TWM550466U - 用於固持基板之基板載體，及用於將基板接合於基板載體或將基板自基板載體剝離的接合/剝離系統 - Google Patents

用於固持基板之基板載體，及用於將基板接合於基板載體或將基板自基板載體剝離的接合/剝離系統 Download PDF

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TWM550466U
TWM550466U TW106203697U TW106203697U TWM550466U TW M550466 U TWM550466 U TW M550466U TW 106203697 U TW106203697 U TW 106203697U TW 106203697 U TW106203697 U TW 106203697U TW M550466 U TWM550466 U TW M550466U
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substrate
substrate carrier
bonding
carrier
disbonding
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劉彥信
希魯納弗卡羅蘇司瑞斯坎薩羅傑
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應用材料股份有限公司
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    • H—ELECTRICITY
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    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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Description

用於固持基板之基板載體，及用於將基板接合於基板載體或將基板自基板載體剝離的接合/剝離系統
本創作揭露的實施例一般係關於半導體製造領域，更具體言之係關於基板處理程序中的基板操作。
基板載體支撐一或多個基板且用於輸送及固持處理腔室和（或）其他設備內的一或多個基板。載體通常由如碳化矽、矽或碳化矽塗層的石墨之材料製成，如此當處理晶圓的同時，允許載體在升高的溫度中使用。本創作人已經認知到對於已經經受過處理（如背面研磨處理）的基板作簡單剝離係有所需求的。在剛性（rigid）載體上使用膠帶的傳統接合方法可能在剝離期間將基板黏接太強，而產生對基板的機械應力。
因此，本創作人已經提供了解決了上述缺點中的一或多個之改良的基板載體之實施例。
本創作提供能夠主動/被動接合（bond）及剝離（de-bond）基板的基板載體之實施例。在一些實施例中，用於固持基板的基板載體包括由多孔材料形成的盤，該盤繞一中心軸對稱形成且界定實質平坦的上表面。
在一些實施例中，用於固持基板的基板載體包括一盤，該盤具有複數個通孔，該複數個通孔經配置而允許來自真空夾盤的真空壓力傳遞到該盤的上表面上的基板之背側以將該基板夾持到該盤。
在一些實施例中，一種用於將基板接合於基板載體或將基板自基板載體剝離的接合/剝離系統，包括剛性（rigid）基部、真空通道及複數個區域，該剛性基部具有一袋部，該袋部形成在上表面中以用於固持基板載體；該真空通道形成於該袋部中；該複數個區域在該袋部內，該複數個區域各具有複數個孔叢集。
本創作示例性的實施例之其他與進一步態樣、特徵與優點將藉由針對本創作目的之以下敘述而得以彰顯。
本創作揭露用於主動接合/剝離的系統之實施例。本創作的基板承載允許在處理期間（如背面研磨）緊固夾持基板，以及接續允許減薄的基板自工具至另一載體平台的無縫移送（transfer）同時有利地最小化在移送期間施加於基板上的機械應力，因而最小化對基板的可能損害。
圖1繪示適合於根據本創作揭露的一些實施例處理基板的系統100。在一些實施例中，系統100是一基板背面研磨系統。然而，系統100也可替代為預期有改良固持基板的任何處理系統。系統100可包括控制器150和處理腔室102。示範性處理腔室可包括背面研磨腔室，其可自美國加州聖克拉拉的應用材料公司購得。可同樣地使用其它合適的處理腔室。
處理腔室102具有腔室主體104和腔室蓋件106，腔室主體104和腔室蓋件106通常包圍處理容積105。處理容積105可界定於基板支撐基座108與背面研磨設備180之間，基板支撐基座108設置於處理腔室102內以用於在基板背面研磨期間支撐基板110與基板載體115堆疊，背面研磨設備180相對於基板支撐基座108設置。在一些實施例中，基板支撐基座108可包括將基板110與基板載體115固持或支撐於基板支撐基座108表面上的機構，如靜電夾盤、真空夾盤、基板固定夾或類似物（未示出）。
例如，在一些實施例中，基板支撐基座108可包括夾持電極140。夾持電極140可耦接至一或多個電源（所示一個電源138）。或者，基板支撐基座108可包括與真空源136耦接的複數個真空通道。設置在基板載體115上的基板110可以經由處理腔室102的壁中開口112進入處理腔室102。可經由第二狹縫閥118或經由用於選擇性地提供透過開口112進出腔室內部的其他機構來選擇性地密封開口112。基板支撐基座108可耦接至升舉機構134，升舉機構134可控制基板支撐基座108的位置於下部位置（如圖示）及選擇性的上部位置之間，下部位置適用於將基板經由開口112移送進出腔室，選擇性的上部位置適用於處理。
在一些實施例中，系統100可包括排氣系統120，排氣系統120用於將多餘的處理氣體、處理副產品或類似物自處理腔室102的內部除去。排氣系統120一般包括泵送氣室124和一或多個導管，該一或多個導管經由一或多個入口122（所示兩個入口）將泵送氣室124耦接至處理腔室102的內部容積（及一般來說的處理容積105）。真空泵128可經由泵送口126而接至泵送氣室124，泵送氣室124用於將排出氣體自處理腔室102泵送排出。真空泵128可以流體耦接至排氣出口132，排氣出口132如需要用於將排氣佈線到適當的排氣處理設備。閥130（如閘閥或類似物）可設置在泵送氣室124中，以結合真空泵128的操作而利於控制排出氣體的流速。儘管所示為z-運動閘閥，但是可利用用於控制排氣流動的任何合適的處理兼容閥。
為了便於控制如上所述的處理腔室102，該系統可包括控制器150，其可係可以在工業環境中用於控制各種腔室和子處理器的通用電腦處理器中的任何形式。CPU 152的記憶體156或電腦可讀取媒體可係一或多個容易取得之記憶體，如隨機存取記憶體（RAM）、唯讀記憶體（ROM）、軟碟、硬碟，或任何其他的數位儲存格式，本端的或是遠端的。支援電路154與CPU 152耦接而用傳統方式支援處理器。這些電路包括快取、電源供應、時脈電路、輸入/輸出電路與子系統以及類似物。
處理一般可作為軟體子程式158儲存於記憶體156中，當CPU 152執行軟體子程式158時，軟體子程式158導致處理腔室102實施本揭露的處理。軟體子程式158亦可由第二CPU（未示出）儲存與（或）執行，第二CPU位於CPU 152控制的硬體之遠端。本創作揭露的方法之部分或全部亦可於硬體中實施。如此一來，該處理可施行於軟體中及使用電腦系統執行於硬體中，如特定應用的積體電路或其他類型的硬體實施，或軟體與硬體之組合。在基板110定位於基板支撐基座108上之後，可執行軟體子程式158。當CPU 152執行軟體子程式158時，軟體子程式158將通用電腦轉換為特定用途電腦（控制器）150，其控制處理腔室的操作，使得該處理得以實施。
圖2繪示設置於基板支撐基座108上的基板110與基板載體115的概要側視圖。在一些實施例中，基板載體115可以是由多孔材料形成的盤，該盤繞中心軸205對稱形成且界定實質平坦的上表面201。基板載體115由多孔材料形成，該多孔材料具有足以將來自真空夾盤（如基板支撐基座108）的負真空壓力（negative vacuum pressure）傳遞（transmit）至基板110的背面以將基板110夾持於基板載體115上的孔隙度（porosity）。具有足夠的孔隙度以將真空壓力傳遞到基板110的示範性材料可包括碳化矽。然而，可以替代地使用類似的材料。在一些實施例中，基板載體115具有的厚度為基板110的厚度的約1.25至約1.5倍。例如，基板載體115可具有的厚度為約0.7mm至約2mm。
在一些實施例中，可施加（如噴塗）半多孔表面塗層202於基板載體115的上表面201，以提供適度的黏著使得在基板載體115與基板110移送期間，基板110不會四處移動。表面塗層202提供一「膠黏（tacky）」表面，以防止基板110容易四處移動。儘管所示表面塗層202覆蓋整個上表面201，但是表面塗層202可替代地被限制於上表面201的周邊。表面塗層202由允許將真空壓力傳遞（transmit）至基板110的背面以將基板夾持於基板載體115上的半多孔材料形成。合適的材料包括如聚二甲基矽氧烷（PDMS）。然而，可以替代地使用類似的材料以達到同樣的目的。
在背面研磨處理期間，基板載體115與設置於其上的基板110由基板支撐基座108支撐。載體允許藉由真空夾盤（即基板支撐基座108）施加的真空壓力的傳遞以產生大於約70kPa的夾持壓力於基板110上。在完成處理之後，移送設備延伸通過開口112以將基板載體115和基板110移送到另一個位置（如另一個腔室）。
對於一般的處理（即於腔室之間移動基板載體115和基板110），基板110可經由表面塗層202（作為非黏性黏合劑（non-sticky adhesive））被動地黏附於基板載體115。在一些實施例中，邊緣階部可形成在基板載體115的周邊，使得表面塗層202與上表面201維持幾乎齊平。為了確保藉由表面塗層202充分地固持基板110在適當位置，可將基板載體115放置在真空夾盤上，將基板110放置在基板載體115頂上，將真空施加於基板110以夾持基板110於載體，以及釋放真空。在夾持期間，表面塗層202被壓縮，從而在表面塗層202和基板110的背側之間形成接觸抓力（contact grip）。因此，基板110經由足夠用於基板110一般搬動/移送的機械抓力（即足以在基板110的搬動/移送期間防止基板移動）而被動地結合到載體。
圖3繪示根據本創作揭露的一些實施例之基板載體315之頂部圖。圖4繪示截取穿過參考面4-4'的圖3的基板載體315之截面圖。基板載體315可包括複數個通孔302。當基板載體315被放置在真空夾盤的頂上時，通孔302允許負真空壓力傳遞到基板的背面，從而夾持基板到基板載體315上。在一些實施例中（且如圖3所示），複數個通孔302以圓圈排列在基板110的周邊位置處或附近以及排列在基板載體315的中心處。然而，複數個通孔302可依其他配置排列以利於將基板110夾持到基板載體315。在一些實施例中，每個通孔302具有約1mm的直徑。在一些實施例中，基板載體315可選擇性地包括一或多個電極304，當電極304耦接於靜電夾盤時，電極304提供靜電夾持力給基板，靜電夾盤具有耦接至電極304的導線。如此一來，基板載體315可有利地與真空夾盤和靜電夾盤同時一起使用。
圖5繪示根據本揭露的一些實施例用於將基板接合至基板載體或將基板自基板載體剝離之接合/剝離系統500。接合/剝離系統500包括剛性基部502與袋部504，袋部504用於固持基板載體115。在基部內的氣動歧管（未示出）允許在基板載體115不同區域的負壓、正壓或者同時兩者之控制。
在剝離期間，被動接合的基板被帶到剛性基部上。經由剛性基部502的通道505施加負真空壓力以固持基板載體115向下。正壓施於選定區域506A、506B、506C與（或）506D以噴射氣體進入基板和基板載體115之間的介面。在圖5所示的實施例中，接合/剝離系統500包括四個區域506A、506B、506C與506D。然而，可替代地使用任何數量的區域以利於上述基板的結合與剝離。每個區域包括複數個孔叢集，該複數個孔叢集經由密封環508而自周圍環境密封。在一些實施例中，該等孔叢集510中的各者具有約0.2mm至約0.4mm的直徑。在一些實施例中，各密封環508內的各叢集與相鄰叢集分隔約2mm至約3mm之間。在一些實施例中，各密封環508內的各叢集與相鄰叢集分隔約2.5mm。傳遞至載體的總負壓大於施加在載體上的正壓，以確保當基板剝離時，載體保持在袋部504中。由於表面塗層202和基板110之間的被動接合不強，壓力逆轉（pressure reversal）以最小應力剝離基板110。
或者，接合的基板可藉由負壓的手段（means）固定在剛性基座。接著，真空/靜電棒傳遞臂被帶到基板的頂表面。真空或靜電接合在基板和傳遞臂之間啟動，產生在基板110和基板載體115堆疊兩側上夾持（即在載體側的負壓以及在基板側上的負壓/靜電力。最後，透過選定區域處的剛性基部與基板載體115排出正壓氣體清除（purge）以將基板110自基板載體115剝離。如此一來，基板110可有利地以最小機械應力輕易地自基板載體115分離。
儘管前面該係針對本揭露的實施例，但在不背離本創作基本範圍下，可設計本揭露的其他與進一步的實施例。
100‧‧‧系統
102‧‧‧處理腔室
104‧‧‧腔室主體
105‧‧‧處理容積
106‧‧‧腔室蓋件
108‧‧‧支撐基座
110‧‧‧基板
112‧‧‧開口
115‧‧‧基板載體
118‧‧‧狹縫閥
120‧‧‧排氣系統
122‧‧‧入口
124‧‧‧泵送氣室
126‧‧‧泵送口
128‧‧‧真空泵
130‧‧‧閥
132‧‧‧排氣出口
134‧‧‧升舉機構
136‧‧‧真空源
138‧‧‧電源
140‧‧‧夾持電極
150‧‧‧控制器
152‧‧‧CPU
154‧‧‧支援電路
156‧‧‧記憶體
158‧‧‧軟體子程式
180‧‧‧背面研磨設備
201‧‧‧上表面
202‧‧‧表面塗層
205‧‧‧中心軸
302‧‧‧通孔
304‧‧‧電極
315‧‧‧基板載體
500‧‧‧接合/剝離系統
502‧‧‧剛性基部
504‧‧‧袋部
505‧‧‧通道
506A-506D‧‧‧區域
508‧‧‧密封環
510‧‧‧孔叢集
本創作揭露之特徵已簡要概述於前，並在以下有更詳盡之討論，可以藉由參考所附圖式中繪示之本創作實施例以作瞭解。然而，所附圖式只繪示了本創作揭露的示範實施例，而由於本創作可允許其他等效之實施例，因此所附圖式並不會視為本創作範圍之限制。
圖1繪示適合與根據本創作揭露的一些實施例之基板載體一起使用的處理腔室；
圖2係根據本創作揭露的一些實施例之設置於基板支撐基座上的基板載體之概要側視圖；
圖3繪示根據本創作揭露的一些實施例之基板載體之頂部平面圖；
圖4繪示截取穿過參考面4-4'的圖3的基板載體之截面圖；
圖5繪示根據本創作揭露的一些實施例之接合/剝離系統的頂部平面圖。
為便於理解，在可能的情況下，使用相同的數字編號代表圖示中相同的元件。為求清楚，圖式未依比例繪示且可能被簡化。一個實施例中的元件與特徵可有利地用於其它實施例中而無需贅述。
108‧‧‧支撐基座
110‧‧‧基板
115‧‧‧基板載體
201‧‧‧上表面
202‧‧‧表面塗層
205‧‧‧中心軸

Claims (12)

  1. 一種用於固持一基板之基板載體，包括： 一盤，該盤具有複數個通孔，該複數個通孔經配置而允許來自一真空夾盤的真空壓力傳遞到該盤的一上表面上的一基板之一背側以將該基板夾持到該盤。
  2. 如請求項1所述之基板載體，進一步包括： 一或多個電極，該一或多個電極設置於該盤中且經配置而耦接至一靜電夾盤的導線以將該基板靜電夾持到該盤的該上表面上。
  3. 如請求項1至2中之任一者所述之基板載體，其中該複數個通孔以一圓圈排列在對應於該基板的一周邊的一位置處或附近以及排列在該盤的一中心處。
  4. 如請求項1至2中之任一者所述之基板載體，其中該複數個通孔中的各者具有約1mm的一直徑。
  5. 一種用於將一基板接合於一基板載體或將該基板自該基板載體剝離的接合/剝離系統，包括： 一剛性（rigid）基部，該剛性基部具有一袋部，該袋部形成在一上表面中以用於固持該基板載體； 一真空通道，該真空通道形成於該袋部中；及 在該袋部內的複數個區域，該複數個區域各具有複數個孔叢集。
  6. 如請求項5所述之接合/剝離系統，其中該複數個孔叢集中的各者經由一密封環而自一周圍環境密封。
  7. 如請求項5至6中之任一者所述之接合/剝離系統，其中該等孔叢集中的各者具有約0.2mm至約0.4mm的一直徑。
  8. 如請求項6所述之接合/剝離系統，其中各密封環內的各叢集與一相鄰叢集分隔約2mm至約3mm之間。
  9. 如請求項5至6中之任一者所述之接合/剝離系統，其中該複數個區域包括四個區域。
  10. 如請求項5至6中之任一者所述之接合/剝離系統，其中該等真空通道經配置而傳遞一負壓到該基板載體及該複數個區域經配置而傳遞該基板與該基板載體的一介面處的一正壓。
  11. 如請求項10所述之接合/剝離系統，其中藉由將一氣體排入該介面來達到該正壓。
  12. 如請求項10所述之接合/剝離系統，其中該負壓大於該正壓以確保當該基板自該基板載體移除時，該基板載體保持在該袋部中。
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