KR102587815B1 - 높은 저항률 실리콘-온-절연체 구조 및 그의 제조 방법 - Google Patents

높은 저항률 실리콘-온-절연체 구조 및 그의 제조 방법 Download PDF

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KR102587815B1
KR102587815B1 KR1020217028576A KR20217028576A KR102587815B1 KR 102587815 B1 KR102587815 B1 KR 102587815B1 KR 1020217028576 A KR1020217028576 A KR 1020217028576A KR 20217028576 A KR20217028576 A KR 20217028576A KR 102587815 B1 KR102587815 B1 KR 102587815B1
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single crystal
crystal semiconductor
silicon
layer
ohm
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KR20210115049A (ko
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제프리 엘. 리버트
칭민 류
강 왕
앤드류 엠. 존스
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글로벌웨이퍼스 씨오., 엘티디.
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
KR1020217028576A 2016-12-05 2017-12-01 높은 저항률 실리콘-온-절연체 구조 및 그의 제조 방법 Active KR102587815B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662429922P 2016-12-05 2016-12-05
US62/429,922 2016-12-05
PCT/US2017/064248 WO2018106535A1 (en) 2016-12-05 2017-12-01 High resistivity silicon-on-insulator structure and method of manufacture thereof
KR1020197019172A KR102301594B1 (ko) 2016-12-05 2017-12-01 높은 저항률 실리콘-온-절연체 구조 및 그의 제조 방법

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KR102587815B1 true KR102587815B1 (ko) 2023-10-10

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KR1020197019172A Active KR102301594B1 (ko) 2016-12-05 2017-12-01 높은 저항률 실리콘-온-절연체 구조 및 그의 제조 방법

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US (2) US10468295B2 (https=)
EP (2) EP4009361B1 (https=)
JP (2) JP6801105B2 (https=)
KR (2) KR102587815B1 (https=)
CN (2) CN110352484B (https=)
SG (1) SG10201913059PA (https=)
TW (2) TWI758133B (https=)
WO (1) WO2018106535A1 (https=)

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JP6447439B2 (ja) * 2015-09-28 2019-01-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
US10622247B2 (en) * 2016-02-19 2020-04-14 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a buried high resistivity layer
FR3066858B1 (fr) * 2017-05-23 2019-06-21 Soitec Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence
CN107611144B (zh) * 2017-09-19 2019-10-11 武汉华星光电技术有限公司 一种层间绝缘层的制备方法、层间绝缘层及液晶显示面板
US10943813B2 (en) 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
FR3098642B1 (fr) * 2019-07-12 2021-06-11 Soitec Silicon On Insulator procédé de fabrication d'une structure comprenant une couche mince reportée sur un support muni d’une couche de piégeage de charges
US11171015B2 (en) * 2019-09-11 2021-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer
FR3104322B1 (fr) * 2019-12-05 2023-02-24 Soitec Silicon On Insulator Procédé de formation d'un substrat de manipulation pour une structure composite ciblant des applications rf
US12176202B2 (en) * 2020-10-08 2024-12-24 Okmetic Oy Manufacture method of a high-resistivity silicon handle wafer for a hybrid substrate structure
FR3116151A1 (fr) * 2020-11-10 2022-05-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d’une structure de piegeage d’un substrat utile
TWM633935U (zh) * 2021-04-07 2022-11-11 日商信越化學工業股份有限公司 積層體的製造系統、積層體以及半導體裝置
JP7692638B2 (ja) * 2021-04-16 2025-06-16 テクタス コーポレイション 窒化ガリウム発光ダイオード用のシリコン二重ウェーハ基板
US11869869B2 (en) * 2021-04-22 2024-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Heterogeneous dielectric bonding scheme
US12533766B2 (en) 2021-06-11 2026-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Simplified carrier removable by reduced number of CMP processes
CN113437016A (zh) 2021-06-25 2021-09-24 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
EP4287239A1 (en) * 2022-06-02 2023-12-06 Imec VZW A low loss semiconductor substrate
FR3137493B1 (fr) * 2022-06-29 2024-10-04 Soitec Silicon On Insulator Procede de fabrication d’une structure comportant une couche barriere a la diffusion d’especes atomiques
FR3137490B1 (fr) * 2022-07-04 2024-05-31 Soitec Silicon On Insulator Procede de fabrication d’une structure comportant une couche barriere a la diffusion d’especes atomiques
WO2024115410A1 (fr) 2022-11-29 2024-06-06 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes.
JP2026511208A (ja) 2022-11-29 2026-04-10 ソイテック 電荷トラップ層を含む支持体、そのような支持体を含む複合基板、および関連する製造方法
EP4627621A1 (fr) 2022-11-29 2025-10-08 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes
FR3146020B1 (fr) 2023-02-20 2025-07-18 Soitec Silicon On Insulator Support comprenant une couche de piégeage de charges, substrat composite comprenant un tel support et procédé de fabrication associés
FR3163488A1 (fr) * 2024-06-12 2025-12-19 Soitec Substrat photonique et utilisation d’un tel substrat dans un dispositif de modulation optique
WO2025257265A1 (fr) * 2024-06-12 2025-12-18 Soitec Procédé de fabrication d'un substrat photonique
CN121240528A (zh) * 2025-12-01 2025-12-30 上海超硅半导体股份有限公司 绝缘体上半导体及其制备方法

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