US20060232753A1 - Liquid immersion lithography system with tilted liquid flow - Google Patents

Liquid immersion lithography system with tilted liquid flow Download PDF

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Publication number
US20060232753A1
US20060232753A1 US11/108,673 US10867305A US2006232753A1 US 20060232753 A1 US20060232753 A1 US 20060232753A1 US 10867305 A US10867305 A US 10867305A US 2006232753 A1 US2006232753 A1 US 2006232753A1
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United States
Prior art keywords
liquid
substrate
tilted
immersion lithography
liquid flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/108,673
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English (en)
Inventor
Aleksandr Khmelichek
Louis Markoya
Harry Sewell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Priority to US11/108,673 priority Critical patent/US20060232753A1/en
Assigned to ASML HOLDING N.V. reassignment ASML HOLDING N.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MARKOYA, LOUIS, SEWELL, HARRY, KHMLICHEK, ALEKSANDR
Priority to US11/403,196 priority patent/US7256864B2/en
Priority to TW099116721A priority patent/TWI421652B/zh
Priority to TW095113826A priority patent/TWI336426B/zh
Priority to CN2010101174178A priority patent/CN101776848B/zh
Priority to KR1020077023958A priority patent/KR100897863B1/ko
Priority to EP06733009A priority patent/EP1872175A1/en
Priority to US11/911,704 priority patent/US8203693B2/en
Priority to CN2006800132610A priority patent/CN101164015B/zh
Priority to JP2008507572A priority patent/JP4848003B2/ja
Priority to KR1020087025416A priority patent/KR101131477B1/ko
Priority to PCT/NL2006/000202 priority patent/WO2006112699A1/en
Publication of US20060232753A1 publication Critical patent/US20060232753A1/en
Priority to US11/586,639 priority patent/US7253879B2/en
Abandoned legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Definitions

  • the present invention is related to liquid immersion lithography, and more particularly, to efficient recirculation of liquid in immersion lithography systems.
  • An integrated circuit integrates a large number of electronic circuit elements, including transistors.
  • the circuit elements are manufactured and interconnected on a semiconductor substrate, e.g., on a single crystalline silicon wafer.
  • the wafers undergo cycles of film deposition and lithography, in addition to other processing.
  • Film deposition is the process of depositing a layer of material, e.g., insulating or metallic, over the entire substrate;
  • lithography is the process of patterning the deposited layer.
  • the first step in lithography involves coating the wafer with photoresist that is sensitive to particular radiation, typically ultra-violet light.
  • exposure the substrate is exposed to a radiation pattern stored on a mask, also called a reticle.
  • Radiation locally changes the physical or chemical properties of the photoresist, and the exposed (or unexposed) areas are selectively dissolved during a developing step that leaves behind a pattern of photoresist.
  • the patterned photoresist provides a pattern for a subsequent etching step.
  • the etching step removes undesired areas of the deposited layer, leaving behind structures associated with circuit elements, such as wires, resistors and transistors, and the like.
  • the resolution can be decreased, i.e., improved, in one of three ways.
  • the wavelength ⁇ of the projected light can be decreased. A shorter wavelength, however, may require new photoresist and a number of changes in the projection device, such as using a different light source and light filters, and special lenses for the projection optics.
  • the resolution can be decreased by decreasing the adjustment factor k 1 . Decreasing k 1 may also require the use of different photoresist and high precision tools.
  • the marginal angle ⁇ can be increased by increasing the size of the projection optics. The effect of this increase, however, is limited by the sine function above.
  • One way to reduce the wavelength ⁇ of the projected light is through the use of immersion lithography, where a liquid is injected between the projection optics and the wafer, taking advantage of the higher refractive index of the liquid compared to air (and, therefore, resulting in a smaller effective wavelength ⁇ ).
  • the immersion liquid is generally recirculated, using some form of an injection system to inject the liquid into the volume between the projection optics and the substrate, and extracted using some form of a extraction, or suction system to extract the liquid from the exposure area back into recirculation.
  • the liquid can get contaminated, for example, due to pickup of particles from the air, or due to pickup of material from the photo resist that is being exposed.
  • filtering systems are in place to remove the contaminants.
  • not all of the liquid that is injected into the exposure area can actually be recirculated. This is due to the surface tension that exists between the liquid and the substrate surface.
  • the present invention is directed to liquid immersion lithography system with tilted liquid flow that substantially obviates one or more of the problems and disadvantages of the related art.
  • a liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate.
  • the showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.
  • a liquid immersion lithography system in another aspect, includes a projection optical system for exposing a substrate, an injection nozzle and a retrieval nozzle for delivering tilted liquid flow between the projection optical system and the substrate.
  • the liquid flow is tilted at approximately 1 to 2 degrees relative to the substrate.
  • an exposure system in order of light propagation, an illumination source, a condenser lens, a mask (or contrast device) and projection optics.
  • a liquid delivery system provides liquid to an exposure area below the projection optics.
  • the exposure system also includes means for providing tilted liquid flow of the liquid.
  • an exposure system in another aspect, includes, in order of light propagation, an illumination source, a condenser lens, a mask and projection optics.
  • a liquid delivery system provides liquid to an exposure area of a substrate. The substrate is tilted relative to a horizontal.
  • FIG. 1 illustrates one embodiment of the invention that uses a tilted showerhead for injection and extraction of the immersion liquid.
  • FIG. 2 illustrates a close-up view of the tilted showerhead arrangement of FIG. 1 .
  • FIG. 3 is another illustration of the exposure area of a liquid immersion lithography system with a liquid in the exposure area.
  • FIG. 4 illustrates a meniscus region A of FIG. 3 .
  • FIG. 5 illustrates a meniscus region B of FIG. 3 .
  • FIG. 6 illustrates a three-dimensional isometric view of the embodiment illustrated in FIGS. 1 -5.
  • FIG. 7 shows an exemplary photolithographic system that uses the tilted showerhead.
  • FIG. 7 shows an exemplary photolithographic system that uses the tilted showerhead.
  • the lithographic system 700 (shown in side view) includes a light source (illumination source) 710 , such as a laser or a lamp, illumination optics 712 (such as a condenser lens), and a reticle (i.e., a, mask, or a contrast device) 714 , which is usually mounted on a reticle stage (not shown).
  • the reticle 714 can be a plate with an exposure pattern on it, or a spatial light modulator array, such as used in maskless lithography.
  • Light from the reticle 714 is imaged onto a wafer 718 using projection optics 716 .
  • the wafer 718 is mounted on a wafer stage 720 .
  • FIG. 1 illustrates one embodiment of the invention that uses a tilted showerhead for injection and extraction of the immersion liquid.
  • the projection optics 716 is mounted above a substrate, such as the semiconductor wafer 718 .
  • One portion of a showerhead is used for liquid injection, and a second portion of the showerhead is used for liquid extraction.
  • FIG. 1 thus illustrates a cross-sectional view (at the top) and a plan view (at the bottom) of one embodiment of the immersion lithography system with tilted liquid flow arrangement.
  • a lower portion of the projection optical system 716 is located above the wafer 718 (note that the last element of the projection optical system 716 can be a prism, or a lens, or a glass window).
  • a immersion head, or shower head 110 which is shown in cross section.
  • Liquid flow enters the exposure area through an injection nozzle 106 , and exits through a retrieval, or suction, nozzle 108 . Note the different heights of the injection nozzle 106 and the retrieval nozzle 108 in the exposure area illustrated in more detail in FIG. 2 , which provides for a height differential, and therefore for a tilted liquid flow.
  • the dimension of the gap between the lowest element of the projection optics 716 (which can be either a lens or a prism) and the surface of the substrate 718 is usually on the order of approximately one millimeter (typically ranging between about 0.5 millimeters and 2 millimeters).
  • the relative arrangement of the two nozzles is such that there is a natural gravity-induced liquid flow from the injection showerhead to the extraction showerhead.
  • the tilt can be relatively small, even as little as one or two degrees. Note that the important aspect is the relative arrangement of the injection and extraction nozzles, such that there is a relative tilt of the liquid flow compared to the plane of the wafer 102 (which is normally horizontal).
  • FIG. 2 illustrates a close up view of the tilted nozzle arrangement. Note in particular the bottom surface of the showerhead, labeled X in FIG. 2 , which is tilted at approximately one or two degrees as shown in the figure. Note also that the suction nozzle 108 is located below a bottom surface 202 of the projection optical system 716 by a distance t (see left hand side of the figure).
  • FIG. 3 is another illustration of the exposure area of a liquid immersion lithography system, similar to FIG. 2 , but showing a liquid 302 in the exposure area, as would be the case during actual operation of the device. Note also a withdrawal pressure p w , and two regions A and B, which include two meniscus regions, discussed further below.
  • FIG. 4 illustrates a meniscus region A from FIG. 3 .
  • FIG. 6 is another illustration of the embodiment illustrated in FIGS. 1-5 , in this case, a three-dimensional isometric view. Shown in FIG. 6 is the wafer 718 positioned below the projection system 716 (only a portion of which is shown). The showerhead 110 is visible in the figure, with the liquid 302 flowing under the projection optical system 716 .
  • the wafer 718 is kept perfectly horizontal (or, as horizontal as practical), to ensure good image quality.
  • Such an approach is more complicated to implement than the embodiment described above, since tilting the entire lithographic tool may be undesirable or mechanically problematic.
  • such a tilting of the entire lithographic tool will accomplish the same purpose—creation of a preferred direction of liquid flow even in the absence of suction pressure for extraction.
  • the tilting effect can be simulated using forced air flow.
  • an air pressure gradient in the direction from the injection port to the extraction port will also achieve a similar effect—that is, overcoming the surface tension forces that otherwise impede liquid flow.

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
US11/108,673 2005-04-19 2005-04-19 Liquid immersion lithography system with tilted liquid flow Abandoned US20060232753A1 (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
US11/108,673 US20060232753A1 (en) 2005-04-19 2005-04-19 Liquid immersion lithography system with tilted liquid flow
US11/403,196 US7256864B2 (en) 2005-04-19 2006-04-13 Liquid immersion lithography system having a tilted showerhead relative to a substrate
TW099116721A TWI421652B (zh) 2005-04-19 2006-04-18 浸潤式微影系統及方法
TW095113826A TWI336426B (en) 2005-04-19 2006-04-18 Immersion lithography system and method for manufacturing a device in a lithography apparatus
PCT/NL2006/000202 WO2006112699A1 (en) 2005-04-19 2006-04-19 Liquid immersion lithography system comprising a tilted showerhead
EP06733009A EP1872175A1 (en) 2005-04-19 2006-04-19 Liquid immersion lithography system comprising a tilted showerhead
KR1020077023958A KR100897863B1 (ko) 2005-04-19 2006-04-19 침지 리소그래피 시스템 및 침지 리소그래피 방법
CN2010101174178A CN101776848B (zh) 2005-04-19 2006-04-19 浸没式光刻系统
US11/911,704 US8203693B2 (en) 2005-04-19 2006-04-19 Liquid immersion lithography system comprising a tilted showerhead relative to a substrate
CN2006800132610A CN101164015B (zh) 2005-04-19 2006-04-19 具有相对衬底倾斜的喷洒头的液体浸没光刻系统
JP2008507572A JP4848003B2 (ja) 2005-04-19 2006-04-19 傾斜したシャワーヘッドを備える液浸リソグラフィシステムおよび液浸リソグラフィ方法
KR1020087025416A KR101131477B1 (ko) 2005-04-19 2006-04-19 침지 리소그래피 시스템 및 침지 리소그래피 방법
US11/586,639 US7253879B2 (en) 2005-04-19 2006-10-26 Liquid immersion lithography system with tilted liquid flow

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/108,673 US20060232753A1 (en) 2005-04-19 2005-04-19 Liquid immersion lithography system with tilted liquid flow

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/403,196 Continuation-In-Part US7256864B2 (en) 2005-04-19 2006-04-13 Liquid immersion lithography system having a tilted showerhead relative to a substrate
US11/586,639 Continuation US7253879B2 (en) 2005-04-19 2006-10-26 Liquid immersion lithography system with tilted liquid flow

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US20060232753A1 true US20060232753A1 (en) 2006-10-19

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US11/108,673 Abandoned US20060232753A1 (en) 2005-04-19 2005-04-19 Liquid immersion lithography system with tilted liquid flow
US11/403,196 Expired - Fee Related US7256864B2 (en) 2005-04-19 2006-04-13 Liquid immersion lithography system having a tilted showerhead relative to a substrate
US11/911,704 Expired - Fee Related US8203693B2 (en) 2005-04-19 2006-04-19 Liquid immersion lithography system comprising a tilted showerhead relative to a substrate
US11/586,639 Expired - Fee Related US7253879B2 (en) 2005-04-19 2006-10-26 Liquid immersion lithography system with tilted liquid flow

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Application Number Title Priority Date Filing Date
US11/403,196 Expired - Fee Related US7256864B2 (en) 2005-04-19 2006-04-13 Liquid immersion lithography system having a tilted showerhead relative to a substrate
US11/911,704 Expired - Fee Related US8203693B2 (en) 2005-04-19 2006-04-19 Liquid immersion lithography system comprising a tilted showerhead relative to a substrate
US11/586,639 Expired - Fee Related US7253879B2 (en) 2005-04-19 2006-10-26 Liquid immersion lithography system with tilted liquid flow

Country Status (7)

Country Link
US (4) US20060232753A1 (ko)
EP (1) EP1872175A1 (ko)
JP (1) JP4848003B2 (ko)
KR (2) KR100897863B1 (ko)
CN (2) CN101164015B (ko)
TW (2) TWI421652B (ko)
WO (1) WO2006112699A1 (ko)

Cited By (7)

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US20060238721A1 (en) * 2005-04-19 2006-10-26 Asml Holding N.V. Liquid immersion lithography system having a tilted showerhead relative to a substrate
US20060281028A1 (en) * 2005-06-09 2006-12-14 Sheng Peng Processes and devices using polycyclic fluoroalkanes in vacuum and deep ultraviolet applications
US20080032234A1 (en) * 2004-09-17 2008-02-07 Takeyuki Mizutani Exposure Apparatus, Exposure Method, and Method for Producing Device
US20090279058A1 (en) * 2005-03-02 2009-11-12 Noriyasu Hasegawa Exposure apparatus
US20110069297A1 (en) * 2009-09-21 2011-03-24 Asml Netherlands B.V. Lithographic apparatus, coverplate and device manufacturing method
US20110069289A1 (en) * 2009-09-21 2011-03-24 Asml Netherlands B.V. Lithographic apparatus, coverplate and device manufacturing method
US8836915B2 (en) 2011-02-25 2014-09-16 Asml Netherlands B.V. Lithographic apparatus, a method of controlling the apparatus and a device manufacturing method

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US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4752374B2 (ja) * 2005-07-27 2011-08-17 株式会社ニコン 露光装置、液体保持方法、及びデバイス製造方法
JP4706422B2 (ja) * 2005-09-30 2011-06-22 株式会社ニコン 露光装置及びデバイス製造方法
NL1036186A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
KR101408783B1 (ko) * 2007-12-07 2014-06-17 삼성전자주식회사 반도체 소자의 제조장치 및 이를 이용한 반도체 소자의제조방법
NL2004362A (en) * 2009-04-10 2010-10-12 Asml Netherlands Bv A fluid handling device, an immersion lithographic apparatus and a device manufacturing method.
US10948830B1 (en) 2019-12-23 2021-03-16 Waymo Llc Systems and methods for lithography

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CN101164015B (zh) 2010-11-24
KR20080096609A (ko) 2008-10-30
JP2008537356A (ja) 2008-09-11
JP4848003B2 (ja) 2011-12-28
TWI336426B (en) 2011-01-21
US20070041002A1 (en) 2007-02-22
CN101164015A (zh) 2008-04-16

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