TWM531055U - 具有３５個容置區的排列組態之晶圓載具 - Google Patents

具有３５個容置區的排列組態之晶圓載具 Download PDF

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TWM531055U
TWM531055U TW105205256U TW105205256U TWM531055U TW M531055 U TWM531055 U TW M531055U TW 105205256 U TW105205256 U TW 105205256U TW 105205256 U TW105205256 U TW 105205256U TW M531055 U TWM531055 U TW M531055U
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亞歷山大 古拉瑞
曼達 戴許潘德
阿尼魯 巴雷
由里 拉什科夫斯基
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維克儀器公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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Description

具有35個容置區的排列組態之晶圓載具
本創作係關於半導體製造技術，並且尤其是關於化學氣相沉積(CVD)製程及相關設備，用於在製程期間保持半導體晶圓。
在發光二極體(LED)和諸如鐳射二極體、光探測器和場效應電晶體的其它高性能器件的製造中，典型地使用化學氣相沉積(CVD)製程在藍寶石或矽基板之上使用諸如氮化鎵的材料生長薄膜堆疊結構。CVD工具包括一處理艙體，該處理艙體是密封環境以允許注入的氣體在基板(通常為晶圓的形式)上反應以生長薄膜層。這種製造設備的現行生產線的實例是由Plainview，New York的Veeco Instruments Inc.製造的TurboDisc®和MOCVD系統的EPIK系列。
控制諸如溫度、壓強和氣體流速的一些製程參數以獲得所希望的晶體生長。使用不同的材料和製程參數來生長不同層。例如，典型地，由諸如III-V族半導體的化合物半導體形成的器件是藉由使用金屬有機化學氣相沉積(MOCVD)生長連續的該化合物半導體層而形成的。在此製程中，晶圓被暴露於氣體的組合中，典型地，該氣體包括作為III族金屬的源的金屬有機化合物，並且更包括當晶圓保持在升高的溫度下時在晶圓表面上流動的V族元素的源。通常，金屬有機化合物和V族源與明顯不參與反應的載氣組合，該載氣例如是氮氣。III-V族半導體的一個實例是氮化鎵，可以在晶圓具有適當晶格間隙的基板(例如藍寶石晶圓)上 藉由有機鎵化合物和氨氣的反應來形成氮化鎵。在沉積氮化鎵和相關化合物期間一般將該晶圓保持在大約1000-1100℃的溫度下。
在藉由基板表面上的化學反應而發生晶體生長的MOCVD製程中，必須特別小心地控制製程參數以確保在所要求的條件下進行該化學反應。在製程條件中即使小的變化也可能不利地影響器件品質和生產良率。例如，如果沉積氮化鎵銦層(gallium and indium nitride layer)，晶圓表面溫度的變化將會引起沉積層的成分和帶隙的變化。因為銦具有相對高的蒸氣壓，在表面溫度較高的晶圓區域中該沉積層將會具有較低的銦比例和較大的帶隙。如果該沉積層為主動、LED結構的發光層，那麼由該晶圓形成的LED的輻射波長也將會變至不可接受的程度。
在MOCVD處理艙體中，在其上生長薄膜層的半導體晶圓設置於被稱作晶圓載具的快速旋轉的旋轉料架(carousel)上，以在反應艙體之內使它們的表面均勻暴露於氣體環境中，以沉積半導體材料。轉速是大約1000RPM。該晶圓載具典型地是由諸如石墨的高導熱材料機械加工出來的，並且經常塗覆有諸如碳化矽材料的保護層。每個晶圓載具具有一組圓形凹部(indentation)，或容置區(pocket)，在其頂表面中放置有單個的晶圓。典型地，晶圓被支撐為與每個容置區的底部表面成間隔關係以允許在該晶圓的邊緣周圍流動氣體。在U.S.專利申請公開No.2012/0040097、U.S.專利No.8092599、U.S.專利No.8021487、U.S.專利申請公開No.2007/0186853、U.S.專利No.6902623、U.S.專利No.6506252和U.S.專利No.6492625中描述了有關技術的一些實例，藉由引用將其公開內容合併於此。
晶圓載具被支撐於反應艙體中的轉軸(spindle)上，使得具有晶圓的暴露表面的晶圓載具的頂表面向上朝向氣體分配 裝置。當該轉軸旋轉時，該氣體被向下引導到該晶圓載具的頂表面上並且經過該頂表面流向該晶圓載具的外周。使用過的氣體透過設置在該晶圓載具下方的通口從反應艙體中排出。藉由加熱元件將該晶圓載具保持在期望的升高溫度，該加熱元件典型地是設置在該晶圓載具的底表面之下的電阻加熱元件。將這些加熱元件保持在比該晶圓表面的期望溫度還要高的溫度，然而典型地將該氣體分配裝置保持在遠低於期望反應溫度的溫度，以防止氣體過早反應。因而，熱量從該加熱元件向該晶圓載具的底表面傳輸並向上通過晶圓載具流向單個晶圓。
在晶圓之上的氣流依賴於每個晶圓的徑向位置而變化，其中位於最外側的晶圓會具有較高流動率，此乃他們在轉動過程中較快的速度所導致。甚至在每個單個晶圓上都可能存在溫度非均勻性，即冷點和熱點。影響溫度非均勻性的形成的一個可變因素是晶圓載具內的容置區的形狀。通常，容置區形狀在該晶圓載具的表面中形成圓形。由於晶圓載具旋轉，因而該晶圓在其最外面的邊緣(即離旋轉軸最遠的邊緣)處受到實質性的向心力，導致晶圓擠靠該晶圓載具中各個容置區的內壁。在這種情況下，在晶圓的這些外部邊緣和容置區的邊緣之間存在緊密接觸。向晶圓的這些最外面部分的增加的熱傳導導致更大的溫度非均勻性，進一步使上述的問題惡化。既有的處理方式為藉由增加晶圓的邊緣和容置區的內壁之間的間隙來最小化溫度非均勻性，包括將晶圓設計為邊緣的一部分上是平的(即平邊晶圓)。晶圓的此平坦部分產生間隙並減小與該容置區的內壁的接觸點，由此緩和溫度非均勻性。其他影響晶圓載具所支撐晶圓各處的熱均勻性的因素包括晶圓載具的熱傳輸和發射特性，並結合晶圓容置區的佈局。
與溫度均勻性需求相關的，對於晶圓載具的另一個 所希望的特性是增加CVD製程的生產量。在增加製程生產量中該晶圓載具的角色是保持大量的單個晶圓。提供具有更多晶圓的晶圓載具佈局影響熱模型。例如，由於來自晶圓載具邊緣的輻射熱損耗，靠近邊緣的晶圓載具的部分傾向處在比其他部分更低的溫度下。
因此，需要在其中解決高密度佈局中的溫度均勻性和機械應力的用於晶圓載具的實用解決方案。
本創作提出一種晶圓載具，其包括新的容置區配置。本文所描述的配置係有助於熱傳輸，以及有助於達成圓晶圓生長之容置區的高填充密度(high packing density)。依據本創作之一實施例，提出一種包括布置於頂表面之35個容置區的晶圓載具，其係用於化學氣相沉積裝置中，該晶圓載具包括：本體，該本體具有彼此相對布置的頂表面和底表面；以及複數個容置區，該複數個容置區限定在該晶圓載具的該頂表面中；其中該複數個容置區係由總共三十五個的容置區組成，每個容置區係沿著三個圓中的一個圓而布置，其中該三個圓係彼此同心並且係與由該頂表面的周邊所形成的圓形輪廓同心。又，依據本創作之另一實施例，該複數個容置區中的五個容置區係環繞該三個圓中的第一個圓而布置；該複數個容置區中的十二個容置區係環繞該三個圓中的第二個圓而布置；以及該複數個容置區中的十八個容置區係環繞該三個圓中的第三個圓而布置。另外，依據本創作之其他實施例，該第一個圓被該第二個圓圍繞，並且該第二個圓被該第三個圓圍繞。
142‧‧‧晶圓載具
146‧‧‧本體
148‧‧‧頂表面
152‧‧‧底表面
162、162A、162B‧‧‧容置區
164‧‧‧鎖定特徵部
166‧‧‧側壁
168‧‧‧基板
170‧‧‧孔隙空間
R1、R2、R3‧‧‧圓
在連同圖式考慮下列本創作各種實施例的詳細描述 後，可以更完整地理解本創作，其中：圖1是根據一實施例的具有35個容置區配置的晶圓載具的立體圖。
圖2是根據一實施例的具有35個容置區配置的晶圓載具的俯視圖。
圖3是根據一實施例的具有35個容置區配置的晶圓載具的側視圖。
圖4是根據一實施例的具有35個容置區配置的晶圓載具的仰視圖。
圖5是根據一實施例的具有35個容置區配置的晶圓載具的部分細節圖，其顯示來自立體圖的單個容置區。
圖1是根據一實施例的晶圓載具142的立體圖，該晶圓載具142係用於化學氣相沉積裝置中。圖2是同一晶圓載具142的俯視圖。晶圓載具142包括：具有頂表面148的本體146，和限定於其中的三十五個容置區162。在圖1和圖2所示的實施例中，容置區162布置在三個圓R1、R2和R3中，每個圓與由本體146的外邊緣限定的圓是同心的。在徑向內圓R1中，五個容置區162在方位上均勻地間隔開。同樣地，在徑向中圓R2中，十二個容置區162在方位上均勻地間隔開。在徑向外圓R3中，十八個容置區162在方位上均勻地間隔開。每個容置區162是形成在本體146中的孔口，該孔口實質上延伸垂直於頂表面148所配置的平面。
在圖1和圖2中描繪的容置區的布置的優點在於：在頂表面148上保持相對高密度的容置區162的同時，其提供了期望水準的熱均勻性。而容置區162的尺寸可容納於此頂表面148的區域中。
如圖1和圖2所示，在各個圓R1、R2與R3中，容置區162相互交疊並且因而生長在每個容置區162中的晶圓與生長在相鄰的容置區162中的晶圓連接。當完全地生長時，生長在容置區162中的所有晶圓與生長在相同圓中的任何容置區162中的每個其它晶圓機械互連。
圖3為一側視圖，其為圖1和圖2的晶圓載具142的側視圖。在圖3所示的視圖中，可以看出頂表面148和底表面152之間的尺寸上的相對差異。尤其是，頂表面更如圖3中顯示，往頁面頂部及底部延伸，或者在圖1和圖2中顯示的圖中進一步向徑向延伸。先前在圖1和圖2中描繪的每個容置區162都從頂表面148朝向底表面152延伸。底表面152提供固態基底，在該固態基底上可以將晶圓生長在晶圓載具142中。
圖4是先前關於圖1至圖3所描述的晶圓載具142的仰視圖。如圖4中所示，晶圓載具142包括在底表面152的中心的鎖定特徵部164。
圖5為顯示其中一個容置區162的局部立體圖。每個容置區162包括側壁166，除了孔隙空間170之外，其基本上是圓柱形的，其中容置區162與同一圓中的相鄰的容置區162A和162B交疊。由側壁166形成的圓柱的底部是基板168。
這些實施例是用作示例的目的而非限制。附加的實施例為在申請專利範圍內。另外，儘管已參考具體實施例來描述本創作的多個方面，但是所屬領域的技術人員將會認識到可以在不脫離由申請專利範圍所限定的本創作的範圍的情況下對形式和細節上作出改變。
142‧‧‧晶圓載具
148‧‧‧頂表面
162‧‧‧容置區
R1、R2、R3‧‧‧圓

Claims (3)

  1. 一種晶圓載具，其係用於化學氣相沉積裝置中，該晶圓載具包括：本體，該本體具有彼此相對布置的頂表面和底表面；以及複數個容置區，該複數個容置區限定在該晶圓載具的該頂表面中；其中該複數個容置區係由總共三十五個的容置區組成，每個容置區係沿著三個圓中的一個圓而布置，其中該三個圓係彼此同心並且係與由該頂表面的周邊所形成的圓形輪廓同心。
  2. 如請求項1所述之晶圓載具，其中：該複數個容置區中的五個容置區係環繞該三個圓中的第一個圓而布置；該複數個容置區中的十二個容置區係環繞該三個圓中的第二個圓而布置；以及該複數個容置區中的十八個容置區係環繞該三個圓中的第三個圓而布置。
  3. 如請求項2所述之晶圓載具，其中該第一個圓被該第二個圓圍繞，並且該第二個圓被該第三個圓圍繞。
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