TWI775106B - 雷射標記的印刷方法及具有雷射標記的矽晶圓的製造方法 - Google Patents
雷射標記的印刷方法及具有雷射標記的矽晶圓的製造方法 Download PDFInfo
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Abstract
本發明的課題在提案可降低殘留構成雷射標記的點的周緣的加工應變的雷射標記的印刷方法及雷射標記的矽晶圓的製造方法。
本發明的解決手段係在矽晶圓印刷具有複數點的雷射標記的方法,其特徵在於:各個上述複數點係使用紫外線區域波長的雷射光形成。
Description
本發明係關於雷射標記的印刷方法及雷射標記的矽晶圓的製造方法。
先前,作為半導體裝置的基板,廣泛的使用矽晶圓。該矽晶圓可如下獲得。即,首先將藉由柴可拉斯基(Czochralski,CZ)法等培養的單結晶矽錠裁切成塊,將塊的外周部研磨之後,切片。
接著,對藉由切片而得的矽晶圓,適當施以倒棱處理、粗研磨處理、平面研磨處理、兩頭研磨處理等的處理之一或複數處理。在施以該等處理的矽晶圓的正面或背面的外周部,有時藉由照射雷射光印刷用於管理或識別晶圓的識別符號(標記)。藉由雷射光印刷的標記(以下稱為「雷射標記」。),係以複數凹部(點)的集合所組成的文字或記號所構成,具有可以目視或照相機等識別的大小。先前,作為上述雷射光,使用具有紅外線區域的波長(參照例如,專利文獻1)。
藉由上述雷射光的照射,在點的周緣會形成環狀的隆起部。因此,對印刷上述雷射標記的矽晶圓的至少印刷雷射標記的區域(以下,亦稱為「雷射標記區域」。),施以蝕刻處理去除上述隆起部之後,對矽晶圓的表面進行研磨處理(參照例如,專利文獻2)。然後,對施以研磨處理的矽晶圓進行最終清洗,進行各種檢查滿足既定品質基準的作為產品出貨。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開平11-772號公報
[專利文獻2]日本特開2011-29355號公報
[發明所欲解決的課題]
然而近幾年,半導體裝置的細微化‧高積體化更加進展,對矽晶圓要求極高的平坦性。此外,關於裝置形成區域,亦年年向晶圓的徑方向外側擴大,而對晶圓外周部亦要求很高的平坦性。
如上所述,在點周緣形成的隆起部藉由蝕刻處理去除。但是本發明者的研究結果,發現即使如上所述去除隆起部,無法完全去除起因於雷射光照射的熱影響的點周緣的加工應變而殘留。然後,以如此之應變殘留的狀態對矽晶圓進行研磨處理,則晶圓表面無法均勻研磨,而有降低晶圓外周部的平坦度之虞。
本發明係有鑑於上述課題所完成,其目標係以提供可降低殘留構成雷射標記的點的周緣的加工應變的雷射標記的印刷方法及雷射標記的矽晶圓的製造方法。
[用於解決課題的手段]
解決上述課題的本發明的要點構成係如下所示。
[1]一種雷射標記的印刷方法,其係在矽晶圓印刷具有複數點的雷射標記的方法,其特徵在於:各個上述複數點係使用紫外線區域波長的雷射光形成。
[2]如上述[1]之雷射標記的印刷方法,其中各個上述複數點的形成,係藉由照射複數次雷射光而進行。
[3]如上述[2]之雷射標記的印刷方法,其中上述複數次雷射光照射的脈衝數為每1秒15000以上。
[4]一種雷射標記的矽晶圓的製造方法,其特徵在於:包含:
將以既定方法培養的單結晶矽錠切片而得的矽晶圓,以上述[1]~[3]任何一項之雷射標記的印刷方法印刷雷射標記的雷射標記印刷步驟;
對上述矽晶圓的至少印刷雷射標區域,施以蝕刻處理的蝕刻步驟;及
對上述蝕刻步驟後的上述矽晶圓的表面施以研磨處理的研磨步驟。
[5]如上述[4]之雷射標記的矽晶圓的製造方法,其中上述蝕刻步驟的蝕取範圍,以單面為1.5μm以上。
[6]如上述[4]或[5]之雷射標記的矽晶圓的製造方法,其中上述蝕刻步驟使用的藥液係酸或鹼藥液。
[發明的效果]
根據本發明可降低殘留在構成雷射標記的點周緣的加工應變。
(雷射標記的印刷方法)
以下參照圖面說明本發明的實施形態。本發明的雷射標記的印刷方法,係在矽晶圓印刷具有複數點的雷射標記的方法。在此,其特徵在於:各個上述複數點係使用紫外線區域波長的雷射光形成。
如上所述,本發明者的研討結果,發現即使藉由蝕刻處理因雷射光照射所形成的隆起部,無法完全去除點周緣的加工應變而殘留,而在之後的研磨處理,會降低晶圓外周部的平坦度。
本發明者,專心研究關於減低上述加工應變的途徑。如後述的實施例所示,使蝕刻處理的蝕取範圍非常大(例如,50μm)即可完全去除,點周緣的加工應變。但是,在現在的晶圓製造過程,在蝕刻處理的研磨範圍為數μm程度,故在生產成本方面並不理想。
因此,本發明者,專心研究即使不如上所述地將蝕刻處理的蝕取範圍弄得非常大,亦可減低點周緣的加工應變的途徑。結果想到,將各個構成雷射標記的複數點,使用紫外區域波長的雷射光形成。
即,在以專利文獻1為首的先前法,在構成雷射標記的點的形成,一般使用紅外線區域波長的雷射光。本發明者,研究點周緣的加工應變與雷射波長的關係。結果,發現如後述實施例所示,藉由將雷射波長變短可降低加工應變,特別是使用紫外區域波長的雷射,可大大地降低點周緣的加工應變,而完成本發明。以下,說明關於本發明的各構成。
印刷雷射標記的矽晶圓,可使用對以CZ法或浮動帶域(Floating Zone,FZ)法培養的單結晶矽錠,以習知的外周研磨處理、切片處理、倒棱處理、及粗研磨處理、平面研磨處理、兩頭研磨處理等的之一處理或複數處理而得。
上述單結晶矽錠的培養,適當地調整氧氣濃度或碳濃度、氮濃度等,而從培養的矽錠採取的矽晶圓具有所期望的特性。此外,關於導電性,亦可添加適當的摻雜物作成n型或p型。
矽晶圓的直徑,可例如為200mm,亦可為300mm以上(例如,300mm或450mm)。此外,矽晶圓的厚度,可按照規格作成適當的厚度(例如,700μm~1mm)。
如上所述,在本發明,關鍵在將各個構成雷射標記的複數點,使用紫外區域波長的雷射光形成。藉此降低因雷射光照射的熱影響,而可降低點周緣的加工應變。再者,在本發明,所謂「紫外區域的波長」,係意指355nm以下的波長。
雷射光源,可使用例如,氬雷射或準分子雷射、YAG雷射。其中,作為雷射標記用的光源,使用一般的YAG雷射為佳。
藉由1次雷射光的照射所形成的點的深度,並不依存於雷射光的輸出,雖依裝置,例如為2μm~10μm左右。因此,無法以1次的雷射光照射作成所期望深度的點時,亦可將雷射光照射複數次。
此時,上述複數次雷射光照射的脈衝數,每1秒以10000以上為佳,每1秒以15000以上為更佳。藉由使複數次雷射光照射的脈衝數為每1秒10000以上,可減低每1次脈衝雷射照射的能量,可更加減低點周緣的加工應變。此外,藉由使雷射光照射的脈衝數為每1秒15000以上,可大致完全去除點周緣的加工應變。
如上所述印刷雷射標記的矽晶圓,供於之後的蝕刻步驟及研磨步驟。藉由蝕刻步驟,雖可去除在雷射標記周緣的隆起,但與先前法相比由於降低了殘留在點周緣的加工應變,故可提升的矽晶圓外周部在研磨步驟後的平坦性。
(雷射標記的矽晶圓的製造方法)
接著,說明關於本發明的雷射標記的矽晶圓的製造方法說明。圖1係表示本發明的雷射標記的矽晶圓的製造方法的流程圖。如圖所示,本發明的特徵在於:包含:將以CZ法或FZ法等既定方法培養的單結晶矽錠切片,施以倒棱處理的矽晶圓,藉由上述本發明的雷射標記的印刷方法印刷雷射標記的雷射標記印刷步驟(步驟S1);對上述矽晶圓的至少印刷雷射標記區域,施以蝕刻處理的蝕刻步驟(步驟S2);及對上述蝕刻步驟後的上述矽晶圓的表面施以研磨處理的研磨步驟(步驟S3)。
首先,步驟S1的雷射標記印刷步驟,由於與上述本發明的雷射標記的印刷方法進行的步驟相同,省略說明,惟藉由將各個複數點以紫外區域波長的雷射光形成,可減低殘留在點周緣的加工應變。
在上述雷射標記印刷步驟之後,在步驟S2,對矽晶圓的至少印刷雷射標記區域,施以蝕刻處理 (蝕刻步驟)。該蝕刻步驟,藉由步驟S1的雷射光照射,去除在點的周緣所形成的隆起部,同時藉由粗研磨處理去除在矽晶圓產生的應變。
作為上述蝕刻步驟的一例,可舉出將印刷雷射標記之後的矽晶圓,保持浸在填充蝕刻液的蝕刻槽,邊將晶圓旋轉邊蝕刻的方法。
作為蝕刻液,可使用酸性或鹼性的蝕刻液,使用鹼性的蝕刻液為佳。酸性的蝕刻液,可使用由硝酸或氟酸所組成的蝕刻液。此外,作為鹼性的蝕刻液,使用由氫氧化鈉或氫氧化鉀水溶液組成的蝕刻液為佳。藉由該蝕刻步驟,去除構成雷射標記的點周緣的隆起部,同時亦可藉由粗研磨處理去除發生在矽晶圓的應變。
上述蝕刻處理的蝕取範圍,以單面以0.5μm以上為佳,以1.5μm以上為更佳。如後述的實施例所示,藉由使蝕刻處理的蝕取範圍為單面1.5μm,可大致完全去除加工應變。
另一方面,蝕刻的蝕取範圍的上限,在去除上述點周緣的加工應變及以粗研磨處理去除應變方面並無特別限定,從製造成本以15μm以下為佳。
上述蝕刻步驟之後,在步驟S3,對蝕刻步驟後的矽晶圓的表面施以研磨處理(研磨步驟)。在本研磨步驟,使用具有磨粒的研磨漿料研磨蝕刻後晶圓的兩面。
本研磨步驟,係將矽晶圓嵌入載具,將晶圓以黏貼研磨布的上定盤及下定盤包夾,在上下定盤與晶圓之間,例如灌入膠態二氧化矽等的漿料,使上下定盤對載具相對旋轉,對矽晶圓的兩面施以鏡面研磨處理。藉此,可減低晶圓表面的凹凸得到平坦度高的晶圓。
具體而言,作為研磨漿料,可使用作為研磨磨粒含有膠態二氧化矽的鹼性漿料。
上述研磨步驟之後,將矽晶圓的至少單面,做各單面完成研磨的單面完成研磨。在該完成研磨,包含僅研磨單面及研磨兩面的兩者。研磨兩面時,在進行一方的表面研磨之後進行另一方的表面研磨。
之後,在完成研磨處理之後,對施以研磨處理的矽晶圓做清洗。具體而言,例如以氨水、過氧化氫及水的混合物的SC-1清洗液,或鹽酸、過氧化氫水及水的混合物的SC-2清洗液,去除晶圓表面的粒子或有機物、金屬等。
最後,檢查已清洗的矽晶圓的平坦度、晶圓表面的LPD的數量、損傷、晶圓表面的污染等。在該檢查只有滿足既定品質的矽晶圓作為產品發貨。
如此,可減低構成雷射標記的點周緣的加工應變,而可製造外周部的平坦度高的雷射標記的矽晶圓。
[實施例]
以下,說明關於本發明的實施例,惟本發明並非限定於實施例。
<點周緣的加工應變與雷射波長的關係>
(發明例1~3)
遵照圖1所示流程圖,製作本發明的雷射標記的矽晶圓。首先,在矽晶圓的外周部印刷雷射標記(雷射標記印刷步驟)。具體而言,將CZ法培養的直徑300mm的單結晶切成矽錠,將外周研磨之後,切片。對所得矽晶圓,施以倒棱處理、粗研磨之後,在矽晶圓的背面外周部,印刷以深度55μm的複數點所構成的雷射標記。此時,作為雷射光使用紫外區域的波長(355nm)。此外,各點係藉由照射18次雷射光所形成,雷射光照射的脈衝數為每1秒15000。
如上所述,對在矽晶圓背面外周部印刷雷射標記的矽晶圓施以蝕刻處理(蝕刻步驟)。具體而言,作為蝕刻液使用氫氧化鉀水溶液,蝕取範圍為單面1.5μm(發明例1)、12.5μm(發明例2)及50μm(發明例3)。
之後,對施以蝕刻處理的矽晶圓,施以兩面研磨處理(研磨步驟)。具體而言,係將施以蝕刻處理的矽晶圓嵌入載具,將晶圓,以黏貼研磨布的上定盤及下定盤包夾,在上下定盤與晶圓之間,灌入含有膠態二氧化矽的鹼性研磨漿料,使上下定盤及載具互相向相反方向旋轉,對矽晶圓的兩面施以鏡面研磨處理。在該兩面研磨處理的蝕取範圍,以單面約為5.0μm。
接著,對施以上述研磨處理的矽晶圓做完成研磨之後,清洗,得到本發明的雷射標記的矽晶圓。對所得雷射標記的矽晶圓的雷射標記部分,使用理學股份有公司製XRT裝置,測定點周緣的加工應變。將所得XRT影像示於圖2。
(比較例1)
以與發明例1同樣地製作雷射標記的矽晶圓。惟,印刷雷射標記時所使用的雷射光,使用具有紅外線區域(波長1064nm)的波長的。其他的條件,與發明例1全部相同。將所得XRT影像示於圖2。
(比較例2)
以與發明例2同樣地製作雷射標記的矽晶圓。惟,印刷雷射標記時所使用的雷射光,使用具有紅外線區域(波長1064nm)的波長的。其他的條件,與發明例2全部相同。將所得XRT影像示於圖2。
(比較例3)
以與發明例3同樣地製作雷射標記的矽晶圓。惟,印刷雷射標記時所使用的雷射光使用紅外線區域(波長1064nm)的波長。其他的條件,與發明例3全部相同。將所得XRT影像示於圖2。
(比較例4)
以與發明例1同樣地製作雷射標記的矽晶圓。惟,印刷雷射標記時所使用的雷射光使用可見光區域(波長532nm)的波長。其他的條件,與發明例1全部相同。將所得XRT影像示於圖2。
(比較例5)
以與發明例2同樣地製作雷射標記的矽晶圓。惟,印刷雷射標記時所使用的雷射光使用可見光區域(波長532nm)的波長。其他的條件,與發明例2全部相同。將所得XRT影像示於圖2。
(比較例6)
以與發明例3同樣地製作雷射標記的矽晶圓。惟,印刷雷射標記時所使用的雷射光使用可見光區域(波長532nm)的波長。其他的條件,與發明例3全部相同。將所得XRT影像示於圖2。
圖2係表示雷射光的波長及蝕刻的蝕取範圍,與殘留在點周緣的加工應變的關係,顯示有在周緣有殘留加工應變的點,在周緣沒有殘留加工應變的點則並未顯示。此外,在各影像的下方,記載有殘留加工應變的點數對全體點數的比例。
由圖2,可知在蝕刻處理的蝕取範圍為單面1.5μm及12.5μm,雷射光的波長為1064nm及532nm時(比較例1、2、5及6),在多數的點周緣有殘留加工應變。另一方面,可知雷射光的波長為355nm時,關於所有的點,去除了周緣的加工應變。再者,在蝕刻處理的蝕取範圍,以單面50μm時,關於所有雷射光波長,有去除點周緣的加工應變,但由於現行的晶圓製造過程的蝕取範圍為數μm程度,故50μm的蝕取範圍在製造成本方面並不理想。
<雷射光的照射脈衝數與殘留在點周緣的加工應變的關係>
(發明例4)
以與發明例1同樣地製作雷射標記的矽晶圓。惟,形成複數點時的雷射光照射脈衝數為10000。其他的條件,與發明例1全部相同。將所得XRT影像示於圖3。
(發明例5)
以與發明例2同樣地製作雷射標記的矽晶圓。惟,形成複數點時的雷射光照射脈衝數為10000。其他的條件,與發明例2全部相同。將所得XRT影像示於圖3。
(發明例6)
以與發明例1同樣地製作雷射標記的矽晶圓。惟,形成複數點時的雷射光照射脈衝數為20000。其他的條件,與發明例1全部相同。將所得XRT影像示於圖3。
(發明例7)
以與發明例2同樣地製作雷射標記的矽晶圓。惟,形成複數點時的雷射光照射脈衝數為20000。其他的條件,與發明例2全部相同。將所得XRT影像示於圖3。
(發明例8)
以與發明例1同樣地製作雷射標記的矽晶圓。惟,形成複數點時的雷射光照射脈衝數為25000。其他的條件,與發明例1全部相同。將所得XRT影像示於圖3。
(發明例9)
以與發明例2同樣地製作雷射標記的矽晶圓。惟,形成複數點時的雷射光照射脈衝數為25000。其他的條件,與發明例2全部相同。將所得XRT影像示於圖3。
圖3係表示雷射光照射在每1秒的脈衝數與殘留在點周緣的加工應變的關係。圖3亦顯示圖2所示發明例1及發明例2的XRT影像。由圖3可知,每1秒的脈衝數為10000時,雖然關於多數的點去除了加工應變,但關於一部分的點有殘留加工應變。另一方面,可知雷射光照射的每1秒的脈衝數為15000、20000及25000時,關於所有的點去除了加工應變。
[產業上的可利性]
根據本發明,由於可減低殘留在構成雷射標記的點周緣的加工應變,而有用於半導體製造業。
無。
[圖1]係本發明的雷射標記的矽晶圓的製造方法的流程圖。
[圖2]係表示雷射光的波長及蝕刻的蝕取範圍、殘留在點周緣的加工應變的關係圖。
[圖3]係表示雷射光照射在每1秒的脈衝數與殘留在點周緣的加工應變的關係圖。
無。
Claims (4)
- 一種雷射標記的印刷方法,其係在矽晶圓印刷具有複數點的雷射標記的方法,其特徵在於:各個上述複數點係使用紫外線區域波長的雷射光形成,其中各個上述複數點的形成,係藉由照射複數次雷射光而進行,其中上述複數次雷射光照射的脈衝數為每1秒15000以上。
- 一種雷射標記的矽晶圓的製造方法,其特徵在於:包含:將以既定方法培養的單結晶矽錠切片並施以倒棱處理的矽晶圓,以如上述請求項1之雷射標記的印刷方法印刷雷射標記的雷射標記印刷步驟;對上述矽晶圓的至少印刷雷射標記區域,施以蝕刻處理的蝕刻步驟;及對上述蝕刻步驟後的上述矽晶圓的表面施以研磨處理的研磨步驟。
- 如請求項2之雷射標記的矽晶圓的製造方法,其中上述蝕刻步驟的蝕取範圍,以單面為1.5μm以上。
- 如請求項2或3之雷射標記的矽晶圓的製造方法,其中上述蝕刻步驟使用的藥液係酸或鹼藥液。
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US6962860B2 (en) * | 2001-11-09 | 2005-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US20060000814A1 (en) * | 2004-06-30 | 2006-01-05 | Bo Gu | Laser-based method and system for processing targeted surface material and article produced thereby |
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JP2924861B2 (ja) | 1997-06-11 | 1999-07-26 | 日本電気株式会社 | 半導体ウエハ用レーザマーキング装置およびその方法 |
JP2000263840A (ja) * | 1999-03-11 | 2000-09-26 | Hitachi Ltd | レーザ印字方法及びレーザ印字装置 |
JP4342631B2 (ja) * | 1999-03-31 | 2009-10-14 | 株式会社Sumco | ハードレーザマーキングウェーハの製造方法 |
US7157038B2 (en) * | 2000-09-20 | 2007-01-02 | Electro Scientific Industries, Inc. | Ultraviolet laser ablative patterning of microstructures in semiconductors |
KR100445974B1 (ko) * | 2001-12-01 | 2004-08-25 | 주식회사 이오테크닉스 | 칩 스케일 마커의 마킹 위치 보정 방법 및 그 장치 |
JP2011029355A (ja) * | 2009-07-24 | 2011-02-10 | Sumco Corp | レーザマーク付き半導体ウェーハの製造方法 |
JP2011187706A (ja) * | 2010-03-09 | 2011-09-22 | Sumco Corp | シリコンウェーハの製造方法 |
JP5905899B2 (ja) * | 2010-11-30 | 2016-04-20 | コーニング インコーポレイテッド | ガラスに孔の高密度アレイを形成する方法 |
US20170236954A1 (en) * | 2011-08-05 | 2017-08-17 | Beamreach | High efficiency solar cell structures and manufacturing methods |
JP2013093493A (ja) * | 2011-10-27 | 2013-05-16 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
JP2014036134A (ja) * | 2012-08-09 | 2014-02-24 | Disco Abrasive Syst Ltd | デバイスの加工方法 |
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US20060000814A1 (en) * | 2004-06-30 | 2006-01-05 | Bo Gu | Laser-based method and system for processing targeted surface material and article produced thereby |
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US20220331906A1 (en) | 2022-10-20 |
WO2021024674A1 (ja) | 2021-02-11 |
JP7205413B2 (ja) | 2023-01-17 |
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