TWI796950B - 半導體晶粒的拾取裝置以及拾取方法 - Google Patents

半導體晶粒的拾取裝置以及拾取方法 Download PDF

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Publication number
TWI796950B
TWI796950B TW111105193A TW111105193A TWI796950B TW I796950 B TWI796950 B TW I796950B TW 111105193 A TW111105193 A TW 111105193A TW 111105193 A TW111105193 A TW 111105193A TW I796950 B TWI796950 B TW I796950B
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TW
Taiwan
Prior art keywords
stage
wafer sheet
adsorption
peripheral portion
semiconductor crystal
Prior art date
Application number
TW111105193A
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English (en)
Chinese (zh)
Other versions
TW202234567A (zh
Inventor
前田徹
尾又洋
Original Assignee
日商新川股份有限公司
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Application filed by 日商新川股份有限公司 filed Critical 日商新川股份有限公司
Publication of TW202234567A publication Critical patent/TW202234567A/zh
Application granted granted Critical
Publication of TWI796950B publication Critical patent/TWI796950B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW111105193A 2021-02-17 2022-02-14 半導體晶粒的拾取裝置以及拾取方法 TWI796950B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2021/005985 WO2022176076A1 (ja) 2021-02-17 2021-02-17 半導体ダイのピックアップ装置及びピックアップ方法
WOPCT/JP2021/005985 2021-02-17

Publications (2)

Publication Number Publication Date
TW202234567A TW202234567A (zh) 2022-09-01
TWI796950B true TWI796950B (zh) 2023-03-21

Family

ID=82930356

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111105193A TWI796950B (zh) 2021-02-17 2022-02-14 半導體晶粒的拾取裝置以及拾取方法

Country Status (6)

Country Link
US (1) US20230129417A1 (https=)
JP (1) JP7145557B1 (https=)
KR (1) KR102840340B1 (https=)
CN (1) CN115226411B (https=)
TW (1) TWI796950B (https=)
WO (1) WO2022176076A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102761336B1 (ko) * 2021-03-23 2025-02-04 가부시키가이샤 신가와 웨이퍼 시트의 초기 박리 발생 방법 및 반도체 다이의 픽업 장치
US20240170442A1 (en) * 2022-11-18 2024-05-23 Asmpt Singapore Pte. Ltd. Hybrid bonding of a thin semiconductor die

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115482B2 (en) * 2003-09-17 2006-10-03 Renesas Technology Corp. Method of manufacturing semiconductor device
US9929036B2 (en) * 2014-06-18 2018-03-27 Manufacturing Integration Technology Ltd System and method for peeling a semiconductor chip from a tape using a multistage ejector

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62170637U (https=) * 1986-04-17 1987-10-29
JPH02312258A (ja) * 1989-05-26 1990-12-27 Sumitomo Electric Ind Ltd チップ実装装置
JPH04177860A (ja) * 1990-11-13 1992-06-25 Hitachi Ltd ピックアップ装置
JPH06140497A (ja) * 1992-10-27 1994-05-20 Hitachi Ltd ピックアップ装置
JPH1092907A (ja) 1996-09-13 1998-04-10 Nec Corp 半導体チップのピックアップユニット及びそのピックア ップ方法
JP3945632B2 (ja) * 2002-02-06 2007-07-18 シャープ株式会社 チップのピックアップ装置、その製造方法、及び半導体製造装置
JP2010129588A (ja) * 2008-11-25 2010-06-10 Renesas Technology Corp 半導体集積回路装置の製造方法
JP5287276B2 (ja) * 2009-01-15 2013-09-11 Ｔｄｋ株式会社 電子部品のピックアップ方法及びピックアップ装置
JP5324942B2 (ja) * 2009-01-28 2013-10-23 パナソニック株式会社 ダイシング方法およびエキスパンド装置
JP2012059829A (ja) * 2010-09-07 2012-03-22 Elpida Memory Inc 半導体チップの剥離装置、ダイボンディング装置、半導体チップの剥離方法、半導体装置の製造方法
US9079318B2 (en) * 2012-12-20 2015-07-14 Infineon Technologies Ag Self-aligning pick-up head and method for manufacturing a device with the self-aligning pick-up head
JP6366223B2 (ja) * 2013-02-25 2018-08-01 東レエンジニアリング株式会社 半導体チップのピックアップ装置
JP6349496B2 (ja) * 2014-02-24 2018-07-04 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
JP6653273B2 (ja) * 2017-01-26 2020-02-26 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
TWI745710B (zh) * 2018-07-06 2021-11-11 日商新川股份有限公司 半導體晶粒的拾取系統

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115482B2 (en) * 2003-09-17 2006-10-03 Renesas Technology Corp. Method of manufacturing semiconductor device
US9929036B2 (en) * 2014-06-18 2018-03-27 Manufacturing Integration Technology Ltd System and method for peeling a semiconductor chip from a tape using a multistage ejector

Also Published As

Publication number Publication date
KR102840340B1 (ko) 2025-07-31
US20230129417A1 (en) 2023-04-27
KR20220119395A (ko) 2022-08-29
TW202234567A (zh) 2022-09-01
JPWO2022176076A1 (https=) 2022-08-25
JP7145557B1 (ja) 2022-10-03
WO2022176076A1 (ja) 2022-08-25
CN115226411A (zh) 2022-10-21
CN115226411B (zh) 2025-08-08

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