JPH0686662B2 - CVD susceptor - Google Patents
CVD susceptorInfo
- Publication number
- JPH0686662B2 JPH0686662B2 JP1284797A JP28479789A JPH0686662B2 JP H0686662 B2 JPH0686662 B2 JP H0686662B2 JP 1284797 A JP1284797 A JP 1284797A JP 28479789 A JP28479789 A JP 28479789A JP H0686662 B2 JPH0686662 B2 JP H0686662B2
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- Prior art keywords
- susceptor
- surface roughness
- wafer
- measured
- cvd
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Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、CVDで使用するサセプターに関する。TECHNICAL FIELD The present invention relates to a susceptor used in CVD.
（従来の技術） 従来、CVD用サセプターとしては、黒鉛又は炭化珪素の
成形体を機械加工したもの、機械加工後に純化処理を行
って表面加工精度を▽▽〜▽▽▽（表面粗さ計のプロー
ブ先端径５μｍにより測定した値がRa2〜５μｍ）とし
たもの、あるいは上記基材にガラス状炭素、パイロティ
ックグラファイト、炭化珪素を被覆したものが知られて
いる。(Prior Art) Conventionally, as a CVD susceptor, a molded body of graphite or silicon carbide is machined, and a purification treatment is performed after the machining to improve the surface processing accuracy ▽▽ ~ ▽▽▽ (of a surface roughness meter). It is known that the value measured with a probe tip diameter of 5 μm is Ra 2 to 5 μm), or that the above substrate is coated with glassy carbon, pyrotic graphite, or silicon carbide.
（発明が解決しようとする課題） しかしながら、上記被覆を施こさないサセプターにおい
ては、CVDによりウエハ上にシリコン酸化膜やシリコン
窒化膜を成膜する際に、サセプター表面が粗いために、
外部ヒータ加熱や高周波加熱によりサセプターに与えら
れた熱がウエハに均一に伝わらないのでウエハ内あるい
はウエハ間において均一な膜の形成が困難である。ま
た、ガラス状炭素被覆サセプターにおいて、表面が平坦
なために、シリコン酸化膜やシリコン窒化膜を成膜する
際に、サセプター上に堆積するシリコン酸化膜やシリコ
ン窒化膜がサセプター表面から剥がれ形成膜中に取り込
まれる等の欠点があった。(Problems to be solved by the invention) However, in the susceptor not subjected to the coating, when the silicon oxide film or the silicon nitride film is formed on the wafer by CVD, the susceptor surface is rough,
Since the heat applied to the susceptor by the external heater heating or the high frequency heating is not uniformly transferred to the wafer, it is difficult to form a uniform film within the wafer or between the wafers. In addition, since the glass-like carbon-coated susceptor has a flat surface, the silicon oxide film or silicon nitride film deposited on the susceptor peels off from the susceptor surface when the silicon oxide film or silicon nitride film is formed. There was a defect such as being taken into.
（課題を解決するための手段） 本発明は、上記欠点を解決することを目的としたもの
で、以下を要旨とするCVD用サセプターである。(Means for Solving the Problem) The present invention is intended to solve the above-mentioned drawbacks, and is a CVD susceptor having the following gist.
1.ウエハの接触部とそれ以外の表面粗さが以下のとおり
である黒鉛基材からなることを特徴とするCVD用サセプ
ター。1. A CVD susceptor comprising a contact portion of a wafer and a graphite base material having the following other surface roughness.
表面粗さ計のプローブ先端径1.5mmにより測定した値がR
a0.7μｍ以下 〔ウエハの接触部以外の面の表面粗さ〕 表面粗さ計のプローブ先端径５μｍにより測定した値が
Ra2〜10μｍ 2.黒鉛基材にガラス状炭素被覆を施こしてなることを特
徴とする請求項１記載のCVD用サセプター。The value measured with the probe tip diameter of the surface roughness meter is 1.5 mm is R
a0.7 μm or less [surface roughness of the surface other than the contact part of the wafer] The value measured by the probe tip diameter of the surface roughness meter is 5 μm.
Ra2 to 10 μm 2. The CVD susceptor according to claim 1, wherein the graphite base material is coated with glassy carbon.
以下、さらに詳しく本発明について説明する。The present invention will be described in more detail below.
本発明において、ウエハ接触部とは、ウエハ設置用のポ
ケットがない第４図に示したサセプター１にあっては、
ウエハの半径マイナス0mm〜プラス10mmまでの範囲を指
し（第４図の符号２）、この範囲ではウエハのエッジ効
果によりガスの流れ、プラズマの立ちかたが不均一とな
りサセプターに付着するCVD膜が非常に薄く膜の剥離は
起き得ない。一方、第５図に示したようなウエハ設置用
のポケット６を有するシリコンエピタキシャル用サセプ
ター５にあっては、そのポケット内を指す。In the present invention, the wafer contact portion means, in the susceptor 1 shown in FIG. 4 having no pocket for mounting a wafer,
This refers to the range of the wafer radius from minus 0 mm to plus 10 mm (reference numeral 2 in FIG. 4). In this range, the gas flow due to the edge effect of the wafer, the standing of plasma becomes nonuniform, and the CVD film attached to the susceptor is Very thin film delamination cannot occur. On the other hand, in the case of the silicon epitaxial susceptor 5 having the pocket 6 for mounting a wafer as shown in FIG. 5, it refers to the inside of the pocket.
ウエハの接触部の表面粗さを表面粗さ計のプローブ先端
計1.5mmにより測定した値がRa0.7μｍ以下好ましくはRa
0.4μｍ以下にすることにより、外部ヒーター及び高周
波加熱によりサセプターに与えられた熱が均一にウエハ
伝わり形成膜の均一性が向上する。The surface roughness of the contact part of the wafer is Ra 0.7 μm or less, preferably Ra 0.7 μm or less.
When the thickness is 0.4 μm or less, the heat given to the susceptor by the external heater and the high frequency heating is uniformly transferred to the wafer, and the uniformity of the formed film is improved.
ウエハの接触部以外の面の表面粗さを表面粗さ計のプロ
ーブ先端径５μｍにより測定した値がRa2〜10μｍ好ま
しくはRa4〜７μｍにすることによりサセプター表面に
堆積されるシリコン酸化膜やシリコン窒化膜の剥離が生
じなくなり剥離物質が形成膜中に取込まれなくなる。By setting the surface roughness of the surface other than the contact portion of the wafer to be Ra2 to 10 μm, preferably Ra4 to 7 μm measured by the probe tip diameter of the surface roughness meter of 5 μm, the silicon oxide film or silicon nitride film deposited on the surface of the susceptor. The peeling of the film does not occur and the peeling substance is not taken into the formed film.
以上のように、ウエハの接触部とそれ以外の面との表面
粗さが異なったものにするには、後述のように、サンド
ペーパーやサンドブラスト等により、表面を粗くしたり
滑らかにしたりすることによって行うことができる。As described above, in order to make the surface roughness of the contact portion of the wafer different from the surface roughness of the other surface, roughening or smoothing the surface with sandpaper, sandblast, etc., as described later. Can be done by
ここで、表面粗さ計のプローブ先端径５μｍと表面粗さ
計のプローブ先端径1.5mmで測定した表面粗さの違いに
ついて説明する。Here, the difference in the surface roughness measured with the probe tip diameter of the surface roughness meter of 5 μm and the probe tip diameter of the surface roughness meter of 1.5 mm will be described.
第１図に示したような表面形状を持った黒鉛基材がある
とする。これを、表面粗さ計のプローブ先端計５μｍで
測定すると第２図に示したような波形が得られ、表面の
大きなうねりは表面粗さ計の特徴で目立たなくなり、表
面の小さな粗れが測定される。一方、表面粗さ計のプロ
ーブ先端径1.5mmで測定すると第３図に示したような波
形が得られ、表面の小さな粗れは測定されず表面の大き
なうねりが観察される。It is assumed that there is a graphite base material having a surface shape as shown in FIG. When this is measured with a probe tip of a surface roughness meter, 5 μm, a waveform as shown in Fig. 2 is obtained. Large undulations on the surface are not noticeable due to the characteristics of the surface roughness meter, and small roughness on the surface is measured. To be done. On the other hand, when the probe tip diameter of the surface roughness meter is measured at 1.5 mm, a waveform as shown in FIG. 3 is obtained, and small surface roughness is not measured, but large surface waviness is observed.
そして、通常、表面粗さ計のプローブ先端径５μｍで測
定したときRaが２〜10μｍとなる表面のRmaxは15〜50μ
ｍであり、また、表面粗さ計のプローブ先端径1.5mmで
測定したときRaが0.7μｍ以下となる表面のRmaxは７μ
ｍ以下となる。And, when measured with a probe tip diameter of a surface roughness meter of 5 μm, Ra is 2 to 10 μm, and Rmax of the surface is 15 to 50 μm.
m, and when measured with a probe tip diameter of the surface roughness meter of 1.5 mm, Ra is 0.7 μm or less, and Rmax of the surface is 7 μm.
m or less.
以上のようにして得られた本発明のサセプターはその表
面全面をガラス状炭素で被覆すれば黒鉛ダストの発生が
なく、異物を含まない優れた膜を安定してつくれるよう
にもなる。これを表面粗さを違えていない従来の黒鉛基
材表面にCVDによって被覆を形成させると、その黒鉛基
材の表面粗さ程度には関係なくコーティング後の表面粗
さは、表面粗さ計のプローブ先端径1.5mmにより測定し
た値がRa1μｍ以上になってしまい、ウエハ内あるいは
ウエハ間において均一な膜の形成が困難になってしまう
のである。By covering the entire surface of the susceptor of the present invention obtained as described above with glassy carbon, graphite dust is not generated, and an excellent film containing no foreign matter can be stably formed. When a coating is formed on the surface of a conventional graphite base material whose surface roughness is not different by CVD, the surface roughness after coating is measured by a surface roughness meter regardless of the surface roughness of the graphite base material. The value measured with the probe tip diameter of 1.5 mm becomes Ra 1 μm or more, which makes it difficult to form a uniform film within the wafer or between the wafers.
次に、図面を参照しながら、本発明の製造法の一例を説
明する。Next, an example of the manufacturing method of the present invention will be described with reference to the drawings.
まず、第４図に図示したようなプラズマCVD用サセプタ
ー１を従来どおり表面精度▽▽〜▽▽▽で機械加工す
る。サセプターはこの形状に限定することなく、例え
ば、パンケーキ状、毎葉式形状のものであってもよい。
このとき、サセプターの表面粗さは表面粗さ計の先端径
1.5mmで測定するとRa0.9〜３μｍとなる。次に、サセプ
ターのウエハの接触部２のみをサンドペーパー、工業用
パットなどの研磨材を用いて表面粗さ計の先端径1.5mm
で測定した表面粗さがRa0.7μｍ以下好ましくはRa0.4μ
ｍ以下となるように表面研磨をすれば本発明のサセプタ
ーを得ることができる。First, the susceptor 1 for plasma CVD as shown in FIG. 4 is machined with surface accuracy ▽▽ to ▽▽▽ as usual. The susceptor is not limited to this shape and may be, for example, a pancake-shaped or leaf-shaped type.
At this time, the surface roughness of the susceptor is the tip diameter of the surface roughness meter.
Ra of 0.9 to 3 μm is measured at 1.5 mm. Next, only the contact part 2 of the wafer of the susceptor is sanded, using an abrasive such as an industrial pad, the tip diameter of the surface roughness meter is 1.5 mm.
The surface roughness measured by Ra is 0.7 μm or less, preferably Ra 0.4 μm.
The surface of the susceptor of the present invention can be obtained by polishing the surface so that the susceptor has a thickness of m or less.
また、サセプター全面をサンドペーパー、工業用パット
等の研磨材を用いて表面粗さ計の先端径1.5mmで測定し
た表面粗さがRa0.7μｍ以下好ましくはRa0.4μｍ以下と
なるように表面を研磨した後、ウエハの接触部のみをガ
ムテープ、ボール紙等でマスクしサンドブラスト、サン
ドペーパー等でそれ以外の面３を表面粗さ計の先端径５
μｍで測定した表面粗さがRa2〜10μｍ以下好ましくはR
a4〜７μｍ以下となるように表面をあらすことによって
も得ることができる。なお、符号４はピンである。In addition, the surface of the susceptor should be Ra 0.7 μm or less, preferably Ra 0.4 μm or less, when the surface roughness was measured with a tip diameter of 1.5 mm of a surface roughness meter using an abrasive such as sandpaper or an industrial pad. After polishing, mask only the contact area of the wafer with gum tape, cardboard, etc., and use sandblast, sandpaper, etc. to cover the other surface 3 with the tip diameter 5 of the surface roughness meter.
The surface roughness measured in μm is Ra2 to 10 μm or less, preferably R
It can also be obtained by roughening the surface so that the thickness becomes a4 to 7 μm or less. Reference numeral 4 is a pin.
第５図に示した形状のシリコンエピタキシャル用サセプ
ター５についても上記手順に準じて製造することができ
る。なお、第５図において、符号６はウエハ設置用のポ
ケット（ウエハの接触部となる部分）、符号７はウエハ
の接触部以外の面、符号８はガス導入口である。The silicon epitaxial susceptor 5 having the shape shown in FIG. 5 can also be manufactured according to the above procedure. In FIG. 5, reference numeral 6 is a wafer setting pocket (a portion that becomes a contact portion of the wafer), reference numeral 7 is a surface other than the contact portion of the wafer, and reference numeral 8 is a gas introduction port.
以上のようにして得られた本発明のサセプターの表面は
必要により特公昭52−39684号公報に記載の方法を用い
てガラス状炭素で被覆する。以下その被覆方法について
簡単に説明する。If necessary, the surface of the susceptor of the present invention obtained as described above is coated with glassy carbon by the method described in JP-B-52-39684. The coating method will be briefly described below.
ガラス状炭素の原料であるポリ塩化ビニールを不活性化
雰囲気中、350〜450℃で熱分解しピッチ状の炭素前駆体
を得る。この炭素前駆体をトリクレンなどの有機溶剤に
溶解しサセプター表面に塗布し真空もしくは不活性化雰
囲気中、1000℃以上の温度で焼成する。この塗布−焼成
工程を繰り返し行ない、サセプター表面をガラス状炭素
で被覆する。高純度が要求される用途に対しては、必要
に応じて例えば1600℃以上で塩素、フッ素等のハロゲン
ガスを導入することによって高純度のサセプターを得る
ことができる。Polyvinyl chloride, which is a raw material for glassy carbon, is pyrolyzed at 350 to 450 ° C. in an inert atmosphere to obtain a pitch-like carbon precursor. This carbon precursor is dissolved in an organic solvent such as trichlene, applied on the surface of the susceptor, and fired at a temperature of 1000 ° C. or higher in a vacuum or an inert atmosphere. This coating-firing process is repeated to coat the surface of the susceptor with glassy carbon. For applications requiring high purity, a high-purity susceptor can be obtained by introducing a halogen gas such as chlorine or fluorine at 1600 ° C. or higher as necessary.
（実施例） 以下、実施例と比較例をあげてさらに具体的に本発明を
説明する。(Examples) Hereinafter, the present invention will be described more specifically with reference to Examples and Comparative Examples.
実施例１ 第４図に示すプラズマCVD用サセプター（800×150×4m
m）を表面精度▽▽で機械加工した。このとき表面粗さ
計のプローブ先端径５μｍにより測定した表面粗さはRa
4.57μｍであった。このサセプターのウエハの接触部の
みをサンドペーパー（＃1000）で仕上げた。このとき表
面粗さ計のプローブ径1.5mmで測定したウエハの接触部
の表面粗さはRa0.63μｍであった。Example 1 A susceptor for plasma CVD shown in FIG. 4 (800 × 150 × 4 m
m) was machined with surface accuracy ▽▽. At this time, the surface roughness measured with a probe tip diameter of 5 μm of the surface roughness meter is Ra
It was 4.57 μm. Only the contact part of the susceptor wafer was finished with sandpaper (# 1000). At this time, the surface roughness of the contact portion of the wafer measured with a probe diameter of the surface roughness meter of 1.5 mm was Ra 0.63 μm.
このようにしてウエハの接触部とそれ以外の面の表面粗
さが異なるプラズマCVD用サセプターをつくった。In this way, a plasma CVD susceptor having different surface roughness between the contact portion of the wafer and the other surface was prepared.
実施例２ 実施例１で用いたサセプターのウエハの接触部のみを工
業用パッド（スコッチブライト7448）で鏡面に仕上げ
た。このとき表面粗さ計のプローブ径1.5mmで測定した
ウエハの接触部の表面粗さはRa0.37μｍであった。Example 2 Only the contact portion of the wafer of the susceptor used in Example 1 was mirror-finished with an industrial pad (Scotchbright 7448). At this time, the surface roughness of the contact portion of the wafer measured with a probe diameter of the surface roughness meter of 1.5 mm was Ra 0.37 μm.
このようにしてウエハ接触部とそれ以外の面の表面粗さ
が異なるプラズマCVD用サセプターをつくった。In this way, a plasma CVD susceptor having different surface roughness between the wafer contact portion and the other surface was produced.
実施例３ 実施例２で用いたサセプターの表面に塩化ビニールを窒
素雰囲気中390℃熱分解しタール状のピッチ炭素前駆体
を得、トリクレンにこの炭素前駆体を溶解し（15重量
％）、この溶液をサセプター表面に塗布した後、真空雰
囲気中、1200℃で焼成した。この塗布−焼成工程を４回
繰り返し行なってガラス状炭素をサセプター表面に被覆
した。ガラス状炭素被覆後のウエハの接触部の表面粗さ
は、表面粗さ計のプローブ径1.5mmで測定した値がRa0.3
4μｍで、それ以外の面の表面粗さは、表面粗さ計のプ
ローブ径５μｍで測定した値がRa4.51μｍであるプラズ
マCVD用サセプターをつくった。Example 3 Vinyl chloride was pyrolyzed at 390 ° C. in a nitrogen atmosphere on the surface of the susceptor used in Example 2 to obtain a tar-like pitch carbon precursor, and this carbon precursor was dissolved in trichlene (15 wt%). After applying the solution to the surface of the susceptor, it was baked at 1200 ° C. in a vacuum atmosphere. This coating-firing process was repeated 4 times to coat the glassy carbon on the surface of the susceptor. The surface roughness of the contact part of the wafer after coating with glassy carbon is Ra0.3 measured with a probe diameter of the surface roughness meter of 1.5 mm.
A susceptor for plasma CVD having a surface roughness of 4 μm and a surface roughness of the other surface measured by a probe diameter of a surface roughness meter of 5 μm was Ra 4.51 μm was prepared.
比較例１ 実施例１において、サセプターのウエハの接触部の面仕
上げを施していないプラズマCVD用サセプターを製作し
た。このサセプターのウエハの接触部の表面粗さは、表
面粗さ計のプローブ先端径1.5mmで測定した値はRa1.09
μｍであった。Comparative Example 1 In Example 1, a plasma CVD susceptor was manufactured in which the surface of the contact portion of the susceptor wafer was not surface-finished. The surface roughness of the contact part of the wafer of this susceptor was Ra1.09 when measured with a probe tip diameter of the surface roughness meter of 1.5 mm.
was μm.
比較例２ 実施例１において、サセプターの全面を工業用パッド
（スコッチブライト7448）で鏡面に仕上げた。このサセ
プターの表面粗さは、表面粗さ計のプローブ先端径５μ
ｍで測定した値はRa1.25μｍであった。Comparative Example 2 In Example 1, the entire surface of the susceptor was mirror-finished with an industrial pad (Scotch Bright 7448). The surface roughness of this susceptor is 5 μm of the probe tip diameter of the surface roughness meter.
The value measured in m was Ra1.25 μm.
比較例３ 比較例２で得られたサセプターの表面を実施例３と同じ
方法で塗布−焼成を４回繰り返し行ないガラス状炭素を
被覆したプラズマCVD用サセプターをつくった。このサ
セプターの表面粗さは、表面粗さ計のプローブ先端径５
μｍで測定した値はRa1.09μｍであった。Comparative Example 3 The surface of the susceptor obtained in Comparative Example 2 was coated and fired four times in the same manner as in Example 3 to prepare a glass-carbon-coated susceptor for plasma CVD. The surface roughness of this susceptor is the probe tip diameter 5 of the surface roughness meter.
The value measured in μm was Ra 1.09 μm.
上記６例のサセプターの性能を評価するため、第６図に
示すように、４インチSiウエハを５枚ずつセットし、ベ
ルジャー内に入れ外部加熱によりサセプターを300℃で
加熱しサセプター間に高周波13.56MHzをかけSiH4とNH3
（モル比0.8）を原料ガスとしてベルジャー内に導入し
真空度0.5torrで高周波プラズマを立て、Siウエハ上に
シリコン窒化膜を1.2μｍ形成したときの膜厚のバラツ
キをステインエッチング法により調べた。また、異物量
（＞0.3μｍ）と、サセプター上に付着したシリコン窒
化膜の剥がれについて顕微鏡を用いて測定した。それら
の結果を表１に示す。In order to evaluate the performance of the above six examples, as shown in FIG. 6, four 4-inch Si wafers were set and placed in a bell jar to heat the susceptor at 300 ° C. by external heating, and a high frequency of 13.56 was applied between the susceptors. MHz over SiH 4 and NH 3
(Mole ratio 0.8) was introduced into a bell jar as a source gas, a high frequency plasma was generated at a vacuum degree of 0.5 torr, and a variation in film thickness when a silicon nitride film of 1.2 μm was formed on a Si wafer was examined by a stain etching method. Further, the amount of foreign matter (> 0.3 μm) and the peeling of the silicon nitride film attached on the susceptor were measured using a microscope. The results are shown in Table 1.
実施例４ 第５図に示すシリコンエピタキシャル用サセプター（φ
600×16mm）を表面精度▽▽で機械加工し、ウエハの接
触部のみを工業用パッド（スコッチブライト7448）で鏡
面に仕上げた。このサセプターの表面にガラス状炭素を
実施例１と同様な方法で被覆した。このとき、ウエハの
接触部の表面粗さは、表面粗さ計のプローブ径1.5mmで
測定した値がRa0.34μｍで、それ以外の面の表面粗さ
は、表面粗さ計のプローブ径５μｍで測定した値はRa4.
52μｍであった。Example 4 A silicon epitaxial susceptor (φ
600 × 16mm) was machined with surface accuracy ▽▽, and only the contact part of the wafer was mirror-finished with an industrial pad (Scotchbright 7448). The surface of this susceptor was coated with glassy carbon in the same manner as in Example 1. At this time, the surface roughness of the contact portion of the wafer was Ra 0.34 μm when measured with a probe diameter of the surface roughness meter of 1.5 mm, and the surface roughness of other surfaces was 5 μm of the probe diameter of the surface roughness meter. The value measured by Ra4.
It was 52 μm.
比較例４ 実施例２で得られたサセプターにガラス状炭素被覆をせ
ず、その代わりに、厚み100μのSiCをCVDによってサセ
プター全面に被覆してSiCコートサセプターを得た。こ
のとき、サセプターの表面粗さは、表面粗さ計のプロー
ブ径1.5mmで測定した値がRa1.05μｍであった。Comparative Example 4 The susceptor obtained in Example 2 was not coated with glassy carbon, but instead, SiC having a thickness of 100 μ was coated on the entire surface of the susceptor by CVD to obtain a SiC-coated susceptor. At this time, the surface roughness of the susceptor was Ra 1.05 μm when measured with a probe diameter of 1.5 mm of a surface roughness meter.
上記２例のサセプターに、５インチSiウエハを10枚セッ
トし、高周波13.56MHzによって1000℃に加熱しH2をキャ
リヤーとしてSiH4を流し、Siウエハ上にシリコンエピタ
キシャル膜を30μｍ形成した時の膜厚のバラツキをステ
インエッチング法により測定した。それらの結果を表１
に示す。Ten 5-inch Si wafers were set on the susceptor of the above two examples, heated to 1000 ° C. with a high frequency of 13.56 MHz, and SiH 4 was flown using H 2 as a carrier to form a 30 μm thick silicon epitaxial film on the Si wafer. The thickness variation was measured by the stain etching method. The results are shown in Table 1.
Shown in.
（発明の効果） 本発明のCVD用サセプターを用いてCVDを行うと、形成膜
の均一性が高まるので、形成膜の歩留りが向上し生産コ
ストを低減させることができる。また、形成膜中には剥
離物質等の異物の混入も少ない。 (Effects of the Invention) When CVD is performed using the CVD susceptor of the present invention, the uniformity of the formed film is improved, so that the yield of the formed film is improved and the production cost can be reduced. Further, foreign matter such as a peeling substance is less mixed in the formed film.
第１図〜第３図は、黒鉛基材の表面形状の例である。 第４図は、本発明でのプラズマCVD用サセプターの１例
を示す平面図である。 第５図は、本発明のシリコンエピタキシャル用サセプタ
ーの一例を示すものであり、第５図Ａは平面図、第５図
ＢはＸ−Ｘ断面図である。 第６図は、プラズマCVD装置の概略斜視図である。 1:プラズマCVD用サセプター 2:ウエハの接触部 3:ウエハの接触部以外の面 4:ピン 5:シリコンエピタキシャル用サセプター 6:ポケット 7:ウエハの接触部以外の面 8:ガス導入口 9:CVD用サセプター 10:Siウエハ 11:外部ヒーター 12:石英管 13:ガス導入口1 to 3 are examples of the surface shape of the graphite base material. FIG. 4 is a plan view showing an example of a plasma CVD susceptor according to the present invention. FIG. 5 shows an example of a silicon epitaxial susceptor of the present invention. FIG. 5A is a plan view and FIG. 5B is a sectional view taken along line XX. FIG. 6 is a schematic perspective view of a plasma CVD apparatus. 1: Plasma CVD susceptor 2: Wafer contact area 3: Surface other than wafer contact area 4: Pin 5: Silicon epitaxial susceptor 6: Pocket 7: Surface other than wafer contact area 8: Gas inlet 9: CVD Susceptor 10: Si wafer 11: External heater 12: Quartz tube 13: Gas inlet
Claims (2)
が以下のとおりである黒鉛基材からなることを特徴とす
るCVD用サセプター。 〔ウエハの接触部の表面粗さ〕 表面粗さ計のプローブ先端径1.5mmにより測定した値がR
a0.7μｍ以下 〔ウエハの接触部以外の面の表面粗さ〕 表面粗さ計のプローブ先端径５μｍにより測定した値が
Ra2〜10μｍ1. A CVD susceptor comprising a graphite base material having the following surface roughness of the contact portion of the wafer and the other surface. [Surface roughness of contact area of wafer] The value measured by the probe tip diameter of the surface roughness meter is 1.5 mm.
a0.7 μm or less [surface roughness of the surface other than the contact part of the wafer] The value measured by the probe tip diameter of the surface roughness meter is 5 μm.
Ra2 ~ 10 μm
ることを特徴とする請求項１記載のCVD用サセプター。2. The CVD susceptor according to claim 1, wherein the graphite base material is coated with glassy carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1284797A JPH0686662B2 (en) | 1989-11-02 | 1989-11-02 | CVD susceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1284797A JPH0686662B2 (en) | 1989-11-02 | 1989-11-02 | CVD susceptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03146672A JPH03146672A (en) | 1991-06-21 |
| JPH0686662B2 true JPH0686662B2 (en) | 1994-11-02 |
Family
ID=17683142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1284797A Expired - Lifetime JPH0686662B2 (en) | 1989-11-02 | 1989-11-02 | CVD susceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0686662B2 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3317781B2 (en) * | 1994-06-08 | 2002-08-26 | 東芝セラミックス株式会社 | Method of manufacturing susceptor for heat treatment of semiconductor wafer |
| JP3887052B2 (en) * | 1996-12-13 | 2007-02-28 | 東洋炭素株式会社 | Vapor growth susceptor |
| JP3853453B2 (en) * | 1997-01-06 | 2006-12-06 | 徳山東芝セラミックス株式会社 | Vertical susceptor for vapor phase growth |
| JP5058242B2 (en) * | 2000-03-21 | 2012-10-24 | シャープ株式会社 | Surface treatment method |
| JP2002043397A (en) * | 2000-07-26 | 2002-02-08 | Hitachi Chem Co Ltd | Susceptor |
| KR100480182B1 (en) * | 2002-01-04 | 2005-03-31 | 주성엔지니어링(주) | Oxidation prevention-treated wafer susceptor |
| JP4216541B2 (en) | 2002-06-13 | 2009-01-28 | 日鉱金属株式会社 | Vapor growth equipment |
| US20040221959A1 (en) | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Anodized substrate support |
| JP5013686B2 (en) * | 2004-10-07 | 2012-08-29 | イビデン株式会社 | Compound semiconductor susceptor |
| JP2007012933A (en) * | 2005-06-30 | 2007-01-18 | Ibiden Co Ltd | Semiconductor manufacturing device and component therefor |
| US8173228B2 (en) | 2006-01-27 | 2012-05-08 | Applied Materials, Inc. | Particle reduction on surfaces of chemical vapor deposition processing apparatus |
| JP5040333B2 (en) * | 2007-01-30 | 2012-10-03 | 信越半導体株式会社 | Vapor growth susceptor, vapor growth apparatus and vapor growth method |
| TWI410516B (en) * | 2008-09-11 | 2013-10-01 | Lu Sheng Hong | Graphite protective film and manufacturing method thereof |
| JP2012222287A (en) * | 2011-04-13 | 2012-11-12 | Shimadzu Corp | Plasma cvd deposition apparatus and substrate mounting device |
| JP5594851B2 (en) * | 2012-09-27 | 2014-09-24 | 富士フイルム株式会社 | Film forming jig and film forming method using the film forming jig |
| CN106191817B (en) * | 2016-09-23 | 2018-10-16 | 国家电投集团西安太阳能电力有限公司 | Solar silicon wafers plated film graphite boat piece and graphite boat |
| JP6991043B2 (en) * | 2017-11-22 | 2022-02-03 | 東京エレクトロン株式会社 | Board mount |
-
1989
- 1989-11-02 JP JP1284797A patent/JPH0686662B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03146672A (en) | 1991-06-21 |
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