US20070120258A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
US20070120258A1
US20070120258A1 US11/604,855 US60485506A US2007120258A1 US 20070120258 A1 US20070120258 A1 US 20070120258A1 US 60485506 A US60485506 A US 60485506A US 2007120258 A1 US2007120258 A1 US 2007120258A1
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United States
Prior art keywords
region
wiring
power supply
semiconductor device
supply wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US11/604,855
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English (en)
Inventor
Takahiro Hayashi
Shunsuke Toyoshima
Kazuo Sakamoto
Naozumi Morino
Kazuo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Assigned to RENESAS TECHNOLOGY CORP. reassignment RENESAS TECHNOLOGY CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MORINO, NAOZUMI, TOYOSHIMA, SHUNSUKE, HAYASHI, TAKAHIRO, SAKAMOTO, KAZUO, TANAKA, KAZUO
Publication of US20070120258A1 publication Critical patent/US20070120258A1/en
Priority to US12/253,850 priority Critical patent/US7714357B2/en
Priority to US12/727,811 priority patent/US8552561B2/en
Priority to US14/011,704 priority patent/US8946770B2/en
Priority to US14/591,817 priority patent/US9093283B2/en
Priority to US14/746,774 priority patent/US9343460B2/en
Priority to US15/099,574 priority patent/US9515019B2/en
Abandoned legal-status Critical Current

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    • H10D84/85—Complementary IGFETs, e.g. CMOS

Definitions

  • the present invention relates to a semiconductor device, and in particular, to an effective technique applicable to a semiconductor device with bonding pads.
  • Various semiconductor integrated circuits are formed on a semiconductor wafer made of, for example, a single crystal silicon and others and then the semiconductor device wafer is separated into semiconductor chips by dicing to manufacture chip-shaped semiconductor devices.
  • a semiconductor wafer made of, for example, a single crystal silicon and others and then the semiconductor device wafer is separated into semiconductor chips by dicing to manufacture chip-shaped semiconductor devices.
  • On the main surface of the semiconductor device a plurality of bonding pads acting as an external terminal are provided along the periphery of the semiconductor device.
  • Patent Document 1 sets forth a technique in which, in the semiconductor device with three or more wiring layers on which a plurality of rows of bonding pads are staggered along the periphery of a semiconductor chip, a first lead wiring electrically connecting the bonding pad in the inner row to an inner circuit is formed by one or more wiring layers including at least the wiring of the uppermost layer and a second lead wiring electrically connecting the bonding pad in the outer row to the inner circuit is formed by a plurality of wirings different from the first lead wiring.
  • Patent Document 2 discloses a technique in which, in a semiconductor device provided with a cell section and a buffer circuit formed to surround the cell section, a plurality of bonding pads are formed over the periphery of the buffer circuit and over the buffer circuit and staggered over the periphery of the buffer circuit and over the buffer circuit.
  • An input/output circuit is provided on each bonding pad and a power supply wiring is formed along the periphery of the semiconductor device.
  • the input/output circuit is constructed of various elements formed on a semiconductor substrate constituting the semiconductor device.
  • the input/output circuit is connected to the bonding pad and the power supply wiring according to need. Since the bonding pad is formed by the uppermost metallic layer, a wiring to be connected to elements constituting the input/output circuit needs drawing up to be connected to the metallic layer for the bonding pads. If the drawing-up portion is provided in the end of the input/output circuit forming region and the bonding pad is arranged further outside than the drawing-up portion, the planar dimension of the semiconductor device requires to be increased by the bonding pad.
  • the bonding pads on the side of the inner periphery can be arranged further inside than the aforementioned drawing-up portion, however, the bonding pads on the side of the outer periphery needs to be arranged further outside than the drawing-up portion, so that the planar dimension of the semiconductor device requires to be increased by the bonding pad on the side of the outer periphery. This becomes disadvantageous for downsizing the semiconductor device.
  • the power supply wiring and the bonding pad are formed by the metallic layer of the same layer, if the power supply wiring is arranged through a detour around the input/output circuit, the power supply wiring is reduced in width, which decreases current density. If the power supply wiring is increased in width to maintain the current density, which increases planar dimension. This also becomes disadvantageous for downsizing the semiconductor device.
  • the present invention has for its purpose to provide a technique capable of reducing dimension, or planar dimension, of the semiconductor device.
  • a first and a second power supply wiring pass over protective elements formed on the semiconductor substrate and electrically connected to bonding pads, a first wiring positioned under the first and the second power supply wiring and electrically connected to the protective elements is pulled out over the first and the second power supply wiring in the pulled-out region between the first and the second power supply wiring to be electrically connected to a first conductive layer for the bonding pads positioned over the first and the second power supply wiring.
  • the dimension (planar dimension) of a semiconductor device can be reduced.
  • FIG. 1 is a top view showing a semiconductor device according to one embodiment of the present invention.
  • FIG. 2 is a top view showing the principal elements of the semiconductor device according to one embodiment of the present invention.
  • FIG. 3 is a top view showing the principal elements of the semiconductor device according to one embodiment of the present invention.
  • FIG. 4 is a top view showing the principal elements of the semiconductor device according to one embodiment of the present invention.
  • FIG. 5 is a top view showing the principal elements of the semiconductor device according to one embodiment of the present invention.
  • FIG. 6 is a cross section showing the principal elements of the semiconductor device according to one embodiment of the present invention.
  • FIG. 7 is a cross section showing the principal elements of the semiconductor device according to one embodiment of the present invention.
  • FIG. 8 is a cross section showing the principal elements of the semiconductor device according to one embodiment of the present invention.
  • FIG. 9 is a cross section showing the principal elements of the semiconductor device according to one embodiment of the present invention.
  • FIG. 10 is a circuit diagram showing an input/output circuit of the semiconductor device according to one embodiment of the present invention.
  • FIG. 11 is a top view showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 12 is a top view showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 13 is a top view showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 14 is a cross section showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 15 is a cross section showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 16 is a circuit diagram showing an input/output circuit of the semiconductor device according to another embodiment of the present invention.
  • FIG. 17 is a top view showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 18 is a top view showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 19 is a top view showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 20 is a top view showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 21 is a cross section showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 22 is a cross section showing the principal elements of the semiconductor device according to another embodiment of the present invention.
  • FIG. 23 is a circuit diagram showing an input/output circuit of the semiconductor device according to another embodiment of the present invention.
  • FIG. 24 is a circuit diagram showing an input/output circuit of the semiconductor device according to another embodiment of the present invention.
  • hatching is sometimes omitted from a cross section to make it easily viewable.
  • hatching lines are sometimes drawn in a top view or perspective view to make views easily viewable.
  • FIG. 1 is a top view (entire top view) showing a semiconductor device 1 according to one embodiment of the present invention.
  • FIG. 1 is a top view, however, hatching is drawn in a power supply wiring 5 , a grounding wiring 6 , a grounding wiring 7 and a power supply wiring 8 to make them easily viewable.
  • the semiconductor device (semiconductor chip) 1 is formed in such a manner that various semiconductor integrated circuits and bonding pads 4 are formed on a semiconductor substrate (semiconductor wafer) made of, for example, a single crystal silicon and others and then the semiconductor substrate is separated into each chip-shaped semiconductor device (semiconductor chip) 1 by dicing. For this reason, the semiconductor device 1 is a semiconductor chip.
  • a core region (cell section and internal circuit forming region) 3 is arranged in the central portion of a main surface 2 of the semiconductor device 1 .
  • Various semiconductor integrated circuits (internal circuits) are formed in the core region 3 .
  • the core region 3 is configured by arranging a large number of basic cells constituted by combining a prescribed number of, for example, an n-channel MISFET and a p-channel MISFET in a matrix form. Connecting the MISFETs in the basic cells and the basic cells to each other based on a logic design realizes a desired logic function.
  • a plurality of bonding pads (pad electrodes, external terminals and external connecting terminals) 4 are arranged along the peripheral on the main surface 2 of the semiconductor device 1 .
  • the bonding pads 4 are capable of functioning as external terminals (external connecting terminals and input/output circuit terminals) of the semiconductor device 1 to establish an electrical connection to external devices.
  • the power supply wiring 5 and the grounding wiring 6 for the core region 3 are arranged outside the core region 3 on the main surface 2 of the semiconductor device 1 .
  • the grounding wiring 7 and the power supply wiring 8 for an input/output (I/O) are arranged further outside thereof.
  • the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 and the power supply wiring 8 extend along the periphery of the main surface 2 of the semiconductor device 1 , (that is to say, in the Y direction described later) and are arranged outside the core region 3 (on the side of the periphery of the main surface 2 of the semiconductor device 1 , that is, on the side of an end 2 a ).
  • the power supply wiring 5 and the grounding wiring 6 for the core region 3 are arranged inside the grounding wiring 7 and the power supply wiring 8 for input/output (on the inner side of main surface 2 of the semiconductor device 1 ).
  • the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 and the power supply wiring 8 are arranged in this order from inside to outside.
  • the power supply wiring 5 for the core region 3 is a wiring for supplying a power-supply electric potential (fixed electric potential and reference electric potential) to circuits and elements of the core region 3 .
  • the grounding wiring 6 for the core region 3 is a wiring for supplying a grounding electric potential to circuits and elements of the core region 3 .
  • the grounding wiring 7 is a wiring for supplying a grounding electric potential to an input/output circuit 11 described later.
  • the power supply wiring 8 is a wiring for supplying a power-supply electric potential (fixed electric potential and reference electric potential) to the input/output circuit 11 .
  • Turning on the power supply of the semiconductor device 1 applies a constant voltage across the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 and the power supply wiring 8 .
  • a grounding electric potential across the grounding wirings 6 and 7 and applies a power-supply electric potential (fixed electric potential and reference electric potential) different from each other across the power supply wirings 5 and 8 .
  • grounding electric potential across the grounding wirings. 6 and 7 It is more preferable to supply a grounding electric potential across the grounding wirings. 6 and 7 , but it is also possible to supply a non-grounding electric potential, or a power-supply electric potential (fixed electric potential and reference electric potential). At this point, at least a power-supply electric potential different from one to be applied across the power supply wiring 5 is applied across the grounding wiring 6 , and a power-supply electric potential different from one to be applied across the power supply wiring 8 is applied across the grounding wiring 7 . Therefore, not only the power supply wirings 5 and 8 but the grounding wirings 6 and 7 may be regarded as power supply wirings.
  • one of the grounding wiring 7 and the power supply wiring 8 may be regarded as a first power supply wiring (power supply wiring at a first electric potential) and the other may be regarded as a second power supply wiring (power supply wiring at a second electric potential different from the first electric potential).
  • one of the power supply wiring 5 and the grounding wiring 6 may be regarded as a third power supply wiring (power supply wiring at a third electric potential) and the other may be regarded as a fourth power supply wiring (power supply wiring at a fourth electric potential different from the third electric potential).
  • a plurality of the bonding pads 4 provided on the main surface 2 of the semiconductor device 1 are arranged in two rows along each side of the semiconductor device 1 .
  • the position of the bonding pads 4 is displaced by half pitch between the rows, in other words, the bonding pads 4 are staggered.
  • a plurality of the bonding pads 4 are arranged in two rows along each side of the semiconductor device 1 and the position of the bonding pads 4 is displaced by half pitch between the rows.
  • a first bonding pad 4 a near the end 2 a of the semiconductor device 1 and a second bonding pad 4 b positioned further inside the semiconductor device 1 than the first bonding pad 4 a are alternately arranged. Staggering the bonding pads 4 shortens an effective pitch of the bonding pad 4 , allowing more bonding pads to be formed on a semiconductor device of the same size, which enables the terminal of the semiconductor device to be increased in number.
  • FIGS. 2 to 5 are top views showing the principal elements of the semiconductor device 1 according to the present embodiment and illustrate the periphery of the semiconductor device 1 .
  • FIGS. 6 to 9 are cross sections showing the principal elements of the semiconductor device 1 according to the present embodiment.
  • FIG. 10 is a circuit diagram (equivalent circuit diagram) showing the input/output circuit 11 of the semiconductor device 1 according to the present embodiment.
  • FIGS. 2 to 5 show the same region.
  • FIG. 2 shows a planar layout of the input/output circuit 11 and a circuit 15 .
  • FIG. 3 corresponds to a figure in which the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 and the power supply wiring 8 are added to FIG. 2 .
  • FIG. 3 corresponds to a figure in which the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 and the power supply wiring 8 are added to FIG. 2 .
  • FIG. 3 corresponds to a figure in which the power supply wiring 5 , the grounding wiring
  • FIG. 4 corresponds to a figure in which the power supply wiring 5 , the grounding wiring 6 , a conductive layer 51 and the bonding pad 4 are added to FIG. 2 .
  • FIG. 5 shows a planar layout of the input/output circuit 11 , the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 , the power supply wiring 8 , the conductive layer 51 and the bonding pad 4 .
  • a cross section along line A-A in FIG. 2 corresponds to FIG. 6 .
  • a cross section along line B-B in FIG. 2 corresponds to FIG. 7 .
  • a cross section along line C-C in FIG. 2 corresponds to FIG. 8 .
  • a cross section along line D-D in FIG. 2 corresponds to FIG. 9 .
  • a plurality of the input/output circuits 11 are arranged along the periphery of the main surface 2 of the semiconductor device 1 .
  • the bonding pads 4 corresponding to the input/output circuits 11 are arranged in the vicinity thereof and electrically connected to the input/output circuits 11 respectively.
  • a plurality of the bonding pads 4 and of the input/output circuits 11 are so arranged as to surround the core region 3 therearound.
  • the input/output circuit 11 includes the n-channel MISFET Qn 1 (hereinafter referred to as “nMISFET Qn 1 ”) for output (for output control and input/output control), the p-channel MISFET Qp 1 (hereinafter referred to as “pMISFET Qp 1 ”) for output (for output control and input/output control) and resistance elements R 1 and R 2 for protection and diode elements D 1 and D 2 for protection.
  • the bonding pads 4 are electrically connected to the grounding wiring 7 and the power supply wiring 8 through the input/output circuit 11 .
  • the bonding pads 4 are electrically connected to the input/output circuit 11 and electrically connected to the grounding wiring 7 and the power supply wiring 8 through the input/output circuit 11 . Specifically, the bonding pads 4 are electrically connected to one of the source or the drain (the drain in this case) of the nMISFET Qn 1 through the resistance element R 1 and electrically connected to one of the source or the drain (the drain in this case) of the pMISFET Qp 1 through the resistance element R 2 .
  • the other of the source or the drain (the source in this case) of the nMISFET Qn 1 is electrically connected to the grounding wiring 7 for input/output and the other of the source or the drain (the source in this case) of the pMISFET Qp 1 is electrically connected to the power supply wiring 8 input/output.
  • the gate electrodes of the nMISFET Qn 1 and the pMISFET Qp 1 are electrically connected to the circuit 15 , or circuits or elements in the core region 3 .
  • the bonding pads 4 are electrically connected to the grounding wiring 7 via a diode D 1 and are electrically connected to the power supply wiring 8 via the diode D 2 .
  • the diodes D 1 and D 2 and the resistance elements R 1 and R 2 among the elements constituting the input/output circuit 11 are capable of functioning as elements for protection (protective element). For example, when a surge (ESD surge) is inputted into the bonding pads 4 , the resistance elements R 2 and R 2 prevent the surge from being inputted into the nMISFET Qn 1 and the pMISFET Qp 1 to pass it to the grounding wiring 7 or the power supply wiring 8 through the diodes D 1 or D 2 .
  • ESD surge ESD surge
  • the diodes D 1 and D 2 and the resistance elements R 1 and R 2 prevent the surge (ESD surge) from being inputted into the nMISFET Qn 1 and the pMISFET Qp 1 , which permits the nMISFET Qn 1 and the pMISFET Qp 1 to be protected.
  • the protective elements (the diodes D 1 and D 2 and the resistance elements R 1 and R 2 ) are electrically connected to the bonding pads 4 . These protective elements are formed on the semiconductor substrate 30 as discussed later.
  • the nMISFET Qn 1 and the pMISFET Qp 1 among the elements constituting the input/output circuit 11 are capable of functioning as elements for output control (for input/output control). For instance, turning on and off nMISFET Qn 1 and/or turning on and off the pMISFET Qp 1 allow the output (input/output) of the bonding pads 4 to be controlled.
  • a connection relationship between the nMISFET Qn 1 and the pMISFET Qp 1 shown in FIG. 10 is applied when the input/output circuit 11 acts as an output circuit and the bonding pad 4 acts as a bonding pad for outputting signals.
  • the bonding pad 4 acts as a bonding pad for inputting signals
  • a connection relationship between the nMISFET Qn 1 and the pMISFET Qp 1 can be changed from one in FIG. 10 .
  • the bonding pad 4 can be electrically connected to the gate of the nMISFET Qn 1 through the resistance element R 1 or to the gate of the pMISFET Qp 1 through the resistance element R 2 .
  • one of the source or the drain of the nMISFET Qn 1 may be electrically connected to the grounding wiring 7 one of the source or the drain of the pMISFET Qp 1 may be electrically connected to the power supply wiring 8 , the other of the source or the drain of the nMISFET Qn 1 and the other of the source or the drain of the p-channel MISFET Qp 1 may be electrically connected to the circuit 15 , or the circuits or elements of the core region 3 .
  • the present embodiment is applicable. For this reason, it is preferable that the present embodiment is applied when the bonding pad 4 is used for input/output or for inputting/outputting signals.
  • the nMISFET forming region 21 , the resistance element forming region 22 , the diode element forming region 23 , the pulling-out region 24 , the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 are arranged on the periphery of the main surface 2 of the semiconductor device 1 in this order in the direction from the inside (the inner side of the main surface 2 of the semiconductor device 1 ) to the periphery (the side of end 2 a of the main surface 2 of the semiconductor device 1 ), i.e., in the X-direction in FIGS. 2 to 6 .
  • the nMISFET forming region 21 , the resistance element forming region 22 , the diode element forming region 23 , the pulling-out region 24 , the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 are arranged in this order.
  • the nMISFET forming region 21 , the resistance element forming region 22 , the diode element forming region 23 , the pulling-out region 24 , the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 are arranged in this order in the direction (X-direction) intersecting (preferably orthogonal) with the direction (Y-direction) to which the grounding wiring 7 and the power supply wiring 8 extend.
  • the nMISFET forming region 21 is a region where a Metal Insulator Semiconductor Field Effect Transistor (MISFET) corresponding to the nMISFET Qn 1 is formed.
  • the resistance element forming region 22 is a region where a resistance element corresponding to the resistance element R 1 is formed.
  • the diode element forming region 23 is a region where a diode element corresponding to the diode D 1 is formed.
  • the diode element forming region 25 is a region where a diode element corresponding to the diode D 2 is formed.
  • the resistance element forming region 26 is a region where a resistance element corresponding to the resistance element R 2 is formed.
  • the pMISFET forming region 27 is a region where a MISFET corresponding to the pMISFET Qp 1 is formed.
  • the input/output circuit 11 is formed by the nMISFET forming region 21 (nMISFET Qn 1 ), the resistance element forming region 22 (resistance element R 1 ), the diode element forming region 23 (diode D 1 ), the diode element forming region 25 (diode D 2 ), the resistance element forming region 26 (resistance element R 2 ) and the pMISFET forming region 27 (pMISFET Qp 1 ).
  • the input/output circuit 11 is provided on each bonding pad 4 .
  • the circuit 15 is a circuit region where, for example, a level shifter, an input/output (I/O) control logic section and others are formed and is provided further inside the input/output circuit 11 on the main surface 2 of the semiconductor device 1 .
  • the power supply wiring 5 and the grounding wiring 6 run over the circuit 15 .
  • the nMISFET forming region 21 , the resistance element forming region 22 , the diode element forming region 23 , the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 are arranged over the main surface of the semiconductor substrate (semiconductor wafer) 30 primarily constructed of, for example, p-type single crystal silicon.
  • the regions are electrically separated from one another by element isolating regions 31 formed over the main surface of the semiconductor substrate 30 .
  • the element isolating region 31 includes an insulating material such as silicon oxide and others (field insulating film or embedded insulating film) and may be formed by Shallow Trench Isolation (STI) method or Local Oxidation of Silicon (LOCOS) method.
  • a p-type well (p-type semiconductor region) 32 and an n-type well (n-type semiconductor region) 33 are formed on the main surface of the semiconductor substrate 30 .
  • the p-type well 32 is formed in the region two-dimensionally including the nMISFET forming region 21 , the resistance element forming region 22 and the diode element forming region 23 .
  • the n-type well 33 is formed in the region two-dimensionally including the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 .
  • a plurality of gate electrodes 34 are formed over the p-type well 32 through a gate insulation film (not shown) so as to extend in the X-direction in the nMISFET forming region 21 .
  • the n-type semiconductor regions (n-type diffused layer) 35 as a source and a drain are formed in regions on both sides of the gate electrode 34 .
  • an n-type semiconductor region 35 d functions as one of a source or a drain (drain region in this case) and an n-type semiconductor region 35 s functions as one of a source or drain (source region in this case).
  • a plurality of the gate electrodes 34 include, for instance, lower resistance polycrystalline silicon (doped polysilicon) film and are electrically connected to each other by wirings (not shown).
  • the n-channel MISFET constituting the nMISFET Qn 1 is formed by the gate electrode 34 , the gate insulation film (not shown) under the gate electrode 34 and the n-type semiconductor region 35 ( 35 d and 35 s ) as a source and a drain.
  • the pMISFET forming region 27 is almost the same in configuration as the nMISFET forming region 21 reversed in terms of conductivity type. That is to say, a plurality of gate electrodes 36 are formed over the n-type well 33 through a gate insulation film (not shown) so as to extend in the X-direction in the pMISFET forming region 27 .
  • the p-type semiconductor regions (p-type diffused layer) 37 as a source and a drain are formed in regions on both sides of the gate electrode 36 .
  • a p-type semiconductor region 37 d functions as one of a source or a drain (drain region in this case) and a p-type semiconductor region 37 s functions as one of a source or a drain (source region in this case).
  • a plurality of the gate electrodes 36 include, for instance, lower resistance polycrystalline silicon (doped polysilicon) film and are electrically connected to each other by wirings (not shown).
  • the p-channel MISFET constituting the pMISFET Qp 1 is formed by the gate electrode 36 , the gate insulation film (not shown) under the gate electrode 36 and the p-type semiconductor region 37 ( 37 d and 37 s ) as a source and a drain.
  • the element isolating region 31 On which a plurality of the resistance elements 38 (the resistance element 38 constituting the resistance element R 1 ) including, for example, polycrystalline silicon (doped polysilicon) film into which impurities are introduced are formed.
  • the resistance element forming region 26 is substantially the same in configuration as the resistance element forming region 22 . That is, all over the resistance element forming region 26 is formed the element isolating region 31 , on which a plurality of the resistance elements 39 (the resistance element 39 constituting the resistance element R 2 ) including, for example, polycrystalline silicon (doped polysilicon) film into which impurities are introduced are formed.
  • the resistance elements 38 and 39 may be formed in such a manner that a polycrystalline silicon film into which impurities are introduced is formed over the semiconductor substrate 30 and patterned by a photolithography method and a dry etching method.
  • the resistance value of the resistance elements 38 and 39 is controlled within a desired value by adjusting the concentration of impurities introduced into the polycrystalline silicon film constituting the resistance elements 38 and 39 , the dimensions of the polycrystalline silicon film constituting the resistance elements 38 and 39 and distance between the contacts (plugs PG) connected to the resistance elements 38 and 39 .
  • the n-type semiconductor region (n-type diffused layer) 41 and the p-type semiconductor region (p-type diffused layer) 42 are two-dimensionally formed adjacently to each other on the p-type well 32 .
  • the n-type semiconductor region 41 and the p-type semiconductor region 42 extending in the X-direction are alternately arranged in the Y-direction.
  • the diode element (the diode element constituting the diode element D 1 ) is formed by a PN junction between the n-type semiconductor region 41 and the p-type semiconductor region 42 .
  • the p-type semiconductor region 42 maybe constructed of a part of the p-type well 32 .
  • the diode element forming region 25 is almost the same in configuration as the diode element forming region 23 reversed in terms of conductivity type. That is, in the diode element forming region 25 , the p-type semiconductor region (p-type diffused layer) 43 and the n-type semiconductor region (n-type diffused layer) 44 are two-dimensionally formed adjacently to each other on the n-type well 33 .
  • the diode element (the diode element constituting the diode element D 2 ) is formed by a PN junction between the p-type semiconductor region 43 and the n-type semiconductor region 44 .
  • the p-type semiconductor region 43 and the n-type semiconductor region 44 extending in the X-direction are alternately arranged in the Y-direction.
  • the n-type semiconductor region 44 may be constructed of a part of the p-type well 33 .
  • p-type semiconductor regions (p-type diffused layer) 46 as a guard ring are formed around the nMISFET forming region 21 and the diode element forming region 23 .
  • n-type semiconductor regions (n-type diffused layer) 47 as a guard ring are formed around the diode element forming region 25 and the pMISFET forming region 27 .
  • the p-type semiconductor region 46 may be constructed of a part of the p-type well 32 .
  • the n-type semiconductor region 47 may be constructed of a part of the n-type well 33 .
  • FIGS. 6 and 8 show cross sections (in the X-direction) passing through the n-type semiconductor region 35 d (drain region) in the nMISFET forming region 21 , the resistance element 38 in the resistance element forming region 22 , the n-type semiconductor region 41 in the diode element forming region 23 , the p-type semiconductor region 43 in the diode element forming region 25 , the resistance element 39 in the resistance element forming region 26 and the p-type semiconductor region 37 d (drain region) in the pMISFET forming region 27 .
  • FIGS. 6 and 8 show cross sections (in the X-direction) passing through the n-type semiconductor region 35 d (drain region) in the nMISFET forming region 21 , the resistance element 38 in the resistance element forming region 22 , the n-type semiconductor region 41 in the diode element forming region 23 , the p-type semiconductor region 43 in the diode element forming region 25 , the resistance element 39 in the resistance
  • FIG. 7 and 9 show cross sections (in the X-direction) passing through the n-type semiconductor region 35 s (source region) in the nMISFET forming region 21 , the region where the resistance element 38 is not formed in the resistance element forming region 22 , the p-type semiconductor region 42 in the diode element forming region 23 , the n-type semiconductor region 44 in the diode element forming region 25 , the region where the resistance element 39 is not formed in the resistance element forming region 26 and the p-type semiconductor region 37 s (source region) in the pMISFET forming region 27 .
  • a plurality of interlayer insulating films and of wiring layers are formed over the semiconductor substrate 30 .
  • the semiconductor device 1 has a multilayer wiring structure over the semiconductor substrate 30 .
  • the cross sections shown in FIGS. 6 to 9 integrally illustrate a plurality of interlayer insulating films and the uppermost layer of a protective film (surface protective film and insulating film) as an insulating film 50 to make them easily viewable.
  • a first, second, third, fourth, fifth, sixth and seventh layer wirings M 1 , M 2 , M 3 , M 4 , M 5 , M 6 and M 7 are formed in this order from the bottom.
  • the first layer wiring M 1 is formed of, for example, a patterned tungsten film and the like.
  • the second, third, fourth, fifth, sixth and seventh layer wirings M 2 , M 3 , M 4 , M 5 , M 6 and M 7 are formed of an embedded copper wiring formed by a damascene method (single or dual damascene method).
  • the wirings M 2 to M 7 may be formed of aluminum made of aluminum alloy film on which the wirings M 2 to M 7 are patterned.
  • Interlayer insulating films including silicon oxide film or low dielectric-constant insulating film (so-called low-k film) are formed between the semiconductor substrate 30 and the first layer wiring M 1 and among the wirings M 1 to M 7 .
  • the wirings M 1 to M 7 are electrically connected to one another through conductive plugs PG formed in the interlayer insulating films according to need. If the wirings M 2 to M 7 are formed by the dual damascene method, the plugs PG are integrally formed with the wirings M 2 to M 7 .
  • the first layer wiring M 1 is electrically connected to elements (semiconductor elements or passive elements) formed on the main surface of the semiconductor substrate 30 through conductive plugs PG formed in the interlayer insulating films according to need.
  • the conductive layer (conductive film, metallic layer) 51 for the bonding pad 4 is formed over the seventh layer wiring M 7 as the uppermost metallic layer (wiring layer, an eighth layer wiring).
  • the conductive layer 51 forms the bonding pad 4 .
  • the conductive layer 51 is formed of, for instance, patterned aluminum alloy film (metallic layer).
  • An interlayer insulating film (not shown) is formed between the conductive layer 51 and the seventh layer wiring.
  • On the conductive layer 51 a protective film (the insulating film 50 ) made of an insulating material is formed to be the uppermost layer film (surface film) of the semiconductor device 1 .
  • the bonding pad 4 is formed of a part of the conductive layer 51 exposed from the opening 52 formed on the protective film. For this reason, the bonding pad 4 is integrally formed with the conductive layer 51 , and a part of the conductive layer 51 is the bonding pad 4 . In other words, the bonding pad 4 is formed by a part of the conductive layer 51 .
  • the grounding wiring 7 and the power supply wiring 8 are formed by the fourth, fifth, sixth, and seventh layer wirings M 4 , M 5 , M 6 , and M 7 and the plugs PG connecting between the wirings M 4 , M 5 , M 6 , and M 7 .
  • the grounding wiring 7 and the power supply wiring 8 extend along the periphery (four sides) of the semiconductor device 1 , i.e., along the Y-direction.
  • the damascene method is a technique in which a conductive film is formed on an interlayer insulating film to be embedded in a wiring opening formed in the interlayer insulating film and the conductive film outside the wiring opening is removed by a CMP method or the like to be embedded in the wiring opening to form an embedded wiring.
  • An excessively wide wiring opening can cause dishing at the time of CMP.
  • the wiring on the same layer among the wirings forming the grounding wiring 7 is divided into plural wirings and synthesized to constitute the grounding wiring 7 .
  • the wiring on the same layer among the wirings forming the grounding wiring 8 is divided into plural wirings and synthesized to constitute the grounding wiring 8 .
  • the grounding wiring 7 and the power supply wiring 8 are illustrated as an integrated pattern to make them easily viewable. If the grounding wiring 7 and the power supply wiring 8 are formed of aluminum wirings without the use of the damascene method, the wiring on the same layer among the wirings forming the grounding wiring 7 may be integrally formed, and similarly, the wiring on the same layer among the wirings forming the grounding wiring 8 may be integrally formed.
  • the grounding wiring 7 and the power supply wiring 8 extend to pass through over the region for forming the input/output circuit 11 in the Y-direction.
  • the grounding wiring 7 and the power supply wiring 8 extend in the Y-direction along the periphery of the semiconductor device 1 to pass through over the nMISFET forming region 21 , the resistance element forming region 22 , the diode element forming region 23 , the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 constituting the input/output circuit 11 .
  • both the grounding wiring 7 and the power supply wiring 8 extend along the main surface 2 of the semiconductor device 1 , and the power supply wiring 8 is arranged outside (on the side of the periphery of the main surface 2 of the semiconductor device 1 ) the grounding wiring 7 .
  • the grounding wiring 7 passes through over the nMISFET forming region 21 , the resistance element forming region 22 and the diode element forming region 23
  • the power supply wiring 8 passes through over the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 .
  • the grounding wiring 7 may be interchanged in position with the power supply wiring 8 (i.e., the power supply wiring 8 is inside and the grounding wiring 7 is outside), in that case, it is more preferable that the nMISFET forming region 21 , the resistance element forming region 22 , the diode element forming region 23 , the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 are arranged in the opposite order.
  • the bonding pad 4 and the conductive layer 51 used for forming the bonding pad 4 are positioned over the grounding wiring 7 and the power supply wiring 8 .
  • the conductive layer 51 may be regarded as a conductive layer positioned over the grounding wiring 7 and the power supply wiring 8 and electrically connected to the bonding pad 4 .
  • the bonding pad 4 , the grounding wiring 7 , the power supply wiring 8 , the MISFET in the nMISFET forming region 21 , the resistance elements 38 (R 1 ) and 39 (R 2 ) in the resistance element forming regions 22 and 26 , the diode elements (D 1 and D 2 ) in the diode element forming regions 23 and 25 and the MISFET in the pMISFET forming region 27 are electrically connected to each other through the plugs PG, the wirings M 1 to M 7 and the conductive layer 51 according to need as shown in FIGS. 2 to 9 , forming the input/output circuit 11 with a circuit configuration shown in FIG. 10 .
  • the grounding wiring 7 and the power supply wiring 8 extend in the Y-direction along the periphery of the semiconductor device 1 .
  • the pulling-out region (wiring pulling-out region, wiring drawing up region, wiring taking-out region and pad taking-out section) 24 for the wiring 53 is provided between the grounding wiring 7 and the power supply wiring 8 .
  • the pulling-out region 24 is a region (part) where the wiring 53 (the first wiring) electrically connected to elements (where, the resistance elements R 1 and R 2 and the diode elements D 1 and.
  • the wiring 53 is electrically connected to the protective elements (the resistance elements 38 (R 1 ) and 39 (R 2 ) in the resistance element forming regions 22 and 26 and the diode elements D 1 and D 2 in the diode element forming regions 23 and 25 ) constituting the input/output circuit 11 formed on the semiconductor substrate 30 through the plugs PG.
  • the wiring 53 lies under the bonding pad 4 , the conductive layer 51 , the grounding wiring 7 and the power supply wiring 8 and is formed of, for example, the first, second and third layer wirings M 1 , M 2 and M 3 and the plugs PG connecting the wirings M 1 , M 2 and M 3 .
  • the wiring 53 is positioned under the grounding wiring 7 and the power supply wiring 8 , however, the protective elements (the resistance elements R 1 and R 2 and the diode elements D 1 and D 2 ) over the semiconductor substrate 30 connected to the wiring 53 via the plugs PG need electrically connecting to the bonding pad 4 , so that the wiring 53 requires to be pulled out (drawing up and taking out) over the grounding wiring 7 and the power supply wiring 8 to be electrically connected to the conductive layer 51 for the bonding pad 4 .
  • the wiring 53 is pulled out over the grounding wiring 7 and the power supply wiring 8 in the pulling-out region 24 between the grounding wiring 7 and the power supply wiring 8 to be electrically connected to the conductive layer 51 .
  • the pulling-out region 24 is a part (conductive portion) that electrically connects between the conductive layer 51 and the wiring 53 and includes, for example, the second, third, fourth, fifth, sixth and seventh layer wirings M 2 , M 3 , M 4 , M 5 , M 6 and M 7 , the conductive layer 51 and the plugs PG electrically connecting therebeween.
  • the pulling-out region 24 is arranged between a group including the nMISFET forming region 21 , the resistance element forming region 22 and the diode element forming region 23 and a group including the pMISFET forming region 27 , the resistance element forming region 26 and the diode element forming region 25 and the wiring 53 is pulled out over the grounding wiring 7 and the power supply wiring 8 to be electrically connected to the conductive layer 51 .
  • the pulling-out region 24 is arranged between the nMISFET forming region 21 and the pMISFET forming region 27 of the input/output circuit 11 .
  • the wiring 53 electrically connected to the conductive layer 51 for the bonding pad 4 through the pulling-out region 24 is electrically connected to one end of the resistance element 38 in the resistance element forming region 22 , the n-type semiconductor region 41 in the diode element forming region 23 , the p-type semiconductor region 43 in the diode element forming region 25 and one end of the resistance element 39 in the resistance element forming region 26 through the plugs PG and others.
  • the other end of the resistance element 38 in the resistance element forming region 22 is electrically connected to the n-type semiconductor region 35 d (drain region) in the nMISFET forming region 21 through the first, second and third layer wirings M 1 , M 2 and M 3 and the plugs PG.
  • the other end of the resistance element 39 in the resistance element forming region 26 is electrically connected to the p-type semiconductor region 37 d (drain region) in the pMISFET forming region 27 through the first, second and third layer wirings M 1 , M 2 and M 3 and the plugs PG. As shown in FIGS.
  • the n-type semiconductor region 35 s (source region) in the nMISFET forming region 21 is electrically connected to the grounding wiring 7 through the wiring 55 .
  • the p-type semiconductor region 37 s (source region) in the pMISFET forming region 27 is electrically connected to the power supply wiring 8 through the wiring 56 .
  • the wirings 55 and 56 are wirings positioned under the grounding wiring 7 and the power supply wiring 8 and include the first, second and third layer wirings M 1 , M 2 and M 3 and the plugs PG.
  • the wirings 53 , 55 and 56 are positioned on the same layer, however, they are different from each other. The circuit configuration shown in FIG. 10 is thus realized.
  • a plurality of the bonding pads 4 are staggered. That is, a plurality of the bonding pads 4 are arranged in two rows along each side of the semiconductor device 1 . The position of the bonding pads 4 is displaced by half pitch between the rows. The first bonding pad 4 a near the end of the semiconductor device 1 and the second bonding pad 4 b positioned further inside than the first bonding pad 4 a in the semiconductor device 1 are alternately arranged. For this reason, as shown in FIGS.
  • the wiring 53 is pulled out in the pulling-out region 24 to be connected to the conductive layer 51 and caused to extend along the X-direction toward the end 2 a of the semiconductor device 1 and to be exposed from the opening 52 of the protective film, thereby forming the first bonding pad 4 a near the end of the semiconductor device 1 .
  • the wiring 53 is pulled out in the pulling-out region 24 to be connected to the conductive layer 51 and caused to extend along the X-direction toward the end 2 a of the semiconductor device 1 and to be exposed from the opening 52 of the protective film, thereby forming the first bonding pad 4 a near the end of the semiconductor device 1 .
  • the wiring 53 is pulled out in the pulling-out region 24 to be connected to the conductive layer 51 and caused to extend along the X-direction opposite to the direction toward the end 2 a of the semiconductor device 1 (i.e., in the direction toward the inner side of the main surface 2 of the semiconductor device 1 ) and to be exposed from the opening 52 of the protective film, thereby forming the second bonding pad 4 b positioned further inside than the first bonding pad 4 a in the semiconductor device 1 .
  • the grounding wiring 8 is arranged under the first bonding pad 4 a.
  • the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 are arranged under the power supply wiring 8 .
  • the grounding wiring 7 is arranged under the second bonding pad 4 b.
  • the nMISFET forming region 21 , the resistance element forming region 22 and the diode element forming region 23 are arranged under the grounding wiring 7 .
  • the grounding wiring 7 and the power supply wiring 8 pass through over the protective elements (the resistance elements 38 (R 1 ) and 39 (R 2 ) in the resistance element forming regions 22 and 26 and the diode elements D 1 and D 2 in the diode element forming regions 23 and 25 ) constituting the input/output circuit 11 .
  • the bonding pad 4 is arranged (exists) over the protective elements (the resistance elements 38 (R 1 ) and 39 (R 2 ) in the resistance element forming regions 22 and 26 and the diode elements D 1 and D 2 in the diode element forming regions 23 and 25 ) constituting the input/output circuit 11 .
  • the bonding pad is provided further outside than the pulling-out region 24 , so that a semiconductor device requires to be increased in planar dimension by the bonding pad.
  • the bonding pads on the inner peripheral side can be arranged further inside than the pulling-out region 24 , however, the bonding pads on the outer peripheral side needs to be arranged outside the pulling-out region 24 , so that a semiconductor device requires to be increased in planar dimension by the bonding pad in the first comparison example. This causes a disadvantage in downsizing a semiconductor device.
  • the pulling-out region 24 is provided between the grounding wiring 7 and the power supply wiring 8 , and the wiring 53 is pulled out over the grounding wiring 7 and the power supply wiring 8 to be (electrically) connected to the conductive layer 51 .
  • the bonding pad 4 can be arranged further inside by the position where the pulling-out region 24 is positioned further inside than the power supply wiring 8 .
  • the bonding pad 4 can be arranged over the input/output circuit 11 (I/O cell) including the nMISFET forming region 21 , the resistance element forming region 22 , the diode element forming region 23 , the diode element forming region 25 , the resistance element forming region 26 and the pMISFET forming region 27 .
  • the bonding pad 4 can be arranged over the protective elements (the resistance elements 38 (R 1 ) and 39 (R 2 ) in the resistance element forming regions 22 and 26 and the diode elements D 1 and D 2 in the diode element forming regions 23 and 25 ). This allows the semiconductor device 1 to be reduced in planar dimension, enabling downsizing the semiconductor device 1 .
  • the second bonding pad 4 b on the inner peripheral side is arranged further inside than the pulling-out region 24 (on the inner side of the main surface 2 of the semiconductor device 1 ) and the first bonding pad 4 a on the outer peripheral side is arranged further outside than the pulling-out region 24 (on the side of end 2 a of the main surface 2 of the semiconductor device 1 ).
  • the pulling-out region 24 is provided between the grounding wiring 7 and the power supply wiring 8 , not only the second bonding pad 4 b on the inner peripheral side but the first bonding pad 4 a on the outer peripheral side can be arranged over the input/output circuit 11 (I/O cell).
  • the distance from the pulling-out region 24 (length along which the conductive layer 51 extends, i.e., wiring length) to both the first bonding pad 4 a on the outer peripheral side and the second bonding pad 4 b on the inner peripheral side can be equalized to each other, so that the characteristics of the first and second bonding pads 4 a and 4 b can be unified, which allows further improving the characteristics of the semiconductor device having the staggered bonding pads 4 .
  • the power supply wiring 5 and the grounding wiring 6 do not impair the performance of the core region 3 by leaving the circular wiring on the uppermost layer.
  • Two MISFET elements i.e., the nMISFET Qn 1 and the pMISFET Qp 1 ) used in the input/output circuit 11 are formed in two different regions (the nMISFET forming region 21 and the pMISFET forming region 27 ) respectively and the pulling-out region 24 is provided between the nMISFET forming region 21 and the pMISFET forming region 27 .
  • the pulling-out region 24 can be arranged around the center of the input/output circuit 11 , which enables the bonding pad 4 to be arranged at a position near the center of the input/output circuit 11 .
  • the bonding pad 4 can be arranged further inside by the position where the pulling-out region 24 is positioned further inside (on the inner side of the main surface 2 of the semiconductor device 1 ) than the pMISFET forming region 27 . This allows the semiconductor device 1 to be reduced in planar dimension, enabling downsizing the semiconductor device.
  • the grounding wiring 7 and the power supply wiring 8 are arranged over the protective elements (the resistance elements 38 (R 1 ) and 39 (R 2 ) in the resistance element forming regions 22 and 26 and the diode elements D 1 and D 2 in the diode element forming regions 23 and 25 ) and the nMISFET forming region 21 and the pMISFET forming region 27 , i.e., over the input/output circuit 11 (I/O cell). Furthermore, the bonding pad 4 (the conductive layer 51 ) is arranged over the grounding wiring 7 and the power supply wiring 8 .
  • Arranging the bonding pad 4 over the protective elements (the resistance elements 38 (R 1 ) and 39 (R 2 ) in the resistance element forming regions 22 and 26 and the diode elements D 1 and D 2 in the diode element forming regions 23 and 25 ) and the nMISFET forming region 21 and the pMISFET forming region 27 , i.e., over the input/output circuit 11 (I/O cell) eliminates the need for increasing a chip dimension owing to the bonding pad 4 , which permits reducing the planar dimension of the semiconductor device 1 .
  • grounding wiring 7 and the power supply wiring 8 are formed by a metallic layer on the same layer as the bonding pad 4 , making a detour around the input/output circuit 11 and providing the grounding wiring and the power supply wiring narrow the width of wiring of a power supply wiring to decrease current density.
  • widening the width of wiring of a power supply wiring to keep current density results in increase in planar dimension of the semiconductor device.
  • the grounding wiring 7 and the power supply wiring 8 are arranged under the bonding pad 4 and over the protective elements and the nMISFET and pMISFET forming regions 21 and 27 (i.e., over the input/output circuit 11 (I/O cell), which allows widening the wiring width of the grounding wiring 7 and the power supply wiring 8 and accurately passing an EDS surge inputted into the bonding pad 4 through the grounding wiring 7 and the power supply wiring 8 . Furthermore, providing the pulling-out region 24 between the grounding wiring 7 and the power supply wiring 8 permits readily realizing the grounding wiring 7 and the power supply wiring 8 that are wide in width.
  • FIG. 11 is a top view showing the principal elements of the semiconductor device according to the present embodiment and corresponds to FIG. 4 in the first embodiment.
  • FIG. 10 shows the periphery of the semiconductor device and planar layout of the input/output circuit 11 , the circuit 15 , the power supply wiring 5 , the grounding wiring 6 and the bonding pad 4 but omits the illustration of the grounding wiring 7 and the power supply wiring 8 .
  • the bonding pads 4 are staggered. In the present embodiment, a plurality of bonding pads 4 are straight arranged in one row instead of being staggered. That is, all the bonding pads 4 configured in the same manner as the first bonding pad 4 a in the first embodiment correspond to the present embodiment. As another embodiment, all bonding pads 4 may be configured in the same manner as the second bonding pad 4 b in the first embodiment.
  • Other configurations of the semiconductor device in the present embodiment are substantially the same as the semiconductor device 1 in the first embodiment, so that duplicated description is omitted thereof.
  • the wiring 53 is pulled out over the grounding wiring 7 and the power supply wiring 8 in the pulling-out region 24 between the grounding wiring 7 and the power supply wiring 8 to be connected to the conductive layer 51 , which permits the bonding pads 4 to be arranged over the input/output circuit 11 (I/O cell), thereby allowing the semiconductor device 1 to be downsized.
  • I/O cell input/output circuit 11
  • FIGS. 12 and 13 are top views showing the principal elements of the semiconductor device according to the present embodiment and correspond to FIGS. 2 and 5 in the above first embodiment respectively.
  • FIGS. 12 and 13 show the same region.
  • FIG. 12 shows the periphery of the semiconductor device and planar layout of the input/output circuit 11 a and circuit 15 .
  • FIG. 13 shows the planar layout of the input/output circuit 11 a, the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 , the power supply wiring 8 , the conductive layer 51 and the bonding pad 4 c.
  • FIGS. 14 and 15 are cross sections showing the principal elements of the semiconductor device according to the present embodiment.
  • a cross section along line E-E in FIG. 12 substantially corresponds to FIG. 14 .
  • a cross section along line F-F in FIG. 12 substantially corresponds to FIG. 15 .
  • FIG. 16 is a circuit diagram (equivalent circuit) showing an input/output circuit 11 a.
  • the bonding pad 4 c and the input/output circuit 11 a are illustrated in FIGS. 12 to 16 .
  • the bonding pad 4 c among a plurality of the bonding pads 4 provided along the periphery of main surface the semiconductor device as shown in FIG. 1 , is used for supplying power supply voltage (power supply electric potential) to the power supply wiring 8 .
  • the input/output circuit 11 a is a circuit constituting an I/O power supply cell and the circuit configuration thereof is illustrated in FIG. 16 . As can be seen from the circuit diagram in FIG.
  • the input/output circuit 11 a has n-channel MISFETs Qn 3 and Qn 4 for protection (hereinafter referred to as “nMISFET Qn 3 ” and “nMISFET Qn 4 ”) and the diodes D 3 and D 4 for protection.
  • the bonding pad 4 c is electrically connected directly to the power supply wiring 8 and electrically connected to the grounding wiring 7 through nMISFETs Qn 3 and Qn 4 and the diodes D 3 and D 4 as protective elements.
  • the bonding pad 4 c is electrically connected to the grounding wiring 7 through the diode D 3 and electrically connected to the grounding wiring 7 through the diode D 4 . That is, the bonding pad 4 c is electrically connected to one of the anode or the cathode of the diode D 3 , and the other of the anode or the cathode of the diode D 3 is electrically connected to the grounding wiring 7 . In addition, the bonding pad 4 c is electrically connected to one of the anode or the cathode of the diode D 4 , and the other of the anode or the cathode of the diode D 4 is electrically connected to the grounding wiring 7 .
  • the bonding pad 4 c is electrically connected to one of the source or the drain of the nMISFET Qn 3 , and the other of the source or the drain of the nMISFET Qn 3 and the gate electrode thereof are electrically connected to the grounding wiring 7 .
  • the bonding pad 4 c is electrically connected to one of the source or the drain of the nMISFET Qn 4 , and the other of the source or the drain of the nMISFET Qn 4 and the gate electrode thereof are electrically connected to the grounding wiring 7 .
  • the nMISFETs Qn 3 and Qn 4 and the diodes D 3 and D 4 constituting the input/output circuit 11 a function as protective elements. For instance, when a surge (ESD surge) is inputted into the bonding pad 4 c, it can be passed to the grounding wiring 7 through the nMISFETs Qn 3 and Qn 4 and the diodes D 3 and D 4 . Thus, the input/output circuit 11 a functions as a protective circuit (for I/O power supply cell).
  • an nMISFET forming region 21 a, a diode element forming region 23 a, an pulling-out region 24 , a diode element forming region 25 a and an nMISFET forming region 27 a are arranged at the periphery of the main surface 2 of the semiconductor device 1 in this order in the direction from the inside (the inner side of the main surface 2 of the semiconductor device 1 ) to the periphery (the side of the end 2 a of main surface 2 of the semiconductor device 1 ) i.e., in the X-direction.
  • the nMISFET forming region 21 a is a region where an MISFET corresponding to the nMISFET Qn 3 is formed and the diode element forming region 23 a is a region where a diode element corresponding to the diode element D 3 is formed.
  • the diode element forming region 25 a is a region where a diode element corresponding to the diode element D 4 is formed.
  • the nMISFET forming region 27 a is a region where an MISFET corresponding to the nMISFET Qn 4 is formed.
  • the input/output circuit 11 a is formed by the nMISFET forming region 21 a (nMISFET Qn 3 ), the diode element forming region 23 a (the diode element D 3 ), the diode element forming region 25 a (the diode element D 4 ) and the nMISFET forming region 27 a (nMISFET Qn 4 ).
  • the input/output circuit 11 a is provided in the vicinity of the bonding pad 4 c.
  • a p-type well 32 and an n-type well 33 are formed on the main surface of the semiconductor substrate 30 .
  • the p-type well 32 is formed in the region two-dimensionally including the nMISFET forming regions 21 a and 27 a.
  • the n-type well 33 is formed in the region two-dimensionally including the diode element forming regions 23 a and 25 a.
  • the nMISFET forming regions 21 a and 27 a are substantially the same in configuration.
  • the nMISFET forming regions 21 a and 27 a are similar in configuration to the nMISFET forming region 21 in the first embodiment. That is, in the nMISFET forming regions 21 a and 27 a, a plurality of gate electrodes 61 are so formed as to extend in the X-direction through a gate insulating film (not shown) over the p-type well 32 , and the n-type semiconductor regions (n-type diffused layer) 62 as a source and a drain are formed in the regions on both sides of the gate electrodes 61 .
  • the n-type semiconductor region 62 a functions as one of a source or a drain and the n-type semiconductor region 62 b functions as the other of a source or a drain.
  • the gate electrodes 61 , the gate insulating film (not shown) and the n-type semiconductor region 62 ( 62 a and 62 b ) as a source and a drain under the gate electrodes 61 form the n-type MISFET constituting the nMISFETs Qn 3 and Qn 4 in the nMISFET forming regions 21 a and 27 a.
  • the diode element forming regions 23 a and 25 a are substantially the same in configuration.
  • the diode element forming regions 23 a and 25 a are similar in configuration to the diode element forming regions 23 and 25 in the first embodiment. That is, in the diode element forming regions 23 a and 25 a, the n-type semiconductor region (n-type diffused layer) 63 and the p-type semiconductor region (p-type diffused layer) 64 are two-dimensionally formed adjacently to each other on the n-type well 33 .
  • the n-type semiconductor region 63 and the p-type semiconductor region 64 extending in the X-direction are alternately arranged in the Y-direction.
  • the diode element (the diode element constituting the diode elements D 3 and D 4 ) is formed by a PN junction between the n-type semiconductor region 63 and the p-type semiconductor region 64 in the diode element forming regions 23 a and 25 a.
  • the p-type semiconductor region 64 may be constructed of a part of the n-type well 33 .
  • P-type semiconductor regions (p-type diffused layer) 65 as a guard ring are formed in the nMISFET forming regions 21 a and 27 a, and n-type semiconductor regions (n-type diffused layer) 66 as a guard ring are formed in the diode element forming regions 23 a and 25 a.
  • the p-type semiconductor regions 65 may be constructed of a part of the p-type well 32 and the n-type semiconductor regions 66 may be constructed of a part of the n-type well 33 .
  • FIG. 14 shows a cross section (in the X-direction) passing through the n-type semiconductor regions 62 a in the nMISFET forming regions 21 a and 27 a and the n-type semiconductor regions 63 in the diode element forming regions 23 a and 25 a.
  • FIG. 15 shows a cross section (in the X-direction) passing through the n-type semiconductor regions 62 b in the nMISFET forming regions 21 a and 27 a and the n-type semiconductor regions 64 in the diode element forming regions 23 a and 25 a.
  • a multilayer wiring structure formed of a plurality of interlayer insulating films (integrally illustrated as the insulating film 50 ) and of wiring layers (wirings M 1 to M 7 ) is laid over the semiconductor substrate 30 .
  • the grounding wiring 7 and the power supply wiring 8 are formed by the fourth, fifth, sixth and seventh layer wirings M 4 , M 5 , M 6 and M 7 and the plugs PG connecting between the wirings M 4 , M 5 , M 6 and M 7 .
  • the grounding wiring 7 and the power supply wiring 8 extend in the Y-direction along the periphery of the semiconductor device to pass through over the protective elements (the nMISFET forming regions 21 a and 27 a and the diode element forming regions 23 a and 25 a ) constituting the input/output circuit 11 a.
  • the grounding wiring 7 passes through over the nMISFET forming region 21 a and the diode element forming region 23 a.
  • the power supply wiring 8 passes through over the diode element forming region 25 a and the nMISFET forming region 27 a.
  • the conductive layer 51 being the uppermost metallic layer is exposed from the opening 52 of the protective film (illustrated as the insulating film 50 ) to form the bonding pad 4 c.
  • the bonding pad 4 c is integrally formed with the conductive layer 51 , and a part of the conductive layer 51 is the bonding pad 4 c.
  • the conductive layer 51 may be regarded as a conductive layer positioned over the grounding wiring 7 and the power supply wiring 8 and electrically connected to the bonding pad 4 c.
  • the bonding pad 4 c is arranged over the protective elements (the nMISFET forming regions 21 a and 27 a and the diode element forming regions 23 a and 25 a ) constituting the input/output circuit 11 a.
  • the bonding pad 4 c is arranged over the diode element forming region 25 a and the nMISFET forming region 27 a, however, as another embodiment, the bonding pad 4 c may be arranged over the nMISFET forming region 21 a and the diode element forming region 23 a by forming a pattern of the conductive layer 51 as in the case of the second bonding pad 4 b in the first embodiment.
  • the conductive layer 51 for the bonding pad 4 c is electrically connected to a wiring 53 a under the grounding wiring 7 and the power supply wiring 8 through the pulling-out region 24 .
  • the wiring 53 a is connected to the power supply wiring 8 through the plugs PG and electrically connected to the n-type semiconductor region 63 in the diode element forming regions 23 a and 25 a and the n-type semiconductor region 62 a in the nMISFET forming regions 21 a and 27 a through the plugs PG.
  • the wiring 53 a correspond to the wiring 53 in the above first embodiment. As shown in FIG.
  • the p-type semiconductor region 64 in the diode element forming regions 23 a and 25 a and the n-type semiconductor region 62 b in the nMISFET forming regions 21 a and 27 a are electrically connected to the wiring 56 a through the plugs PG.
  • the wiring 56 a is electrically connected to the grounding wiring 7 over the wiring 56 a through the plugs PG.
  • the wiring 56 a corresponds to the wirings 55 and 56 in the first embodiment.
  • Wirings 53 a and 56 a are wirings positioned under the conductive layer 51 , the grounding wiring 7 and the power supply wiring 8 , and include the first, second and third layer wirings M 1 , M 2 and M 3 and the plugs PG.
  • the wirings 53 a and 56 a are on the same layer, but different from each other. The circuit configuration shown in FIG. 16 is thus realized.
  • the wiring 53 a is electrically connected to the protective elements (MISFET Qn 3 and Qn 4 in the nMISFET forming regions 21 a and 27 a and the diode elements D 3 and D 4 in the diode element forming regions 23 a and 25 a ) formed over the semiconductor substrate 30 through the plugs PG.
  • the wiring 53 a positioned under the grounding wiring 7 and the power supply wiring 8 needs to be electrically connected to the bonding pad 4 c.
  • the pulling-out region 24 is provided between the grounding wiring 7 and the power supply wiring 8 , and the wiring 53 a is pulled out over the grounding wiring 7 and the power supply wiring 8 to be connected to the conductive layer 51 in the pulling-out region 24 .
  • the nMISFET of a protective element constituting the input/output circuit 11 a as a protective circuit is divided and formed into the nMISFET forming regions 21 a and 27 a and the diode element of a protective element constituting the input/output circuit 11 a is divided and formed into two diode element forming regions 23 a and 25 a.
  • the pulling-out region 24 is arranged between a group including the nMISFET forming region 21 a and the diode element forming region 23 a and a group including the diode element forming region 25 a and the nMISFET forming region 27 a.
  • the wiring 53 a is pulled out over the grounding wiring 7 and the power supply wiring 8 to be electrically connected to the conductive layer 51 . Furthermore, it may be regarded that the pulling-out region 24 is arranged between the nMISFET forming region 21 a and the nMISFET forming region 27 a.
  • such a configuration enables providing substantially the same effect as in the first embodiment.
  • the pulling-out region 24 is provided between the grounding wiring 7 and the power supply wiring. 8 , and the wiring 53 a is pulled out over the grounding wiring 7 and the power supply wiring 8 to be connected to the conductive layer 51 , so that the bonding pad 4 c can be arranged further inside, allowing the planar dimension of the semiconductor device (a semiconductor chip) to be reduced, which permits downsizing the semiconductor device.
  • the protective elements (nMISFET and diode element) constituting the input/output circuit 11 a are divided into two respective regions to arrange the pulling-out region 24 between the nMISFET forming regions 21 a and 27 a and between the diode element forming regions 23 a and 25 a.
  • the wiring 53 a is pulled out over the grounding wiring 7 and the power supply wiring 8 to be connected to the conductive layer 51 .
  • the nMISFET forming region occupying a larger area than the diode element forming regions 23 a and 25 a is divided into two regions (i.e., the nMISFET forming region 21 a and 27 a ) and the pulling-out region 24 is arranged between the nMISFET forming regions 21 a and 27 a.
  • This enables the pulling-out region 24 to be arranged around the center of the region for forming the input/output circuit 11 a, which permits the bonding pad 4 c to be arranged at a position near the center of the input/output circuit 11 a.
  • the bonding pad 4 can be arranged further inside by the position where the pulling-out region 24 is positioned further inside than the nMISFET forming region 27 a. This allows the semiconductor device to be reduced in planar dimension to downsize the semiconductor device.
  • FIGS. 17 to 20 are top views showing the principal elements of the semiconductor device according to the present embodiment.
  • FIGS. 17 to 20 correspond to FIGS. 2 to 4 in the first embodiment respectively.
  • FIGS. 17 and 20 show the same region.
  • FIG. 17 shows the periphery of the semiconductor device and planar layout of the input/output circuits 11 b and 11 c and circuit 15 .
  • FIG. 18 corresponds to a figure in which the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 and the power supply wiring 8 are added to FIG. 17 .
  • FIG. 19 corresponds to a figure in which the power supply wiring 5 , the grounding wiring 6 , the conductive layer 51 and the bonding pad 4 are added to FIG. 17 .
  • FIGS. 21 and 22 are cross sections showing the principal elements of the semiconductor device according to the present embodiment.
  • a cross section along line G-G in FIG. 17 substantially corresponds to FIG. 17 .
  • a cross section along line H-H in FIG. 17 substantially corresponds to FIG. 22 .
  • FIG. 23 is a circuit diagram (equivalent circuit) showing an input/output circuit 11 b.
  • FIG. 24 is a circuit diagram (equivalent circuit) showing an input/output circuit 11 c.
  • Bonding pads 4 d and 4 e and the input/output circuits 11 b and 11 c are shown in FIGS. 17 to 24 .
  • the bonding pad 4 d among a plurality of the bonding pads 4 provided along the periphery of main surface of the semiconductor device shown in FIG. 1 , is for supplying power supply voltage (power supply electric potential) to the power supply wiring 5 .
  • the bonding pad 4 e among a plurality of the bonding pads 4 provided along the periphery of main surface of the semiconductor device shown in FIG. 1 , is for supplying grounding voltage (grounding electric potential) to the grounding wiring 6 .
  • the input/output circuit 11 b is for constituting a core power-supplying cell and is configured as shown in FIG. 23 .
  • the input/output circuit 11 c is for constituting a core GND-supplying cell and is configured as shown in FIG. 24 .
  • the input/output circuit 11 b has protective n-channel MISFETs Qn 5 and Qn 6 (hereinafter referred to as “nMISFET Qn 5 ” and “nMISFET Qn 6 ”) and protective diodes D 5 and D 6 .
  • the bonding pad 4 d is electrically and directly connected to the power supply wiring 5 and electrically connected to the grounding wiring 6 through nMISFETs Qn 5 and Qn 6 and the diodes D 5 and D 6 acting as protective elements.
  • the bonding pad 4 d is electrically connected to the grounding wiring 6 through the diode element D 5 and to the grounding wiring 6 through the diode element D 6 .
  • the bonding pad 4 d is electrically connected to one of the anode or the cathode of the diode D 5 and the other of the anode or the cathode of the diode D 5 is electrically connected to the grounding wiring 6 .
  • the bonding pad 4 d is electrically connected to one of the anode or the cathode of the diode D 6 and the other of the anode or the cathode of the diode D 6 is electrically connected to the grounding wiring 6 .
  • the bonding pad 4 d is electrically connected to one of the source or the drain of the nMISFET Qn 5 and the other of the source or the drain of the nMISFET Qn 5 is electrically connected to the grounding wiring 6 .
  • the bonding pad 4 d is electrically connected to one of the source or the drain of the nMISFET Qn 6 and the other of the source or the drain of the nMISFET Qn 6 is electrically connected to the grounding wiring 6 .
  • the input/output circuit 11 c has protective n-channel MISFETs Qn 7 and Qn 8 (hereinafter referred to as “nMISFET Qn 7 ” and “nMISFET Qn 8 ”) and protective diodes D 7 and D 8 .
  • the bonding pad 4 e is electrically and directly connected to the grounding wiring 6 and electrically connected to the power supply wiring 5 through nMISFETs Qn 7 and Qn 8 and the diodes D 7 and D 8 acting as protective elements.
  • the bonding pad 4 e is electrically connected to the power supply wiring 5 through the diode element D 7 and to the power supply wiring 5 through the diode element D 8 .
  • the bonding pad 4 e is electrically connected to one of the anode or the cathode of the diode D 7 and the other of the anode or the cathode of the diode D 7 is electrically connected to the power supply wiring 5 .
  • the bonding pad 4 e is electrically connected to one of the anode or the cathode of the diode D 8 and the other of the anode or the cathode of the diode D 8 is electrically connected to the power supply wiring 5 .
  • the bonding pad 4 e is electrically connected to one of the source or the drain of the nMISFET Qn 7 and the other of the source or the drain of the nMISFET Qn 7 is electrically connected to the power supply wiring 5 .
  • the bonding pad 4 e is electrically connected to one of the source or the drain of the nMISFET Qn 8 and the other of the source or the drain of the nMISFET Qn 8 is electrically connected to the power supply wiring 5 .
  • the nMISFETs Qn 5 , Qn 6 , Qn 7 and Qn 8 and the diodes D 5 , D 6 , D 7 and D 8 constituting the input/output circuits 11 b and 11 c are capable of functioning as elements for protection (protective element).
  • a surge ESD surge
  • the like for example, is inputted into the bonding pads 4 d, it can be passed to the grounding wiring 6 through the nMISFETs Qn 5 and Qp 6 and the diodes D 5 and D 6 .
  • the input/output circuits 11 b and 11 c are capable of functioning as protective circuits for the core power-supplying cell and the core CND-supplying cell.
  • an nMISFET forming region 21 b, a diode element forming region 23 b, a pulling-out region 24 , a diode element forming region 25 b and an nMISFET forming region 27 b are arranged at the periphery of the main surface 2 of the semiconductor device 1 in this order in the direction from the inside (the inner side of the main surface 2 of the semiconductor device 1 ) to the periphery (the side of the end 2 a of main surface 2 of the semiconductor device 1 ), i.e., in the X-direction.
  • the region for forming the input/output circuit 11 c is also the same in configuration as that for forming the input/output circuit 11 b. That is to say, in the input/output circuit 11 c, an nMISFET forming region 21 c, a diode element forming region 23 c, a pulling-out region 24 , a diode element forming region 25 c and an nMISFET forming region 27 c are arranged at the periphery of the main surface 2 of the semiconductor device 1 in this order in the direction from the inside (the inner side of the main surface 2 of the semiconductor device 1 ) to the periphery (the side of the end 2 a of main surface 2 of the semiconductor device 1 ), i.e., in the X-direction.
  • the nMISFET forming region 21 b is a region where an MISFET corresponding to the nMISFET Qn 5 is formed and the diode element forming region 23 b is a region where a diode element corresponding to the diode element D 5 is formed.
  • the diode element forming region 25 b is a region where a diode element corresponding to the diode element D 6 is formed.
  • the nMISFET forming region 27 b is a region where a MISFET corresponding to the nMISFET Qn 6 is formed.
  • the input/output circuit lib is formed by the nMISFET forming region 21 b (nMISFET Qn 5 ), the diode element forming region 23 b (the diode element D 5 ), the diode element forming region 25 b (the diode element D 6 ) and the nMISFET forming region 27 b (nMISFET Qn 6 ).
  • the input/output circuit lib is provided in the vicinity of the bonding pad 4 d.
  • the nMISFET forming region 21 c is a region where an MISFET corresponding to the nMISFET Qn 7 is formed and the diode element forming region 23 c is a region where a diode element corresponding to the diode element D 7 is formed.
  • the diode element forming region 25 c is a region where a diode element corresponding to the diode element D 8 is formed.
  • the nMISFET forming region 27 c is a region where a MISFET corresponding to the nMISFET Qn 8 is formed.
  • the input/output circuit 11 c is formed by the nMISFET forming region 21 c (nMISFET Qn 7 ), the diode element forming region 23 c (the diode element D 7 ), the diode element forming region 25 c (the diode element D 8 ) and the nMISFET forming region 27 c (nMISFET Qn 8 ).
  • the input/output circuit 11 c is provided in the vicinity of the bonding pad 4 e.
  • the regions for forming the input/output circuits 27 b and 27 c are adjacently arranged to each other in the Y-direction.
  • the bonding pads 4 d and 4 e are also adjacently arranged to each other.
  • Each of the regions for forming the input/output circuits 27 b and 27 c is substantially the same in configuration as that for forming the input/output circuit 11 a in the third embodiment except for wirings. That is to say, each of the nMISFET forming regions 21 b and 21 c is substantially the same in configuration as the above nMISFET forming region 2 la except for wirings. Each of the diode element forming regions 23 b and 23 c is substantially the same in configuration as the above diode element forming region 23 a except for wirings. Each of the diode element forming regions 25 b and 25 c is substantially the same in configuration as the above diode element forming region 25 a except for wirings.
  • Each of the pMISFET forming regions 27 b and 27 c is substantially the same in configuration as the above nMISFET forming region 27 a except for wirings. For these reasons, description is omitted herein on the configuration of the nMISFET forming regions 21 b, 21 c, 27 b and 27 c and the diode element forming regions 23 b, 23 c, 25 b and 25 c.
  • FIG. 21 shows a cross section (in the X-direction) passing through the n-type semiconductor regions 62 a in the nMISFET forming regions 21 b and 27 b and the n-type semiconductor regions 63 in the diode element forming regions 23 b and 25 b.
  • FIG. 22 shows a cross section (in the X-direction) passing through the n-type semiconductor regions 62 a in the nMISFET forming regions 21 c and 27 c and the p-type semiconductor region 64 in the diode element forming regions 23 c and 25 c.
  • a multilayer wiring structure formed of a plurality of interlayer insulating films (integrally illustrated as the insulating film 50 ) and of wiring layers (wirings M 1 to M 7 ) is laid over the semiconductor substrate 30 .
  • the grounding wiring 7 and the power supply wiring 8 are formed by the sixth and seventh layer wirings M 6 and M 7 and the plugs PG connecting between the wirings M 6 and M 7 . Furthermore, the grounding wiring 7 and the power supply wiring 8 extend in the Y-direction along the periphery of the semiconductor device to pass through over the protective elements (the nMISFET forming regions 21 b, 21 c, 27 b and 27 c and the diode element forming regions 23 b, 23 c, 25 b and 25 c ) constituting the input/output circuits 11 b and 11 c.
  • the protective elements the nMISFET forming regions 21 b, 21 c, 27 b and 27 c and the diode element forming regions 23 b, 23 c, 25 b and 25 c
  • the grounding wiring 7 passes through over the nMISFET forming regions 21 a and 21 c and the diode element forming regions 23 b and 23 c.
  • the power supply wiring 8 passes through over the diode element forming regions 25 b and 25 c and the nMISFET forming regions 27 b and 27 c.
  • a wiring 71 including the fourth and fifth layer wirings M 4 and MS is provided under the grounding wiring 7 .
  • a wiring 72 including the fourth and fifth layer wirings M 4 and M 5 is provided under the power supply wiring 8 .
  • the wiring 71 extends over from the nMISFET forming region 21 b and the diode element forming region 23 b in the input/output circuit 11 b to the nMISFET forming region 21 c and the diode element forming region 23 c in the input/output circuit 11 c in the Y-direction.
  • the wiring 72 extends over from the diode element forming region 25 b and the nMISFET forming region 27 b in the input/output circuit 11 b to the diode element forming region 25 c and the nMISFET forming region 27 c in the input/output circuit 11 c in the Y-direction.
  • the power supply wiring 5 and the grounding wiring 6 are formed by the fourth, fifth, sixth and seventh layer wirings M 4 , M 5 , M 6 and M 7 and the plugs PG connecting between the wirings M 4 , M 5 , M 6 and M 7 .
  • the power supply wiring 5 and the grounding wiring 6 extend in the Y-direction further inside than the grounding wiring 7 and the power supply wiring 8 , i.e., further inside than the input/output circuits 11 b and 11 c.
  • the conductive layer 51 that is the uppermost metallic layer is exposed from the opening 52 of the protective film (illustrated as the insulating film 50 ) to form the bonding pads 4 c and 4 e, as is the case with the bonding pad 4 in the first embodiment.
  • the bonding pad 4 d is integrally formed with the conductive layer 51 , and a part of the conductive layer 51 is the bonding pad 4 d.
  • the bonding pad 4 e is integrally formed with the conductive layer 51 , and a part of the conductive layer 51 is the bonding pad 4 e.
  • the conductive layer 51 for the bonding pad 4 d and the conductive layer 51 for the bonding pad 4 e are on the same layer, however, are differently patterned conductive layers separated from each other.
  • the power supply wiring 51 may be regarded as a conductive layer positioned over the grounding wiring 7 and the power supply wiring 8 and electrically connected to the bonding pads 4 d and 4 e.
  • the pattern of the conductive layer 51 may be used also for the eight layer wiring (uppermost layer wiring) to form the power supply wiring 5 and the grounding wiring 6 by the wirings M 4 ,M 5 , M 6 and M 7 and the conductive layer 51 .
  • the bonding pad 4 d is arranged over the protective element (the nMISFET forming regions 21 b and 27 b and the diode element forming regions 23 b and 25 b ) constituting the input/output circuit 11 b.
  • the bonding pad 4 e is arranged over the protective element (the nMISFET forming regions 21 c and 27 c and the diode element forming regions 23 c and 25 c ) constituting the input/output circuit 11 c.
  • a plurality of the bonding pads 4 including the bonding pads 4 d and 4 e may be staggered. At this point, the bonding pads 4 d and 4 e are shifted in position in the Y-direction.
  • One of the bonding pads 4 d and 4 e (where, the bonding pad 4 e ) is arranged on the side near the end of the semiconductor device as in the case of the first bonding pad 4 a, and the other of the bonding pads 4 d and 4 e (where, the bonding pad 4 d ) is arranged further inside than the bonding pad 4 e as in the case of the first bonding pad 4 b.
  • the bonding pad 4 d is arranged over the nMISFET forming region 21 b and the diode element forming region 23 b and the bonding pad 4 e is arranged over the diode element forming region 25 c and the nMISFET forming region 27 c.
  • the bonding pad 4 d may be arranged over the diode element forming region 25 b and the nMISFET forming region 27 b and the bonding pad 4 e may be arranged over the nMISFET forming region 21 c and the diode element forming region 23 c.
  • the conductive layer 51 for the bonding pad 4 d extends from over the pulling-out region 24 to over the power supply wiring 5 while passing through over the diode element forming region 23 b and the nMISFET forming region 21 b and is electrically connected to the power supply wiring 5 under the conductive layer 51 through the plugs PG.
  • the conductive layer 51 for the bonding pad 4 d is electrically connected to the wiring 53 b positioned under the conductive layer 51 through the pulling-out region 24 .
  • the wiring 53 b is a wiring positioned under the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 , the power supply wiring 8 , the conductive layer 51 and the wirings 71 and 72 , and includes, for example, the first, second and third layer wirings M 1 , M 2 and M 3 and the plugs PG. As shown in FIG. 21 , the wiring 53 b extends from the region for forming the input/output circuit 11 b to under the power supply wiring 5 and is electrically connected to the power supply wiring 5 positioned over the wiring 53 b through the plugs PG and to the wiring 72 positioned over the wiring 53 b through the plugs PG.
  • the wiring 53 b is further electrically connected to the n-type semiconductor regions 63 in the diode element forming regions 23 b and 25 b and the n-type semiconductor regions 62 a in the nMISFET forming regions 21 b and 27 b under the wiring 53 b through the plugs PG.
  • the conductive layer 51 for the bonding pad 4 e extends from over the nMISFET forming region 27 c to over the grounding wiring 6 while passing the diode element forming region 25 c, the pulling-out region 24 , the diode element forming region 23 c and the nMISFET forming region 21 c and is electrically connected to the power supply wiring 6 under the conductive layer 51 through the plugs PG.
  • the conductive layer 51 for the bonding pad 4 e is electrically connected to the wiring 53 c positioned under the conductive layer 51 through the pulling-out region 24 .
  • the wiring 53 c is a wiring positioned under the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 , the power supply wiring 8 , the conductive layer 51 and the wirings 71 and 72 , and includes, for example, the first, second and third layer wirings M 1 , M 2 and M 3 and the plugs PG. As shown in FIG. 22 , the wiring 53 c extends from the region for forming the input/output circuit 11 c to under the grounding wiring 6 and is electrically connected to the power supply wiring 6 positioned over the wiring 53 c through the plugs PG and to the wiring 71 positioned over the wiring 53 c through the plugs PG.
  • the wiring 53 c is further electrically connected to the p-type semiconductor regions 64 in the diode element forming regions 23 c and 25 c and the n-type semiconductor regions 62 a in the nMISFET forming regions 21 c and 27 c under the wiring 53 c through the plugs PG.
  • the wirings 53 b and 53 c correspond to the wirings 53 and 53 a in the first to third embodiments.
  • the p-type semiconductor regions 64 in the diode element forming regions 23 b and 25 b and the n-type semiconductor regions 62 b in the nMISFET forming regions 21 b and 27 b are electrically connected to a wiring through the plugs PG or the like, and the wiring is further electrically connected to the wiring 71 positioned further over the wiring through the plugs PG.
  • the n-type semiconductor regions 63 in the diode element forming regions 23 c and 25 c and the n-type semiconductor regions 62 b in the nMISFET forming regions 21 c and 27 c are electrically connected to a wiring through the plugs PG, and the wiring is further electrically connected to the wiring 72 positioned further over the wiring through the plugs PG.
  • the circuit configurations shown in FIGS. 23 and 24 are thus realized.
  • the wiring 53 b is electrically connected to the protective elements (MISFET Qn 5 and Qn 6 in the nMISFET forming regions 21 b and 27 b and the diode elements D 5 and D 6 in the diode element forming regions 23 b and 25 b ) formed on the semiconductor substrate 30 through the plugs PG.
  • the wiring 53 c is electrically connected to the protective elements (MISFETs Qn 7 and Qn 8 in the nMISFET forming regions 21 c and 27 c and the diode elements D 7 and D 8 in the diode element forming regions 23 c and 25 c ) formed on the semiconductor substrate 30 through the plugs PG.
  • the wirings 53 b and 53 c are positioned under the grounding wiring 7 , the power supply wiring 8 and the wirings 71 and 72 , and need to be electrically connected to the bonding pads 4 d and 4 e respectively.
  • the pulling-out region 24 is provided between the grounding wiring 7 and the power supply wiring 8 , and the wirings 53 b and 53 c are pulled out over the grounding wiring 7 and the power supply wiring 8 to be connected to the conductive layer 51 in the pulling-out region 24 .
  • the nMISFET that is a protective element constituting the input/output circuit 11 a as a protective circuit is divided and formed into two nMISFET forming regions 21 b and 27 b and the diode element that is a protective element constituting the input/output circuit 11 a is divided and formed into two diode element forming regions 23 b and 25 b.
  • the pulling-out region 24 is arranged between a group including the nMISFET forming region 21 b and the diode element forming region 23 b and a group including the diode element forming region 25 b and the nMISFET forming region 27 b, and the wiring 53 b is pulled out there over the wirings 71 and 72 , the grounding wiring 7 and the power supply wiring 8 to be electrically connected to the conductive layer 51 .
  • the nMISFET that is a protective element constituting the input/output circuit 11 c as a protective circuit is divided and formed into two nMISFET forming regions 21 c and 27 c and the diode element that is a protective element constituting the input/output circuit 11 c is divided and formed into two diode element forming regions 23 c and 25 c.
  • the pulling-out region 24 is arranged between a group including the nMISFET forming region 21 c and the diode element forming region 23 c and a group including the diode element forming region 25 c and the nMISFET forming region 27 c, and the wiring 53 c is pulled out there over the wirings 71 and 72 , the power supply wiring 5 , the grounding wiring 6 , the grounding wiring 7 and the power supply wiring 8 to be electrically connected to the conductive layer 51 . It may be regarded that The pulling-out region 24 is arranged between the nMISFET forming regions 21 b and 27 b and that the pulling-out region 24 is arranged between the nMISFET forming regions 21 c and 27 c.
  • Such a configuration in the present embodiment enables providing substantially the same effect as the third embodiment.
  • the pulling-out region 24 is provided between the grounding wiring 7 and the power supply wiring 8 , and the wirings 53 b and 53 c are pulled out there over the wirings 71 and 72 , the grounding wiring 7 and the power supply wiring 8 to be connected to the conductive layer 51 , so that the bonding pads 4 d and 4 c can be arranged further inside, allowing the planar dimension of the semiconductor device (a semiconductor chip) to be reduced to downsize the semiconductor device.
  • each protective element (nMISFET and diode element) constituting the input/output circuits 11 ba and 11 c is divided into two regions to arrange the pulling-out region 24 : between the nMISFET forming regions 21 b and 27 b and between the diode element forming regions 23 b and 25 b; and between the nMISFET forming regions 21 c and 27 c and between the diode element forming regions 23 c and 25 c.
  • the wirings 53 b and 53 c are pulled out there to be connected to the conductive layer 51 .
  • the nMISFET forming region occupying a larger area than the diode element forming regions 23 b, 23 c, 25 b and 25 c is divided into two regions, between which and the pulling-out region 24 is arranged. That is, in the input/output circuit 11 b, the region for forming the nMISFET as a protective element is divided into the nMISFET forming regions 21 b and 27 b, between which the pulling-out region 24 is arranged. In the input/output circuit 11 c, the region for forming the nMISFET as a protective element is divided into the nMISFET forming regions 21 c and 27 c, between which the pulling-out region 24 is arranged.
  • the pulling-out region 24 to be arranged around the center of the regions for forming the input/output circuits 11 b and 11 c, which permits the bonding pads 4 d and 4 c to be arranged at a position near the center of the regions for forming the input/output circuits 11 b and 11 c.
  • the bonding pad 4 e can be arranged further inside by the position where the pulling-out region 24 is positioned further inside than the pMISFET forming region 27 c, thereby allowing the planar dimension of the semiconductor device to be reduced to downsize the semiconductor device.
  • the present embodiment provides the following effect.
  • the bonding pad 4 d is electrically connected to the power supply wiring 5 , the bonding pad 4 d is capable of supplying power supply electric potential (power supply voltage) to the power supply wiring 5 .
  • the wiring 72 is also connected to the conductive layer 51 for the bonding pad 4 d through the wiring 53 b and the pulling-out region 24 , the wiring 72 is also electrically connected to the bonding pad 4 d and the power supply wiring 5 to be supplied with power supply electric potential.
  • the bonding pad 4 e is electrically connected to the grounding wiring 6 , the bonding pad 4 e is capable of supplying grounding electric potential (grounding voltage) to the grounding wiring 6 .
  • the wiring 71 is also connected to the conductive layer 51 for the bonding pad 4 e through the wiring 53 c and the pulling-out region 24 , the wiring 71 is also electrically connected to the bonding pad 4 e and the grounding wiring 6 to be supplied with grounding electric potential.
  • the wiring 71 extends from over the nMISFET forming region 21 b and the diode element forming region 23 b to over the nMISFET forming region 21 c and the diode element forming region 23 c, the p-type semiconductor region 64 in the diode element forming regions 23 b and 25 b and the n-type semiconductor region 62 b in the nMISFET forming regions 21 b and 27 b can be connected to the wiring 71 (the wiring 71 electrically connected to the grounding wiring 6 ) extending thereover.
  • the wiring 72 extends from over the diode element forming region 25 b and the nMISFET forming region 27 b to over the diode element forming region 25 c and the nMISFET forming region 27 c, the n-type semiconductor region 63 in the diode element forming regions 23 c and 25 c and the n-type semiconductor region 62 b in the nMISFET forming regions 21 c and 27 c can be connected to the wiring 72 (the wiring 72 electrically connected to the power supply wiring 5 ) extending thereover.
  • the wirings 71 and 72 enables simplifying routing the wirings for connecting the diodes D 5 and D 6 and the nMISFETs Qn 5 and Qn 6 to the grounding wiring 6 and for connecting the diodes D 7 and D 8 and the nMISFETs Qn 7 and Qn 8 to the power supply wiring 5 .
  • the wiring for connecting the diodes D 5 and D 6 and the nMISFETs Qn 5 and Qn 6 to the grounding wiring 6 can be substantially equalized in length with the wiring for connecting the diodes D 7 and D 8 and the nMISFETs Qn 7 and Qn 8 to the power supply wiring 5 , which allows the performances of the semiconductor device to be further improved.
  • the present invention is suitable to be applied to a semiconductor device with bonding pads.

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US11/604,855 2005-11-30 2006-11-28 Semiconductor device Abandoned US20070120258A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US12/253,850 US7714357B2 (en) 2005-11-30 2008-10-17 Semiconductor device
US12/727,811 US8552561B2 (en) 2005-11-30 2010-03-19 Semiconductor device with output circuit arrangement
US14/011,704 US8946770B2 (en) 2005-11-30 2013-08-27 Semiconductor device with output circuit and pad
US14/591,817 US9093283B2 (en) 2005-11-30 2015-01-07 Semiconductor devices with output circuit and pad
US14/746,774 US9343460B2 (en) 2005-11-30 2015-06-22 Semiconductor device with output circuit and pad arrangements
US15/099,574 US9515019B2 (en) 2005-11-30 2016-04-14 Semiconductor device

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US12/727,811 Active US8552561B2 (en) 2005-11-30 2010-03-19 Semiconductor device with output circuit arrangement
US14/011,704 Active US8946770B2 (en) 2005-11-30 2013-08-27 Semiconductor device with output circuit and pad
US14/591,817 Active US9093283B2 (en) 2005-11-30 2015-01-07 Semiconductor devices with output circuit and pad
US14/746,774 Active US9343460B2 (en) 2005-11-30 2015-06-22 Semiconductor device with output circuit and pad arrangements
US15/099,574 Active US9515019B2 (en) 2005-11-30 2016-04-14 Semiconductor device

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US12/727,811 Active US8552561B2 (en) 2005-11-30 2010-03-19 Semiconductor device with output circuit arrangement
US14/011,704 Active US8946770B2 (en) 2005-11-30 2013-08-27 Semiconductor device with output circuit and pad
US14/591,817 Active US9093283B2 (en) 2005-11-30 2015-01-07 Semiconductor devices with output circuit and pad
US14/746,774 Active US9343460B2 (en) 2005-11-30 2015-06-22 Semiconductor device with output circuit and pad arrangements
US15/099,574 Active US9515019B2 (en) 2005-11-30 2016-04-14 Semiconductor device

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TWI396256B (zh) 2013-05-11
US9515019B2 (en) 2016-12-06
US20150287724A1 (en) 2015-10-08
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US20100171177A1 (en) 2010-07-08
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US20160233154A1 (en) 2016-08-11
US9093283B2 (en) 2015-07-28
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US20130341728A1 (en) 2013-12-26
CN1976032A (zh) 2007-06-06
US8946770B2 (en) 2015-02-03
CN101685818B (zh) 2013-08-28
US7714357B2 (en) 2010-05-11
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US8552561B2 (en) 2013-10-08
TW201330176A (zh) 2013-07-16
US9343460B2 (en) 2016-05-17
TWI570844B (zh) 2017-02-11
US20090050940A1 (en) 2009-02-26
US20150108579A1 (en) 2015-04-23
TW201539662A (zh) 2015-10-16
CN101937916A (zh) 2011-01-05
TW200735277A (en) 2007-09-16
KR101336355B1 (ko) 2013-12-04
CN101685818A (zh) 2010-03-31

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