JPWO2022176076A1 - - Google Patents
Info
- Publication number
- JPWO2022176076A1 JPWO2022176076A1 JP2022519698A JP2022519698A JPWO2022176076A1 JP WO2022176076 A1 JPWO2022176076 A1 JP WO2022176076A1 JP 2022519698 A JP2022519698 A JP 2022519698A JP 2022519698 A JP2022519698 A JP 2022519698A JP WO2022176076 A1 JPWO2022176076 A1 JP WO2022176076A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
- H10P72/7442—Separation by peeling
- H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/005985 WO2022176076A1 (ja) | 2021-02-17 | 2021-02-17 | 半導体ダイのピックアップ装置及びピックアップ方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022176076A1 true JPWO2022176076A1 (https=) | 2022-08-25 |
| JP7145557B1 JP7145557B1 (ja) | 2022-10-03 |
| JPWO2022176076A5 JPWO2022176076A5 (https=) | 2023-01-24 |
Family
ID=82930356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022519698A Active JP7145557B1 (ja) | 2021-02-17 | 2021-02-17 | 半導体ダイのピックアップ装置及びピックアップ方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230129417A1 (https=) |
| JP (1) | JP7145557B1 (https=) |
| KR (1) | KR102840340B1 (https=) |
| CN (1) | CN115226411B (https=) |
| TW (1) | TWI796950B (https=) |
| WO (1) | WO2022176076A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102761336B1 (ko) * | 2021-03-23 | 2025-02-04 | 가부시키가이샤 신가와 | 웨이퍼 시트의 초기 박리 발생 방법 및 반도체 다이의 픽업 장치 |
| US20240170442A1 (en) * | 2022-11-18 | 2024-05-23 | Asmpt Singapore Pte. Ltd. | Hybrid bonding of a thin semiconductor die |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62170637U (https=) * | 1986-04-17 | 1987-10-29 | ||
| JPH02312258A (ja) * | 1989-05-26 | 1990-12-27 | Sumitomo Electric Ind Ltd | チップ実装装置 |
| JPH04177860A (ja) * | 1990-11-13 | 1992-06-25 | Hitachi Ltd | ピックアップ装置 |
| JPH06140497A (ja) * | 1992-10-27 | 1994-05-20 | Hitachi Ltd | ピックアップ装置 |
| JPH1092907A (ja) | 1996-09-13 | 1998-04-10 | Nec Corp | 半導体チップのピックアップユニット及びそのピックア ップ方法 |
| JP3945632B2 (ja) * | 2002-02-06 | 2007-07-18 | シャープ株式会社 | チップのピックアップ装置、その製造方法、及び半導体製造装置 |
| JP4574251B2 (ja) * | 2003-09-17 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2010129588A (ja) * | 2008-11-25 | 2010-06-10 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP5287276B2 (ja) * | 2009-01-15 | 2013-09-11 | Ｔｄｋ株式会社 | 電子部品のピックアップ方法及びピックアップ装置 |
| JP5324942B2 (ja) * | 2009-01-28 | 2013-10-23 | パナソニック株式会社 | ダイシング方法およびエキスパンド装置 |
| JP2012059829A (ja) * | 2010-09-07 | 2012-03-22 | Elpida Memory Inc | 半導体チップの剥離装置、ダイボンディング装置、半導体チップの剥離方法、半導体装置の製造方法 |
| US9079318B2 (en) * | 2012-12-20 | 2015-07-14 | Infineon Technologies Ag | Self-aligning pick-up head and method for manufacturing a device with the self-aligning pick-up head |
| JP6366223B2 (ja) * | 2013-02-25 | 2018-08-01 | 東レエンジニアリング株式会社 | 半導体チップのピックアップ装置 |
| JP6349496B2 (ja) * | 2014-02-24 | 2018-07-04 | 株式会社新川 | 半導体ダイのピックアップ装置及びピックアップ方法 |
| SG10201403372SA (en) * | 2014-06-18 | 2016-01-28 | Mfg Integration Technology Ltd | System and method for peeling a semiconductor chip from a tape using a multistage ejector |
| JP6653273B2 (ja) * | 2017-01-26 | 2020-02-26 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
| TWI745710B (zh) * | 2018-07-06 | 2021-11-11 | 日商新川股份有限公司 | 半導體晶粒的拾取系統 |
-
2021
- 2021-02-17 WO PCT/JP2021/005985 patent/WO2022176076A1/ja not_active Ceased
- 2021-02-17 JP JP2022519698A patent/JP7145557B1/ja active Active
- 2021-02-17 KR KR1020227022193A patent/KR102840340B1/ko active Active
- 2021-02-17 US US17/908,541 patent/US20230129417A1/en not_active Abandoned
- 2021-02-17 CN CN202180006455.2A patent/CN115226411B/zh active Active
-
2022
- 2022-02-14 TW TW111105193A patent/TWI796950B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102840340B1 (ko) | 2025-07-31 |
| US20230129417A1 (en) | 2023-04-27 |
| KR20220119395A (ko) | 2022-08-29 |
| TW202234567A (zh) | 2022-09-01 |
| JP7145557B1 (ja) | 2022-10-03 |
| WO2022176076A1 (ja) | 2022-08-25 |
| TWI796950B (zh) | 2023-03-21 |
| CN115226411A (zh) | 2022-10-21 |
| CN115226411B (zh) | 2025-08-08 |
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