JP2011009692A - Electrostatic chuck, method of manufacturing the same, and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrostatic chuck which can secure a required attraction force by forming a thin insulation film without causing any problem in withstand voltage performance and requires no static elimination.SOLUTION: The electrostatic chuck 6 has a substrate holding surface that holds a glass substrate G by means of an electrostatic force. The electrostatic chuck further includes: an insulation film 41 that is thermally sprayed on a base material 5; and a first electrode layer 42a to which a positive voltage is applied, and a second electrode layer 42b to which a negative voltage is applied in the insulation film 41.

Description

  The present invention is used for adsorbing and holding a substrate in a processing chamber in which a substrate such as a glass substrate for manufacturing a flat panel display (FPD) such as a liquid crystal display (LCD) is subjected to processing such as dry etching. The present invention relates to an electrostatic chucking electrode, a manufacturing method thereof, and a substrate processing apparatus using the electrostatic chucking electrode.

  In the manufacturing process of the FPD, various processes such as dry etching, sputtering, and CVD (Chemical Vapor Deposition) are performed on a rectangular glass substrate that is an object to be processed. In a processing apparatus for performing these processes, a substrate mounting table having an electrostatic adsorption electrode is provided in a chamber, and a glass substrate is adsorbed and fixed by an electrostatic adsorption electrode using, for example, Coulomb force or Johnsenler Beck force. In this state, a predetermined process is performed.

Conventionally, as an electrostatic adsorption electrode, a rectangular metal electrode having a size corresponding to a substrate is coated with an insulating film made of ceramics such as Al ₂ O ₃ by thermal spraying, and a DC voltage is applied to the metal electrode, One that adsorbs a glass substrate is known (for example, Patent Document 1).

JP 2005-136350 A

  By the way, recently, glass substrates for FPD have been getting larger, and higher adsorption power is required for electrostatic adsorption electrodes. In such an electrostatic adsorption electrode, in order to obtain a higher adsorption force, the DC voltage applied to the metal electrode needs to be increased. However, if the DC voltage applied to the metal electrode is increased, the film must be thickened in order to maintain the withstand voltage performance of the insulating film, and the thickening of the insulating film will reduce the adsorptive power. Further, when the insulating film is thickened, film cracking due to heat or stress is likely to occur. Furthermore, since the conventional electrostatic chuck electrode has a charge remaining on the surface of the glass substrate after the voltage is turned off, it needs to be neutralized and the processing time (tact time) of the substrate is extended.

  The present invention has been made in view of such circumstances, and it is possible to ensure a necessary adsorption force by forming a thin insulating film without causing a problem of withstand voltage performance. An object is to provide an electrode and a substrate processing apparatus using the electrode.

  In order to solve the above-mentioned problems, according to a first aspect of the present invention, there is provided an electrostatic adsorption electrode having a substrate holding surface for adsorbing and holding a substrate by electrostatic force in a substrate processing apparatus, which is provided on a substrate and sprayed. And a first electrode layer to which a positive voltage is applied and a second electrode layer to which a negative voltage is applied, which are provided in the insulating film. An electroadsorption electrode is provided.

  In the first aspect, it is preferable that the first electrode layer and the second electrode layer constitute a comb-shaped electrode in which their opposing surfaces form a comb shape.

  It is preferable that the first electrode layer and the second electrode layer are formed by thermal spraying. Moreover, the said adsorption | suction holding surface can be set as the structure which has an uneven | corrugated shape.

  The insulating film includes a first film including a substrate holding surface above the first electrode layer and the second electrode layer, the first electrode layer under the first film, and the A second film on which the second electrode layer is formed, and the dielectric constant of the first film is higher than the dielectric constant of the second film. In this case, the first film can be formed by diffusing a predetermined component from the substrate holding surface on the first electrode layer and the second electrode layer. Thereby, a portion corresponding to the first electrode layer and the second electrode layer is thickened, and a portion corresponding to the space between the first electrode layer and the second electrode layer is thinned. it can. In addition, the first film may be configured such that a concave portion is formed in a portion corresponding to the substrate holding surface between the first electrode layer and the second electrode layer.

  In the first aspect, the insulating film has a lower film and an upper film, and the first electrode layer and the second electrode layer are formed between the lower film and the upper film. It can be configured.

  In this case, the boundary surface between the lower layer film and the upper layer film is uneven, and the boundary surface between the lower layer film and the upper layer film between the adjacent first electrode layer and the second electrode layer. Is preferably absent. Thereby, it is possible to effectively prevent the occurrence of creeping discharge between the upper layer film and the lower layer film.

  Specifically, the first concave portion and the first convex portion are formed on the upper surface of the lower layer film, the second concave portion provided on the lower surface of the upper layer film corresponding to the first convex portion, and the A second convex portion provided corresponding to the first concave portion, wherein the first and second electrode layers are formed between the first convex portion and the second concave portion; It can be configured. In this case, the upper layer film can have a higher withstand voltage than the lower layer film. Further, the upper surface of the lower layer film has a first concave portion and a first convex portion, and the lower surface of the upper layer film is provided with a second concave portion and the first convex portion corresponding to the first convex portion. It has the 2nd convex part provided corresponding to the crevice, and it is set as the composition where the 1st and 2nd electrode layer was formed between the 1st crevice and the 2nd convex part. be able to.

  In a second aspect of the present invention, an electrostatic film having an insulating film, and a first electrode layer to which a positive voltage is applied and a second electrode layer to which a negative voltage is applied, are provided in the insulating film. A method for producing an electrostatic adsorption electrode for producing an adsorption electrode, comprising: forming a lower layer film of the insulating film on a substrate by thermal spraying; and the first electrode layer and the second layer on the lower layer film A step of forming the electrode layer by thermal spraying, and a step of forming the upper layer coating of the insulating coating by thermal spraying on the entire surface after forming the first electrode layer and the second electrode layer. A method for manufacturing an electrostatic adsorption electrode is provided.

  In the second aspect, after the first electrode layer and the second electrode layer are formed, the first electrode layer and the second electrode layer electrode layer of the lower layer film are formed by blasting. The method may further include a step of forming a concave portion in the unexposed portion, and thereafter, the upper layer film may be formed.

  In the step of forming the first electrode layer and the second electrode layer, a conductor layer is formed on the lower layer film by thermal spraying, and then the first layer of the conductor layer is formed by blasting. It is carried out by removing the part other than the electrode layer and the second electrode layer, and at that time, in the part where the first electrode layer and the second electrode layer electrode layer of the lower layer film are not formed. A recess can be formed, and then the upper layer film can be formed.

  And a step of forming a recess in the lower film, wherein the first electrode and the second electrode are formed in the recess thinner than the depth of the recess, and then the upper film is formed. can do.

  In a third aspect of the present invention, a processing container that accommodates a substrate, an electrostatic adsorption electrode of the first aspect, and a substrate held by the electrostatic adsorption electrode are provided in the processing container. There is provided a substrate processing apparatus comprising a processing mechanism for performing a predetermined process.

  In the second aspect, the processing mechanism may perform plasma processing on the substrate.

  According to the present invention, the insulating layer of the electrostatic chucking electrode is constituted by an insulating coating by thermal spraying, and the first electrode layer to which a positive voltage is applied and the second electrode layer to which a negative voltage is applied are contained in the insulating coating. Since the bipolar electrostatic adsorption electrode is formed, the withstand voltage performance is a problem in the distance between the first electrode layer and the second electrode interlayer film, and the substrate adsorption surface of the insulation film Even if the portion between the electrode layer and the electrode layer is formed thin, the problem of withstand voltage does not occur. For this reason, it is possible to obtain a high adsorption force without forming a thin insulating film by thermal spraying and causing a problem of withstand voltage performance. Further, because of the adsorption by the bipolar circuit, it is not necessary to charge the substrate, and the circuit is eliminated by turning off the voltage.

  Further, by forming the first electrode layer and the second electrode layer by thermal spraying, both the insulating layer and the electrode layer are formed by thermal spraying, and can be easily manufactured. Moreover, even if the electrode layer has a complicated shape such as a comb shape, it can be easily formed using a mask.

  Further, the insulating film has a two-layer structure of a first film between the first electrode layer and the second electrode layer and the substrate holding surface, and a second film including the space between the electrode layers. Thereby, the 1st membrane | film | coat contributes to an adsorption | suction power raise, the 2nd membrane | film | coat contributes to a raise of withstand voltage performance, and can implement | achieve an electrostatic adsorption electrode with higher adsorption power and dielectric strength.

It is sectional drawing which shows the plasma processing apparatus which is an example of the substrate processing apparatus provided with the electrostatic chuck as an electrostatic attraction electrode which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows the mounting base provided with the electrostatic chuck as an electrostatic attraction electrode which concerns on the 1st Embodiment of this invention. It is a schematic diagram which shows the electrode pattern of the electrostatic chuck as an electrostatic attraction electrode which concerns on the 1st Embodiment of this invention. It is a schematic diagram for demonstrating the adsorption | suction principle of the electrostatic adsorption electrode of this invention. It is a figure which shows the state which provided many convex parts in the board | substrate holding surface in the electrostatic chuck as an electrostatic attraction electrode which concerns on the 1st Embodiment of this invention. It is a figure which shows the state which provided many recessed parts in the board | substrate holding surface in the electrostatic chuck as an electrostatic attraction electrode which concerns on the 1st Embodiment of this invention. It is process sectional drawing which shows an example of the procedure which manufactures the electrostatic chuck as an electrostatic attraction electrode which concerns on the 1st Embodiment of this invention. It is sectional drawing for demonstrating the creeping discharge which arises in the electrostatic chuck manufactured in the procedure of FIG. (A), (b) is sectional drawing which shows the structure which can prevent a creeping discharge effectively in the electrostatic chuck as an electrostatic attraction electrode which concerns on the 1st Embodiment of this invention. It is process sectional drawing which shows an example of the procedure which manufactures the electrostatic chuck of Fig.9 (a). It is process sectional drawing which shows the other example of the procedure which manufactures the electrostatic chuck of Fig.9 (a). It is process sectional drawing which shows an example of the procedure which manufactures the electrostatic chuck of FIG.9 (b). It is sectional drawing which shows the electrostatic chuck as an electrostatic attraction electrode which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows the electrostatic chuck as an electrostatic attraction electrode which concerns on the modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the electrostatic chuck as an electrostatic attraction electrode which concerns on the other modification of the 2nd Embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional view showing a plasma processing apparatus as an example of a substrate processing apparatus provided with an electrostatic chuck as an electrostatic chucking electrode according to the first embodiment of the present invention, and FIG. FIG. 3 is a schematic diagram showing an electrode pattern of an electrostatic chuck.

  The plasma processing apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus. Here, as FPD, a liquid crystal display (LCD), an electroluminescence (Electro Luminescence; EL) display, a plasma display panel (PDP), etc. are illustrated.

  The plasma processing apparatus 1 includes a chamber 2 formed into a rectangular tube shape made of aluminum, for example, whose surface is anodized (anodized). A substrate placing table 3 for placing a glass substrate G, which is an insulating substrate, is provided at the bottom of the processing chamber 2 as a substrate to be treated.

  The substrate mounting table 3 is supported on the bottom of the processing chamber 2 via an insulating member 4, and is provided on a convex base 5 made of metal such as aluminum and a convex 5 a of the base 5. It has an electrostatic chuck 6 and a frame-shaped shield ring 7 made of insulating ceramics, for example, alumina, which is provided around the electrostatic chuck 6 and the convex portion 5 a of the substrate 5. Further, a temperature adjustment mechanism (not shown) for adjusting the temperature of the glass substrate G is provided inside the base material 5. Further, a ring-shaped insulating ring 8 made of an insulating ceramic such as alumina is provided around the base 5 so as to support the shield ring 7.

  The electrostatic chuck 6 includes a ceramic sprayed coating 41 formed by thermal spraying of an insulating ceramic such as alumina, a first metal electrode layer 42a serving as an anode formed therein, and a second metal electrode layer serving as a cathode. 42b, and the upper surface of the ceramic sprayed coating 41 is a substrate holding surface. In addition, the plasma spraying is preferable for the thermal spraying when the ceramic sprayed coating 41 is formed.

  The first metal electrode layer 42a serving as the anode and the second metal electrode layer 42b serving as the cathode are made of a metal such as tungsten or molybdenum. For example, as shown in FIG. A comb-shaped electrode is formed. A first DC power supply 34a for applying a positive voltage is connected to the first metal electrode layer 42a via a feeder line 33a, and a negative voltage is applied to the second metal electrode layer 42b via a feeder line 33b. A second DC power supply 34b to be applied is connected, and these DC power supplies are grounded to a common ground. The glass substrate G is adsorbed by applying a positive voltage + V to the first metal electrode layer 42a and applying a negative voltage −V to the second metal electrode layer 42b from these DC power supplies. Note that switches (not shown) are provided on the power supply lines 33a and 33b.

  The first metal electrode layer 42a and the second metal electrode layer 42b are preferably formed by thermal spraying using a mask. Also in this case, plasma spraying is preferable as the thermal spraying.

  Lifting pins 10 for loading and unloading the glass substrate G onto the bottom wall of the chamber 2, the insulating member 4 and the mounting table 3 are inserted so as to be able to move up and down. When the glass substrate G is transported, the elevating pins 10 are raised to the transport position above the mounting table 3, and are otherwise immersed in the mounting table 3.

  A power supply line 12 for supplying high-frequency power is connected to the base material 5 of the mounting table 3, and a matching unit 13 and a high-frequency power source 14 are connected to the power supply line 12. From the high frequency power supply 14, for example, high frequency power of 13.56 MHz is supplied to the base material 5 of the mounting table 3. Therefore, the mounting table 3 functions as a lower electrode.

  Above the mounting table 3, a shower head 20 that functions as an upper electrode is provided in parallel with the mounting table 3. The shower head 20 is supported on the upper part of the processing chamber 2, has an internal space 21 inside, and has a plurality of discharge holes 22 for discharging processing gas on the surface facing the mounting table 3. The shower head 20 is grounded and constitutes a pair of parallel plate electrodes together with the mounting table 3 functioning as a lower electrode.

A gas inlet 24 is provided on the upper surface of the shower head 20, and a processing gas supply pipe 25 is connected to the gas inlet 24, and the processing gas supply pipe 25 is connected to a processing gas supply source 28. Yes. Further, an opening / closing valve 26 and a mass flow controller 27 are interposed in the processing gas supply pipe 25. A processing gas for plasma processing, for example, plasma etching, is supplied from the processing gas supply source 28. As the processing gas, a gas usually used in this field such as a halogen-based gas, O ₂ gas, Ar gas, or the like can be used.

  An exhaust pipe 29 is formed at the bottom of the processing chamber 2, and an exhaust device 30 is connected to the exhaust pipe 29. The exhaust device 30 includes a vacuum pump such as a turbo molecular pump, and is configured so that the processing chamber 2 can be evacuated to a predetermined reduced pressure atmosphere. A substrate loading / unloading port 31 is provided on the side wall of the processing chamber 2, and the substrate loading / unloading port 31 can be opened and closed by a gate valve 32. And the glass substrate G is carried in / out by a transfer device (not shown) with the gate valve 32 opened.

  The plasma processing apparatus 1 includes a control unit 50 including a microprocessor (computer) that controls each component, and each component is connected to the control unit 50 and controlled.

Next, the processing operation in the plasma etching apparatus 1 configured as described above will be described.
First, the gate valve 32 is opened, and the glass substrate G is loaded into the chamber 2 via the substrate loading / unloading port 31 by a transfer arm (not shown) and placed on the electrostatic chuck 6 of the mounting table 3. In this case, the elevating pins 10 are projected upward to be positioned at the support position, and the glass substrate G on the transfer arm is transferred onto the elevating pins 10. Thereafter, the elevating pins 10 are lowered to place the glass substrate G on the electrostatic chuck 6 of the mounting table 3.

  Thereafter, the gate valve 32 is closed, and the inside of the chamber 2 is evacuated to a predetermined degree of vacuum by the exhaust device 30. Then, a positive voltage V + is applied from the first DC power supply 34a to the first metal electrode layer 42a serving as the anode, and a negative voltage V + is applied from the second DC power supply 34b to the second metal electrode layer 42b serving as the cathode. The glass substrate G is electrostatically adsorbed by applying −.

  Thereafter, the valve 26 is opened, the processing gas is supplied from the processing gas supply source 28 at a predetermined flow rate into the chamber 2 through the processing gas supply pipe 25 and the shower head 20, and the inside of the chamber 2 is controlled to a predetermined pressure. To do. In this state, high-frequency power for plasma generation is supplied from the high-frequency power source 14 through the matching unit 13 to the base 5 of the mounting table 3, and between the mounting table 3 as the lower electrode and the shower head 20 as the upper electrode. A high-frequency electric field is generated to generate plasma of a processing gas, and the glass substrate G is subjected to plasma etching by this plasma.

  In this embodiment, since the electrostatic chuck 6 is a bipolar electrostatic chuck, the glass substrate G is adsorbed by the bipolar circuit 51 along the electric lines of force between the bipolar electrodes as shown in FIG. That is, the bipolar circuit 51 includes a first metal electrode layer 42a, a ceramic sprayed coating 41, a glass substrate G, a ceramic sprayed coating 41, and a second metal electrode layer 42b.

As shown in FIG. 4A, a capacitor C1 having a ceramic sprayed coating 41 on the first metal electrode 42a as a dielectric layer, a capacitor C2 having a glass substrate G as a dielectric layer, and a ceramic on the second metal electrode 42b. Consider three capacitors C3 having a thermal spray coating 41 as a dielectric layer. Further, assuming that the capacitors C4 and C5 are also present between the ceramic sprayed coating 41 and the glass substrate G, as shown in FIG. 4B, the bipolar circuit 51 includes one of these five capacitors connected in series. It can be considered as a synthetic capacitor C.

The adsorption force to the glass substrate G increases or decreases in accordance with the attractive force acting between the electrodes at both ends of the synthetic capacitor C. When the voltage applied to the electrode of the synthetic capacitor C is constant, the attractive force is the capacitance of the synthetic capacitor C. The larger the value, the larger.
Assuming that the capacitors C2, C4, and C5 are constant, the capacity of the composite capacitor increases as the capacity of the capacitors C1 and C3 increases, and the adsorption power of the glass substrate G increases.

  In the present embodiment, the capacities of the capacitors C1 and C3 are increased by thinly forming the ceramic sprayed coating 41 on the first metal electrode layer 42a and the second metal electrode layer 42b. The thickness of the ceramic spray coating 41 formed by thermal spraying can be easily controlled. For this reason, while being able to obtain high adsorption power with respect to the same voltage, the ceramic sprayed coating 41 can be prevented from cracking due to heat and stress.

  In addition, the neutralization is not necessary because of the adsorption by the bipolar circuit. That is, the conventional electrostatic chuck needs to be charged when the glass substrate which is an insulator is adsorbed. When the glass substrate is adsorbed using a bipolar circuit as in the embodiment, it is not necessary to charge the glass substrate, and thus no charge removal is required. Further, in order to charge the glass substrate, a gas or plasma is required. However, in this embodiment, since the charge is not charged on the substrate, no gas or plasma is required when adsorbing the glass substrate. Thus, the glass substrate can be easily attached and detached even in a vacuum. Moreover, since the electric charge on a glass substrate is unnecessary, it can be used also in air | atmosphere.

  Furthermore, since the insulating layer is composed of the ceramic spray coating 41 having high corrosion resistance, the insulating layer can be formed thin and can be used in a plasma atmosphere.

  Furthermore, since the insulating layer is composed of the ceramic spray coating 41, the holding surface of the glass substrate G has a structure having a large number of convex portions 51 as shown in FIG. 5, and a large number of concave portions 52 as shown in FIG. Even in the case where irregularities of various designs are formed on the substrate holding surface as in the configuration having, it can be easily manufactured using a mask or the like. Of course, it can also be produced by machining.

  Furthermore, if the first metal electrode layer 42a and the second metal electrode layer 42b are formed by thermal spraying, both the insulating layer and the electrode layer are formed by thermal spraying, which can be easily manufactured. it can. Moreover, even if the first metal electrode layer 42a and the second metal electrode layer 42b have a complicated shape such as a comb shape, they can be easily formed using a mask.

  Furthermore, uniform adsorption force can be obtained by forming the first metal electrode layer 42a and the second metal electrode layer 42b in a comb shape. The shapes of the first metal electrode layer 42a and the second metal electrode layer 42b are not limited to a comb shape, and may be other shapes.

Next, an example of a procedure for manufacturing the electrostatic chuck 6 as described above will be described with reference to FIG.
First, the lower layer film 41a of the ceramic sprayed film 41 is formed on the base material 5 by thermal spraying, and if necessary, sealing treatment is performed by resin impregnation (FIG. 7A). Next, the lower layer film 41a formed by thermal spraying is polished (FIG. 7B). By this polishing treatment, the lower layer film 41a has a predetermined thickness.

  After polishing, a mask 45 is attached to the polished surface of the lower layer film 41a to perform masking for electrode formation (FIG. 7C). Next, the first metal electrode layer 42a and the second metal electrode layer 42b are formed by metal spraying using the mask 45 (FIG. 7D).

  Thereafter, the mask 45 is peeled off (FIG. 7E), and subsequently, an upper layer film 41b of the ceramic sprayed film 41 is formed on the entire surface by thermal spraying, and if necessary, sealing treatment is performed by resin impregnation (FIG. 7F). ). Finally, the upper film 41b is polished to a predetermined thickness (FIG. 7 (g)).

  The above is a general procedure, but when the bipolar electrostatic chuck 6 is manufactured by such a procedure, the lower layer in which the first metal electrode layer 42a and the second metal electrode layer 42b are polished. Since it is formed on the film 41a, if the distance between the electrodes is decreased in order to obtain a large adsorption force, creeping discharge is generated at the boundary surface between the lower film 41a and the upper film 41b when a voltage is applied, as shown in FIG. This is likely to cause a breakdown voltage failure.

  In order to prevent such creeping discharge, as shown in FIGS. 9 (a) and 9 (b), the boundary surface between the lower layer film 41a and the upper layer film 41b is formed into an uneven shape, and the adjacent first metal electrode layer is formed. It is effective not to have a boundary surface between the lower layer film 41a and the upper layer film 41b between 42a and the second metal electrode layer 42b.

  In the example of FIG. 9A, a concave portion 46a and a convex portion 47a are formed on the upper surface of the lower layer film 41a, and a convex portion 46b corresponding to the concave portion 46a and a concave portion corresponding to the convex portion 47a are formed on the lower surface of the upper layer film 41b. 47b is formed, and the first metal electrode layer 42a and the second metal electrode layer 42b are formed between the convex part 47a of the lower layer film 41a and the concave part 47b of the upper layer film 41b. Thereby, the convex part 46b of the upper layer film 41b exists between the adjacent first metal electrode layer 42a and the second metal electrode layer 42b, and the boundary surface between the lower layer film 41a and the upper layer film 41b exists. Therefore, it is possible to make a state where creeping discharge hardly occurs.

  In the example of FIG. 9B, a recess 48a and a protrusion 49a are formed in the lower layer film 41a, and a protrusion 48b corresponding to the recess 48a and a recess 49b corresponding to the protrusion 49a are formed in the upper layer film 41b. The first metal electrode layer 42a and the second metal electrode layer 42b are formed between the concave portion 48a of the lower layer film 41a and the convex portion 48b of the upper layer film 41b. Thereby, the convex part 49a of the lower layer film 41a exists between the adjacent first metal electrode layer 42a and the second metal electrode layer 42b, and the boundary surface between the lower layer film 41a and the upper layer film 41b exists. Therefore, it is possible to make a state where creeping discharge hardly occurs.

  Further, in the example of FIG. 9A, the upper layer film 41b is mainly responsible for insulation, so that the upper layer film 41b can be a film having a higher withstand voltage performance than the lower layer film 41a. For example, a different impregnating agent such as an impregnating agent A that has a high adhesive force and can flexibly cope with a difference in thermal expansion is used for the lower layer film 41a, and an impregnating agent B that has a high withstand voltage performance is used for the upper layer film 41b. The ceramic spray coating configuration used can be considered.

Next, a procedure for forming the structure of FIGS. 9A and 9B will be described.
When the structure of FIG. 9A is formed, the procedure shown in FIG. 10 can be performed. First, the lower layer coating 41a of the ceramic spray coating 41 is formed on the base material 5 by thermal spraying, and if necessary, sealing treatment is performed by resin impregnation (FIG. 10 (a)). Next, the lower layer film 41a formed by thermal spraying is polished (FIG. 10B). After polishing, a mask 45 is attached to the polished surface of the lower layer film 41a to perform masking for electrode formation (FIG. 10C). Up to this point, the process is the same as that shown in FIGS.

  Next, the first metal electrode layer 42a and the second metal electrode layer 42b are formed by metal spraying using the mask 45 (FIG. 10D). At this time, it is formed thicker than FIG.

  Thereafter, the mask 45 is removed (FIG. 108 (e)), and then the entire surface is blasted to reduce the thickness of the lower layer film 41a and the first and second metal electrode layers 42a, 42b (FIG. 10 (f)). . Thereby, the blasted portion of the lower layer film 41a becomes the concave portion 46a, and the lower portions of the metal electrode layers 42a and 42b become the convex portion 47a.

  Thereafter, an upper coating 41b of the ceramic spray coating 41 is formed on the entire surface by thermal spraying, and sealing treatment is performed by resin impregnation as required (FIG. 10 (g)). At this time, a convex portion 46b is formed on the upper layer coating 41b corresponding to the concave portion 46a of the lower layer coating 41a, and a concave portion 47b is formed corresponding to the convex portion 47a. Finally, the upper film 41b is polished to a predetermined thickness (FIG. 10 (h)).

  Further, the structure of FIG. 9A can also be formed by the procedure shown in FIG. First, the lower layer film 41a of the ceramic spray coating 41 is formed on the base material 5 by thermal spraying, and if necessary, sealing treatment is performed by resin impregnation (FIG. 11 (a)). Next, the lower layer film 41a formed by thermal spraying is polished (FIG. 11B). Next, a metal layer (conductor layer) 42 for forming metal electrode layers 42a and 42b is formed on the entire surface of the lower layer film 41a after polishing by metal spraying (FIG. 11C). After the metal layer 42 is polished, a mask 45 is attached to the polished surface, and masking for electrode formation is performed (FIG. 11D).

  Next, blasting is performed using the mask 45 to remove the portion of the metal layer 42 where the mask 45 is not present and reduce the thickness of the portion of the underlying lower layer film 41a (FIG. 11E). Thereby, the first metal electrode layer 42a and the second metal electrode layer 42b are formed, and the blasted portion of the lower layer film 41a becomes the recess 46a. And the lower part of metal electrode layer 42a, 42b becomes the convex part 47a.

  Thereafter, the mask 45 is peeled off (FIG. 11 (f)), and subsequently, an upper coating 41b of the ceramic sprayed coating 41 is formed on the entire surface by thermal spraying, and if necessary, sealing treatment is performed by resin impregnation (FIG. 11 (g)). ). At this time, a convex portion 46b is formed on the upper layer coating 41b corresponding to the concave portion 46a of the lower layer coating 41a, and a concave portion 47b is formed corresponding to the convex portion 47a. Finally, the upper film 41b is polished to a predetermined thickness (FIG. 11 (h)).

  When the structure of FIG. 9B is formed, the procedure shown in FIG. 12 can be performed. First, the lower layer coating 41a of the ceramic spray coating 41 is formed on the base material 5 by thermal spraying, and if necessary, sealing treatment is performed by resin impregnation (FIG. 12 (a)). Next, the lower layer film 41a formed by thermal spraying is polished (FIG. 12B). After polishing, a mask 45 is attached to the polished surface of the lower layer film 41a, and blasting and masking for electrode formation are performed (FIG. 12C).

  Next, a blast process is performed using the mask 45, and the recessed part 48a is formed in the lower layer film | membrane 41a (FIG.12 (d)). At this time, a portion of the lower layer film 41a below the mask 45 becomes a convex portion 49a that is not blasted.

  Next, the first metal electrode layer 42a and the second metal electrode layer 42b are formed in the recess 48a by metal spraying using the mask 45 (FIG. 12E). At this time, the thickness of the first metal electrode layer 42a and the second metal electrode layer 42b is made thinner than the depth of the recess 48a.

  Thereafter, the mask 45 is peeled off (FIG. 12 (f)), and subsequently, the upper coating 41b of the ceramic sprayed coating 41 is formed on the entire surface by thermal spraying, and if necessary, sealing treatment is performed by resin impregnation (FIG. 12 (g)). ). At this time, a convex portion 48b is formed on the upper layer coating 41b corresponding to the concave portion 48a of the lower layer coating 41a, and a concave portion 49b is formed corresponding to the convex portion 49a. Finally, the upper film 41b is polished to a predetermined thickness (FIG. 12 (h)).

Next, a second embodiment of the present invention will be described.
As described above, the adsorption power of the glass substrate G can be increased by thinning the ceramic sprayed coating 41 on the first metal electrode layer 42a and the second metal electrode layer 42b.

On the other hand, even if the dielectric constant of the ceramic spray coating 41 is increased, the capacitor C1 having the ceramic spray coating 41 on the first metal electrode 42a as a dielectric layer and the ceramic spray coating 41 on the second metal electrode 42b are dielectric. The capacity of the capacitor C3 as a layer can be increased.

  Therefore, in the present embodiment, the first metal electrode layer 42a, the second metal electrode layer 42b, the first film between the substrate holding surface, and the second insulating film including between these electrode layers A ceramic sprayed coating having a two-layer structure was provided, and the dielectric constant of the first coating was made higher than that of the insulating layer of the second coating.

Hereinafter, a specific configuration will be described.
FIG. 13 is a cross-sectional view showing an electrostatic chuck according to the second embodiment of the present invention. The electrostatic chuck 60 of this embodiment has a ceramic sprayed coating 141 formed by thermal spraying of insulating ceramics. The ceramic sprayed coating 141 is provided under the first coating 142 formed between the substrate holding surface and the metal electrode layers 42a and 42b, and the first metal electrode layer 42a and the second metal electrode. The layer 42b has the 2nd membrane | film | coat 143 formed in the inside. The dielectric constant ε1 of the first film 142 is higher than the dielectric constant ε2 of the second film 143.

  Thereby, the 1st membrane | film | coat 142 contributes to a suction | attraction force raise, and can implement | achieve the bipolar electrostatic chuck with a higher suction | attraction force.

Next, a modification of the present embodiment will be described with reference to FIGS.
FIG. 14 is a cross-sectional view showing a first modification. In this example, the electrostatic chuck 60a is formed by spraying a ceramic sprayed coating having a dielectric constant of ε2 and a structure composed of the first metal electrode layer 42a and the second metal electrode layer 42b therein. A predetermined component is diffused from the substrate holding surface on the electrode layer, and the dielectric constant of the ceramic sprayed coating immediately above each electrode layer is changed to ε1 which is larger than ε2. In FIG. 14, a portion where the dielectric constant has changed to ε1 is illustrated as a wavy first film 142a. Here, examples of the predetermined component to be diffused include a resin.

  Thereby, the 1st membrane | film | coat 142a contributes to an adsorption | suction power raise, and the 1st membrane | film | coat 142a with a high dielectric constant becomes thick in the position of the electrode layer which contributes to adsorption | suction, and can raise an adsorption | suction power more.

  FIG. 15 is a cross-sectional view showing a second modification. In this example, the electrostatic chuck 60b includes a first film 142b having a dielectric constant ε1 formed between the substrate holding surface and the metal electrode layers 42a and 42b and a first metal electrode 142b provided below the first film 142b. The layer 42a and the second metal electrode layer 42b have a ceramic sprayed coating 141b formed by a second coating 143b having a dielectric constant ε2 formed therein, and the first coating 142b is a portion corresponding to the electrode layer. A recess 144 is formed in the upper surface. The recess 144 is a vacuum layer having a dielectric constant of ε0 (actually a slight gas exists), but since ε0 is almost 1, ε1> ε2> ε0.

  Thereby, the 1st membrane | film | coat 142b contributes to an adsorption | suction power raise, and can increase an adsorption | suction power more similarly to the example of FIG.

  As mentioned above, although embodiment of this invention was described, this invention can be variously deformed, without being limited to the said embodiment. For example, in the above-described embodiment, the RIE type capacitively coupled parallel plate plasma etching apparatus that applies high frequency power to the lower electrode has been described as an example. However, the present invention is not limited to the etching apparatus, and other ashing, CVD film forming, and the like are performed. It can be applied to various types of plasma processing apparatuses. Further, the present invention can be applied not only to the plasma processing apparatus but also to other substrate processing apparatuses. Furthermore, although the case where the present invention is applied to the plasma processing of the glass substrate for FPD has been described in the above embodiment, the present invention is not limited to this and can be applied to other various substrates.

DESCRIPTION OF SYMBOLS 1; Plas processing apparatus 2; Processing chamber 3; Mounting stand 5; Base material 6,60,60a, 60b; Electrostatic chuck 7; Shield ring 14; High frequency power supply 20; Shower head 28; Processing gas supply source 34a; DC power source 34b; second DC power source 41, 141, 141a, 141b; ceramic sprayed coating 42a; first metal electrode layer 42b; second metal electrode layer 46a, 47b, 48a, 49b; recess 46b, 47a, 48b, 49a; convex portion 51; convex portion 52; concave portion 142, 142a, 142b; first coating 143, 143a, 143b; second coating G; glass substrate

Claims (18)

An electrostatic chucking electrode having a substrate holding surface for chucking and holding a substrate by electrostatic force,
An insulating film provided on the substrate and formed by thermal spraying;
An electrostatic adsorption electrode, comprising: a first electrode layer to which a positive voltage is applied and a second electrode layer to which a negative voltage is applied, which are provided in the insulating film.   The electrostatic adsorption electrode according to claim 1, wherein the first electrode layer and the second electrode layer constitute a comb-shaped electrode in which their opposing surfaces form a comb shape.   The electrostatic adsorption electrode according to claim 1 or 2, wherein the first electrode layer and the second electrode layer are formed by thermal spraying.   The electrostatic chucking electrode according to any one of claims 1 to 3, wherein the suction holding surface has an uneven shape.   The insulating film includes a first film including a substrate holding surface above the first electrode layer and the second electrode layer, and the first electrode layer and the second film under the first film. 5. A second film on which the electrode layer is formed, wherein a dielectric constant of the first film is higher than a dielectric constant of the second film. The electrostatic adsorption electrode according to claim 1.   The electrostatic film according to claim 5, wherein the first film is formed by diffusing a predetermined component from a substrate holding surface on the first electrode layer and the second electrode layer. Adsorption electrode.   6. The static electricity according to claim 5, wherein the first film has a recess formed in a portion corresponding to the space between the first electrode layer and the second electrode layer on the substrate holding surface. Electroadsorption electrode.   The insulating film has a lower layer film and an upper layer film, and the first electrode layer and the second electrode layer are formed between the lower layer film and the upper layer film. The electrostatic attraction electrode according to any one of claims 1 to 4.   The boundary surface between the lower layer film and the upper layer film is uneven, and there is no boundary surface between the lower layer film and the upper layer film between the adjacent first electrode layer and the second electrode layer. The electrostatic chucking electrode according to claim 8.   A first concave portion and a first convex portion are provided on the upper surface of the lower layer coating, and a second concave portion and a first concave portion are provided on the lower surface of the upper layer coating corresponding to the first convex portion. The first and second electrode layers are formed between the first convex portion and the second concave portion, and the second convex portion is provided correspondingly. The electrostatic chucking electrode according to claim 9.   The electrostatic adsorption electrode according to claim 10, wherein the upper film has a higher withstand voltage than the lower film.   A first concave portion and a first convex portion are provided on the upper surface of the lower layer coating, and a second concave portion and a first concave portion are provided on the lower surface of the upper layer coating corresponding to the first convex portion. A second protrusion provided correspondingly, wherein the first and second electrode layers are formed between the first recess and the second protrusion. The electrostatic chucking electrode according to claim 9. Electrostatic attracting electrode for producing an electrostatic attracting electrode having an insulating film and a first electrode layer to which a positive voltage is applied and a second electrode layer to which a negative voltage is applied, provided in the insulating film A manufacturing method of
Forming a lower layer coating of the insulating coating on a substrate by thermal spraying;
Forming the first electrode layer and the second electrode layer on the lower film by thermal spraying;
And a step of spraying the upper coating of the insulating coating on the entire surface after forming the first electrode layer and the second electrode layer.   After forming the first electrode layer and the second electrode layer, a dent is formed in a portion of the lower layer film where the first electrode layer and the second electrode layer are not formed by blasting. The method for manufacturing an electrostatic attraction electrode according to claim 13, further comprising: a step of forming the upper layer film.   In the step of forming the first electrode layer and the second electrode layer, a conductor layer is formed on the lower layer film by thermal spraying, and then the first electrode layer of the conductor layer is formed by blasting. And a portion other than the second electrode layer is removed, and in this case, a recess is formed in a portion of the lower layer film where the first electrode layer and the second electrode layer electrode layer are not formed. The method for producing an electrostatic attraction electrode according to claim 13, wherein the upper layer film is formed after the formation.   The method further comprises the step of forming a recess in the lower layer film, wherein the first electrode and the second electrode are formed in the recess less than the depth of the recess, and then the upper layer film is formed. The manufacturing method of the electrostatic attraction electrode according to claim 13. A processing container for containing a substrate;
An electrostatic adsorption electrode provided in the processing container and according to any one of claims 1 to 12,
A substrate processing apparatus comprising: a processing mechanism that performs a predetermined process on the substrate held by the electrostatic chucking electrode. The substrate processing apparatus according to claim 17, wherein the processing mechanism performs plasma processing on the substrate.

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