JP3258042B2 - Wafer chuck - Google Patents
Wafer chuckInfo
- Publication number
- JP3258042B2 JP3258042B2 JP23252091A JP23252091A JP3258042B2 JP 3258042 B2 JP3258042 B2 JP 3258042B2 JP 23252091 A JP23252091 A JP 23252091A JP 23252091 A JP23252091 A JP 23252091A JP 3258042 B2 JP3258042 B2 JP 3258042B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chuck
- base material
- wafer chuck
- coat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体回路素子製造用
の露光装置等において、ウエハを保持し平面矯正するチ
ャックの表面構造及びその母材に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface structure of a chuck for holding and flattening a wafer in an exposure apparatus for manufacturing a semiconductor circuit element and a base material thereof.
【０００２】[0002]
【従来の技術】従来、半導体素子製造用に用いられてい
るウエハ支持のチャックの材質は、アルミ系の金属にア
ルマイト（商品名）メッキしたものであった。それ以外
には、ステンレスやアルマイト系セラミクスが用いられ
ていた。2. Description of the Related Art Heretofore, the material of a chuck for supporting a wafer used for manufacturing a semiconductor device has been an aluminum-based metal plated with alumite (trade name). Other than that, stainless steel and anodized ceramics were used.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来例のアルミにアルマイトメッキしたものでは、母材が
半導体素子の主な材料となるシリコンよりも軟らかいた
めに、キズや打痕が付き、耐久性に問題があった。ステ
ンレスを材料にしたチャックもアルミと同様の欠点があ
った。そこで最近では、耐久性を向上させるために、硬
い材料であるセラミックスが用いられるようになってき
た。しかしながら、セラミックスは製造工程において、
均一な粒子（数μm 程度の大きさ）を焼き固めて作るた
めに、不均質構造になる。この場合、表面を研削やラッ
プで仕上げても、表面は凹凸形状になる。この凹形状の
中にウエハ裏面の感光材料等の異物が入り込み易い。こ
の異物のため、ウエハの平面矯正が正常にできなくな
る。この場合、凹凸形状のため一度入った異物が容易に
取れない。更にその凸凹形状が表面の平滑性を失わせる
ためにウエハの搬送が円滑に行われない。However, in the case of the above-mentioned conventional aluminum plated with alumite, since the base material is softer than silicon which is the main material of the semiconductor element, scratches and dents are formed and durability is increased. Had a problem. Chuck made of stainless steel has the same disadvantages as aluminum. Therefore, in recent years, ceramics that are hard materials have been used in order to improve durability. However, ceramics are used in the manufacturing process.
Since it is made by baking and hardening uniform particles (about several μm in size), it has a heterogeneous structure. In this case, even if the surface is finished by grinding or lapping, the surface has an uneven shape. Foreign matter such as a photosensitive material on the back surface of the wafer easily enters the concave shape. Due to the foreign matter, the flatness of the wafer cannot be corrected normally. In this case, the foreign matter once entered cannot be easily removed due to the uneven shape. Further, the unevenness causes the smoothness of the surface to be lost, so that the wafer cannot be transported smoothly.
【０００４】本発明は上記従来技術の欠点に鑑みなされ
たものであって、耐久性を向上させるとともに異物付着
を防止し安定したウエハの平面矯正が可能なウエハチャ
ックの提供を目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks of the related art, and has as its object to provide a wafer chuck capable of improving the durability, preventing foreign matter from adhering, and stably correcting the flatness of a wafer.
【０００５】[0005]
【課題を解決するための手段および作用】前記目的を達
成するため、本発明によれば、母材に、硬度が大きく耐
久性があるセラミックスを用い、その表面をウエハによ
り硬度が若干低くかつ、母材との熱膨張率が小さく、セ
ラミックスのような不均質構造でない材質でコートし
た。According to the present invention, in order to achieve the above-mentioned object, according to the present invention, a ceramic having high hardness and durability is used as a base material, and the surface thereof is slightly lower in hardness by a wafer, and It was coated with a material that has a low coefficient of thermal expansion with the base material and does not have a heterogeneous structure such as ceramics.
【０００６】このセラミックスの不均質構造は、焼結の
結果、多結晶状態を得る時に粒界で数μm から数１０μ
m の段差と大きさを持つことになるわけで、セラミック
スの焼結過程で除去することが困難なものである。従っ
てオーバーコート層を形成する場合に真空加熱蒸着法、
ＣＶＤ法等が用いられるが段差の大きいセラミックスの
表面に、例えば数１０μm の薄膜を金属、あるいは金属
酸化物等で形成することは難しい。そこで本発明では該
オーバーコート層を形成する際に、そのような無機物を
用いるのではなく、段差の大きいセラミックスの場合に
は有機物のオーバーコート材を用いる。これにより大き
な段差は容易に平面化可能になる。また有機オーバーコ
ート材の場合には平面性の向上のみならず平滑性の向上
も図られる。このような有機物オーバーコート材とし
て、例えば、ポリテトラフルオロエチレン（商品名、テ
フロン）、ポリ塩化ビニル等のビニル系樹脂及びポリシ
ロキサン、ポリジメチルシロキサン等のシリコン樹脂、
２−４ジクロルフェノキシ酢酸等の熱硬化性尿素樹脂、
ポリエチレンテレフタレート、その他既知のフォトレジ
スト等が有効に用いられる。しかしながら、本発明の目
的のためには、テフロン（商品名、アメリカE.I.du Pon
tde Numours & Co. Inc. 製ポリフッ化エチレン系繊維)
が最も適した形で利用できる。この理由は平面性のみ
ならず平滑性に優れていること及び樹脂の硬化性も大で
あり耐摩耗性も良いことである。耐熱性、耐薬品性が良
いことも、金属のオーバーコート材にないメリットであ
る。[0006] The heterogeneous structure of this ceramic has a grain boundary of several μm to several tens μm when a polycrystalline state is obtained by sintering.
Since it has a step and a size of m, it is difficult to remove it during the sintering process of ceramics. Therefore, when forming the overcoat layer, vacuum heating evaporation method,
Although a CVD method or the like is used, it is difficult to form a thin film of, for example, several tens of μm from a metal or metal oxide on the surface of a ceramic having a large step. Therefore, in the present invention, such an inorganic substance is not used when forming the overcoat layer, but an organic overcoat material is used in the case of a ceramic having a large step. Thereby, a large step can be easily planarized. In the case of an organic overcoat material, not only the flatness but also the smoothness can be improved. Examples of such organic overcoat materials include polytetrafluoroethylene (trade name, Teflon), vinyl resins such as polyvinyl chloride, and silicone resins such as polysiloxane and polydimethylsiloxane.
Thermosetting urea resin such as 2-4 dichlorophenoxyacetic acid,
Polyethylene terephthalate and other known photoresists are effectively used. However, for the purposes of the present invention, Teflon (trade name, US EIdu Pon
tde Numours & Co. Inc. polyfluoroethylene fiber)
Are available in the most suitable form. The reason for this is that not only the flatness but also the smoothness is excellent, and the curability of the resin is large and the abrasion resistance is good. Good heat resistance and chemical resistance are also advantages that metal overcoat materials do not have.
【０００７】[0007]
【実施例】本発明の第１の実施例を図１および図２に示
す。図１はウエハを保持及び平面矯正するためのチャッ
クの外観を示し、図２はその断面を示す。１は、ウエハ
と接するチャック表面であり、この表面１上にウエハ
（図示しない）が置かれる。ウエハの保持は、負圧溝２
によって行われる。負圧の供給は穴４によってチャック
裏面６から行われる。また、ウエハの平面矯正は溝２を
介して真空吸着することによりチャック表面１によって
行われる。チャック表面１はコート３で覆われる。本発
明の特徴はこのコート３であり、ウエハの保持面側に配
置される。コート３の材質は、ウエハより軟らかい高分
子化合物、特にテフロン（商品名、デュポン社）が有効
である。テフロン膜は加圧成形焼成法、押出成形法によ
って形成する。電気的特性にも優れ高温（３２５℃）に
も安定で熱可塑性も示さない。更に、表面は摩擦係数が
小さいので平滑性に優れている。コート層の厚さは１０
μm 〜６０μm であり、これはコート形成後、チャック
表面１の平面度を得るための研削及びラップ量を含めた
厚さである。研削及びラップ後のコート厚さは５μm 〜
３０μm でありこのチャック表面はウエハ表面粗さと同
等に仕上げられ、その時に母材との熱膨張率差による破
壊を避けるために、できるだけ薄いことが望ましい。負
圧溝２の加工は、チャックの研削及びラップ後に行う。
チャックの母材５の材質は、主に、多孔質構造であるＡ
ｌ2Ｏ3系のセラミクスである。母材５はその硬度がウエ
ハと同等か、それ以上であり、コートとの熱膨張率の差
が１０ppm 以下のものが望ましい。1 and 2 show a first embodiment of the present invention. FIG. 1 shows the appearance of a chuck for holding and flattening a wafer, and FIG. 2 shows a cross section thereof. Reference numeral 1 denotes a chuck surface in contact with the wafer, on which a wafer (not shown) is placed. The wafer is held in the negative pressure groove 2
Done by The supply of the negative pressure is performed from the chuck back surface 6 by the hole 4. The flattening of the wafer is performed by the chuck surface 1 by vacuum suction through the groove 2. The chuck surface 1 is covered with a coat 3. The feature of the present invention is this coat 3, which is arranged on the holding surface side of the wafer. As a material of the coat 3, a polymer compound softer than the wafer, particularly, Teflon (trade name, DuPont) is effective. The Teflon film is formed by a pressure molding baking method and an extrusion molding method. It has excellent electrical properties and is stable even at high temperatures (325 ° C) and does not show thermoplasticity. Further, the surface has excellent smoothness due to a small coefficient of friction. The thickness of the coat layer is 10
μm to 60 μm, which is the thickness including the amount of grinding and lapping for obtaining the flatness of the chuck surface 1 after forming the coat. Coating thickness after grinding and lap is 5μm ~
The thickness of the chuck surface is 30 .mu.m, and the surface of the chuck is preferably finished to have the same roughness as the surface of the wafer. The processing of the negative pressure groove 2 is performed after grinding and lapping of the chuck.
The material of the base material 5 of the chuck is mainly A having a porous structure.
l 2 O 3 ceramics. It is desirable that the base material 5 has a hardness equal to or higher than that of the wafer and a difference in thermal expansion coefficient with the coat of 10 ppm or less.
【０００８】本発明の別の実施例の断面を図３に示す。
この実施例では、コート７はウエハに接する面だけでな
くチャック表面全面を覆う。このコート７はチャックの
溝２を加工後に形成しコート後、研削、ラップする。図
３の構造は、図２の構造に比べて、ウエハと接する面積
が１ｍｍ2 以下になった時、または巾が０．５ｍｍ以
下になる時に、母材から、コート層が剥がれにくい特徴
を持つ。FIG. 3 shows a cross section of another embodiment of the present invention.
In this embodiment, the coat 7 covers not only the surface in contact with the wafer but also the entire surface of the chuck. This coat 7 is formed after machining the groove 2 of the chuck, and after coating, grinding and lapping. The structure shown in FIG. 3 is characterized in that the coat layer is less likely to be peeled off from the base material when the area in contact with the wafer becomes 1 mm 2 or less or the width becomes 0.5 mm or less, as compared with the structure shown in FIG. .
【０００９】[0009]
【発明の効果】以上に説明したように、ウエハチャック
の母材にセラミクスを用いて、耐久性を向上させ、その
表面にウエハより硬度が若干低く不均質構造でなく、か
つ母材との熱膨張率差が小さいポリフツ化エチレン系繊
維（特にテフロン）を押出成形法でコートすることによ
ってチャック上への異物付着を防止することが出来、更
に、平滑性と平面性を向上させる。これによって耐久性
があり、異物付着のない安定したウエハの平面矯正がで
きる。As described above, the durability is improved by using ceramics for the base material of the wafer chuck, the hardness of the surface is slightly lower than that of the wafer, the surface is not heterogeneous, and the heat with the base material is not increased. By coating a polyfluorinated ethylene-based fiber (particularly Teflon) having a small difference in expansion coefficient by an extrusion molding method, it is possible to prevent foreign substances from adhering to the chuck, and to further improve smoothness and flatness. As a result, it is possible to stably correct the flatness of the wafer, which is durable and free of foreign matter.
【図１】 本発明に係わるウエハチャックの外観図であ
る。FIG. 1 is an external view of a wafer chuck according to the present invention.
【図２】 図１のウエハチャックの部分断面図である。FIG. 2 is a partial sectional view of the wafer chuck of FIG.
【図３】 本発明の別の実施例の断面図である。FIG. 3 is a cross-sectional view of another embodiment of the present invention.
１；チャック表面、２；負圧溝、３；コート、４；負圧
供給穴、５；チャック母材、６；裏面、７；コート。1; chuck surface, 2; negative pressure groove, 3; coat, 4; negative pressure supply hole, 5; chuck base material, 6; back surface, 7; coat.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/68 H01L 21/027 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/68 H01L 21/027
Claims (2)
ウエハ吸着用の負圧溝を有し、母材をセラミックスで構
成したウエハチャックにおいて、該セラミックス母材の
表面をウエハより軟らかい高分子化合物でオーバーコー
トし、該高分子化合物のコート厚さは５μｍ〜３０μｍ
であることを特徴とするウエハチャック。1. A wafer chuck which is used in an exposure apparatus, has a negative pressure groove for adsorbing a wafer on a wafer mounting surface side, and has a base material made of ceramic. Overcoating with a compound, the coating thickness of the polymer compound is 5 μm to 30 μm
Wafer chuck, characterized in that it.
ウエハ吸着用の負圧溝を有し、母材をセラミックスで構
成したウエハチャックにおいて、該セラミックス母材の
表面をポリフッ化エチレン系繊維でオーバーコートし、
該コートの厚さは５μｍ〜３０μｍであることを特徴と
するウエハチャック。2. An exposure apparatus, comprising :
It has a negative pressure groove for wafer suction, and the base material is made of ceramics.
In the formed wafer chuck, the ceramic base material
Overcoat the surface with polyfluoroethylene fiber ,
Roux Ehachakku be <br/> wherein the thickness of the coating is 5 m to 30 m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23252091A JP3258042B2 (en) | 1991-08-21 | 1991-08-21 | Wafer chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23252091A JP3258042B2 (en) | 1991-08-21 | 1991-08-21 | Wafer chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0547909A JPH0547909A (en) | 1993-02-26 |
| JP3258042B2 true JP3258042B2 (en) | 2002-02-18 |
Family
ID=16940619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23252091A Expired - Fee Related JP3258042B2 (en) | 1991-08-21 | 1991-08-21 | Wafer chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3258042B2 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3017453B2 (en) | 1996-05-24 | 2000-03-06 | 株式会社リコー | Information recording / reproducing device |
| JPH10144777A (en) * | 1996-11-14 | 1998-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Vacuum suction device |
| AU1261699A (en) * | 1997-11-28 | 1999-06-16 | Nikon Corporation | Substrate retaining apparatus and exposure apparatus using the same |
| JP3356115B2 (en) * | 1999-05-20 | 2002-12-09 | ウシオ電機株式会社 | Resist curing equipment |
| JP4183945B2 (en) * | 2001-07-30 | 2008-11-19 | コバレントマテリアル株式会社 | Wafer heat treatment material |
| DE10235482B3 (en) * | 2002-08-02 | 2004-01-22 | Süss Microtec Lithography Gmbh | Device for fixing thin and flexible substrates |
| JP4028346B2 (en) * | 2002-10-17 | 2007-12-26 | 東京エレクトロン株式会社 | Liquid processing equipment |
| JP4499031B2 (en) * | 2005-12-27 | 2010-07-07 | 株式会社 電硝エンジニアリング | Chuck plate and manufacturing method of chuck plate |
| JP2008147275A (en) * | 2006-12-07 | 2008-06-26 | Disco Abrasive Syst Ltd | Conveyor for wafer |
| NL1036544A1 (en) | 2008-02-21 | 2009-08-24 | Asml Netherlands Bv | A lithographic apparatus having a chuck with a visco-elastic damping layer. |
| US8336188B2 (en) * | 2008-07-17 | 2012-12-25 | Formfactor, Inc. | Thin wafer chuck |
| NL2007768A (en) | 2010-12-14 | 2012-06-18 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
| EP2490073B1 (en) * | 2011-02-18 | 2015-09-23 | ASML Netherlands BV | Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder |
| NL2009487A (en) * | 2011-10-14 | 2013-04-16 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
| KR101652782B1 (en) | 2012-02-03 | 2016-08-31 | 에이에스엠엘 네델란즈 비.브이. | Substrate holder and lithographic apparatus |
| TWM546597U (en) * | 2015-10-12 | 2017-08-01 | 應用材料股份有限公司 | Substrate carrier for holding substrate |
| CN114921631A (en) * | 2022-04-12 | 2022-08-19 | 苏州芯默科技有限公司 | Anti-sticking loading disc with good effect for heat treatment furnace |
-
1991
- 1991-08-21 JP JP23252091A patent/JP3258042B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0547909A (en) | 1993-02-26 |
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