KR101461060B1 - Apparatus and method for treating substrate - Google Patents

Abstract

Disclosed is an apparatus for treating a substrate. The apparatus for treating a substrate includes a load port which processes a substrate in which a wafer with a completed backgrounding process of a mounting tape fixed to a frame ring is attached, and a carrier for receiving substrates is placed on; a plasma processing unit which processes the upper surface of the wafer by supplying plasma; and a substrate transfer unit which transfers the substrate between the carrier and the plasma processing unit.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

The present invention relates to an apparatus and a method for processing a substrate, and more particularly, to an apparatus and a method for processing a substrate using plasma.

The wafer that has undergone the FEOL (Front End Of Line) process is thicker than necessary and thinned through the back grinding process. However, the thickness is too thin to handle the wafer easily. Therefore, the carrier is attached to the wafer using an adhesive for wafer handling. The carrier is removed after the subsequent processes of chip bonding, underfilling, and molding.

After removal of the carrier, the wafer is handled while attached to the mounting tape secured to the frame ring. The mounting tape not only facilitates handling of the wafer, but also prevents chips from being scattered when the wafer is separated into individual chips.

On the wafer from which the carrier is removed, the adhesive is not completely removed, but a part remains. In order to remove this, an additional plasma processing is performed. During plasma processing, the mounting tape as well as the wafer is exposed to the plasma. The mounting tape is deformed due to the plasma, the handling of the wafer is not easy, and the tape is not easily removed, leaving a part of the wafer remaining.

Embodiments of the present invention provide a substrate processing apparatus capable of easily removing an adhesive adhered to a wafer.

Embodiments of the present invention also provide a substrate processing apparatus capable of preventing denaturation of a mounting tape.

Embodiments of the present invention also provide a substrate processing apparatus capable of easily handling a wafer attached to a mounting tape.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

A substrate processing apparatus according to an embodiment of the present invention processes a substrate on which a back-ground wafer is attached to a mounting tape fixed to a frame ring. The substrate processing apparatus includes a load port in which a carrier accommodating a plurality of the substrates is placed; A plasma processing unit for supplying a plasma to process an upper surface of the wafer; And a substrate transferring unit for transferring the substrate between the carrier and the plasma processing unit.

The plasma processing unit may further include: a processing chamber having a space formed therein; A susceptor positioned within the process chamber and supporting the substrate; A plasma supply unit for supplying plasma into the process chamber; And a blocking member covering the mounting tape so as not to be exposed to the plasma.

Further, the blocking member covers between the wafer and the frame ring, a blocking ring not in contact with the mounting tape; And a lifting member for lifting the blocking ring.

Further, the blocking ring has a ring shape and has a body facing the mounting tape; An inner side portion extending downwardly inclined from the inside of the body and having an end in contact with an edge region of the wafer; And an outer side portion extending downwardly inclined from the outside of the body, the end of which is in contact with the frame ring.

Further, the blocking ring has a ring shape and has a body facing the mounting tape; An inner side portion extending downwardly inclined from the inside of the body and having an end portion spaced apart from a top surface of the wafer by a predetermined distance; And an outer side portion extending downwardly inclined from the outside of the body, the end of which is in contact with the frame ring.

In addition, the frame ring may have a width that can cover an outer edge region of the frame ring from an edge region of the wafer.

Further, the blocking ring may be made of a ceramic material.

Further, the elevating member includes a first rod for supporting the blocking ring; A second rod supporting the first rod at a lower portion of the first rod and having a space in which the first rod can be elevated inside; A third rod supporting the second rod at a lower portion of the second rod and having a space in which the second rod can be elevated inside; And a driving unit for individually elevating the first rod and the second rod, wherein the second rod is provided with a support piece for seating the substrate on the susceptor in a state of supporting the mounting ring, An accommodation space in which the support piece can move in the up and down direction may be formed in the edge region of the support member.

In addition, the accommodation space may be provided from the outer surface of the susceptor to the point where the edge of the wafer is located inwardly.

The transfer unit may include a transfer robot for transferring the substrate, the transfer unit having a hand portion holding a partial area of the frame ring in a clamping manner.

Further, the hand portion may include a lower hand on which a part of the frame ring is placed; An upper hand positioned above the lower hand for pressing and fixing the frame ring placed on the lower hand; And a driving unit for moving the upper hand such that the upper hand is unfolded or folded with respect to the lower hand.

In addition, the front end of the lower hand may have an arc shape having the same curvature as the frame ring.

 A substrate processing apparatus according to another embodiment of the present invention processes a substrate on which a back-ground wafer is attached to a mounting tape fixed to a frame ring. The substrate processing apparatus includes a processing chamber having a space formed therein; A susceptor positioned within said process chamber and in which said substrate rests; A plasma supply unit for supplying a plasma gas into the process chamber; A blocking ring covering the mounting tape exposed to the outside of the substrate area laid on the susceptor; And a lifting member for lifting the blocking ring.

The blocking ring also covers the area between the wafer and the frame ring in the area of the substrate, and may be in non-contact with the mounting tape.

Further, the blocking ring may have a width capable of covering an outer edge region of the frame ring from an edge region of the wafer.

The blocking ring may have an inner end contacting the upper surface of the wafer and an outer end contacting the upper surface of the frame ring.

The blocking ring may have an inner end at a predetermined distance from an upper surface of the wafer, and an outer end of the blocking ring may contact an upper surface of the frame ring.

Further, the elevating member includes a moving rod to which the blocking ring is coupled at an upper end; And a driving unit for moving the movable rod up and down. The movable rod supports the mounting ring, and a supporting piece for lowering together with the moving rod to seat the substrate on the susceptor is engaged. A receiving space in which the support piece can move up and down can be formed.

A substrate processing method according to an embodiment of the present invention processes a substrate on which a back-ground wafer is attached to a mounting tape fixed to a frame ring. According to the substrate processing method, the transfer robot transfers the substrate into the process chamber, places the substrate on a susceptor provided in the process chamber, and supplies the plasma into the process chamber to process the upper surface of the wafer .

Further, a substrate placed on the susceptor may be covered by a blocking ring so that the mounting tape is not exposed to the plasma.

Further, the blocking ring has a ring shape and can cover an area between the wafer and the frame ring.

In addition, the blocking ring can cover the outer edge region of the frame ring from the edge region of the wafer.

Further, the inner end of the blocking ring can contact the wafer.

Further, the inner end of the blocking ring may be spaced apart from the wafer by a predetermined distance.

In addition, in the step of seating the substrate on the susceptor, the support piece may descend with the lowering of the moving rod in a state where the frame ring is placed on the support piece coupled with the moving rod for moving the blocking ring.

In addition, the carrying robot can transfer the substrate in a state in which the hand part grasps a part of the frame ring in a clamping manner.

A substrate processing apparatus according to another embodiment of the present invention processes a substrate having a wafer back-grounded on a mounting tape fixed to a frame ring, and has a hand portion gripping a part of the frame ring in a clamping manner, And a transport robot for transporting the substrate.

A substrate processing method according to another embodiment of the present invention is a method of processing a substrate on which a back-grounded wafer is mounted on a mounting tape fixed to a frame ring, and a hand part of the carrier robot picks up the substrate from the carrier on which the substrates are loaded. Wherein the hand part grips a part of the frame ring in a clamping manner to pick up the substrate.

According to embodiments of the present invention, the adhesive remaining on the wafer after carrier removal is completely removed.

Further, according to the embodiments of the present invention, since the mounting tape is prevented from being exposed to the plasma, denaturation of the mounting tape is prevented.

In addition, according to the embodiments of the present invention, since the substrate is transported in a state in which the carrier robot grasps the frame ring by the clamping method, handling of the wafer is easy.

1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a perspective view showing a substrate provided in a substrate processing apparatus according to an embodiment of the present invention.
FIG. 3 is a view sequentially showing a process of manufacturing the substrate of FIG. 2. FIG.
5 is a view showing a first transport robot according to an embodiment of the present invention.
FIG. 6 is a view showing the hand portion of FIG. 5;
FIG. 7 is a diagram illustrating a process of gripping a substrate by the hand unit.
8 is a diagram illustrating a plasma processing unit according to an embodiment of the present invention.
9 is a plan view showing a susceptor and a blocking member according to an embodiment of the present invention.
10 is a view showing a susceptor and a blocking member according to an embodiment of the present invention.
11 is a view showing a blocking member according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to Fig. 1, the substrate processing apparatus 1 includes a load port 10, a substrate transfer unit 20, and a plasma processing unit 30. The load port 10, the substrate transfer unit 20, and the plasma processing unit 30 are sequentially arranged in one direction. The direction in which the load port 10, the substrate transfer unit 20 and the plasma processing unit 30 are disposed is referred to as a first direction 2 and a direction perpendicular to the first direction 2 Direction is defined as a second direction (3).

The load port 10 is located in front of the substrate transfer unit 20 and a plurality of the load ports 10 are arranged in a line along the second direction 3, A carrier (for example, cassette, FOUP, etc.) 100 is seated on the load port 10, respectively. In the carrier 100, a substrate 50 to be supplied to the process and a substrate 50 to which the process is completed are accommodated. According to the embodiment, the substrate 50 is provided with a structure in which a wafer back-ground is attached to a mounting tape fixed to the frame ring.

FIG. 2 is a perspective view showing a substrate provided in a substrate processing apparatus according to an embodiment of the present invention, and FIG. 3 is a view sequentially showing a process of manufacturing the substrate of FIG.

Referring to FIGS. 2 and 3, a wafer 51 on which a front end of line (FEOL) process is completed is provided as shown in FIG. 3A. TSV (Through Silicon Via) 52 and bumps 53 are sequentially formed on the wafer 51 as shown in FIG. 3 (b), and the carrier 54 is bonded. The carrier 54 is provided for handling of the wafer 51 because it is a silicon or glass plate and is very thin and difficult to handle when the wafer 51 undergoes a backgrinding process. The carrier 54 is adhered to the upper surface of the wafer 51 by the adhesive 55.

The wafer 51 to which the carrier 54 is attached is provided in a back grinding process to reduce the size of the package. Since the wafer 51 subjected to the FEOL process is unnecessarily thick, the back side of the wafer 51 is polished very thinly in the backgrinding process as shown in FIG. 3C.

After the back grinding process, the wafer 51a is flipped as shown in FIG. 3 (d), and chip bonding (61) is performed. Then, underfill 62 and molding 63 proceed sequentially as shown in FIG. 3 (e).

The wafer 51b having completed the molding process is attached onto the mounting tape 72 fixed to the frame ring 71 as shown in Fig. 3 (f). The frame ring 71 is provided in a ring shape having a larger radius than the wafer 51b and made of stainless steel or stainless steel. The mounting tape 72 is a thin film and is fixed to the frame ring 71 because it is difficult for the film itself to support the wafer 51b. The mounting tape 72 is composed of three layers: a base film, an adhesive layer to which the wafer is bonded, and a protective film for protecting the base film. Since the frame ring 71 has a larger radius than the wafer 51b, the mounting tape 72 is exposed to the outside in an area between the frame ring 71 and the wafer 52b when viewed from above.

After attaching the wafer 52b to the mounting tape 72, the carrier 54 is removed as shown in FIG. 3 (g). When the carrier 54 is removed, the mounting tape 72 temporarily replaces the carrier 54 and is supplied to the process with the wafer 51c attached to the mounting tape 72. The frame ring 71 and the mounting tape 72 facilitate the handling of the wafer 51c. And the mounting tape 72 prevents the chips from being scattered or lost by the adhesive force when the wafer 51c is diced and separated into individual chips.

The adhesive 55a remains on the upper surface of the wafer 51c from which the carrier 54 is removed, and an additional process for removing the adhesive 55a is required. The plasma processing unit 30 described later performs a process of removing the adhesive 55a remaining on the wafer 51c by using plasma.

4 is a view showing a state in which substrates are housed in a carrier according to an embodiment of the present invention.

Referring to FIG. 4, slots 101 are coupled to both inner sidewalls of the carrier 100. The slots 101 are arranged in a vertical direction maintaining a predetermined gap. The substrates 50 are housed with both sides of the frame ring 71 seated in the slots 101. The mounting tape 72 is deflected due to its own weight of the wafer 51c.

Referring back to FIG. 1, the substrate transfer unit 20 transfers the substrate 50 between the carrier 100 and the substrate processing unit 30. The substrate transfer unit 20 includes a frame 210, a first transfer robot 220, a load lock chamber 230, a transfer chamber 240, and a second transfer robot 250.

The frame 210 is disposed between the load port 10 and the load lock chamber 230. The first transport robot 220 is disposed inside the frame 210. The first transfer robot 220 transfers the substrate 50 between the carrier 100 and the load lock chamber 230.

FIG. 5 is a view showing a first carrying robot according to an embodiment of the present invention, and FIG. 6 is a view showing a hand part of FIG.

5 and 6, the first conveying robot 220 has a structure in which a plurality of arms 221 and 222 are rotatable relative to each other, and a hand portion 223 is provided at an upper end thereof. The hand portion 223 has a structure capable of gripping the frame ring 71 in a clamping manner. The hand portion 223 has a lower hand 224, an upper head 225, and a driving portion 226.

In the lower hand 224, a partial area of the frame ring 71 is placed. The front end of the lower hand 224 has an arc-shaped support frame 224a having the same curvature as the frame ring 71. [ The frame ring 71 is stably supported by a part of the support frame 224a.

The upper hand 225 is located on the upper side of the lower hand 224 and engages the frame ring 71 placed on the lower hand 224 to fix the substrate 50. The front end of the upper hand 225 may have a horseshoe shape. The upper hand 225 pivotally engages the lower hand 224 and grasps the frame ring 71 while being unfolded or folded against the lower hand 224.

The driving unit 226 moves the upper hand 225 relative to the lower hand 224 so that the upper hand 225 and the lower hand 224 can grip or release the frame ring 71. [ When the upper hand 225 is axially coupled to the lower hand 224, the driving unit 226 can rotate the upper hand 225 about the axis. Alternatively, when the rear end of the upper hand 225 is engaged with a vertically movable rod (not shown), the driving unit 226 can move the upper hand 225 by lifting the rod.

FIG. 7 is a diagram illustrating a process of gripping a substrate by the hand unit.

Referring to FIG. 7, the lower hand 224 of the hand portion 223 enters under the frame ring 71. The front end 224a of the lower hand 224 has the same curvature as the frame ring 71 and therefore is located at a lower portion along a part of the region of the frame ring 71. [ The upper hand 223 is lowered by the driving of the driving unit 226, and the front end presses the upper surface of the frame ring 71. The frame ring 71 is supported by the lower hand 224 and is pushed by the upper hand 225. The hand portion 223 picks up the substrate 50 while holding the frame ring 71 and retreats to the outside of the carrier 100. [

According to the embodiment, the lower hand 224 is restricted from entering the lower side of the wafer 51c. The wafer 51c can be positioned lower than the frame ring 71 because the mounting taper 72 is sagged down by the weight of the wafer 51c. The front end 224a of the lower hand 224 may collide with the wafer 51c in the course of entering the wafer 51a. The present invention prevents the collision of the hand portion 223 and the wafer 51c because the front end 224a of the lower hand 224 reaches below the frame ring 71 and grasps the substrate 50. [

Referring again to FIG. 1, a load lock chamber 230 is disposed between the transfer chamber 240 and the frame 210. Inside the load lock chamber 230, the substrates 50 are stacked. The load lock chamber 230 provides a space for waiting before the substrate 50 to be supplied to the process is transferred to the plasma processing unit 30 or before the processed substrate 50 is transferred to the carrier 100 do. One or a plurality of load lock chambers 230 may be provided. According to the embodiment, two load lock chambers 230 are provided. One load lock chamber 230 houses a substrate 50 which is provided to the plasma processing unit 30 for processing and another load lock chamber 230 stores the substrate 50 which has been processed in the plasma processing unit 30 The substrate 50 can be housed.

The transfer chamber 240 is disposed behind the load lock chamber 230 along the first direction 2 and has a polygonal body when viewed from the top. On the outside of the body 240, load lock chambers 230 and a plurality of plasma processing units 30 are arranged along the circumference of the body 240. According to the embodiment, the transfer chamber 240 has a pentagonal body when viewed from the top. A load lock chamber 230 is disposed on each of the two sidewalls adjacent to the frame 210, and plasma processing units 30 are disposed on the remaining sidewalls. On the respective side walls of the body 240, passages (not shown) through which the substrate 50 enters and exits are formed. The passageway provides a space for transfer of the substrate 50 between the transfer chamber 240 and the load lock chamber 230 or between the transfer chamber 240 and the process chamber 30. [ Each passage is provided with a door (not shown) for opening and closing the passage. The transfer chamber 240 may be provided in various shapes depending on the required process module.

The second transfer robot 250 is disposed inside the transfer chamber 240. The second conveying robot 250 transfers the unprocessed substrate 50 waiting in the load lock chamber 230 to the plasma processing unit 30 or loads the substrate 50 which has been processed in the plasma processing unit 30 To the lock chamber (230). The second transfer robot 250 can sequentially provide the substrate 50 to the plasma processing units 30. [ The second conveying robot 250 grasps the substrate 50 in the same manner as the first conveying robot 220. The second conveying robot 250 transfers the substrate 50 in a state in which the hand 251 grasps the frame ring 71 in a clamping manner. The hand portion 251 of the second conveying robot 250 may have the same structure as the hand portion 223 of the first conveying robot 220 (FIG. 5).

The plasma processing unit 30 supplies the plasma to remove the adhesive 55a remaining on the wafer 51c.

8 is a diagram illustrating a plasma processing unit according to an embodiment of the present invention. 8, the plasma processing unit 50 includes a process chamber 310, a susceptor 320, a showerhead 330, a plasma supply 340, and a blocking member 350.

The process chamber 310 provides a space in which process processing is performed. The process chamber 310 has a body 311 and a seal cover 312. The upper surface of the body 311 is opened and a space is formed therein. An opening (not shown) through which the substrate 50 enters and exits is formed on the side wall of the body 311, and the opening is opened and closed by an opening / closing member such as a slit door (not shown). The opening and closing member closes the opening while the processing of the substrate 50 is performed in the processing chamber 310 and when the substrate 50 is carried into the processing chamber 310 and out of the processing chamber 310 Open the opening. The hand portion 251 of the second conveying robot 250 moves into and out of the process chamber 310 with the opening thereof opened.

 An exhaust hole 313 is formed in the lower wall of the body 311. The exhaust hole 313 is connected to the exhaust line 317. The internal pressure of the process chamber 310 is controlled through the exhaust line 317 and the reaction byproducts generated in the process are discharged to the outside of the process chamber 310.

The sealing cover 312 engages with the upper wall of the body 311 and covers the open upper surface of the body 311 to seal the inside of the body 311. The upper end of the sealing cover 312 is connected to the plasma supply part 340. A diffusion space 314 is formed in the sealing cover 312. The diffusion space 314 is gradually widened toward the shower head 330 and has an inverted funnel shape.

The susceptor 320 is located inside the process chamber 310, and the substrate 50 is placed on the top surface. The susceptor 320 may be provided with an electrostatic chuck for attracting a substrate by an electrostatic force. An accommodating space 321 is formed in an edge region of the susceptor 320. The accommodation space 321 is recessed inward from the outer surface of the susceptor 320. The accommodation space 321 may be formed inside the susceptor 320 to the point where the edge of the wafer 52c lies. A plurality of accommodating spaces 321 may be formed along the periphery of the susceptor 320. According to the embodiment, two accommodating spaces 321 are formed on one side of the susceptor 320, and two accommodating spaces 321 may be formed on the other side of the susceptor 320 symmetrical thereto. The accommodation space 321 provides a space in which the support piece 365, which will be described later, can move up and down.

A cooling passage (not shown) through which the cooling fluid circulates may be formed in the susceptor 320. The cooling fluid circulates along the cooling flow path and cools the susceptor 320 and the substrate 50. With the circulation of the cooling fluid, the temperature of the wafer 52c is prevented from rising during the plasma process.

The shower head 330 is coupled to the upper wall of the body 311 by a fastening member. The showerhead 330 is in the form of a disk and is disposed in parallel with the upper surface of the susceptor 320. The shower head 330 is made of aluminum and oxidizes and provides the surface. Discharge holes 331 are formed in the shower head 330. The distribution holes 331 are formed at regular intervals on the circumference of the concentric circle for uniform radical supply. The plasma diffused in the diffusion space 314 flows into the distribution holes 331. At this time, charged particles such as electrons or ions are confined in the showerhead 330, and neutral particles, such as oxygen radicals, which are not charged, are supplied to the substrate 50 through the distribution holes 331.

A plasma supply 340 is provided on top of the process chamber 310 to generate and supply a plasma. The plasma supply 340 includes an oscillator 341, a waveguide 342, a dielectric tube 343, and a process gas supply 344.

The oscillator 341 generates an electromagnetic wave. The waveguide 342 connects the oscillator 341 and the dielectric tube 343 and provides a path through which the electromagnetic wave generated by the oscillator 341 is transferred into the dielectric tube 343. The process gas supply unit 344 supplies the process gas into the dielectric pipe 343. The process gas includes oxygen and nitrogen, and a fluorine-based gas may be added to improve the adhesive removal efficiency. The process gas supplied into the dielectric tube 343 is excited into a plasma state by electromagnetic waves. The plasma flows into the diffusion space 314 through the dielectric tube 343.

FIG. 9 is a plan view showing a susceptor and a blocking member according to an embodiment of the present invention, and FIG. 10 is a view showing a susceptor and a blocking member according to an embodiment of the present invention.

8 to 10, the blocking member 350 blocks the mounting tape 71 from being exposed to the plasma. The blocking member 350 seats the substrate 50 on the upper surface of the susceptor 320 and lifts the substrate 50 placed on the susceptor 320. The blocking member 350 includes a blocking ring 351 and an elevating member 355.

The blocking ring 351 is located on the top of the susceptor 320 and covers the gap between the wafer 52c and the frame ring 71. [ The blocking ring 351 is made of a ceramic material. The blocking ring 351 may have a ring shape and the inner diameter may be smaller than the circumference of the wafer 52c and the outer diameter may be equal to or smaller than the outer diameter of the frame ring 71. [ The blocking ring 351 has a width capable of covering the outer edge region of the frame ring 71 from the edge region of the wafer 52c. The blocking ring 351 has a body 352, a medial portion 353, and an outer portion 354. The body 352 is located facing the region of the mounting tape 72 exposed to the outside in a ring shape. The body 352 is spaced apart from the mounting tape 72 by a predetermined distance. The inner side portion 353 extends downwardly inclined from the inside of the body 352, and an end of the inner side portion 353 contacts the edge region of the wafer 52c. The outer side portion 354 is inclined downward from the outside of the body 352, and the end of the outer side portion 354 is in contact with the frame ring 71. Mentioned blocking ring 351 is not in contact with the mounting tape 71 and covers an area between the wafer 52c and the frame ring 71. [

The blocking ring 351 blocks the mounting tape 72 from being exposed to the plasma. The blocking ring 351 contacts the wafer 52c at the inner end 353 and comes into contact with the frame ring 71 at the outer end 354 so that plasma inflow is blocked to the mounting tape 72 side. When the mounting tape 72 is exposed to the plasma, the mounting tape 72 is stretched and the handling of the substrate 50 becomes a problem, and the mounting tape 72 is deformed. The denatured tape 72 is not only difficult to remove, but also has a problem that some of the denatured tape 72 remains on the wafer 52c without being completely removed. The blocking ring 71 prevents the mounting tape 72 from being exposed to the plasma to prevent the above-described problem from occurring.

The lifting member 355 lifts the blocking ring 351. When the substrate 50 is placed on the susceptor 320 or lifted by the susceptor 320, the lifting member 355 lifts the blocking ring 351. Then, while the substrate 50 is placed on the susceptor 320, the lifting member 355 lowers the blocking ring 351 to cover the mounting taper 72. The elevating member 355 includes a moving rod 361, a receiving piece 365, and a driving unit 368. [

The moving rod 361 supports the blocking ring 351 and moves the blocking ring 351 up and down. According to the embodiment, the moving rod 361 is provided with a structure in which three rods 362 to 364 are connected to each other. The first rod 362 supports the blocking ring 351. The second rod 363 supports the first rod 362 at a lower portion of the first rod 362 and a space in which the first rod 362 can move up and down is formed inside. The first rod 362 may move up and down to be located inside the second rod 363 and on the second rod 363.

The third rod 364 supports the second rod 363 in the lower portion of the second rod 363 and a space in which the third rod 364 can move up and down is formed inside. The second rod 363 may move in the vertical direction and be located on the inner side of the third rod 364 and the upper side of the third rod 364.

The driving unit 368 moves the moving rod 361 up and down. Specifically, the driving unit 368 lifts the first rod 362 and the second rod 363 individually. The second rod 363 moves up and down with respect to the third rod 364 while the first rod 362 ascends and descends with respect to the second rod 363 by driving the driving unit 368. [

The supporting piece 365 engages with the moving rod 361 and moves together with the moving rod 361. According to the embodiment, the support piece 365 engages the second rod 363. The support piece 365 extends from the second rod 363 toward the susceptor 320 and has an end located in the accommodation space 321. [ With the movement of the second rod 363, the support piece 365 moves up and down along the accommodation space 321. When the support piece 365 is located at the upper portion of the accommodation space 321, the frame ring 71 is seated. The substrate 50 is lowered with the descent of the support piece 365 while the frame ring 71 is seated on the support piece 365. [ The substrate 50 is placed on the upper surface of the susceptor 320 in the process of lowering the support piece 365. On the other hand, when the support piece 365 moves upward in the accommodation space 321, the frame ring 71 is placed on the support piece 365. The substrate 50 is picked up from the susceptor 320 in the process of lifting the support piece 365.

Hereinafter, a method of processing a substrate using the above-described substrate processing apparatus will be described.

The first conveying robot 220 moves the hand portion 223 to the inside of the carrier 100 to grip the frame ring 71. [ The upper hand 225 presses the frame ring 71 to grip the substrate 50 while the lower hand 224 of the hand unit 223 is positioned below the frame ring 71. [ The hand unit 223 retreats while grasping the substrate 50 and the first transfer robot 220 transfers the substrate 50 to be stored in the load lock chamber 230. [

The second conveying robot 250 carries the substrate 50 in a state in which the hand 251 grasps the frame ring 71 of the substrate 50 housed in the load lock chamber 230. The second conveying robot 250 transfers the substrate 50 while holding it, and provides the processed substrate to the inside of the process chamber 310.

In the process chamber 310, the first rod 362 and the second rod 363 move up and down to stand the support piece 365. The substrate 50 is seated on the support piece 365 by the frame ring 71. [ The second rod 363 is lowered in a state in which the substrate 50 is supported by the support piece 365. [ The substrate 50 is seated on the susceptor 320 in the process of lowering the support piece 365 together with the second rod 363. [ Thereafter, the blocking ring 351 is lowered together with the first rod 362 to cover the mounting tape 72.

The plasma supply unit 340 generates a plasma and supplies the generated plasma into the process chamber 310. The process gas is supplied from the process gas supply unit 344 to the inside of the dielectric tube 343 and the electromagnetic wave generated from the oscillator 341 is transferred into the dielectric tube 343 through the waveguide 342. Electromagnetic waves excite process gases into a plasma state. The plasma enters the diffusion chamber 314 and flows into the processing chamber 310 through the diffusion holes 314 and the distribution holes 331 of the showerhead 330. The plasma is supplied to the upper surface of the wafer 52c, and the flow of the plasma is limited to the mounting tape 72 by the blocking ring 351. The plasma removes the adhesive adhered to the upper surface of the wafer 52c. The gas and reaction by-products remaining in the process chamber 310 flow into the exhaust holes 411 through the holes of the exhaust plate 410 and are exhausted to the outside.

When the process is completed, the first rod 362 and the second rod 363 rise. The supporting piece 365 is lifted together with the second rod 363 to lift the substrate 50 from the susceptor 320. The hand part 251 of the second conveying robot 250 enters the inside of the process chamber 310 and grasps the frame ring 71 while the substrate 50 is supported on the support piece 365. The second transfer robot 250 takes out the substrate 50 from the process chamber 310 and transfers the substrate 50 to the load lock chamber 230.

The hand portion 223 of the first carrying robot 220 grasps the frame ring 71 of the substrate 50 stored in the load lock chamber 230 and transfers the substrate 50 to the carrier 100, do.

11 is a view showing a blocking member according to another embodiment of the present invention.

11, the inner end 453 of the blocking ring 451 is held at a predetermined interval from the upper surface of the wafer 52c. The blocking ring 451 covers between the wafer 52c and the frame ring 71 so that the mounting tape 72 is not exposed to the plasma.

3, the wafer 51b is attached to the mounting adhesive 72 after the molding 63 and the adhesive layer 55a remaining on the wafer 51c after the carrier 54 is removed. Is carried out. Alternatively, removal of the adhesive layer 55a may be performed prior to bonding the chip 61. [ According to the embodiment, after the carrier 54 is adhered to the FEOL wafer 51 and the back grinding process is performed, the carrier 54 is removed while the wafer 51a is attached to the mounting adhesive 72, The remaining adhesive layer 55a can be removed. Then, the chip 61 bonding process, the underfill process 62, and the molding process 63 are sequentially performed.

The foregoing detailed description is illustrative of the present invention. Furthermore, the foregoing is intended to illustrate and describe the preferred embodiments of the invention, and the invention may be used in various other combinations, modifications and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. In addition, the appended claims should be construed to include other embodiments.

1: substrate processing apparatus 10: load port
20: substrate transfer unit 30: plasma processing unit
50: substrate 71: frame ring
72: Mounting tape 52c: Wafer
100: Carrier 220: First conveying robot
224: lower hand 225: upper hand
250: second conveying robot 310: process chamber
320: susceptor 330: shower head
340: plasma supply part 350: blocking member
351: blocking ring 361: moving rod
365: support piece 368:

Claims (30)

delete delete An apparatus for processing a substrate,
A load port on which a carrier accommodating a plurality of substrates with back-grounded wafers is placed, on a mounting tape fixed to the frame ring;
A plasma processing unit for supplying a plasma to process an upper surface of the wafer; And
And a substrate transferring unit for transferring the substrate between the carrier and the plasma processing unit,
The plasma processing unit
A process chamber in which a space is formed;
A susceptor positioned within the process chamber and supporting the substrate;
A plasma supply unit for supplying plasma into the process chamber; And
A blocking member fixedly installed in the space and covering the mounting tape so as not to be exposed to the plasma,
The blocking member
A blocking ring that covers between the wafer and the frame ring and is not in contact with the mounting tape; And
And an elevating member for raising and lowering the blocking ring. The method of claim 3,
The blocking ring
A body having a ring shape and facing the mounting tape;
An inner side portion extending downwardly inclined from the inside of the body and having an end in contact with an edge region of the wafer; And
And an outer portion extending downwardly inclined from the outside of the body, the end of which is in contact with the frame ring. The method of claim 3,
The blocking ring
A body having a ring shape and facing the mounting tape;
An inner side portion extending downwardly inclined from the inside of the body and having an end portion spaced apart from a top surface of the wafer by a predetermined distance; And
And an outer portion extending downwardly inclined from the outside of the body, the end of which is in contact with the frame ring. The method according to claim 4 or 5,
Wherein the frame ring has a width capable of covering an outer edge region of the frame ring from an edge region of the wafer. The method of claim 3,
Wherein the blocking ring is made of a ceramic material. The method of claim 3,
The elevating member
A first rod supporting the blocking ring;
A second rod supporting the first rod at a lower portion of the first rod and having a space in which the first rod can be elevated inside;
A third rod supporting the second rod at a lower portion of the second rod and having a space in which the second rod can be elevated inside; And
And a driving unit for individually raising and lowering the first rod and the second rod,
Wherein the second rod is provided with a support piece for seating the substrate on the susceptor in a state of supporting the mounting ring,
Wherein an accommodating space is formed in an edge region of the susceptor so that the supporting piece can move in a vertical direction. 9. The method of claim 8,
Wherein the accommodating space is provided from the outer side of the susceptor to a point where an edge of the wafer is located inward. The method of claim 3,
The transfer unit
And a transfer robot for transferring the substrate, the transfer robot having a hand portion holding a part of the frame ring in a clamping manner. 11. The method of claim 10,
The hand
A lower hand on which a portion of the frame ring rests;
An upper hand positioned above the lower hand for pressing and fixing the frame ring placed on the lower hand; And
And a driving unit for moving the upper hand such that the upper hand is unfolded or folded with respect to the lower hand. 12. The method of claim 11,
Wherein a front end of the lower hand has a shape of arc having a curvature equal to that of the frame ring. delete An apparatus for processing a substrate,
A process chamber in which a space is formed;
A susceptor positioned inside the process chamber, the susceptor having a back-grounded wafer attached to a mounting tape fixed to the frame ring;
A plasma supply unit for supplying a plasma gas into the process chamber; And
A blocking member fixedly installed in the space and covering the mounting tape so as not to be exposed to the plasma,
The blocking member
A blocking ring that covers between the wafer and the frame ring of the substrate area placed on the susceptor and is not in contact with the mounting tape; And
And an elevating member for raising and lowering the blocking ring. 15. The method of claim 14,
Wherein the blocking ring has a width capable of covering an outer edge region of the frame ring from an edge region of the wafer. 15. The method of claim 14,
Wherein the blocking ring has an inner end in contact with an upper surface of the wafer and an outer end in contact with an upper surface of the frame ring. 15. The method of claim 14,
Wherein an inner end of the blocking ring maintains a predetermined gap with an upper surface of the wafer, and an outer end of the blocking ring contacts an upper surface of the frame ring. 15. The method of claim 14,
The elevating member
A moving rod to which the blocking ring engages at an upper end; And
And a driving unit for moving the moving rod up and down,
The moving rod
A supporting piece for supporting the mounting ring and descending with the moving rod to seat the substrate on the susceptor,
Wherein an accommodating space is formed in an edge region of the susceptor so that the receiving part can be lifted and lowered. delete A method of processing a substrate,
The carrying robot carries a back-grinding-finished wafer-attached substrate to a mounting tape fixed to the frame ring into the process chamber,
Placing the substrate on a susceptor provided in the process chamber,
A plasma is supplied into the process chamber to process an upper surface of the wafer,
Wherein the substrate placed on the susceptor is covered by a blocking ring provided within the process chamber such that the mounting tape is not exposed to the plasma. 21. The method of claim 20,
Wherein the blocking ring has a ring shape and covers an area between the wafer and the frame ring. 22. The method of claim 21,
Wherein the blocking ring covers an outer edge region of the frame ring from an edge region of the wafer. 21. The method of claim 20,
Wherein an inner end of the blocking ring contacts the wafer. 21. The method of claim 20,
Wherein an inner end of the blocking ring is spaced a predetermined distance from the wafer. 21. The method of claim 20,
The step of placing the substrate on the susceptor
Wherein the supporting ring is lowered together with the lowering of the moving rod in a state where the frame ring is placed on the supporting piece combined with the moving rod for moving the blocking ring. 21. The method of claim 20,
Wherein the carrying robot carries the substrate in a state in which a hand part grasps a part of the frame ring in a clamping manner. An apparatus for processing a substrate having a back-grounded wafer attached to a mounting tape fixed to the frame ring,
And a transfer robot for transferring the substrate, the transfer robot having a hand portion for gripping a part of the frame ring by a clamping method. CLAIMS 1. A method of processing substrates having a back-grounded wafer attached to a mounting tape fixed to the frame ring,
The hand of the carrier robot picks up the substrate from the carrier on which the substrates are mounted,
Wherein the hand portion picks up the substrate by grasping a part of the frame ring in a clamping manner. 28. The method of claim 27,
The hand unit includes:
A lower hand on which a portion of the frame ring rests;
An upper hand positioned above the lower hand for pressing and fixing the frame ring placed on the lower hand; And
And a driving unit for moving the upper hand such that the upper hand is unfolded or folded with respect to the lower hand. 30. The method of claim 29,
Wherein a front end of the lower hand has a shape of arc having a curvature equal to that of the frame ring.

Images