US20120231264A1 - Wire wrap compositions and methods relating thereto - Google Patents
Wire wrap compositions and methods relating thereto Download PDFInfo
- Publication number
- US20120231264A1 US20120231264A1 US13/510,662 US201013510662A US2012231264A1 US 20120231264 A1 US20120231264 A1 US 20120231264A1 US 201013510662 A US201013510662 A US 201013510662A US 2012231264 A1 US2012231264 A1 US 2012231264A1
- Authority
- US
- United States
- Prior art keywords
- polyimide
- dianhydride
- layer
- wire wrap
- accordance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 67
- 238000010618 wire wrap Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title description 43
- 229920001721 polyimide Polymers 0.000 claims abstract description 179
- 239000004642 Polyimide Substances 0.000 claims abstract description 162
- 239000000945 filler Substances 0.000 claims abstract description 120
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 76
- 150000004985 diamines Chemical class 0.000 claims abstract description 55
- 125000003118 aryl group Chemical group 0.000 claims abstract description 16
- 150000004984 aromatic diamines Chemical class 0.000 claims abstract description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 160
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 claims description 147
- 239000000454 talc Substances 0.000 claims description 57
- 229910052623 talc Inorganic materials 0.000 claims description 57
- 229920001400 block copolymer Polymers 0.000 claims description 35
- -1 alkyl vinyl ether Chemical compound 0.000 claims description 28
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 claims description 27
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical group C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 claims description 22
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 claims description 14
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 11
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 229910052593 corundum Inorganic materials 0.000 claims description 10
- 239000007822 coupling agent Substances 0.000 claims description 10
- 229920005604 random copolymer Polymers 0.000 claims description 10
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 10
- 239000000835 fiber Substances 0.000 claims description 9
- 241000276425 Xiphophorus maculatus Species 0.000 claims description 8
- 239000004408 titanium dioxide Substances 0.000 claims description 8
- 239000002270 dispersing agent Substances 0.000 claims description 6
- 229910003465 moissanite Inorganic materials 0.000 claims description 6
- 125000006160 pyromellitic dianhydride group Chemical group 0.000 claims description 5
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 151
- 230000000052 comparative effect Effects 0.000 description 106
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 49
- 239000000243 solution Substances 0.000 description 45
- 239000000178 monomer Substances 0.000 description 41
- 229920005575 poly(amic acid) Polymers 0.000 description 35
- 239000002002 slurry Substances 0.000 description 33
- 238000003860 storage Methods 0.000 description 25
- 238000001914 filtration Methods 0.000 description 24
- 238000005266 casting Methods 0.000 description 23
- 238000011068 loading method Methods 0.000 description 23
- 229920000642 polymer Polymers 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 18
- 238000001723 curing Methods 0.000 description 18
- 239000002904 solvent Substances 0.000 description 18
- 238000009472 formulation Methods 0.000 description 16
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 14
- 238000007792 addition Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000006116 polymerization reaction Methods 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000012792 core layer Substances 0.000 description 4
- 125000006159 dianhydride group Chemical group 0.000 description 4
- 229920002313 fluoropolymer Polymers 0.000 description 4
- 239000004811 fluoropolymer Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000001029 thermal curing Methods 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 2
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 2
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical class OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000005457 ice water Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-methyl-PhOH Natural products CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-methyl phenol Natural products CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- DBGSRZSKGVSXRK-UHFFFAOYSA-N 1-[2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]acetyl]-3,6-dihydro-2H-pyridine-4-carboxylic acid Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CCC(=CC1)C(=O)O DBGSRZSKGVSXRK-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- 229940075142 2,5-diaminotoluene Drugs 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- KNDAEDDIIQYRHY-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(piperazin-1-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCNCC1 KNDAEDDIIQYRHY-UHFFFAOYSA-N 0.000 description 1
- DUCHOMQDJBOBMI-UHFFFAOYSA-N 2-[4-[4-(2-aminophenoxy)phenyl]phenoxy]aniline Chemical group NC1=CC=CC=C1OC1=CC=C(C=2C=CC(OC=3C(=CC=CC=3)N)=CC=2)C=C1 DUCHOMQDJBOBMI-UHFFFAOYSA-N 0.000 description 1
- OBCSAIDCZQSFQH-UHFFFAOYSA-N 2-methyl-1,4-phenylenediamine Chemical compound CC1=CC(N)=CC=C1N OBCSAIDCZQSFQH-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- BZXJAHGHOJFYRT-UHFFFAOYSA-N 3-[2-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C(=CC=CC=2)OC=2C=C(N)C=CC=2)=C1 BZXJAHGHOJFYRT-UHFFFAOYSA-N 0.000 description 1
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 1
- INQGLILZDPLSJY-UHFFFAOYSA-N 3-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 INQGLILZDPLSJY-UHFFFAOYSA-N 0.000 description 1
- LBPVOEHZEWAJKQ-UHFFFAOYSA-N 3-[4-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 LBPVOEHZEWAJKQ-UHFFFAOYSA-N 0.000 description 1
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 1
- JUEHTVCFYYHXRP-UHFFFAOYSA-N 3-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=CC(N)=C1 JUEHTVCFYYHXRP-UHFFFAOYSA-N 0.000 description 1
- ZRJAHFLFCRNNMR-UHFFFAOYSA-N 3-amino-2-(4-aminophenyl)benzoic acid Chemical compound C1=CC(N)=CC=C1C1=C(N)C=CC=C1C(O)=O ZRJAHFLFCRNNMR-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- FYYYKXFEKMGYLZ-UHFFFAOYSA-N 4-(1,3-dioxo-2-benzofuran-5-yl)-2-benzofuran-1,3-dione Chemical compound C=1C=C2C(=O)OC(=O)C2=CC=1C1=CC=CC2=C1C(=O)OC2=O FYYYKXFEKMGYLZ-UHFFFAOYSA-N 0.000 description 1
- VILWHDNLOJCHNJ-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfanylphthalic acid Chemical group C1=C(C(O)=O)C(C(=O)O)=CC=C1SC1=CC=C(C(O)=O)C(C(O)=O)=C1 VILWHDNLOJCHNJ-UHFFFAOYSA-N 0.000 description 1
- XBAMMTPCYPMBNO-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfinylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 XBAMMTPCYPMBNO-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- IWXCYYWDGDDPAC-UHFFFAOYSA-N 4-[(3,4-dicarboxyphenyl)methyl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1CC1=CC=C(C(O)=O)C(C(O)=O)=C1 IWXCYYWDGDDPAC-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- RYYUUQPLFHRZOY-UHFFFAOYSA-N 4-[2-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC=C1OC1=CC=C(N)C=C1 RYYUUQPLFHRZOY-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- QBSMHWVGUPQNJJ-UHFFFAOYSA-N 4-[4-(4-aminophenyl)phenyl]aniline Chemical group C1=CC(N)=CC=C1C1=CC=C(C=2C=CC(N)=CC=2)C=C1 QBSMHWVGUPQNJJ-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- WQYIKPNLSQLBPT-UHFFFAOYSA-N 4-[[(4-aminophenyl)methylamino]methyl]aniline Chemical compound C1=CC(N)=CC=C1CNCC1=CC=C(N)C=C1 WQYIKPNLSQLBPT-UHFFFAOYSA-N 0.000 description 1
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 1
- VMFQOYLCRZRUMB-UHFFFAOYSA-N 4-n-(4-aminophenyl)-4-n-butylbenzene-1,4-diamine Chemical compound C=1C=C(N)C=CC=1N(CCCC)C1=CC=C(N)C=C1 VMFQOYLCRZRUMB-UHFFFAOYSA-N 0.000 description 1
- YFBMJEBQWQBRQJ-UHFFFAOYSA-N 4-n-(4-aminophenyl)-4-n-phenylbenzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1N(C=1C=CC(N)=CC=1)C1=CC=CC=C1 YFBMJEBQWQBRQJ-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- PHCJRSXXXCZFPL-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfanyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(SC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 PHCJRSXXXCZFPL-UHFFFAOYSA-N 0.000 description 1
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 1
- MQAHXEQUBNDFGI-UHFFFAOYSA-N 5-[4-[2-[4-[(1,3-dioxo-2-benzofuran-5-yl)oxy]phenyl]propan-2-yl]phenoxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC2=CC=C(C=C2)C(C)(C=2C=CC(OC=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)C)=C1 MQAHXEQUBNDFGI-UHFFFAOYSA-N 0.000 description 1
- VFALDCWSTKEUED-UHFFFAOYSA-N 5-chloro-4-methylbenzene-1,3-diamine Chemical compound CC1=C(N)C=C(N)C=C1Cl VFALDCWSTKEUED-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- 239000006057 Non-nutritive feed additive Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000011157 advanced composite material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010954 commercial manufacturing process Methods 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- AIJZIRPGCQPZSL-UHFFFAOYSA-N ethylenetetracarboxylic acid Chemical compound OC(=O)C(C(O)=O)=C(C(O)=O)C(O)=O AIJZIRPGCQPZSL-UHFFFAOYSA-N 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 108010025899 gelatin film Proteins 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 125000000654 isopropylidene group Chemical group C(C)(C)=* 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- OKBVMLGZPNDWJK-UHFFFAOYSA-N naphthalene-1,4-diamine Chemical compound C1=CC=C2C(N)=CC=C(N)C2=C1 OKBVMLGZPNDWJK-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- 238000007797 non-conventional method Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000003921 particle size analysis Methods 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920002939 poly(N,N-dimethylacrylamides) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000012970 tertiary amine catalyst Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000003878 thermal aging Methods 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
- C08G73/105—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/016—Additives defined by their aspect ratio
-
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Definitions
- the present disclosure relates generally to wire wrap compositions comprising a polyimide layer and a bonding layer. More specifically, the polyimide layer comprises a sub-micron filler and a polyimide polymer having a hybrid backbone structure.
- Wire wraps need to have good electrical properties (e.g., dielectric strength), as well as good mechanical properties. High dielectric strength as well as good mechanical properties are required for the vigorous conditions associated with aerospace applications.
- a wire will be bent into various shapes or directions.
- the wire wrap covering the wire or cable needs to have the ability to do the same.
- modulus and elongation are important properties in addition to dielectric strength in wire wrap applications.
- Conventional wire wrap (cable wrap) fails to provide the desired compactness, with the high mechanical strength.
- the present disclosure is directed to a wire wrap composition
- a polyimide layer has a first surface and a second surface
- the polyimide layer comprises a polyimide and a sub-micron filler.
- the polyimide is derived from
- the mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine based upon the total dianhydride component and total diamine component of the polyimide; and
- the sub-micron filler is less than 550 nanometers (as a numerical average) in at least one dimension, has an aspect ratio greater than 3:1, is less than the polyimide layer thickness in all dimensions, and is present in an amount from 10 to 45 volume percent of the polyimide layer.
- the polyimide layer has a thickness from 5 to 150 microns.
- the bonding layer has a first surface and a second surface, the bonding layer first surface being adjacent to the polyimide layer first surface, the bonding layer comprising
- FIG. 1 illustrates a dielectric substrate in accordance with the present invention wrapped around a conductive wire or cable.
- FIG. 1 illustrates a wrap having no overlap, although as a practical matter, the dielectric substrates of the present invention would typically be wrapped around a wire or cable in an overlapping fashion.
- Film is intended to mean a free-standing film or a (self-supporting or non self-supporting) coating.
- film is used interchangeably with the term “layer” and refers to covering a desired area.
- Dianhydride as used herein is intended to include precursors or derivatives thereof, which may not technically be a dianhydride but would nevertheless functionally equivalent due to the capability of reacting with a diamine to form a polyamic acid which in turn could be converted into a polyimide.
- Diamine as used herein is intended to include precursors or derivatives thereof, which may not technically be diamines but are nevertheless functionally equivalent due to the capability of reacting with a dianhydride to form a polyamic acid which in turn could be converted into a polyimide.
- Polyamic acid as used herein is intended to include any polyimide precursor material derived from a combination of dianhydride and diamine monomers or functional equivalents thereof and capable of conversion to a polyimide.
- Sub-micron is intended to describe particles having (as a numerical average) at least one dimension that is less than a micron.
- “Chemical conversion” or “chemically converted” as used herein denotes the use of a catalyst (accelerator) or dehydrating agent (or both) to convert the polyamic acid to polyimide and is intended to include a partially chemically converted polyimide which is then dried at elevated temperatures to a solids level greater than 98%.
- Aspect ratio is intended to mean a ratio of one dimension to another, such as a ratio of length to height.
- the terms “comprises,” “comprising,” “includes,” “including,” “has,” “having” or any other variation thereof, are intended to cover a non-exclusive inclusion.
- a method, process, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such method, process, article, or apparatus.
- “or” refers to an inclusive or and not to an exclusive or. For example, a condition A or B is satisfied by any one of the following: A is true (or present) and B is false (or not present), A is false (or not present) and B is true (or present), and both A and B are true (or present).
- the wire wrap compositions of the present disclosure have a polyimide layer and a bonding layer.
- the polyimide layer comprises a polyimide and a sub-micron filler.
- the polyimide has a hybrid backbone structure comprising rigid rod portions and non-rigid rod portions.
- the sub-micron filler can generally be incorporated into the polyimide layer at relatively high loadings without causing the polyimide layer to be unduly brittle while maintaining or decreasing coefficient of thermal expansion and increasing storage modulus.
- the polyimides of the present disclosure are derived from the polymerization reaction of certain aromatic dianhydrides with certain aromatic diamines to provide a polymeric backbone structure that comprises both rigid rod portions and non-rigid rod portions.
- the rigid rod portions arise from the polymerization of aromatic rigid rod monomers into the polyimide, and the non-rigid rod portions arise from the polymerization of non-rigid rod aromatic monomers into the polyimide.
- Aromatic rigid rod monomers give a co-linear (about 180°) configuration to the polymer backbone, and therefore relatively little movement capability, when polymerized into a polyimide.
- aromatic rigid rod diamine monomers examples include:
- aromatic rigid rod dianhydride monomers examples include:
- Non-rigid rod monomers for purposes of this disclosure are intended to mean aromatic monomers capable of polymerizing into a polyimide backbone structure having substantially greater freedom of movement compared to the rigid rod monomers described and exemplified above.
- the non rigid rod monomers when polymerized into a polyimide, provide a backbone structure having a bend or otherwise are not co-linear along the polyimide backbone they create (e.g., are not about 180°).
- Examples of non-rigid rod monomers in accordance with the present disclosure include any diamine and any dianhydride capable of providing a rotational or bending bridging group along the polyimide backbone.
- rotational or bending bridging groups include —O—, —S—, —SO 2 —, —C(O)—, —C(CH 3 ) 2 —, —C(CF 3 ) 2 —, and —C(R,R′)— where R and R′ are the same or different and are any organic group capable of bonding to a carbon.
- non-rigid rod diamines examples include: 4,4′-diaminodiphenyl ether (“ODA”), 2,2-bis-(4-aminophenyl)propane, 1,3-diaminobenzene (MPD), 4,4′-diaminobenzophenone, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenyl sulfide, 4,4′-diaminodiphenyl sulfone, 3,3′-diaminodiphenyl sulfone, bis-(4-(4-aminophenoxy)phenyl sulfone (BAPS), 4,4′-bis-(aminophenoxy)biphenyl (BAPB), 3,4′-diaminodiphenyl ether, 4,4′-diaminobenzophenone, 4,4′-isopropylidenedianiline, 2,2′-bis-(3-
- non-rigid rod aromatic dianhydrides examples include 2,2′,3,3′-benzophenone tetracarboxylic dianhydride, 2,3,3′,4′-benzophenone tetracarboxylic dianhydride, 3,3′,4,4′-benzophenone tetracarboxylic dianhydride (BTDA), 2,2′,3,3′-biphenyl tetracarboxylic dianhydride, 2,3,3′,4′-biphenyl tetracarboxylic dianhydride, 4,4′-thio-diphthalic anhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride (DSDA), bis(3,4-dicarboxyphenyl)sulfoxide dianhydride, 4,4′-oxydiphthalic anhydride (ODPA), bis(3,4-dicarboxyphenyl)thio ether dianhydride, 2,2-Bis[4-(3,4-
- the mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine based upon the total dianhydride component and diamine component of the polyimide.
- 20-80 includes any range between and optionally including 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75 and 80
- 80-20 includes any range between and optionally including 80, 75, 70, 65, 60, 55, 45, 40, 35, 30, and 25).
- the polyimide of the present disclosure is derived from substantially equal molar amounts of 4,4′-diaminodiphenyl ether (4,4′-ODA) non-rigid rod monomer, and pyromellitic dianhydride (PMDA), rigid rod monomer.
- 4,4′-ODA 4,4′-diaminodiphenyl ether
- PMDA pyromellitic dianhydride
- at least 70 mole percent of the aromatic dianhydride component is pyromellitic dianhydride
- at least 70 mole percent of the aromatic diamine component is 4,4′-diaminodiphenyl ether.
- At least 70, 75, 80, 85, 90 or 95 mole percent of the aromatic dianhydride component is pyromellitic dianhydride (based upon total dianydride content of the polyimide); and at least 70, 75, 80, 85, 90 or 95 mole percent of the aromatic diamine component is 4,4′-diaminodiphenyl ether (based upon total diamine content of the polyimide).
- pyromellitic dianhydride based upon total dianydride content of the polyimide
- at least 70, 75, 80, 85, 90 or 95 mole percent of the aromatic diamine component is 4,4′-diaminodiphenyl ether (based upon total diamine content of the polyimide).
- Such PMDA//4,4′ODA polyimides have been found to be particularly well suited for combination with the sub-micron fillers of the present disclosure, for improved properties at a relatively low cost.
- the polyimide is derived from 100 mole percent pyromellitic dianhydride and 100 mole percent 4,4′-diaminodiphenyl ether.
- the polyimide is a random copolymer derived from 4,4′-diaminodiphenyl ether and 1,4 diaminobenzene with pyromellitic dianhydride and 3,3′,4,4′-biphenyl tetracarboxylic dianhydride.
- the polyimide is a random copolymer derived from 4,4′-diaminodiphenyl ether and 1,4 diaminobenzene with pyromellitic dianhydride.
- At least 75 mole percent of the aromatic dianhydride component is pyromellitic dianhydride and 70 mole percent 4,4′-diaminodiphenyl ether and 30 mole percent 1,4 diaminobenzene as the aromatic diamine component.
- the polyimide is a block copolymer.
- a block copolymer is a polymer in which there are sequences of substantially one dianhydride/diamine combination along the polymer backbone as opposed to a completely random distribution of monomer sequences. Typically this is achieved by sequential addition of different monomers during the polyamic acid preparation.
- the polyimide is block copolymer derived from 4,4′-diaminodiphenyl ether and 1,4-diaminobenzene with pyromellitic dianhydride.
- the polyimide is a block copolymer is derived from 4,4′-diaminodiphenyl ether (4,4′-ODA) and 1,4-diaminobenzene (PPD) with pyromellitic dianhydride (PMDA) and 3,3′,4,4′-biphenyl tetracarboxylic dianhydride (BPDA).
- the polyimide is a block copolymer consisting of substantially rigid blocks (PMDA reacted with PPD) and substantially more flexible blocks (PMDA reacted with ODA).
- the block copolymer is derived from 10 to 40 mole percent blocks of pyromellitic dianhydride and 1,4-diaminobenzene and from 90 to 60 mole percent blocks of pyromellitic dianhydride and 4,4′-diaminodiphenyl ether.
- the filler is a sub-micron (in at least one dimension) filler or a mixture of sub-micron fillers.
- the polyimide layer of the present disclosure comprises a sub-micron filler:
- Suitable sub-micron fillers are generally stable at temperatures above 300, 350, 400, 425 or 450° C., and in some embodiments do not significantly decrease the electrical insulation properties of the polyimide layer.
- the sub-micron filler is selected from a group consisting of needle-like fillers (acicular), fibrous fillers, platelet fillers and mixtures thereof.
- the sub-micron filler is substantially non-aggregated.
- the sub-micron filler can be hollow, porous, or solid.
- the sub-micron fillers of the present disclosure exhibit an aspect ratio of at least 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, or 15 to 1.
- the sub-micron filler aspect ratio is 5:1 or greater.
- the sub-micron filler aspect ratio is 10:1 or greater, and in another embodiment, the aspect ratio is 12:1 or greater.
- the sub-micron filler is selected from a group consisting of oxides (e.g., oxides comprising silicon, magnesium and/or aluminum), nitrides (e.g., nitrides comprising boron and/or silicon), carbides (e.g., carbides comprising tungsten and/or silicon) and combinations thereof.
- the sub-micron filler is acicular titanium dioxide, talc, SiC fiber, platy Al 2 O 3 or mixtures thereof. In some embodiments, the sub-micron filler is less than (as a numerical average) 50, 25, 20, 15, 12, 10, 8, 6, 5, 4, or 2 microns in all dimensions.
- carbon fiber and graphite can be used in combination with other sub-micron fillers to increase mechanical properties.
- the loading of graphite, carbon fiber and/or electrically conductive fillers may need to be below the percolation threshold (perhaps less than 10 volume percent), since graphite and carbon fiber fillers can diminish electrical insulation properties and in some embodiments, diminished electrical insulation properties are not desirable.
- the sub-micron filler is coated with a coupling agent. In some embodiments, the sub-micron filler is coated with an aminosilane coupling agent. In some embodiments, the sub-micron filler is coated with a dispersant. In some embodiments, the sub-micron filler is coated with a combination of a coupling agent and a dispersant. In some embodiments, the sub-micron filer is coated with a coupling agent, a dispersant or a combination thereof. Alternatively, the coupling agent and/or dispersant can be incorporated directly into the polyimide layer and not necessarily coated onto the sub-micron filler. In some embodiments, the sub-micron filler comprises a acicular titanium dioxide, at least a portion of which is coated with an aluminum oxide.
- the sub-micron filler is chosen so that it does not itself degrade or produce off-gasses at the desired processing temperatures. Likewise in some embodiments, the sub-micron filler is chosen so that it does not contribute to degradation of the polymer.
- filler composites e.g. single or multiple core/shell structures
- one oxide encapsulates another oxide in one particle.
- polyimides can be filled with sub-micron filler of the present disclosure and thereby perform, at least in some ways, more similarly to more expensive polyimides, but at a much lower cost. More expensive monomers such as BPDA or fluorinated monomers can at least in part (or entirely) be replaced with less expensive monomers. In addition to expensive monomers, some polyimides are more difficult to process commercially, such as BPDA//PPD due to blistering. Lower production rates drive up the cost of the film. Additionally, polyimides derived from all rigid rod monomers may have low CTE and high modulus but, when filled, have low elongation.
- submicron fillers that have an aspect ratio of 3:1 or greater can be incorporated at relatively high loading levels (10 to 45 volume percent) into less expensive, easily processable polyimides.
- the sub-micron filler of the present disclosure tends to increase the storage modulus and decrease or approximately maintain the CTE of the polyimide layer of the present disclosure with out causing the polyimide layer to become unduly brittle.
- the sub-micron filler of the present disclosure may not behave in the same manner in all polyimides. Surprisingly in a rigid rod polyimide (BPDA//PPD) the CTE may be greater than in unfilled rigid rod polyimide.
- BPDA//PPD rigid rod polyimide
- the sub-micron filler of the present disclosure when incorporated into the polyimides of the present disclosure, produce polyimide layers having better properties (or balance of properties) compared to their conventional non-high aspect ratio (less than 3:1 aspect ratio) counterparts.
- the polyimide layer comprises a polyimide derived from 100 mole percent of pyromellitic dianhydride as the aromatic dianhydride component; and 100 mole percent 4,4′-diaminodiphenyl ether as the aromatic diamine component and the sub-micron filler is acicular titanium dioxide, talc, SiC fiber, platy Al 2 O 3 or mixture thereof.
- the polyimide is a homopolymer of pyromellitic dianhydride and 4,4′-diaminodiphenyl ether.
- the polyimide layer comprises a polyimide wherein the polyimide is block copolymer derived from: 10 to 40 mole percent blocks of pyromellitic dianhydride and 1,4 diaminobenzene; from 90 to 60 mole percent blocks of pyromellitic dianhydride and 4,4′-diaminodiphenyl ether and the sub-micron filler is acicular titanium dioxide, talc, SiC fiber, platy Al 2 O 3 or mixture thereof.
- the polyimide is block copolymer derived from: 10 to 40 mole percent blocks of pyromellitic dianhydride and 1,4 diaminobenzene; from 90 to 60 mole percent blocks of pyromellitic dianhydride and 4,4′-diaminodiphenyl ether and the sub-micron filler is acicular titanium dioxide, talc, SiC fiber, platy Al 2 O 3 or mixture thereof.
- the polyimide layers of the present disclosure are generally useful for insulating electrical conductors, particularly electrical wires and cables, and can generally be manufactured by combining a polyimide layer with at least one bonding layer.
- the sub-micron filler will substantially maintain (within 80, 70. 60, 50, 40, 30, 20, 10, 5, 4, 3, 2, or 1 percent, plus or minus) the coefficient of thermal expansion (CTE) while improving mechanical and thermal properties.
- CTE coefficient of thermal expansion
- the polyimide layers of the present disclosure have an in-plane CTE in a range between (and optionally including) any two of the following: 1, 5, 10, 15, 20, 25, 30 and 35 ppm/° C., where the in-plane coefficient of thermal expansion (CTE) is measured between 60° C. (or 50° C.) and 350° C.
- CTE in-plane coefficient of thermal expansion
- Some unfilled block or random copolymers of the present disclosure can have a relatively low CTE.
- sub-micron fillers of the present disclosure have little impact on a block copolymer CTE.
- the sub-micron fillers of the present disclosure may increase the CTE of block or random copolymers having a low CTE but the CTE is still maintained in a desirable range.
- the thickness of a polyimide layer can also impact CTE, where thinner films tend to give a lower CTE (and thicker films, a higher CTE), and therefore, polyimide layer thickness can be used to fine tune polyimide layer CTE, depending upon any particular application selected.
- the polyimide layers of the present disclosure have a thickness in a range between (and optionally including) any of the following thicknesses (in microns): 5, 6, 8, 10, 12, 15, 20, 25, 50, 75, 100, 125 and 150 microns.
- Monomers and sub-micron fillers within the scope of the present disclosure can also be selected or optimized to fine tune CTE within the above range. Ordinary skill and experimentation may be necessary in fine tuning any particular CTE of the polyimide layers of the present disclosure, depending upon the particular application.
- the in-plane CTE of the polyimide layer can be obtained by thermomechanical analysis utilizing a TA Instruments TMA-2940 run at 10° C./min, up to 400° C., then cooled and reheated to 400° C., with the CTE in ppm/° C. obtained during the reheat scan between 50° C. and 350° C.
- the in-plane CTE of the polyimide layer can be obtained by Thermal Mechanical Analysis (TA Instruments, TMA-2940, heat 10° C./min, up to 460° C., then cooled and reheat to 500° C.) was evaluated between 50-350° C. on the reheat.
- the in-plane CTE of the polyimide layer can be obtained by Thermal Mechanical Analysis (TA Instruments, TMA-2940, heat 10° C./min, up to 380° C., then cooled and reheated to 380° C.) and evaluated between 50-350° C. on the reheat.
- Thermal Mechanical Analysis TA Instruments, TMA-2940, heat 10° C./min, up to 380° C., then cooled and reheated to 380° C.
- the sub-micron filler increases the storage modulus above the glass transition temperature (Tg) of the polyimide. In some embodiments, the sub-micron filler of the present disclosure increases the storage modulus at 25° C. at least 20, 22, 24, 26, 28 or 30% compared to sub-micron filler having an aspect ratio less than 3:1. In some embodiments, the sub-micron filler of the present disclosure increases the storage modulus at 480° C. to 500° C. at least 40, 42, 44 or 46% compared to sub-micron filler having an aspect ration less than 3:1. In some embodiments, the sub-micron filler of the present disclosure increases the storage modulus at 25° C. at least 38, 40, 42, 44 or 46% compared to unfilled polyimide. In some embodiments, the sub-micron filler of the present disclosure increases the storage modulus at 480° C. to 500° C. at least 52, 53, 54 or 55% compared to unfilled polyimide.
- Tg glass transition temperature
- the tensile elongation remains acceptable when greater than 10 volume percent of the sub-micron filler is used. In one embodiment, the tensile elongation remains acceptable when greater than 30 volume percent of the sub-micron filler is used. In yet another embodiment, the tensile elongation remains acceptable when greater than 40 volume percent of the sub-micron filler is used.
- Polyimide layers of the present disclosure can be made by methods well known in the art.
- the polyimide layer can be produced by combining the above monomers together with a solvent to form a polyamic acid (also called a polyamide acid solution).
- the dianhydride and diamine components are typically combined in a molar ratio of aromatic dianhydride component to aromatic diamine component of from 0.90 to 1.10. Molecular weight can be adjusted by adjusting the molar ratio of the dianhydride and diamine components.
- a polyamic acid casting solution is derived from the polyamic acid solution.
- the polyamic acid casting solution comprises the polyamic acid solution combined with conversion chemicals, such as: (i) one or more dehydrating agents, such as, aliphatic acid anhydrides (acetic anhydride, etc.) and aromatic acid anhydrides; and (ii) one or more catalysts, such as, aliphatic tertiary amines (triethylamine, etc.), aromatic tertiary amines (dimethylaniline, etc) and heterocyclic tertiary amines (pyridine, picoline, isoquinoline, etc).
- conversion chemicals such as: (i) one or more dehydrating agents, such as, aliphatic acid anhydrides (acetic anhydride, etc.) and aromatic acid anhydrides; and (ii) one or more catalysts, such as, aliphatic tertiary amines (triethylamine, etc.), aromatic tertiary
- the anhydride dehydrating material is often used in a molar excess of the amount of amide acid groups in the copolyamic acid.
- the amount of acetic anhydride used is typically about 2.0-3.0 moles per equivalent of amide acid.
- a comparable amount of tertiary amine catalyst is used.
- the polyamic acid is dissolved in an organic solvent at a concentration from about 5 weight percent up to and including 40 weight percent. In one embodiment, the polyamic acid is dissolved in an organic solvent at a concentration of about 5, 10, 15, 20, 25, 30, 35 or 40 weight percent.
- suitable solvents include: formamide solvents (N,N-dimethylformamide, N,N-diethylformamide, etc.), acetamide solvents (N,N-dimethylacetamide, N,N-diethylacetamide, etc.), pyrrolidone solvents (N-methyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, etc.), phenol solvents (phenol, o-, m- or p-cresol, xylenol, halogenated phenols, catechol, etc.), hexamethylphosphoramide and gamma-butyrolactone. It is desirable to use one of these solvents or mixtures thereof.
- the prepolymer can be prepared and combined with the sub-micron filler (dispersion or colloid thereof) using numerous variations to form the polyimide layer of this disclosure.
- “Prepolymer” is intended to mean a lower molecular weight polymer, typically made with a small stoichiometric excess (about 2-4%) of diamine monomer (or excess dianhydride monomer). Increasing the molecular weight (and solution viscosity) of the prepolymer can be accomplished by adding incremental amounts of additional dianhydride (or additional diamine, in the case where the dianhydride monomer is originally in excess in the prepolymer) in order to approach a 1:1 stoichiometric ratio of dianhydride to diamine.
- the sub-micron filler (dispersion or colloid thereof) can be added at several points in the polyimide layer preparation.
- the colloid or dispersion is incorporated into a prepolymer to yield a Brookfield solution viscosity in the range of about 50-100 poise at 25° C.
- the colloid or dispersion can be combined with the monomers directly, and in this case, polymerization occurs with the filler present during the reaction.
- the monomers may have an excess of either monomer (diamine or dianhydride) during this “in situ” polymerization.
- the monomers may also be added in a 1:1 ratio.
- the polyamic acid casting solution can then be cast or applied onto a support, such as an endless belt or rotating drum.
- the polyamic acid contain conversion chemical reactants.
- the solvent-containing film can be converted into a self-supporting film by baking at an appropriate temperature (thermal curing) to remove solvent or baking together with the chemical conversion reactants (chemical curing).
- the film can then be separated from the support, oriented such as by tentering, with continued thermal curing to provide a film (polyimide layer).
- film smoothness is desirable, since surface roughness: i. can interfere with the functionality of the layer or layers deposited on the filled polyimide layer of the present disclosure, ii. can increase the probability of electrical or mechanical defects, and iii. can diminish property uniformity along the polyimide layer.
- the sub-micron filler (and any other discontinuous domains) are sufficiently dispersed during polyimide layer formation, such that the sub-micron filler (and any other discontinuous domains) are sufficiently between the surfaces of the polyimide layer upon polyimide layer formation to provide a final polyimide layer having an average surface roughness (Ra) of less than 1000, 750, 500 or 400 nanometers.
- Surface roughness as provided herein can be determined by optical surface profilometry to provide Ra values, such as, by measuring on a Veeco Wyco NT 1000 Series instrument in VSI mode at 25.4 ⁇ or 51.2 ⁇ utilizing Wyco Vision 32 software.
- the polyamic acid (and casting solution) can further comprise any one of a number of additives, such as processing aids (e.g., oligomers), antioxidants, light stabilizers, flame retardant additives, anti-static agents, heat stabilizers, ultraviolet absorbing agents, fillers or various reinforcing agents.
- processing aids e.g., oligomers
- antioxidants e.g., oligomers
- light stabilizers e.g., oligomers
- flame retardant additives e.g., anti-static agents
- heat stabilizers e.g., ultraviolet absorbing agents
- fillers e.g., fillers or various reinforcing agents.
- alkoxy silane coupling agent (or any conventional, nonconventional, presently known or future discovered coupling agent) can be added during the process by pretreating the sub-micron filler prior to formulation.
- Alkoxysilane coupling agents can also be added during the “in situ” polymerization by combining the fillers and monomers with the alkoxysilane, generally so long as the coupling agent does not interfere with the polymerization reaction.
- the dianhydride can be contacted with the sub-micron filler. While not intending to be bound to any particular theory or hypothesis, it is believed such contact between the dianhydride and the sub-micron filler can functionalize the sub-micron filler with the dianhydride prior to further reaction with the monomers or prepolymer.
- a filled polyamic acid composition is generally cast into a film, which is subjected to drying and curing (chemical and/or thermal curing) to form a filled polyimide film. Any conventional or non-conventional method of manufacturing filled polyimide films can be used in accordance with the present disclosure. The manufacture of filled polyimide films in general is well known and need not be further described here.
- the polyimide used in polyimide layer of the present disclosure has a high glass transition temperature (Tg) of greater than 300, 310, 320, 330, 340, 350, 360, 370 380, 390 or 400° C.
- Tg glass transition temperature
- a high Tg generally helps maintain mechanical properties, such as storage modulus, at high temperatures.
- electrically insulating fillers may be added to modify the electrical properties of the polyimide layer.
- filtering can be done at any stage of the polyimide layer manufacture, such as, filtering solvated filler before or after it is added to one or more monomers and/or filtering the polyamic acid, particularly when the polyamic acid is at low viscosity, or otherwise, filtering at any step in the manufacturing process that allows for filtering.
- such filtering is conducted at the minimum suitable filter pore size or at a level just above the largest dimension of the selected filler material.
- the sub-micron filler is subjected to intense dispersion energy, such as agitation and/or high shear mixing or media milling or other dispersion techniques, including the use of dispersing agents, when incorporated into the film (or incorporated into a polyimide precursor) to inhibit unwanted agglomeration above the desired maximum filler size or to break up aggregates which may be originally present in the sub-micron filler.
- intense dispersion energy such as agitation and/or high shear mixing or media milling or other dispersion techniques, including the use of dispersing agents
- a single layer film can be made thicker in an attempt to decrease the effect of defects caused by unwanted (or undesirably large) discontinuous phase material within the film.
- multiple layers of polyimide may be used to diminish the harm of any particular defect (unwanted discontinuous phase material of a size capable of harming desired properties) in any particular layer, and generally speaking, such multilayers will have fewer defects in performance compared to a single polyimide layer of the same thickness.
- Using multiple layers of polyimide films can diminish or eliminate the occurrence of defects that may span the total thickness of the film, because the likelihood of having defects that overlap in each of the individual layers tends to be extremely small. Therefore, a defect in any one of the layers is much less likely to cause an electrical or other type failure through the entire thickness of the film.
- the polyimide layer comprises two or more polyimide layers. In some embodiments, the polyimide layers are the same. In some embodiments, the polyimide layers are different. In some embodiments, the polyimide layers independently may comprise a thermally stable filler, reinforcing fabric, inorganic paper, sheet, scrim or combinations thereof. Optionally, 0-55 weight percent of the film also includes other ingredients to modify properties as desired or required for any particular application.
- the polyimide layer may have its surface modified to improve adhesion of the core layer to other layers.
- useful surface modification is, but are not limited to, corona treatment, plasma treatment under atmospheric pressure, plasma treatment under reduced pressure, treatment with coupling agents like silanes and titanates, sandblasting, alkali-treatment, and acid-treatment.
- organic and/or inorganic metal compounds e.g. metal oxides and/or metal complexes.
- Addition of these metal compounds is disclosed for example in U.S. Pat. No. 4,742,099 (tin compounds, titanium compounds, etc.). Commonly, these metal compounds are added to the polyamic acid or are applied to an uncured wet film. Addition of organic compounds may also be used to improve adhesion strength between the polyimide layer and any adjacent layers.
- the bonding layer generally provides the polyimide layer with excellent resistance to mechanical degradation, especially scrape abrasion and cut-through. Improved scrape abrasion resistance (i.e. improved resistance to ultimate mechanical failure of the insulation system) generally can be particularly useful in applications where unwanted electrical arc tracking (seen when the insulation is mechanically degraded) is of great concern.
- the bonding layer also provides improved bonding performance between any exterior layer (such as polytetrafluoroethylene) and the interior polyimide core layer.
- the bonding layer a poly(tetrafluoroethylene-co-perfluoro[alkyl vinyl ether]) in an amount between (and optionally including) any two of the following numbers: 65 70, 75, 80, 85, 90, 95 and 100 weight percent based on the total weight of the bonding layer.
- a polyimide adhesive may be used as the bonding layer.
- the bonding layer is tetrafluoroethylene hexafluoropropylene copolymer or a poly(ethylene-co-tetrafluoroethylene).
- the bonding layer is poly(tetrafluoroethylene-co-perfluoro [alkyl vinyl ether])
- the bonding layer may optionally be blended with up to 35 weight percent (based on the total weight percent of the bonding layer) of a tetrafluoroethylene hexafluoropropylene copolymer (FEP) fluoropolymer.
- FEP tetrafluoroethylene hexafluoropropylene copolymer
- the bonding layer will generally have a thickness in a range between (and optionally including) any two of the following numbers: 0.25, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.25, 1.5, 1.75, 2, 3, 4, 5, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24 and 25 microns.
- a useful thickness range is oftentimes in a range from about 0.75 microns to 2.5 microns (generally in the range of about 0.03 to about 0.10 mils). In practice, the desired thickness can depend upon the particular wire specifications, particularly for military or commercial aircraft applications.
- the bonding layer may be applied to the polyimide layer or the optional adhesive primer layer by, but not limited to, colloidal aqueous dispersion coating or lamination.
- the wire wrap of the present disclosure comprised a polyimide layer and a bonding layer.
- the polyimide layer has a first surface and a second surface.
- the bonding layer has a first and second surface. In some embodiments, the bonding layer first surface being adjacent to the polyimide layer first surface.
- the wire wrap of the present disclosure may optionally contain additional adhesive layers to improve adhesion between different layers or surfaces or even to improve adhesion to the wire wrap itself (when the wire wrap is applied in an overlapping fashion).
- the wire wrap composition comprises a polyimide-to-metal bonding layer in contact with the polyimide layer second surface, the polyimide-to-metal bonding layer comprising from 70 to 100 weight percent poly(tetrafluoroethylene-co-hexafluoropropylene) based on the total weight of the polyimide-to-metal bonding layer.
- the optional polyimide-to-metal bonding layer is oftentimes used as the innermost layer, generally intended for placement substantially adjacent to an electrically conductive wire (or cable) located substantially at the center of a wrapped system.
- the polyimide-to-metal bonding layer can be used to improve adhesion of the polyimide layer to the wire or cable.
- the polyimide-to-metal bonding layer may comprise up to 30 weight percent, based on the total weight of the polyimide-to-metal bonding layer, additional fluoropolymers including, but not limited to, polytetrafluoroethylene, poly(tetrafluoroethylene-co-perfluoro[alkyl vinyl ether]) (for example, Teflon® PFA) or poly(ethylene-co-tetrafluoroethylene) (ETFE).
- additional fluoropolymers including, but not limited to, polytetrafluoroethylene, poly(tetrafluoroethylene-co-perfluoro[alkyl vinyl ether]) (for example, Teflon® PFA) or poly(ethylene-co-tetrafluoroethylene) (ETFE).
- the polyimide-to-metal bonding layer thickness is between (and optionally including) any two of the following: 0.25, 0.5, 0.7, 1, 5, 10, 15, 20 and 25.0 microns. In another embodiment the polyimide-to-metal bonding layer thickness is from 8 to 20 microns.
- the wire wrap composition comprises adhesive primer layer in contact with and between the polyimide layer first surface and the bonding layer first surface, the adhesive primer layer comprising from 70 to 100 weight percent poly(tetrafluoroethylene-co-hexafluoropropylene) based on the total weight of the adhesive primer layer.
- the optional adhesive primer layer can be used to improve adhesion between the bonding layer and the polyimide layer.
- the adhesive primer layer may comprise up to 30 weight percent, based on the total weight of the adhesive primer layer, additional fluoropolymers including, but not limited to, polytetrafluoroethylene, poly(tetrafluoroethylene-co-perfluoro[alkyl vinyl ether]) or poly(ethylene-co-tetrafluoroethylene) (ETFE).
- additional fluoropolymers including, but not limited to, polytetrafluoroethylene, poly(tetrafluoroethylene-co-perfluoro[alkyl vinyl ether]) or poly(ethylene-co-tetrafluoroethylene) (ETFE).
- the adhesive primer layer thickness is between (and optionally including) any two of the following: 0.25, 0.5, 0.7, 1, 5, 10, 15, 20 and 25.0 microns. In another embodiment the adhesive primer layer thickness is from 8 to 20 microns.
- the polyimide-to-metal bonding layer and the adhesive primer layer may be the same or different.
- the wire wrap composition additionally comprises an polytetrafluoroethylene exterior layer in contact with the bonding layer second surface.
- the exterior layer will generally provide some scrape abrasion resistance, chemical resistance, and thermal durability when the structure is wrapped about a wire or cable or the like.
- the exterior layer thickness is generally between (and optionally including) any two of the following: 1, 10, 20, 40, 60, 80, 100, 120, 140, 160, 180 and 200 microns. In another embodiment the exterior layer thickness is from 2 to 50 microns. In some embodiments, other fluoropolymers can optionally be blended with polytetrafluoroethylene. In some embodiments, the polytetrafluoroethylene exterior layer is partially or wholly sintered.
- a wire wrap 14 in accordance with the present invention is sealed around a wire or cable 2 .
- the polyimide layer 6 generally provides mechanical toughness and dielectric strength at high temperatures.
- the optional polyimide-to-metal (PTM) layer 4 generally provides improved adhesion of the polyimide core layer to the metal wire or surface and/or wire wrap itself.
- the optional adhesive primer layer 8 generally provides improved adhesive strength between the bonding layer 10 and the polyimide core layer 6 .
- the bonding layer 10 generally provides for improved mechanical resistance to scrape abrasion and cut through.
- the optional outer PTFE layer 12 generally provides improved thermal aging resistance, chemical resistance, and resistance to electrical arc tracking.
- the optional polyimide-to-metal bonding layer and adhesive primer layer can be coated onto the polyimide layer in the form of an aqueous dispersion.
- the optional polytetrafluoroethylene exterior layer can be applied separately as a porous, sinterable laminate tape and then partially or wholly sintered (and heat-sealed) generally under high temperature to wholly or partially densify and adhere the polytetrafluoroethylene exterior layer to the other layers of the present disclosure.
- additives can be incorporated into one or more of the layers to improve the performance of any particular layer at elevated temperatures.
- Films or sheets of the wire wrap compositions of the present disclosure can be slit into narrow widths to provide tapes. These tapes can then be wound around an electrical conductor in spiral fashion with or without an overlap. The amount of overlap can vary, depending upon the angle of the wrap.
- the tension employed during the wrapping operation can also vary widely, ranging from just enough tension to prevent wrinkling, to a tension high enough to stretch and neck down the tape. Even when the tension is low, a snug wrap is possible since the tape will often shrink under the influence of heat during any ensuing heat-sealing operation. Heat-sealing of the tape can be accomplished by treating the tape-wrapped conductor at a temperature and time sufficient to fuse the bonding layer to the other layers in the composite.
- the heat-sealing temperature required ranges generally from 240, 250, 275, 300, 325 or 350° C. to 375, 400, 425, 450, 475 or 500° C., depending upon the insulation thickness, the gauge of the metal conductor, the speed of the production line and the length of the sealing.
- Examples 1-4 demonstrate that the sub-micron filler of the present disclosure at 10 volume percent or higher significantly increase storage modulus and lower CTE when compared to unfilled Comparative Example 1, while maintaining adequate elongation to break.
- a 6 wt % solution of pyromellitic anhydride was prepared by combining 9.00 g of PMDA (Aldrich 412287, Allentown, Pa.) and 15 ml of DMAC.
- the PMDA solution was slowly added to the prepolymer slurry to achieve a final viscosity of 1090 poise.
- the formulation was stored overnight at 0° C. to allow it to degas.
- the formulation was cast using a 25 mil doctor blade onto a surface of a glass plate to form a 3′′ ⁇ 4′′ film.
- the cast film and the glass plate are then soaked in a solution containing 110 ml of 3-picoline (beta picoline, Aldrich, 242845) and 110 ml of acetic anhydride (Aldrich, 98%, P42053).
- the film was subsequently lifted off of the glass surface, and mounted on a 3′′ ⁇ 4′′ pin frame.
- the mounted film was placed in a furnace (Thermolyne, F6000 box furnace). The furnace was purged with nitrogen and heated according to the following temperature protocol:
- thermomechanical analysis TMA
- a TA Instrument model 2940 was used in tension mode. The instrument was purged with N 2 gas at 30-50 ml/min. A mechanical cooler was also used, which allowed temperature of the instrument to rapidly cool down between heating cycles.
- the film was cut to a 2.0 mm width and 6-9 mm length (in MD or casting direction). The film was clamped lengthwise to a length of 7.5-9.0 mm. A preload tension was set for 5 grams of force.
- the film was then subjected to heating from 0° C. to 400° C. at 10° C./min rate, held at 400° C. for 3 minutes, and cooled back down to 0° C. A second heating cycle to 400° C. was performed in the same way.
- the calculations of thermal expansion coefficient in the unit of ⁇ m/m-° C. (or pp/° C.) from 60° C. to 400° C. were reported for the casting direction (MD) for the second heating cycle.
- E′ Storage modulus
- DMA Dynamic Mechanical Analysis
- the static force in the length direction was 0.05 N with autotension of 125%.
- the film was heated at frequency of 1 Hz from 0° to 500° C. at a rate of 3° C./min.
- the storage modulus at 25° C. was measured to be 5757 MPa.
- Tensile properties (including % elongation at break) of the films were measured on an Instron model 3345 instrument.
- Crosshead gap (sample test length) was 1 inch (2.54 centimeters) and width was 0.5 inch (1.27 centimeters).
- Crosshead speed was 1 inch (2.54 centimeters)/min.
- Example 2 The same procedure as described in Example 1 was followed, with the following exceptions. 54.24 grams of the slurry containing acicular TiO 2 (FTL-110, 15 wt % in DMAC) was mixed with 136.15 grams of PMDA//ODA prepolymer (20 wt % in DMAC).
- the material was finished with the PMDA solution to a viscosity of 899 poise.
- Example 2 The same procedure as described in Example 1 was followed, with the following exceptions. 57.7 grams of the slurry containing acicular TiO 2 (FTL-110, 15 wt % in DMAC, high shear mixed) was combined with 63.3 grams of PMDA//ODA prepolymer (20.6 wt % in DMAC).
- the material was finished with the PMDA solution to a viscosity of 1380 poise.
- Example 2 The same procedure as described in Example 1 was followed, except for the following differences. 24.75 grams of SiC fibers (Silar® Silicon Carbide whiskers, beta form, Advanced Composites Materials, Greer, S.C., USA) was combined with 140.25 grams of anhydrous DMAC. The slurry was blended under high shear conditions, as described in Example 1.
- SiC fibers Silicon Carbide whiskers, beta form, Advanced Composites Materials, Greer, S.C., USA
- Example 2 The same procedure as described in Example 1 was followed, with the following exceptions.
- the slurry containing the inorganic particles was not added to the PDMA//ODA prepolymer (prepolymer is 20 wt % in DMAC).
- the material was finished with the PMDA solution to a viscosity of 890 poise.
- Comparative Examples 2-5 demonstrate the sub-micron filler of the present disclosure present below 10 volume percent does not produce a significant increase in storage modulus (especially storage modulii at 500° C.) or decrease CTE (relatively minor improvement in storage modulus and CTE).
- Example 2 A procedure similar to that described in Example 1 was used, except for the following differences. 24.08 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 135.92 grams of anhydrous DMAC, and the slurry mixed at high shear.
- Example 2 A procedure similar to that described in Example 1 was used, except for the following differences. 24.08 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 135.92 grams of anhydrous DMAC, and the slurry mixed at high shear.
- Example 2 A procedure similar to that described in Example 1 was used, except for the following differences. 24.08 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 135.92 grams of anhydrous DMAC, and the slurry mixed at high shear.
- Example 2 A procedure similar to that described in Example 1 was used, except for the following differences. 24.08 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 135.92 grams of anhydrous DMAC, and the slurry mixed at high shear.
- Comparative Example 6 demonstrates that filler having an aspect ratio less than 3:1 produces a film with lower storage modulus and higher CTE compared to Example 1 which has sub-micron filler with an aspect ratio of at least 3:1 at 15 volume percent. The film was brittle on the edges, and would not be viable in a commercial manufacturing process.
- Example 2 The same procedure as described in Example 1 was followed, with the following exceptions. 33.84 grams of the slurry containing Du Pont Light Stabilized Titania, 210 (DuPont, Wilmington Del., 25 wt % in DMAC, high shear mixed) was combined with 86.2 grams of PMDA//ODA prepolymer (20.6 wt % in DMAC).
- the material was finished with the PMDA solution to a viscosity of 1100 poise.
- Du Pont Titania 210 is a fine white powder with a distribution of particles centered in the range of 130-140 nm on a weight basis. The particles are roughly spherical.
- Comparative Examples 8-9 demonstrate that the sub-micron filler of the present disclosure does not behave predictably in all polyimides.
- CTE dramatically increases (greater than a factor of 2) with approximately 15 vol % of acicular of TiO 2 is introduced.
- BPDA//PPD prepolymer (69.3 g of a 17.5 wt % solution in anhydrous DMAC) was combined with 5.62 g of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) and the resulting slurry was stirred for 24 hours.
- FTL-110 acicular TiO 2
- a 6 wt % solution of pyromellitic anhydride (PMDA) was prepared by combining 0.9 g of PMDA (Aldrich 412287, Allentown, Pa.) and 15 ml of DMAC.
- the PMDA solution was slowly added to the prepolymer slurry to achieve a final viscosity of 653 poise.
- the formulation was stored overnight at 0° C. to allow it to degas.
- the formulation was cast using a 25 mil doctor blade onto a surface of a glass plate to form a 3′′ ⁇ 4′′ film.
- the glass was pretreated with a release agent to facilitate removal of the film from the glass surface.
- the film was allowed to dry on a hot plate at 80° C. for 20 minutes. The film was subsequently lifted off the surface, and mounted on a 3′′ ⁇ 4′′ pin frame.
- the mounted film was placed in a furnace (Thermolyne, F6000 box furnace).
- the furnace was purged with nitrogen and heated according to the following temperature protocol:
- the elongation to break is very low.
- the film is too brittle to be manufacturable.
- Example 2 The same procedure as described in Example 1 was used, except for the following differences. 33.99 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 191.9 grams of anhydrous DMAC. This slurry was mixed at high shear for approximately 10 to 15 minutes using Silverson Model L4RT high-shear mixer (Silverson Machines, LTD, Chesham Baucks, England) equipped with a square-hole, high-shear screen (with a blade speed of approximately 4000 rpm).
- Silverson Model L4RT high-shear mixer Silverson Model L4RT high-shear mixer (Silverson Machines, LTD, Chesham Baucks, England) equipped with a square-hole, high-shear screen (with a blade speed of approximately 4000 rpm).
- BPDA//PPD prepolymer (17.5 wt % solution in anhydrous DMAC) was combined with 69.335 grams of the slurry containing acicular TiO 2 . The resulting slurry was stirred for 24 hours.
- a 6 wt % solution of pyromellitic anhydride (PMDA) was prepared by combining 0.9 g of PMDA (Aldrich 412287, Allentown, Pa.) and 15 ml of DMAC.
- the PMDA solution was slowly added to the prepolymer slurry to achieve a final viscosity of 998 poise.
- the film was lifted off of the glass surface, and mounted on a 3′′ ⁇ 4′′ pin frame.
- the mounted film was placed in a furnace (Thermolyne, F6000 box furnace). The furnace was purged with nitrogen and heated according to the following temperature protocol:
- the solution was degassed under vacuum to remove air bubbles and then this solution was cast onto a letter size sheet of clear polyester film (approximately 3 mil thick).
- the polyamic acid coating on the polyester sheet was subsequently immersed in a bath containing a 1/1 v/v mixture of acetic anhydride and 3-picoline. After about 2 minutes, once the partially imidized coating began to separate from the polyester sheet, it was removed from the bath and pinned on a approximately 8′′ ⁇ 8′′ pin frame and allow to stand at room temperature in a lab hood for about 10-20 min. Next, the film on the pin frame was placed in a nitrogen purged oven and after purging at about 40° C.
- this oven was ramped to 320° C. over 70 minutes, held there for 30 minutes, then ramped to 450° C. over about 16 minutes, and held there for 4 minutes, in order to cure to polyimide. After cooling, the resulting 2.4 mil (61 micron) film was removed from the oven and pin frame.
- E′ Storage modulus (E′) by Dynamic Mechanical Analysis (TA Instruments, DMA-2980, 5° C./min) was measured by heating from room temperature to 500° C. at 5° C./min.
- CTE Coefficient of thermal expansion
- TMA-2940 Thermal Mechanical Analysis
- Comparative Example 11 demonstrates talc below about 5.5 volume percent does not behave predictably.
- Examples 5-9 demonstrate talc above about 5.5 volume percent significantly increase storage modulus and lower CTE while maintaining adequate elongation to break.
- Example 2 The same procedure as described in Example 1 was followed, with the following exceptions. 25 grams of talc (Flextalc 610, Kish Company, Inc., Mentor, Ohio) was mixed, at high shear, with 141 grams of anhydrous DMAC.
- talc Frextalc 610, Kish Company, Inc., Mentor, Ohio
- the PMDA//ODA prepolymer was blended with SF310 talc to achieve about a 50 wt % loading in the PI film. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10 Filler loading was approximately 50 wt % in the polyimide film. A 1.8 mil (46 micron) film was produced.
- Examples 10-11 demonstrate sub-micron fillers of the present disclosure in polyimide copolymers above 10 volume percent significantly increases storage modulus and lowers CTE when compared to unfilled copolymer in Comparative Example 13.
- Examples 12 and 13 demonstrate that a mixture of sub-micron fillers of the present disclosure significantly increase storage modulus and lower CTE when compared to unfilled polyimide in Comparative Example 10.
- a 168.21 g portion of a prepolymer of PMDA and ODA (prepared in DMAC at about 20.6%, approximately 50 poise viscosity) was blended together with 4.60 g SF310 talc and 20.46 g FTL-110 TiO 2 (45% slurry as described in Example 11 to achieve 10 wt % and 20 wt % loading respectively of the sub-micron fillers in the PI film (30 wt % total). Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 1.0 mil (25 micron) film was produced.
- Example 12 In a similar manner to Example 12, a 173.13 portion of the PMDA//ODA prepolymer was blended together with 9.45 g SF310 talc and 10.50 g FTL-110 TiO 2 (45% slurry as described in Example 11) to achieve 20 wt % and 10 wt % loading respectively of the sub-micron fillers in the PI film (30 wt % total). Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 2.2 mil (56 micron) film was produced.
- Examples 14 and 15 demonstrate a TiO 2 sub-micron filler of the present disclosure does not behave in the same manner in all polyimides in regards to CTE.
- High aspect ratio TiO 2 in the block copolymer of Example 14 significantly increases storage modulus while largely maintaining CTE compared to unfilled block copolymer of Comparative Example 13.
- Example 1 A similar procedure as described in Example 1 was used, except for the following differences. To prepare the prepolymer, 1.36 grams of PPD was combined with 110.0 grams of anhydrous DMAC and stirred, with gentle heating at 40° C. for approximately 20 minutes. 2.71 grams of PMDA was then added to this mixture to create the first block, which was stirred with gentle heating (35-40° C.) for approximately 2.5 hours. The mixture was allowed to cool to room temperature.
- High aspect ratio TiO 2 in the block copolymer of 15 significantly increases storage modulus while slightly decreasing CTE in the transverse direction compared to unfilled block copolymer of Comparative Example 13.
- Example 1 A similar procedure as described in Example 1 was used, except for the following differences. To prepare the prepolymer, 1.36 grams of PPD was combined with 113.0 grams of anhydrous DMAC and stirred, with gentle heating at 40° C. for approximately 20 minutes. 2.71 grams of PMDA was then added to this mixture to create the first block, which was stirred with gentle heating (35-40° C.) for approximately 2.5 hours. The mixture was allowed to cool to room temperature.
- Example 15 The same procedure was used as described in Example 15 was used, except that the acicular TiO 2 slurry was not added to the formulation. The final viscosity of the formulation was 1000-1200 poise.
- Example 16 demonstrates acicular TiO 2 sub-micron filler of the present disclosure does not behave in the same manner in all polyimides in regards to CTE. CTE increases compared to unfilled block copolymer in Comparative Example 14 but still remains in a desirable range.
- Examples 17-20 demonstrate block copolymer with talc above about 5.5 volume percent significantly increase storage modulus and maintain CTE while maintaining adequate elongation to break.
- a 186.87 g portion of the prepolymer prepared in Comparative Example 14 was blended with 13.13 g of SF-310 talc (Lot M685, Kish Co., Mentor, Ohio) in a similar manner to Comparative Example 11.
- This filler containing PAA solution was finished similarly as in Comparative Example 10 to yield a viscosity of ca. 2000 poise.
- the solution was pressured filtered through a 45 micron polypropylene screen and degassed under vacuum to remove air bubbles.
- a film was cast and cured similarly Comparative Example 10. Filler loading was approximately 30 wt % in the polyimide film. A 2.6 mil (66 micron) film was produced.
- a block prepolymer was prepared with a 70/30 ratio of ODA to PPD. Then in a similar manner to Comparative Example 11, a 171.75 g portion of this prepolymer was blended with 28.255 g SF310 talc to achieve about a 50 wt % loading in the PI film. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 1.5 mil (38 micron) film was produced.
- Comparative Example 15 demonstrates talc below about 5.5 volume percent does not significantly increase storage modulus.
- a block prepolymer was prepared with a 70/30 ratio of ODA to PPD. Then in a similar manner to Comparative Example 11, a 187.16 g portion of this prepolymer was blended with 3.48 g SF310 talc to achieve about a 10 wt % loading in the PI film. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 1.7 mil (43 micron) film was produced.
- Examples 21-24 illustrate the ability to include additional co-monomers in the compositions of the present invention and still achieve desirable properties.
- Example 21 In a similar manner to example 21, a 172.7 g portion of the prepolymer from Example 21 was blended with a 27.3 g portion of the TiO 2 slurry as described in example 16. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. Filler loading was approximately 30 wt % in the polyimide film. A 2.2 mil (56 micron) film was produced.
- a prepolymer was produced from 14.407 g PPD and 27.607 g PMDA in 378.1 g DMAC, followed by dilution with 401 g DMAC, then addition of 62.249 g ODA, and then 32.666 g of BPDA (which was allowed to dissolve/react), then 43.106 g of PMDA, followed by 41.0 g DMAC.
- a 186.8 g portion of this prepolymer was blended with 13.17 g SF310 talc (Lot M685, Kish Co., Mentor, Ohio) similar to Comparative Example 11, finished, cast and cured similarly to Comparative Example 10.
- a 1.7 mil (43 micron) film was produced.
- Example 23 In a similar manner to Example 23, a 172.7 g portion of the prepolymer from Example 23 was blended with a 27.3 g portion of the TiO 2 slurry as described in Example 16. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 2.3 mil (58 micron) film was produced.
- the following Examples demonstrate the impact on properties of a particulate (less than 3:1 aspect ratio) vs. a high aspect ratio (greater than 3:1 aspect) ratio platelet filler on the properties of a polyimide film.
- the platelet filler results in advantageously higher modulus and lower CTE at equivalent weight loadings. (Note that although the average particle sizes of these two fillers appear significantly different (platelet is significantly larger) via particle size analysis (Horiba LA-930 particle size analyzer), it is believed that the effect on properties is largely due to the filler shape, rather than any differences in average particle size).
- a portion of a polyamic acid prepolymer of PMDA and ODA (prepared in DMAC at about 20.6%, approximately 50 poise viscosity) was blended with particulate alumina filler (Martoxid MZS-1, Albermarle Corporation) in a Silverson (model L4RT-A) high shear mixer.
- the amount of alumina was chosen so as to ultimately yield a final polyimide film with a 40 wt % loading of alumina in polyimide.
- the polyamic acid was then further reacted (“finished”) to a viscosity of about 537 poise (Brookfield DV-II+ viscometer with a #LV5 spindle) by stepwise additions of a 6 wt % PMDA solution in DMAC with thorough mixing via a high torque mechanical mixer/stir blade.
- the polymer was subsequently cast onto a glass plate and heated to about 80° C. until a tack free film was obtained.
- the film was carefully peeled from the glass and placed on a pin frame and placed in a circulating air oven and the temperature slowly ramped to 320° C. and held there for 30 minute. Next, the film was removed from the 320° C. oven and place in a 400° C. air oven for 5 minutes.
- the polyimide film on the pin frame was removed from the oven and allowed to cool to room temperature. The film was then separated from the pin frame.
- E′ was measured as in Comparative Example 10.
- CTE was measured on the same instrument and at the same rate as Comparative Example 10 except that the sample was heated to 380° C., then cooled and reheated to 380° C.) and evaluated between 50-350° C. on the reheat.
- PMDA/ODA Talc 10 5.42 3.0 0.21 29.0 23.0 126/136 11 5 PMDA/ODA Talc 24 14.02 5.7 (25° C.) 25.4 6 PMDA/ODA Talc 30 18.08 5.8 0.78 24.0 23.0 178/181 7 PMDA/ODA Talc 30 18.08 5.4 0.86 21.0 19.0 171/148 8 PMDA/ODA Talc 50 34.00 8.9 1.20 11.0 13.0 56/73 9 PMDA/ODA Talc 60 43.60 11.1 1.96 8.0 9.0 42/56 10 PMDA//ODA/PPD Talc 30 18.08 7.1 1.17 13.0 17.0 63/41 Random (70/30) 11 PMDA//ODA/PPD acicular TiO 2, 30 12.64 6.3 0.87 18.0 25.0 27/45 Random (70/30) Comp.
- PMDA//ODA/PPD None 0 0.00 5.2 0.70 7.0 9.0 107/124 14 70/30 17 PMDA//ODA/PPD Talc 30 18.08 6.9 1.24 9.0 9.0 84/69 70/30 18 PMDA//ODA/PPD Talc 30 18.08 7.4 1.34 8.0 13.0 62/54 70/30 19 PMDA//ODA/PPD Talc 40 25.62 9.5 1.80 10.0 9.0 58/52 70/30 20 PMDA//ODA/PPD Talc 50 34.00 11.1 2.60 8.0 7.0 31/41 70/30 Comp.
- PMDA//ODA/PPD Talc 10 5.42 5.4 0.72 9.0 4.0 60/66 15 70/30 21 PMDA/BPDA// Talc 30 18.08 9.7 (25° C.) 1.42 (498° C.) 6.0 10.0 60/80 ODA/PPD 95/5//70/30 22 PMDA/BPDA// acicular TiO 2, 30 12.64 8.3 (25° C.) 1.26 (498° C.) 11.0 17.0 40/56 ODA/PPD 95/5//70/30 23 PMDA/BPDA// Talc 30 18.08 10.9 (25° C.) 0.88 (498° C.) 8.0 11.0 51/38 ODA/PPD 75/25//70/30 24 PMDA/BPDA/// acicular TiO 2, 30 12.64 9 (25° C.) 0.61 (498° C.) 11.0 20.0 32/68 ODA/PPD 75/25//70/30 Comp. PMDA/ODA particle Al 2 O 3 40 4.1 0.28 52.0 16 25 PMDA
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Cited By (7)
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US20130161065A1 (en) * | 2011-12-22 | 2013-06-27 | Hitachi Cable, Ltd. | Insulated wire and coil |
US9343197B2 (en) * | 2011-12-22 | 2016-05-17 | Hitachi Metals, Ltd. | Insulated wire and coil |
US20140065421A1 (en) * | 2012-09-03 | 2014-03-06 | Hitachi Metals, Ltd. | Insulated wire and coil using the same |
US10199137B2 (en) * | 2012-09-03 | 2019-02-05 | Hitachi Metals, Ltd. | Insulated wire and coil using the same |
US10487239B2 (en) | 2013-05-31 | 2019-11-26 | Kaneka Corporation | Insulating coating material and use of same |
US10665362B2 (en) | 2014-11-27 | 2020-05-26 | Kaneka Corporation | Insulating coating material having excellent wear resistance |
US10703860B2 (en) | 2014-11-27 | 2020-07-07 | Kaneka Corporation | Insulating coating material having excellent wear resistance |
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