US20040104117A1 - Electrolyte solution for manufacturing electrolytic copper foil and electrolytic copper foil manufacturing method using the same - Google Patents
Electrolyte solution for manufacturing electrolytic copper foil and electrolytic copper foil manufacturing method using the same Download PDFInfo
- Publication number
- US20040104117A1 US20040104117A1 US10/713,795 US71379503A US2004104117A1 US 20040104117 A1 US20040104117 A1 US 20040104117A1 US 71379503 A US71379503 A US 71379503A US 2004104117 A1 US2004104117 A1 US 2004104117A1
- Authority
- US
- United States
- Prior art keywords
- copper foil
- electrolyte solution
- electrolytic copper
- thioalkan
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 239000011889 copper foil Substances 0.000 title claims abstract description 95
- 239000008151 electrolyte solution Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- -1 disulfur compound Chemical class 0.000 claims abstract description 24
- 239000004094 surface-active agent Substances 0.000 claims abstract description 22
- 150000003464 sulfur compounds Chemical class 0.000 claims abstract description 20
- 108010010803 Gelatin Proteins 0.000 claims abstract description 13
- 229920000159 gelatin Polymers 0.000 claims abstract description 13
- 239000008273 gelatin Substances 0.000 claims abstract description 13
- 235000019322 gelatine Nutrition 0.000 claims abstract description 13
- 235000011852 gelatine desserts Nutrition 0.000 claims abstract description 13
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 9
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 8
- 150000003460 sulfonic acids Chemical class 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 60
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 22
- 239000000654 additive Substances 0.000 claims description 10
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 9
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 9
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 claims description 8
- 150000003585 thioureas Chemical class 0.000 claims description 7
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 6
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 238000005868 electrolysis reaction Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 8
- 238000005498 polishing Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 51
- 239000002202 Polyethylene glycol Substances 0.000 description 18
- 229920001223 polyethylene glycol Polymers 0.000 description 18
- 238000004381 surface treatment Methods 0.000 description 13
- 230000003746 surface roughness Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 229920001451 polypropylene glycol Polymers 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910001431 copper ion Inorganic materials 0.000 description 7
- 229920001281 polyalkylene Polymers 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 159000000000 sodium salts Chemical class 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- WRBSVISDQAINGQ-UHFFFAOYSA-N 3-(dimethylcarbamothioylsulfanyl)propane-1-sulfonic acid Chemical compound CN(C)C(=S)SCCCS(O)(=O)=O WRBSVISDQAINGQ-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 229910000457 iridium oxide Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 0 *N(*)C(=S)SC Chemical compound *N(*)C(=S)SC 0.000 description 1
- LRRXBESJWNYMQY-UHFFFAOYSA-L CCCCSC(=S)N(C)C.O=S(=O)(CCCSSCCCS(=O)(=O)O[Na])O[Na] Chemical compound CCCCSC(=S)N(C)C.O=S(=O)(CCCSSCCCS(=O)(=O)O[Na])O[Na] LRRXBESJWNYMQY-UHFFFAOYSA-L 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical class [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- PDQAZBWRQCGBEV-UHFFFAOYSA-N Ethylenethiourea Chemical compound S=C1NCCN1 PDQAZBWRQCGBEV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- DKVNPHBNOWQYFE-UHFFFAOYSA-N carbamodithioic acid Chemical compound NC(S)=S DKVNPHBNOWQYFE-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- GTLDTDOJJJZVBW-UHFFFAOYSA-N zinc cyanide Chemical compound [Zn+2].N#[C-].N#[C-] GTLDTDOJJJZVBW-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
- C25D7/0635—In radial cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
Definitions
- the present invention generally relates to an electrolyte solution used to manufacture an electrolytic copper foil for a printed circuit and an electrolytic copper foil for an electrode collector of a secondary battery, the electrolytic copper foil using the same, and an electrolytic copper foil manufacturing method thereof.
- a printed circuit board using the electrolytic copper foil is widely used as a precise control circuit of various electric, electronic communication apparatuses such as radios, TVs, computers, telephone exchanges, wireless transceivers, etc. Recently, as a degree of integration of the printed circuit board increases, circuits of the board get minute and multilayered. Particularly, the electrolytic copper foil is highly demanded in terms of COF (Chip On Flex) and TAB (Tape Automatic Bonding) aspects, and is broadly used as an electrode collector of a secondary battery by improving its physical properties.
- the electrolytic copper foil is created by electrolytic methods, and is manufactured from a cylinder-shaped cathode (also, called a drum) consisting of titanium, an anode consisting of a lead alloy keeping certain intervals or titanium covered by an iridium oxide, and an electrolytic cell including an electrolyte solution and current power.
- the electrolyte solution is composed of sulfuric acid and/or a copper sulfate.
- the copper foil obtained from the thin film process can pass through additional surface treatment processes including a roughness treatment process (also, called a nodule treatment process), a nonproliferation process to prevent the copper ion from being proliferated, an anticorrosive process to prevent oxidation from outside, a chemical adhesive force improving process to complement an adhesive force with the insulating substrate, and so on.
- a roughness treatment process also, called a nodule treatment process
- an anticorrosive process to prevent oxidation from outside
- a chemical adhesive force improving process to complement an adhesive force with the insulating substrate, and so on.
- the copper foil is supplied to a PCB (Printed Circuit Board) process manufacturer while being adhered (laminated) to the insulating substrate after the surface treatment process.
- the copper foil is supplied to a secondary battery manufacturer via the anticorrosive process only.
- the surface of the copper foil contacted with the insulating substrate should have a small roughness.
- the copper foil gets stress by thermal expansion or heat-shrink and moreover, the copper foil is laminated in multilayer way, it may have scratches due to friction with a neighboring copper foil. More seriously, the copper foil can be exfoliated from the insulating substrate or have circuit damage, or a PCB may get bent or distorted. To protect the copper foil from these problems, it is necessary to have a proper elongation without suddenly deteriorating mechanical intensity at high temperature.
- the electrolytic copper foil When the electrolytic copper foil is used as the collector for the secondary battery, electrode materials should cover both sides of the copper foil. In this case, if both sides of the electrolytic copper foil have a different roughness, battery characteristics differ from each side. Therefore, it is required to have the same or a similar roughness on both sides of the electrolytic copper foil. Furthermore, to reduce weight and a manufacturing cost of the battery and increase energy density of the battery, the electrolytic copper foil should be manufactured in thin type. Even though the copper foil is thin, it is necessary to have sufficient mechanical intensity and an elongation at high temperature, without being bent in a future treatment process.
- the prior art has suggested a method of making an electrolytic copper foil by adding various organic additives to an electrolyte solution.
- the U.S. Pat. No. 5,431,803 has been suggested to lower a surface roughness, providing a method of manufacturing an electrolytic copper foil that maintains concentration of a chlorine ion less than 1 mg in a 1-liter electrolyte solution.
- 5,431,803 has 61 kgf/mm 2 to 84 kgf/m 2 of mechanical intensity at room temperature as well as 17 kgf/mm 2 to 25 kgf/mm 2 at 180° C., and has about 6 ⁇ m of the maximum value of the surface roughness: Rmax for a surface treatment.
- Rmax the maximum value of the surface roughness
- the present invention provides the electrolyte solution, the electrolytic copper foil produced by using the electrolyte solution, and an electrolytic copper foil manufacturing method thereof.
- an electrolyte solution containing at least selected one of sulfuric acid and copper sulfate used to manufacture an electrolytic copper foil by electrolysis the electrolyte solution for manufacturing the electrolytic copper foil, based on the 1-liter electrolyte solution, comprising: 0.5 to 40 mg of at least one sulfur compound selected from a disulfur compound, dialkylamino- T-oxomethyl- thioalkan sulfonic acid, and thioalkan sulfonic acid salt; 1 to 1000 mg of at least more than one kind of an organic compound selected from a group consisting of a poly aklylene glycol-type surfactant and low molecular gelatin; and 0.1 to 80 mg of chlorine ion added.
- a solution comprising i) sulfuric acid and copper salt rather than copper sulfate, or ii) copper sulfate and acid rather than sulfuric acid may be also used as the electrolyte.
- the organic compound comprising low molecular gelatin without polyalkylene gulycol type surfactant may be also used as the organic compound.
- a process of manufacturing an electrolytic copper foil for a printed circuit is divided into a thin film process and a surface treatment process.
- the thin film process is generally performed by using an electroforming cell.
- an electrolytic cell Within an electrolytic cell, a semi-cylinder type anode and a cylinder-type rotating cathode are located at certain intervals, and the electrolyte solution is consecutively supplied between the anode and the cathode.
- a copper ion of the electrolyte solution is restored to metal having predetermined thickness from the cathode.
- a copper foil (undisposed) that does not pass through a future treatment process is exfoliated from the surface of the cathode.
- a lead alloy is widely used for the anode, but recently, intervals are changed by corrosion of a lead oxide. Therefore, titanium covering an iridium oxide is more used.
- the cathode is used by plating iron with chromium, however recently, stainless materials are covered with titanium to lengthen the span of life.
- an additional treatment process of passing the undisposed copper foil through a processor can be performed.
- This treatment process includes a roughness treatment process to improve an adhesive force when laminated on an insulating substrate, a nonproliferation process to prevent a copper ion from being proliferated, and an anticorrosive process to prevent oxidation during storage, transportation or a lamination forming process of the copper foil and the insulating substrate.
- a roughness treatment process to improve an adhesive force when laminated on an insulating substrate
- a nonproliferation process to prevent a copper ion from being proliferated
- an anticorrosive process to prevent oxidation during storage, transportation or a lamination forming process of the copper foil and the insulating substrate.
- the electrolyte solution supplied between the anode and the cathode is a copper sulfate solution, and its blending based on 1 liter is as follows:
- Copper concentration is between 50 g and 110 g, and desirably, between 60 g and 100 g.
- Sulfuric acid concentration is between 80 g and 200 g, and desirably, between 90 g and 120 g.
- Temperature of the electrolyte solution is between 40° C. and 80° C.
- Current density is between 400A/cm 2 and 10000A/dm 2 , and desirably, between 50A/dm 2 and 85A/dm 2 . If the copper concentration is less than 50 g, the surface of an electrodeposited copper foil is rough and powder is formed, lowering productivity. However, if more than 110 g, the electrolyte solution is crystallized, deteriorating working efficiency.
- the sulfuric acid concentration is less than 80 g, an electrolytic voltage rises, resulting in an increase of production cost. Also, temperature of the electrolyte solution rises, causing deterioration of mechanical intensity of the copper foil. If the sulfuric acid concentration is more than 200 g, the electrolyte solution is highly apt to be corrosive even though the electrolytic voltage lowers, thereby quickly corroding an electrode electrolyzing the copper foil.
- the electrolyte solution contains a sulfur compound having 0.5 to 40 mg of concentration and at least more than one kind of an organic compound selected from a group consisting of a poly alkylene glycol-type surfactant having 1 to 1000 mg of concentration and low molecular gelatin as additives.
- a chlorine ion having a range of 0.1 mg to 80 mg is added.
- a nitrogen compound for example, IM(2-imidazolidiniethionie) is used within a range of 0.1 mg to 8 mg.
- IM(2-imidazolidiniethionie) is used within a range of 0.1 mg to 8 mg.
- the poly alkylene glycol-type surfactant it is available to use poly ethylene-type, poly propylene-type, and poly butylenes-type surfactants.
- poly ethylene glycol can be representative of the poly ethylene-type surfactant.
- a disulfur compound and dialkylamino- T-oxomethyl- thioalkan sulfonic acid or thioalkan sulfonic acid salt are included in the sulfur compound.
- the disulfur compound includes SPS (Bis-(3-sulfopropyl)-disulfide, disodium salt)), and dialkylamino- T-oxomethyl- thioalkan sulfonic acid or salt thereof can contain dithiocarbamic acid or salt thereof, and DPS (N,N-Dimethyldithiocarbamic acid (3-sulfopropyl) ester, sodium salt) is representative.
- a formula of the dialkylamino- T-oxomethyl- thioalkan sulfonic acid or the salt thereof is shown in a chemical formula 1, and a formula of the DPS as a representative example is shown in a chemical formula 2, then a formula of the SPS is shown in a chemical formula 3.
- R in the chemical formula 1 means an alkyl group (carbon atom 1 ⁇ 6)
- n is 2 ⁇ 3 (ethane, propane)
- X means hydrogen atom or alkali metal atom.
- the roles of the sulfur compound and the surfactant are very important, since these compounds give direct influence on a surface roughness and tensile strength.
- the sulfur compound Compared to a general electrolytic copper foil added with glue or gelatin, the sulfur compound generally has a small size of grains and functions as a grain refiner or a brightener.
- the added surfactant functions as a carrier or an electrodeposition leveler lowering a surface roughness of a mat surface of the electrolytic copper foil, influencing electroposition.
- the surfactant is absorbed into a protruded part of an electrode surface as carrying the sulfur compound, which is a brightener, to a cathode surface, and suppresses growth of the protruded part, thereby interrupting the growth firstly.
- the sulfur compound which is the grain refiner, firstly functions in a minute valley part of an electroposition surface, and enables a copper ion to be restored and grow up in this part first of all, thereby controlling a roughness of the electrodeposition surface.
- the thiourea derivative, the nitrogen compound used in the present invention suppresses crystal growth of copper at room temperature or high temperature by eutectoid-processing nitrogen on an electrodeposition layer, and also restrains strength deterioration.
- the nitrogen compound, the thiourea derivative when added, it is possible to prevent the strength deterioration, which occurs otherwise. So, a defective proportion caused when dealing with the electrolytic copper foil or manufacturing the printed circuit can be reduced.
- the strength can be changed by controlling an amount of the additives, thereby adjusting physical properties of the electrolytic copper foil.
- the above undisposed copper foil can pass through additional surface treatment processes including a roughness treatment process (also, called a nodule treatment process), a nonproliferation process to prevent a copper ion from being proliferated, and an anticorrosive process to prevent oxidation from outside. If passing through the surface treatment process, the copper foil is made for a low profile printed circuit, however, if passing through the anticorrosive process only, the copper foil is for a secondary battery.
- a roughness treatment process also, called a nodule treatment process
- a nonproliferation process to prevent a copper ion from being proliferated
- an anticorrosive process to prevent oxidation from outside.
- the roughness treatment process consists of two steps or three steps.
- a core of minute powder is made, and the powder is coupled with the copper foil in a second step because the powder does not have an adhesive force with the copper foil.
- a minute protrusion is given to the coupled powder again.
- the first step is as follows. Based on a 1-liter electrolyte solution, copper concentration is between 10 g and 40 g, and desirably, between 15 g and 25 g. Sulfuric acid concentration is between 40 g and 150 g, and desirably between 60 g and 100 g, and temperature of the electrolyte solution is between 20° C. and 40° C.
- Current density is between 20 A/dm 2 and 100 A/dm 2 , and desirably, between 40 A/dm 2 and 80 A/dm 2 .
- the second step is as follows. Copper concentration is between 50 g and 110 g, and desirably, between 55 g and 100 g. Sulfuric acid concentration is between 80 g and 200 g, and desirably, between 90 g and 120 g. Temperature of the electrolyte solution is between 40° C. and 80° C. Current density is between 20 A/dm 2 and 100 A/dm 2 , and desirably, between 40 A/dm 2 and 80 A/dm 2 .
- the nonproliferation process is as follows.
- a barrier layer is formed with various single metal such as zinc, nickel, iron, cobalt, molybdenum, tungsten, tin, indium, and chrome, or with 2 or 3 kinds of alloys.
- the anticorrosive process performs chromate passivation with chromic acid, sodium dichromate, potassium dichromate, chromic anhydride, etc.
- a process for increasing chemical cohesion is executed.
- a chemical adhesive force improving process can be carried out to complement an adhesive force with the insulating substrate.
- adhesion accelerators such as a silane coupling agent (RSiX 3 ), silicon peroxygen (R 4 ⁇ n Si(OOR′) n ), a chromium-based adhesion accelerator ((RCO 2 H 3 OHCrOHCrHOH 2 ) 2 OH), an organic titanium based adhesion accelerator ((C 4 H 9 CHC 2 H 5 CH 2 O) 4 Ti), an organic phosphate based adhesion accelerator (RO 2 P(OH) 2 ), and others.
- silane coupling agent RSiX 3
- silicon peroxygen R 4 ⁇ n Si(OOR′) n
- a chromium-based adhesion accelerator (RCO 2 H 3 OHCrOHCrHOH 2 ) 2 OH)
- an organic titanium based adhesion accelerator (C 4 H 9 CHC 2 H 5 CH 2 O) 4 Ti)
- a symbol ‘g/L’ means a content of a corresponding material based on a 1-liter electrolyte solution.
- the electrolyte solution having blending like described in Table 1 is prepared. Copper concentration of the electrolyte solution is 80 g/L, sulfuric acid concentration is 90 g/L, and temperature of the electrolyte solution is 45° C. Additives like described in Table 1 have been added. Current density was electrodeposited in 60 A/dm 2 , and chlorine ion was maintained in 25 mg/L.
- SPS Bis-(3-sulfopropyl)-disulfide, disodium salt
- PEG Poly Ethylene Glycol
- SPS Bis-(3-sulfopropyl)-disulfide, disodium salt
- PEG Poly Ethylene Glycol
- an Rz value tended to exceed 2.0 ⁇ m by an increase of a surface roughness of a rough surface in a range of exceeding 40 mg/L.
- the surface roughness did not lower, rather the roughness increased as lowering an elongation.
- the poly ethylene glycol-type surfactant it was possible to confirm a function of lowering the surface roughness of the rough surface within a range of 1 mg/L to 1000 mg/L. More desirably, a desirable surface roughness could be obtained within a range of 1 mg/L to 300 mg/L. However, in this case, it was required to control using current density in higher or lower way according to its amount.
- a surface treatment process was carried out for the undisposed copper foil in accordance with the embodiments 1 to 7.
- 110 g/L of sodium cyanide, 60 g/L of sodium hydroxide, 90 g/L of copper cyanide, and 5.3 g/L of zinc cyanide have been electrodeposited with pH 11.0 to 11.5 at 50° C., having 5 A/dm 2 of current density for 10 seconds.
- 10 g/L of sodium dichromate has been measured with pH 4.5, having 0.5 A/dm 2 of current density for 2 seconds.
- composition of the electrolyte solution and the chlorine ion concentration are the same as the above embodiments.
- 2 mg/L of low molecular gelatin less than 6000 molecular weight has been added as an additive.
- 1 mg/L of TU (thiourea) has been added with 2 mg/L of low molecular gelatin less than 6000 molecular weight.
- 50 mg/L and 30 mg/L of SPS and PEG, respectively have been added.
- Table 2 shows the results of comparing physical properties of the copper foil tentatively manufactured through the embodiments and the compared examples under the condition suggested in Table 1.
- a roughness (Rz) of a rough surface is controlled less than 2.0 by the sulfur compound.
- Rz a roughness of a drum surface and change strength
- DPS N-Dimethyldithiocarbamic acid (3-sulfopropyl) ester, sodium salt
- SPS Bis-(3-sulfopropyl)-disulfide, disodium salt
- the electrolytic copper foil manufactured in the embodiments in accordance with the present invention has a surface roughness Rz value of a rough surface within a range of 2.0 ⁇ m in a thin film state. It is also confirmed that tensile strength at room temperature is not rapidly changed even at high temperature (180° C.) as well.
- An electrolytic copper foil in accordance with the present invention has a roughness Rz value of a rough surface (mat surface) with a range of less than 2.0 ⁇ m, if undisposed. However, if the copper foil passes through a surface treatment process, it has a roughness Rz value of a rough surface (mat surface) within a range of 1.0 ⁇ 3.5 ⁇ m. Therefore, the electrolytic copper foil in accordance with the present invention has a relatively lower roughness on the rough surface, and both sides of the electrolytic copper foil have a similar roughness.
- An electrolytic copper foil manufactured in prior art has a problem of rapidly causing strength deterioration at high temperature (180° C.), though good strength is maintained at room temperature.
- the electrolytic copper foil in accordance with the present invention does not show any sudden strength change even at high temperature. Accordingly, the electrolytic copper foil in accordance with the present invention is appropriate for a minute and highly integrated PCB circuit.
- the electrolytic copper foil in accordance with the present invention prevents tensile strength from suddenly deteriorating owing to a temperature rise, having excellent elongation characteristics at room temperature and high temperature. Thus, it would not get bent or distorted in a future treatment process nor generate a short circuit.
- the electrolytic copper foil in accordance with the present invention is proper to be used as the collector for the secondary battery or a printed circuit board.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cell Electrode Carriers And Collectors (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrolytic Production Of Metals (AREA)
Applications Claiming Priority (2)
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KR20020070802 | 2002-11-14 | ||
KR2002-70802 | 2002-11-14 |
Publications (1)
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US20040104117A1 true US20040104117A1 (en) | 2004-06-03 |
Family
ID=29578347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/713,795 Abandoned US20040104117A1 (en) | 2002-11-14 | 2003-11-13 | Electrolyte solution for manufacturing electrolytic copper foil and electrolytic copper foil manufacturing method using the same |
Country Status (6)
Country | Link |
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US (1) | US20040104117A1 (ko) |
JP (1) | JP2004162172A (ko) |
KR (1) | KR100389061B1 (ko) |
CN (1) | CN1263899C (ko) |
CA (1) | CA2448892A1 (ko) |
TW (1) | TWI245082B (ko) |
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Cited By (26)
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US20100038115A1 (en) * | 2005-03-31 | 2010-02-18 | Mitsui Mining & Smelting Co., Ltd | Electrodeposited copper foil, its manufacturing method, surface-treated electrodeposited copper foil using the electrodeposited copper foil, and copper-clad laminate and printed wiring board using the surface-treated electrodeposited copper foil |
US8722199B2 (en) | 2005-03-31 | 2014-05-13 | Mitsui Mining & Smelting Co., Ltd. | Electrodeposited copper foil, its manufacturing method, surface-treated electrodeposited copper foil using the electrodeposited copper foil, and copper-clad laminate and printed wiring board using the surface-treated electrodeposited copper foil |
US7575666B2 (en) * | 2006-04-05 | 2009-08-18 | James Watkowski | Process for electrolytically plating copper |
US20070235343A1 (en) * | 2006-04-05 | 2007-10-11 | James Watkowski | Process for electrolytically plating copper |
US8419920B2 (en) | 2006-10-03 | 2013-04-16 | Mitsui Mining & Smelting Co., Ltd. | Method of preparing electrolytic copper solution acidified with sulfuric acid, sulfuric-acid-acidified electrolytic copper solution prepared by the preparation method, and electrodeposited copper film |
WO2008041706A1 (fr) | 2006-10-03 | 2008-04-10 | Mitsui Mining & Smelting Co., Ltd. | procÉdÉ de prÉparation d'une solution de cuivre Électrolytique acidifiÉe au moyen d'acide sulfurique, solution de cuivre Électrolytique acidifiÉe au moyen d'acide sulfurique prÉparÉe par le procÉdÉ de prÉparation et film de cuivre Éle |
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US20100089758A1 (en) * | 2006-10-03 | 2010-04-15 | Mitsui Mining & Smelting Co., Ltd. | Method of preparing electrolytic copper solution acidified with sulfuric acid, sulfuric-acid-acidified electrolytic copper solution prepared by the preparation method, and electrodeposited copper film |
EP2072642A4 (en) * | 2006-10-03 | 2011-11-30 | Mitsui Mining & Smelting Co | PROCESS FOR THE PREPARATION OF ACIDIFIED ELECTROLYTIC COPPER SOLUTION USING SULFURIC ACID, ACIDIFIED ELECTROLYTIC COPPER SOLUTION USING SULFURIC ACID PREPARED BY THE PREPARATION PROCESS, AND COPPER FILM |
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US9457541B2 (en) | 2010-07-15 | 2016-10-04 | Ls Mtron Ltd. | Copper foil for current collector of lithium secondary battery with improved wrinkle characteristics |
US10283778B2 (en) | 2010-07-15 | 2019-05-07 | Kcf Technologies Co., Ltd. | Copper foil for current collector of lithium secondary battery with improved wrinkle characteristics |
US9966608B2 (en) * | 2011-06-30 | 2018-05-08 | Furukawa Electric Co., Ltd. | Electrolytic copper foil, method of producing electrolytic copper foil, lithium ion secondary cell using electrolytic copper foil as collector |
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EP2568063A1 (en) * | 2011-09-09 | 2013-03-13 | Rohm and Haas Electronic Materials LLC | Low internal stress copper electroplating method |
US9493886B2 (en) | 2011-09-09 | 2016-11-15 | Rohm And Haas Electronic Materials Llc | Low internal stress copper electroplating method |
US10218004B2 (en) | 2015-06-26 | 2019-02-26 | Kcf Technologies Co., Ltd. | Electrolytic copper foil for lithium secondary battery and lithium secondary battery comprising the same |
US20190100848A1 (en) * | 2016-06-21 | 2019-04-04 | Guangdong Guanghua Sci-Tech Co., Ltd. | Copper Electroplating Solution and Copper Electroplating Process |
JP2018031072A (ja) * | 2016-08-23 | 2018-03-01 | エル エス エムトロン リミテッドLS Mtron Ltd. | 電解銅箔、それを含む電極、それを含む二次電池およびその製造方法 |
US10644320B2 (en) | 2016-08-23 | 2020-05-05 | Kcf Technologies Co., Ltd. | Electrolytic copper foil, electrode comprising the same, secondary battery comprising the same, and method for manufacturing the same |
EP3309881A1 (en) * | 2016-10-12 | 2018-04-18 | Ls Mtron Ltd. | Easily handleable electrolytic copper foil, electrode comprising the same, secondary battery comprising the same, and method for manufacturing the same |
US10811689B2 (en) | 2016-10-12 | 2020-10-20 | Kcf Technologies Co., Ltd. | Easily handleable electrolytic copper foil, electrode comprising the same, secondary battery comprising the same, and method for manufacturing the same |
JP2018111882A (ja) * | 2017-01-13 | 2018-07-19 | エル エス エムトロン リミテッドLS Mtron Ltd. | しわが実質的にない電解銅箔、それを含む電極、それを含む二次電池、およびその製造方法 |
WO2022041534A1 (zh) * | 2020-08-24 | 2022-03-03 | 九江德福科技股份有限公司 | 适用于hdi板的电解铜箔用添加剂及电解铜箔生产工艺 |
Also Published As
Publication number | Publication date |
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KR20030036415A (ko) | 2003-05-09 |
JP2004162172A (ja) | 2004-06-10 |
CN1263899C (zh) | 2006-07-12 |
KR100389061B1 (ko) | 2003-06-25 |
TWI245082B (en) | 2005-12-11 |
TW200407465A (en) | 2004-05-16 |
CN1500915A (zh) | 2004-06-02 |
CA2448892A1 (en) | 2004-05-14 |
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