TWI789309B - 預濕模組、脫氣液循環系統、及預濕方法 - Google Patents

預濕模組、脫氣液循環系統、及預濕方法 Download PDF

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Publication number
TWI789309B
TWI789309B TW111119850A TW111119850A TWI789309B TW I789309 B TWI789309 B TW I789309B TW 111119850 A TW111119850 A TW 111119850A TW 111119850 A TW111119850 A TW 111119850A TW I789309 B TWI789309 B TW I789309B
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TW
Taiwan
Prior art keywords
substrate
degassing
liquid
processed
tank
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TW111119850A
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English (en)
Chinese (zh)
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TW202302923A (zh
Inventor
関正也
矢作光敏
山田展也
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日商荏原製作所股份有限公司
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Priority claimed from JP2021154525A external-priority patent/JP7008863B1/ja
Application filed by 日商荏原製作所股份有限公司 filed Critical 日商荏原製作所股份有限公司
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Publication of TWI789309B publication Critical patent/TWI789309B/zh
Publication of TW202302923A publication Critical patent/TW202302923A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • C23C18/163—Supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW111119850A 2021-05-31 2022-05-27 預濕模組、脫氣液循環系統、及預濕方法 TWI789309B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
WOPCT/JP2021/020612 2021-05-31
PCT/JP2021/020612 WO2022254485A1 (ja) 2021-05-31 2021-05-31 プリウェットモジュール、およびプリウェット方法
JP2021154525A JP7008863B1 (ja) 2021-05-31 2021-09-22 プリウェットモジュール、脱気液循環システム、およびプリウェット方法
JP2021-154525 2021-09-22

Publications (2)

Publication Number Publication Date
TWI789309B true TWI789309B (zh) 2023-01-01
TW202302923A TW202302923A (zh) 2023-01-16

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TW111119850A TWI789309B (zh) 2021-05-31 2022-05-27 預濕模組、脫氣液循環系統、及預濕方法

Country Status (6)

Country Link
US (2) US11833551B2 (https=)
JP (1) JPWO2022254485A1 (https=)
KR (1) KR102467232B1 (https=)
CN (2) CN118756273A (https=)
TW (1) TWI789309B (https=)
WO (1) WO2022254485A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020196506A1 (ja) * 2019-03-28 2020-10-01 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20250038014A1 (en) * 2022-08-08 2025-01-30 Ebara Corporation Pre-wet module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201619424A (zh) * 2014-10-08 2016-06-01 應用材料股份有限公司 真空預先潤濕設備及方法
TW201839181A (zh) * 2016-12-28 2018-11-01 日商荏原製作所股份有限公司 用以處理基板的方法及裝置

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JPS387417Y1 (https=) * 1961-06-03 1963-04-24
JPS4531726B1 (https=) * 1967-02-18 1970-10-14
JPS473521B1 (https=) * 1967-12-28 1972-01-31
JPS518898Y1 (https=) * 1969-10-11 1976-03-09
JPS5879404A (ja) * 1981-11-05 1983-05-13 Japanese National Railways<Jnr> 車両の減速照査器
JP3886328B2 (ja) * 2000-09-19 2007-02-28 大日本スクリーン製造株式会社 基板メッキ装置
JP4323930B2 (ja) * 2003-11-18 2009-09-02 キヤノン株式会社 薬液処理方法
JP2009221521A (ja) * 2008-03-14 2009-10-01 Ebara Corp めっき方法及びめっき装置
US8501025B2 (en) * 2010-03-31 2013-08-06 Dainippon Screen Mfg. Co., Ltd. Substrate treatment apparatus and substrate treatment method
JP5920867B2 (ja) * 2011-09-29 2016-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6191497B2 (ja) * 2014-02-19 2017-09-06 信越化学工業株式会社 電着装置及び希土類永久磁石の製造方法
US10262876B2 (en) * 2015-02-16 2019-04-16 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6543543B2 (ja) * 2015-09-18 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄装置および基板洗浄方法
KR20170027746A (ko) * 2017-01-20 2017-03-10 유진인스텍 주식회사 소재의 표면처리정도 측정방법 및 시스템
JP6857531B2 (ja) * 2017-03-31 2021-04-14 株式会社荏原製作所 めっき方法及びめっき装置
JP7083695B2 (ja) * 2018-05-11 2022-06-13 株式会社荏原製作所 バンプ高さ検査装置、基板処理装置、バンプ高さ検査方法、記憶媒体
JP7291030B2 (ja) * 2018-09-06 2023-06-14 株式会社荏原製作所 基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201619424A (zh) * 2014-10-08 2016-06-01 應用材料股份有限公司 真空預先潤濕設備及方法
TW201839181A (zh) * 2016-12-28 2018-11-01 日商荏原製作所股份有限公司 用以處理基板的方法及裝置

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Publication number Publication date
JPWO2022254485A1 (https=) 2022-12-08
WO2022254485A1 (ja) 2022-12-08
CN114752976A (zh) 2022-07-15
US20240050992A1 (en) 2024-02-15
US11833551B2 (en) 2023-12-05
CN118756273A (zh) 2024-10-11
US20220379352A1 (en) 2022-12-01
CN114752976B (zh) 2024-08-13
KR102467232B1 (ko) 2022-11-16
TW202302923A (zh) 2023-01-16
US12076760B2 (en) 2024-09-03

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