective dots of the color components.
  • Embodiments of the disclosed invention are not limited to a display device for color display; the disclosed invention can also be applied to a display device for monochrome display.
  • a coloring layer (also referred to as a color filter) may be used in order to obtain a full-color display device in which white light (W) for a backlight (e.g., an organic EL element, an inorganic EL element, an LED, or a fluorescent lamp) is used.
  • white light (W) for a backlight e.g., an organic EL element, an inorganic EL element, an LED, or a fluorescent lamp
  • red (R), green (G), blue (B), yellow (Y), or the like may be combined as appropriate, for example.
  • RGB red
  • B blue
  • Y yellow
  • white light in the region without the coloring layer may be directly utilized for display.
  • FIG. 23 is a cross-sectional view taken along the dashed-dotted line Q-R in FIG. 22 and shows a structure including a liquid crystal element as a display element
  • FIG. 24 is a cross-sectional view taken along the dashed-dotted line Q-R in FIG. 22 and shows a structure including an EL element as a display element.
  • FIG. 23 and FIG. 24 Common portions between FIG. 23 and FIG. 24 are described first, and then different portions are described.
  • the display device 700 illustrated in FIG. 23 and FIG. 24 include a lead wiring portion 711 , the pixel portion 702 , the source driver circuit portion 704 , and the FPC terminal portion 708 .
  • the lead wiring portion 711 includes a signal line 710 .
  • the pixel portion 702 includes a transistor 750 and a capacitor 790 (a capacitor 790 a or 790 b ).
  • the source driver circuit portion 704 includes a transistor 752 .
  • the semiconductor device in FIGS. 1A and 1B or FIGS. 2A and 2B can be used for the lead wiring portion 711 . Note that in FIG. 23 and FIG. 24 , only the signal line 710 is illustrated to avoid complexity.
  • the signal line 710 is formed in the same process as conductive films functioning as a source electrode and a drain electrode of the transistor 750 or 752 .
  • the signal line 710 may be formed using a conductive film which is formed in a different process as a source electrode and a drain electrode of the transistor 750 or 752 , for example, a conductive film functioning as a gate electrode may be used.
  • the signal line 710 is formed using a material including a copper element, signal delay or the like due to wiring resistance is reduced, which enables display on a large screen.
  • any of the transistors described above can be used as the transistors 750 and 752 .
  • the transistors used in this embodiment each include an oxide semiconductor film which is highly purified and which suppresses formation of an oxygen vacancy.
  • the current in an off state (off-state current) can be made small. Accordingly, an electrical signal such as an image signal can be held for a longer period, and a writing interval can be set longer in an on state. Accordingly, frequency of refresh operation can be reduced, which leads to an effect of suppressing power consumption.
  • the transistor used in this embodiment can have relatively high field-effect mobility and thus is capable of high speed operation.
  • a switching transistor in a pixel portion and a driver transistor in a driver circuit portion can be formed over one substrate. That is, a semiconductor device formed using a silicon wafer or the like is not additionally needed as a driver circuit, by which the number of components of the semiconductor device can be reduced.
  • the transistor which can operate at high speed can be used also in the pixel portion, whereby a high-quality image can be provided.
  • the FPC terminal portion 708 includes a connection electrode 760 , an anisotropic conductive film 780 , and the FPC 716 .
  • the connection electrode 760 is formed in the same process as conductive films functioning as a source electrode and a drain electrode of the transistor 750 or 752 .
  • the connection electrode 760 is electrically connected to a terminal included in the FPC 716 through the anisotropic conductive film 780 .
  • a glass substrate can be used as the first substrate 701 and the second substrate 705 .
  • a flexible substrate may be used as the first substrate 701 and the second substrate 705 .
  • the flexible substrate include a plastic substrate.
  • a light-blocking film 738 functioning as a black matrix, a coloring film 736 functioning as a color filter, and an insulating film 734 in contact with the light-blocking film 738 and the coloring film 736 are provided on the second substrate 705 side.
  • a structure body 778 is provided between the first substrate 701 and the second substrate 705 .
  • the structure body 778 is a columnar spacer obtained by selective etching of an insulating film and provided to control the distance (cell gap) between the first substrate 701 and the second substrate 705 .
  • a spherical spacer may be used as the structure body 778 .
  • FIG. 23 the structure in which the structure body 778 is provided on the second substrate 705 side is illustrated in FIG. 23 as an example, one embodiment of the present invention is not limited thereto.
  • a structure in which the structure body 778 is provided on the first substrate 701 side as illustrated in FIG. 24 or a structure in which both of the first substrate 701 and the second substrate 705 are provided with the structure body 778 may be employed.
  • insulating films 764 , 766 , 768 , and 769 are formed over the transistor 750 , the transistor 752 , and the capacitor 790 .
  • the insulating films 764 , 766 , 768 , and 769 can be formed using materials and methods similar to those of the insulating films 114 , 116 , 118 , and 122 described in the above embodiment, respectively.
  • the display device 700 illustrated in FIG. 23 includes the capacitor 790 a .
  • the capacitor 790 a includes a dielectric between a pair of electrodes. Specifically, an oxide semiconductor film with high conductivity which is formed using steps of forming the same oxide semiconductor film as the oxide semiconductor film functioning as a semiconductor layer of the transistor 750 is used as one electrode of the capacitor 790 a , and a conductive film 772 electrically connected to the transistor 750 is used as the other electrode of the capacitor 790 a.
  • oxide semiconductor film with high conductivity which functions as one electrode of the capacitor 790 a is described below.
  • oxide semiconductors When hydrogen is added to an oxide semiconductor including oxygen vacancies, hydrogen enters oxygen vacant sites and forms a donor level in the vicinity of the conduction band. As a result, the conductivity of the oxide semiconductor is increased, so that the oxide semiconductor becomes a conductor.
  • An oxide semiconductor having become a conductor can be referred to as an oxide conductor.
  • Oxide semiconductors generally have a visible light-transmitting property because of their large energy gap.
  • An oxide conductor is an oxide semiconductor having a donor level in the vicinity of the conduction band. Therefore, the influence of absorption due to the donor level is small, and an oxide conductor has a visible light-transmitting property comparable to that of an oxide semiconductor.
  • the temperature dependence of resistivity of a film formed with an oxide semiconductor hereinafter referred to as an oxide semiconductor film (OS)
  • an oxide conductor film hereinafter referred to as an oxide conductor film (OC)
  • FIG. 28 the horizontal axis represents measurement temperature
  • the vertical axis represents resistivity. Measurement results of the oxide semiconductor film (OS) are plotted as circles, and measurement results of the oxide conductor film (OC) are plotted as squares.
  • the temperature dependence of resistivity of the oxide conductor film (OC) is lower than the temperature dependence of resistivity of the oxide semiconductor film (OS).
  • the range of variation of resistivity of the oxide conductor film (OC) at temperatures from 80 K to 290 K is from more than ⁇ 20% to less than +20%.
  • the range of variation of resistivity at temperatures from 150 K to 250 K is from more than ⁇ 10% to less than +10%.
  • the oxide conductor is a degenerate semiconductor and it is suggested that the conduction band edge agrees with or substantially agrees with the Fermi level. Therefore, the oxide conductor film can be used as one electrode of the capacitor 790 a.
  • the display device 700 illustrated in FIG. 23 includes a liquid crystal element 775 .
  • the liquid crystal element 775 includes the conductive film 772 , a conductive film 774 , and a liquid crystal layer 776 .
  • the conductive film 774 is provided on the second substrate 705 side and functions as a counter electrode.
  • the display device 700 in FIG. 23 is capable of displaying an image in such a manner that transmission or non-transmission is controlled by change in the alignment state of the liquid crystal layer 776 depending on a voltage applied to the conductive film 772 and the conductive film 774 .
  • the conductive film 772 is connected to the conductive films functioning as a source electrode and a drain electrode of the transistor 750 .
  • the conductive film 772 is formed over the insulating film 768 to function as a pixel electrode, i.e., one electrode of the display element.
  • the conductive film 772 can be formed using a material and a method similar to those of the conductive films 120 , 120 a , and 120 b described in the above embodiment.
  • an alignment film may be provided on a side of the conductive film 772 in contact with the liquid crystal layer 776 and on a side of the conductive film 774 in contact with the liquid crystal layer 776 .
  • an optical member an optical substrate
  • polarizing member a retardation member
  • anti-reflection member may be provided as appropriate.
  • circular polarization may be employed by using a polarizing substrate and a retardation substrate.
  • a backlight, a sidelight, or the like may be used as a light source.
  • thermotropic liquid crystal a low-molecular liquid crystal, a high-molecular liquid crystal, a polymer-dispersed liquid crystal, a ferroelectric liquid crystal, an anti-ferroelectric liquid crystal, or the like
  • a liquid crystal material exhibits a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like depending on conditions.
  • a liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used.
  • a blue phase is one of liquid crystal phases, which is generated just before a cholesteric phase changes into an isotropic phase while temperature of cholesteric liquid crystal is increased. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition in which several weight percent or more of a chiral material is mixed is used for the liquid crystal layer in order to improve the temperature range.
  • the liquid crystal composition which includes liquid crystal exhibiting a blue phase and a chiral material has a short response time and optical isotropy, which makes the alignment process unneeded.
  • liquid crystal composition which includes liquid crystal exhibiting a blue phase and a chiral material has a small viewing angle dependence.
  • An alignment film does not need to be provided and rubbing treatment is thus not necessary; accordingly, electrostatic discharge damage caused by the rubbing treatment can be prevented and defects and damage of the liquid crystal display device in the manufacturing process can be reduced.
  • a liquid crystal element In the case where a liquid crystal element is used as the display element, a twisted nematic (TN) mode, an in-plane-switching (IPS) mode, a fringe field switching (FFS) mode, an axially symmetric aligned micro-cell (ASM) mode, an optical compensated birefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, or the like can be used.
  • TN twisted nematic
  • IPS in-plane-switching
  • FFS fringe field switching
  • ASM axially symmetric aligned micro-cell
  • OBC optical compensated birefringence
  • FLC ferroelectric liquid crystal
  • AFLC antiferroelectric liquid crystal
  • a normally black liquid crystal display device such as a transmissive liquid crystal display device utilizing a vertical alignment (VA) mode may also be used.
  • VA vertical alignment
  • a vertical alignment mode for example, a multi-domain vertical alignment (MVA) mode, a patterned vertical alignment (PVA) mode, an ASV mode, or the like can be employed.
  • MVA multi-domain vertical alignment
  • PVA patterned vertical alignment
  • ASV ASV mode
  • the display device 700 illustrated in FIG. 24 includes the capacitor 790 b .
  • the capacitor 790 b includes a dielectric between a pair of electrodes. Specifically, a conductive film which is formed using steps of forming the same conductive film as the conductive film functioning as a gate electrode of the transistor 750 is used as one electrode of the capacitor 790 b , and a conductive film functioning as a source electrode or a drain electrode of the transistor 750 is used as the other electrode of the capacitor 790 b . Furthermore, an insulating film functioning as a gate insulating film of the transistor 750 is used as the dielectric between the pair of electrodes.
  • a planarization insulating film 770 is formed over the insulating film 769 .
  • the planarization insulating film 770 can be formed using a heat-resistant organic material, such as a polyimide resin, an acrylic resin, a polyimide amide resin, a benzocyclobutene resin, a polyamide resin, or an epoxy resin. Note that the planarization insulating film 770 may be formed by stacking a plurality of insulating films formed from these materials. Alternatively, a structure without the planarization insulating film 770 as illustrated in FIG. 23 may be employed.
  • a heat-resistant organic material such as a polyimide resin, an acrylic resin, a polyimide amide resin, a benzocyclobutene resin, a polyamide resin, or an epoxy resin.
  • the display device 700 illustrated in FIG. 24 includes a light-emitting element 782 .
  • the light-emitting element 782 includes a conductive film 784 , an EL layer 786 , and a conductive film 788 .
  • the display device 700 illustrated in FIG. 24 is capable of displaying an image by light emission from the EL layer 786 of the light-emitting element 782 .
  • the conductive film 784 is connected to the conductive films functioning as a source electrode and a drain electrode of the transistor 750 .
  • the conductive film 784 is formed over the planarization insulating film 770 to function as a pixel electrode, i.e., one electrode of the display element.
  • a conductive film which transmits visible light or a conductive film which reflects visible light can be used for the conductive film 784 .
  • the conductive film which transmits visible light can be formed using a material including one kind selected from indium (In), zinc (Zn), and tin (Sn), for example.
  • the conductive film which reflects visible light can be formed using a material including aluminum or silver, for example.
  • an insulating film 730 is provided over the planarization insulating film 770 and the conductive film 784 .
  • the insulating film 730 covers part of the conductive film 784 .
  • the light-emitting element 782 has a top emission structure. Therefore, the conductive film 788 has a light-transmitting property and transmits light emitted from the EL layer 786 .
  • the top-emission structure is described as an example in this embodiment, one embodiment of the present invention is not limited thereto.
  • a bottom-emission structure in which light is emitted to the conductive film 784 side, or a dual-emission structure in which light is emitted to both the conductive film 784 side and the conductive film 788 side may be employed.
  • the coloring film 736 is provided to overlap with the light-emitting element 782 , and the light-blocking film 738 is provided to overlap with the insulating film 730 and to be included in the lead wiring portion 711 and in the source driver circuit portion 704 .
  • the coloring film 736 and the light-blocking film 738 are covered with the insulating film 734 .
  • a space between the light-emitting element 782 and the insulating film 734 is filled with a sealing film 732 .
  • a structure with the coloring film 736 is described as the structure of the display device 700 in FIG. 24 , the structure is not limited thereto. In the case where the EL layer 786 is formed so that different colors of light are emitted from different pixels, the coloring film 736 is not necessarily provided.
  • FIGS. 25A to 25C a display device that includes a semiconductor device of one embodiment of the present invention will be described with reference to FIGS. 25A to 25C .
  • the display device illustrated in FIG. 25A includes a region including pixels of display elements (hereinafter the region is referred to as a pixel portion 502 ), a circuit portion being provided outside the pixel portion 502 and including a circuit for driving the pixels (hereinafter the portion is referred to as a driver circuit portion 504 ), circuits each having a function of protecting an element (hereinafter the circuits are referred to as protection circuits 506 ), and a terminal portion 507 . Note that the protection circuits 506 are not necessarily provided.
  • Part or the whole of the driver circuit portion 504 is preferably formed over a substrate over which the pixel portion 502 is formed, in which case the number of components and the number of terminals can be reduced.
  • the part or the whole of the driver circuit portion 504 can be mounted by COG or tape automated bonding (TAB).
  • the pixel portion 502 includes a plurality of circuits for driving display elements arranged in X rows (X is a natural number of 2 or more) and Y columns (Y is a natural number of 2 or more) (hereinafter such circuits are referred to as pixel circuits 501 ).
  • the driver circuit portion 504 includes driver circuits such as a circuit for supplying a signal (scan signal) to select a pixel (hereinafter the circuit is referred to as a gate driver 504 a ) and a circuit for supplying a signal (data signal) to drive a display element in a pixel (hereinafter the circuit is referred to as a source driver 504 b ).
  • the gate driver 504 a includes a shift register or the like.
  • the gate driver 504 a receives a signal for driving the shift register through the terminal portion 507 and outputs a signal.
  • the gate driver 504 a receives a start pulse signal, a clock signal, or the like and outputs a pulse signal.
  • the gate driver 504 a has a function of controlling the potentials of wirings supplied with scan signals (hereinafter such wirings are referred to as scan lines GL_ 1 to GL_X). Note that a plurality of gate drivers 504 a may be provided to control the scan lines GL_ 1 to GL_X separately. Alternatively, the gate driver 504 a has a function of supplying an initialization signal. Without being limited thereto, the gate driver 504 a can supply another signal.
  • the source driver 504 b includes a shift register or the like.
  • the source driver 504 b receives a signal (video signal) from which a data signal is derived, as well as a signal for driving the shift register, through the terminal portion 507 .
  • the source driver 504 b has a function of generating a data signal to be written to the pixel circuit 501 which is based on the video signal.
  • the source driver 504 b has a function of controlling output of a data signal in response to a pulse signal produced by input of a start pulse signal, a clock signal, or the like.
  • the source driver 504 b has a function of controlling the potentials of wirings supplied with data signals (hereinafter such wirings are referred to as data lines DL_ 1 to DL_Y). Alternatively, the source driver 504 b has a function of supplying an initialization signal. Without being limited thereto, the source driver 504 b can supply another signal.
  • the source driver 504 b includes a plurality of analog switches, for example.
  • the source driver 504 b can output, as the data signals, signals obtained by time-dividing the video signal by sequentially turning on the plurality of analog switches.
  • the source driver 504 b may include a shift register or the like.
  • a pulse signal and a data signal are input to each of the plurality of pixel circuits 501 through one of the plurality of scan lines GL supplied with scan signals and one of the plurality of data lines DL supplied with data signals, respectively.
  • Writing and holding of the data signal to and in each of the plurality of pixel circuits 501 are controlled by the gate driver 504 a .
  • a pulse signal is input from the gate driver 504 a through the scan line GL_m, and a data signal is input from the source driver 504 b through the data line DL_n in accordance with the potential of the scan line GL_m.
  • the protection circuit 506 in FIG. 25A is connected to, for example, the scan line GL between the gate driver 504 a and the pixel circuit 501 .
  • the protection circuit 506 is connected to the data line DL between the source driver 504 b and the pixel circuit 501 .
  • the protection circuit 506 can be connected to a wiring between the gate driver 504 a and the terminal portion 507 .
  • the protection circuit 506 can be connected to a wiring between the source driver 504 b and the terminal portion 507 .
  • the terminal portion 507 means a portion having terminals for inputting power, control signals, and video signals to the display device from external circuits.
  • the protection circuit 506 is a circuit that electrically connects a wiring connected to the protection circuit to another wiring when a potential out of a certain range is applied to the wiring connected to the protection circuit.
  • the protection circuits 506 are provided for the pixel portion 502 and the driver circuit portion 504 , so that the resistance of the display device to overcurrent generated by electrostatic discharge (ESD) or the like can be improved.
  • ESD electrostatic discharge
  • the configuration of the protection circuits 506 is not limited thereto, and for example, the protection circuit 506 may be configured to be connected to the gate driver 504 a or the protection circuit 506 may be configured to be connected to the source driver 504 b . Alternatively, the protection circuit 506 may be configured to be connected to the terminal portion 507 .
  • the driver circuit portion 504 includes the gate driver 504 a and the source driver 504 b is shown; however, the structure is not limited thereto.
  • the gate driver 504 a may be formed and a separately prepared substrate where a source driver circuit is formed (e.g., a driver circuit substrate formed with a single crystal semiconductor film or a polycrystalline semiconductor film) may be mounted.
  • Each of the plurality of pixel circuits 501 in FIG. 25A can have the structure illustrated in FIG. 25B , for example.
  • the pixel circuit 501 illustrated in FIG. 25B includes a liquid crystal element 570 , a transistor 550 , and a capacitor 560 .
  • the transistor 550 any of the transistors described in the above embodiment, for example, can be used.
  • the potential of one of a pair of electrodes of the liquid crystal element 570 is set in accordance with the specifications of the pixel circuit 501 as appropriate.
  • the alignment state of the liquid crystal element 570 depends on written data.
  • a common potential may be supplied to one of the pair of electrodes of the liquid crystal element 570 included in each of the plurality of pixel circuits 501 .
  • the potential supplied to one of the pair of electrodes of the liquid crystal element 570 in the pixel circuit 501 in one row may be different from the potential supplied to one of the pair of electrodes of the liquid crystal element 570 in the pixel circuit 501 in another row.
  • any of the following modes can be given: a TN mode, an STN mode, a VA mode, an axially symmetric aligned micro-cell (ASM) mode, an optical compensated birefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, an MVA mode, a patterned vertical alignment (PVA) mode, an IPS mode, an FFS mode, a transverse bend alignment (TBA) mode, and the like.
  • the driving method of the display device include an electrically controlled birefringence (ECB) mode, a polymer-dispersed liquid crystal (PDLC) mode, a polymer network liquid crystal (PNLC) mode, and a guest-host mode.
  • EBC electrically controlled birefringence
  • PDLC polymer-dispersed liquid crystal
  • PNLC polymer network liquid crystal
  • guest-host mode a guest-host mode.
  • one embodiment of the present invention is not limited to these examples, and various liquid crystal elements and driving methods can be applied to the liquid crystal element and the driving method thereof
  • one of a source electrode and a drain electrode of the transistor 550 is electrically connected to the data line DL_n, and the other is electrically connected to the other of the pair of electrodes of the liquid crystal element 570 .
  • a gate electrode of the transistor 550 is electrically connected to the scan line GL_m.
  • the transistor 550 has a function of controlling whether to write a data signal by being turned on or off.
  • One of a pair of electrodes of the capacitor 560 is electrically connected to a wiring to which a potential is supplied (hereinafter referred to as a potential supply line VL), and the other is electrically connected to the other of the pair of electrodes of the liquid crystal element 570 .
  • the potential of the potential supply line VL is set in accordance with the specifications of the pixel circuit 501 as appropriate.
  • the capacitor 560 functions as a storage capacitor for storing written data.
  • the pixel circuits 501 are sequentially selected row by row by the gate driver 504 a illustrated in FIG. 25A , whereby the transistors 550 are turned on and a data signal is written.
  • the transistors 550 When the transistors 550 are turned off, the pixel circuits 501 in which the data has been written are brought into a holding state. This operation is sequentially performed row by row; thus, an image can be displayed.
  • each of the plurality of pixel circuits 501 in FIG. 25A can have the structure illustrated in FIG. 25C , for example.
  • the pixel circuit 501 illustrated in FIG. 25C includes a transistor 552 , a transistor 554 , a capacitor 562 , and a light-emitting element 572 .
  • One of a source electrode and a drain electrode of the transistor 552 is electrically connected to a wiring to which a data signal is supplied (hereinafter referred to as a signal line DL_n).
  • a gate electrode of the transistor 552 is electrically connected to a wiring to which a gate signal is supplied (hereinafter referred to as a scan line GL_m).
  • the transistor 552 has a function of controlling whether to write a data signal by being turned on or off.
  • One of a pair of electrodes of the capacitor 562 is electrically connected to a wiring to which a potential is supplied (hereinafter referred to as a potential supply line VL_a), and the other is electrically connected to the other of a source electrode and a drain electrode of the transistor 552 .
  • the capacitor 562 functions as a storage capacitor for storing written data.
  • One of a source electrode and a drain electrode of the transistor 554 is electrically connected to the potential supply line VL_a. Furthermore, a gate electrode of the transistor 554 is electrically connected to the other of the source electrode and the drain electrode of the transistor 552 .
  • One of an anode and a cathode of the light-emitting element 572 is electrically connected to a potential supply line VL_b, and the other is electrically connected to the other of the source electrode and the drain electrode of the transistor 554 .
  • an organic electroluminescent element also referred to as an organic EL element
  • the light-emitting element 572 is not limited to an organic EL element; an inorganic EL element including an inorganic material may be used.
  • a high power supply potential VDD is supplied to one of the potential supply line VL_a and the potential supply line VL_b, and a low power supply potential VSS is supplied to the other.
  • the pixel circuits 501 are sequentially selected row by row by the gate driver 504 a illustrated in FIG. 25A , whereby the transistors 552 are turned on and a data signal is written.
  • the transistors 552 When the transistors 552 are turned off, the pixel circuits 501 in which the data has been written are brought into a holding state. Furthermore, the amount of current flowing between the source electrode and the drain electrode of the transistor 554 is controlled in accordance with the potential of the written data signal.
  • the light-emitting element 572 emits light with a luminance corresponding to the amount of flowing current. This operation is sequentially performed row by row; thus, an image can be displayed.
  • FIG. 26 a display module and electronic devices that include a semiconductor device of one embodiment of the present invention will be described with reference to FIG. 26 and FIGS. 27A to 27H .
  • a touch panel 8004 connected to an FPC 8003 a display panel 8006 connected to an FPC 8005 , a backlight unit 8007 , a frame 8009 , a printed board 8010 , and a battery 8011 are provided between an upper cover 8001 and a lower cover 8002 .
  • the semiconductor device of one embodiment of the present invention can be used for, for example, the display panel 8006 .
  • the shapes and sizes of the upper cover 8001 and the lower cover 8002 can be changed as appropriate in accordance with the sizes of the touch panel 8004 and the display panel 8006 .
  • the touch panel 8004 can be a resistive touch panel or a capacitive touch panel and can be formed to overlap the display panel 8006 .
  • a counter substrate (sealing substrate) of the display panel 8006 can have a touch panel function.
  • a photosensor may be provided in each pixel of the display panel 8006 to form an optical touch panel.
  • the backlight unit 8007 includes a light source 8008 .
  • a structure in which the light sources 8008 are provided over the backlight unit 8007 is illustrated in FIG. 26 , one embodiment of the present invention is not limited to this structure.
  • a structure in which the light source 8008 is provided at an end portion of the backlight unit 8007 and a light diffusion plate is further provided may be employed.
  • the backlight unit 8007 need not be provided in the case where a self-luminous light-emitting element such as an organic EL element is used or in the case where a reflective panel or the like is employed.
  • the frame 8009 protects the display panel 8006 and also functions as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed board 8010 .
  • the frame 8009 may function as a radiator plate.
  • the printed board 8010 is provided with a power supply circuit and a signal processing circuit for outputting a video signal and a clock signal.
  • a power source for supplying power to the power supply circuit an external commercial power source or a power source using the battery 8011 provided separately may be used.
  • the battery 8011 can be omitted in the case of using a commercial power source.
  • the display module 8000 may be additionally provided with a member such as a polarizing plate, a retardation plate, or a prism sheet.
  • FIGS. 27A to 27H illustrate electronic appliances. These electronic devices can include a housing 9000 , a display portion 9001 , a speaker 9003 , an LED lamp 9004 , operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006 , a sensor 9007 (a sensor having a function of measuring or sensing force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation, odor, or infrared ray), a microphone 9008 , and the like.
  • a sensor 9007 a sensor having a function of measuring or sensing force, displacement, position, speed, acceleration, angular velocity, rotational frequency, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, oscillation,
  • FIG. 27A illustrates a mobile computer that can include a switch 9009 , an infrared port 9010 , and the like in addition to the above components.
  • FIG. 27B illustrates a portable image reproducing device (e.g., a DVD player) that is provided with a memory medium and can include a second display portion 9002 , a memory medium reading portion 9011 , and the like in addition to the above components.
  • FIG. 27C illustrates a goggle-type display that can include the second display portion 9002 , a support 9012 , an earphone 9013 , and the like in addition to the above components.
  • FIG. 27D illustrates a portable game machine that can include the memory medium reading portion 9011 and the like in addition to the above components.
  • FIG. 27E illustrates a digital camera that has a television reception function and can include an antenna 9014 , a shutter button 9015 , an image receiving portion 9016 , and the like in addition to the above components.
  • FIG. 27F illustrates a portable game machine that can include the second display portion 9002 , the memory medium reading portion 9011 , and the like in addition to the above components.
  • FIG. 27G illustrates a television receiver that can include a tuner, an image processing portion, and the like in addition to the above components.
  • FIG. 27H illustrates a portable television receiver that can include a charger 9017 capable of transmitting and receiving signals, and the like in addition to the above components.
  • the electronic devices illustrated in FIGS. 27A to 27H can have a variety of functions, for example, a function of displaying a variety of data (a still image, a moving image, a text image, and the like) on the display portion, a touch panel function, a function of displaying a calendar, date, time, and the like, a function of controlling a process with a variety of software (programs), a wireless communication function, a function of being connected to a variety of computer networks with a wireless communication function, a function of transmitting and receiving a variety of data with a wireless communication function, a function of reading a program or data stored in a memory medium and displaying the program or data on the display portion, and the like.
  • a function of displaying a variety of data (a still image, a moving image, a text image, and the like) on the display portion
  • a touch panel function a function of displaying a calendar, date, time, and the like
  • the electronic device including a plurality of display portions can have a function of displaying image data mainly on one display portion while displaying text data on another display portion, a function of displaying a three-dimensional image by displaying images on a plurality of display portions with a parallax taken into account, or the like.
  • the electronic device including an image receiving portion can have a function of shooting a still image, a function of taking a moving image, a function of automatically or manually correcting a shot image, a function of storing a shot image in a memory medium (an external memory medium or a memory medium incorporated in the camera), a function of displaying a shot image on the display portion, or the like.
  • functions that can be provided for the electronic devices illustrated in FIGS. 27A to 27H are not limited to those described above, and the electronic devices can have a variety of functions.
  • the electronic devices described in this embodiment each include the display portion for displaying some sort of data.
  • the semiconductor device of one embodiment of the present invention can also be used for an electronic device that does not have a display portion.
  • evaluation results of an insulating film that can be used for the semiconductor device of one embodiment of the present invention will be described. Specifically, results of evaluating the number of ammonia molecules released by heating will be described.
  • the fabricated samples are a sample A 1 , a sample A 2 , and a sample A 3 .
  • the sample A 1 is a sample for comparison
  • the samples A 2 and A 3 are each a sample of one embodiment of the present invention.
  • a 100-nm-thick silicon nitride film was formed over a glass substrate with a PECVD apparatus.
  • the substrate temperature was 350° C.
  • silane with a flow rate of 50 sccm, nitrogen with a flow rate of 5000 sccm, and ammonia with a flow rate of 100 sccm were used as a source gas
  • the pressure in a treatment chamber was 100 Pa
  • high-frequency power of 1000 W the power density of 1.6 ⁇ 10 ⁇ 1 W/cm 2 ) at 27.12 MHz was supplied to parallel-plate electrodes.
  • a 100-nm-thick silicon nitride film was formed over a glass substrate with a PECVD apparatus.
  • the substrate temperature was 350° C.
  • silane with a flow rate of 200 sccm, nitrogen with a flow rate of 2000 sccm, and ammonia with a flow rate of 100 sccm were used as a source gas
  • the pressure in a treatment chamber was 100 Pa
  • high-frequency power of 2000 W the power density of 3.2 ⁇ 10 ⁇ 1 W/cm 2
  • a 100-nm-thick silicon nitride film was formed over a glass substrate with a PECVD apparatus.
  • the substrate temperature was 350° C.; silane with a flow rate of 200 sccm and nitrogen with a flow rate of 5000 sccm were used as a source gas; the pressure in a treatment chamber was 100 Pa; and high-frequency power of 2000 W (the power density of 3.2 ⁇ 10 ⁇ 1 W/cm 2 ) at 27.12 MHz was supplied to parallel-plate electrodes.
  • TDS thermal desorption spectroscopy
  • the peaks of the curves shown in the results obtained from TDS appear due to release of atoms or molecules contained in the analyzed samples (in this example, the samples A 1 to A 3 ) to the outside.
  • the total number of the atoms or molecules released to the outside corresponds to the integral value of the peak.
  • the degree of the peak intensity the number of the atoms or molecules contained in the silicon nitride film can be evaluated.
  • FIG. 29 shows the results of the TDS analyses on the samples A 1 to A 3 .
  • FIG. 29 is a graph showing the numbers of ammonia molecules released in the samples. The ammonia molecules were calculated from the integral values of curve peaks that showed the amount of a released gas which had a M/z of 17, typically ammonia molecules, which was observed in TDS analysis.
  • the number of ammonia molecules released in the sample A 1 was 3.8 ⁇ 10 15 molecules/cm 3
  • that in the sample A 2 was 5.2 ⁇ 10 13 molecules/cm 3
  • that in the sample A 3 was 7.6 ⁇ 10 13 molecules/cm 3 .
  • evaluation results of conductive films and insulating films that can be used for the semiconductor device of one embodiment of the present invention will be described. Observation results of the conductive films and the insulating films with the optical microscope will be described in detail.
  • the fabricated samples are a sample B 1 , a sample B 2 , and a sample B 3 .
  • the sample B 1 is a sample for comparison
  • the sample B 2 is a sample of one embodiment of the present invention
  • the sample B 3 is a sample for comparison.
  • FIG. 30 is a top view common to the samples B 1 to B 3 . Description will be given below with reference to FIG. 30 .
  • a first conductive film 802 was formed over a glass substrate.
  • the first conductive film 802 had a stacked-layer structure of three layers of a 50-nm-thick tungsten film, a 400-nm-thick aluminum film, and a 100-nm-thick titanium film. Note that the first conductive film 802 was formed with a sputtering apparatus. Then, a mask was formed over the first conductive film 802 by a lithography process and then processed with a dry etching apparatus, and the first conductive film 802 was processed into desired shapes (first conductive films 802 a and 802 b in FIG. 30 ).
  • the first insulating film had a stacked-layer structure of two layers of a 50-nm-thick first silicon oxynitride film and a 400-nm-thick second silicon oxynitride film.
  • the substrate temperature was 220° C.; silane with a flow rate of 50 sccm and dinitrogen monoxide with a flow rate of 2000 sccm were used as a source gas; the pressure in a treatment chamber was 20 Pa; and high-frequency power of 100 W (the power density of 1.6 ⁇ 10 ⁇ 2 W/cm 2 ) at 13.56 MHz was supplied to parallel-plate electrodes.
  • the substrate temperature was 220° C.; silane with a flow rate of 160 sccm and dinitrogen monoxide with a flow rate of 2000 sccm were used as a source gas; the pressure in a treatment chamber was 200 Pa; and high-frequency power of 1500 W (the power density of 2.4 ⁇ 10 ⁇ 1 W/cm 2 ) at 13.56 MHz was supplied to parallel-plate electrodes.
  • heat treatment was performed at 350° C. in a mixed gas atmosphere of a nitrogen gas and an oxygen gas for 1 hour.
  • an opening 806 was formed in the first insulating film.
  • the opening 806 was formed to reach the first conductive films 802 a and 802 b . Note that a plurality of openings 806 (four openings 806 in FIG. 30 ) were formed.
  • a second conductive film 804 was formed over the first insulating film so as to cover the openings 806 .
  • a 100-nm-thick indium tin oxide film to which silicon oxide was added was formed.
  • the second conductive film 804 had a comb-like electrode shape as illustrated in FIG. 30 .
  • L/W was set to 24436.55 mm/5 ⁇ m.
  • the two-dot chain line is an ellipsis indicating that the second conductive film 804 is not fully illustrated in the L length direction.
  • One end of the comb-like electrode was electrically connected to the first conductive film 802 a and the other end of the comb-like electrode was electrically connected to the first conductive film 802 b.
  • a third insulating film was formed over the second conductive film 804 .
  • the third insulating film was formed under the same conditions as the silicon nitride film of the sample A 1 described in the above example.
  • a first conductive film 802 (first conductive films 802 a and 802 b ), a first insulating film over the first conductive film 802 (first conductive films 802 a and 802 b ), and a second conductive film 804 over the first insulating film were formed over a glass substrate.
  • the first conductive film 802 (first conductive films 802 a and 802 b ), the first insulating film, and the second conductive film 804 were formed under the same conditions as the sample B 1 described above using the same material.
  • a third insulating film was formed over the second conductive film.
  • the third insulating film was formed under the same conditions as the silicon nitride film of the sample A 3 described in the above example.
  • the first conductive film 802 (first conductive films 802 a and 802 b ), the first insulating film over the first conductive film 802 (first conductive films 802 a and 802 b ), and the second conductive film 804 over the first insulating film were formed over a glass substrate.
  • the first conductive film 802 (first conductive films 802 a and 802 b ), the first insulating film, and the second conductive film 804 were formed under the same conditions as the sample B 1 described above using the same material.
  • the third insulating film is not formed over the second conductive film 804 .
  • FIGS. 31A and 31B show the appearance of the sample B 1 and the appearance of the sample B 2 , respectively, which were observed with an optical microscope. Note that FIG. 31A shows the result of the sample B 1 , and FIG. 31B shows the result of the sample B 2 .
  • the silicon nitride film used as the third insulating film in the sample B 1 is an insulating film which releases ammonia molecules in excess of 1 ⁇ 10 15 molecules/cm 3 as described in Example 1
  • the silicon nitride film used as the third insulating film in the sample B 2 is an insulating film which releases ammonia molecules of less than or equal to 1 ⁇ 10 15 molecules/cm 3 as described in Example 1.
  • FIGS. 31A and 31B there was no defect in appearance because the third insulating film was not formed in the sample B 3 . Therefore, it is indicated that the second conductive film 804 is altered when a number of ammonia molecules are released from the third insulating film.
  • a stress test under high temperature and high humidity was performed on the samples B 2 and B 3 fabricated as described above.
  • the temperature and humidity of the evaluation environment were 60° C. and 95%, respectively.
  • a voltage of 15 V was applied to the first conductive films 802 a and 802 b and the second conductive film 804 for 12 hours.
  • voltage was applied from the outside in such a manner that 15 V was applied to the first conductive film 802 a in FIG. 30 and the first conductive film 802 b was fixed to the 0 V.
  • FIGS. 32A and 32B show the appearance of the sample B 2 and the appearance of the sample B 3 , respectively, which were observed with an optical microscope. Note that FIG. 32A shows the result of the sample B 2 , and FIG. 32B shows the result of the sample B 3 .
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JP2015195372A (ja) 2015-11-05
TW201539559A (zh) 2015-10-16
JP6868059B2 (ja) 2021-05-12
JP2019197897A (ja) 2019-11-14
TWI657488B (zh) 2019-04-21
US20180374957A1 (en) 2018-12-27

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