WO2017066311A1 - Substrate carrier for active/passive bonding and de-bonding of a substrate - Google Patents

Substrate carrier for active/passive bonding and de-bonding of a substrate Download PDF

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Publication number
WO2017066311A1
WO2017066311A1 PCT/US2016/056623 US2016056623W WO2017066311A1 WO 2017066311 A1 WO2017066311 A1 WO 2017066311A1 US 2016056623 W US2016056623 W US 2016056623W WO 2017066311 A1 WO2017066311 A1 WO 2017066311A1
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Prior art keywords
substrate
substrate carrier
bonding
disk
carrier
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PCT/US2016/056623
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French (fr)
Inventor
Jen Sern LEW
Sriskantharajah Thirunavukarasu
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Applied Materials, Inc.
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Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020187013512A priority Critical patent/KR102650990B1/en
Priority to JP2018518634A priority patent/JP7071260B2/en
Publication of WO2017066311A1 publication Critical patent/WO2017066311A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Abstract

Embodiments of substrate carriers which enable active/passive bonding and de-bonding of a substrate are provided herein. In some embodiments, a substrate carrier for holding a substrate comprises a disk formed of a porous material, the disk being formed symmetrically about a central axis and defining a substantially planar upper surface and an exposed opposing lower surface. In some embodiments, the porous material is silicon carbide and the substrate carrier includes a semi-porous surface coating formed atop the upper surface of the disk.

Description

SUBSTRATE CARRIER FOR ACTIVE/PASSIVE BONDING AND DE-BONDING
OF A SUBSTRATE
FIELD
[0001] Embodiments of the present disclosure relate generally to the field of semiconductor manufacturing and, more particularly, to handling of substrates in a substrate processing procedure.
BACKGROUND
[0002] Substrate carriers support one or more substrates and are used to transport and hold the one or more substrates inside process chambers and/or other equipment. The carriers are frequently made of materials such as silicon carbide, silicon, or silicon carbide coated graphite, which allow them to be used at the elevated temperatures while the wafers are being processed. The inventors have identified a need for simple de-bonding of substrates that have gone through a process (e.g., a back-grinding process). Conventional bonding approaches using adhesive tapes on a rigid carrier may adhere to the substrate too strongly during de- bonding, resulting in mechanical stresses to the substrate.
[0003] Thus, the inventors have provided embodiments of improved substrate carriers that address one or more of the above disadvantages.
SUMMARY
[0004] Embodiments of substrate carriers which enable active/passive bonding and de-bonding of a substrate are provided herein. In some embodiments, a substrate carrier for holding a substrate includes a disk formed of a porous material, the disk being formed symmetrically about a central axis and defining a substantially planar upper surface.
[0005] In some embodiments, a substrate carrier for holding a substrate includes a disk having an exposed upper surface, an exposed lower surface, and a plurality of through holes extending from the upper surface to the lower surface to allow vacuum pressure from a vacuum chuck to be transmitted to a backside of a substrate on an upper surface of the disk to clamp the substrate to the disk. [0006] In some embodiments, a bonding/de-bonding system for bonding or de- bonding a substrate to/from a substrate carrier includes a rigid base having a pocket formed in an upper surface for holding the substrate carrier; vacuum channels formed in the pocket; and a plurality of regions within the picket, each having a plurality of hole clusters.
[0007] Other and further aspects, features, and advantages of illustrative embodiments will be apparent from the following description given for the purpose of disclosure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] Embodiments of the present disclosure, briefly summarized above and discussed in greater detail below, can be understood by reference to illustrative embodiments of the disclosure depicted in the appended drawings. However, the appended drawings illustrate only exemplary embodiments of the disclosure and are therefore not to be considered limiting of the scope of inventive principles disclosed, for such principles may admit to other equally effective embodiments.
[0009] Figure 1 depicts a process chamber suitable for use with a substrate carrier in accordance with some embodiments of the present disclosure.
[0010] Figure 2 a schematic side view of a substrate carrier disposed atop a substrate support pedestal in accordance with some embodiments of the present disclosure.
[0011] Figure 3 depicts a top plan view of a substrate carrier in accordance with some embodiments of the present disclosure.
[0012] Figure 4 depicts a cross sectional view of the substrate carrier of Figure 3, taken across the reference plane 4-4'.
[0013] Figure 5 depicts a top plan view of bonding/de-bonding system in accordance with some embodiments of the present disclosure.
[0014] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
DETAILED DESCRIPTION
[0015] Embodiments of a system for an active bonding/de-bonding are disclosed herein. The inventive substrate carrier allows firm holding of a substrate during a process, such as, for example, back-grinding, and subsequently allow seamless transfer of the thinned substrate from the tool to another carrier platform while advantageously minimizing mechanical stresses exerted on the substrate during transfer, thus also minimizing potential damage to the substrate.
[0016] Figure 1 depicts a system 100 suitable for processing a substrate in accordance with some embodiments of the present disclosure. In some embodiments, the system 100 is a substrate back-grinding system. However, the system 100 may alternatively be any processing system in which an improved holding of a substrate is desirable. The system 100 may comprise a controller 150 and a process chamber 102. Exemplary process chambers may include back- grinding chambers, available from Applied Materials, Inc. of Santa Clara, California. Other suitable process chambers may similarly be used.
[0017] The process chamber 102 has a chamber body 104 and a chamber lid 106 generally enclosing a processing volume 105. The processing volume 105 may be defined, for example, between a substrate support pedestal 108 disposed within the process chamber 102 and backgrinding equipment 180 disposed opposite the substrate support pedestal 108. The substrate support pedestal 108 is configured to support a substrate 1 10 placed on a removable substrate carrier 1 15 during substrate back-grinding operations. In some embodiments, the substrate support pedestal 108 may include a mechanism that retains or supports the substrate 1 10 and substrate carrier 1 15 on the surface of the substrate support pedestal 108, such as an electrostatic chuck, a vacuum chuck, a substrate retaining clamp, or the like (not shown).
[0018] For example, in some embodiments, the substrate support pedestal 108 may include a chucking electrode 140. The chucking electrode 140 may be coupled to one or more power sources (one power source 138 shown). Alternatively, the substrate support pedestal 108 may include a plurality of vacuum channels coupled to a vacuum source 136. The substrate 1 10 disposed on the substrate carrier 1 15 may enter the process chamber 102 via an opening 1 12 in a wall of the process chamber 102. The opening 1 12 may be selectively sealed via a slit valve 1 18, or other mechanism for selectively providing access to the interior of the chamber through the opening 1 12. The substrate support pedestal 108 may be coupled to a lift mechanism 134 that may control the position of the substrate support pedestal 108 between a lower position (as shown) suitable for transferring substrates into and out of the chamber via the opening 1 12 and a selectable upper position suitable for processing.
[0019] In some embodiments, the system 100 may include an exhaust system 120 for removing excess process gases, processing by-products, or the like, from the interior of the process chamber 102. The exhaust system 120 generally includes a pumping plenum 124 and one or more conduits that couple the pumping plenum 124 to the inner volume (and generally, the processing volume 105) of the process chamber 102, for example via one or more inlets 122 (two inlets shown). A vacuum pump 128 may be coupled to the pumping plenum 124 via a pumping port 126 for pumping out the exhaust gases from the process chamber 102. The vacuum pump 128 may be fluidly coupled to an exhaust outlet 132 for routing the exhaust as needed to appropriate exhaust handling equipment. A valve 130 (such as a gate valve, or the like) may be disposed in the pumping plenum 124 to facilitate control of the flow rate of the exhaust gases in combination with the operation of the vacuum pump 128. Although a z-motion gate valve is shown, any suitable, process compatible valve for controlling the flow of the exhaust may be utilized.
[0020] To facilitate control of the process chamber 102 as described above, the system may include a controller 150, which may be one of any form of general- purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors. The memory, or computer-readable medium, 156 of the CPU 152 may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. The support circuits 154 are coupled to the CPU 152 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like.
[0021] Processes may generally be stored in the memory 156 as a software routine 158 that, when executed by the CPU 152, causes the process chamber 102 to perform processes of the present disclosure. The software routine 158 may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU 152. Some or all of the method of the present disclosure may also be performed in hardware. As such, the process may be implemented in software and executed using a computer system, in hardware as, e.g., an application specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. The software routine 158 may be executed after the substrate 1 10 is positioned on the substrate support pedestal 108. The software routine 158, when executed by the CPU 152, transforms the general purpose computer into a specific purpose computer (controller) 150 that controls the chamber operation such that the processes are performed.
[0022] Figure 2 depicts a schematic side view of the substrate 1 10 and the substrate carrier 1 15 disposed on the substrate support pedestal 108. In some embodiments, the substrate carrier 1 15 may be a disk formed of a porous material, the disk being formed symmetrically about a central axis 205 and defining a substantially planar upper surface 201 The substrate carrier 1 15 includes a first side including the substantially planar upper surface 201 and an opposing second side. In some embodiments, the second side of the substrate carrier 1 15 is a substantially planar exposed surface, such that the substrate carrier 1 15 may be placed on and removed from the substrate support pedestal 108. The substrate carrier 1 15 is formed of a porous material having a porosity sufficient to transmit a negative vacuum pressure from a vacuum chuck (e.g., the substrate support pedestal 108) to a backside of the substrate 1 10 to clamp the substrate 1 10 onto the substrate carrier 1 15. Exemplary materials with a sufficient porosity to transmit the vacuum pressure to the substrate 1 10 may include silicon carbide. However, similar materials may alternatively be used. In some embodiments, the carrier may be formed of, for example, aluminum nitride having a purity between about 90 and 100%, a density between about 3.0 kg/m3 and 4 kg/m3, and a porosity of less than 1 . In some embodiments, the aluminum nitride carrier may have a purity of about 97% and a density of about 3.3 kg/m3. In some embodiments, the substrate carrier 1 15 has a thickness that is about 1.25 to about 1.5 times the thickness of the substrate 1 10. For example, the substrate carrier 1 15 may have a thickness of about 0.7 mm to about 2 mm.
[0023] In some embodiments, a semi-porous surface coating 202 may be applied (e.g., spray coated) to the upper surface 201 of the substrate carrier 1 15 to provide moderate adhesion so that the substrate 1 10 does not move around during transfer of the substrate carrier 1 15 and the substrate 1 10. The surface coating 202 provides a "tacky" surface that prevents the substrate 1 10 from easily moving around. Although the surface coating 202 is depicted as covering the entire upper surface 201 , the surface coating 202 may alternatively be limited to a periphery of the upper surface 201 . The surface coating 202 is formed of a semi-porous material that allows the vacuum pressure to be transmitted to a backside of the substrate 1 10 for clamping the substrate to the substrate carrier 1 15. Suitable materials include, for example, polydimethylsiloxane (PDMS). However, similar materials may alternatively be used to achieve the same purpose.
[0024] During a back-grinding process, the substrate carrier 1 15 with the substrate 1 10 disposed atop is supported by the substrate support pedestal 108. The carrier allows transmission of a vacuum pressure exerted by the vacuum chuck (i.e., the substrate support pedestal 108) to create a clamping pressure greater than about 70 kPa on the substrate 1 10. After the process is completed, a transfer apparatus extends through the opening 1 12 to transfer the substrate carrier 1 15 and the substrate 1 10 to another location (e.g., another chamber).
[0025] For general handling (i.e., moving of the substrate carrier 1 15 and substrate 1 10 between chambers), the substrate 1 10 may be passively adhered to the substrate carrier 1 15 via the surface coating 202, which acts as a non-sticky adhesive. In some embodiments, an edge step may be formed at the perimeter of the substrate carrier 1 15 so that the surface coating 202 remains almost flush with the upper surface 201 . To ensure that the substrate 1 10 is sufficiently held in place by the surface coating 202, the substrate carrier 1 15 may be placed onto a vacuum chuck, the substrate 1 10 placed atop the substrate carrier 1 15, a vacuum applied to the substrate 1 10 clamping the substrate 1 10 to the carrier, and the vacuum released. During clamping, the surface coating 202 is compressed, thus forming a contact grip between the surface coating 202 and the backside of the substrate 1 10. As a result, the substrate 1 10 is passively bonded to the carrier via a mechanical grip sufficient for general handling/transfer of the substrate 1 10 (i.e., sufficient to prevent movement of the substrate during handling/transfer of the substrate 1 10).
[0026] Figure 3 depicts a top view a substrate carrier 315 in accordance with some embodiments of the present disclosure. Figure 4 depicts a cross-sectional view of the substrate carrier 315 taken along reference plane 4-4'. The substrate carrier 315 is a disk having an exposed upper surface, an exposed lower surface, and a plurality of through holes 302 extending from the upper surface to the lower surface to allow vacuum pressure from a vacuum chuck to be transmitted to a backside of a substrate on an upper surface of the disk to clamp the substrate to the disk. When the substrate carrier 315 is placed atop a vacuum chuck, the through holes 302 allow a negative vacuum pressure to be transmitted to a backside of the substrate, thus clamping the substrate onto the substrate carrier 315. In some embodiments (and as shown in Figure 3), the plurality of through holes 302 may be arranged in a circle at or near the peripheral location of the substrate 1 10 and at the center of the substrate carrier 315. However, the plurality of through holes 302 may be arranged in other configurations to facilitate clamping of the substrate 1 10 to the substrate carrier 315. In some embodiments, each of the through holes 302 has a diameter of about 1 mm. In some embodiments, the substrate carrier 315 may optionally include one or more electrodes 304, which provide an electrostatic clamping force to the substrate when coupled to an electrostatic chuck via leads 306 that electrically couple the one or more electrodes 304 to the electrostatic chuck. As such, the substrate carrier 315 may advantageously be used with both vacuum chucks and electrostatic chucks.
[0027] Figure 5 depicts a bonding/de-bonding system 500 for bonding or de- bonding a substrate to/from a substrate carrier in accordance with some embodiments of the present disclosure. The bonding/de-bonding system 500 includes a rigid base 502 with a pocket 504 for holding the substrate carrier 1 15. A pneumatic manifold (not shown) within the base allows control of either negative pressure, positive pressure, or both simultaneously at different regions of the substrate carrier 1 15.
[0028] During de-bonding, a passively bonded substrate is brought onto the rigid base. A negative vacuum pressure is applied via channels 505 of the rigid base 502 to hold the substrate carrier 1 15 down. A positive pressure is applied at select regions 506A, 506B, 506c, and/or 506D to eject gas into the interface between the substrate and the substrate carrier 1 15. In the embodiment depicted in Figure 5, the bonding/de-bonding system 500 includes four regions 506A, 506B, 506c, and 506D. However, any number of regions may alternatively be used to facilitate bonding and de-bonding of the substrate as explained above. Each of the regions includes a plurality of hole clusters 510 sealed off from the surrounding environment via a sealing ring 508. In some embodiments, each hole of the hole clusters 510 may have a diameter of about 0.2 mm to about 0.4 mm. In some embodiments, each cluster within each sealing ring 508 is separated from an adjacent cluster by between about 2 mm to about 3 mm. In some embodiments, each cluster within each sealing ring 508 is separated from an adjacent cluster by about 2.5 mm. The overall negative pressure transmitted to the carrier is greater than the positive pressure exerted on the carrier to ensure that the carrier remains in the pocket 504 while the substrate is de-bonded. Because the passive bonding between the surface coating 202 and the substrate 1 10 is not strong, the pressure reversal de-bonds the substrate 1 10 with minimal stress.
[0029] Alternatively, a bonded substrate may be secured in the rigid base by means of negative pressure. Subsequently, a vacuum/electrostatic wand transfer arm is brought to a top surface of the substrate. Either vacuum or electrostatic bonding is initiated between the substrate and the transfer arm, resulting in clamping on both sides of the substrate 1 10 and substrate carrier 1 15 stack (i.e., negative pressure on the carrier side and negative pressure/electrostatic force on the substrate side). Finally, a positive pressure gas purge is ejected through the rigid base and the substrate carrier 1 15 at select regions to de-bond the substrate 1 10 from the substrate carrier 1 15. As a result, the substrate 1 10 may advantageously be easily separated from the substrate carrier 1 15 with minimal mechanical stress.
[0030] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope of the present disclosure.

Claims

Claims:
1 . A substrate carrier for holding a substrate; comprising
a disk formed of a porous material, the disk being formed symmetrically about a central axis and defining a substantially planar upper surface and an exposed opposing lower surface.
2. The substrate carrier of claim 1. further comprising:
a semi-porous surface coating formed on the upper surface.
3. The substrate carrier of claim 2S wherein the semi-porous surface coating is formed on an entirety of the upper surface.
4. The substrate carrier of claim 2, wherein the semi-porous surface coating is formed solely on a periphery of the upper surface.
5. The substrate carrier of claim 4, wherein the disk includes an edge step formed in the periphery of the upper surface, and wherein the semi-porous surface coating is disposed on the edge step so that the semi-porous surface coating is substantially flush with the upper surface.
8. The substrate carrier of any of claims 2 to 5, wherein the semi-porous surface coating comprises polydimethylsiloxane.
7. The substrate carrier of any of claims 1 to 5, wherein the substrate carrier has a thickness of between about 0.7 mm to about 2 mm.
8. The substrate carrier of any of claims 1 to 5, wherein the porous material comprises silicon carbide.
9. A substrate carrier for holding a substrate, comprising:
a disk having an exposed upper surface, an exposed lower surface, and a plurality of through holes extending from the upper surface to the lower surface to allow vacuum pressure from a vacuum chuck fo be iransmiiied to a backside of a substrate on an upper surface of the disk to damp the substrate to the disk,
10. The substrate carrier of claim 9, further comprising:
one or more electrodes disposed within the disk and configured to couple to leads of an electrostatic chuck, to electrostatically clamp the substrate onto the upper surface of the disk,
1 1 . The substrate carrier of any of claims 9 to 10. wherein each of the plurality of through holes has a diameter of about 1 mm.
12. A bonding/de-bonding system for bonding or de-bonding a substrate to/from a substrate carrier, comprising:
a rigid base having a pocket formed in an upper surface for holding the substrate carrier;
vacuum channels formed in the pocket; and
a plurality of regions within the pocket, each having a plurality of hole clusters.
13. The bonding/de-bonding system of claim 12, wherein each of the plurality of hole clusters is sealed off from a surrounding environment via a sealing ring.
14. The bonding/de-bonding system of any of claims 12 to 13, wherein each hole of the hole clusters has a diameter of about 0.2 mm to about 0.4 mm.
15. The bonding/de-bonding system of any of claims 12 to 13, wherein each cluster within each sealing ring is separated from an adjacent cluster by between about 2 mm and about 3 mm.
PCT/US2016/056623 2015-10-12 2016-10-12 Substrate carrier for active/passive bonding and de-bonding of a substrate WO2017066311A1 (en)

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TWM546597U (en) 2017-08-01
US10607870B2 (en) 2020-03-31
US20170103908A1 (en) 2017-04-13
JP7071260B2 (en) 2022-05-18
KR102650990B1 (en) 2024-03-22
TWM550466U (en) 2017-10-11
KR20180056788A (en) 2018-05-29
JP2018533212A (en) 2018-11-08

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