KR20110136240A - Supporting device for wafer and manufacturing method thereof - Google Patents

Supporting device for wafer and manufacturing method thereof Download PDF

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Publication number
KR20110136240A
KR20110136240A KR1020100056108A KR20100056108A KR20110136240A KR 20110136240 A KR20110136240 A KR 20110136240A KR 1020100056108 A KR1020100056108 A KR 1020100056108A KR 20100056108 A KR20100056108 A KR 20100056108A KR 20110136240 A KR20110136240 A KR 20110136240A
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KR
South Korea
Prior art keywords
coating layer
wafer
sic coating
layer
sic
Prior art date
Application number
KR1020100056108A
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Korean (ko)
Inventor
김종현
Original Assignee
주식회사 티씨케이
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Application filed by 주식회사 티씨케이 filed Critical 주식회사 티씨케이
Priority to KR1020100056108A priority Critical patent/KR20110136240A/en
Publication of KR20110136240A publication Critical patent/KR20110136240A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

PURPOSE: A wafer supporting apparatus and a manufacturing method thereof are provided to eliminate an air gap on the surface of a supporting apparatus made of an aluminum nitride material, thereby improving yield of a semiconductor manufacturing process. CONSTITUTION: A groove where a heater is inserted is arranged in the rear surface of a disk shape thermal conduction support layer(20) made of an aluminum nitride material. A plurality of pins is projected to an upward direction in the upper surface of the thermal conduction support layer. A silicon carbide(SiC) coating layer(50) placed in the upper surface of the multiple pins supports a wafer while touching the rear surface of the wafer. The SiC coating layer is arranged by coating SiC in the front surface of the thermal conduction support layer. The SiC coating layer is selectively placed only in a part touching with the rear surface of the wafer by selectively eliminating a part of the SiC coating layer placed in the upper part of the thermal conduction support layer.

Description

Wafer supporting device and manufacturing method thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer support apparatus and a method for manufacturing the same, and more particularly, to an apparatus for supporting a wafer in an apparatus for heating and curing a photoresist applied on a wafer for a photolithography process and a method for manufacturing the same.

In general, in the semiconductor manufacturing process, thin film deposition, photoresist coating, exposure and development, and etching processes are a series of continuous processes used to form a device pattern having a fine line width, and the photoresist is applied to a wafer. Before exposure, the photoresist undergoes a heat curing process called a photoresist.

The photoresist cured by such a process is patterned through a developing process after irradiation of selective light in the exposure apparatus.

In the baking process, the support device for supporting the semiconductor wafer is made of AlN material having high thermal conductivity in order to smoothly transfer the heat of the heater to the substrate.

However, the support device of the sintered AlN material has a lot of surface pores which are characteristics of the sintered material, and particles may remain in the pores, and the particles may be attached to the back surface of the wafer during the next wafer processing.

The particles attached to the back surface of the wafer may appear to be irrelevant to the manufacturing process of the device formed on the top surface of the wafer. However, defocusing errors may be caused by deterioration of the flatness of the wafer during curing and exposure of the photoresist. Will cause).

In particular, the finer the line width of the exposure apparatus, the more frequently the defocusing error caused by the flatness caused by the particles present on the back surface of the wafer is more frequent, and the improvement of the wafer supporting apparatus of the sintered AlN material is required.

However, we couldn't find a material with excellent thermal conductivity and competitive price like AlN material, and we tried to coat AlN material support device with low porosity material. There was a problem in that the coating layer was peeled off due to the difference in the coefficient of thermal expansion and could not be applied.

Disclosure of Invention Problems to be Solved by the Invention In view of the above problems, an object of the present invention is to provide a wafer support device and a method of manufacturing the same, by removing voids in the AlN support device so that particles are not attached to the back surface of the wafer.

In addition, another problem to be solved by the present invention, a coating layer having a porosity of 0 on the surface of the support device of AlN material, the wafer can prevent the deformation of the support device of AlN material, and prevent the peeling of the coating layer It is to provide a support device and a method of manufacturing the same.

The wafer support apparatus of the present invention for solving the above problems is a disk-shaped heat conduction support layer of AlN material having a groove into which a heater is inserted into the rear surface, a plurality of fins protruding upward from the upper surface of the heat conduction support layer, and It includes a SiC coating layer located on the upper surface of the plurality of fins for contact support of the back of the wafer.

In addition, the method of manufacturing a wafer support device of the present invention comprises the steps of: a) preparing a thermally conductive support layer of sintered AlN material, coating SiC on the entire surface of the thermally conductive support layer to form a SiC coating layer, and b) side and rear surfaces of the thermally conductive support layer. Selectively removing the SiC coating layer deposited thereon; and c) selectively removing a portion of the SiC coating layer located on the heat conduction support layer to selectively leave the SiC coating layer only at the portion in contact with the backside of the wafer. do.

According to the present invention, the wafer support device and the method of manufacturing the same as described above deposit SiC on an AlN support device to remove voids on the surface of the support device, and particles are attached to the back surface of the wafer and exposed by the particles. It is possible to prevent the occurrence of defects in the process, thereby improving the yield of the semiconductor manufacturing process.

In addition, the wafer support device and the manufacturing method of the present invention change the structure of the support device of the AlN material, and the SiC coating layer is selectively positioned only at the portion where the support device of the AlN material and the back side of the wafer, so that peeling may occur. There is an effect to reduce the, there is an effect to prevent the deformation of the support device of the AlN material.

1 is a cross-sectional configuration of a wafer support apparatus according to a preferred embodiment of the present invention.
2 is a cross-sectional view illustrating a state of use of the wafer support apparatus according to the preferred embodiment of the present invention.
3 to 6 are cross-sectional views showing the manufacturing process of the wafer support apparatus according to the preferred embodiment of the present invention.
7 is a cross-sectional configuration diagram of a result of post-processing a wafer support apparatus of the present invention manufactured through the manufacturing steps illustrated in FIGS. 3 to 6.

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the wafer support device and the method of manufacturing the wafer support device of the present invention configured as described above will be described in detail.

1 is a cross-sectional configuration diagram of a wafer support apparatus according to a preferred embodiment of the present invention, Figure 2 is a cross-sectional configuration diagram of the use state of the wafer support apparatus according to a preferred embodiment of the present invention.

1 and 2, the wafer support apparatus according to the preferred embodiment of the present invention is located on the support shaft 10, the heat conduction support layer 20 of AlN material protruding a plurality of fins 21 on the upper surface ), A heater 30 located in the rear groove 22 of the heat conductive support layer 20 to generate heat, and a rear surface of the wafer 40 located on the fin 21 of the heat conductive support layer 20. And a SiC coating layer 50 in direct contact with it.

Hereinafter, the configuration and operation of the wafer support apparatus according to the preferred embodiment of the present invention configured as described above in more detail.

First, the support shaft portion 10 is configured to be rotatable as necessary, and the upper portion of the support shaft portion 10 provides a flat surface so that the heat conductive support layer 20 can be raised.

The thermally conductive support layer 20 is sintered AlN, and a groove 22 is formed on the rear surface of the heat conductive support layer 20 to provide a space in which the heater 30 can be inserted.

The thermal expansion coefficient of sintered AlN is 6X10 -6 , and many voids are located on the surface due to the characteristics of the sintered material.

The upper surface of the heat conductive support layer 20 is not a flat surface, and a plurality of fins 21 protruding at predetermined intervals are provided. The fin 21 and the heat conduction support layer 20 are made of the same material, and are manufactured through the upper surface processing of the heat conduction support layer 20. This manufacturing method will be described in more detail later.

By the formation of the fin 21, the surface area of the upper surface of the thermal conductive support layer 20 is wider than that of the rear surface, and the warpage characteristics during the process are improved by the area difference.

The upper surface area of the fin 21 is preferably about 0.1 to 3% of the upper surface area of the thermally conductive support layer 20, and less than 0.1% of the fins 21 may not easily transfer heat from the thermally conductive support layer 20 to the wafer 40. If it exceeds 3%, the contact area between the fin 21 and the SiC coating layer 50 increases, and the photoresist (not shown) on the wafer 40 is cured due to the difference in thermal expansion coefficient between AlN and SiC. In the process, cracks may occur in the SiC coating layer 50 and may be peeled off.

The thermal expansion coefficient of SiC is 4X10 -6 , and SiC deposited by chemical vapor deposition has a theoretical porosity of zero.

As described above, the wafer support apparatus according to the present invention uses the SiC coating layer as the contact surface for supporting the wafer 40 to prevent particles from adhering to the back surface of the wafer 40 due to the voids, and is subsequently exposed. Also in the process, it is possible to prevent exposure failure due to the back particle of the wafer 40.

3 to 6 are cross-sectional views showing the manufacturing process of the wafer support apparatus according to the preferred embodiment of the present invention.

3 to 6, a method of manufacturing a wafer support apparatus according to a preferred embodiment of the present invention includes preparing a thermally conductive support layer 20 made of AlN, and depositing SiC on the entire surface of the thermally conductive support layer 20 by chemical vapor deposition. Forming a SiC coating layer 50 by depositing the SiC coating layer 50, and removing the SiC coating layer 50 on the side and the rear surface of the heat conductive support layer 20 to form a SiC coating layer 50 of the heat conductive support layer 20. Positioning only to the upper portion (Fig. 4), and selectively processing a portion of the upper surface of the SiC coating layer 50 in the depth direction to form a fin 21 on top of the heat conduction support layer 20 and the fin 21 Acquiring a SiC coating layer 50 located on the () (Fig. 5), and processing the back surface of the heat conductive support layer 20 to form a groove 22 into which the heater is inserted (Fig. 6). .

Hereinafter, a method of manufacturing a wafer support apparatus according to a preferred embodiment of the present invention configured as described above will be described in more detail.

First, as shown in FIG. 3, the thermal conductive support layer 20 is prepared. The heat conduction support layer 20 at this time is disk-shaped, and is manufactured by sintering AlN. It is a known fact that AlN must contain a sintering aid for densification due to its sinterability.

Next, SiC is deposited on the entire surface of the thermally conductive support layer 20 by chemical vapor deposition to form a SiC coating layer 50.

At this time, the temperature of the deposition process is preferably set to 1150 to 1200 ℃, it is deposited in the atmosphere supplied with hydrogen gas.

The thickness of the formed SiC coating layer 50 is preferably about 15 to 25㎛. When the thickness of the SiC coating layer 50 exceeds 25 μm, the SiC coating layer 50 may be peeled off. When the thickness of the SiC coating layer 50 is less than 15 μm, it may occur that voids in the thermal conductive support layer 20 of AlN may not be completely removed.

Next, as shown in FIG. 4, a portion coated on the rear and side surfaces of the heat conductive support layer 20 of the SiC coating layer 50 is removed by processing.

Subsequently, as shown in FIG. 5, after the mask treatment, the SiC coating layer 50 located on the upper surface of the heat conductive support layer 20 is processed by sand blasting to remove a part of the SiC coating layer 50, and the The lower side heat conduction support layer 20 of the removed SiC coating layer 50 is also subjected to a process of removing to a predetermined depth.

By the above processing, a plurality of fins 21 are formed on the upper surface of the heat conduction support layer 20, and the SiC coating layer 50 remaining only on the fins 21 can be obtained.

As described above, the sum of the upper surface areas of the fins 21 is preferably 0.1 to 3% of the heat conduction support layer 20. A SiC coating layer 50 is provided on the fins 21 to provide a wafer and The porosity of the contacting surface can be zero, thus preventing the back surface of the wafer from being contaminated with particles.

Next, as illustrated in FIG. 6, the rear surface of the heat conductive support layer 20 is processed to form a groove 22 into which the heater 30 illustrated in FIG. 2 may be inserted.

In the above description, a method of depositing SiC on the entire surface of the heat conduction support layer 20 having a flat top surface and forming the fin 21 and the SiC coating layer 50 on the fin 21 by post processing has been described.

First, the fin 21 is processed on top of the heat conductive support layer 20, and then the SiC coating layer 50 is deposited on the entire surface, and then processed to form the SiC coating layer 50 only on the upper part of the fin 21. Can be used.

This is because when the SiC coating layer 50 is deposited when the area of the top and bottom surfaces of the heat conductive support layer 20 is the same, warpage may occur in the heat conductive support layer 20, and before the SiC is deposited, After the fins are processed on the upper part, the area of the upper and lower surfaces is different, and then SiC is deposited to prevent deformation of the thermal conductive support layer 20.

7 is a cross-sectional configuration diagram of a result of post-processing a wafer support apparatus of the present invention manufactured through the manufacturing steps illustrated in FIGS. 3 to 6.

Referring to FIG. 7, the upper surface of the SiC coating layer 50 shown in FIG. 6 is flat, and thus the surface contact with the wafer 40 is made.

However, when the SiC coating layer 50 having a flat surface is polished, the amount of polishing of the side portion is higher than that of the center portion, and thus the SiC coating layer 50 is processed into a hemispherical shape.

The polished SiC coating layer 50 is in point contact with the back of the wafer 40 can further prevent the back contamination of the wafer 40.

As described above, a wafer supporting apparatus and a method of manufacturing the same according to the present invention have been described in detail with reference to preferred embodiments. However, the present invention is not limited to the above-described embodiments, and the claims and the detailed description and the appended claims. It is possible to carry out various modifications within the scope of one drawing and this also belongs to the present invention.

10: support shaft portion 20: heat conduction support layer
21: Pin 22: Home
30: heater 40: wafer
50: SiC coating layer

Claims (10)

A disk-shaped heat conducting support layer of AlN material having a groove into which a heater is inserted into a rear surface thereof;
A plurality of fins protruding upward from an upper surface of the heat conductive support layer; And
And a SiC coating layer disposed on an upper surface of the plurality of fins to contact and support the back surface of the wafer.
The method of claim 1,
Wafer support apparatus, characterized in that the total of the upper surface area of the plurality of fins is 0.1 to 3% of the upper surface area of the heat conductive support layer.
The method according to claim 1 or 2,
SiC coating layer is a wafer support device, characterized in that the thickness of 15 to 25㎛.
The method of claim 3,
The upper surface of the SiC coating layer,
Wafer support apparatus, characterized in that the central portion is a higher curved surface, the point contact with the back surface of the wafer.
a) preparing a disc-shaped heat conductive support layer of sintered AlN material, and coating SiC on the entire surface of the heat conductive support layer to form a SiC coating layer;
b) selectively removing the SiC coating layer deposited on the side and back of the thermally conductive support layer; And
c) selectively removing a portion of the SiC coating layer located above the thermally conductive support layer to selectively leave the SiC coating layer only in a portion in contact with the back surface of the wafer.
The method of claim 5,
The top surface of the thermally conductive support layer is flat, and in step c), the SiC coating layer is removed, and the lower side of the thermally conductive support layer of the removed SiC coating layer is removed to a predetermined depth, and the plurality of fins and the SiC coating layer positioned on the plurality of the fins are located above. Wafer support device manufacturing method characterized in that the remaining.
The method of claim 5,
A plurality of fins protruding upwardly are formed on an upper surface of the thermally conductive support layer, and in step c), the SiC coating layer deposited between the fin side and the fins is removed to leave the SiC coating layer positioned on the fin. Wafer support device manufacturing method characterized in that.
The method according to claim 6 or 7,
The total sum of the top surface areas of the plurality of fins is 0.1 to 3% of the top surface area of the heat conduction support layer.
The method of claim 8,
SiC coating layer is a wafer support device manufacturing method characterized in that deposited to a thickness of 15 to 25㎛.
The method of claim 8,
After performing step c), the method further comprises the step of grinding the remaining SiC coating layer to process the upper surface of the SiC coating layer to a higher curved surface of the center portion.
KR1020100056108A 2010-06-14 2010-06-14 Supporting device for wafer and manufacturing method thereof KR20110136240A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024691A (en) * 2016-05-30 2016-10-12 李岩 Electrostatic clamp
US10825710B2 (en) 2017-09-21 2020-11-03 Samsung Electronics Co., Ltd. Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same
CN113201728A (en) * 2021-04-28 2021-08-03 錼创显示科技股份有限公司 Semiconductor wafer bearing structure and metal organic chemical vapor deposition device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024691A (en) * 2016-05-30 2016-10-12 李岩 Electrostatic clamp
US10825710B2 (en) 2017-09-21 2020-11-03 Samsung Electronics Co., Ltd. Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same
US11631608B2 (en) 2017-09-21 2023-04-18 Samsung Electronics Co., Ltd. Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same
US11908727B2 (en) 2017-09-21 2024-02-20 Samsung Electronics Co., Ltd. Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same
CN113201728A (en) * 2021-04-28 2021-08-03 錼创显示科技股份有限公司 Semiconductor wafer bearing structure and metal organic chemical vapor deposition device
CN113201728B (en) * 2021-04-28 2023-10-31 錼创显示科技股份有限公司 Semiconductor wafer bearing structure and metal organic chemical vapor deposition device

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