US20060000814A1 - Laser-based method and system for processing targeted surface material and article produced thereby - Google Patents

Laser-based method and system for processing targeted surface material and article produced thereby Download PDF

Info

Publication number
US20060000814A1
US20060000814A1 US11/152,509 US15250905A US2006000814A1 US 20060000814 A1 US20060000814 A1 US 20060000814A1 US 15250905 A US15250905 A US 15250905A US 2006000814 A1 US2006000814 A1 US 2006000814A1
Authority
US
United States
Prior art keywords
surface material
indicia
laser output
region
targeted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/152,509
Other languages
English (en)
Inventor
Bo Gu
Jonathan Ehrmann
Donald Svetkoff
Steven Cahill
Kevin Sullivan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US11/152,509 priority Critical patent/US20060000814A1/en
Priority to JP2007519283A priority patent/JP2008504964A/ja
Priority to EP05773635A priority patent/EP1779286B1/en
Priority to PCT/US2005/021955 priority patent/WO2006012124A2/en
Priority to AT05773635T priority patent/ATE550132T1/de
Priority to KR1020077002121A priority patent/KR101278433B1/ko
Assigned to GSI GROUP CORPORATION reassignment GSI GROUP CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CAHILL, STEVEN P., SVETKOFF, DONALD J., GU, BO, EHRMANN, JONATHAN S., SULLIVAN, KEVIN E.
Publication of US20060000814A1 publication Critical patent/US20060000814A1/en
Priority to US11/514,660 priority patent/US7469831B2/en
Priority to US11/801,706 priority patent/US20080073438A1/en
Assigned to ELECTRO SCIENTIFIC INDUSTRIES, INC. reassignment ELECTRO SCIENTIFIC INDUSTRIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GSI GROUP CORPORATION, GSI GROUP INC
Assigned to ELECTRO SCIENTIFIC INDUSTRIES, INC. reassignment ELECTRO SCIENTIFIC INDUSTRIES, INC. CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION SERIAL NUMBER 11776904 PREVIOUSLY RECORDED ON REEL 030582 FRAME 0160. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: GSI GROUP CORPORATION, GSI GROUP INC.
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y80/00—Products made by additive manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/24—Ablative recording, e.g. by burning marks; Spark recording
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K1/00—Methods or arrangements for marking the record carrier in digital fashion
    • G06K1/12—Methods or arrangements for marking the record carrier in digital fashion otherwise than by punching
    • G06K1/126—Methods or arrangements for marking the record carrier in digital fashion otherwise than by punching by photographic or thermographic registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54406—Marks applied to semiconductor devices or parts comprising alphanumeric information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54413—Marks applied to semiconductor devices or parts comprising digital information, e.g. bar codes, data matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0266—Marks, test patterns or identification means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation

Definitions

  • the present invention relates to laser marking and texturing, particularly forming at least semi-permanent or erasable indicia on one or more materials of a microelectronic device.
  • the materials may include semiconductor substrates, thin films, metallization, and dielectric layers.
  • One or more embodiments may also be applied for forming indicia on MEMs, optoelectronic devices, or biomedical microchips.
  • Various embodiments are useable for various micromachining or microfabrication applications.
  • Silicon wafer marking was used for identification at wafer level. Initially driven by the Known Good Die, and more recently by traceability and component identification, laser marking on the backside of the wafer at the die level has become the trend, and applied to various packaging technologies, including MCM, Flip Chip, DCA, and CSP. For the past years, research and development effort occurred to develop such a marking tool for production.
  • wafer thickness specifications of 300 to 700 microns ( ⁇ m) were typical.
  • die used in DCA (Direct Chip Attach) applications are in the 3 mm to 8 mm dimension.
  • products like the RFID tags can be as small as 0.3 mm yet require much of the same information that is included in large die marking. This trend creates the need for further development in die marking to shrink the actual alphanumeric character sizes.
  • Desirable advancements for precision laser marking systems includes: increasing mark density (e.g., smaller effective dot size or line width), control over the marking depth, and improved mark repeatability with control of or substantial elimination of a heat affected zone.
  • improvement of readability e.g., mark contrast with the background
  • angle independent contrast e.g., angle independent contrast.
  • the ideal mark will be formed with little or no material removed, and will provide contrast that will survive through one or more subsequent fabrication steps. Further, shrinking sizes are expected to mandate increasing density requirements, for instance, font sizes less than 0.3 mm and decreased font spacing.
  • An object of at least one embodiment of the invention is to provide a method of forming indicia/texture on at least one material of a microelectronic article.
  • the method includes the step of applying a pulsed laser output to a localized region of the material, the output having sufficient total fluence to initiate ablation within at least a portion of the region and a pulse width short enough such that the region and proximate material surrounding the region are substantially slag-free.
  • Another object of at least one embodiment of the invention is to provide an article of manufacture produced by the above method.
  • Yet another object of at least one embodiment of the invention is to provide a laser marking/texturing system for carrying out the above method.
  • a method for processing targeted surface material within a region of a workpiece while avoiding undesirable changes to adjacent non-targeted material includes generating a pulsed laser output including at least one pulse having a wavelength and a pulse width.
  • the method further includes irradiating the targeted surface material of the workpiece with the pulsed laser output including the at least one pulse to texture the targeted surface material.
  • the pulsed laser output has sufficient total fluence to initiate ablation within at least a portion of the targeted surface material and the pulse width is short enough such that the region and non-targeted material surrounding the region are substantially free of slag.
  • the textured surface material may include indicia.
  • the indicia may be at least semi-permanent or erasable.
  • the workpiece may be a microelectronic device and the textured surface material may be a microelectronic material.
  • the targeted surface material may be at least one of a semiconductor substrate, a thin film, a metal layer and a dielectric layer.
  • the workpiece may be one of a MEMs device, an optoelectronic device and a biomedical chip.
  • the non-targeted surface material may include indicia.
  • the indicia may be machine-readable.
  • the indicia may have a font size less than 0.3 mm.
  • the textured surface material may include a microtextured pattern formed on the workpiece.
  • the workpiece may be a semiconductor wafer and wherein the microtextured pattern forms indicia on the wafer.
  • the method may further include generating a secondary laser output and irradiating the textured surface material with the secondary laser output to process the textured surface material.
  • the textured surface material may include indicia, and the indicia may be erased during the step of irradiating with the secondary laser output.
  • the textured surface material may be formed on at least one side of the workpiece.
  • the workpiece may be a semiconductor wafer.
  • the step of generating may be at least partially performed with a femtosecond or picosecond laser.
  • the pattern may be a bar pattern, an alphanumeric character string, or a logotype.
  • the pulse width of the at least one pulse may be below about 1 ns.
  • the pulse width may be about 100 ps or less, or may be less than about 10 ps.
  • the textured surface material may include microtextured surface material.
  • the microtextured surface material may include nanotextured surface material.
  • the total fluence may be measurable over a spatial dimension of a spot of the output.
  • the textured surface material may include indicia, and the step of irradiating may include the step of directing the laser output in response to at least one control signal that represents a first location of at least a part of the indicia to impinge the region at the first location.
  • the region may be within the spatial dimension of the spot.
  • the step of irradiating may substantially increase surface roughness of the targeted surface material within at least a portion of the region.
  • the non-targeted surface material surrounding the region may have a surface with a strong specular reflection component.
  • Diffuse reflectance of the indicia may be in a range of 0.5% to 5%.
  • the total fluence may exceed about 0.1 J/cm 2 .
  • the wavelength may be less than an absorption edge of the targeted surface material.
  • the wavelength may be ultraviolet.
  • the pulse width of the at least one pulse may be in a range of about 15 fs to 500 ps.
  • the pulse width of the at least one pulse may be in a range of about 100 fs to 50 ps, or may be in a range of about 300 fs to 15 ps.
  • the targeted surface material may be silicon, or may be a metal or a dielectric.
  • the targeted surface material may be a portion of a dielectric passivation layer.
  • the dielectric of the layer may be an inorganic, organic, or a low-k dielectric.
  • the targeted surface material may be part of a MEM device.
  • a portion of the indicia may have surface variations in a range of about 0.25 microns to about 1 micron.
  • a feature dimension of the indicia may be in a range of several microns to tens of microns, or may be a few wavelengths of the at least one pulse.
  • the step of irradiating may include the step of controlling polarization of the pulsed laser output to enhance or control a characterization of the textured surface material.
  • the pulsed laser output may include a focused laser processing beam
  • the step of irradiating may include the step of relatively moving the workpiece and the focused laser processing beam.
  • the textured surface material may include a microtextured pattern, and the step of relatively moving may create the microtextured pattern on the workpiece.
  • the step of irradiating may include the step of shaping the spot to obtain a shaped spot.
  • the shaped spot may have a top-hat irradiance profile.
  • the shaped spot may have a depressed center with energy concentrated in a perimeter of the shaped spot.
  • the step of irradiating may include the step of controlling an aspect of the spot.
  • the wavelength may be below an absorption edge of a material of the workpiece.
  • the pulsed laser output may finely texture the targeted surface material and the secondary laser output may coarsely process the textured surface material.
  • the pulsed laser output may coarsely texture the targeted surface material and the secondary laser output may finely process the textured surface material.
  • the textured surface material may include indicia, and a negative window mark may be created during the step of irradiating with the secondary laser output.
  • the textured surface material may include a pattern, and the step of irradiating with the secondary laser output may micromachine the pattern.
  • the step of irradiating with the secondary laser output may trim an electrical or mechanical parameter of the textured surface material.
  • the secondary laser output may include at least one pulse having a wavelength which is absorbed into the textured surface material.
  • the wavelength of the at least one pulse of the secondary beam may or may not be absorbed into the non-targeted material surrounding the region.
  • a system for processing targeted surface material within a region of a workpiece while avoiding undesirable changes to adjacent non-targeted material includes a primary laser subsystem which includes a primary laser source for generating a pulsed laser output including at least one pulse having a wavelength and a pulse width.
  • the system further includes a delivery subsystem for irradiating the targeted surface material of the workpiece with the pulsed laser output including the at least one pulse to texture the targeted surface material.
  • the pulsed laser output has sufficient total fluence to initiate ablation within at least a portion of the targeted surface material.
  • the pulse width is short enough such that the region and the non-targeted material surrounding the material are substantially free of slag.
  • the primary laser source may include an ultrafast laser.
  • the ultrafast laser may be a picosecond laser, or may be a femtosecond laser.
  • the delivery subsystem may include a controller that accepts data that represents a location of the targeted surface material to be textured and produces at least one position control signal.
  • the delivery subsystem may include a positioning subsystem for directing the laser output to the location of the targeted surface material so as to texture the targeted surface material in response to the at least one position control signal.
  • the system may further include a secondary laser subsystem which includes a secondary laser source for generating a secondary laser output which irradiates the textured surface material.
  • the secondary laser output may at least erase, micromachine, weld or actuate the region of the textured surface material.
  • the secondary laser source may include one of a pulsed, modulated or CW source.
  • Irradiation with the secondary laser output may be below the fluence breakdown threshold of the targeted surface material to heat the region.
  • Irradiation with the secondary laser output may be above the fluence breakdown threshold of the targeted surface material to effect at least one property change of the targeted surface material.
  • the secondary laser output may include at least one pulse having a wavelength near or exceeding the absorption edge of the material of the workpiece.
  • the primary laser source may include the secondary laser source or may be separate from the secondary laser source.
  • the delivery subsystem may include a polarization controller for controlling polarization of the laser output.
  • the primary laser source may include a diode-pumped, solid-state UV laser, and the pulse width may be less than about 20 ns.
  • the pulse width may be less than 1 ns.
  • the positioning subsystem may include at least one translation stage to move the workpiece relative to the laser output.
  • the positioning subsystem may include fine and coarse positioners.
  • the positioning subsystem may include translation and rotation stages to move the workpiece relative to the laser output.
  • the positioning subsystem may include an optical scanner to move the laser output relative to the workpiece.
  • the positioning subsystem may include two or more stages and scanners to move the laser output relative to the workpiece.
  • the laser output may be a laser beam having a beam waist.
  • the positioning subsystem may include at least one component for moving the beam waist relative to the workpiece.
  • the delivery subsystem may include a focusing subsystem.
  • the focusing subsystem may be a refractive optical subsystem.
  • the system may further include an inspection subsystem for inspecting the textured surface material.
  • the inspection subsystem may include a machine vision subsystem.
  • the primary laser source may include a mode-locked oscillator and a diode-pumped, solid-state laser amplifier.
  • the optical scanner may be a two-dimensional, galvanometer-based scanner.
  • the at least one position control signal may be produced during at least one step of manufacturing an article from the workpiece.
  • the primary laser subsystem may include a seed laser and a fiberoptic amplifier.
  • the primary laser subsystem may further include a frequency-doubled, diode-pumped, solid-state laser.
  • the primary laser subsystem may still further include a mode-locked oscillator, a diode-pumped, solid-state laser amplifier, and a wavelength shifter.
  • the primary laser subsystem may yet further include one of a frequency doubler, a frequency tripler and a frequency quadrupler.
  • the laser output may have a repetition rate greater than 10 KHz.
  • the laser output may have an average laser output power in the range of 0.01 W-2 W.
  • the textured surface material may include indicia.
  • the system may further include a viewing subsystem for reading the indicia.
  • the viewing subsystem may include an illuminator and an electronic imaging subsystem.
  • the illuminator may be one of a bright-field, a dark-field, and a combination of both bright- and dark-field.
  • an article of manufacture is provided. At least one surface material has discernible indicia formed thereon during at least one step of manufacturing the article.
  • the indicia are formed by a method of selectively irradiating targeted surface material within a region of a workpiece with a pulsed laser output.
  • the indicia are at least semi-permanent and useable during a subsequent step of manufacturing the article.
  • the region and non-targeted material surrounding the region are substantially slag-free. Surface roughness is increased within at least a portion of the region during the at least one step of manufacturing, thereby reducing reflection of energy used for reading the indicia.
  • High reflectance contrast may be obtained between the region and a background of the region over a wide range of viewing angles.
  • a surface of the background of the region may have a strong specular reflection component.
  • Reflectance contrast between the discernible indicia and a background of the region may exceed 30:1 over an angular viewing range of at least 20 degrees.
  • the indicia may include an alphanumeric indicium having a font dimension 0.3 mm or finer.
  • the indicia may include a two-dimensional matrix code.
  • the indicia may be useable for one or more steps of manufacturing the article in addition to identification.
  • the indicia may be distinguishable from a background of the region with a roughness measurement obtained by at least one of SEM (scanning electron microscope) data, and AFM (atomic force microscope) data.
  • DIN 4768 roughness measurement standards may be utilized to compare roughness of a portion of the indicia with a background of the region.
  • the indicia may be distinguishable from a background of the region with a measurement of image contrast.
  • the indicia may be machine readable, and may appear as a sequence of non-overlapping dots that form a dot matrix code.
  • the indicia may be usable in at least one of traceability, component identification, and sorting.
  • FIG. 1 is a schematic block diagram showing some elements of a laser processing system corresponding to one embodiment of the present invention wherein a microtextured pattern is formed on a workpiece, for instance, to form indicia on a portion of a semiconductor wafer;
  • FIG. 2 is a schematic block diagram showing some elements of a laser processing system corresponding to one embodiment of the present invention wherein a microtextured pattern, which may be formed with the system of FIG. 1 a , is further processed with a secondary beam, for instance to erase a mark;
  • FIGS. 3 and 4 illustrate some details of first and second sides of semiconductor wafer, an example of a workpiece which may be processed with various embodiments of the present invention
  • FIG. 5 is a schematic illustrating an exemplary microtextured region which may be formed with a femtosecond laser system
  • FIGS. 6 and 7 are schematics comparing prior art marks with marks formed in accordance with the present invention, and illustrate improved density of a dot matrix pattern
  • FIGS. 8 and 9 are schematics comparing prior art marks with marks formed in accordance with the present invention, and illustrate improved density of a bar pattern
  • FIGS. 10 and 11 are schematics illustrating, by way of example, a prior art laser mark formed on a specular surface, for instance bare silicon, and a corresponding surface profile showing exemplary defects associated with a deep (“hard”) mark—for instance slag and melted zones, debris, and microcracking;
  • a deep (“hard”) mark for instance slag and melted zones, debris, and microcracking
  • FIGS. 12 and 13 are schematics illustrating, by way of example, a mark formed on the specular surface of FIG. 10 using a system of the present invention and an exemplary profile for comparison with FIGS. 10 and 11 ;
  • FIGS. 14 and 15 are schematic block diagrams showing some elements of a semiconductor wafer processing system
  • FIGS. 16 and 17 illustrate subsystems of a semiconductor wafer processing system corresponding to FIGS. 14 and 15 in further detail;
  • FIGS. 18 and 19 show some components of an exemplary laser beam positioning system which may be included in FIG. 1 or FIG. 2 for practicing various embodiments of the present invention
  • FIG. 20 is a schematic block diagram, similar to FIG. 16 , showing some elements of a semiconductor wafer processing system, specifically, elements related to secondary processing of FIG. 2 ;
  • FIGS. 21 and 22 illustrate the structure of various laser marks produced with conventional and more recent laser marking systems for further comparison with a marks formed in accordance with the present invention
  • FIG. 23 illustrates removing material, for instance, erasing a mark using a secondary processing beam corresponding, for example, to FIG. 2 ;
  • FIG. 24 illustrates removing material, for instance, modifying a microtextured pattern, using a secondary processing beam corresponding, for example, to FIG. 2 ;
  • FIGS. 24-37 d illustrate various examples and results wherein silicon wafers having ground, polished, smooth, or rough surfaces are marked in accordance with the present invention.
  • Ultrafast laser or “ultrashort laser” generally refers to a pulsed laser providing one or more pulses, each pulse having a duration below 1 ns, for instance 100 ps or less, or typically less than 10 ps;
  • Microtexture generally refers to micron sized surface variations, but may also include surface variations of a finer scale, for instance 0.5 microns or 0.1 microns;
  • “Nanotexture” generally refers to surface variations below one micron in size.
  • New laser marking technology has been developed to overcome limitations of present laser marking systems. Permanent and high contrast shallow marks (less than 1 micron) on the backside of wafers are achieved with little or no material removed by using this new laser technology. Viewing of these marks is strongly independent of the viewing angle, a significant advancement.
  • the so-called micro marking technology allows the mark font size to be much less than 0.3 mm.
  • At least one embodiment of the invention may be applied to micro machining of fine, laser-marked patterns.
  • One or more embodiments of the invention may be applicable to laser micro assembly techniques for silicon articles including laser welding and laser actuation of micro device members.
  • One aspect of the invention features a method of marking a material of a microelectronic device with a pulsed laser output to form high-density, discernible indicia on the material.
  • the method includes: generating a pulsed laser output having at least one pulse with a pulse duration less than about 1 ns and having total fluence sufficient to initiate ablation of a portion of the material, the fluence being measurable over a spatial spot dimension of the output.
  • the method further includes directing the laser output in response to at least one control signal that defines a first location of at least a portion of indicia to be formed on the material, to impinge a localized region of the material at the first location, the localized region being within the spatial spot dimension.
  • the laser output initiates ablation of at least a portion of the material and substantially increases surface roughness within at least the portion of the region.
  • the region and background material that proximately surrounds the region are both substantially slag-free.
  • a background surface may have a strong specular reflection component.
  • the diffuse reflectance of the indicia may be in a range of 0.5% to 5%.
  • the total fluence may exceed about 0.1 J/cm 2 .
  • the laser output may have a wavelength less than an absorption edge of the material.
  • the laser wavelength may be ultraviolet.
  • the pulse duration may be in the range of about 15 fs to 500 ps.
  • the pulse duration may be in the range of about 100 fs to 50 ps.
  • the pulse duration may be in the range of about 300 fs to 15 ps.
  • the material may be silicon.
  • the material may be a metal or dielectric.
  • the material may be a portion of a dielectric passivation layer, and the dielectric may be inorganic, organic, or a Low-k dielectric.
  • the material may be part of a MEM device.
  • a portion of the indicia may have surface height variations in the range of about 0.25 microns to about 1 micron.
  • a feature dimension of the indicia may be in the range of several microns to tens of microns.
  • a feature dimension of the indicia may be a few optical wavelengths.
  • the marking system includes: means for generating a pulsed laser output having at least one pulse with a pulse duration less than about 1 ns and having total fluence over a spatial region of the output sufficient to initiate ablation of a portion of a material to be marked; a controller that accepts data that define indicia to be formed on a material of a microelectronic article and produces at least one position control signal to direct a laser output to mark the material and thereby form the indicia; and means for directing the laser output to a surface location of the material to be marked so as to form discernible, high contrast, high-density indicia on the material surface.
  • the means for directing may include an optical scanner.
  • the means for directing may include a positioning subsystem for positioning the material relative to the laser beam in three dimensions.
  • the positioning subsystem may have three or more degrees of freedom.
  • the optical scanner may be a two-dimensional, galvanometer-based scanner.
  • the means for directing may include an X-Y stage and a beam deflector coupled to the controller.
  • the position control signal may be produced during at least one step of manufacturing the article.
  • the means for generating may includes a seed laser and a fiber optic amplifier.
  • the means for generating may include a frequency doubled, diode-pumped, solid-state laser.
  • the means for generating may include a mode-locked oscillator, a diode-pumped, solid-state laser amplifier, and a wavelength shifter.
  • the means for generating may include a frequency doubler, frequency tripler or frequency quadrupler.
  • the laser output may have a repetition rate greater than 10 KHz.
  • the average laser output power may be in the range of 0.01 W-2 W.
  • the system may further include a viewing system for reading the indicia, including an illuminator and an electronic imaging system.
  • the illuminator may be bright-field.
  • the illuminator may be dark-field.
  • the illuminator may be a combination of bright and dark field.
  • the article includes at least one material having discernible indicia formed on the material during at least one step of manufacturing the article.
  • the indicia are formed by a method of selectively irradiating at least one localized material region with a pulsed laser output.
  • the indicia are at least semi-permanent and useable during a subsequent step of manufacturing the article.
  • a marked region and background material that proximately surrounds the region are both substantially slag-free.
  • the surface roughness is increased within at least a portion of the material region, and thereby reduces reflection of energy used for reading the indicia.
  • the method of selectively irradiating at least one localized material region with a pulsed laser output is the above section entitled “Laser Marking/Texturing Method.”
  • High reflectance contrast may be obtained between the region and the background over a wide range of viewing angles.
  • a background surface may have a strong specular reflection component.
  • Reflectance contrast between the discernible indicia and the background may exceed 30:1 over an angular viewing range of at least 20 degrees.
  • the indicia may include an alphanumeric indicium having font dimension 0.3 mm or finer.
  • the indicia may include a two-dimensional matrix code.
  • the indicia may be useable for one or more manufacturing steps in addition to identification.
  • the indicia may be distinguished from the background with a roughness measurement obtained by at least one of SEM (scanning electron microscope) data, and AFM (atomic force microscope) data.
  • DIN 4768 roughness measurement standards may be utilized to compare the roughness of a portion of the indicia with the background.
  • the indicia may be distinguished from the background with a measurement of image contrast.
  • the indicia may be machine readable.
  • the indicia may appear as a sequence of non-overlapping dots that form a dot matrix code.
  • the indicia may be used in at least one of traceability, component identification, and sorting.
  • Embodiments of the present invention may be used to form indicia on ground, polished, or smooth material surfaces, based on specific application requirements.
  • a surface may be coated.
  • the surface may be either side of a semiconductor wafer, or another material used in a step of fabricating a microelectronic device.
  • an ultrafast laser source 102 of a laser processing system generates a laser output 104 which includes one or more pulses.
  • the laser output 104 propagates through delivery optics 106 that focus the output and deliver the beam into a process chamber 110 , the chamber 110 being used if the laser processing is to be carried out in a gaseous environment.
  • the process chamber 110 may contain a gaseous processing environment at a pressure, partial vacuum, or temperature as is known in the field of laser material interaction to produce microtextured silicon. For processing in ambient, atmospheric conditions the chamber is not required.
  • the focused beam 108 produces a working spot 112 that is incident on the target material, which may be a portion of a silicon semiconductor wafer 114 , and produces marked material 116 (not to scale).
  • the wafer 114 may have a bare (unpatterned) backside 117 , which may be coated, polished, or rough. Fiducials 118 are used for alignment.
  • the topside shown in FIG. 3 may have a large number of die 119 and corresponding dense circuit patterns.
  • An optional secondary laser processing system may be used for further processing.
  • a second laser source 120 to erase, micromachine, weld, or actuate the region of the mark, a second laser source 120 generates a secondary beam 122 .
  • High absorption within the marked region can support such further processing.
  • the actuation may occur as a result of differential thermal expansion of the material and background subsequent to heating the material with the secondary processing beam.
  • the beam 122 propagates through secondary delivery optics 124 that focus the beam.
  • the secondary laser source 120 may be a pulsed, modulated, or CW source, depending on the application.
  • the focused beam 126 produces a secondary working spot 130 that is incident on the wafer 114 and irradiates the marked material 116 .
  • the irradiation may be below the ablation threshold of the marked material to heat the region for actuation or above the threshold to effect material property changes.
  • the two laser systems 100 , 129 having beam paths 104 , 122 may be included in separate systems, or the optical systems may be combined by various well-known methods into a single laser system. There may be two optical axes, one for each beam path, or the beam paths may be combined for a coaxial beam path.
  • a single laser head may produce the beams of the laser sources 102 and 120 , or there may be two laser sources.
  • the secondary laser 120 has a wavelength near or exceeding the absorption edge of silicon.
  • the choice of integrating into a single system may be based on specific design considerations, for example, workpiece dimensions, laser wavelengths and power, optical design considerations, component costs, available factory floor space, X-Y positioning requirements, etc.
  • the delivery systems 106 and 124 corresponding to the texturing system 100 and the secondary processing system 129 , respectively, will often include some elements operated under computer control, as indicated by lines 107 and 127 , respectively. For example, focusing, spot size adjustment, polarization control, and energy control functions may be controlled. Suitable combinations of electro-optic devices, modulators, and opto-mechanical devices for positioning may be utilized. For instance, either delivery system 106 or 124 may include a polarization controller to enhance or control a mark characteristic.
  • the ultrafast laser 102 may produce one or more femtosecond pulses.
  • picosecond lasers may provide many of the benefits of femtosecond lasers but at reduced cost and complexity.
  • Controlled laser-material interaction at the ultrafast scale can be used to control the contrast of the marks over a wide range to meet specific application requirements. Of further significance is the reduction or elimination of debris, slag, cracking, and other undesirable effects generally associated with traditional marking lasers.
  • FIG. 5 illustrates an exemplary “spiky” textured region 135 with the surface height 136 illustrated by a typical spike.
  • the spikes may have a height ranging from a fraction of one micron to tens of microns.
  • the surface profile may be strongly dependent on laser parameters including pulse duration (i.e., width), peak energy, spot diameter, and spot irradiance profile.
  • Embodiments of the present invention can be used to create microtextured regions having lower amplitude (e.g., sub-micron) surface height variations than exemplified in the above paragraph, but with sufficient variations to create high contrast, slag-free marks. Further, enhanced contrast and absence of debris provides for improved mark density when compared to traditional marking approaches.
  • FIGS. 10 and 11 are schematics illustrating, by way of example, a prior art laser mark formed on a specular surface, for instance bare silicon, and a corresponding surface profile showing debris and cracking associated with a deep, “hard” mark.
  • FIGS. 12 and 13 are schematics illustrating, by way of example, a mark formed on the specular surface of FIG. 10 using a system of the present invention.
  • the pulsed laser may be a picosecond laser producing a pulsed output with total energy density (in one or more pulses) sufficient to initiate ablation within a portion of a spot area on the substrate surface.
  • the surface height variations may be tens to hundreds of nanometers, the marked region generally showing significant roughness and eliminating at least strong reflection components.
  • FIGS. 6 and 7 are schematics comparing prior art marks with marks formed in accordance with the present invention, respectively, and illustrate improved density of a dot matrix pattern.
  • FIGS. 8 and 9 are schematics comparing prior art marks with marks formed in accordance with the present invention, respectively, and illustrate improved density of a bar pattern.
  • FIGS. 21 and 22 illustrate the structure of various laser marks produced with traditional and more recent laser marking systems for further comparison with a marked substrate produced in accordance with the present invention.
  • FIGS. 21 and 22 respectively, are side and top schematic views of a mark 250 formed by the assignee of the present invention using a NdYVO4 laser with a pulse width of about 15 ns at 532 nm. The laser system produced shallow marks having a depth of about 1.5-4 microns without substrate cracking.
  • FIG. 22 is a top view of a mark 250 illustrating the presence of ejected material 252 adjacent to the mark 250 .
  • FIG. 21 is a side schematic view of a relatively deep traditional “hard” mark 254 , about 10 microns in depth, wherein cracking of silicon is observed with relatively deep, laser penetration 256 .
  • these textured (marked) areas formed in accordance with the present invention provide high contrast relative to the reflective wafer background surface 115 .
  • the wafer surface 115 may be smooth relative to a visible wavelength, thereby resulting in a strong specular reflection component with negligible diffuse reflection.
  • a textured region may appear opaque, and will preferably have diffuse reflectance corresponding to the darkest shades of “grey scale charts” used for calibrating imaging systems.
  • the diffuse reflectance may be in a range of about 0.5% to 5%, corresponding to about 6 shades of grey.
  • the contrast provides detection for improved-detection, machine-readable marks such as alphanumeric strings, bar codes, matrix codes, etc.
  • Such indicia may be viewed with a mark inspection system 201 , which may be one component of a complete laser processing system as shown in FIG. 14 which, by way of example, includes both the marking laser system 100 , and the secondary laser processing system 129 of FIGS. 1 and 2 , respectively.
  • the system 129 may be used to erase a mark.
  • a system may include only laser marking and an optional mark inspection system 201 without secondary processing.
  • With an ultrafast (or ultra-violet) source shallow marks with highly controllable depths are possible that would be advantageous for marking or coding very thin wafers, for instance, with mark dimensions substantially finer than present commercially available systems.
  • a following section entitled “Marking Examples” and referenced drawing figures show exemplary results using picosecond lasers to produce laser marks on silicon substrates having rough, ground, or smooth surfaces.
  • the readability of the marks is improved over conventional laser marks.
  • the marks appear substantially opaque and the contrast with the background remains high as a function of illumination and viewing angles, for instance, as the relative angle between an illumination source and receiver is varied over 30 degrees. This invariance increase the reliability of machine vision algorithms.
  • Various embodiments of the invention provide for high contrast marks on wafers and marks on other microelectronic articles or devices made from silicon. Further application is expected to MEMS and MOEMS devices and for providing marks or other patterns on materials such as Ti and steel.
  • the marking may be used primarily for identification, or it may be used to change the material's optical properties at discrete sites for functional or subsequent process reasons.
  • wafers to be processed are removed from a wafer carrier by a robotic wafer handling system 205 , as illustrated schematically in FIGS. 14 and 15 .
  • Orientation of the wafer is determined by optical alignment, including operation of a pre-aligner 206 and any other required steps, for instance identifying the wafer type with a reader 207 .
  • the laser 102 generates a processing beam.
  • the beam positioning system 106 delivers and focuses the ultrafast processing beam onto a workpiece, which may be a silicon substrate. Interaction of the focused processing beam with the material of the workpiece in an atmosphere or ambient environment creates microtexture on the surface of the workpiece.
  • Laser pulses 104 (i.e., FIG. 1 ) generated by the ultra-short pulse laser 102 propagate along the optical path 104 , and are deflected or otherwise positioned with a beam positioner 220 ( FIG. 16 ).
  • the beam positioning will typically be carried out using two galvanometer scan mirrors which generally provide for deflection over a wide angle with a scan lens used to focus the output onto the wafer 114 which is typically mounted on an X-Y stage 208 .
  • Each laser pulse (or pulse sequence) forms a microtextured spot of material on the wafer 114 .
  • the positioning of the beam is determined by a controller so that a sequence of laser pulses forms characters or other indicia on the wafer 114 .
  • the wafer 114 is removed from the processing area and reloaded into its wafer carrier.
  • a secondary processing step may occur with the system 129 before the wafer 114 is transferred.
  • Relative controlled movement of the workpiece and the focused processing beam selectively creates microtexture that forms discernible patterns on the workpiece.
  • top-hat irradiance profile spots can provide indicia with more uniform microtexturing and reduced melting at the ablation threshold transition zone.
  • the area of the spot at or above the ablation threshold can be increased without an increase in the pulse energy, thereby efficient microtexturing is achieved. It may be desirable to use a spot with a depressed center and energy concentrated in the perimeter to further limit melting and increase sharpness of the microtexture substrate transition at the kerf edge.
  • Round spots provide consistent exposure for line elements in any orientation. However, square and rectangular spots can further increase efficiency and uniformity by delivering a uniform dose across an aligned kerf width and to larger areas requiring filling.
  • Control of the aspect of a spot can be used to precisely control the irradiance and spot overlap. For example, maximum pulse energy may be selected and spot length along a trajectory may be expanded or contracted to modify the shape of the area exposed at or above the ablation threshold.
  • the spot may be expanded to expose a larger area at or above the ablation threshold without increasing the kerf width or can allow the kerf width to be reduced without increasing irradiance.
  • the spot may be expanded to allow expose of at least a portion of the spot to an increased number of laser pulses.
  • compression of the spot along the kerf may be used to increase the exposure to or above the ablation threshold without decreasing the kerf width or can allow the kerf width to be increased without decreasing irradiance. Compression of the spot may also be used to allow exposure of at least a portion of the spot to a decreased number of pulses.
  • the laser may be an ultrafast laser.
  • the ultrafast laser may have a wavelength below the absorption edge of the substrate, for example 532 nm for silicon processing.
  • the average power, which relates to the required threshold fluence and repetition rate may be in the approximate range of 0.01 W-2 W for marking silicon wafers using various embodiments of the present invention.
  • the pulse width (duration) may be less than 1 ns.
  • the laser pulse width will be in the range of about 100 fs to about 50 ps, and most preferably in the range of about 300 fs to 10 ps.
  • Certain embodiments may use a diode-pumped, solid-state UV laser with a pulse width less than about 20 ns, and preferably less than 1 ns. Formation of the desired microtexture may utilize gas-assist or a gaseous environment in the chamber 110 , as shown in FIG. 1 , for best results with UV processing.
  • FIGS. 16-19 show additional details of an exemplary laser processing system which may be used for laser marking of substrates, for instance marking of silicon wafers (front and/or backside).
  • a positioning subsystem may include one or more translation stages 208 for moving the workpiece relative to the processing beam 108 along at least two axes. Numerous combinations of relative substrate and beam positioning devices are known to those skilled in the art of laser material processing, for instance, semiconductor processing, stereolithography, semiconductor laser repair, laser drilling, or semiconductor wafer trimming.
  • FIGS. 7 and 9 are typically tens of microns in commercially available marking systems.
  • a laser marking system of the present invention may be used to produce significantly smaller feature sizes, for instance 5-10 micron dots.
  • the features in FIGS. 7 and 9 may be characterized by a minimum resolvable distance between features of the pattern. The minimum resolvable distance may be on the order of a wavelength of the pulsed laser output, for instance 0.25 microns.
  • the positioning system may include fine and coarse positioners to match or exceed the pattern resolution and provide for ultra-fine patterning.
  • the fine stage may have a travel range on the order of millimeters positioning accuracy substantially finer than 1 micron, for instance 0.05 microns.
  • the system may also include other auxiliary fine positioners, for instance precision, small-angle, beam deflectors (e.g., an acousto-optic deflector), together with closed loop control.
  • auxiliary fine positioners for instance precision, small-angle, beam deflectors (e.g., an acousto-optic deflector), together with closed loop control.
  • Such positioning systems may be used in embodiments of the present invention for laser marking, patterning, joining, or other applications.
  • embodiments of the invention for practicing laser marking and other applications with laser systems 100 , 129 may include irradiating first and second sides of the workpiece.
  • wafer chuck 249 may be mounted to an X-Y stage in a configuration suitable for laser systems 100 , 129 to irradiate opposite sides of the workpiece surface.
  • the wafer chuck 249 may include a Z-axis translator and capability for tilting the workpiece (rotation about the x-y axes). Such precision translation and rotation stages have been applied in lithography, laser trimming, and similar applications.
  • either or both beam positioning systems 220 , 220 ′ may include a two-axis, galvanometer-based, beam scanner 240 , 242 to move the beam relative to the workpiece.
  • Either beam positioning system 220 , 220 ′ may include a combination of two or more stages and scanners to move the processing beam relative to the workpiece in at least two axes.
  • components to position the beam waist relative to the workpiece through movement 246 of one or more optical elements within the secondary laser system may be included.
  • components may be included to move the beam waist relative to the workpiece in at least 3 axes using various combinations of movement 246 of optical system components with z-axis translation 246 ′ using, for example, a motorized wafer chuck assembly.
  • Precision galvanometric scanning heads 240 , 242 are available from GSI Lumonics Corporation (assignee of the present invention), Cambridge Technologies and Scan Labs LTD. Exemplary options for an associated optical system are illustrated in FIGS. 18 and 19 include: (1) a telecentric lens or f-theta corrected lens 221 with programmable spot size adjustment 222 ; and (2) a widefield post-objective system 223 and motorized dynamic focus adjustment 224 (not shown in FIG. 16 ).
  • the focusing subsystem 106 in the ultrafast system is illustrated as a refractive optical system.
  • an all reflective system may provide for improved performance as a result of dispersion compensation.
  • an ultrashort pulse may have a wavelength spread of about 8 nm or more about the central wavelength.
  • Femtooptics, Inc. is a supplier of femtosecond optical components.
  • Extremely high absorption microtextures may be produced in a non-ambient atmosphere, with processing carried out in a processing chamber.
  • the processing atmosphere may containing gases or may be a vacuum to assist the formation of microstructures.
  • microstructures are formed in a open atmosphere of gases, and it is most preferred that the workpiece is placed in ambient air.
  • the microtexture created reduces reflected energy off the surface of the workpiece.
  • the microtexture created is spike or cone-like structures, on the order of or smaller than the wavelength of light, the surface profiles of which are illustrated in FIG. 5 as an exemplary regular arrangement and FIGS. 12 and 13 as a microtextured region with reduced height variation (peak amplitude) and regularity.
  • Very highly absorbing structures have been made in process chambers.
  • moderately absorbing structures e.g., FIGS. 12 and 13
  • FIGS. 12 and 13 are considered for various embodiments of the present invention, thereby reducing the system requirements needed to create the microtextured regions.
  • the patterns formed may be alpha-numeric characters.
  • the patterns formed may be logotypes.
  • the patterns formed may be machine-readable.
  • the patterns may be also be human-readable.
  • a font size of finer than 0.3 mm is achievable using one or more embodiments of the present invention.
  • the system may include an integral mark inspection system 201 (i.e., FIG. 14 ) to identify the patterns, or the inspection may be included in a separate system or station of a manufacturing process.
  • an integral mark inspection system 201 i.e., FIG. 14
  • machine vision technology for instance pattern recognition systems supplied by Cognex, Inc. may be used for mark identification.
  • pattern recognition systems supplied by Cognex, Inc.
  • laser-based microtexturing has produced high contrast marks, relatively insensitive to illumination conditions, including camera angle and lighting angle over a wide range.
  • the inspection vision system 201 may be implemented (or replaced) with an optional “though the lens” vision system configuration integrated within a galvanometer system, for instance designs corresponding to FIGS. 18 and 19 .
  • the substrate material may be a metal, a silicon wafer (bare or with various coatings).
  • Other exemplary materials include inorganic or organic dielectrics (including low-k materials, metallization, refractory metals, and plastics).
  • the material to be marked may be part of a multimaterial device, which may include a layer of silicon dioxide on silicon, for instance.
  • the material may be an inorganic or organic dielectric, for instance a passivation layer.
  • the marked areas may be permanent, semi-permanent, or erasable so as to be utilized in the process of making the multimaterial device, for instance, to control or select various fabrication steps.
  • Exemplary devices include a multimaterial semiconductor memory, damascene structure, processors, peripheral chips, etc., RFID tags, MCMs, and the like.
  • an ultra-short pulse laser source is to be included within a commercially soft-mark type of wafer marking system such as the GSI Lumonics WaferMark SigmaClean. Details regarding various laser system alternatives are included in a later section.
  • the soft marks normally created in the wafer marking system are replaced with shallow, low-reflectance, angle-insensitive marks.
  • Integration of the ultra-short pulse laser source requires mechanical and optical changes to couple the laser energy into an optical path of the machine, propagate the beam along the optical path and focus the beam onto the substrate. The integration may be carried out by design practices well-known to those skilled in the art of designing laser beam processing systems.
  • a highly absorbing marked area may be irradiated for subsequent processing according to various methods of this invention.
  • the secondary irradiation may use lasers that are more weakly absorbed in the substrate, for instance lasers that operate near or beyond the absorption edge of silicon.
  • lasers that are more weakly absorbed in the substrate
  • Various studies have shown increased absorptance within the microtextured regions both in the visible and the NIR. Near and beyond the absorption edge of silicon, high power processing lasers can be used with minimal damage to the normally transmitting substrate.
  • the first ultrafast step may produce fine patterning that is processed with a coarse secondary beam, and conversely, the first step may produce a coarse mark that is finely patterned with the secondary step.
  • the absorbing material may be ablated in a micromachining step with controlled depth.
  • this ablation may be for the purpose of removing or erasing 410 the mark, creating a negative “window” mark on an absorbing field, or it may be to micromachine a fine pattern, or trim an electrical or mechanical parameter.
  • FIG. 24 shows a microtextured area that is modified at 420 with secondary irradiation 126 .
  • the operations to produce the microtextured region may be carried out within a system as illustrated in FIG. 14 , or at a different location in the manufacturing process.
  • FIGS. 2 and 20 illustrate several components which may be used in a secondary processing system and these system components may be similar or identical to those used in the ultrafast system.
  • the laser 120 generates the secondary processing beam.
  • a beam positioning system which may correspond to any suitable arrangement of optical or mechanical beam positioners, delivers and focuses the secondary processing beam 126 onto a microtextured area of a workpiece.
  • the secondary laser energy is absorbed by the microtexture.
  • the microtexture is heated and the increased temperature is sufficient to cause a phase change in the material.
  • the secondary processing laser 120 may be a YAG or CO2 laser.
  • the laser 120 is selected to minimize damage to non-microtextured areas.
  • the laser beam 126 is transmitted through the non-microtextured material.
  • the preferred wavelength may be about 1.2 microns (e.g., using a Raman laser) where the silicon transmission is generally maximized.
  • a commercially available 1.32 micron laser may also be nearly optimum, and such lasers are widely available.
  • the beam positioning system may include one or more stages 208 for moving the workpiece relative to the processing beam, in an arrangement similar or identical to FIG. 20 .
  • the beam positioning system may include a beam scanner 240 , 242 to move the beam relative to the workpiece and a focusing lens.
  • the specific choice of components and other features will generally depend on the laser wavelength, spot size requirements, damage threshold considerations, etc.
  • the beam positioning system may include a combination of two or more stages and scanners to move the processing beam relative to the workpiece in at least two axes.
  • the beam positioner may position the beam waist relative to the workpiece through movement 246 of one or more optical elements within the secondary laser system.
  • the beam positioning system may move the beam waist relative to the workpiece in at least three axes.
  • the beam positioning system may move the beam waist relative to the workpiece in at least three axes using various combinations of movement of optical system components with z-axis translation 246 ′ using, for example, a motorized wafer chuck assembly.
  • the microtextured area may be formed according to an embodiment of the current invention, but is not restricted to ultrashort laser processing. Generally, the microtextured area is to decrease the reflection coefficient of the workpiece material.
  • the irradiated material may be ablated from the surface to remove the absorbing structure.
  • the irradiated material may be melted and recast to form an area with modified properties.
  • the secondary beam may have a wavelength which corresponds to maximum transmission through the non-textured material.
  • the non-textured region is also silicon
  • the secondary beam may have a wavelength beyond the absorption edge of silicon, for instance greater than 1.2 microns.
  • the wavelength may be in the visible or near IR region. In some applications it may be desirable to use a laser that is absorbed in the microtexture and the adjacent material
  • FIGS. 25 to 36 relates to actual results obtained using a commercially available picosecond laser to form marks on silicon substrates having ground, polished, or smooth surfaces.
  • Laser and system parameters for some marked regions are as follows:
  • the samples were mounted on X-Y stage, and the mark linewidth was varied by adjustment of a combination of the optical system and incident laser energy, the adjustments controlling the energy density incident on the material.
  • the images of the marked material samples were taken using a “through the lens” (brightfield) microscope system and CCD camera. Various regions were profiled using either a SEM (scanning electron microscope) or AFM (atomic force microscope). Certain marks were also compared with marks formed using a nanosecond laser system.
  • the number of pulses corresponding to a particular linewidth can be computed from the pulse repetition rate, linewidth, and table speed. For instance, FIG. 25 corresponds to 34 applied pulses during stage travel corresponding to the linewidth of 115 ⁇ m.
  • the listed laser parameters and results are to be regarded as exemplary rather than limiting.
  • the laser parameters may be optimized or adjusted based on various process conditions, surface roughness figures, presence/absence of coatings, etc. Various refinements and adjustments may provide for further improvements in contrast and density.
  • the linewidth corresponds to an effective spot size on the surface wherein the fluence is at or above an approximate ablation threshold of silicon. Hence, if a greater fraction of the spot is above the ablation threshold the linewidth increases. For example, if the spot profile is diffraction limited and Gaussian and the region above threshold corresponds to the FWHM, then the nominal kerf width will be approximately the FWHM.
  • the laser used in the experiments and general laser system specifications are as follows:
  • FIGS. 25, 26 and 27 show marks formed on a ground silicon substrate, exemplified by the grind direction (as opposed to uniform, specular background).
  • FIGS. 26 and 27 provide a rough test of the “process energy window” which represent the energy range over which acceptable processing is achieved.
  • the larger linewidth (140 microns) in FIG. 26 corresponds to a larger fraction of the focused spot diameter above the ablation threshold.
  • a slight heat-affected zone (HAZ) is shown in the regions where melting occurs, though insignificant. Undesirable slag, debris, or severely melted zones are absent.
  • FIGS. 28 and 29 show parameters and results where a 40 micron linewidth was produced in the X and Y directions, respectively.
  • the polarization was perpendicular to the direction of travel.
  • FIGS. 30 a , 30 b , 31 a , 31 b , 32 a , 32 b and 32 c illustrate improved mark density and a clearly resolved pattern within a 0.3 mm (0.28 mm) region, a result which demonstrates capability to form finer indicia than available in current, commercially-available, laser marking systems.
  • FIGS. 30 a and 30 b correspond to a specular wafer background (smooth finish)
  • FIGS. 31 a and 31 b correspond to a rough back-side wafer surface
  • FIGS. 32 a , 32 b and 32 c correspond to a polished wafer.
  • the enlarged photos provide some local additional detail, the definition and sharpness reduction believed to be caused by various limitations in the setup, for instance the camera dynamic range, the high N.A. of the microscope collecting additional scattered light, and other factors.
  • the high contrast images correspond to the approximate magnification to be used by a typical mark reader/inspection system.
  • FIGS. 33 a and 33 b compare a high contrast mark obtained with the picosecond system (i.e., FIG. 33 a ) with a mark formed with a typical nanosecond laser-based marking system (i.e., FIG. 33 b ).
  • the nanosecond “dark” mark surface roughness is not significantly altered, whereas the microtexture is formed only within the picosecond mark.
  • FIGS. 34 a , 34 b and 34 c show SEM images of the marked regions further demonstrating the presence of the microtexture produced with the picosecond system as follows:
  • the nanosecond results show only insignificant roughness (“dark mark” case), the surface roughness variations evident with the picosecond results were not detected in the nanosecond data—neither the “dark” or “hard” marks show the microtexture.
  • the deep marks traditional “hard marks” also show highly undesirable ridge formations. Of significance is an observation that even for “dark” nanosecond marks (which are relatively shallow compared to “hard marks”), the microtexture is not detected in the images corresponding to the nanosecond marking.
  • FIG. 35 shows SEM images obtained from a marked region of a polished wafer.
  • a surface region is shown at three SEM magnifications: 15,000 ⁇ , 6,000 ⁇ , and 25,000 ⁇ .
  • the texture boundary between the marked and unmarked region is evident, even with the polished background variations.
  • the marked region, its periphery, and the polished background are all slag-free—ridges and kerf height negligible.
  • FIGS. 36, 37 a , 37 b , 37 c and 37 d show measurement of a marked region of a polished wafer using an AFM to measure surface heights. Sub-micron structures are evident, with peak heights in the range of tens to hundreds of nanometers.
  • the polished background regions correspond to the semi-specular, strong directional reflectance results shown in earlier figures. A very high contrast is achievable for specular wafer backgrounds providing for clear recognition of textured and non-marked specular wafer regions. In such a case, the indicia may also be clearly distinguished from the background using AFM or SEM measurements which will exemplify the difference in texture.
  • the examples generally show marked regions which have roughness greater than a reflective background.
  • This example may be of interest if, for example, the system throughput is not degraded (or is improved) using the technique (e.g., wherein the total area of the indicia is to be greater than the background area).
  • certain applications may require such “reverse contrast” as part of customer specifications.
  • Other similar variations and alternatives can be carried out without departing from the scope and spirit of the present invention.
  • the commercially available laser used to produce the high contrast results of the above working example includes a mode locked oscillator and a diode pumped solid-state laser amplifier. Picosecond outputs are available with pulse parameters within a desired range.
  • the choice of a laser system is generally based upon the requirements for pulse energy, repetition rate, average power, pulse width required to irradiate the material to be marked with total energy density sufficient to initiate ablation within the spatial spot size on the material surface.
  • Useful laser wavelengths include near IR, visible (e.g., 532 nm), and ultraviolet. Other factors include size, cost, reliability, and various practical considerations for use in semiconductor production environment, for example.
  • An “off-the-shelf” solution is desirable when available.
  • the laser system is compatible with available marking equipment, for instance the commercially soft-mark type of wafer marking system such as the GSI Lumonics WaferMark SigmaClean.
  • the laser systems of the above-noted incorporated patent applications may be modified for use at shifted wavelengths (e.g., green and UV).
  • the system output for instance average power and peak energy, may be adjusted to meet the energy density requirements with reduction or increase or amplifier gain as needed to process at a required energy density.
  • FCPA system Fiber based Chirped Pulse Amplification
  • FCPA system Fiber based Chirped Pulse Amplification
  • IMRA America includes 2 microjoules of pulse energy at a repetition rate of 500 KHz, corresponding to 1 W average power operation at femtosecond pulse widths.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
US11/152,509 2004-06-30 2005-06-14 Laser-based method and system for processing targeted surface material and article produced thereby Abandoned US20060000814A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US11/152,509 US20060000814A1 (en) 2004-06-30 2005-06-14 Laser-based method and system for processing targeted surface material and article produced thereby
KR1020077002121A KR101278433B1 (ko) 2004-06-30 2005-06-21 목표 표면재를 가공하기 위한 레이저 기반의 방법 및시스템 그리고 그에 따라 생산된 물품
EP05773635A EP1779286B1 (en) 2004-06-30 2005-06-21 Laser-based method and system for processing targeted surface material and article produced thereby
PCT/US2005/021955 WO2006012124A2 (en) 2004-06-30 2005-06-21 Laser-based method and system for processing targeted surface material and article produced thereby
AT05773635T ATE550132T1 (de) 2004-06-30 2005-06-21 Laserbasiertes verfahren und system zur verarbeitung von gezielt ausgerichtetem oberflächenmaterial und daraus hergestellter artikel
JP2007519283A JP2008504964A (ja) 2004-06-30 2005-06-21 ターゲット表面材料を加工するレーザベース方法およびシステム並びにその製造物
US11/514,660 US7469831B2 (en) 2004-06-30 2006-10-27 Laser-based method and system for processing targeted surface material and article produced thereby
US11/801,706 US20080073438A1 (en) 2004-06-30 2007-05-10 Laser-based method and system for processing targeted surface material and article produced thereby

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58426804P 2004-06-30 2004-06-30
US11/152,509 US20060000814A1 (en) 2004-06-30 2005-06-14 Laser-based method and system for processing targeted surface material and article produced thereby

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/514,660 Division US7469831B2 (en) 2004-06-30 2006-10-27 Laser-based method and system for processing targeted surface material and article produced thereby

Publications (1)

Publication Number Publication Date
US20060000814A1 true US20060000814A1 (en) 2006-01-05

Family

ID=35512828

Family Applications (3)

Application Number Title Priority Date Filing Date
US11/152,509 Abandoned US20060000814A1 (en) 2004-06-30 2005-06-14 Laser-based method and system for processing targeted surface material and article produced thereby
US11/514,660 Active US7469831B2 (en) 2004-06-30 2006-10-27 Laser-based method and system for processing targeted surface material and article produced thereby
US11/801,706 Abandoned US20080073438A1 (en) 2004-06-30 2007-05-10 Laser-based method and system for processing targeted surface material and article produced thereby

Family Applications After (2)

Application Number Title Priority Date Filing Date
US11/514,660 Active US7469831B2 (en) 2004-06-30 2006-10-27 Laser-based method and system for processing targeted surface material and article produced thereby
US11/801,706 Abandoned US20080073438A1 (en) 2004-06-30 2007-05-10 Laser-based method and system for processing targeted surface material and article produced thereby

Country Status (6)

Country Link
US (3) US20060000814A1 (ko)
EP (1) EP1779286B1 (ko)
JP (1) JP2008504964A (ko)
KR (1) KR101278433B1 (ko)
AT (1) ATE550132T1 (ko)
WO (1) WO2006012124A2 (ko)

Cited By (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040144760A1 (en) * 2002-05-17 2004-07-29 Cahill Steven P. Method and system for marking a workpiece such as a semiconductor wafer and laser marker for use therein
US20060256181A1 (en) * 2005-05-11 2006-11-16 Ehrmann Jonathan S Optical scanning method and system and method for correcting optical aberrations introduced into the system by a beam deflector
US20070095802A1 (en) * 2005-11-03 2007-05-03 Hon Hai Precision Industry Co., Ltd. Laser treatment apparatus
US20070117227A1 (en) * 2005-11-23 2007-05-24 Gsi Group Corporation Method And System for Iteratively, Selectively Tuning A Parameter Of A Doped Workpiece Using A Pulsed Laser
US20070178714A1 (en) * 2002-03-27 2007-08-02 Bo Gu Method and system for high-speed precise laser trimming and scan lens for use therein
WO2007116124A1 (en) * 2006-04-12 2007-10-18 Picodeon Ltd Oy Method for adjusting ablation threshold
DE102006019118A1 (de) * 2006-04-25 2007-10-31 Epcos Ag Element mit optischer Markierung, Verfahren zur Herstellung und Verwendung
US20070272555A1 (en) * 2006-05-24 2007-11-29 Baird Brian W Laser processing of workpieces containing low-k dielectric material
US20080000887A1 (en) * 2006-06-28 2008-01-03 Seagate Technology Llc Method of laser honing
US20080067155A1 (en) * 2006-09-15 2008-03-20 Bo Gu Method and system for laser processing targets of different types on a workpiece
FR2906646A1 (fr) * 2006-10-03 2008-04-04 Microcomposants De Haute Secur Procede de marquage individuel de circuits integres et circuit integre marque selon ce procede.
US20080176398A1 (en) * 2007-01-18 2008-07-24 Kanti Jain High throughput, low cost dual-mode patterning method for large area substrates
US20080192618A1 (en) * 2007-02-09 2008-08-14 Yoshiko Nakata Laser rewriting system
US20080216926A1 (en) * 2006-09-29 2008-09-11 Chunlei Guo Ultra-short duration laser methods for the nanostructuring of materials
US20080299408A1 (en) * 2006-09-29 2008-12-04 University Of Rochester Femtosecond Laser Pulse Surface Structuring Methods and Materials Resulting Therefrom
US20080308728A1 (en) * 2005-08-16 2008-12-18 Imago Scientific Instruments Corporation Atom Probes, Atom Probe Specimens, and Associated Methods
US20100012631A1 (en) * 2005-09-08 2010-01-21 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US20100025387A1 (en) * 2005-09-08 2010-02-04 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US7666759B2 (en) 2002-03-27 2010-02-23 Gsi Lumonics Corporation Method and system for high-speed, precise micromachining an array of devices
US7705268B2 (en) 2004-11-11 2010-04-27 Gsi Group Corporation Method and system for laser soft marking
US20100143744A1 (en) * 2007-03-09 2010-06-10 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing of Material Surfaces and their Applications
US20100219506A1 (en) * 2005-12-21 2010-09-02 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing and Crystallization of Material Surfaces
CN101862900A (zh) * 2010-05-28 2010-10-20 北京数码大方科技有限公司 焊接方法及焊接设备
US20100276404A1 (en) * 2009-04-30 2010-11-04 Mitsuboshi Diamond Industrial Co., Ltd. Laser machining method and laser machining apparatus
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US20110185971A1 (en) * 2009-11-30 2011-08-04 Uvtech Systems, Inc. Laser doping
US20110208304A1 (en) * 2006-06-07 2011-08-25 Medicinelodge, Inc. Dba Imds Co-Innovation Laser Based Metal Deposition LBMD of Antimicrobials to Implant Surfaces
CN102545017A (zh) * 2010-12-14 2012-07-04 澳门科技大学 一种用于芘荧光光谱检测的拉曼激光源的实现方法和装置
CN102958640A (zh) * 2011-03-10 2013-03-06 伊雷克托科学工业股份有限公司 用于可靠地镭射标记物品的方法和装置
CN102971109A (zh) * 2010-06-25 2013-03-13 伊雷克托科学工业股份有限公司 用于可靠地镭射标记物品的方法及设备
US8405885B2 (en) 2007-01-23 2013-03-26 Imra America, Inc. Ultrashort laser micro-texture printing
WO2013059779A1 (en) * 2011-10-21 2013-04-25 American Laser Enterprises, Llc System configured for removing a coating from a substrate using electromagnetic radiation
CN103228399A (zh) * 2011-03-10 2013-07-31 伊雷克托科学工业股份有限公司 用于可靠地镭射标记物品的方法和装置
WO2014009200A3 (de) * 2012-07-10 2014-04-17 Rofin-Baasel Lasertech Gmbh & Co. Kg Verfahren zum markieren von bauteilen eines triebwerkes für ein flugzeug
WO2014066251A1 (en) * 2012-10-22 2014-05-01 Electro Scientific Industries, Inc. Method and apparatus for marking an article
TWI452605B (zh) * 2006-01-30 2014-09-11 Gsi Group Corp 高速精準雷射修整之方法與系統，以及用於其內之掃描透鏡
US8846551B2 (en) 2005-12-21 2014-09-30 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
US20150016826A1 (en) * 2013-07-11 2015-01-15 Technion Research & Development Foundation Limited Method and system for transmitting light
US8942071B2 (en) 2011-02-04 2015-01-27 Lucinda Price Color storage and transmission systems and methods
CN104884205A (zh) * 2012-12-20 2015-09-02 伊雷克托科学工业股份有限公司 经由激光微加工形成影像的方法
TWI511821B (zh) * 2012-12-14 2015-12-11 Kataoka Corp Laser processing machine
US9375946B2 (en) 2010-02-11 2016-06-28 Electro Scientific Industries, Inc. Method and apparatus for reliably laser marking articles
US9383732B2 (en) 2006-06-05 2016-07-05 Electro Scientific Industries, Inc. Method and system for adaptively controlling a laser-based material processing process and method and system for qualifying same
CN105904095A (zh) * 2016-06-23 2016-08-31 济南邦德激光股份有限公司 一种打标机
US20160276047A1 (en) * 2015-03-16 2016-09-22 Ricoh Company, Ltd. Protection barrier and laser irradiation system
US20160358057A1 (en) * 2014-08-11 2016-12-08 Brian Kieser Structurally encoded component and method of manufacturing structurally encoded component
TWI583478B (zh) * 2011-03-21 2017-05-21 伊雷克托科學工業股份有限公司 經過陽極氧化之鋁質物品
US20170341183A1 (en) * 2014-12-12 2017-11-30 Velo3D, Inc. Control Systems for Three-Dimensional Printing
EP3165615A4 (en) * 2014-07-03 2018-01-24 Nippon Steel & Sumitomo Metal Corporation Laser machining device
TWI640384B (zh) * 2011-03-21 2018-11-11 美商伊雷克托科學工業股份有限公司 在物品上建立標記的方法、雷射標記裝置、具有標記的物品、具有標記的經陽極氧化的物品及經陽極氧化的物品
US10131086B2 (en) 2011-06-30 2018-11-20 University Of Virginia Patent Foundation Micro-structure and nano-structure replication methods and article of manufacture
WO2018213366A1 (en) * 2017-05-17 2018-11-22 General Electric Company Surface treatment of turbomachinery
US10876193B2 (en) 2006-09-29 2020-12-29 University Of Rochester Nanostructured materials, methods, and applications
US10888925B2 (en) 2017-03-02 2021-01-12 Velo3D, Inc. Three-dimensional printing of three-dimensional objects
US20210035767A1 (en) * 2019-07-29 2021-02-04 Applied Materials, Inc. Methods for repairing a recess of a chamber component
CN113263027A (zh) * 2021-05-26 2021-08-17 金顿激光科技(佛山)有限公司 一种基于激光清洗参数优化的激光控制方法及系统
AU2016264737B2 (en) * 2015-05-20 2021-09-09 Quantum-Si Incorporated Pulsed laser and bioanalytic system
US20210285084A1 (en) * 2020-03-10 2021-09-16 Jvis-Usa, Llc Laser-Based Method and System for Marking a Workpiece
US11249318B2 (en) 2016-12-16 2022-02-15 Quantum-Si Incorporated Compact beam shaping and steering assembly
US11322906B2 (en) 2016-12-16 2022-05-03 Quantum-Si Incorporated Compact mode-locked laser module
AT524312A4 (de) * 2020-12-22 2022-05-15 Hofall Holding 1 Gmbh Verfahren zur Herstellung eines oberflächenmodifizierten Metallimplantats
US11384003B2 (en) * 2016-01-11 2022-07-12 Zwiesel Kristallglas Ag Laser filamentation
TWI775106B (zh) * 2019-08-07 2022-08-21 日商Ｓｕｍｃｏ股份有限公司 雷射標記的印刷方法及具有雷射標記的矽晶圓的製造方法
FR3121060A1 (fr) * 2021-03-29 2022-09-30 Qiova Procédé et dispositif pour former une figure sur ou dans une pièce
US11466316B2 (en) * 2015-05-20 2022-10-11 Quantum-Si Incorporated Pulsed laser and bioanalytic system
EP4116030A1 (en) * 2021-07-09 2023-01-11 Aix-Marseille Université Method for optical writing in a semiconductor material, corresponding computer program product, storing medium and writing device
US11567006B2 (en) 2015-05-20 2023-01-31 Quantum-Si Incorporated Optical sources for fluorescent lifetime analysis
US11691343B2 (en) 2016-06-29 2023-07-04 Velo3D, Inc. Three-dimensional printing and three-dimensional printers
US11747561B2 (en) 2019-06-14 2023-09-05 Quantum-Si Incorporated Sliced grating coupler with increased beam alignment sensitivity
US11808700B2 (en) 2018-06-15 2023-11-07 Quantum-Si Incorporated Data acquisition control for advanced analytic instruments having pulsed optical sources
WO2024006968A3 (en) * 2022-06-30 2024-03-14 University Of Virginia Patent Foundation Microtexturized substrates and methods for producing the same
US11999110B2 (en) 2019-07-26 2024-06-04 Velo3D, Inc. Quality assurance in formation of three-dimensional objects
US12029653B1 (en) 2023-06-14 2024-07-09 Spine Wave, Inc. Medical implant having a textured tissue contact surface

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8653409B1 (en) * 2004-06-23 2014-02-18 Board Of Governors For Higher Education, State Of Rhode Island And Providence Plantations Selective surface smoothing using lasers
GB0509727D0 (en) * 2005-05-13 2005-06-22 Renishaw Plc Method and apparatus for scale manufacture
US7655003B2 (en) 2005-06-22 2010-02-02 Smith & Nephew, Inc. Electrosurgical power control
US20070125863A1 (en) * 2005-12-05 2007-06-07 Jakoboski Timothy A System and method for employing infrared illumination for machine vision
KR101511199B1 (ko) * 2006-08-22 2015-04-10 캠브리지 테크놀로지 인코포레이티드 엑스-와이 고속 천공 시스템에서 공진 스캐너를 사용하기 위한 시스템 및 방법
US7893385B2 (en) * 2007-03-01 2011-02-22 James Neil Rodgers Method for enhancing gain and range of an RFID antenna
US20100108641A1 (en) * 2008-10-03 2010-05-06 Applied Materials, Inc. Lavacoat pre-clean and pre-heat
US20100119808A1 (en) * 2008-11-10 2010-05-13 Xinghua Li Method of making subsurface marks in glass
US8552336B2 (en) * 2008-12-23 2013-10-08 Triune Ip Llc Micro matrix data marking
US8187983B2 (en) 2009-04-16 2012-05-29 Micron Technology, Inc. Methods for fabricating semiconductor components using thinning and back side laser processing
TWI594828B (zh) 2009-05-28 2017-08-11 伊雷克托科學工業股份有限公司 應用於雷射處理工件中的特徵的聲光偏轉器及相關雷射處理方法
DE102009039417B4 (de) * 2009-08-31 2015-09-24 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG UV-Strahlungsüberwachung in der Halbleiterverarbeitung unter Anwendung eines temperaturabhänigen Signals
US8796584B2 (en) * 2009-12-22 2014-08-05 Aktiebolaget Skf Method of manufacturing a bearing component with visually undetectable mark; bearing component with such marking; method of authentification such marking
JP5424863B2 (ja) * 2009-12-26 2014-02-26 京セラ株式会社 ドリルの識別記号付与方法
US8263899B2 (en) * 2010-07-01 2012-09-11 Sunpower Corporation High throughput solar cell ablation system
US8604380B2 (en) * 2010-08-19 2013-12-10 Electro Scientific Industries, Inc. Method and apparatus for optimally laser marking articles
US9023461B2 (en) * 2010-10-21 2015-05-05 Electro Scientific Industries, Inc. Apparatus for optically laser marking articles
KR101973660B1 (ko) * 2010-10-22 2019-04-30 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 빔 디더링 및 스카이빙을 위한 레이저 처리 시스템 및 방법
FR2974746B1 (fr) * 2011-05-02 2014-07-18 Snecma Procede de nettoyage et de decapage d'une aube de turbomoteur au moyen d'un laser impulsionnel
JP5879806B2 (ja) * 2011-08-09 2016-03-08 富士電機株式会社 Ｎｔｄ半導体基板へのレーザー印字方法
KR20130039955A (ko) 2011-10-13 2013-04-23 현대자동차주식회사 용접용 레이저 장치
KR101327889B1 (ko) * 2011-12-01 2013-11-11 서울대학교산학협력단 금속성 미세구조물 및 그의 가공 방법
FR2998505B1 (fr) * 2012-11-26 2015-02-06 Akeo Plus Procede et systeme de marquage d’une surface par traitement laser
CN105103390B (zh) * 2013-03-15 2021-02-12 伊雷克托科学工业股份有限公司 用于激光射束定位系统的相位阵列操纵
FR3010924B1 (fr) 2013-09-20 2015-11-06 Essilor Int Dispositif et procede de marquage laser d'une lentille ophtalmique
DE102014200742B4 (de) 2014-01-16 2021-09-30 Friedrich-Schiller-Universität Jena Verfahren zum Entspiegeln eines optischen Elements, optisches Element und Terahertz-System
DE102016201088A1 (de) * 2016-01-26 2017-07-27 Dr. Johannes Heidenhain Gmbh Verfahren zum Bearbeiten einer Maßverkörperung
KR20190025721A (ko) * 2016-07-28 2019-03-11 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 작업물을 레이저 가공하는 레이저 가공 장치 및 방법
JP6781650B2 (ja) * 2017-03-13 2020-11-04 株式会社ディスコ レーザー加工装置
JP6781649B2 (ja) * 2017-03-13 2020-11-04 株式会社ディスコ レーザー加工装置
JP6802093B2 (ja) * 2017-03-13 2020-12-16 株式会社ディスコ レーザー加工方法およびレーザー加工装置
JP6802094B2 (ja) * 2017-03-13 2020-12-16 株式会社ディスコ レーザー加工装置
EP3416210B1 (en) 2017-06-12 2020-12-02 Robert Bosch GmbH Method for cutting a separator foil, separator foil and battery cell
US11220450B2 (en) * 2018-02-06 2022-01-11 Tesla, Inc. Process to make textured glass
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
IT201900006740A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
KR102461737B1 (ko) 2020-03-18 2022-11-02 서울대학교 산학협력단 하이브리드 레이저-연마 가공기 및 이를 이용한 레이저-연마 가공 방법
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
KR102447555B1 (ko) * 2021-08-19 2022-09-23 단국대학교 산학협력단 수조의 둘레를 따른 광원의 선회 및 틸팅을 이용하는 3d 프린터

Citations (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4399345A (en) * 1981-06-09 1983-08-16 Analog Devices, Inc. Laser trimming of circuit elements on semiconductive substrates
US4406939A (en) * 1980-09-24 1983-09-27 Siemens Aktiengesellschaft Method for the manufacture of a code disk for optical incremental shaft encoders and absolute shaft encoders
US4522656A (en) * 1983-07-07 1985-06-11 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Method of making reference surface markings on semiconductor wafers by laser beam
US4532402A (en) * 1983-09-02 1985-07-30 Xrl, Inc. Method and apparatus for positioning a focused beam on an integrated circuit
US4584773A (en) * 1984-07-18 1986-04-29 Rsf Elektronik Gesellschaft M.B.H. Linear measuring system
US4594263A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Laser marking method and ablative coating for use therein
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
US4867568A (en) * 1985-07-10 1989-09-19 Rsf-Elektronik Gesellschaft M.B.H. Optoelectronic measuring system
US4926566A (en) * 1986-07-03 1990-05-22 Renishaw Plc Method of producing a metrological scale and scale produced by such method
US4932131A (en) * 1987-03-06 1990-06-12 Renishaw Plc Position determination apparatus
US4935801A (en) * 1987-01-27 1990-06-19 Inmos Corporation Metallic fuse with optically absorptive layer
US5033817A (en) * 1988-09-16 1991-07-23 Renishaw Plc Scale for use with opto-electronic scale reading apparatus
US5208437A (en) * 1990-05-18 1993-05-04 Hitachi, Ltd. Method of cutting interconnection pattern with laser and apparatus thereof
US5300756A (en) * 1991-10-22 1994-04-05 General Scanning, Inc. Method for severing integrated-circuit connection paths by a phase-plate-adjusted laser beam
US5537276A (en) * 1991-04-09 1996-07-16 Matsushita Electric Industrial Co., Ltd. Magnetic head installed on a rotary drum and method for adjusting the head height
US5630979A (en) * 1994-10-15 1997-05-20 Elastogran Gmbh Inscription of moldings
US5632916A (en) * 1992-11-09 1997-05-27 Partek Cargotec Oy Laser marking method and a metal surface marked by this method
US5656186A (en) * 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US5722989A (en) * 1995-05-22 1998-03-03 The Regents Of The University Of California Microminiaturized minimally invasive intravascular micro-mechanical systems powered and controlled via fiber-optic cable
US5808268A (en) * 1996-07-23 1998-09-15 International Business Machines Corporation Method for marking substrates
US5867305A (en) * 1996-01-19 1999-02-02 Sdl, Inc. Optical amplifier with high energy levels systems providing high peak powers
US6025256A (en) * 1997-01-06 2000-02-15 Electro Scientific Industries, Inc. Laser based method and system for integrated circuit repair or reconfiguration
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6172325B1 (en) * 1999-02-10 2001-01-09 Electro Scientific Industries, Inc. Laser processing power output stabilization apparatus and method employing processing position feedback
US6181728B1 (en) * 1998-07-02 2001-01-30 General Scanning, Inc. Controlling laser polarization
US6181463B1 (en) * 1997-03-21 2001-01-30 Imra America, Inc. Quasi-phase-matched parametric chirped pulse amplification systems
US6191486B1 (en) * 1994-03-10 2001-02-20 Massachusetts Institute Of Technology Technique for producing interconnecting conductive links
US6198568B1 (en) * 1997-04-25 2001-03-06 Imra America, Inc. Use of Chirped Quasi-phase-matched materials in chirped pulse amplification systems
US6208458B1 (en) * 1997-03-21 2001-03-27 Imra America, Inc. Quasi-phase-matched parametric chirped pulse amplification systems
US6212310B1 (en) * 1996-10-22 2001-04-03 Sdl, Inc. High power fiber gain media system achieved through power scaling via multiplexing
US6239406B1 (en) * 1998-04-01 2001-05-29 Nec Corporation Laser beam machining apparatus
US6275250B1 (en) * 1998-05-26 2001-08-14 Sdl, Inc. Fiber gain medium marking system pumped or seeded by a modulated laser diode source and method of energy control
US6281471B1 (en) * 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material
US20020000313A1 (en) * 2000-06-23 2002-01-03 Ku Nam Mo Compact air conditioner for automobiles
US20020003130A1 (en) * 2000-01-10 2002-01-10 Yunlong Sun Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths
US6339604B1 (en) * 1998-06-12 2002-01-15 General Scanning, Inc. Pulse control in laser systems
US20020005396A1 (en) * 2000-07-12 2002-01-17 Baird Brian W. UV laser system and method for single pulse severing of IC fuses
US6340806B1 (en) * 1999-12-28 2002-01-22 General Scanning Inc. Energy-efficient method and system for processing target material using an amplified, wavelength-shifted pulse train
US6341029B1 (en) * 1999-04-27 2002-01-22 Gsi Lumonics, Inc. Method and apparatus for shaping a laser-beam intensity profile by dithering
US20020017662A1 (en) * 1998-11-07 2002-02-14 Hee-Geun Jeong Manufacturing methods for defect removable semiconductor devices
US6423935B1 (en) * 2000-02-18 2002-07-23 The Regents Of The University Of California Identification marking by means of laser peening
US6423613B1 (en) * 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
US20030021324A1 (en) * 2001-07-24 2003-01-30 Gsi Lumonics, Inc. Waveguide device with mode control and pump light confinement and method of using same
US20030029495A1 (en) * 2001-05-25 2003-02-13 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
US20030039765A1 (en) * 1997-03-21 2003-02-27 Hirotoshi Hayakawa Marking method and marking material
US20030052102A1 (en) * 2001-09-11 2003-03-20 Seiko Epson Corporation Laser processing method and laser processing apparatus
US20030060910A1 (en) * 2001-09-10 2003-03-27 Williams David B. Method and system for creating a collaborative work over a digital network
US20030071020A1 (en) * 2001-10-16 2003-04-17 Minghui Hong Method of laser marking and apparatus therefor
US6552301B2 (en) * 2000-01-25 2003-04-22 Peter R. Herman Burst-ultrafast laser machining method
US6555781B2 (en) * 1999-05-10 2003-04-29 Nanyang Technological University Ultrashort pulsed laser micromachining/submicromachining using an acoustooptic scanning device with dispersion compensation
US6571486B1 (en) * 1998-11-25 2003-06-03 Dr. Johannes Heidenhain Gmbh Linear measuring device
US6588333B1 (en) * 1999-10-15 2003-07-08 Renishaw Plc Method for producing an optical scale
US6596964B2 (en) * 2001-07-10 2003-07-22 Koninklijke Philips Electronics N.V. Method of attaching a component to a connection support by welding without the addition of material
US6603136B1 (en) * 1999-10-15 2003-08-05 Videojet Systems International Laser marker focal length setting device
US6603988B2 (en) * 2001-04-13 2003-08-05 Kelsey, Inc. Apparatus and method for delivering ablative laser energy and determining the volume of tumor mass destroyed
US6604825B2 (en) * 2000-04-03 2003-08-12 Ming Lai Hybrid tracking system
US6608666B2 (en) * 2000-06-19 2003-08-19 Canon Kabushiki Kaisha Reference plate, exposure apparatus, device manufacturing system, device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
US6610351B2 (en) * 2000-04-12 2003-08-26 Quantag Systems, Inc. Raman-active taggants and their recognition
US6611484B2 (en) * 2000-10-10 2003-08-26 Tdk Corporation Optical recording medium and method
US6610380B2 (en) * 2000-08-17 2003-08-26 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, manufacturing method, recording and reproduction method, and recording/reproduction device
US6609297B1 (en) * 1997-12-11 2003-08-26 Ibiden Co., Ltd. Method of manufacturing multilayer printed wiring board
US20030161375A1 (en) * 2001-07-24 2003-08-28 Filgas David M. Waveguide architecture, waveguide devices for laser processing and beam control, and laser processing applications
US20030160034A1 (en) * 2001-07-24 2003-08-28 Filgas David M. Laser based material processing methods and scalable architecture for material processing
US20040000540A1 (en) * 2002-05-23 2004-01-01 Soboyejo Winston O. Laser texturing of surfaces for biomedical implants
US6674594B1 (en) * 1999-07-21 2004-01-06 Hitachi Maxell, Ltd. Read/write head and magnetic recording device
US6674702B2 (en) * 1998-02-02 2004-01-06 Hitachi, Ltd. Laser drive integrated circuit and optical disk apparatus using the same
US6673692B2 (en) * 2000-06-28 2004-01-06 Micron Technology, Inc. Method and apparatus for marking microelectronic dies and microelectronic devices
US6674043B2 (en) * 2001-05-08 2004-01-06 Schott Glas Method and apparatus for marking glass with a laser
US6677827B2 (en) * 2001-12-04 2004-01-13 Samsung Electro-Mechanice Co., Ltd. Temperature compensated crystal oscillator and method for adjusting output frequency thereof
US6677552B1 (en) * 2001-11-30 2004-01-13 Positive Light, Inc. System and method for laser micro-machining
US6680121B2 (en) * 2000-09-22 2004-01-20 Dmc2 Degussa Metals Catalysts Cerdec Ag Bismuth-containing laser markable compositions and methods of making and using same
US6680458B2 (en) * 1999-02-26 2004-01-20 Micron Technology, Inc. Laser marking techniques for bare semiconductor die
US6680888B2 (en) * 1997-04-15 2004-01-20 Hitachi, Ltd. Information recording/reproducing apparatus and method and information recording medium
US6679635B2 (en) * 2000-09-27 2004-01-20 Oki Electric Industry Co., Ltd. Optical device permitting passive alignment of lens element
US6680241B2 (en) * 2000-07-25 2004-01-20 Fujitsu Limited Method of manufacturing semiconductor devices by dividing wafer into chips and such semiconductor devices
US6684663B2 (en) * 1996-01-05 2004-02-03 Lazare Kaplan International, Inc. Microinscribed gemstone
US20040046288A1 (en) * 2000-07-18 2004-03-11 Chou Stephen Y. Laset assisted direct imprint lithography
US20040076813A1 (en) * 2002-10-17 2004-04-22 National Research Council Of Canada Laser chemical fabrication of nanostructures
US6731016B2 (en) * 2000-06-28 2004-05-04 Micron Technology, Inc. Method and apparatus for marking microelectronic dies and microelectronic devices
US6734387B2 (en) * 1999-05-27 2004-05-11 Spectra Physics Lasers, Inc. Method and apparatus for micro-machining of articles that include polymeric materials
US20040124184A1 (en) * 2002-06-11 2004-07-01 Chengwu An Method and apparatus for forming periodic structures
US6762072B2 (en) * 2002-03-06 2004-07-13 Robert Bosch Gmbh SI wafer-cap wafer bonding method using local laser energy, device produced by the method, and system used in the method
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
US6776340B2 (en) * 1999-07-23 2004-08-17 Tri Star Technologies, A General Partnership Duplicate laser marking discrete consumable articles
US20050029240A1 (en) * 2003-08-07 2005-02-10 Translume, Inc. Dual light source machining method and system
US20050045586A1 (en) * 2002-01-18 2005-03-03 Ellin Alexander David Scott Laser marking
US20050164118A1 (en) * 2002-01-31 2005-07-28 Claus Barholm -Hansen Method of joining a workpiece and a microstructure light exposure
US20050174042A1 (en) * 2004-01-16 2005-08-11 Ryuji Nishikawa Display panel and method for manufacturing display panel
US7005603B2 (en) * 2004-04-02 2006-02-28 Hewlett-Packard Development Company, L.P. Laser marking
US7014885B1 (en) * 1999-07-19 2006-03-21 The United States Of America As Represented By The Secretary Of The Navy Direct-write laser transfer and processing
US20060079062A1 (en) * 2004-09-24 2006-04-13 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US20060113289A1 (en) * 2001-03-29 2006-06-01 Gsi Lumonics Corporation High-speed, precision, laser-based method and system for processing material of one or more targets within a field

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763454A (en) 1972-02-22 1973-10-02 Tektronix Inc Thermal switch
US4483005A (en) 1981-09-24 1984-11-13 Teradyne, Inc. Affecting laser beam pulse width
US4423401A (en) 1982-07-21 1983-12-27 Tektronix, Inc. Thin-film electrothermal device
AT396631B (de) 1984-07-06 1993-10-25 Rsf Elektronik Gmbh Inkrementales messsystem
AT392536B (de) 1984-07-06 1991-04-25 R S F Elektronik Ohg Rechtsfor Lineares, inkrementales messsystem
US5064290A (en) 1987-12-12 1991-11-12 Renishaw Plc Opto-electronic scale-reading apparatus wherein phase-separated secondary orders of diffraction are generated
US5059764A (en) * 1988-10-31 1991-10-22 Spectra-Physics, Inc. Diode-pumped, solid state laser-based workstation for precision materials processing and machining
JPH04263455A (ja) * 1991-02-18 1992-09-18 Sharp Corp 半導体パッケージのレーザマーク消去方法及びその装置
US5058856A (en) 1991-05-08 1991-10-22 Hewlett-Packard Company Thermally-actuated microminiature valve
US5460034A (en) * 1992-07-21 1995-10-24 The United States Of America As Represented By The Secretary Of The Air Force Method for measuring and analyzing surface roughness on semiconductor laser etched facets
US5265114C1 (en) 1992-09-10 2001-08-21 Electro Scient Ind Inc System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device
US5703341A (en) 1993-11-23 1997-12-30 Lockheed Martin Energy Systems, Inc. Method for adhesion of metal films to ceramics
US5400350A (en) * 1994-03-31 1995-03-21 Imra America, Inc. Method and apparatus for generating high energy ultrashort pulses
US5696782A (en) 1995-05-19 1997-12-09 Imra America, Inc. High power fiber chirped pulse amplification systems based on cladding pumped rare-earth doped fibers
US5701319A (en) 1995-10-20 1997-12-23 Imra America, Inc. Method and apparatus for generating ultrashort pulses with adjustable repetition rates from passively modelocked fiber lasers
DE19611983C1 (de) 1996-03-26 1997-07-31 Zeiss Carl Jena Gmbh Bandförmiges, elastisch biegbares Maßband für Längen- oder Winkelmeßeinrichtungen
US6114118A (en) 1996-09-20 2000-09-05 Texas A&M University System Method of identification of animals resistant or susceptible to disease such as ruminant brucellosis, tuberculosis, paratuberculosis and salmonellosis
AU3460497A (en) 1996-09-26 1998-04-17 Sanyo Electric Co., Ltd. Recording medium and its reproducer
WO1998015380A1 (en) * 1996-10-08 1998-04-16 The University Of Arkansas Process and apparatus for sequential multi-beam laser processing of materials
US5998759A (en) 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
JP3076258B2 (ja) * 1997-01-30 2000-08-14 日本電気アイシーマイコンシステム株式会社 入力初段回路
US5812569A (en) 1997-03-21 1998-09-22 Lumonics, Inc. Stabilization of the output energy of a pulsed solid state laser
JP4500374B2 (ja) 1997-05-27 2010-07-14 ジェイディーエス ユニフエイズ コーポレーション レーザーマーキングシステムおよびエネルギー制御方法
US6012510A (en) 1997-05-28 2000-01-11 Aavid Engineering, Inc. Torsion bar clamp apparatus and method for improving thermal and mechanical contact between stacked electronic components
US6670222B1 (en) * 1997-06-14 2003-12-30 Jds Uniphase Corporation Texturing of a die pad surface for enhancing bonding strength in the surface attachment
US5818630A (en) 1997-06-25 1998-10-06 Imra America, Inc. Single-mode amplifiers and compressors based on multi-mode fibers
US6646967B1 (en) * 1997-08-12 2003-11-11 Denon Digital Llc Method for making copy protected optical discs
DE19736110C2 (de) * 1997-08-21 2001-03-01 Hannover Laser Zentrum Verfahren und Vorrichtung zur grat- und schmelzfreien Mikrobearbeitung von Werkstücken
JP3874528B2 (ja) * 1998-03-11 2007-01-31 株式会社小松製作所 半導体ウエハのレーザマーキング方法
JPH11296911A (ja) 1998-04-07 1999-10-29 Sony Corp 光ディスク、トラッキング制御装置、トラッキング制御方法、フォーカス制御装置及びフォーカス制御方法
JP3931288B2 (ja) * 1998-04-17 2007-06-13 株式会社安川電機 レーザマーキング装置およびマーキング方法
JPH11345880A (ja) 1998-06-01 1999-12-14 Fujitsu Ltd 半導体装置及びその製造方法
US6144118A (en) 1998-09-18 2000-11-07 General Scanning, Inc. High-speed precision positioning apparatus
WO2000021081A1 (fr) 1998-10-07 2000-04-13 Hitachi, Ltd. Support d'enregistrement d'information et dispositif d'enregistrement d'information
US6333485B1 (en) * 1998-12-11 2001-12-25 International Business Machines Corporation Method for minimizing sample damage during the ablation of material using a focused ultrashort pulsed beam
US6300590B1 (en) 1998-12-16 2001-10-09 General Scanning, Inc. Laser processing
DE19912310B4 (de) 1999-03-19 2007-11-29 Dr. Johannes Heidenhain Gmbh Positionsmeßeinrichtung
US6285002B1 (en) 1999-05-10 2001-09-04 Bryan Kok Ann Ngoi Three dimensional micro machining with a modulated ultra-short laser pulse
GB2370589A (en) * 1999-06-03 2002-07-03 Shelljet Pty Ltd Core orientation
US6643082B1 (en) * 1999-06-08 2003-11-04 Seagate Technology Llc Servo sector format for a patterned media
KR100322601B1 (ko) * 1999-06-18 2002-03-18 윤종용 광디스크 기록 방법, 광디스크 기록 장치의 제어 방법 및 이에 적합한 광디스크 기록 장치
JP3393469B2 (ja) * 1999-07-15 2003-04-07 日本電気株式会社 薄膜半導体素子の製造方法及び薄膜半導体形成装置
US6472295B1 (en) 1999-08-27 2002-10-29 Jmar Research, Inc. Method and apparatus for laser ablation of a target material
US20010027965A1 (en) * 1999-10-07 2001-10-11 Mccay Mary Helen Method for gas assisted energy beam engraving of a target object
DE19948705A1 (de) * 1999-10-09 2001-04-12 Zeiss Carl Jena Gmbh Absteckvorrichtung
JP2001126328A (ja) 1999-10-29 2001-05-11 Sony Corp 光磁気記録媒体
JP4373547B2 (ja) * 1999-10-29 2009-11-25 京セラ株式会社 多数個取り配線基板
DE10000469C2 (de) * 2000-01-07 2003-07-03 Schott Spezialglas Gmbh Verfahren zum fortlaufenden Ablängen von Zuschnitten aus einem kontinuierlich bewegten Endlosmaterial und zugehörige Vorrichtung
JP3982136B2 (ja) * 2000-02-04 2007-09-26 セイコーエプソン株式会社 レーザ加工方法及びその装置
JP3786343B2 (ja) * 2000-05-12 2006-06-14 日本ビクター株式会社 光ディスク再生装置
US6483071B1 (en) 2000-05-16 2002-11-19 General Scanning Inc. Method and system for precisely positioning a waist of a material-processing laser beam to process microstructures within a laser-processing site
US6662063B2 (en) * 2000-05-16 2003-12-09 Gsi Lumonics Corporation Method and subsystem for determining a sequence in which microstructures are to be processed at a laser-processing site
US6495791B2 (en) 2000-05-16 2002-12-17 General Scanning, Inc. Method and subsystem for generating a trajectory to be followed by a motor-driven stage when processing microstructures at a laser-processing site
JP4310890B2 (ja) * 2000-06-01 2009-08-12 ソニー株式会社 光ディスク装置、光ディスクのアクセス方法及び光ディスク
US6539143B1 (en) * 2000-07-31 2003-03-25 Sarcon Microsystems, Inc. Optical switching system
TW503188B (en) 2000-08-29 2002-09-21 Sumitomo Heavy Industries Marking method, device the optical member marked
US6642475B2 (en) * 2000-09-08 2003-11-04 David Benderly Etched article and method of etching
US7157038B2 (en) * 2000-09-20 2007-01-02 Electro Scientific Industries, Inc. Ultraviolet laser ablative patterning of microstructures in semiconductors
US6660964B1 (en) * 2000-09-22 2003-12-09 David Benderly Optical modification of laser beam cross section in object marking systems
JP3814476B2 (ja) * 2000-09-28 2006-08-30 日本ビクター株式会社 情報記録方法及び情報記録装置
JP3602465B2 (ja) * 2000-10-10 2004-12-15 Ｎｅｃエレクトロニクス株式会社 半導体装置、半導体装置の評価解析方法及び半導体装置の加工装置
JP2002131883A (ja) 2000-10-27 2002-05-09 Hitachi Ltd フォトマスクの製造方法およびフォトマスク
TW464585B (en) * 2000-11-22 2001-11-21 Hannstar Display Corp Laser aided pressing device and the adjusting method of pressing position
KR100752547B1 (ko) * 2000-12-29 2007-08-29 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판의 아이디 마크 및 그의 형성방법
KR100500469B1 (ko) * 2001-01-12 2005-07-12 삼성전자주식회사 정렬마크와 이를 이용하는 노광정렬시스템 및 그 정렬방법
JP2002237036A (ja) * 2001-02-08 2002-08-23 Hitachi Ltd 情報記録方法、再生方法及び情報記録装置
US6656815B2 (en) * 2001-04-04 2003-12-02 International Business Machines Corporation Process for implanting a deep subcollector with self-aligned photo registration marks
US6665243B2 (en) * 2001-04-11 2003-12-16 Zoran Corporation Method and apparatus for recording a compact disc at a sub-1X speeds
DE10125206B4 (de) * 2001-05-14 2005-03-10 Forschungsverbund Berlin Ev Verfahren zur direkten Mikrostrukturierung von Materialien
DE20108393U1 (de) 2001-05-18 2001-07-26 Laser Optoelektronik Gmbh Z Markiervorrichtung
US7358157B2 (en) * 2002-03-27 2008-04-15 Gsi Group Corporation Method and system for high-speed precise laser trimming, scan lens system for use therein and electrical device produced thereby
US7119351B2 (en) * 2002-05-17 2006-10-10 Gsi Group Corporation Method and system for machine vision-based feature detection and mark verification in a workpiece or wafer marking system
US6719621B2 (en) * 2002-05-31 2004-04-13 Townsend Engineering Company Method and means for stuffing natural casings with sausage emulsion
US6797324B2 (en) * 2002-05-31 2004-09-28 Nicholas J. Pollara Glass printing process
US20030224581A1 (en) * 2002-06-03 2003-12-04 Robert Bosch Gmbh Flip chip packaging process using laser-induced metal bonding technology, system utilizing the method, and device created by the method
US6635846B1 (en) 2002-08-02 2003-10-21 Albert S. Rieck Selective laser compounding for vitrescent markings
US6661106B1 (en) * 2002-08-13 2003-12-09 International Business Machines Corporation Alignment mark structure for laser fusing and method of use

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4406939A (en) * 1980-09-24 1983-09-27 Siemens Aktiengesellschaft Method for the manufacture of a code disk for optical incremental shaft encoders and absolute shaft encoders
US4399345A (en) * 1981-06-09 1983-08-16 Analog Devices, Inc. Laser trimming of circuit elements on semiconductive substrates
US4522656A (en) * 1983-07-07 1985-06-11 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Method of making reference surface markings on semiconductor wafers by laser beam
US4532402A (en) * 1983-09-02 1985-07-30 Xrl, Inc. Method and apparatus for positioning a focused beam on an integrated circuit
US4584773A (en) * 1984-07-18 1986-04-29 Rsf Elektronik Gesellschaft M.B.H. Linear measuring system
US4594263A (en) * 1984-12-17 1986-06-10 Motorola, Inc. Laser marking method and ablative coating for use therein
US4867568A (en) * 1985-07-10 1989-09-19 Rsf-Elektronik Gesellschaft M.B.H. Optoelectronic measuring system
US4926566A (en) * 1986-07-03 1990-05-22 Renishaw Plc Method of producing a metrological scale and scale produced by such method
US4935801A (en) * 1987-01-27 1990-06-19 Inmos Corporation Metallic fuse with optically absorptive layer
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
US4932131A (en) * 1987-03-06 1990-06-12 Renishaw Plc Position determination apparatus
US5033817A (en) * 1988-09-16 1991-07-23 Renishaw Plc Scale for use with opto-electronic scale reading apparatus
US5208437A (en) * 1990-05-18 1993-05-04 Hitachi, Ltd. Method of cutting interconnection pattern with laser and apparatus thereof
US5537276A (en) * 1991-04-09 1996-07-16 Matsushita Electric Industrial Co., Ltd. Magnetic head installed on a rotary drum and method for adjusting the head height
US5300756A (en) * 1991-10-22 1994-04-05 General Scanning, Inc. Method for severing integrated-circuit connection paths by a phase-plate-adjusted laser beam
US5632916A (en) * 1992-11-09 1997-05-27 Partek Cargotec Oy Laser marking method and a metal surface marked by this method
US6191486B1 (en) * 1994-03-10 2001-02-20 Massachusetts Institute Of Technology Technique for producing interconnecting conductive links
US5656186A (en) * 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US5630979A (en) * 1994-10-15 1997-05-20 Elastogran Gmbh Inscription of moldings
US5722989A (en) * 1995-05-22 1998-03-03 The Regents Of The University Of California Microminiaturized minimally invasive intravascular micro-mechanical systems powered and controlled via fiber-optic cable
US6684663B2 (en) * 1996-01-05 2004-02-03 Lazare Kaplan International, Inc. Microinscribed gemstone
US5867305A (en) * 1996-01-19 1999-02-02 Sdl, Inc. Optical amplifier with high energy levels systems providing high peak powers
US5933271A (en) * 1996-01-19 1999-08-03 Sdl, Inc. Optical amplifiers providing high peak powers with high energy levels
US5808268A (en) * 1996-07-23 1998-09-15 International Business Machines Corporation Method for marking substrates
US6411323B1 (en) * 1996-10-22 2002-06-25 Sdl, Inc. High power marking system achieved through power scaling via multiplexing
US6212310B1 (en) * 1996-10-22 2001-04-03 Sdl, Inc. High power fiber gain media system achieved through power scaling via multiplexing
US6275632B1 (en) * 1996-10-22 2001-08-14 Sdl, Inc. High power fiber gain media system achieved through power scaling via multiplexing
US6025256A (en) * 1997-01-06 2000-02-15 Electro Scientific Industries, Inc. Laser based method and system for integrated circuit repair or reconfiguration
US6181463B1 (en) * 1997-03-21 2001-01-30 Imra America, Inc. Quasi-phase-matched parametric chirped pulse amplification systems
US6709720B2 (en) * 1997-03-21 2004-03-23 Kabushiki Kaisha Yaskawa Denki Marking method and marking material
US6208458B1 (en) * 1997-03-21 2001-03-27 Imra America, Inc. Quasi-phase-matched parametric chirped pulse amplification systems
US20030039765A1 (en) * 1997-03-21 2003-02-27 Hirotoshi Hayakawa Marking method and marking material
US6680888B2 (en) * 1997-04-15 2004-01-20 Hitachi, Ltd. Information recording/reproducing apparatus and method and information recording medium
US6198568B1 (en) * 1997-04-25 2001-03-06 Imra America, Inc. Use of Chirped Quasi-phase-matched materials in chirped pulse amplification systems
US6609297B1 (en) * 1997-12-11 2003-08-26 Ibiden Co., Ltd. Method of manufacturing multilayer printed wiring board
US6674702B2 (en) * 1998-02-02 2004-01-06 Hitachi, Ltd. Laser drive integrated circuit and optical disk apparatus using the same
US6239406B1 (en) * 1998-04-01 2001-05-29 Nec Corporation Laser beam machining apparatus
US6275250B1 (en) * 1998-05-26 2001-08-14 Sdl, Inc. Fiber gain medium marking system pumped or seeded by a modulated laser diode source and method of energy control
US6057180A (en) * 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6339604B1 (en) * 1998-06-12 2002-01-15 General Scanning, Inc. Pulse control in laser systems
US6181728B1 (en) * 1998-07-02 2001-01-30 General Scanning, Inc. Controlling laser polarization
US20020017662A1 (en) * 1998-11-07 2002-02-14 Hee-Geun Jeong Manufacturing methods for defect removable semiconductor devices
US6423613B1 (en) * 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
US6571486B1 (en) * 1998-11-25 2003-06-03 Dr. Johannes Heidenhain Gmbh Linear measuring device
US6172325B1 (en) * 1999-02-10 2001-01-09 Electro Scientific Industries, Inc. Laser processing power output stabilization apparatus and method employing processing position feedback
US6680458B2 (en) * 1999-02-26 2004-01-20 Micron Technology, Inc. Laser marking techniques for bare semiconductor die
US6341029B1 (en) * 1999-04-27 2002-01-22 Gsi Lumonics, Inc. Method and apparatus for shaping a laser-beam intensity profile by dithering
US6555781B2 (en) * 1999-05-10 2003-04-29 Nanyang Technological University Ultrashort pulsed laser micromachining/submicromachining using an acoustooptic scanning device with dispersion compensation
US6734387B2 (en) * 1999-05-27 2004-05-11 Spectra Physics Lasers, Inc. Method and apparatus for micro-machining of articles that include polymeric materials
US7014885B1 (en) * 1999-07-19 2006-03-21 The United States Of America As Represented By The Secretary Of The Navy Direct-write laser transfer and processing
US6674594B1 (en) * 1999-07-21 2004-01-06 Hitachi Maxell, Ltd. Read/write head and magnetic recording device
US6776340B2 (en) * 1999-07-23 2004-08-17 Tri Star Technologies, A General Partnership Duplicate laser marking discrete consumable articles
US6588333B1 (en) * 1999-10-15 2003-07-08 Renishaw Plc Method for producing an optical scale
US6603136B1 (en) * 1999-10-15 2003-08-05 Videojet Systems International Laser marker focal length setting device
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
US6340806B1 (en) * 1999-12-28 2002-01-22 General Scanning Inc. Energy-efficient method and system for processing target material using an amplified, wavelength-shifted pulse train
US6703582B2 (en) * 1999-12-28 2004-03-09 Gsi Lumonics Corporation Energy-efficient method and system for processing target material using an amplified, wavelength-shifted pulse train
US6281471B1 (en) * 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material
US6727458B2 (en) * 1999-12-28 2004-04-27 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material
US6574250B2 (en) * 2000-01-10 2003-06-03 Electro Scientific Industries, Inc. Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths
US20020003130A1 (en) * 2000-01-10 2002-01-10 Yunlong Sun Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths
US6552301B2 (en) * 2000-01-25 2003-04-22 Peter R. Herman Burst-ultrafast laser machining method
US6423935B1 (en) * 2000-02-18 2002-07-23 The Regents Of The University Of California Identification marking by means of laser peening
US6604825B2 (en) * 2000-04-03 2003-08-12 Ming Lai Hybrid tracking system
US6610351B2 (en) * 2000-04-12 2003-08-26 Quantag Systems, Inc. Raman-active taggants and their recognition
US6608666B2 (en) * 2000-06-19 2003-08-19 Canon Kabushiki Kaisha Reference plate, exposure apparatus, device manufacturing system, device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
US20020000313A1 (en) * 2000-06-23 2002-01-03 Ku Nam Mo Compact air conditioner for automobiles
US6731016B2 (en) * 2000-06-28 2004-05-04 Micron Technology, Inc. Method and apparatus for marking microelectronic dies and microelectronic devices
US6673692B2 (en) * 2000-06-28 2004-01-06 Micron Technology, Inc. Method and apparatus for marking microelectronic dies and microelectronic devices
US20020005396A1 (en) * 2000-07-12 2002-01-17 Baird Brian W. UV laser system and method for single pulse severing of IC fuses
US20040046288A1 (en) * 2000-07-18 2004-03-11 Chou Stephen Y. Laset assisted direct imprint lithography
US6680241B2 (en) * 2000-07-25 2004-01-20 Fujitsu Limited Method of manufacturing semiconductor devices by dividing wafer into chips and such semiconductor devices
US6610380B2 (en) * 2000-08-17 2003-08-26 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, manufacturing method, recording and reproduction method, and recording/reproduction device
US6680121B2 (en) * 2000-09-22 2004-01-20 Dmc2 Degussa Metals Catalysts Cerdec Ag Bismuth-containing laser markable compositions and methods of making and using same
US6679635B2 (en) * 2000-09-27 2004-01-20 Oki Electric Industry Co., Ltd. Optical device permitting passive alignment of lens element
US6611484B2 (en) * 2000-10-10 2003-08-26 Tdk Corporation Optical recording medium and method
US20060113289A1 (en) * 2001-03-29 2006-06-01 Gsi Lumonics Corporation High-speed, precision, laser-based method and system for processing material of one or more targets within a field
US6603988B2 (en) * 2001-04-13 2003-08-05 Kelsey, Inc. Apparatus and method for delivering ablative laser energy and determining the volume of tumor mass destroyed
US6674043B2 (en) * 2001-05-08 2004-01-06 Schott Glas Method and apparatus for marking glass with a laser
US20030029495A1 (en) * 2001-05-25 2003-02-13 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
US6596964B2 (en) * 2001-07-10 2003-07-22 Koninklijke Philips Electronics N.V. Method of attaching a component to a connection support by welding without the addition of material
US20030021324A1 (en) * 2001-07-24 2003-01-30 Gsi Lumonics, Inc. Waveguide device with mode control and pump light confinement and method of using same
US20030160034A1 (en) * 2001-07-24 2003-08-28 Filgas David M. Laser based material processing methods and scalable architecture for material processing
US20030161375A1 (en) * 2001-07-24 2003-08-28 Filgas David M. Waveguide architecture, waveguide devices for laser processing and beam control, and laser processing applications
US20030060910A1 (en) * 2001-09-10 2003-03-27 Williams David B. Method and system for creating a collaborative work over a digital network
US20030052102A1 (en) * 2001-09-11 2003-03-20 Seiko Epson Corporation Laser processing method and laser processing apparatus
US20030071020A1 (en) * 2001-10-16 2003-04-17 Minghui Hong Method of laser marking and apparatus therefor
US6677552B1 (en) * 2001-11-30 2004-01-13 Positive Light, Inc. System and method for laser micro-machining
US6677827B2 (en) * 2001-12-04 2004-01-13 Samsung Electro-Mechanice Co., Ltd. Temperature compensated crystal oscillator and method for adjusting output frequency thereof
US20050045586A1 (en) * 2002-01-18 2005-03-03 Ellin Alexander David Scott Laser marking
US20050164118A1 (en) * 2002-01-31 2005-07-28 Claus Barholm -Hansen Method of joining a workpiece and a microstructure light exposure
US6762072B2 (en) * 2002-03-06 2004-07-13 Robert Bosch Gmbh SI wafer-cap wafer bonding method using local laser energy, device produced by the method, and system used in the method
US20040000540A1 (en) * 2002-05-23 2004-01-01 Soboyejo Winston O. Laser texturing of surfaces for biomedical implants
US20040124184A1 (en) * 2002-06-11 2004-07-01 Chengwu An Method and apparatus for forming periodic structures
US20040076813A1 (en) * 2002-10-17 2004-04-22 National Research Council Of Canada Laser chemical fabrication of nanostructures
US20050029240A1 (en) * 2003-08-07 2005-02-10 Translume, Inc. Dual light source machining method and system
US20050174042A1 (en) * 2004-01-16 2005-08-11 Ryuji Nishikawa Display panel and method for manufacturing display panel
US7005603B2 (en) * 2004-04-02 2006-02-28 Hewlett-Packard Development Company, L.P. Laser marking
US20060079062A1 (en) * 2004-09-24 2006-04-13 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

Cited By (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8253066B2 (en) 1999-12-28 2012-08-28 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US7666759B2 (en) 2002-03-27 2010-02-23 Gsi Lumonics Corporation Method and system for high-speed, precise micromachining an array of devices
US7563695B2 (en) 2002-03-27 2009-07-21 Gsi Group Corporation Method and system for high-speed precise laser trimming and scan lens for use therein
US7871903B2 (en) 2002-03-27 2011-01-18 Gsi Group Corporation Method and system for high-speed, precise micromachining an array of devices
US20070178714A1 (en) * 2002-03-27 2007-08-02 Bo Gu Method and system for high-speed precise laser trimming and scan lens for use therein
US20070031993A1 (en) * 2002-05-17 2007-02-08 Gsi Lumonics Corporation Method and system for machine vision-based feature detection and mark verification in a workpiece or wafer marking system
USRE41924E1 (en) 2002-05-17 2010-11-16 Gsi Group Corporation Method and system for machine vision-based feature detection and mark verification in a workpiece or wafer marking system
US20040144760A1 (en) * 2002-05-17 2004-07-29 Cahill Steven P. Method and system for marking a workpiece such as a semiconductor wafer and laser marker for use therein
US7705268B2 (en) 2004-11-11 2010-04-27 Gsi Group Corporation Method and system for laser soft marking
US7466466B2 (en) 2005-05-11 2008-12-16 Gsi Group Corporation Optical scanning method and system and method for correcting optical aberrations introduced into the system by a beam deflector
US20060256181A1 (en) * 2005-05-11 2006-11-16 Ehrmann Jonathan S Optical scanning method and system and method for correcting optical aberrations introduced into the system by a beam deflector
US7884323B2 (en) * 2005-08-16 2011-02-08 Cameca Instruments, Inc. Atom probes, atom probe specimens, and associated methods
US20080308728A1 (en) * 2005-08-16 2008-12-18 Imago Scientific Instruments Corporation Atom Probes, Atom Probe Specimens, and Associated Methods
US8314359B2 (en) * 2005-09-08 2012-11-20 Imra America, Inc. Methods and systems for laser welding transparent materials with an ultrashort pulsed laser
US20100012631A1 (en) * 2005-09-08 2010-01-21 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US9138913B2 (en) * 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US8530786B2 (en) 2005-09-08 2013-09-10 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US20100084384A1 (en) * 2005-09-08 2010-04-08 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US20100025387A1 (en) * 2005-09-08 2010-02-04 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US9636773B2 (en) 2005-09-08 2017-05-02 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US9751154B2 (en) 2005-09-08 2017-09-05 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
US20070095802A1 (en) * 2005-11-03 2007-05-03 Hon Hai Precision Industry Co., Ltd. Laser treatment apparatus
US20070117227A1 (en) * 2005-11-23 2007-05-24 Gsi Group Corporation Method And System for Iteratively, Selectively Tuning A Parameter Of A Doped Workpiece Using A Pulsed Laser
US20100219506A1 (en) * 2005-12-21 2010-09-02 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing and Crystallization of Material Surfaces
US8753990B2 (en) * 2005-12-21 2014-06-17 University Of Virginia Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
US8846551B2 (en) 2005-12-21 2014-09-30 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
WO2007090051A3 (en) * 2006-01-30 2008-01-31 Gsi Group Corp Method and system for high-speed precise laser trimming and scan lens for use therein
TWI452605B (zh) * 2006-01-30 2014-09-11 Gsi Group Corp 高速精準雷射修整之方法與系統，以及用於其內之掃描透鏡
WO2007090051A2 (en) * 2006-01-30 2007-08-09 Gsi Group Corporation Method and system for high-speed precise laser trimming and scan lens for use therein
WO2007116124A1 (en) * 2006-04-12 2007-10-18 Picodeon Ltd Oy Method for adjusting ablation threshold
DE102006019118B4 (de) * 2006-04-25 2011-08-18 Epcos Ag, 81669 Bauelement mit optischer Markierung und Verfahren zur Herstellung
DE102006019118A1 (de) * 2006-04-25 2007-10-31 Epcos Ag Element mit optischer Markierung, Verfahren zur Herstellung und Verwendung
US20090104415A1 (en) * 2006-04-25 2009-04-23 Alexander Schmajew Element with Optical Marking, Manufacturing Method, and Use
US8691369B2 (en) 2006-04-25 2014-04-08 Epcos Ag Element with optical marking, manufacturing method, and use
WO2007140190A1 (en) * 2006-05-24 2007-12-06 Electro Scientific Industries, Inc. Laser processing of workpieces containing low-k dielectric material
US20070272555A1 (en) * 2006-05-24 2007-11-29 Baird Brian W Laser processing of workpieces containing low-k dielectric material
US8198566B2 (en) * 2006-05-24 2012-06-12 Electro Scientific Industries, Inc. Laser processing of workpieces containing low-k dielectric material
US9383732B2 (en) 2006-06-05 2016-07-05 Electro Scientific Industries, Inc. Method and system for adaptively controlling a laser-based material processing process and method and system for qualifying same
US20110208304A1 (en) * 2006-06-07 2011-08-25 Medicinelodge, Inc. Dba Imds Co-Innovation Laser Based Metal Deposition LBMD of Antimicrobials to Implant Surfaces
US20080000887A1 (en) * 2006-06-28 2008-01-03 Seagate Technology Llc Method of laser honing
US8541714B2 (en) 2006-09-15 2013-09-24 Electro Scientific Industries, Inc. Method and system for laser processing targets of different types on a workpiece
US20100237051A1 (en) * 2006-09-15 2010-09-23 Gsi Group Corporation Method and system for laser processing targets of different types on a workpiece
US7732731B2 (en) 2006-09-15 2010-06-08 Gsi Group Corporation Method and system for laser processing targets of different types on a workpiece
US20080067155A1 (en) * 2006-09-15 2008-03-20 Bo Gu Method and system for laser processing targets of different types on a workpiece
US20080299408A1 (en) * 2006-09-29 2008-12-04 University Of Rochester Femtosecond Laser Pulse Surface Structuring Methods and Materials Resulting Therefrom
US8685185B2 (en) * 2006-09-29 2014-04-01 University Of Rochester Femtosecond laser pulse surface structuring methods and materials resulting therefrom
US10786874B2 (en) 2006-09-29 2020-09-29 University Of Rochester Femtosecond laser pulse surface structuring methods and materials resulting therefrom
US20120067855A1 (en) * 2006-09-29 2012-03-22 University Of Rochester Femtosecond laser pulse surface structuring methods and materials resulting therefrom
US20080216926A1 (en) * 2006-09-29 2008-09-11 Chunlei Guo Ultra-short duration laser methods for the nanostructuring of materials
US10876193B2 (en) 2006-09-29 2020-12-29 University Of Rochester Nanostructured materials, methods, and applications
WO2008043934A3 (fr) * 2006-10-03 2008-06-26 Microcomposants Haute Securite Procédé de marquage individuel de circuits intégrés et circuit intégré marqué selon ce procédé
FR2906646A1 (fr) * 2006-10-03 2008-04-04 Microcomposants De Haute Secur Procede de marquage individuel de circuits integres et circuit integre marque selon ce procede.
WO2008043934A2 (fr) * 2006-10-03 2008-04-17 Microcomposants Haute Sécurité Mhs Procédé de marquage individuel de circuits intégrés et circuit intégré marqué selon ce procédé
US8420978B2 (en) 2007-01-18 2013-04-16 The Board Of Trustees Of The University Of Illinois High throughput, low cost dual-mode patterning method for large area substrates
US20080176398A1 (en) * 2007-01-18 2008-07-24 Kanti Jain High throughput, low cost dual-mode patterning method for large area substrates
US8995029B2 (en) 2007-01-23 2015-03-31 Imra America, Inc. Ultrashort laser micro-texture printing
US8670151B2 (en) 2007-01-23 2014-03-11 Imra America, Inc. Ultrashort laser micro-texture printing
US8405885B2 (en) 2007-01-23 2013-03-26 Imra America, Inc. Ultrashort laser micro-texture printing
US20080192618A1 (en) * 2007-02-09 2008-08-14 Yoshiko Nakata Laser rewriting system
US8164610B2 (en) * 2007-02-09 2012-04-24 Ricoh Company, Ltd. Apparatus for writing an image on the target object to be managed
US20100143744A1 (en) * 2007-03-09 2010-06-10 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing of Material Surfaces and their Applications
US20100276404A1 (en) * 2009-04-30 2010-11-04 Mitsuboshi Diamond Industrial Co., Ltd. Laser machining method and laser machining apparatus
US20110185971A1 (en) * 2009-11-30 2011-08-04 Uvtech Systems, Inc. Laser doping
US9375946B2 (en) 2010-02-11 2016-06-28 Electro Scientific Industries, Inc. Method and apparatus for reliably laser marking articles
CN101862900A (zh) * 2010-05-28 2010-10-20 北京数码大方科技有限公司 焊接方法及焊接设备
US10112263B2 (en) 2010-06-25 2018-10-30 Electro Scientific Industries, Inc. Method and apparatus for reliably laser marking articles
CN102971109A (zh) * 2010-06-25 2013-03-13 伊雷克托科学工业股份有限公司 用于可靠地镭射标记物品的方法及设备
CN102545017A (zh) * 2010-12-14 2012-07-04 澳门科技大学 一种用于芘荧光光谱检测的拉曼激光源的实现方法和装置
US8942071B2 (en) 2011-02-04 2015-01-27 Lucinda Price Color storage and transmission systems and methods
CN102958640A (zh) * 2011-03-10 2013-03-06 伊雷克托科学工业股份有限公司 用于可靠地镭射标记物品的方法和装置
CN103228399A (zh) * 2011-03-10 2013-07-31 伊雷克托科学工业股份有限公司 用于可靠地镭射标记物品的方法和装置
TWI640384B (zh) * 2011-03-21 2018-11-11 美商伊雷克托科學工業股份有限公司 在物品上建立標記的方法、雷射標記裝置、具有標記的物品、具有標記的經陽極氧化的物品及經陽極氧化的物品
TWI583478B (zh) * 2011-03-21 2017-05-21 伊雷克托科學工業股份有限公司 經過陽極氧化之鋁質物品
US10131086B2 (en) 2011-06-30 2018-11-20 University Of Virginia Patent Foundation Micro-structure and nano-structure replication methods and article of manufacture
CN104010759A (zh) * 2011-10-21 2014-08-27 美国激光企业有限责任公司 配置为使用电磁辐射从基板移除涂层的系统
US10081078B2 (en) 2011-10-21 2018-09-25 Surclean, Inc. System and method for coating removal using radiation
WO2013059779A1 (en) * 2011-10-21 2013-04-25 American Laser Enterprises, Llc System configured for removing a coating from a substrate using electromagnetic radiation
US9573226B2 (en) 2011-10-21 2017-02-21 Surclean, Inc. System configured for removing a coating from a substrate using electromagnetic radiation
WO2014009200A3 (de) * 2012-07-10 2014-04-17 Rofin-Baasel Lasertech Gmbh & Co. Kg Verfahren zum markieren von bauteilen eines triebwerkes für ein flugzeug
WO2014066251A1 (en) * 2012-10-22 2014-05-01 Electro Scientific Industries, Inc. Method and apparatus for marking an article
US10213871B2 (en) 2012-10-22 2019-02-26 Electro Scientific Industries, Inc. Method and apparatus for marking an article
TWI511821B (zh) * 2012-12-14 2015-12-11 Kataoka Corp Laser processing machine
CN104884205A (zh) * 2012-12-20 2015-09-02 伊雷克托科学工业股份有限公司 经由激光微加工形成影像的方法
US20150016826A1 (en) * 2013-07-11 2015-01-15 Technion Research & Development Foundation Limited Method and system for transmitting light
US9544065B2 (en) * 2013-07-11 2017-01-10 Technion Research & Development Foundation Limited Method and system for transmitting light
US11498156B2 (en) 2014-07-03 2022-11-15 Nippon Steel Corporation Laser processing apparatus
EP3165615A4 (en) * 2014-07-03 2018-01-24 Nippon Steel & Sumitomo Metal Corporation Laser machining device
US20160358057A1 (en) * 2014-08-11 2016-12-08 Brian Kieser Structurally encoded component and method of manufacturing structurally encoded component
US20170341183A1 (en) * 2014-12-12 2017-11-30 Velo3D, Inc. Control Systems for Three-Dimensional Printing
US9824784B2 (en) * 2015-03-16 2017-11-21 Ricoh Company, Ltd. Protection barrier and laser irradiation system
US20160276047A1 (en) * 2015-03-16 2016-09-22 Ricoh Company, Ltd. Protection barrier and laser irradiation system
US11567006B2 (en) 2015-05-20 2023-01-31 Quantum-Si Incorporated Optical sources for fluorescent lifetime analysis
US11466316B2 (en) * 2015-05-20 2022-10-11 Quantum-Si Incorporated Pulsed laser and bioanalytic system
AU2016264737B2 (en) * 2015-05-20 2021-09-09 Quantum-Si Incorporated Pulsed laser and bioanalytic system
US11384003B2 (en) * 2016-01-11 2022-07-12 Zwiesel Kristallglas Ag Laser filamentation
CN105904095A (zh) * 2016-06-23 2016-08-31 济南邦德激光股份有限公司 一种打标机
US11691343B2 (en) 2016-06-29 2023-07-04 Velo3D, Inc. Three-dimensional printing and three-dimensional printers
US11322906B2 (en) 2016-12-16 2022-05-03 Quantum-Si Incorporated Compact mode-locked laser module
US11848531B2 (en) 2016-12-16 2023-12-19 Quantum-Si Incorporated Compact mode-locked laser module
US11249318B2 (en) 2016-12-16 2022-02-15 Quantum-Si Incorporated Compact beam shaping and steering assembly
US10888925B2 (en) 2017-03-02 2021-01-12 Velo3D, Inc. Three-dimensional printing of three-dimensional objects
WO2018213366A1 (en) * 2017-05-17 2018-11-22 General Electric Company Surface treatment of turbomachinery
US10610963B2 (en) 2017-05-17 2020-04-07 General Electric Company Surface treatment of turbomachinery
US11808700B2 (en) 2018-06-15 2023-11-07 Quantum-Si Incorporated Data acquisition control for advanced analytic instruments having pulsed optical sources
US11747561B2 (en) 2019-06-14 2023-09-05 Quantum-Si Incorporated Sliced grating coupler with increased beam alignment sensitivity
US11999110B2 (en) 2019-07-26 2024-06-04 Velo3D, Inc. Quality assurance in formation of three-dimensional objects
US20210035767A1 (en) * 2019-07-29 2021-02-04 Applied Materials, Inc. Methods for repairing a recess of a chamber component
TWI775106B (zh) * 2019-08-07 2022-08-21 日商Ｓｕｍｃｏ股份有限公司 雷射標記的印刷方法及具有雷射標記的矽晶圓的製造方法
US20210285084A1 (en) * 2020-03-10 2021-09-16 Jvis-Usa, Llc Laser-Based Method and System for Marking a Workpiece
AT524312A4 (de) * 2020-12-22 2022-05-15 Hofall Holding 1 Gmbh Verfahren zur Herstellung eines oberflächenmodifizierten Metallimplantats
WO2022133509A1 (de) 2020-12-22 2022-06-30 Hofall Holding 1 Gmbh Verfahren zur herstellung eines oberflächenmodifizierten metallimplantats
AT524312B1 (de) * 2020-12-22 2022-05-15 Hofall Holding 1 Gmbh Verfahren zur Herstellung eines oberflächenmodifizierten Metallimplantats
FR3121060A1 (fr) * 2021-03-29 2022-09-30 Qiova Procédé et dispositif pour former une figure sur ou dans une pièce
WO2022208020A1 (fr) * 2021-03-29 2022-10-06 Qiova Procédé et dispositif pour former une figure sur ou dans une pièce
CN113263027A (zh) * 2021-05-26 2021-08-17 金顿激光科技(佛山)有限公司 一种基于激光清洗参数优化的激光控制方法及系统
WO2023280964A1 (en) * 2021-07-09 2023-01-12 Université D'aix-Marseille Method for optical writing in a semiconductor material, corresponding computer program product, storing medium and writing device
EP4116030A1 (en) * 2021-07-09 2023-01-11 Aix-Marseille Université Method for optical writing in a semiconductor material, corresponding computer program product, storing medium and writing device
WO2024006968A3 (en) * 2022-06-30 2024-03-14 University Of Virginia Patent Foundation Microtexturized substrates and methods for producing the same
US12029653B1 (en) 2023-06-14 2024-07-09 Spine Wave, Inc. Medical implant having a textured tissue contact surface

Also Published As

Publication number Publication date
ATE550132T1 (de) 2012-04-15
EP1779286A4 (en) 2008-12-03
KR20070036784A (ko) 2007-04-03
KR101278433B1 (ko) 2013-06-24
WO2006012124A3 (en) 2006-08-10
WO2006012124A2 (en) 2006-02-02
US20080073438A1 (en) 2008-03-27
US7469831B2 (en) 2008-12-30
EP1779286B1 (en) 2012-03-21
JP2008504964A (ja) 2008-02-21
WO2006012124A8 (en) 2006-03-23
EP1779286A2 (en) 2007-05-02
US20080011852A1 (en) 2008-01-17

Similar Documents

Publication Publication Date Title
US7469831B2 (en) Laser-based method and system for processing targeted surface material and article produced thereby
CN1981291B (zh) 基于激光的用于处理目标表面材料的方法
JP4490883B2 (ja) レーザ加工装置およびレーザ加工方法
TWI829703B (zh) 雷射加工設備、其操作方法以及使用其加工工件的方法
EP1328372B1 (en) Control of laser machining
US9321126B2 (en) Laser-based material processing apparatus and methods
US8785813B2 (en) Laser-based material processing methods and systems
CN101432853B (zh) 包含低k介电材料的工件的激光处理
EP2828028B1 (en) Method and apparatus for forming fine scale structures in dielectric substrate
US20070272667A1 (en) Micromachining with short-pulsed, solid-state UV laser
US20060108337A1 (en) Method and system for laser soft marking
JP2008504964A5 (ko)
TW525240B (en) Ultraviolet laser ablative patterning of microstructures in semiconductors
EP2246146A1 (en) Laser machining method and laser machining apparatus
US20150050468A1 (en) Laser systems and methods for internally marking thin layers, and articles produced thereby
WO2003033199A1 (en) Method for improved wafer alignment
US6583380B2 (en) Device and method for marking copper-clad laminates
TW201904700A (zh) 雷射加工設備、使用方法及相關配置
Boogaard Precision laser micromachining
JP2006315035A (ja) レーザーマーキング方法及びその装置
Ho et al. Sub-microdrilling with ultrafast pulse laser interference
Farkouh Femtosecond Laser Micromachining of Low-Temperature Co-Fired Ceramic and Glass Fiber Reinforced Polymer Printed Circuit Boards Materials
Henry et al. Nanoscale analysis of laser ablated thin films used in industrial manufacturing of flat panel displays
Gu New laser marking technology using ultrafast lasers
Gu Latest development in chip scale package laser marking and micro laser marking

Legal Events

Date Code Title Description
AS Assignment

Owner name: GSI GROUP CORPORATION, MASSACHUSETTS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GU, BO;EHRMANN, JONATHAN S.;SVETKOFF, DONALD J.;AND OTHERS;REEL/FRAME:016991/0216;SIGNING DATES FROM 20050907 TO 20050912

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION

AS Assignment

Owner name: ELECTRO SCIENTIFIC INDUSTRIES, INC., OREGON

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GSI GROUP CORPORATION;GSI GROUP INC;REEL/FRAME:030582/0160

Effective date: 20130503

AS Assignment

Owner name: ELECTRO SCIENTIFIC INDUSTRIES, INC., OREGON

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION SERIAL NUMBER 11776904 PREVIOUSLY RECORDED ON REEL 030582 FRAME 0160. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNORS:GSI GROUP CORPORATION;GSI GROUP INC.;REEL/FRAME:056424/0287

Effective date: 20130503