US20120227790A1 - Assemblies comprising a polyimide film and an electrode, and methods relating thereto - Google Patents

Assemblies comprising a polyimide film and an electrode, and methods relating thereto Download PDF

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Publication number
US20120227790A1
US20120227790A1 US13/510,627 US201013510627A US2012227790A1 US 20120227790 A1 US20120227790 A1 US 20120227790A1 US 201013510627 A US201013510627 A US 201013510627A US 2012227790 A1 US2012227790 A1 US 2012227790A1
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Prior art keywords
dianhydride
assembly
polyimide
accordance
sub
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Abandoned
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US13/510,627
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English (en)
Inventor
Brian C. Auman
Meredith L. Dunbar
Tao He
Kostantinos Kourtakis
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EIDP Inc
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EI Du Pont de Nemours and Co
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Priority to US13/510,627 priority Critical patent/US20120227790A1/en
Publication of US20120227790A1 publication Critical patent/US20120227790A1/en
Abandoned legal-status Critical Current

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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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    • B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/256—Heavy metal or aluminum or compound thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256—Heavy metal or aluminum or compound thereof
    • Y10T428/257—Iron oxide or aluminum oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/259—Silicic material

Definitions

  • the present disclosure relates generally to assemblies comprising an electrode, and a polyimide film. More specifically, the polyimide film comprises a sub-micron filler and a polyimide polymer having a hybrid backbone structure.
  • a photovoltaic cell typically comprises a semiconductor junction device which converts light energy into electrical energy.
  • a typical photovoltaic cell can be described as a layered structure having four principal layers: (1) an absorber-generator (2) a collector-converter (3) a transparent electrical contact, and (4) an opaque electrical contact. When light comes in contact with the absorber-generator, the device generates a voltage differential between the two contacts which generally increases as the intensity of the light increases.
  • the absorber-generator is typically a layer of semiconductor material which absorbs light photons and, as a consequence, generates minority carriers. Typically, the light absorber layer captures photons and ejects electrons thus creating pairs of negatively charged carriers (electrons) and positively charged carriers (“holes”). If the light absorber layer is a p-type semiconductor, the electrons are minority carriers, and if it is n-type, the holes are minority carriers.
  • the photovoltaic device is a p-n junction or homojunction device. If the collector is comprised of a different semiconductor, the device is a heterojunction; and, if the collector is metal, the device is a Schottky junction.
  • the transparent contact is a conductive electrical contact which permits light to pass through to the absorber. It is typically either a continuous transparent sheet of conductive material or an open grid of opaque conductive material. If the transparent contact is on the same side of the photovoltaic device as the absorber, the device is referred to as being in the front wall configuration. If the transparent contact is on the opposite side, the device is said to be in the back wall configuration.
  • Thin film photovoltaic cells possess many potential advantages over crystalline silicon (wafer based) cells.
  • Photovoltaic cells employing thin films (of materials such as: i. a copper sulfide, copper zinc tin sulfide (CZTS), copper indium gallium diselenide or disulfide (CIGS), among others as an absorber; and ii. a cadmium sulfide or the like as a converter) may be a low cost alternative to silicon crystal based solar cells.
  • a high temperature deposition/annealing step is generally applied to improve light absorber layer performance.
  • the annealing step is typically conducted during manufacture and is typically applied to an assembly, comprising a substrate, a bottom electrode and the CIGS light absorber layer.
  • the substrate requires thermal and dimensional stability at the annealing temperature(s), and therefore conventional substrates have typically comprised metal or ceramic (conventional polymeric materials tend to lack sufficient thermal and dimensional stability, particularly at peak annealing temperatures).
  • ceramics, such as glass lack flexibility and can be heavy, bulky and subject to breakage. Metals can be less prone to such disadvantages, but metals tend to conduct electricity, which tends to also be a disadvantage, e.g., inhibits monolithic integration of CIGS photovoltaic cells.
  • the assemblies of the present disclosure comprise a polyimide film and a electrode supported by the polyimide film.
  • the polyimide film contains a sub-micron filler and a polyimide.
  • the polyimide is derived from:
  • At least one aromatic dianhydride component selected from the group consisting of rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and
  • At least one aromatic diamine component selected from the group consisting of rigid rod diamine, non-rigid rod diamine and combinations thereof.
  • the mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine based upon the total dianhydride component and total diamine component of the polyimide.
  • the sub-micron filler is less than 550 nanometers (as a numerical average) in at least one dimension, has an aspect ratio greater than 3:1, is less than the polyimide film thickness in all dimensions, and is present in an amount from 10 to 45 volume percent of the polyimide film.
  • the polyimide film has a thickness from 5 to 150 microns.
  • FIG. 1 is a sectional view of a thin-film solar cell fabricated on a polyimide film, constructed in accordance with the present disclosure.
  • Film is intended to mean a free-standing film or a (self-supporting or non self-supporting) coating.
  • film is used interchangeably with the term “layer” and refers to covering a desired area.
  • “Monolithic integration” is intended to mean integrating (either in series or in parallel) a plurality of photovoltaic cells to form a photovoltaic module, where the cells/module can be formed in a continuous fashion on a single film or substrate, e.g., a reel to reel operation.
  • Dianhydride as used herein is intended to include precursors or derivatives thereof, which may not technically be a dianhydride but would nevertheless functionally equivalent due to the capability of reacting with a diamine to form a polyamic acid which in turn could be converted into a polyimide.
  • Diamine as used herein is intended to include precursors or derivatives thereof, which may not technically be diamines but are nevertheless functionally equivalent due to the capability of reacting with a dianhydride to form a polyamic acid which in turn could be converted into a polyimide.
  • Polyamic acid as used herein is intended to include any polyimide precursor material derived from a combination of dianhydride and diamine monomers or functional equivalents thereof and capable of conversion to a polyimide.
  • Sub-micron is intended to describe particles having (as a numerical average) at least one dimension that is less than a micron.
  • “Chemical conversion” or “chemically converted” as used herein denotes the use of a catalyst (accelerator) or dehydrating agent (or both) to convert the polyamic acid to polyimide and is intended to include a partially chemically converted polyimide which is then dried at elevated temperatures to a solids level greater than 98%.
  • Aspect ratio is intended to mean a ratio of one dimension to another, such as a ratio of length to height.
  • the terms “comprises,” “comprising,” “includes,” “including,” “has,” “having” or any other variation thereof, are intended to cover a non-exclusive inclusion.
  • a method, process, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such method, process, article, or apparatus.
  • “or” refers to an inclusive or and not to an exclusive or. For example, a condition A or B is satisfied by any one of the following: A is true (or present) and B is false (or not present), A is false (or not present) and B is true (or present), and both A and B are true (or present).
  • the assemblies of the present disclosure have a polyimide film and an electrode.
  • the polyimide film serves as a support (substrate) upon which an electrode is formed.
  • the polyimide film comprises a polyimide and a sub-micron filler.
  • the polyimide has a hybrid backbone structure comprising rigid rod portions and non-rigid rod portions.
  • the sub-micron filler can generally be incorporated into polyimides of the present disclosure at relatively high loadings without causing the polyimide film to be unduly brittle while maintaining or decreasing coefficient of thermal expansion and increasing storage modulus.
  • the polyimides of the present disclosure are derived from the polymerization reaction of certain aromatic dianhydrides with certain aromatic diamines to provide a polymeric backbone structure that comprises both rigid rod portions and non-rigid rod portions.
  • the rigid rod portions arise from the polymerization of aromatic rigid rod monomers into the polyimide, and the non-rigid rod portions arise from the polymerization of non-rigid rod aromatic monomers into the polyimide.
  • Aromatic rigid rod monomers give a co-linear (about 180°) configuration to the polymer backbone, and therefore relatively little movement capability, when polymerized into a polyimide.
  • aromatic rigid rod diamine monomers examples include:
  • aromatic rigid rod dianhydride monomers examples include:
  • Monomers having a freedom of rotational movement or bending are intended to be deemed rigid rod monomers for purposes of this disclosure.
  • Non-rigid rod monomers for purposes of this disclosure are intended to mean aromatic monomers capable of polymerizing into a polyimide backbone structure having substantially greater freedom of movement compared to the rigid rod monomers described and exemplified above.
  • the non rigid rod monomers when polymerized into a polyimide, provide a backbone structure having a bend or otherwise are not co-linear along the polyimide backbone they create (e.g., are not about 180°).
  • Examples of non-rigid rod monomers in accordance with the present disclosure include any diamine and any dianhydride capable of providing a rotational or bending bridging group along the polyimide backbone.
  • rotational or bending bridging groups include —O—, —S—, —SO 2 —, —C(O)—, —C(CH 3 ) 2 —, —C(CF 3 ) 2 —, and —C(R,R′)— where R and R′ are the same or different and are any organic group capable of bonding to a carbon.
  • non-rigid rod diamines examples include: 4,4′-diaminodiphenyl ether (“ODA”), 2,2-bis-(4-aminophenyl)propane, 1,3-diaminobenzene (MPD), 4,4′-diaminobenzophenone, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenyl sulfide, 4,4′-diaminodiphenyl sulfone, 3,3′-diaminodiphenyl sulfone, bis-(4-(4-aminophenoxy)phenyl sulfone (BAPS), 4,4′-bis-(aminophenoxy)biphenyl (BAPB), 3,4′-diaminodiphenyl ether, 4,4′-diaminobenzophenone, 4,4′-isopropylidenedianiline, 2,2′-bis-(3-
  • non-rigid rod aromatic dianhydrides examples include 2,2′,3,3′-benzophenone tetracarboxylic dianhydride, 2,3,3′,4′-benzophenone tetracarboxylic dianhydride, 3,3′,4,4′-benzophenone tetracarboxylic dianhydride (BTDA), 2,2′,3,3′-biphenyl tetracarboxylic dianhydride, 2,3,3′,4′-biphenyl tetracarboxylic dianhydride, 4,4′-thio-diphthalic anhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride (DSDA), bis(3,4-dicarboxyphenyl) sulfoxide dianhydride, 4,4′-oxydiphthalic anhydride (ODPA), bis(3,4-dicarboxyphenyl) thio ether dianhydride, 2,2-Bis[4-(3,
  • the mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine based upon the total dianhydride component and diamine component of the polyimide.
  • the mole ratio of the dianhydride to diamine can be any sub-range within that broad ratio (e.g., 20-80 includes any range between and optionally including 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75 and 80, and 80-20 includes any range between and optionally including 80, 75, 70, 65, 60, 55, 45, 40, 35, 30, and 25).
  • the polyimide of the present disclosure is derived from substantially equal molar amounts of 4,4′-diaminodiphenyl ether (4,4′-ODA) non-rigid rod monomer, and pyromellitic dianhydride (PMDA), rigid rod monomer.
  • 4,4′-ODA 4,4′-diaminodiphenyl ether
  • PMDA pyromellitic dianhydride
  • at least 70 mole percent of the aromatic dianhydride component is pyromellitic dianhydride
  • at least 70 mole percent of the aromatic diamine component is 4,4′-diaminodiphenyl ether.
  • At least 70, 75, 80, 85, 90 or 95 mole percent of the aromatic dianhydride component is pyromellitic dianhydride (based upon total dianhydride content of the polyimide); and at least 70, 75, 80, 85, 90 or 95 mole percent of the aromatic diamine component is 4,4′-diaminodiphenyl ether (based upon total diamine content of the polyimide).
  • pyromellitic dianhydride based upon total dianhydride content of the polyimide
  • at least 70, 75, 80, 85, 90 or 95 mole percent of the aromatic diamine component is 4,4′-diaminodiphenyl ether (based upon total diamine content of the polyimide).
  • Such PMDA//4,4′ODA polyimides have been found to be particularly well suited for combination with the sub-micron fillers of the present disclosure, for improved properties at a relatively low cost.
  • the polyimide is derived from 100 mole percent pyromellitic dianhydride and 100 mole percent 4,4′-diaminodiphenyl ether.
  • the polyimide is a random copolymer derived from 4,4′-diaminodiphenyl ether and 1,4 diaminobenzene with pyromellitic dianhydride and 3,3′,4,4′-biphenyl tetracarboxylic dianhydride.
  • the polyimide is a random copolymer derived from 4,4′-diaminodiphenyl ether and 1,4 diaminobenzene with pyromellitic dianhydride.
  • At least 75 mole percent of the aromatic dianhydride component is pyromellitic dianhydride and 70 mole percent 4,4′-diaminodiphenyl ether and 30 mole percent 1,4 diaminobenzene as the aromatic diamine component.
  • the polyimide is a block copolymer.
  • a block copolymer is a polymer in which there are sequences of substantially one dianhydride/diamine combination along the polymer backbone as opposed to a completely random distribution of monomer sequences. Typically this is achieved by sequential addition of different monomers during the polyamic acid preparation.
  • the polyimide is block copolymer derived from 4,4′-diaminodiphenyl ether and 1,4-diaminobenzene with pyromellitic dianhydride.
  • the polyimide is a block copolymer is derived from 4,4′-diaminodiphenyl ether (4,4′-ODA) and 1,4-diaminobenzene (PPD) with pyromellitic dianhydride (PMDA) and 3,3′,4,4′-biphenyl tetracarboxylic dianhydride (BPDA).
  • the polyimide is a block copolymer consisting of substantially rigid blocks (PMDA reacted with PPD) and substantially more flexible blocks (PMDA reacted with ODA).
  • the block copolymer is derived from 10 to 40 mole percent blocks of pyromellitic dianhydride and 1,4-diaminobenzene and from 90 to 60 mole percent blocks of pyromellitic dianhydride and 4,4′-diaminodiphenyl ether.
  • the filler is a sub-micron (in at least one dimension) filler or a mixture of sub-micron fillers.
  • the polyimide film of the present disclosure comprises at least one sub-micron filler, the sub-micron filler:
  • Suitable sub-micron fillers are generally stable at temperatures above 300, 350, 400, 425 or 450° C., and in some embodiments do not significantly decrease the electrical insulation properties of the polyimide film.
  • the sub-micron filler is selected from a group consisting of needle-like fillers (acicular), fibrous fillers, platelet fillers and mixtures thereof.
  • the sub-micron filler is substantially non-aggregated.
  • the sub-micron filler can be hollow, porous, or solid.
  • the sub-micron filler of the present disclosure exhibits an aspect ratio of at least 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, or 15 to 1.
  • the sub-micron filler aspect ratio is 5:1 or greater.
  • the sub-micron filler aspect ratio is 10:1 or greater, and in another embodiment, the aspect ratio is 12:1 or greater.
  • a mixture of sub-micron fillers having aspect ratio of at least 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, or 15 to 1 may be used.
  • the sub-micron filler is selected from a group consisting of oxides (e.g., oxides comprising silicon, magnesium and/or aluminum), nitrides (e.g., nitrides comprising boron and/or silicon), carbides (e.g., carbides comprising tungsten and/or silicon) and combinations thereof.
  • the sub-micron filler is acicular titanium dioxide, talc, SiC fiber, platy Al 2 O 3 or mixtures thereof.
  • the sub-micron filler is less than (as a numerical average) 50, 25, 20, 15, 12, 10, 8, 6, 5, 4, or 2 microns in all dimensions.
  • carbon fiber and graphite can be used in combination with other sub-micron fillers to increase mechanical properties.
  • the loading of graphite, carbon fiber and/or electrically conductive fillers may need to be below the percolation threshold (perhaps less than 10 volume percent), since graphite and carbon fiber fillers can diminish electrical insulation properties and in some embodiments, diminished electrical insulation properties are not desirable.
  • the sub-micron filler is coated with a coupling agent. In some embodiments, the sub-micron filler is coated with an aminosilane coupling agent. In some embodiments, the sub-micron filler is coated with a dispersant. In some embodiments, the sub-micron filler is coated with a combination of a coupling agent and a dispersant. In some embodiments, the sub-micron filer is coated with a coupling agent, a dispersant or a combination thereof. Alternatively, the coupling agent and/or dispersant can be incorporated directly into the polyimide film and not necessarily coated onto the sub-micron filler. In some embodiments, the sub-micron filler comprises a acicular titanium dioxide, at least a portion of which is coated with an aluminum oxide.
  • the sub-micron filler is chosen so that it does not itself degrade or produce off-gasses at the desired processing temperatures. Likewise in some embodiments, the sub-micron filler is chosen so that it does not contribute to degradation of the polymer.
  • filler composites e.g. single or multiple core/shell structures
  • one oxide encapsulates another oxide in one particle.
  • polyimides can be filled with sub-micron filler of the present disclosure and thereby perform, at least in some ways, more similarly to more expensive polyimides, but at a much lower cost. More expensive monomers such as BPDA or fluorinated monomers can at least in part (or entirely) be replaced with less expensive monomers. In addition to expensive monomers, some polyimides are more difficult to process commercially, such as BPDA//PPD due to blistering. Lower production rates drive up the cost of the film. Additionally, polyimides derived from all rigid rod monomers may have low CTE and high modulus but, when filled, have low elongation.
  • submicron fillers that have an aspect ratio of 3:1 or greater can be incorporated at relatively high loading levels (10 to 45 volume percent) into less expensive, easily processable polyimides.
  • the sub-micron filler of the present disclosure tends to increase the storage modulus and decrease or approximately maintain the CTE of the polyimide film of the present disclosure with out causing the polyimide film to become unduly brittle.
  • the sub-micron filler of the present disclosure may not behave in the same manner in all polyimides. Surprisingly in a rigid rod polyimide (BPDA//PPD) the CTE may be greater than in unfilled rigid rod polyimide.
  • BPDA//PPD rigid rod polyimide
  • the sub-micron filler of the present disclosure when incorporated into the polyimides of the present disclosure, produce polyimide films having better properties (or balance of properties) compared to their conventional non-high aspect ratio (less than 3:1 aspect ratio) counterparts.
  • the polyimide film comprises a polyimide derived from 100 mole percent of pyromellitic dianhydride as the aromatic dianhydride component; and 100 mole percent 4,4′-diaminodiphenyl ether as the aromatic diamine component and the sub-micron filler is acicular Titanium dioxide, talc or mixture thereof.
  • the polyimide is a homopolymer of pyromellitic dianhydride and 4,4′-diaminodiphenyl ether.
  • the polyimide film comprises a polyimide wherein the polyimide is block copolymer derived from: 10 to 40 mole % blocks of pyromellitic dianhydride and 1,4 diaminobenzene; from 90 to 60 mole % blocks of pyromellitic dianhydride and 4,4′-diaminodiphenyl ether and the sub-micron filler is acicular Titanium dioxide, talc or mixture thereof.
  • the above described polyimide film of the present disclosure is well suited for use as a photovoltaic device substrate.
  • the properties of the polyimide film of the present disclosure are well adapted for use in a roll-to-roll process, in which deposition of additional layers in the manufacture of photovoltaic cells can be effected on a continuous web of the polyimide film.
  • roll to roll it is meant that the process be fed with a roll of flexible substrate (polyimide film) and that the process comprise a take up roll around which is wound the completed (or substantially completed) flexible solar cell.
  • the invention contemplates that the flexible substrate (polyimide film) may travel in both directions in the roll to roll configuration.
  • the sub-micron filler will substantially maintain (within 80, 70. 60, 50, 40, 30, 20, 10, 5, 4, 3, 2, or 1 percent, plus or minus) the coefficient of thermal expansion (CTE) while improving mechanical and thermal properties.
  • CTE coefficient of thermal expansion
  • the polyimide films of the present disclosure have an in-plane CTE in a range between (and optionally including) any two of the following: 1, 5, 10, 15, 20, 25, 30 and 35 ppm/° C., where the in-plane coefficient of thermal expansion (CTE) is measured between 60° C. (or 50° C.) and 350° C.
  • CTE in-plane coefficient of thermal expansion
  • Some unfilled block or random copolymers of the present disclosure can have a relatively low CTE.
  • sub-micron fillers of the present disclosure have little impact on a block copolymer CTE.
  • the sub-micron fillers of the present disclosure may increase the CTE of block or random copolymers having a low CTE but the CTE is still maintained in a desirable range.
  • the thickness of a polyimide film can also impact CTE, where thinner films tend to give a lower CTE (and thicker films, a higher CTE), and therefore, film thickness can be used to fine tune polyimide film CTE, depending upon any particular application selected.
  • the polyimide film of the present disclosure has a thickness in a range between (and optionally including) any of the following thicknesses (in microns): 5, 6, 8, 10, 12, 15, 20, 25, 50, 75, 100, 125 and 150 microns.
  • Monomers and sub-micron fillers within the scope of the present disclosure can also be selected or optimized to fine tune CTE within the above range. Ordinary skill and experimentation may be necessary in fine tuning any particular CTE of the polyimide film of the present disclosure, depending upon the particular application.
  • the in-plane CTE of the polyimide film can be obtained by thermomechanical analysis utilizing a TA Instruments TMA-2940 run at 10° C./min, up to 400° C., then cooled and reheated to 400° C., with the CTE in ppm/° C. obtained during the reheat scan between 50° C. and 350° C.
  • the in-plane CTE of the film can be obtained by Thermal Mechanical Analysis (TA Instruments, TMA-2940, heat 10° C./min, up to 460° C., then cooled and reheat to 500° C.) was evaluated between 50-350° C. on the reheat.
  • the in-plane CTE of the film can be obtained by Thermal Mechanical Analysis (TA Instruments, TMA-2940, heat 10° C./min, up to 380° C., then cooled and reheated to 380° C.) and evaluated between 50-350° C. on the reheat.
  • Thermal Mechanical Analysis TA Instruments, TMA-2940, heat 10° C./min, up to 380° C., then cooled and reheated to 380° C.
  • the sub-micron filler increases the storage modulus above the glass transition temperature (Tg) of the polyimide. In some embodiments, the sub-micron filler of the present disclosure increases the storage modulus at 25° C. at least 20, 22, 24, 26, 28 or 30% compared to sub-micron filler having an aspect ratio less than 3:1. In some embodiments, the sub-micron filler of the present disclosure increases the storage modulus at 480° C. to 500° C. at least 40, 42, 44 or 46% compared to sub-micron filler having an aspect ration less than 3:1. In some embodiments, the sub-micron filler of the present disclosure increases the storage modulus at 25° C. at least 38, 40, 42, 44 or 46% compared to unfilled polyimide. In some embodiments, the sub-micron filler of the present disclosure increases the storage modulus at 480° C. to 500° C. at least 52, 53, 54 or 55% compared to unfilled polyimide.
  • Tg glass transition temperature
  • the tensile elongation remains acceptable when greater than 10 volume percent of the sub-micron filler is used. In some embodiments, the tensile elongation remains acceptable when greater than 30 volume percent of the sub-micron filler is used. In another embodiment, the tensile elongation remains acceptable when greater than 40 volume percent of the sub-micron filler is used.
  • Polyimide films of the present disclosure can be made by methods well known in the art.
  • the polyimide film can be produced by combining the above monomers together with a solvent to form a polyamic acid (also called a polyamide acid solution).
  • the dianhydride and diamine components are typically combined in a molar ratio of aromatic dianhydride component to aromatic diamine component of from 0.90 to 1.10. Molecular weight can be adjusted by adjusting the molar ratio of the dianhydride and diamine components.
  • a polyamic acid casting solution is derived from the polyamic acid solution.
  • the polyamic acid casting solution comprises the polyamic acid solution combined with conversion chemicals, such as: (i) one or more dehydrating agents, such as, aliphatic acid anhydrides (acetic anhydride, etc.) and aromatic acid anhydrides; or (ii) one or more catalysts, such as, aliphatic tertiary amines (triethylamine, etc.), aromatic tertiary amines (dimethylaniline, etc) and heterocyclic tertiary amines (pyridine, picoline, isoquinoline, etc).
  • conversion chemicals such as: (i) one or more dehydrating agents, such as, aliphatic acid anhydrides (acetic anhydride, etc.) and aromatic acid anhydrides; or (ii) one or more catalysts, such as, aliphatic tertiary amines (triethylamine, etc.), aromatic tertiary
  • the anhydride dehydrating material is often used in a molar excess of the amount of amide acid groups in the copolyamic acid.
  • the amount of acetic anhydride used is typically about 2.0-3.0 moles per equivalent of amide acid.
  • a comparable amount of tertiary amine catalyst is used.
  • the polyamic acid is dissolved in an organic solvent at a concentration from about 5 weight percent up to and including 40 weight percent. In one embodiment, the polyamic acid is dissolved in an organic solvent at a concentration of about 5, 10, 15, 20, 25, 30, 35 or 40 weight percent.
  • suitable solvents include: formamide solvents (N,N-dimethylformamide, N,N-diethylformamide, etc.), acetamide solvents (N,N-dimethylacetamide, N,N-diethylacetamide, etc.), pyrrolidone solvents (N-methyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, etc.), phenol solvents (phenol, o-, m- or p-cresol, xylenol, halogenated phenols, catechol, etc.), hexamethylphosphoramide and gamma-butyrolactone. It is desirable to use one of these solvents or mixtures thereof.
  • the prepolymer can be prepared and combined with the sub-micron filler (dispersion or colloid thereof) using numerous variations to form the polyimide film of this disclosure.
  • “Prepolymer” is intended to mean a lower molecular weight polymer, typically made with a slight stoichiometric excess (about 2-4%) of diamine monomer (or excess dianhydride monomer). Increasing the molecular weight (and solution viscosity) of the prepolymer can be accomplished by adding incremental amounts of additional dianhydride (or additional diamine, in the case where the dianhydride monomer is originally in excess in the prepolymer) in order to approach a 1:1 stoichiometric ratio of dianhydride to diamine.
  • the sub-micron filler (dispersion or colloid thereof) can be added at several points in the polyimide film preparation.
  • the colloid or dispersion is incorporated into a prepolymer to yield a Brookfield solution viscosity in the range of about 50-100 poise at 25° C.
  • the colloid or dispersion can be combined with the monomers directly, and in this case, polymerization occurs with the nanocolloid present during the reaction.
  • the monomers may have an excess of either monomer (diamine or dianhydride) during this “in situ” polymerization.
  • the monomers may also be added in a 1:1 ratio.
  • the polyamic acid casting solution can then be cast or applied onto a support, such as an endless belt or rotating drum.
  • the polyamic acid contain conversion chemical reactants.
  • the solvent-containing film can be converted into a self-supporting film by baking at an appropriate temperature (thermal curing) to remove solvent or baking together with the chemical conversion reactants (chemical curing).
  • the film can then be separated from the support, oriented such as by tentering, with continued thermal curing to provide a polyimide film.
  • film smoothness is desirable, since surface roughness: i. can interfere with the functionality of the layer or layers deposited on the polyimide film of the present disclosure, ii. can increase the probability of electrical or mechanical defects, and iii. can diminish property uniformity along the polyimide film.
  • the sub-micron filler (and any other discontinuous domains) are sufficiently dispersed during polyimide film formation, such that the sub-micron filler (and any other discontinuous domains) are sufficiently between the surfaces of the polyimide film upon polyimide film formation to provide a final polyimide film having an average surface roughness (Ra) of less than 1000, 750, 500 or 400 nanometers.
  • Surface roughness as provided herein can be determined by optical surface profilometry to provide Ra values, such as, by measuring on a Veeco Wyco NT 1000 Series instrument in VSI mode at 25.4 ⁇ or 51.2 ⁇ utilizing Wyco Vision 32 software.
  • the polyamic acid (and casting solution) can further comprise any one of a number of additives, such as processing aids (e.g., oligomers), antioxidants, light stabilizers, flame retardant additives, anti-static agents, heat stabilizers, ultraviolet absorbing agents, fillers or various reinforcing agents.
  • processing aids e.g., oligomers
  • antioxidants e.g., oligomers
  • light stabilizers e.g., oligomers
  • flame retardant additives e.g., anti-static agents
  • heat stabilizers e.g., ultraviolet absorbing agents
  • fillers e.g., fillers or various reinforcing agents.
  • alkoxy silane coupling agent (or any conventional, nonconventional, presently known or future discovered coupling agent) can be added during the process by pretreating the sub-micron filler prior to formulation.
  • Alkoxysilane coupling agents can also be added during the “in situ” polymerization by combining the fillers and monomers with the alkoxysilane, generally so long as the coupling agent does not interfere with the polymerization reaction.
  • the dianhydride can be contacted with the sub-micron filler. While not intending to be bound to any particular theory or hypothesis, it is believed such contact between the dianhydride and the sub-micron filler can functionalize the sub-micron filler with the dianhydride prior to further reaction with the monomers or prepolymer.
  • a filled polyamic acid composition is generally cast into a film, which is subjected to drying and curing (chemical and/or thermal curing) to form a filled polyimide film. Any conventional or non-conventional method of manufacturing filled polyimide films can be used in accordance with the present disclosure. The manufacture of filled polyimide films in general is well known and need not be further described here.
  • the polyimide used in polyimide film of the present disclosure has a high glass transition temperature (Tg) of greater than 300, 310, 320, 330, 340, 350, 360, 370 380, 390 or 400° C.
  • Tg glass transition temperature
  • a high Tg generally helps maintain mechanical properties, such as storage modulus, at high temperatures.
  • electrically insulating fillers may be added to modify the electrical properties of the polyimide film.
  • filtering can be done at any stage of the polyimide film manufacture, such as, filtering solvated filler before or after it is added to one or more monomers and/or filtering the polyamic acid, particularly when the polyamic acid is at low viscosity, or otherwise, filtering at any step in the manufacturing process that allows for filtering.
  • such filtering is conducted at the minimum suitable filter pore size or at a level just above the largest dimension of the selected filler material.
  • the sub-micron filler is subjected to intense dispersion energy, such as agitation and/or high shear mixing or media milling or other dispersion techniques, including the use of dispersing agents, when incorporated into the film (or incorporated into a polyimide precursor) to inhibit unwanted agglomeration above the desired maximum filler size or to break up aggregates which may be originally present in the sub-micron filler.
  • intense dispersion energy such as agitation and/or high shear mixing or media milling or other dispersion techniques, including the use of dispersing agents
  • a single layer film can be made thicker in an attempt to decrease the effect of defects caused by unwanted (or undesirably large) discontinuous phase material within the film.
  • multiple layers of polyimide may be used to diminish the harm of any particular defect (unwanted discontinuous phase material of a size capable of harming desired properties) in any particular layer, and generally speaking, such multilayers will have fewer defects in performance compared to a single polyimide layer of the same thickness.
  • Using multiple layers of polyimide films can diminish or eliminate the occurrence of defects that may span the total thickness of the film, because the likelihood of having defects that overlap in each of the individual layers tends to be extremely small. Therefore, a defect in any one of the layers is much less likely to cause an electrical or other type failure through the entire thickness of the film.
  • the polyimide film comprises two or more polyimide layers. In some embodiments, the polyimide layers are the same. In some embodiments, the polyimide layers are different. In some embodiments, the polyimide layers independently may comprise a thermally stable filler, reinforcing fabric, inorganic paper, sheet, scrim or combinations thereof. Optionally, 0-55 weight percent of the film also includes other ingredients to modify properties as desired or required for any particular application.
  • the polyimide films used in the assemblies of the present disclosure resist shrinkage or creep (even under tension, such as, reel to reel processing) within a broad temperature range, such as, from about room temperature to temperatures in excess of 400° C., 425° C. or 450° C.
  • the polyimide film changes in dimension by less than 1, 0.75, 0.5, or 0.25 percent when subjected to a temperature of 460° C. for 30 minutes while under a stress in a range from 7.4-8.0 MPa (megapascals).
  • the polyimide films have sufficient dimensional and thermal stability to be a viable alternative to metal or ceramic support materials.
  • the polyimide film has improved adherence to the electrode.
  • assembly of the present disclosure further comprises a light absorber layer where the electrode is between the light absorber layer and the polyimide film, and the electrode is in electrical communication with the light absorber layer.
  • the light absorber layer is a semiconductive material (semiconductor).
  • the light absorber layer is amorphous silicon or microcrystalline silicon.
  • the light absorber layer is a CIGS/CIS light absorber layer. “CIGS/CIS” is intended to mean i. a copper indium gallium di-selenide composition; ii.
  • the light absorber layer is II-VI ternary alloy semiconductors (CdZnTe, HgCdTe, HgZnTe, HgZnSe).
  • the light absorber layer is CuZnSnS 4 or CuZnSnSe 4 . Additional useful light absorber layers are, but not limited to:
  • the electrode metals are typically deposited by sputtering.
  • the electrode is flexible.
  • the light absorber layer can be deposited by sputtering or other physical vapor deposition (PVD) methods known in the art for this purpose, such as close space sublimation (CSS), vapor transport deposition (VTD), evaporation, close-space vapor transport (CSVT) or similar PVD method or by chemical vapor deposition (CVD) methods.
  • the light absorber layer can be deposited, typically at temperatures of about 400° C. This is particularly advantages for CIGS systems, where a high temperature deposition/annealing step is generally applied to improve light absorber layer performance.
  • the polyimide film can also be coated on both sides with the electrode metal even if only one metal side is used as the electrode on which the light absorber layer is deposited.
  • the polyimide film can be reinforced with thermally stable, inorganic: fabric, paper (e.g., mica paper), sheet, scrim or combinations thereof.
  • the polyimide film of the present disclosure has adequate electrical insulation properties to allow multiple CIGS/CIS photovoltaic cells to be monolithically integrated into a photovoltaic module.
  • the assembly further comprises a plurality of monolithically integrated CIGS/CIS photovoltaic cells.
  • the polyimide films of the present disclosure provide:
  • the polyimide films used in the assemblies of the present disclosure should have high thermal stability so the films do not substantially degrade, lose weight, have diminished mechanical properties, or give off significant volatiles, e.g., during the light absorber layer deposition and/or annealing process in a CIGS/CIS application of the present disclosure.
  • the polyimide film should be thin enough to not add excessive weight to the photovoltaic module, but thick enough to provide high electrical insulation at operating voltages, which in some cases may reach 400, 500, 750 or 1000 volts or more.
  • the polyimide films used in the assemblies of the present disclosure should have good adhesion to the electrode.
  • polyimide films used in the assemblies of the present disclosure a low CTE can be obtained to more closely match those of the semiconductor layer deposited thereon.
  • the filler increases the storage modulus above the glass transition temperature (Tg) of the polyimide film.
  • Tg glass transition temperature
  • the addition of filler typically allows for the retention of mechanical properties at high temperatures and can improve handling characteristics.
  • the crystallinity and amount of crosslinking of the polyimide film can aid in storage modulus retention.
  • the polyimide film used in an assembly of the present disclosure has an isothermal weight loss of less than 2, 1.5, 1, 0.75, 0.5 or 0.3 percent at 500° C. over about 30 minutes in an inert environment, such as, in a vacuum or under nitrogen or other inert gas.
  • Polyimides used in the assemblies of the present disclosure have high dielectric strength, generally higher than many common inorganic insulators. In some embodiments, polyimides used in the assemblies of the present disclosure have a breakdown voltage equal to or greater than 10 V/micrometer.
  • interface layer between the electrode and light absorber layer.
  • Interface layer materials are known in the art and any suitable material such as ZnTe or similar materials that provide advantages in contacting absorber materials such as CdTe and/or CIGS which do not easily form ohmic contacts directly with metals.
  • the interface layer can be deposited by sputtering or by evaporation.
  • a window layer can be deposited on the light absorber layer by PVD methods.
  • the window layer(s) may comprise CdS, ZnS, CdZnS, ZnSe, In 2 S 3 , and/or any conventional or nonconventional, known or future discovered window layer material.
  • CdS is the window layer material and may be deposited by those techniques known in the art such as CSS or VTD.
  • a transparent conductive oxide is deposited on the window layer.
  • the TCO can be deposited by PVD methods, for example sputtering.
  • Common TCO's known in the art for this purpose include ZnO, ZnO:Al, ITO, SnO 2 and CdSnO 4 .
  • ITO is In 2 O 3 containing 10% of Sn.
  • the TCO thickness is about 200 nm to 2,000 nm, preferably about 500 nm.
  • Non-limiting examples include a top metal contact in a grid-like pattern for improved solar cell device performance and an encapsulating or protective material such as, but not limited to, ethylene vinyl acetate (EVA) or Tedlar®.
  • EVA ethylene vinyl acetate
  • Tedlar® Tedlar®
  • the thin-film solar cell 10 includes a flexible polyimide film 12 containing sub-micron filler as described and discussed above.
  • a bottom electrode 16 (comprising molybdenum, for example) is applied onto the flexible polyimide film 12 , such as, by sputtering, evaporation deposition or the like.
  • a semiconductor light absorber layer 14 (comprising Cu(In, Ga)Se 2 , for example) is deposited over the bottom electrode 16 .
  • the deposition of the semiconductor light absorber layer 14 onto the bottom electrode 16 and the flexible polyimide film 12 can be by any of a variety of conventional or non-conventional techniques including, but not limited to, casting, laminating, co evaporation, sputtering, physical vapor deposition, chemical vapor deposition, and the like.
  • Deposition processes for semiconductor light absorber layer 14 are well known and need not be further described here (examples of such deposition processes are discussed and described in U.S. Pat. No. 5,436,204 and U.S. Pat. No. 5,441,897).
  • the flexible polyimide film 12 is thin and flexible, i.e., approximately 8 microns to approximately 150 microns, in order that the thin-film solar cell 10 is lightweight, or the flexible polyimide film (substrate) 12 can be thick and rigid to improve handling of the thin-film solar cell 10 .
  • the CIGS light absorber layer 14 can be paired (e.g., covered) with a II/VI film 22 to form a photoactive heterojunction.
  • the II/VI film 22 is constructed from cadmium sulfide (CdS).
  • the II/VI films 22 can be constructed from other materials including, but not limited to, cadmium zinc sulfide (CdZnS) and/or zinc selenide (ZnSe) is also within the scope of the present disclosure.
  • a transparent conducting oxide (TCO) layer 23 for collection of current is applied to the II/VI film.
  • the transparent conducting oxide layer 23 is constructed from zinc oxide (ZnO), although constructing the transparent conducting oxide (“TCO”) layer 23 from other materials is also within the scope of the present disclosure.
  • a suitable grid contact 24 or other suitable collector is deposited on the upper surface of the TCO layer 23 when forming a stand-alone thin-film solar cell 10 .
  • the grid contact 24 can be formed from various materials but should have high electrical conductivity and form a good ohmic contact with the underlying TCO layer 23 .
  • the grid contact 24 is constructed from a metal material, although constructing the grid contact 24 from other materials including, but not limited to, aluminum, indium, chromium, or molybdenum, with an additional conductive metal overlayment, such as copper, silver, or nickel is within the scope of the present disclosure.
  • one or more anti-reflective coatings can be applied to the exposed surfaces of the grid contact 24 and the exposed surfaces of transparent conducting oxide layer 23 that are not in contact with the grid contacts.
  • an anti-reflective coating can be applied to only the exposed surfaces of transparent conducting oxide layer 23 that are not in contact with the grid contacts. The anti-reflective coating improves the collection of incident light by the thin-film solar cell 10 . As understood by a person skilled in the art, any suitable anti-reflective coating is within the scope of the present disclosure.
  • Examples 1-4 demonstrate that the sub-micron filler of the present disclosure at 10 volume percent or higher significantly increase storage modulus and lower CTE when compared to unfilled Comparative Example 1, while maintaining adequate elongation to break.
  • a 6 wt % solution of pyromellitic anhydride was prepared by combining 9.00 g of PMDA (Aldrich 412287, Allentown, Pa.) and 15 ml of DMAC.
  • the PMDA solution was slowly added to the prepolymer slurry to achieve a final viscosity of 1090 poise.
  • the formulation was stored overnight at 0° C. to allow it to degas.
  • the formulation was cast using a 25 mil doctor blade onto a surface of a glass plate to form a 3′′ ⁇ 4′′ film.
  • the cast film and the glass plate are then soaked in a solution containing 110 ml of 3-picoline (beta picoline, Aldrich, 242845) and 110 ml of acetic anhydride (Aldrich, 98%, P42053).
  • the film was subsequently lifted off of the glass surface, and mounted on a 3′′ ⁇ 4′′ pin frame.
  • the mounted film was placed in a furnace (Thermolyne, F6000 box furnace). The furnace was purged with nitrogen and heated according to the following temperature protocol:
  • thermomechanical analysis TMA
  • a TA Instrument model 2940 was used in tension mode. The instrument was purged with N 2 gas at 30-50 ml/min. A mechanical cooler was also used, which allowed temperature of the instrument to rapidly cool down between heating cycles.
  • the film was cut to a 2.0 mm width and 6-9 mm length (in MD or casting direction). The film was clamped lengthwise to a length of 7.5-9.0 mm. A preload tension was set for 5 grams of force. The film was then subjected to heating from 0° C. to 400° C. at 10° C./min rate, held at 400° C. for 3 minutes, and cooled back down to 0° C.
  • a second heating cycle to 400° C. was performed in the same way.
  • the calculations of thermal expansion coefficient in the unit of ⁇ m/m-° C. (or pp/° C.) from 60° C. to 400° C. were reported for the casting direction (MD) for the second heating cycle.
  • E′ Storage modulus
  • DMA Dynamic Mechanical Analysis
  • the static force in the length direction was 0.05 N with autotension of 125%.
  • the film was heated at frequency of 1 Hz from 0° to 500° C. at a rate of 3° C./min.
  • the storage modulus at 25° C. was measured to be 5757 MPa.
  • Tensile properties (including % elongation at break) of the films were measured on an Instron model 3345 instrument.
  • Crosshead gap (sample test length) was 1 inch (2.54 centimeters) and width was 0.5 inch (1.27 centimeters).
  • Crosshead speed was 1 inch (2.54 centimeters)/min.
  • Example 2 The same procedure as described in Example 1 was followed, with the following exceptions. 54.24 grams of the slurry containing acicular TiO 2 (FTL-110, 15 wt % in DMAC) was mixed with 136.15 grams of PMDA//ODA prepolymer (20 wt % in DMAC).
  • the material was finished with the PMDA solution to a viscosity of 899 poise.
  • Example 2 The same procedure as described in Example 1 was followed, with the following exceptions. 57.7 grams of the slurry containing acicular TiO 2 (FTL-110, 15 wt % in DMAC, high shear mixed) was combined with 63.3 grams of PMDA//ODA prepolymer (20.6 wt % in DMAC).
  • the material was finished with the PMDA solution to a viscosity of 1380 poise.
  • Example 2 The same procedure as described in Example 1 was followed, except for the following differences. 24.75 grams of SiC fibers (Silar® Silicon Carbide whiskers, beta form, Advanced Composites Materials, Greer, S.C., USA) was combined with 140.25 grams of anhydrous DMAC. The slurry was blended under high shear conditions, as described in Example 1.
  • SiC fibers Silicon Carbide whiskers, beta form, Advanced Composites Materials, Greer, S.C., USA
  • Example 2 The same procedure as described in Example 1 was followed, with the following exceptions.
  • the slurry containing the inorganic particles was not added to the PDMA//ODA prepolymer (prepolymer is 20 wt % in DMAC).
  • the material was finished with the PMDA solution to a viscosity of 890 poise.
  • Comparative Examples 2-5 demonstrate the sub-micron filler of the present disclosure present below 10 volume percent does not produce a significant increase in storage modulus (especially storage modulii at 500° C.) or decrease CTE (relatively minor improvement in storage modulus and CTE).
  • Example 2 A procedure similar to that described in Example 1 was used, except for the following differences. 24.08 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 135.92 grams of anhydrous DMAC, and the slurry mixed at high shear.
  • Example 2 A procedure similar to that described in Example 1 was used, except for the following differences. 24.08 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 135.92 grams of anhydrous DMAC, and the slurry mixed at high shear.
  • Example 2 A procedure similar to that described in Example 1 was used, except for the following differences. 24.08 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 135.92 grams of anhydrous DMAC, and the slurry mixed at high shear.
  • Example 2 A procedure similar to that described in Example 1 was used, except for the following differences. 24.08 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 135.92 grams of anhydrous DMAC, and the slurry mixed at high shear.
  • Comparative Example 6 demonstrates that filler having an aspect ratio less than 3:1 produces a film with lower storage modulus and higher CTE compared to Example 1 which has sub-micron filler with an aspect ratio of at least 3:1 at 15 volume percent. The film was brittle on the edges, and would not be viable in a commercial manufacturing process.
  • Example 2 The same procedure as described in Example 1 was followed, with the following exceptions. 33.84 grams of the slurry containing Du Pont Light Stabilized Titania, 210 (Du Pont, Wilmington, Del., 25 wt % in DMAC, high shear mixed) was combined with 86.2 grams of PMDA//ODA prepolymer (20.6 wt % in DMAC).
  • the material was finished with the PMDA solution to a viscosity of 1100 poise.
  • Du Pont Titania 210 is a fine white powder with a distribution of particles centered in the range of 130-140 nm on a weight basis. The particles are roughly spherical.
  • Comparative Examples 8-9 demonstrate that the sub-micron filler of the present disclosure does not behave predictably in all polyimides.
  • CTE dramatically increases (greater than a factor of 2) with approximately 15 vol % of acicular of TiO 2 is introduced.
  • BPDA//PPD prepolymer (69.3 g of a 17.5 wt % solution in anhydrous DMAC) was combined with 5.62 g of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) and the resulting slurry was stirred for 24 hours.
  • FTL-110 acicular TiO 2
  • a 6 wt % solution of pyromellitic anhydride (PMDA) was prepared by combining 0.9 g of PMDA (Aldrich 412287, Allentown, Pa.) and 15 ml of DMAC.
  • the PMDA solution was slowly added to the prepolymer slurry to achieve a final viscosity of 653 poise.
  • the formulation was stored overnight at 0° C. to allow it to degas.
  • the formulation was cast using a 25 mil doctor blade onto a surface of a glass plate to form a 3′′ ⁇ 4′′ film.
  • the glass was pretreated with a release agent to facilitate removal of the film from the glass surface.
  • the film was allowed to dry on a hot plate at 80° C. for 20 minutes. The film was subsequently lifted off the surface, and mounted on a 3′′ ⁇ 4′′ pin frame.
  • the mounted film was placed in a furnace (Thermolyne, F6000 box furnace).
  • the furnace was purged with nitrogen and heated according to the following temperature protocol:
  • the elongation to break is very low.
  • the film is too brittle to be manufacturable.
  • Example 2 The same procedure as described in Example 1 was used, except for the following differences. 33.99 grams of acicular TiO 2 (FTL-110, Ishihara Corporation, USA) was combined with 191.9 grams of anhydrous DMAC. This slurry was mixed at high shear for approximately 10 to 15 minutes using Silverson Model L4RT high-shear mixer (Silverson Machines, LTD, Chesham Baucks, England) equipped with a square-hole, high-shear screen (with a blade speed of approximately 4000 rpm).
  • Silverson Model L4RT high-shear mixer Silverson Model L4RT high-shear mixer (Silverson Machines, LTD, Chesham Baucks, England) equipped with a square-hole, high-shear screen (with a blade speed of approximately 4000 rpm).
  • BPDA//PPD prepolymer (17.5 wt % solution in anhydrous DMAC) was combined with 69.335 grams of the slurry containing acicular TiO 2 . The resulting slurry was stirred for 24 hours.
  • a 6 wt % solution of pyromellitic anhydride (PMDA) was prepared by combining 0.9 g of PMDA (Aldrich 412287, Allentown, Pa.) and 15 ml of DMAC.
  • the PMDA solution was slowly added to the prepolymer slurry to achieve a final viscosity of 998 poise.
  • the film was lifted off of the glass surface, and mounted on a 3′′ ⁇ 4′′ pin frame.
  • the mounted film was placed in a furnace (Thermolyne, F6000 box furnace). The furnace was purged with nitrogen and heated according to the following temperature protocol:
  • the solution was degassed under vacuum to remove air bubbles and then this solution was cast onto a letter size sheet of clear polyester film (approximately 3 mil thick).
  • the polyamic acid coating on the polyester sheet was subsequently immersed in a bath containing a 1/1 v/v mixture of acetic anhydride and 3-picoline. After about 2 minutes, once the partially imidized coating began to separate from the polyester sheet, it was removed from the bath and pinned on a approximately 8′′ ⁇ 8′′ pin frame and allow to stand at room temperature in a lab hood for about 10-20 min. Next, the film on the pin frame was placed in a nitrogen purged oven and after purging at about 40° C.
  • this oven was ramped to 320° C. over 70 minutes, held there for 30 minutes, then ramped to 450° C. over about 16 minutes, and held there for 4 minutes, in order to cure to polyimide. After cooling, the resulting 2.4 mil (61 micron) film was removed from the oven and pin frame.
  • E′ Storage modulus (E′) by Dynamic Mechanical Analysis (TA Instruments, DMA-2980, 5° C./min) was measured by heating from room temperature to 500° C. at 5° C./min.
  • CTE Coefficient of thermal expansion
  • TMA-2940 Thermal Mechanical Analysis
  • Comparative Example 11 demonstrates talc below about 5.5 volume percent does not behave predictably.
  • Examples 5-9 demonstrate talc above about 5.5 volume percent significantly increase storage modulus and lower CTE while maintaining adequate elongation to break.
  • Example 2 The same procedure as described in Example 1 was followed, with the following exceptions. 25 grams of talc (Flextalc 610, Kish Company, Inc., Mentor, Ohio) was mixed, at high shear, with 141 grams of anhydrous DMAC.
  • talc Frextalc 610, Kish Company, Inc., Mentor, Ohio
  • the PMDA//ODA prepolymer was blended with SF310 talc to achieve about a 50 wt % loading in the PI film. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10 filler loading was approximately 50 wt % in the polyimide film. A 1.8 mil (46 micron) film was produced.
  • Examples 10-11 demonstrate sub-micron fillers of the present disclosure in polyimide copolymers above 10 volume percent significantly increases storage modulus and lowers CTE when compared to unfilled copolymer in Comparative Example 13.
  • Examples 12 and 13 demonstrate that a mixture of sub-micron fillers of the present disclosure significantly increase storage modulus and lower CTE when compared to unfilled polyimide in Comparative Example 10.
  • a 168.21 g portion of a prepolymer of PMDA and ODA (prepared in DMAC at about 20.6%, approximately 50 poise viscosity) was blended together with 4.60 g SF310 talc and 20.46 g FTL-110 TiO 2 (45% slurry as described in example 11 to achieve 10 wt % and 20 wt % loading respectively of the sub-micron fillers in the PI film (30 wt % total). Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 1.0 mil (25 micron) film was produced.
  • Example 12 In a similar manner to Example 12, a 173.13 portion of the PMDA//ODA prepolymer was blended together with 9.45 g SF310 talc and 10.50 g FTL-110 TiO 2 (45% slurry as described in Example 11) to achieve 20 wt % and 10 wt % loading respectively of the sub-micron fillers in the PI film (30 wt % total). Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 2.2 mil (56 micron) film was produced.
  • Examples 14 and 15 demonstrate a TiO 2 sub-micron filler of the present disclosure does not behave in the same manner in all polyimides in regards to CTE.
  • High aspect ratio TiO 2 in the block copolymer of example 14 significantly increases storage modulus while largely maintaining CTE compared to unfilled block copolymer of Comparative Example 13.
  • Example 1 A similar procedure as described in Example 1 was used, except for the following differences. To prepare the prepolymer, 1.36 grams of PPD was combined with 110.0 grams of anhydrous DMAC and stirred, with gentle heating at 40° C. for approximately 20 minutes. 2.71 grams of PMDA was then added to this mixture to create the first block, which was stirred with gentle heating (35-40° C.) for approximately 2.5 hours. The mixture was allowed to cool to room temperature.
  • High aspect ratio TiO 2 in the block copolymer of 15 significantly increases storage modulus while slightly decreasing CTE in the transverse direction compared to unfilled block copolymer of Comparative Example 13.
  • Example 1 A similar procedure as described in Example 1 was used, except for the following differences. To prepare the prepolymer, 1.36 grams of PPD was combined with 113.0 grams of anhydrous DMAC and stirred, with gentle heating at 40° C. for approximately 20 minutes. 2.71 grams of PMDA was then added to this mixture to create the first block, which was stirred with gentle heating (35-40° C.) for approximately 2.5 hours. The mixture was allowed to cool to room temperature.
  • Example 15 The same procedure was used as described in Example 15 was used, except that the acicular TiO 2 slurry was not added to the formulation. The final viscosity of the formulation was 1000-1200 poise. CTE, E′ and % elongation at break were measured as in Example 1.
  • Example 16 demonstrates acicular TiO 2 sub-micron filler of the present disclosure does not behave in the same manner in all polyimides in regards to CTE. CTE increases compared to unfilled block copolymer in Comparative Example 14 but still remains in a desirable range.
  • Examples 17-20 demonstrate block copolymer with talc above about 5.5 volume percent significantly increase storage modulus and maintain CTE while maintaining adequate elongation to break.
  • a 2.6 mil (66 micron) film was produced.
  • Comparative Example 11 a 171.75 g portion of this prepolymer was blended with 28.255 g SF310 talc to achieve about a 50 wt % loading in the PI film. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 1.5 mil (38 micron) film was produced. CTE, E′ and % elongation at break were measured as in Comparative Example 10.
  • Comparative Example 15 demonstrates talc below about 5.5 volume percent does not significantly increase storage modulus.
  • a block prepolymer was prepared with a 70/30 ratio of ODA to PPD. Then in a similar manner to Comparative Example 11, a 187.16 g portion of this prepolymer was blended with 3.48 g SF310 talc to achieve about a 10 wt % loading in the PI film. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 1.7 mil (43 micron) film was produced.
  • the examples 21-24 illustrate the ability to include additional co-monomers in the compositions of the present invention and still achieve desirable properties.
  • Example 21 In a similar manner to Example 21, a 172.7 g portion of the prepolymer from Example 21 was blended with a 27.3 g portion of the TiO 2 slurry as described in Example 16. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. Filler loading was approximately 30 wt % in the polyimide film. A 2.2 mil (56 micron) film was produced.
  • a prepolymer was produced from 14.407 g PPD and 27.607 g PMDA in 378.1 g DMAC, followed by dilution with 401 g DMAC, then addition of 62.249 g ODA, and then 32.666 g of BPDA (which was allowed to dissolve/react), then 43.106 g of PMDA, followed by 41.0 g DMAC.
  • a 186.8 g portion of this prepolymer was blended with 13.17 g SF310 talc (Lot M685, Kish Co., Mentor, Ohio) similar to Comparative Example 11, finished, cast and cured similarly to Comparative Example 10.
  • a 1.7 mil (43 micron) film was produced.
  • Example 23 In a similar manner to Example 23, a 172.7 g portion of the prepolymer from Example 23 was blended with a 27.3 g portion of the TiO 2 slurry as described in Example 16. Finishing, filtration, casting and curing was similar to as described in Comparative Example 10. A 2.3 mil (58 micron) film was produced.
  • the following Examples demonstrate the impact on properties of a particulate (less than 3:1 aspect ratio) vs. a high aspect ratio (greater than 3:1 aspect ratio) platelet filler on the properties of a polyimide film.
  • the platelet filler results in advantageously higher modulus and lower CTE at equivalent weight loadings. (Note that although the average particle sizes of these two fillers appear significantly different (platelet is significantly larger) via particle size analysis (Horiba LA-930 particle size analyzer), it is believed that the effect on properties is largely due to the filler shape, rather than any differences in average particle size).
  • a portion of a polyamic acid prepolymer of PMDA and ODA (prepared in DMAC at about 20.6%, approximately 50 poise viscosity) was blended with particulate alumina filler (Martoxid MZS-1, Albermarle Corporation) in a Silverson (model L4RT-A) high shear mixer.
  • the amount of alumina was chosen so as to ultimately yield a final polyimide film with a 40 wt % loading of alumina in polyimide.
  • the polyamic acid was then further reacted (“finished”) to a viscosity of about 537 poise (Brookfield DV-II+ viscometer with a #LV5 spindle) by stepwise additions of a 6 wt % PMDA solution in DMAC with thorough mixing via a high torque mechanical mixer/stir blade.
  • the polymer was subsequently cast onto a glass plate and heated to about 80° C. until a tack free film was obtained.
  • the film was carefully peeled from the glass and placed on a pin frame and placed in a circulating air oven and the temperature slowly ramped to 320° C. and held there for 30 minutes. Next, the film was removed from the 320° C. oven and place in a 400° C. air oven for 5 minutes.
  • the polyimide film on the pin frame was removed from the oven and allowed to cool to room temperature. The film was then separated from the pin frame.
  • E′ was measured as in Comparative Example 10.
  • CTE was measured on the same instrument and at the same rate as Comparative Example 10 except that the sample was heated to 380° C., then cooled and reheated to 380° C.) and evaluated between 50-350° C. on the reheat.

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