TWI758133B - 製備多層結構的方法 - Google Patents

製備多層結構的方法 Download PDF

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TWI758133B
TWI758133B TW110109587A TW110109587A TWI758133B TW I758133 B TWI758133 B TW I758133B TW 110109587 A TW110109587 A TW 110109587A TW 110109587 A TW110109587 A TW 110109587A TW I758133 B TWI758133 B TW I758133B
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single crystal
crystal semiconductor
layer
silicon
substrate
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TW110109587A
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Chinese (zh)
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TW202131500A (zh
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傑佛瑞 L 立柏特
劉慶旻
王剛
安德魯 M 瓊斯
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環球晶圓股份有限公司
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    • H10P90/1904—Preparing vertically inhomogeneous wafers
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
TW110109587A 2016-12-05 2017-12-05 製備多層結構的方法 TWI758133B (zh)

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US201662429922P 2016-12-05 2016-12-05
US62/429,922 2016-12-05

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TWI758133B true TWI758133B (zh) 2022-03-11

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TW106142589A TWI727123B (zh) 2016-12-05 2017-12-05 高電阻率絕緣體上矽結構及其製造方法

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US (2) US10468295B2 (https=)
EP (2) EP4009361B1 (https=)
JP (2) JP6801105B2 (https=)
KR (2) KR102587815B1 (https=)
CN (2) CN110352484B (https=)
SG (1) SG10201913059PA (https=)
TW (2) TWI758133B (https=)
WO (1) WO2018106535A1 (https=)

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FR3137493B1 (fr) * 2022-06-29 2024-10-04 Soitec Silicon On Insulator Procede de fabrication d’une structure comportant une couche barriere a la diffusion d’especes atomiques
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EP4627621A1 (fr) 2022-11-29 2025-10-08 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes
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