TWI745355B - 稀土類薄膜磁鐵及其製造方法 - Google Patents
稀土類薄膜磁鐵及其製造方法 Download PDFInfo
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Abstract
一種稀土類薄膜磁鐵,以Nd、Fe、B為必要成分,其特徵在於:於在表面存在氧化膜之Si基板上具備Nd基底膜作為第1層,於前述第1層上具備Nd-Fe-B膜作為第2層。目的在於提供一種即便為相當於化學計量組成附近之組成範圍之0.120≦Nd/(Nd+Fe)<0.150的組成範圍,亦不會發生膜之剝離或基板之破壞,具有良好之磁特性之稀土類薄膜磁鐵及其製造方法。
Description
本發明係關於一種由形成於矽基板上之Nd-Fe-B膜構成之稀土類薄膜磁鐵及藉由脈衝雷射沈積法(PLD法)而形成之Nd-Fe-B膜之稀土類薄膜磁鐵之製造方法。
近年來,隨著電子機器之輕薄短小化,具有優異磁特性之稀土類磁鐵之小型化、高性能化不斷發展。其中,釹-鐵-硼(Nd-Fe-B)系磁鐵因於現有之磁鐵之中具有最高的最大能量乘積,故對於MEMS(Micro Electro Mechanical Systems,微機電系統)、或能量採集(環境發電)等能量領域、或醫療機器領域等之應用令人期待。
已知,此種稀土類磁鐵之薄膜通常使用濺鍍法(專利文獻1、非專利文獻1)或脈衝雷射沈積(PLD:Pulsed Laser Deposition)法(專利文獻2、非專利文獻2)等PVD:Physical Vapor Deposition(物理氣相沈積)法(非專利文獻3)製作。又,此等均於鉭或鉬等之金屬基板之上形成有稀土類磁鐵之薄膜。
另一方面,製作MEMS(Micro Electro Mechanical Systems)用之微磁元件之微致動器等時,為了有效地活用以矽(Si)半導體為基礎之
微影技術,強烈地要求於有通用性之Si基板上穩定地形成Nd-Fe-B膜之稀土類磁鐵薄膜。
於非專利文獻4記載有如下情形:若將具有與為化學計量組成之Nd2Fe14B相同程度之組成之磁鐵膜直接成膜於Si基板上,則由於成膜之熱處理步驟,因Si基板與Nd-Fe-B膜之線膨脹率差而產生應力,從而磁鐵膜剝離。而且,記載有如下情形:作為促進熱處理中之應力之鬆弛的方法,藉由將厚度50nm之MoSi2應變緩衝膜形成於Si基板上,形成即便2μm之厚度亦無剝離之Nd-Fe-B膜。
然而,於膜厚薄至數μm左右之情形時,即便自面內於垂直方向擷取之磁場受到退磁場之影響變小,又,於膜之剖面方向擷取之磁場不受退磁場之影響,但因磁鐵薄膜之體積較小,故變得難以將磁場供給至充分之區域。為了將充分之磁場擷取至膜之外部,要求至少10μm以上之厚度之膜。另一方面,於存在基板與膜之線膨脹率之差之情形時,隨著膜厚變厚,施加於膜與基板之界面之應變變大,故而更進一步容易發生膜之剝離,因此,長年期待即便於Si基板上將厚膜之Nd-Fe-B膜成膜亦不發生剝離之應變緩衝膜材料。
於非專利文獻5中記載有如下情形:使用脈衝雷射沈積法,藉由隔著具有Si與Nd2Fe14B之線膨脹係數之中間值之Ta膜,將最大膜厚至20μm且無剝離之Nd-Fe-B膜形成於Si基板上。然而,於形成膜厚超過20μm之膜的情形時,發生Nd-Fe-B膜與Ta膜之間產生剝離或者引起Si基板內部之破壞等問題。
專利文獻1:日本專利特開2012-207274號公報
專利文獻2:日本專利特開2009-091613號公報
專利文獻3:日本專利特願2014-218378
非專利文獻
非專利文獻1:N.M.Dempsey, A.Walther, F.May, D.Givord, K.Khlopkov, O.Gutfeisch: Appl.Phys.Lett. vol.90 (2007) 092509-1-092509-3.
非專利文獻2:H.Fukunaga, T.Kamikawatoko, M.Nakano, T.Yanai, F.Yamashita: J.Appl.Phys, vol.109(2011)07A758-1-07A758-3.
非專利文獻3:G.Rieger,J.Wecker, W.Rodewalt, W.Scatter, Fe.-W.Bach, T.Duda and W.Unterberg: J.Appl.Phys. vol.87(2000)5329-5331.
非專利文獻4:安達、伊佐、太田、奧田:陶瓷基盤工學中心年報vol.6(2006)46-50.
非專利文獻5:押領司、中野、柳井、福永、藤井:電氣學會磁學研究會資料,MAG-13-075(2013).
以前,本案發明人對抑制Nd-Fe-B膜與Si基板之剝離或於Si基板內部之破壞的方法進行了研究後,著眼於Nd之線膨脹係數處於Nd2Fe14B與Ta各自之線膨脹係數之中間,藉由將Nd含量多於化學計量組成之Nd-Fe-B膜直接形成於矽基板上,「存在於Si基板與Nd-Fe-B膜之界面之富Nd相」將各自之線膨脹率之差減輕,從而避免了膜之剝離或基板之破壞(專利文獻3)。
根據該方法,藉由利用脈衝雷射沈積法,將Nd含量多於化學計量組成之組成即滿足0.150≦Nd/(Nd+Fe)之Nd-Fe-B膜形成於附帶熱氧化膜之矽基板上,便可抑制膜之剝離或基板之破壞,實現160μm左右之厚膜化。然而,存在隨著Nd含量增加,雖保磁力上升,但另一方面,使剩餘磁化或最大能量乘積((BH)max)下降之問題。
本發明係為了解決此種課題而完成者,其目的在於提供一種稀土類薄膜磁鐵及可將該薄膜穩定成膜之稀土類薄膜磁鐵之製造方法,該稀土類薄膜磁鐵為形成於Si基板上之Nd-Fe-B膜之稀土類薄膜磁鐵,即便為相當於化學計量組成附近之組成範圍之0.120≦Nd/(Nd+Fe)<0.150,亦不產生膜之剝離或基板之破壞,具有良好之磁特性。
為了解決上述課題,本發明人等對Si基板與Nd-Fe-B膜間之界面之組織進行潛心研究後,結果獲得如下見解:藉由在使表面熱氧化之Si基板上形成Nd基底膜(緩衝層),而即便於此膜上形成組成滿足0.120≦Nd/(Nd+Fe)<0.150之Nd-Fe-B膜(功能層),亦可穩定地形成無剝離或基板破壞之膜。
基於此種見解,本發明提供以下之手段。
1)一種稀土類薄膜磁鐵,以Nd、Fe、B為必要成分,其特徵在於:於在表面存在氧化膜之Si基板上具備Nd基底膜作為第1層,於前述第1層上具備Nd-Fe-B膜作為第2層。
2)如上述1)記載之稀土類薄膜磁鐵,其特徵在於:前述第2層之Nd-Fe-B之組成(原子數比)滿足0.120≦Nd/(Nd+Fe)<0.150之條件式。
3)如於上述1)或2)記載之稀土類薄膜磁鐵,其特徵在於:前述第1層之膜厚為0.2μm以上5.0μm以下。
4)如於上述1)至3)中任一項記載之稀土類薄膜磁鐵,其特徵在於:前述第2層之膜厚為5μm以上50μm以下。
5)如於上述1)至4)中任一項記載之稀土類薄膜磁鐵,其特徵在於:前述氧化膜為熱氧化膜。
6)如於上述1)至5)中任一項記載之稀土類薄膜磁鐵,其特徵在於:於前述Si基板與前述Nd基底膜之間具備由Fe-Si-O構成之層。
7)如於上述1)至6)中任一項記載之稀土類薄膜磁鐵,其特徵在於:剩餘磁化為0.55T以上。
8)如於上述1)至7)中任一項記載之稀土類薄膜磁鐵,其特徵在於:保磁力為210kA/m以上。
9)如上述1)至8)中任一項記載之稀土類薄膜磁鐵,其特徵在於:最大能量乘積(BH)max為36kJ/m3以上。
10)一種稀土類薄膜之製造方法,其特徵在於:於Si基板上形成氧化膜,繼而,藉由脈衝雷射沈積法,於前述Si基板上形成Nd基底膜之第1層後,形成Nd-Fe-B膜之第2層,然後,進行熱處理。
11)如上述10)記載之稀土類薄膜之製造方法,其特徵在於:前述熱處理係於500℃以上800℃以下進行。
本發明係於使表面氧化而成之Si基板上形成Nd膜之基底膜(緩衝層),於此膜上形成組成(原子數比)滿足0.120≦Nd/(Nd+Fe)
<0.150之Nd-Fe-B膜,然後,進行熱處理,藉此,具備可製作即便製成厚膜時剝離或基板破壞亦少,具有良好磁特性之稀土類薄膜磁鐵的優異效果。
圖1係表示本發明之Nd-Fe-B稀土類薄膜磁鐵一例之剖面示意圖。
圖2係表示實施例1~9、比較例1~4之Si基板表面之熱氧化膜深度方向的Si2P及O1S之光譜強度之圖。
圖3係表示實施例8之稀土類薄膜磁鐵之界面的TEM觀察照片之圖。
圖4係表示實施例8之稀土類薄膜磁鐵之磁特性之圖。
圖5係表示Si基板表面之自然氧化膜深度方向的Si2P及O1S之光譜強度之圖。
本發明係一種稀土類薄膜磁鐵,以Nd、Fe、B為必要成分,其特徵在於:於在表面存在氧化膜之Si基板上具備Nd基底膜(緩衝層)作為第1層,於前述第1層上具備Nd-Fe-B膜(功能層)作為第2層。本發明之稀土類薄膜磁鐵藉由具備Nd基底膜,而具有可緩和Si基板與Nd-Fe-B膜間之線膨脹率差,從而可抑制膜之剝離或基板之破壞的優異效果。
於本發明之稀土類薄膜磁鐵中,前述第2層之Nd-Fe-B
膜較佳設為相當於化學計量組成附近之組成範圍之0.120≦Nd/(Nd+Fe)<0.150(原子數比)。於較大地偏離化學計量組成(Nd2Fe14B1)之情形時,變得難以獲得想要之磁特性。又,如習知般,於為了形成Nd緩衝層而超過前述範圍成為富含Nd之情形時,存在保磁力雖大,但飽和磁化(剩餘磁化)變小之情況。
又,本發明之稀土類磁鐵薄膜較佳使Nd基底膜(緩衝層)之膜厚為0.2μm以上且5.0μm以下。於Nd基底膜之膜厚未達0.2μm之情形時,存在Nd膜無法均勻地覆蓋Si基板之表面整體,從而剝離等之抑制效果降低之情況。另一方面,Nd基底膜之膜厚若超過5.0μm,則因密接性劣化而欠佳。密接性降低之原因,認為是起因於Fe自Nd-Fe-B層向Si基板之擴散不充分,從而難以於Si基板-Nd層之中間形成具備密接性之Fe-Si-O層。再者,雖於形成Nd基底膜時,存在Nd之一部分自然氧化之情況,但本發明亦包含該種情況。
於本發明之稀土類薄膜磁鐵,較佳使Nd-Fe-B膜(功能層)之膜厚為5μm以上50μm以下。Nd-Fe-B膜之膜厚若未達5μm,則存在無法獲得充分之磁特性的情況,另一方面,於Nd-Fe-B膜之膜厚較厚超過50μm之情形時,即便存在Nd基底膜,Nd-Fe-B膜厚度相對於由Fe-Si-O構成之密接層之厚度的比率亦會變得過大,因機械強度之關係,存在無法完全抑制剝離或基板之破壞之情況。順帶一提,於無Nd基底層下將化學計量組成附近之Nd-Fe-B膜成膜之情形時,於未破壞下所得之最大膜厚為10μm左右,但於本發明中,即便為化學計量組成附近之組成範圍之稀土類薄膜磁鐵,亦可將厚膜達成至50μm左右,此點值得稱
道。
再者,存在如下情況:於形成有氧化膜之Si基板上,隔著Nd基底膜形成之Nd-Fe-B膜因用以結晶化之熱處理,存在於該膜中之Fe之一部分擴散至Nd基底膜,進而與為Si基板表面之氧化膜之Si與O反應,形成由Fe-Si-O構成之數十nm左右之層。認為該情況如上述有助於提高密接性。本發明容許此種製造之過程中所形成之層之存在。
又,於本發明之稀土類薄膜磁鐵,形成於矽基板上之氧化膜,自與Nd基底膜之密接性的觀點而言,較佳為熱氧化膜。為自然氧化膜之情形時,於Si與稀土類薄膜之界面會發生剝離,但為熱氧化膜之情形時,根據Si基板本身破壞之實驗結果,認為Nd基底層相較於自然氧化膜,與熱氧化膜之密接性較好。又,熱氧化膜相較於自然氧化膜,其膜厚之控制較容易故亦較佳。再者,熱氧化膜之厚度為380~600nm,較佳為500~550nm,區別於一般之Si基板上之自然氧化膜的厚度即數nm(例如,1~3nm左右)。作為參考,於圖5表示自然氧化膜之深度方向的XPS光譜。
本發明之稀土類薄膜磁鐵具有優異磁特性,尤其具備下述優異之磁特性:可達成剩餘磁化為0.55T以上、保磁力為210kA/m以上,並且可達成最大能量乘積(BH)max為36kJ/m3以上。本發明在下述方面是優異的:即便於製成厚膜之情形時,亦不發生膜與基板之剝離,從而可維持此種良好之磁特性。
本發明之稀土類薄膜磁鐵例如可以下述方式製作。
首先,準備形成有熱氧化膜之Si基板。繼而,將此Si基板設置於脈衝雷射沈積裝置內,並且以與基板對向之方式設置Nd靶及Nd2Fe14B1靶。繼而,
將腔室內排氣至真空度成為(2~8)×10-5Pa為止之後,首先,通過聚光透鏡對Nd靶照射雷射,形成Nd基底膜。
雷射可使用Nd:YAG雷射(振盪波長:355nm,重複頻率:30Hz)。此時,雷射之強度密度較佳設為0.1~100J/cm2。若雷射強度密度未達0.1J/cm2,則存在雷射照射至靶時產生大量微滴,導致密度降低,甚至產生磁特性之劣化的情況。另一方面,若超過100J/cm2,則有時因照射雷射所造成之靶的蝕刻顯著,產生剝蝕現象停止等欠佳之現象。
繼而,於真空中切換為Nd2Fe14B1靶,形成Nd-Fe-B膜。此時,雷射之強度密度較佳與上述相同地,設為0.1~100J/cm2。其原因在於:若雷射強度密度未達0.1J/cm2,則有時會於雷射照射至靶時,產生大量微滴,從而密度降低,另一方面,若超過100J/cm2,則產生剝蝕現象停止等現象。
以上述方式照射過雷射之靶表面,發生化學反應與熔融反應,產生稱為蕈狀團之電漿。可藉由該蕈狀團到達對向之基板上,而形成Nd-Fe-B薄膜(非晶質)。繼而,為使以此方式形成之Nd-Fe-B之非晶質膜結晶化,而於成膜後以額定輸出約8kW、最大輸出之保持時間約3秒之條件實施脈衝熱處理,使Nd-Fe-B非晶質相結晶化。
此處,若未充分實施熱處理,則有時膜中之Nd-Fe-B非晶質相之結晶化會不充分,而殘留大量非晶質相,另一方面,過度之熱處理有時會使Nd2Fe14B1晶粒粗大化,磁特性劣化。因此,脈衝熱處理之條件較佳於上述範圍內進行,再者,脈衝熱處理可藉由以極短時間照射紅外線而促使試樣瞬間的結晶化,實現晶粒之微細化。
然而,於形成有熱氧化膜之Si基板上直接形成Nd-Fe-B膜之情形時,於然後之熱處理,因膜與基板之線膨脹率差造成之應變而不產生膜之剝離,但產生基板之破壞。於多數實驗,當進行熱處理後之冷卻時,確認到產生基板之破壞,收縮時之應力被認為是其原因之一。另一方面,雖認為應力亦因升溫時之線膨脹率之差而作用,但認為因剛成膜後之試樣為非晶質結構,藉由熱處理進行之結晶化使試樣收縮,故而應力之影響小,然後結晶化之試樣收縮時作用之力之影響較大。即,認為降溫時作用之應力的影響大於升溫時。
然後,例如可藉由以磁場7 T對此結晶化薄膜實施脈衝磁化,而製作稀土類薄膜磁鐵。再者,於本發明,磁化之方法並無特別限制,可使用公知之磁化方法。藉此,可製造Nd-Fe-B稀土類薄膜磁鐵。此稀土類薄膜磁鐵不僅具有優異之磁特性,而且由於直接被成膜於具通用性之Si基板上,故而對MEMS用之微磁元件等微致動器等之製作有用。
以下,基於實施例及比較例進行說明。再者,本實施例終究僅為一例,本發明並不受到該等例任何限制。即,本發明僅受到申請專利範圍限制,包含本發明所含之實施例以外的各種變形。
(實施例1)
準備純度99.9%,相對密度99%之Nd2.0Fe14B靶與純度99.9%,相對密度99%之Nd靶,基板使用厚度622μm且5mm見方之表面經熱氧化處理之單晶Si(100)。此處,熱氧化膜係藉由在氧環境中將Si基板以800℃之溫度進行加熱而形成。氧化膜之厚度係藉由使用ULVAC-PHI股份有限公司製
造之PHI5000 Versa Probe Ⅱ之裝置,以離子種Ar+、加速電壓3kV、以SiO2換算為9.5nm/min之速率自表面進行濺鍍,於深度方向對Si2P及O1S之各光譜的波峰強度進行分析而求得。將此結果示於圖2。根據此圖,判斷熱氧化膜之膜厚約為515nm。
繼而,將此等安裝於脈衝雷射沈積裝置之特定位置後,將腔室內排氣至真空,確認達到10-5Pa之真空度後,對以約11rpm旋轉之靶照射重複頻率30Hz之Nd:YAG雷射(振盪波長:355nm),將靶物質剝蝕而成膜於基板上。此時,將靶與基板之距離設為10mm,將靶表面之雷射強度密度設為4J/cm2左右。以此方式,於形成有熱氧化膜之Si基板上,形成Nd膜0.21μm,於該Nd膜上連續地形成以原子數比計為Nd/(Nd+Fe)=0.120之Nd-Fe-B非晶質膜18.6μm。
繼而,以額定輸出8kW、最大輸出之保持時間約3秒進行脈衝熱處理,使Nd-Fe-B系非晶質相結晶化。然後,以磁場7 T實施脈衝磁化,製作稀土類薄膜磁鐵。為了檢查Nd-Fe-B膜之剝離性,而以藉由切晶將5×5mm見方之試樣四等分地分割為2.5×2.5mm之方式進行切削加工,但確認到可在不造成機械性破損下進行加工。繼而,對於切晶後之試樣,進行藉由VSM(Vibrating Sample Magnetometer,振動試樣磁力計)之磁特性測定。其結果如表1所示,剩餘磁化為1.18T,保磁力為260kA/m,(BH)max為76kJ/m3,獲得良好的磁特性。又,使用測微計評價膜厚,使用EDX(Energy Dispersive X-ray spectroscopy,能量色散X射線光譜儀)進行膜之組成分析。將其結果示於表1。
(實施例2~10)
實施例2~10係以與實施例1同樣之條件,於形成有熱氧化膜之Si基板上形成Nd基底膜後,將組成滿足以原子數比計為0.120≦Nd/(Nd+Fe)<0.150之條件式的Nd-Fe-B膜成膜,然後,實施脈衝熱處理製成結晶化膜。此時,於實施例,分別改變Nd基底膜及Nd-Fe-B膜之膜厚。
繼而,對各個薄膜實施脈衝磁化,製作稀土類薄膜磁鐵。對於所獲得之稀土類薄膜磁鐵,與實施例1同樣地,檢查膜之剝離或磁特性等。將其結果示於表1。如表1所示,實施例2~10均無膜剝離或基板內破壞,顯示出良好的磁特性。
僅供參考,將實施例8之稀土類薄膜磁鐵之界面TEM照片示於圖3,將B-H特性示於圖4。如圖3所示,Fe-Si-O層被形成於Si基板與Nd基底膜之間(Si基板與熱氧化膜之界面附近、熱氧化膜中、熱氧化膜與Nd基底膜之界面附近)。此認為其原因在於Fe因脈衝熱處理而自Nd-Fe-B膜經由Nd基底膜向Si基板側擴散,而認為有助於提升Si基板與積層膜之密接性。
(比較例1)
比較例1係於與實施例1同樣之條件下,於形成有熱氧化膜之Si基板不形成Nd基底膜,而形成厚度18.2μm且以原子數比計為Nd/(Nd+Fe)=0.125之Nd-Fe-B膜,然後,實施脈衝熱處理製成結晶化膜。繼而,對此薄膜實施脈衝磁化,製作稀土類薄膜磁鐵。對於以此方式獲得之稀土類薄膜磁鐵,利用與實施例1同樣之方法,以藉由切晶將5×5mm見方之試樣四等分地分割為2.5×2.5mm之方式進行切削加工,但膜剝離,未能檢查到磁特性。
(比較例2)
比較例2係於與實施例1同樣之條件下,於形成有熱氧化膜之Si基板上形成膜厚0.5μm之Nd基底膜後,形成厚度13.5μm且以原子數比計為Nd/(Nd+Fe)=0.118且Nd組成少於化學計量組成之(Nd-低含量)之Nd-Fe-B膜,然後,實施脈衝熱處理,製成結晶化膜。繼而,對此薄膜實施脈衝磁化,製作稀土類薄膜磁鐵。對於以此方式獲得之稀土類薄膜磁鐵,與實施例1同樣地,檢查磁特性等。其結果,確認到保磁力、剩餘磁化、(BH)max分別為210kA/m、0.10T、15kJ/m3,磁特性顯著地降低。再者,以藉由切晶將5×5mm見方之試樣四等分地分割為2.5×2.5mm之方式進行切削加工,但未確認膜之剝離或基板內破壞。
(比較例3)
比較例3係於與實施例1同樣之條件下,於形成有熱氧化膜之Si基板上形成膜厚5.1μm之Nd基底膜後,形成厚度13.2μm且以原子數比計為Nd/(Nd+Fe)=0.123之Nd-Fe-B膜,然後,實施脈衝熱處理,製成結晶化膜。繼而,對此薄膜實施脈衝磁化,製作稀土類薄膜磁鐵。對於以此方式獲得之稀土類薄膜磁鐵,利用與實施例1同樣之方法,以藉由切晶將5×5mm見方之試樣四等分地分割為2.5×2.5mm之方式進行切削加工,但膜之一部分剝離,未能檢查到磁特性。
再者,於以如比較例3般較厚地堆積Nd基底膜之情形時,Fe因脈衝熱處理而自Nd-Fe-B膜向Si基板側之擴散變得不充分,於Si基板與Nd基底膜之間未能充分地形成由Fe-Si-O構成之密接層,故認為於膜之一部分中產生剝離。
(比較例4)
比較例4係於與實施例1同樣之條件下,於形成有熱氧化膜之Si基板上形成膜厚1.1μm之Nd基底膜後,形成厚度52.0μm且以原子數比計為Nd/(Nd+Fe)=0.135之Nd-Fe-B膜成膜,然後,實施脈衝熱處理,製成結晶化膜。繼而,對此薄膜實施脈衝磁化,製作稀土類薄膜磁鐵。對於以此方式獲得之稀土類薄膜磁鐵,利用與實施例1同樣之方法,以藉由切晶將5×5mm見方之試樣四等分地分割為2.5×2.5mm之方式進行切削加工,但膜之一部分剝離,未能檢查到磁特性。
再者,於如比較例4般Nd-Fe-B膜之膜厚厚超過50μm之情形時,即便存在Nd基底膜,相對於上述由Fe-Si-O構成之密接層之厚度,Nd-Fe-B膜之厚度之比率亦變得過大,根據機械強度之關係,認為無法完全地抑制剝離或基板之破壞。
本發明係一種稀土類薄膜磁鐵,具有不存在膜剝離或基板內破壞、具備良好磁特性之優異效果,該稀土類薄膜磁鐵於使表面氧化所得之Si基板上形成有Nd基底膜,於該Nd基底膜上形成有組成滿足以原子數比計為0.120≦Nd/(Nd+Fe)<0.150之條件式的Nd-Fe-B膜。本發明之Nd-Fe-B稀土類薄膜磁鐵適用作為應用於能量採集(環境發電)等能量領域或醫療機器領域等之磁元件用。又,尤其,適合用以製作MEMS用之微磁元件等微致動器等。
Claims (10)
- 一種稀土類薄膜磁鐵,以Nd、Fe、B為必要成分,其特徵在於:於在表面存在氧化膜之Si基板上具備Nd基底膜作為第1層,於該第1層上具備Nd-Fe-B膜作為第2層,且該第1層之膜厚為0.2μm以上5.0μm以下。
- 如申請專利範圍第1項之稀土類薄膜磁鐵,其中,該第2層之Nd-Fe-B之組成(原子數比)滿足0.120≦Nd/(Nd+Fe)<0.150之條件式。
- 如申請專利範圍第1或2項之稀土類薄膜磁鐵,其中,該第2層之膜厚為5μm以上50μm以下。
- 如申請專利範圍第1或2項之稀土類薄膜磁鐵,其中,該氧化膜為熱氧化膜。
- 如申請專利範圍第1或2項之稀土類薄膜磁鐵,其中,於該Si基板與該Nd基底膜之間具備由Fe-Si-O構成之層。
- 如申請專利範圍第1或2項之稀土類薄膜磁鐵,其中,剩餘磁化為0.55T以上。
- 如申請專利範圍第1或2項之稀土類薄膜磁鐵,其中,保磁力為210kA/m以上。
- 如申請專利範圍第1或2項之稀土類薄膜磁鐵,其中,最大能量乘積(BH)max為36kJ/m3以上。
- 一種稀土類薄膜磁鐵之製造方法,其係申請專利範圍第1至8項中任一項之稀土類薄膜磁鐵之製造方法,且其於Si基板上形成氧化膜,繼而,藉由脈衝雷射沈積法,於該Si基板上形成Nd基底膜之第1層後, 形成Nd-Fe-B膜之第2層,然後進行熱處理。
- 如申請專利範圍第9項之稀土類薄膜磁鐵之製造方法,其中,該熱處理係於500℃以上800℃以下進行。
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