JPH0547909A - Wafer chuck - Google Patents
Wafer chuckInfo
- Publication number
- JPH0547909A JPH0547909A JP23252091A JP23252091A JPH0547909A JP H0547909 A JPH0547909 A JP H0547909A JP 23252091 A JP23252091 A JP 23252091A JP 23252091 A JP23252091 A JP 23252091A JP H0547909 A JPH0547909 A JP H0547909A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chuck
- coat
- matrix
- negative pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体回路素子製造用
の露光装置等において、ウエハを保持し平面矯正するチ
ャックの表面構造及びその母材に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface structure of a chuck which holds a wafer and straightens it in an exposure apparatus for manufacturing semiconductor circuit elements, and a base material thereof.
【0002】[0002]
【従来の技術】従来、半導体素子製造用に用いられてい
るウエハ支持のチャックの材質は、アルミ系の金属にア
ルマイト(商品名)メッキしたものであった。それ以外
には、ステンレスやアルマイト系セラミクスが用いられ
ていた。2. Description of the Related Art Conventionally, the material of a wafer supporting chuck used for manufacturing a semiconductor element is an aluminum-based metal plated with alumite (trade name). Other than that, stainless steel and alumite ceramics were used.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来例のアルミにアルマイトメッキしたものでは、母材が
半導体素子の主な材料となるシリコンよりも軟らかいた
めに、キズや打痕が付き、耐久性に問題があった。ステ
ンレスを材料にしたチャックもアルミと同様の欠点があ
った。そこで最近では、耐久性を向上させるために、硬
い材料であるセラミックスが用いられるようになってき
た。しかしながら、セラミックスは製造工程において、
均一な粒子(数μm 程度の大きさ)を焼き固めて作るた
めに、不均質構造になる。この場合、表面を研削やラッ
プで仕上げても、表面は凹凸形状になる。この凹形状の
中にウエハ裏面の感光材料等の異物が入り込み易い。こ
の異物のため、ウエハの平面矯正が正常にできなくな
る。この場合、凹凸形状のため一度入った異物が容易に
取れない。更にその凸凹形状が表面の平滑性を失わせる
ためにウエハの搬送が円滑に行われない。However, in the aluminum of the above-mentioned conventional example, which is anodized, the base material is softer than silicon, which is the main material of the semiconductor element, so that it has scratches and dents and has a long durability. I had a problem with. The chuck made of stainless steel had the same drawbacks as aluminum. Therefore, recently, in order to improve durability, ceramics, which is a hard material, has been used. However, in the manufacturing process of ceramics,
Since uniform particles (size of several μm) are baked and solidified, they have a heterogeneous structure. In this case, even if the surface is finished by grinding or lapping, the surface becomes uneven. Foreign matter such as the photosensitive material on the back surface of the wafer easily enters the concave shape. Due to this foreign matter, the flatness of the wafer cannot be properly corrected. In this case, the foreign matter once entered cannot be easily removed due to the uneven shape. Further, since the uneven shape loses the smoothness of the surface, the wafer cannot be transferred smoothly.
【0004】本発明は上記従来技術の欠点に鑑みなされ
たものであって、耐久性を向上させるとともに異物付着
を防止し安定したウエハの平面矯正が可能なウエハチャ
ックの提供を目的とする。The present invention has been made in view of the above-mentioned drawbacks of the prior art, and an object of the present invention is to provide a wafer chuck capable of improving durability, preventing foreign matter from adhering, and performing stable wafer straightening.
【0005】[0005]
【課題を解決するための手段および作用】前記目的を達
成するため、本発明によれば、母材に、硬度が大きく耐
久性があるセラミックスを用い、その表面をウエハより
硬度が大きくかつ、母材以上の硬度があり、セラミック
スのような不均質構造でない材質でコートした。In order to achieve the above object, according to the present invention, a ceramic having high hardness and durability is used as a base material, and its surface has a hardness higher than that of a wafer and a mother material. It is coated with a material that is harder than the material and does not have a heterogeneous structure such as ceramics.
【0006】このセラミックスの不均質構造は、焼結の
結果、多結晶状態を得る時に粒界で数μm から数10μ
m の段差と大きさを持つことになるわけで、セラミック
スの焼結過程で除去することが困難なものである。従っ
てオーバーコート層を形成する場合に真空加熱蒸着法、
CVD法等が用いられるが段差の大きいセラミックスの
表面に、例えば数10μm の薄膜を金属、あるいは金属
酸化物等で形成することは難しい。そこで本発明では該
オーバーコート層を形成する際に、そのような無機物を
用いるのではなく、段差の大きいセラミックスの場合に
は有機物のオーバーコート材を用いる。これにより大き
な段差は容易に平面化可能になる。また有機オーバーコ
ート材の場合には平面性の向上のみならず平滑性の向上
も図られる。このような有機物オーバーコート材とし
て、例えば、ポリテトラフルオロエチレン(商品名、テ
フロン)、ポリ塩化ビニル等のビニル系樹脂及びポリシ
ロキサン、ポリジメチルシロキサン等のシリコン樹脂、
2−4ジクロルフェノキシ酢酸等の熱硬化性尿素樹脂、
ポリエチレンテレフタレート、その他既知のフォトレジ
スト等が有効に用いられる。しかしながら、本発明の目
的のためには、テフロン(商品名、アメリカE.I.du Pon
tde Numours & Co. Inc. 製ポリフッ化エチレン系繊維)
が最も適した形で利用できる。この理由は平面性のみ
ならず平滑性に優れていること及び樹脂の硬化性も大で
あり耐摩耗性も良いことである。耐熱性、耐薬品性が良
いことも、金属のオーバーコート材にないメリットであ
る。The inhomogeneous structure of this ceramic has several μm to several tens of μ at grain boundaries when a polycrystalline state is obtained as a result of sintering.
Since it has a step and a size of m, it is difficult to remove it during the ceramics sintering process. Therefore, when forming the overcoat layer, the vacuum heating vapor deposition method,
Although the CVD method or the like is used, it is difficult to form a thin film of, for example, several tens of μm with a metal or a metal oxide on the surface of a ceramic having a large step. Therefore, in the present invention, when forming the overcoat layer, such an inorganic material is not used, but in the case of a ceramic having a large step, an organic overcoat material is used. As a result, a large step can be easily flattened. Further, in the case of the organic overcoat material, not only flatness but also smoothness can be improved. Examples of such organic overcoat materials include vinyl resins such as polytetrafluoroethylene (trade name, Teflon) and polyvinyl chloride, and silicone resins such as polysiloxane and polydimethylsiloxane,
2-4 thermosetting urea resin such as dichlorophenoxyacetic acid,
Polyethylene terephthalate and other known photoresists are effectively used. However, for the purposes of the present invention, Teflon (trade name, American EI du Pon
(Polyethylene fluoride fiber manufactured by tde Numours & Co. Inc.)
Is available in the most suitable form. The reason is that not only the flatness but also the smoothness is excellent, and the curability of the resin is great and the abrasion resistance is also good. Good heat resistance and chemical resistance are also advantages that metal overcoat materials do not have.
【0007】[0007]
【実施例】本発明の第1の実施例を図1および図2に示
す。図1はウエハを保持及び平面矯正するためのチャッ
クの外観を示し、図2はその断面を示す。1は、ウエハ
と接するチャック表面であり、この表面1上にウエハ
(図示しない)が置かれる。ウエハの保持は、負圧溝2
によって行われる。負圧の供給は穴4によってチャック
裏面6から行われる。また、ウエハの平面矯正は溝2を
介して真空吸着することによりチャック表面1によって
行われる。チャック表面1はコート3で覆われる。本発
明の特徴はこのコート3であり、ウエハの保持面側に配
置される。コート3の材質は、ウエハより軟らかい高分
子化合物、特にテフロン(商品名、デュポン社)が有効
である。テフロン膜は加圧成形焼成法、押出成形法によ
って形成する。電気的特性にも優れ高温(325℃)に
も安定で熱可塑性も示さない。更に、表面は摩擦係数が
小さいので平滑性に優れている。コート層の厚さは10
μm 〜60μm であり、これはコート形成後、チャック
表面1の平面度を得るための研削及びラップ量を含めた
厚さである。研削及びラップ後のコート厚さは5μm 〜
30μm でありこのチャック表面はウエハ表面粗さと同
等に仕上げられ、その時に母材との熱膨張率差による破
壊を避けるために、できるだけ薄いことが望ましい。負
圧溝2の加工は、チャックの研削及びラップ後に行う。
チャックの母材5の材質は、主に、多孔質構造であるA
l2O3系のセラミクスである。母材5はその硬度がウエ
ハと同等か、それ以上であり、コートとの熱膨張率の差
が10ppm 以下のものが望ましい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention is shown in FIGS. FIG. 1 shows the external appearance of a chuck for holding and flattening a wafer, and FIG. 2 shows its cross section. Reference numeral 1 denotes a chuck surface that contacts the wafer, and a wafer (not shown) is placed on the surface 1. The wafer is held by the negative pressure groove 2
Done by The negative pressure is supplied from the chuck back surface 6 through the hole 4. Further, the plane correction of the wafer is performed by the chuck surface 1 by vacuum suction through the groove 2. The chuck surface 1 is covered with a coat 3. The feature of the present invention is the coat 3, which is arranged on the wafer holding surface side. As the material of the coat 3, a polymer compound softer than the wafer, particularly Teflon (trade name, manufactured by DuPont) is effective. The Teflon film is formed by a pressure molding firing method and an extrusion molding method. It has excellent electrical properties, is stable at high temperatures (325 ° C), and does not exhibit thermoplasticity. Further, the surface has a small coefficient of friction and thus has excellent smoothness. The thickness of the coat layer is 10
μm to 60 μm, which is the thickness including the amount of grinding and lapping for obtaining the flatness of the chuck surface 1 after forming the coat. The coat thickness after grinding and lapping is 5 μm ~
The thickness of the chuck is 30 μm, and the surface of the chuck is finished to have the same roughness as the surface of the wafer. The negative pressure groove 2 is processed after grinding and lapping the chuck.
The material of the chuck base material 5 is mainly a porous structure A
It is an l 2 O 3 series ceramics. It is desirable that the base material 5 has a hardness equal to or higher than that of the wafer and a difference in coefficient of thermal expansion from the coat of 10 ppm or less.
【0008】本発明の別の実施例の断面を図3に示す。
この実施例では、コート7はウエハに接する面だけでな
くチャック表面全面を覆う。このコート7はチャックの
溝2を加工後に形成しコート後、研削、ラップする。図
3の構造は、図2の構造に比べて、ウエハと接する面積
が1mm2 以下になった時、または巾が0.5mm以
下になる時に、母材から、コート層が剥がれにくい特徴
を持つ。A cross section of another embodiment of the present invention is shown in FIG.
In this embodiment, coat 7 covers the entire chuck surface, not just the surface that contacts the wafer. The coat 7 is formed after processing the groove 2 of the chuck, and after coating, grinding and lapping are performed. The structure of FIG. 3 has a characteristic that the coat layer is less likely to be peeled from the base material when the area in contact with the wafer is 1 mm 2 or less or the width is 0.5 mm or less, as compared with the structure of FIG. ..
【0009】[0009]
【発明の効果】以上に説明したように、ウエハチャック
の母材にセラミクスを用いて、耐久性を向上させ、その
表面にウエハより硬度が若干低く不均質構造でなく、か
つ母材との熱膨張率差が小さいポリフツ化エチレン系繊
維(特にテフロン)を押出成形法でコートすることによ
ってチャック上への異物付着を防止することが出来、更
に、平滑性と平面性を向上させる。これによって耐久性
があり、異物付着のない安定したウエハの平面矯正がで
きる。As described above, the durability is improved by using ceramics as the base material of the wafer chuck, the surface of which has a hardness slightly lower than that of the wafer and does not have a non-homogeneous structure, and has a heat treatment with the base material. It is possible to prevent foreign matters from adhering to the chuck by coating the polyethylene-based fibers (particularly Teflon) having a small difference in expansion coefficient by an extrusion molding method, and further improve smoothness and flatness. As a result, it is possible to perform a stable flat surface correction of the wafer which is durable and has no foreign matter attached.
【図1】 本発明に係わるウエハチャックの外観図であ
る。FIG. 1 is an external view of a wafer chuck according to the present invention.
【図2】 図1のウエハチャックの部分断面図である。2 is a partial cross-sectional view of the wafer chuck of FIG.
【図3】 本発明の別の実施例の断面図である。FIG. 3 is a cross-sectional view of another embodiment of the present invention.
1;チャック表面、2;負圧溝、3;コート、4;負圧
供給穴、5;チャック母材、6;裏面、7;コート。1; chuck surface, 2; negative pressure groove, 3; coat, 4; negative pressure supply hole, 5; chuck base material, 6; back surface, 7; coat.
Claims (2)
を有し、母材をセラミックスで構成したウエハチャック
において、該セラミックス母材の表面を高分子化合物で
オーバーコートしたことを特徴とするウエハチャック。1. A wafer chuck having a negative pressure groove for adsorbing a wafer on the wafer mounting surface side and a base material made of ceramics, wherein the surface of the ceramic base material is overcoated with a polymer compound. Wafer chuck to do.
系繊維からなることを特徴とする請求項1のウエハチャ
ック。2. The wafer chuck according to claim 1, wherein the polymer compound is made of polyfluoroethylene fiber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23252091A JP3258042B2 (en) | 1991-08-21 | 1991-08-21 | Wafer chuck |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23252091A JP3258042B2 (en) | 1991-08-21 | 1991-08-21 | Wafer chuck |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0547909A true JPH0547909A (en) | 1993-02-26 |
JP3258042B2 JP3258042B2 (en) | 2002-02-18 |
Family
ID=16940619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23252091A Expired - Fee Related JP3258042B2 (en) | 1991-08-21 | 1991-08-21 | Wafer chuck |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3258042B2 (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10144777A (en) * | 1996-11-14 | 1998-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Vacuum suction device |
WO1999028957A1 (en) * | 1997-11-28 | 1999-06-10 | Nikon Corporation | Substrate retaining apparatus and exposure apparatus using the same |
US6137760A (en) * | 1996-05-24 | 2000-10-24 | Ricoh Co., Ltd. | Information recording and reproducing apparatus |
JP2000331910A (en) * | 1999-05-20 | 2000-11-30 | Ushio Inc | Resist hardening device |
FR2828008A1 (en) * | 2001-07-30 | 2003-01-31 | Toshiba Ceramics Co | Wafer treatment component comprises a base material of isotropic material coated with a ceramic film |
WO2004036633A1 (en) * | 2002-10-17 | 2004-04-29 | Tokyo Electron Limited | Liquid processing device |
US6966560B2 (en) * | 2002-08-02 | 2005-11-22 | Suss Microtec Lithography Gmbh | Device for fixing thin and flexible substrates |
JP2007180094A (en) * | 2005-12-27 | 2007-07-12 | Densho Engineering Co Ltd | Chuck plate |
JP2008147275A (en) * | 2006-12-07 | 2008-06-26 | Disco Abrasive Syst Ltd | Conveyor for wafer |
JP2009200488A (en) * | 2008-02-21 | 2009-09-03 | Asml Netherlands Bv | Lithographic apparatus having chuck with viscoelastic damping layer |
US20100013169A1 (en) * | 2008-07-17 | 2010-01-21 | Bjorn Monteen | Thin wafer chuck |
JP2012129524A (en) * | 2010-12-14 | 2012-07-05 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing substrate holder |
JP2012175104A (en) * | 2011-02-18 | 2012-09-10 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing substrate holder |
JP2013089956A (en) * | 2011-10-14 | 2013-05-13 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and substrate holder manufacturing method |
US9442395B2 (en) | 2012-02-03 | 2016-09-13 | Asml Netherlands B.V. | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder |
KR20180056788A (en) * | 2015-10-12 | 2018-05-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Substrate carrier for active / passive bonding and de-bonding of substrates |
CN114921631A (en) * | 2022-04-12 | 2022-08-19 | 苏州芯默科技有限公司 | Anti-sticking loading disc with good effect for heat treatment furnace |
-
1991
- 1991-08-21 JP JP23252091A patent/JP3258042B2/en not_active Expired - Fee Related
Cited By (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6137760A (en) * | 1996-05-24 | 2000-10-24 | Ricoh Co., Ltd. | Information recording and reproducing apparatus |
US6198712B1 (en) | 1996-05-24 | 2001-03-06 | Ricoh Company Ltd. | Disk apparatus including an inner cover and an outer cover with latching portions |
JPH10144777A (en) * | 1996-11-14 | 1998-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Vacuum suction device |
WO1999028957A1 (en) * | 1997-11-28 | 1999-06-10 | Nikon Corporation | Substrate retaining apparatus and exposure apparatus using the same |
JP2000331910A (en) * | 1999-05-20 | 2000-11-30 | Ushio Inc | Resist hardening device |
WO2000072364A1 (en) * | 1999-05-20 | 2000-11-30 | Ushio Denki Kabushiki Kaisya | Apparatus for curing resist |
US6605814B1 (en) | 1999-05-20 | 2003-08-12 | Ushiodenki Kabushiki Kaisha | Apparatus for curing resist |
FR2828008A1 (en) * | 2001-07-30 | 2003-01-31 | Toshiba Ceramics Co | Wafer treatment component comprises a base material of isotropic material coated with a ceramic film |
US6966560B2 (en) * | 2002-08-02 | 2005-11-22 | Suss Microtec Lithography Gmbh | Device for fixing thin and flexible substrates |
WO2004036633A1 (en) * | 2002-10-17 | 2004-04-29 | Tokyo Electron Limited | Liquid processing device |
JP2007180094A (en) * | 2005-12-27 | 2007-07-12 | Densho Engineering Co Ltd | Chuck plate |
JP4499031B2 (en) * | 2005-12-27 | 2010-07-07 | 株式会社 電硝エンジニアリング | Chuck plate and manufacturing method of chuck plate |
JP2008147275A (en) * | 2006-12-07 | 2008-06-26 | Disco Abrasive Syst Ltd | Conveyor for wafer |
JP2009200488A (en) * | 2008-02-21 | 2009-09-03 | Asml Netherlands Bv | Lithographic apparatus having chuck with viscoelastic damping layer |
US8928860B2 (en) | 2008-02-21 | 2015-01-06 | Asml Netherlands B.V. | Lithographic apparatus having a chuck with a visco-elastic damping layer |
US20100013169A1 (en) * | 2008-07-17 | 2010-01-21 | Bjorn Monteen | Thin wafer chuck |
US8336188B2 (en) * | 2008-07-17 | 2012-12-25 | Formfactor, Inc. | Thin wafer chuck |
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US11235388B2 (en) | 2012-02-03 | 2022-02-01 | Asml Netherlands B.V. | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder |
US11376663B2 (en) | 2012-02-03 | 2022-07-05 | Asml Netherlands B.V. | Substrate holder and method of manufacturing a substrate holder |
US11754929B2 (en) | 2012-02-03 | 2023-09-12 | Asml Netherlands B.V. | Substrate holder and method of manufacturing a substrate holder |
US9442395B2 (en) | 2012-02-03 | 2016-09-13 | Asml Netherlands B.V. | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder |
US10245641B2 (en) | 2012-02-03 | 2019-04-02 | Asml Netherlands B.V. | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder |
KR20180056788A (en) * | 2015-10-12 | 2018-05-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Substrate carrier for active / passive bonding and de-bonding of substrates |
JP2018533212A (en) * | 2015-10-12 | 2018-11-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Substrate carrier for active / passive coupling and decoupling of substrates |
CN114921631A (en) * | 2022-04-12 | 2022-08-19 | 苏州芯默科技有限公司 | Anti-sticking loading disc with good effect for heat treatment furnace |
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