JP4782744B2 - Adsorption member, adsorption device, and adsorption method - Google Patents

Description

  The present invention relates to an adsorbing member, an adsorbing apparatus, and an adsorbing method capable of supporting, adsorbing / holding or adsorbing, for example, a semiconductor wafer used in semiconductor manufacturing, a liquid crystal glass substrate used in liquid crystal manufacturing, and the like. It is.

  For example, in a semiconductor manufacturing process or an inspection process, a sample such as a semiconductor wafer made of silicon or the like is generally adsorbed and held a plurality of times on an adsorption member of a manufacturing apparatus or an inspection apparatus.

As a method of adsorbing an adsorbent as a sample to the adsorbing member, an adsorbing method corresponding to the type of manufacturing process has been proposed. In the step of adsorbing the adsorbent, for example, a step of polishing the adsorbent to a mirror surface without scratches, a photosensitive material called a resist coated on the adsorbent by light or electron beam with a uniform wavelength is used. There are a step of partially exposing, a step of removing the exposed resist, a step of inspecting an adsorbed body, and the like. Here, the adsorbing member that holds the adsorbent is exposed to a gas such as air, nitrogen, oxygen, and the pressure of the atmosphere in this case is from atmospheric pressure to high vacuum (1 × 10 ⁵ Pa to 1 × 10 ^−7). About Pa).

  According to the above process and the gas and pressure around the adsorption member, conventionally, the adsorption member is selected from a highly corrosion-resistant material, and the acting force for holding the adsorbent is mechanical force such as a spring, differential pressure, Had chosen from electrostatic force.

  Recently, since semiconductors have been miniaturized and densified, particles generated by frictional wear between the adsorbent and the adsorbing member adhere to the adsorbent when holding the adsorbent, and the adsorbing member. As a result, there are problems such as particles adhering to scratches, voids, and the like existing on the surface of the surface of the surface adhering to the adsorbent sporadically due to external forces such as vibration.

  When the object to be adsorbed is placed on the adsorbing member, local swell of the object to be adsorbed may occur due to particles being sandwiched between the back surface of the object to be adsorbed and the placement surface. Due to the local swell of the adsorbent, for example, when exposure is performed, the focus of the exposure is lost, the exposure pattern is blurred, and a semiconductor defect such as a short circuit of the circuit pattern formed on the adsorbent occurs. . In order to reduce the yield reduction due to this semiconductor defect, a method of reducing the contact area between the back surface of the attracted member and the mounting surface of the attracting member is employed.

For example, Patent Document 1 discloses a suction device in which a plurality of protrusions on a holding surface of a suction member made of ceramics are processed into a tapered shape, and the top surface of the protrusion is a point or an area of 0.02 mm ² or less. . Further, as the shape of the protrusion, a truncated cone shape, a truncated pyramid shape, and a stack of cylinders having different diameters are disclosed.

In addition, a technique for providing a film on the surface has been developed in order to compensate for the defects of the base. For example, in Patent Document 2, a surface layer having a predetermined thickness is formed on sintered SiC by chemical vapor deposition (CVD), and portions other than the portion in contact with the wafer are removed by etching. An adsorbing member having protrusions is disclosed.
Japanese Patent Laid-Open No. 10-242255 JP-A-10-92738

  Since the adsorbing member disclosed in Patent Document 1 is processed with ceramics to form protrusions, fine irregularities made of scratches, cracks, voids, etc. remain on the protrusions. When the particles remaining on the unevenness are scattered to the outside due to vibration or the like, or when vibration is applied to the adsorption member, the ceramic crystal in contact with the scratches and cracks or a part thereof peels off to become particles. Such particles may adhere to the wafer, which is an adsorbent, and adversely affect subsequent processes.

  Since the adsorbing member disclosed in Patent Document 2 is formed on a sintered SiC film by CVD and then etched to form protrusions, it is difficult to taper the protrusions. In particular, it is difficult to form the protrusions in a multistage shape. For this reason, many particles as described above may be generated. Similar to the above, it will have an adverse effect in the post-process and the like.

Therefore in view of the above problems, the suction member according to an embodiment of the present invention, there is provided a suction member formed with multiple supporting projection on the surface of the substrate, the supporting projection is, of the base forming a frustoconical Ri Na a protection layer covering the upper surface and the side surface, wherein the protective layer is, on the upper central portion of the base portion, smaller in width than the upper surface of the base, it and has a protruding portion having a plane top And

Adsorption apparatus of the present invention is formed by including the above-described suction member, and suction means for attracting the object adsorber adsorbing member.

Adsorption method of the present invention, with reference to the suction member, characterized by being adapted to support an object to be adsorbent in said support protrusions.

  According to the first adsorbing member of the present invention, the supporting protrusion includes the protective layer having a protruding portion on the center of the upper surface of the base portion having a truncated cone shape, and thus includes the base portion and the protective layer. The protrusion is firmly attached to the protrusion. For this reason, the particle | grains which generate | occur | produce by peeling of a protective layer can be decreased.

  According to the adsorption device and the adsorption method of the present invention, it is possible to provide an adsorption device and an adsorption method excellent in reliability and the like with less generation of particles.

  Hereinafter, the best embodiment of the present invention will be described in detail with reference to the drawings schematically shown.

<First adsorption member>
The first suction member according to the present invention will be described. FIG. 1A shows a perspective view of the adsorbing member of the present invention (the hatched portion shows a cross section with a part cut away). FIG. 1B shows an enlarged cross-sectional view of a supporting protrusion (hereinafter referred to as a supporting convex portion) 2 in the cross section A of FIG. In addition, the lower part in FIG.1 (b) is abbreviate | omitting illustration.

  The adsorbing member 10 having a disk shape is an adsorbing member in which a large number of supporting convex portions 2 are formed on the upper surface of the base 1. Here, the supporting convex portion 2 is formed by forming the protective layer 5 so that the central portion of the upper surface of the base portion 3 having a truncated cone shape becomes a protruding portion (hereinafter referred to as a small convex portion) 4. Thus, since the base 3 and the small convex portion 4 made of the protective layer 5 are firmly adhered, the protective layer 5 is not peeled off and the generated particles can be reduced.

  The substrate 1 is a main body of the adsorption member 10 and is required to have a characteristic that the adsorbed object placed thereon does not deform. Therefore, it is preferable that the base body 1 has high rigidity, high hardness, and high strength. The material of the substrate 1 is cordierite sintered body, zirconia sintered body, alumina sintered body, silicon nitride sintered body, aluminum nitride sintered body, crystallized glass, silicon carbide sintered body Etc. Of these, a silicon carbide based sintered body containing silicon carbide as a main component (greater than 50% by mass) is optimal. This is because the silicon carbide sintered body has high thermal conductivity and excellent heat dissipation, so that the temperature change of the adsorbent is small, and since it has electrical conductivity, it is difficult to generate static electricity and the particles are electrostatic. It is because it is excellent in being hard to adhere.

  The base 3 is a truncated cone-shaped protrusion formed on the upper surface of the base body 1 and formed of the same material as the base body 1. A protective layer 5 is formed on the surface of the substrate 1.

  The supporting convex part 2 is a convex part for adsorbing and holding an object to be adsorbed (not shown) on the upper surface of the substrate 1. In order to reduce the contact area between the object to be adsorbed and the substrate 1, the object to be adsorbed is supported by a large number of supporting convex portions 2. It is preferable to reduce the contact area in this way, when adsorbing the object to be adsorbed, particles do not intervene between the object to be adsorbed and the supporting convex part 2 to deteriorate the flatness of the object to be adsorbed. It is.

  The small convex portion 4 formed on the base portion 3 is formed of a protective layer 5, and the central portion of the upper surface of the base portion 3 is formed into the truncated cone-shaped small convex portion 4. By forming the small convex portion 4 at the center of the upper surface of the base portion 3, the contact area between the base 1 and the adsorbed body can be reduced. Further, since the small convex portion 4 is further formed on the base portion 3, the supporting convex portion 2 can be formed high in the vertical direction on the upper surface of the base. Since the supporting convex part 2 can be formed high in this way, the vacuum response when the object to be adsorbed is vacuum adsorbed (the time from when the object to be adsorbed is placed on the adsorbing member until it is vacuum adsorbed is shortened. ) Can be improved.

  The protective layer 5 is formed on the surface of the substrate 1. The function of the protective layer 5 is to prevent the particles that have been scratched into the substrate 1 and have entered fine irregularities from adhering to the adsorbent due to external forces such as vibration, and to reduce the particles generated from the surface of the protective layer 5. That is. Therefore, the protective layer 5 is required to have a dense surface, less irregularities, and good adhesion to the substrate 1.

  Examples of the method for forming the protective layer 5 include chemical vapor deposition (CVD), physical vapor deposition (PVD), plating, vapor deposition, plasma ion implantation, and ion plating. Of these, chemical vapor deposition is the best. This is because the protective layer to be formed is very dense and there are almost no fine irregularities on the surface, so that particles generated from the adsorbing member can be extremely reduced.

  The protective layer 5 is a film that can form, for example, a smooth surface of a boyless, and is required to be able to be formed without peeling or cracking of the film. In particular, if the difference in coefficient of thermal expansion between the substrate 1 and the protective layer 5 is large, the protective layer 5 may be peeled off or cracked during film formation, so that good film formation cannot be performed. It is important to reduce the difference in coefficient of thermal expansion.

  Examples of the material of the protective layer 5 include DLC (diamond-like carbon), amorphous silicon, and a silicon carbide film. DLC can form a film, but cannot completely remove scratches and holes on the surface of the substrate 1. Therefore, other materials are preferable. Of these, a silicon carbide film containing silicon carbide as a main component is preferable. The reason for this is that when adsorbing an adsorbent, heat dissipation is easy due to its high thermal conductivity, deformation is small due to its high rigidity, and because it is made of the same material as the base 1, there is a difference in the coefficient of thermal expansion from the base 1. This is because there is not. In addition, since a surface having almost no voids can be obtained with a silicon carbide film, it is difficult for particles to adhere to the surface of the supporting convex portion 2. Furthermore, static electricity charged on the surface can be released, and adhesion of particles can be reduced.

  When the thickness of the protective layer is 30 to 200 μm, it is preferable in the following points. Since the variation in the thickness of the protective layer 5 is small, the color tone of the protective layer 5 becomes uniform. Moreover, since the specific heat capacity of the protective layer 5 is small, the flatness of the top portions of the plurality of small convex portions 4 is not lowered. Furthermore, since the coefficient of thermal expansion of the protective layer 5 is uniform over the entire surface of the protective layer, stress is hardly generated in the protective layer 5, and peeling of the protective layer 5 is particularly prevented.

  The manufacturing method of the adsorption member 10 will be specifically described. The base 3 is formed on the base 1 using means such as grinding, sand blasting, and electric discharge machining.

  Next, after forming a protective layer to a thickness of 30 to 200 μm, the protective layer is processed into the shape of the small convex portion 4 by using means such as grinding, sandblasting, and electric discharge machining. Here, even if the substrate 1 is slightly warped during film formation or when the base portion 3 is processed, the top portions are ground in this way even if the top portions of the plurality of small convex portions 4 are not flush with each other. By doing so, a plurality of top portions can be repaired flush.

  The base 1 and the protective layer 5 are preferably made of the same material. This is because there is no difference in the coefficient of thermal expansion, and the amount of deformation of the adsorption member is reduced. In order to form the protective layer 5 with a thickness of 30 to 200 μm, it is preferable that the substrate 1 and the protective layer 5 are made of the same material. In particular, a method of forming a silicon carbide film on the silicon carbide substrate 1 by a chemical vapor deposition method to a thickness of 30 to 200 μm is preferable. This is because the amount of deformation of the adsorption member is reduced.

<Second adsorption member>
Next, the 2nd adsorption member concerning the present invention is explained. In addition, it is set as the aspect similar to the 1st adsorption | suction member mentioned above except the case where it does not demonstrate in particular. FIG. 2 shows a partially enlarged sectional view of the second adsorption member. The external appearance of the adsorbing member 10 is substantially the same as that of FIG. 1A described for the first adsorbing member, but the structure of the supporting convex portion for supporting the object to be adsorbed is greatly different.

  The adsorbing member 10 is an adsorbing member in which a large number of supporting convex portions 2 are formed on the surface of the base 1, and the supporting convex portion 2 is a base having a truncated cone shape in which a small convex portion 4 is formed at the center of the upper surface. 3 is formed by forming a protective layer 5 covering at least the surface of the small convex portion 4. The base 3 and the small convex portion 4 and the small convex portion 4 made of the protective layer 5 are firmly adhered. For this reason, the particle | grains which generate | occur | produce by peeling of a protective layer can be decreased. Further, since it is not always necessary to process the surface other than the top of the small convex portion 4, particles generated from other than the top are particularly reduced.

  The base 1 is the same as that described for the first adsorption member except for the shape of the base 3. The protective layer 5 is the same as that described in the first adsorption member except for the structure inside the small convex portion.

  The supporting convex portion 2 is formed on a base portion 3 having a truncated cone shape having a small convex portion 4 formed at the center of the upper surface. The supporting convex part 2 is composed of a base part 3, a small convex part 4, and a protective layer 5 formed along these surfaces.

  Thus, the deformation | transformation of the small convex part 2 can be suppressed by making the shape of the base 3 into a truncated cone shape. Further, the supporting convex portion 2 having the structure shown in FIG. 2 has the small convex portion 2 formed on the base portion 3 and the protective layer 5 formed thereon, so that the supporting convex portion 2 is vertically supported on the upper surface of the substrate. The convex portion 2 can be formed higher. Since the supporting convex portion 2 can be formed higher, the vacuum responsiveness when the object to be adsorbed is vacuum-adsorbed (to shorten the time from when the object to be adsorbed is placed on the adsorbing member until it is vacuum adsorbed). Further improvement can be achieved.

  The thickness of the protective layer 5 formed on the surface of the small convex portion 4 is thinner than the protective layer of the first adsorption member, and the thickness of the protective layer 5 is substantially uniform over the entire surface of the substrate 1. . For this reason, compared with the said 1st adsorption | suction member, it is further excellent in the following points.

  The variation in the thickness of the protective layer 5 is further reduced. The color tone of the protective layer 5 becomes more uniform. Since the specific heat capacity of the protective layer 5 is even smaller, it is less likely to be deformed when used under conditions affected by heat. Thereby, the flatness of the top part of the several small convex part 4 is hardly reduced. Since the thermal expansion coefficient of the protective layer 5 becomes more uniform over the entire surface of the protective layer, stress is not easily generated in the protective layer 5, and peeling of the protective layer 5 is most prevented.

  Since the protective layer 5 is not necessarily processed after the protective layer is formed by CVD or the like, the smoothness of the surface of the protective layer 5 can be further improved sufficiently. The reason is as follows.

  Since the protective layer formed by the CVD method has various crystal orientations, the atomic density differs depending on the crystal orientation, and the resistance during grinding is anisotropic. For example, since the (111) plane has a high atomic density and a high grinding resistance in terms of Miller index, it is harder to process than other crystal orientation planes. For this reason, when a silicon carbide film formed by, for example, CVD is sandblasted, a large number of irregularities are formed on the processed surface, and fine particles may enter the irregularities and reattach to the adsorbent.

  The adsorbing member 10 having the supporting convex portion 2 shown in FIG. 2 can sufficiently improve the smoothness of the surface of the protective layer 5 unless the protective layer is processed after the protective layer 5 is formed by CVD. .

<Third adsorption member>
The 3rd adsorption member of the present invention is explained. Unless otherwise specified, the first adsorption member is the same as that described above. FIG. 3 shows a partially enlarged sectional view of the adsorption member 10.

  The adsorbing member 10 is an adsorbing member in which a large number of supporting convex portions 2 are formed on the surface of the base 1, and the supporting convex portion 2 has a small convex portion 4 whose upper portion is an elongated cylindrical shape, and a lower portion having a conical shape. It consists of a base 3 that has an expanding shape, and a protective layer 5 is formed on these surfaces.

  The base 3 and the protective layer 5 are firmly adhered. For this reason, the particle | grains which generate | occur | produce by peeling of a protective layer can be decreased very much. Further, since it is not always necessary to process the surface other than the top of the supporting convex portion 2, particles generated from other than the top are particularly reduced. Furthermore, since the distance between the top and the supporting convex portion 2 can be increased in the vertical direction of the substrate 1, the space formed between them can be widened. As a result, when the object to be adsorbed is vacuum-adsorbed This space can be reached to a desired degree of vacuum in a short time. The material of the substrate 1 and the material and thickness of the protective layer 5 are the same as those described for the second adsorption member.

  The supporting convex portion 2 has a concave curved surface in which the small convex portion 4 and the base portion 3 are integrally formed and a protective layer 5 on the top of the small convex portion. For this reason, while being able to raise the rigidity of the convex part for support, the contact area of a to-be-adsorbed body and the adsorption | suction member 10 can be made small.

  Similar to the second adsorbing member, the thickness of the protective layer 5 in the portion formed on the surface of the small convex portion 4 is thinner than the top of the protective layer of the first adsorbing member, and the thickness of the protective layer 5 is smaller. The thickness is substantially uniform over the entire surface of the substrate 1. For this reason, it is superior to the first adsorption member in the same manner as the second adsorption member.

  The adsorbing member 10 shown in FIG. 3 can be manufactured as follows. After forming the base 3 and the small protrusions 4 on the substrate 1 using means such as grinding or sandblasting, a protective layer covering the surfaces of the base 3 and the small protrusions 4 is formed to a thickness of 30 to 200 μm.

  The first and second suction members are more advantageous in terms of the rigidity and strength of the supporting convex portion 2 than the third suction member because the base 3 has a truncated cone shape. .

<The more preferable aspect etc. of an adsorption member>
Next, a more preferable aspect of the first and second adsorption members will be described. FIG. 4 is a side view showing a state where the periphery of the top surface of the top of the small convex portion 4 is chamfered.

  As shown in the figure, since the upper surface periphery 6 that is the top of the supporting convex portion 2 constituting the adsorbing member is chamfered, even if the object to be adsorbed contacts the supporting convex portion 2 of the adsorbing member, Strong stress is not locally applied to the adsorbent. Such contact of the object to be adsorbed with the supporting convex portion 2 occurs, for example, when the object to be adsorbed is adsorbed and transported.

  Thereby, the particle | grains by which a to-be-adsorbed body is scraped by the adsorption | suction member 10 can be decreased. For this chamfering, for example, a polishing method using a diamond grindstone or the like may be used.

  FIG. 5 shows a state where the periphery of the upper surface is chamfered at the upper part of the base of the adsorption member described in the third adsorption member. Since the upper surface periphery 6 is chamfered in this adsorbing member, local strong stress is not applied to the adsorbent to be in contact with the adsorbing member. For this reason, it is possible to reduce particles generated by the object to be adsorbed by the adsorbing member. The chamfering may be performed by a known polishing method such as a diamond grindstone.

  Next, the preferable form of the said 3rd adsorption | suction member of this invention is demonstrated. The adsorbing member 10 obtained by chamfering the upper surface periphery 6 of the upper portion that is the top of the base 3 does not locally apply stress to the adsorbed member that contacts the adsorbing member 10, so that the adsorbed member is scraped by the adsorbing member 10. This can be prevented as much as possible.

  Each of base 1 and supporting convex portion 2 is preferably formed of silicon carbide as a main component. This reason will be supplemented. The ceramic whose main component is silicon carbide as the substrate 1 can have a thermal conductivity of 150 W / (m · K) or more at room temperature, so that sufficient heat can be passed through the adsorbing member when heat is locally applied to the object to be adsorbed. As a result, it is suppressed that the adsorbent is thermally expanded and distorted. For this reason, for example, when the wafer is exposed, it is possible to suppress deterioration in exposure accuracy due to heat generation. Here, the thermal conductivity at room temperature is a thermal conductivity measured in the range of approximately 15 to 30 ° C, preferably 22 to 24 ° C. Silicon carbide can maintain a high thermal conductivity even in an environment exceeding room temperature. For example, it can maintain a thermal conductivity of 60 W / (m · K) or higher even in applications at 600 ° C. or higher.

  In order to improve the mechanical strength and further reduce the particles, the average crystal grain size of the ceramic mainly composed of silicon carbide is preferably in the range of 3 to 10 μm. This is because if the thickness is less than 3 μm, the mechanical strength and rigidity are low, and the flatness of the placed adsorbent may not be accurately maintained. In addition, if the average crystal grain size is larger than 10 μm, a large amount of voids may remain between the crystal particles, so that the particles remaining in the voids may adhere to the adsorbent. More preferably, the crystal grain size is in the range of 3 to 7 μm.

When the base 3 and the protective layer 5 are formed of ceramics mainly composed of silicon carbide, the density of the substrate 1 is 3.18 g / cm ³ or more, the Young's modulus is 440 GPa or more, and the specific rigidity is 135 GPa · cm ³ / g or more. can do. Such an adsorbing member 10 can maintain the flatness of the object to be adsorbed placed on the top of the small convex portion 4 with high accuracy.

The linear expansion coefficient of the substrate 1 is preferably 2.6 × 10 ⁻⁶ / ° C. or less at room temperature.

  Further, the height of the supporting convex portion 2 is desirably 0.5 mm or more. Thereby, the vacuum response at the time of vacuum-adsorbing a to-be-adsorbed body improves.

  In addition, in order to ensure the grinding allowance for the processing of the flatness of the top surface of the adsorption member, the height of the small convex portion 4 is preferably 0.05 mm or more.

<Adsorption device and adsorption method>
The adsorbing device of the present invention comprises the above-described excellent adsorbing member 10 and adsorbing means for adsorbing an adsorbent to the adsorbing member 10. Here, the adsorption means refers to a means that can use a mechanical force such as a spring, a differential pressure, an electrostatic force, or the like as an acting force for holding the object to be adsorbed.

  The adsorption device of the present invention includes, for example, an adsorption member 10 having an intake hole for adsorbing an object to be adsorbed, and an intake means such as a vacuum pump for inhaling air from the intake hole. For example, the present invention can be applied to a vacuum chuck device.

  Further, the adsorption method of the present invention is characterized in that the object to be adsorbed is supported by the supporting convex portion 2 using an adsorption member.

  By these adsorption device and adsorption method, there is no peeling or cracking of the protective layer 5, and there is no peeling or cracking of the protective layer 5, so that a long life can be achieved and the generation of particles can be reduced as much as possible.

  Examples in which the present invention is further embodied will be described below.

<Example 1>
A formed body made of silicon carbide was prepared by a known method, and the formed body was sintered in 1900 to 2100 ° C. in Ar gas to prepare a silicon carbide sintered body having a diameter of 400 mm. The final shape of the supporting convex portion 2 was the shape shown in FIG.

  Further, before the film formation by chemical vapor deposition, the height of the supporting convex portions is 0.6 mm, the pitch is 2 mm, the base diameter is 0.38 mm, and the base diameter is 120 μm smaller than the target shape. Processed by sandblasting.

  Next, a 60 μm silicon carbide film was formed at 1300 ° C. by chemical vapor deposition. Then, it processed again by sandblasting, and the small convex part was made into 0.05 mm in height and diameter 0.15 mm.

  Then, after chamfering 0.02 mm around the upper surface of the small convex portion by a known polishing method such as a diamond grindstone, the top portion of the convex portion for support is lapped to obtain a flatness of 3 μm or less. The adsorbent to be obtained was obtained.

  Using the obtained adsorbent, a test in which the adsorbent was repeatedly heated at 500 ° C. for 10 times in a high-temperature bath was performed. As a result, there was no peeling or cracking on the film on the supporting convex portion. .

<Example 2>
In the same manner as in Example 1, a silicon carbide sintered body was produced. The final shape of the supporting convex portion was the shape shown in FIG.

  Prior to film formation by chemical vapor deposition, the height of the supporting projections is 0.6 mm, the pitch is 2 mm, the height of the small projections 4 is 0.05 mm, and the diameter of the base 3 is 0.38 mm in diameter. The diameter of the small convex part 4 was 0.05 mm, and the diameter of the base part was processed by sandblasting with a size 120 μm smaller than the target shape.

  Next, a 60 μm silicon carbide film was formed by the same chemical vapor deposition method as in Example 1. After film formation, after chamfering 0.02 mm around the upper surface of the small convex portion by a known polishing method such as a diamond grindstone, the top of the convex portion for support is lapped to obtain a flatness of 3 μm or less. An adsorbent comprising:

  Using the obtained adsorbent, a test in which the adsorbent was repeatedly heated at 500 ° C. for 10 times in a high-temperature bath was performed. As a result, there was no peeling or cracking on the film on the supporting convex portion. .

<Example 3>
In the same manner as in Example 1, a silicon carbide sintered body was produced. The final shape of the supporting convex portion was the shape shown in FIG.

  The height of the supporting protrusions was processed to 0.6 mm, the pitch was 2 mm, and the diameter of the small protrusions was 0.05 mm by electric discharge machining.

  Next, a 60 μm silicon carbide film was formed by the same chemical vapor deposition method as in Example 1. After film formation, after chamfering 0.02 mm around the upper surface of the small convex portion by a known polishing method such as a diamond grindstone, the top portion of the supporting convex portion is lapped to obtain a flatness of 3 μm or less. The adsorbent to be obtained was obtained.

  Using the obtained adsorbent, a test in which the adsorbent was repeatedly heated at 500 ° C. for 10 times in a high-temperature bath was performed. As a result, there was no peeling or cracking on the film on the supporting convex portion. .

<Comparative example>
On the other hand, the adsorption member 20 shown in FIG. 6 was manufactured as a comparative example. 6A is a perspective view of the adsorbing member 20, and FIG. 6B is a partially enlarged sectional view of FIG.

  The adsorbing member 20 is an adsorbing member in which a large number of supporting convex portions 22 are formed on the upper surface of the base body 21, and the supporting convex portions 22 are formed at the center of the upper surface of the truncated cone portion 23 and the outer truncated cone portion 23. The small convex portion 24 is used.

  The supporting convex portion 22 was formed by grinding a protective layer 25 made of silicon carbide and having a thickness of 800 μm formed by chemical vapor deposition.

  A molded body was obtained by molding according to a known technique, and sintered in an inert atmosphere such as Ar at 1900 to 2100 ° C. to obtain a sintered body having a diameter of 400.

  Next, an 800 μm silicon carbide film was formed by chemical vapor deposition. After the film formation, the supporting convex portions 22 were formed by sandblasting with a height of 0.6 mm and a pitch of 2 mm. After processing, the small convex portion 24 was chamfered by 0.02 mm by a known polishing method such as a diamond grindstone, and then the adsorbent mounting surface was wrapped to make the flatness 3 μm or less.

  The protective layer 25 formed of a silicon carbide film by a chemical vapor deposition method has a very large thickness of 800 μm, and thus has a large variation in thickness and crystal orientation. For this reason, after film formation, remarkable color unevenness occurred on the adsorbed member mounting surface of the adsorbing member 20. This did not disappear even after the support protrusions 22 were formed by sandblasting. Further, the protective layer 25 had a large residual stress in the film, and when the supporting convex portion 22 was formed, a large number of cracks were generated, and these defects occurred, so that a good product could not be obtained.

  As described above, it is confirmed that Examples 1 to 3 are effective for producing an excellent adsorbing member whose surface is covered with a protective layer, particles can be reduced, and the protective layer does not peel off. did it.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which illustrates typically one Embodiment of the 1st adsorption | suction member of this invention, (a) is the perspective view which cut and showed a part of adsorption | suction member of this invention, (b) is the same It is the A section expanded sectional view of figure (a). It is a figure explaining one embodiment of the 2nd adsorption member of the present invention typically, and is an expanded sectional view of the projection for support which constitutes the 2nd adsorption member. It is a figure explaining one embodiment of the 3rd adsorption member of the present invention typically, and is an expanded sectional view of the projection for support which constitutes the 3rd adsorption member. It is a figure which illustrates typically the suitable example of the 1st, 2nd adsorption | suction member of this invention, and is a partial side view of the support protrusion which comprises an adsorption | suction member. It is a figure which illustrates typically the suitable example of the 3rd adsorption member of this invention, and is a partial side view of the support protrusion which comprises an adsorption member. It is a figure which illustrates the conventional adsorption | suction member typically, (a) is the perspective view which cut and showed a part of adsorption member, (b) is the A section expanded sectional view of the figure (a). is there.

Explanation of symbols

1, 21: Base 2, 22: Supporting protrusion (supporting convex part)
3, 23: Base 4, 24: Protruding part (small convex part)
5, 25: Protective layer 6: Small convex part upper surface periphery 7, 27: Small convex part upper surface 10, 20: Adsorption member

Claims (9)

A suction member formed with multiple supporting projection on the surface of the substrate,
The supporting protrusion, Ri Na comprises a protective layer covering the upper surface and the side surface of the base portion forming a frustoconical,
The adsorbing member , wherein the protective layer has a protruding portion having a width smaller than the upper surface of the base portion and having a flat surface on the top portion on the central portion of the upper surface of the base portion . The suction member according to claim 1, wherein the protruding portion has a truncated cone shape. The adsorption member according to claim 1, wherein the protective layer, the base, and the base are made of the same material. The adsorbing member according to claim 3, wherein the protective layer, the base, and the base are mainly composed of silicon carbide. The protective layer is a silicon carbide film formed by chemical vapor deposition
The adsorbing member according to claim 4, wherein the base and the base are silicon carbide sintered bodies. The adsorption member according to claim 1, further comprising an intake hole for adsorbing the adsorbed body. A suction member according to any one of claims 1 to 5, the suction device comprising a suction means for attracting the adsorbing member of the adsorber. An adsorbing device comprising the adsorbing member according to claim 6 and an intake means for causing intake through the intake hole. Using suction member according to any one of claims 1 to 6, the adsorption method is characterized in that so as to support the object to be adsorbent in said support protrusions.

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