US20080233717A1 - Soi wafer and manufacturing method thereof - Google Patents

Soi wafer and manufacturing method thereof Download PDF

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US20080233717A1
US20080233717A1 US12/035,588 US3558808A US2008233717A1 US 20080233717 A1 US20080233717 A1 US 20080233717A1 US 3558808 A US3558808 A US 3558808A US 2008233717 A1 US2008233717 A1 US 2008233717A1
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layer
wafer
soi wafer
support layer
oxide film
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Toshiaki Ono
Masataka Hourai
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Sumco Corp
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Sumco Corp
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Publication of US20080233717A1 publication Critical patent/US20080233717A1/en
Priority to US12/541,661 priority Critical patent/US20090305518A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the present invention relates to an SOI (Silicon on Insulator) wafer suitable for a process of manufacturing a semiconductor device in which an extremely-short thermal treatment is conducted for no more than 0.1 seconds at a maximum temperature of 1200° C. or more, and manufacturing method thereof.
  • SOI Silicon on Insulator
  • Such plastic deformation causes a defocus when the exposure is conducted in the process of manufacturing a device, and deteriorates the yield ratio.
  • the present invention takes the above circumstances into consideration, with an object of providing an SOI wafer which does not generate slip dislocation, even if laser annealing is conducted at a maximum temperature of 1200° C. or more for no more than 0.1 seconds.
  • the present invention is an SOI wafer used for a process of manufacturing a semiconductor device in which a laser annealing is conducted at a maximum temperature of 1200° C. for no more than 0.1 seconds, which includes an active layer, a support layer of a monocrystaline silicon, and an insulated oxide film layer between the active layer and the support layer, wherein light-scattering defect density measured by 90° light-scattering method at the depth region of 260 ⁇ m toward the support layer side from an interface between the insulated oxide film layer and the support layer is no more than 2 ⁇ 10 8 /cm 3 .
  • the light-scattering defect density measured by a 90° light-scattering method at the depth region of 260 ⁇ m toward the support layer side from the interface between the insulated oxide film layer and the support layer is no more than 2 ⁇ 10 8 /cm 3 , slip dislocation is not generated even if laser annealing is conducted at a maximum temperature of 1200° C. or more for no more than 0.1 seconds.
  • FIG. 1 is a drawing showing a pattern (pattern 1 ) of a heat treatment in the Examples.
  • FIG. 2 is a drawing showing a pattern (pattern 2 ) of a heat treatment in the Examples.
  • FIG. 3 is a drawing showing a pattern (pattern 3 ) of a heat treatment in the Examples.
  • FIG. 4 is a drawing showing a pattern (pattern 4 ) of a heat treatment in the Examples.
  • FIG. 5 is a sectional view showing a structure of an SOI wafer.
  • slip dislocation is not generated even if laser annealing is conducted at a maximum temperature of 1200° C. for no more than 0.1 seconds, when the light-scattering defect density measured by a 90° light-scattering method at the depth region of 260 ⁇ m toward the support layer side from the interface between the insulated oxide film layer and the support layer is no more than 2 ⁇ 10 8 /cm 3 .
  • the monocrystaline silicon wafer was heated at 1325° C. for 8 hours in a mixed atmosphere of Ar and O 2 .
  • a monocrystaline silicon layer (an active layer) in which silicon atoms were rearranged was formed on the surface of the monocrystaline silicon wafer.
  • the thickness of the active layer and the embedded SiO 2 layer were measured by using a transmission microscope, and the result was that the thickness of the active layer was 200 nm, and the thickness of the embedded SiO 2 layer was 125 nm.
  • the SOI wafer obtained above was subjected to a thermal treatment of pattern 3 shown in FIG. 3 .
  • the thermal treatment included the steps of: leaving the SOI wafer at 600° C. for 1 hour; heating it to 650° C. at a heating rate of 1° C./minute (50 minutes); leaving it at 650° C. for 2 hours; heating it to 950° C. at a heating rate of 5° C./minute (60 minutes); and leaving it at 950° C. for 12 hours.
  • the defect density near the interface between the insulated oxide film layer and the support layer induced by the thermal treatment was evaluated by a 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.).
  • the measurement of the light-scattering defect (light-scattering body) in the 90° light-scattering method was conducted by irradiating a light with a wavelength of 1.06 ⁇ m (near-infrared) and the output power of 100 mW from the upper surface of the silicon wafer, thereby detecting the 90° scattered light which was detected from a cleavage surface of the wafer.
  • the 90° scattered light was attenuated by passing through a filter.
  • the measured region was up to the depth of 260 ⁇ m from the interface between the insulated oxide film layer and the support layer, as shown in FIG. 5 .
  • the light-scattering defect density was measured at the 10 points determined randomly in the radial direction of the wafer, wherein 2 mm in the radial direction of the wafer was referred to as a point.
  • the result is shown in Table 1.
  • the light-scattering defect density was 1.1 ⁇ 1.0 8 /cm 3 .
  • the SOI wafer of Example 1 was subjected to an extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace in a condition of a maximum temperature of 1200° C. Then, it was checked using an X-ray topography method whether there was slip dislocation migrated to the surface of the wafer or not. As a result, the slip dislocation was not observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • a silicon wafer (oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)) sliced from a monocrystaline silicon ingot of 200 nm in diameter, which is the same as that of Example 1, was heated to 650° C., and then oxygen ions with the acceleration energy of 200 keV and the dose amount of 5 ⁇ 10 17 /cm 2 were implanted into the silicon wafer.
  • the monocrystaline silicon wafer was thermally treated at 1325° C. for 8 hours in a mixed atmosphere of Ar and O 2 , thereby producing an SOI wafer.
  • the thickness of the active layer and the embedded SiO 2 layer formed by the above thermal treatment were checked using a transmission microscope. As a result, the thickness of the active layer was 200 nm, and the thickness of the embedded SiO 2 layer was 125 nm.
  • the SOI wafer obtained in this way was subjected to a thermal treatment of pattern 3 shown in FIG. 3 , and then defect density induced by the thermal treatment near the interface between the support layer and the insulated oxide film layer of the SOI wafer after the thermal treatment was evaluated by a 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.). As shown in Table 1, the light-scattering defect density was 1.9 ⁇ 10 8 /cm 3 .
  • the SOI wafer of Example 2 was subjected to an extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace in the condition of a maximum temperature of 1300° C. Then, whether there was slip dislocation migrated to the surface of the wafer or not was checked using an X-ray topography method. As a result, slip dislocation was not observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • a silicon wafer (oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)) sliced from a monocrystaline silicon ingot of 200 nm in diameter, which is the same as that of Example 1, was heated to 650° C., and then oxygen ions with the acceleration energy of 200 keV and the dose amount of 5 ⁇ 10 17 /cm 2 were implanted into the silicon wafer.
  • the monocrystaline silicon wafer was thermally treated at 1325° C. for 8 hours in a mixed atmosphere of Ar and O 2 , thereby producing an SOI wafer.
  • the thickness of the active layer and the embedded SiO 2 layer formed by the above thermal treatment were checked using a transmission microscope. As a result, the thickness of the active layer was 200 nm, and the thickness of the embedded SiO 2 layer was 125 nm.
  • the SOI wafer was subjected to a thermal treatment at 1100° C. in a mixed atmosphere of Ar and O 2 , thereby performing a sacrificial oxidation.
  • the oxide film produced by performing the sacrificial oxidation was stripped in a fluorinated acid solution.
  • the thickness of the active layer was checked using a transmission microscope. As a result, the thickness of the active layer was 100 nm.
  • the SOI wafer obtained in this way was subjected to a thermal treatment of pattern 3 shown in FIG. 3 , and then defect density induced by the thermal treatment near the interface between the support layer and the insulated oxide film layer of the SOI wafer after the thermal treatment was evaluated by a 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.). As shown in Table 1, the light-scattering defect density was 1.8 ⁇ 10 8 /cm 3 .
  • the SOI wafer of Example 3 was subjected to a extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace of a maximum temperature of 1300° C. Then, it was checked using an X-ray topography method whether there was slip dislocation migrated to the surface of the wafer or not. As a result, slip dislocation was not observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • a silicon wafer (oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)) sliced from a monocrystaline silicon ingot of 200 nm in diameter, which is the same as that of Example 1, was thermally oxidized at 1100° C., thereby forming a oxide film of 300 nm. Then, hydrogen ions with the acceleration energy of 50 keV and the dose amount of 6 ⁇ 10 17 /cm 2 were implanted into the silicon wafer through the oxide film from the upper surface of the SOI wafer, thereby forming an ion-implanted layer in the wafer (the wafer used as an active layer).
  • the wafer used as the active layer was stuck with a silicon wafer (the wafer used as the support layer: oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)) sliced from a monocrystaline silicon ingot of 200 nm in diameter, which is the same as that of Example 1, through the oxide film. Then, they were subjected to a thermally stripping treatment at 600° C., thereby stripping the wafer used as the active layer into a thin film by using the ion-implanted layer as the boundary. Furthermore, a thermal treatment was performed at 1100° C.
  • the thickness of the active layer and the embedded SiO 2 layer of the SOI wafer were checked using a transmission microscope. As a result, the thickness of the active layer was 100 nm, and the thickness of the embedded SiO 2 layer was 150 nm.
  • the SOI wafer obtained above was then subjected to a thermal treatment of pattern 4 shown in FIG. 4 .
  • the thermal treatment included the steps of: leaving the SOI wafer at 800° C. for 4 hours; heating it to 950° C. at a heating rate of 1.5° C./minute (100 minutes); heating it to 1000° C. at a heating rate of 2° C./minute (25 minutes); and leaving it at 1000° C. for 8 hours.
  • Example 1 the defect density induced by the thermal treatment near the interface between the support layer and the insulated oxide film layer of the SOI wafer after the thermal treatment was evaluated by a 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.). As shown in Table 1, the light-scattering defect density was 1.7 ⁇ 10 8 /cm 3 .
  • the SOI wafer of Example 4 was subjected to an extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace in the condition of a maximum temperature of 1300° C. Then, it was checked using an X-ray topography method whether there was slip dislocation migrated to the surface of the wafer or not. As a result, slip dislocation was not observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • the thermal treatment included the steps of: leaving the SOI wafer at 600° C. for 1 hour; heating it to 650° C. at a heating rate of 1° C./minute (50 minutes); leaving it at 650° C. for 2 hours; heating it to 950° C. at a heating rate of 3° C./minute (100 minutes); and leaving it at 950° C. for 12 hours.
  • Example 1 the defect density induced by the thermal treatment near the interface between the support layer and the insulated oxide film layer of the SOI wafer after the thermal treatment was evaluated by a 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.). As shown in Table 1, the light-scattering defect density was 3.2 ⁇ 10 8 /cm 3 .
  • the SOI wafer of Comparative Example 1 was subjected to an extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace in the condition of a maximum temperature of 1200° C. Then, it was checked using an X-ray topography method whether there was slip dislocation migrated to the surface of the wafer or not. As a result, slip dislocation was observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • the SOI wafer (the thickness of the active layer was 100 nm, and the thickness of the embedded SiO 2 layer was 125 nm) obtained by the same condition as Example 3 was subjected to a thermal treatment of pattern 2 shown in FIG. 2 .
  • Example 1 the defect density induced by the thermal treatment near the interface between the support layer and the insulated oxide film layer of the SOI wafer after the thermal treatment was evaluated by 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.). As shown in Table 1, the light-scattering defect density was 3.5 ⁇ 10 8 /cm 3 .
  • the SOI wafer of Comparative Example 2 was subjected to an extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace in the condition of a maximum temperature of 1200° C. Then, it was checked using an X-ray topography method whether there was slip dislocation migrated to the surface of the wafer or not. As a result, a large amount of slip dislocation was observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • the SOI wafer (the thickness of the active layer was 200 nm, and the thickness of the embedded SiO 2 layer was 125 nm) obtained by the same condition as Example 1 was subjected to a thermal treatment of pattern 2 shown in FIG. 2
  • Example 1 the defect density induced by the thermal treatment near the interface between the support layer and the insulated oxide film layer of the SOI wafer after the thermal treatment was evaluated by a 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.). As shown in Table 1, the light-scattering defect density was 4.4 ⁇ 10 8 /cm 3 .
  • the SOI wafer of Comparative Example 3 was subjected to an extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace in the condition of a maximum temperature of 1300° C. Then, it was checked using a X-ray topography method whether there was slip dislocation migrated to the surface of the wafer or not. As a result, a large amount of slip dislocation was observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • a silicon wafer (oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)) sliced from a monocrystaline silicon ingot of 200 nm in diameter, which is the same as that of Example 1, was thermally oxidized at 1100° C., thereby forming a silicon dioxide film of 200 nm.
  • the wafer obtained above (the wafer used as the active layer), which was covered with a silicon dioxide film of 200 nm, was stuck at room temperature with a silicon wafer (the wafer used as the support layer: oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)) sliced from a monocrystaline silicon ingot of 200 nm in diameter, which is the same as that of Example 1 and not oxidized, thereby producing a laminated substrate (wafer). Then, they were subjected to thermally adhesive treatment at 1100° C. to strengthen the adhesion.
  • a silicon wafer the wafer used as the support layer: oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)
  • the wafer for the active layer was subjected to surface grinding or surface etching, thereby forming an active layer with the thickness of about 1000 nm. In this manner, a laminated SOI wafer was obtained.
  • the SOI wafer (the thickness of the active layer was 1000 nm, and the thickness of the insulated oxide film layer was 200 nm) was subjected to a thermal treatment of pattern 1 shown in FIG. 1 .
  • the thermal treatment included the steps of: leaving the SOI wafer at 700° C. for 4 hour; heating it to 950° C. at a heating rate of 5° C./minute (50 minutes); heating it to 1000° C. at a heating rate of 2° C./minute (25 minutes); and leaving it at 1000° C. for 8 hours.
  • Example 1 the defect density induced by the thermal treatment near the interface between the substrate layer and the insulated oxide film layer of the SOI wafer after the thermal treatment was evaluated by a 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.). As shown in Table 1, the light-scattering defect density was 3.2 ⁇ 10 9 /cm 3 .
  • the SOI wafer of Reference Example 1 was subjected to an extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace in the condition of a maximum temperature of 1200° C. Then, it was checked using an X-ray topography method whether there was slip dislocation migrated to the surface of the wafer or not. As a result, slip dislocation was not observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • a silicon wafer (oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)) sliced from a monocrystaline silicon ingot of 200 nm in diameter, which is the same as that of Example 1, was thermally oxidized at 1100° C., thereby forming a silicon dioxide film of 200 nm.
  • a silicon wafer a wafer for a support: oxygen concentration of 11.5 ⁇ 10 17 to 13.6 ⁇ 10 17 atoms/cm 3 (Old-ASTM)
  • the wafer used as the active layer was subjected to surface grinding or surface etching, thereby forming an active layer with the thickness of about 1000 nm. In this manner, a laminated SOI wafer was obtained.
  • the defect density induced by the thermal treatment near the interface between the support layer and the insulated oxide film layer of the SOI wafer after the thermal treatment was evaluated by a 90° light-scattering method, using MO-441 (manufactured by Mitsui Mining & Smelting Co. Ltd.). As shown in Table 1, the light-scattering defect density was 3.5 ⁇ 10 9 /cm 3 .
  • the SOI wafer of Reference Example 2 was subjected to an extremely-short thermal treatment (laser annealing) which was performed in a process of manufacturing a device, in a laser spike annealing furnace in the condition of a maximum temperature of 1300° C. Then, it was checked using an X-ray topography method whether there was slip dislocation migrated to the surface of the wafer or not. As a result, slip dislocation was not observed, as shown in Table 1.
  • laser annealing extremely-short thermal treatment
  • the SOI wafer of the present invention does not generate slip dislocation even if laser annealing is conducted at a maximum temperature of 1200° C. or more for no more than 0.1 seconds, since the light-scattering defect density measured by a 90° light-scattering method at the depth region of 260 ⁇ m toward the support layer side from the interface between the insulated oxide film layer and the support layer is no more than 2 ⁇ 10 8 /cm 3 . Therefore, it is consequently extremely useful industrially.

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US20090057811A1 (en) * 2007-08-28 2009-03-05 Sumco Corporation Simox wafer manufacturing method and simox wafer
CN115404551A (zh) * 2022-09-21 2022-11-29 常州时创能源股份有限公司 一种用于消除快速热处理过程中晶硅片位错缺陷的方法

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JP5239183B2 (ja) * 2007-03-20 2013-07-17 株式会社Ｓｕｍｃｏ Ｓｏｉウェーハ及びその製造方法
CN108987250B (zh) * 2017-06-02 2021-08-17 上海新昇半导体科技有限公司 衬底及其制作方法
CN109148317B (zh) * 2017-06-15 2022-05-10 沈阳硅基科技有限公司 用于激光裂片技术制备soi硅片的机台

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